Data Sheet
NP109N04PUK
R07DS0544EJ0200
Rev. 2.00
May 24, 2018
MOS FIELD EFFECT TRANSISTOR
Description
NP109N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 1.75 m MAX. ( VGS = 10 V, ID = 55 A )
・ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V )
・ Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP109N04PUK-E1-AY
NP109N04PUK-E2-AY
*1
Lead Plating
Pure Sn (Tin)
Tape 800 p/reel
*1
Packing
Taping (E1 type)
Taping (E2 type)
Package
TO-263(MP-25ZP)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA=25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25 °C)
Drain Current (pulse) *1, 3
Total Power Dissipation (TC = 25 °C)
Total Power Dissipation (TA = 25 °C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current *2, 3
Repetitive Avalanche Energy *2, 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±110
±440
250
1.8
175
-55 to 175
56
313
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C) *3
Rth(ch-A) *3
0.60
83.3
°C/W
°C/W
Notes *1. TC = 25°C, PW ≤ 10 μ s, Duty Cycle ≤ 1%
*2. RG = 25 Ω, VGS = 20 → 0 V
*3. Not subject of production test. Verified by design/characterization.
R07DS0544EJ0200 Rev.2.00
May 24, 2018
Page 1 of 6
NP109N04PUK
Electrical Characteristics (TA=25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero Gate Voltage Drain Current
IDSS
1
A
VDS = 40 V, VGS = 0 V
Gate Leakage Current
IGSS
±100
nA
VGS = 20 V, VDS = 0 V
Gate to Source Threshold Voltage
VGS(th)
2.0
3.0
Forward Transfer Admittance *1
| yfs |
50
100
4.0
V
VDS = VGS, ID = 250 A
S
VDS = 5 V, ID = 55 A
RDS(on)
1.40
1.75
m
VGS = 10 V, ID = 55 A
Input Capacitance *2
Ciss
7200
10800
pF
VDS = 25 V
Output Capacitance *2
Coss
1040
1560
pF
VGS = 0 V
Drain to Source On-state
Resistance
*1
Reverse Transfer Capacitance *2
Crss
390
710
pF
f = 1 MHz
Turn-on Delay Time *2
td(on)
30
70
ns
VDD = 20 V, ID = 55 A
tr
16
40
ns
VGS = 10 V
td(off)
105
210
ns
RG = 0
tf
13
40
ns
Total Gate Charge *2
QG
126
189
nC
VDD = 32 V
Gate to Source Charge
QGS
32
nC
VGS = 10 V
Gate to Drain Charge
QGD
31
nC
ID = 110 A
Rise Time *2
Turn-off Delay Time *2
Fall Time *2
Body Diode Forward Voltage
*1
VF(S-D)
0.9
Reverse Recovery Time
trr
62
1.5
ns
V
IF = 110 A, VGS = 0 V
IF = 110 A, VGS = 0 V
Reverse Recovery Charge
Qrr
110
nC
di/dt = 100 A/s
Note. *1 Pulse test
Note. *2 Not subject of production test. Verified by design/characterization.
R07DS0544EJ0200 Rev.2.00
May 24, 2018
Page 2 of 6
NP109N04PUK
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
100
Pt – Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
80
60
40
20
0
0
50
100
150
200
TC - Case Temperature - C
TC - Case Temperature - C
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage – V
Rth(t) - Transient Thermal Resistance - C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
0.1 m
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0544EJ0200 Rev.2.00
May 24, 2018
Page 3 of 6
NP109N04PUK
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
FORWARD TRANSFER ADMITTANCE vs.
CHANNEL TEMPERATURE
CURRENT
ID - Drain Current - A
Tch - Channel Temperature - C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
ID - Drain Current - A
R07DS0544EJ0200 Rev.2.00
May 24, 2018
RDS(on) - Drain to Source On-state Resistance - m
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - m
DRAIN
| yfs | - Forward Transfer Admittance - S
VGS(th) – Gate to Source Threshold Voltage - V
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
Page 4 of 6
NP109N04PUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
td(on),tr,td(off),tr – Switching Time - ns
SWITCHING CHARACTERISTICS
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
CHANNEL TEMPERATURE
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
IF - Diode Forward Current - A
trr – Reverse Recovery Time - ns
DRAIN CURRENT
VF(S-D) - Source to Drain Voltage - V
R07DS0544EJ0200 Rev.2.00
May 24, 2018
IF - Drain Current - A
Page 5 of 6
NP109N04PUK
Package Dimensions
MASS (Typ.)
TO-263 (MP-25ZP)
1.5 g
Unit : mm
No plating
10.0 ±0.3
7.88 MIN.
1.35 ±0.3
Package Name
4.45 ±0.2
1.3 ±0.2
9.15 ±0.3
0.5
0.025
to 0.25
15.25 ±0.5
8.0 TYP.
4
.2
0 to 8
°
0.25
1 2
3
2.5
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.54 ±0.25
0.6 ±0
0.75 ±0.2
Drain
Body
Diode
Gate
Source
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0544EJ0200 Rev.2.00
May 24, 2018
Page 6 of 6
Revision History
Rev.
0.01
2.00
Date
Apr 26, 2010
May 24 ,2018
NP180N04TUK Preliminary Datasheet
Page
1
2
Description
Summary
1st edition
Note 3 was added
Note 2 was added
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