NP110N055PUK-E1-AY

Preliminary Data Sheet NP110N055PUK R07DS0591EJ0200 Rev.2.00 May 24, 2018 MOS FIELD EFFECT TRANSISTOR Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP110N055PUK-E1-AY *1 NP110N055PUK-E2-AY *1 Note: Lead Plating Pure Sn (Tin) Tape 800 p/reel Packing Taping (E1 type) Taping (E2 type) Package TO-263 (MP-25ZP) *1 Pb-free (This product does not contain Pb in the external electrode) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 55 20 110 440 348 1.8 175 –55 to 175 66 435 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C)*3 Rth(ch-A) *3 0.43 83.3 °C/W °C/W Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20  0 V *3 Not subject of production test. Verified by design/characterization. R07DS0591EJ0200 Rev.2.00 May 24, 2018 Page 1 of 6 NP110N055PUK Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance *2 Output Capacitance *2 Reverse Transfer Capacitance *2 Turn-on Delay Time *2 Rise Time *2 Turn-off Delay Time *2 Fall Time *2 Total Gate Charge *2 Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. — — 2.0 60 — — — — — — — — — — — — — — TYP. — — 3.0 120 1.45 10700 1200 380 38 19 140 14 196 51 45 0.9 83 145 MAX. 1 100 4.0 — 1.75 16050 1800 690 90 50 280 40 294 — — 1.5 — — Unit A nA V S m pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = 55 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 55 A VGS = 10 V, ID = 55 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 28 V, ID = 55 A VGS = 10 V RG = 0  VDD = 44 V VGS = 10 V ID = 110 A IF = 110 A, VGS = 0 V IF = 110 A, VGS = 0 V di/dt = 100 A/s Note: *1 Pulsed test Note: *2 Not subject of production test. Verified by design/characterization. TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω RL Wave Form RG PG. VDD VGS VGS VDD 0 VGS 10% 90% VDS 90% ID IAS 90% VDS VGS 0 BVDSS VDS 10% 0 10% Wave Form VDS VDD Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS0591EJ0200 Rev.2.00 May 24, 2018 Page 2 of 6 NP110N055PUK Typical Characteristics (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 400 PT - Total Power Disslpation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 25 50 75 100 125 150 350 300 250 200 150 100 50 0 175 0 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(Pulse) = 440 A PW RDS(ON) Limited =1 00 (VGS=10 V) μs ID(DC) = 110 A PW =1 Power Dissipation Limited ms PW 10 s 0m =1 Secondary Breakdown Limited DC ID - Drain Current - A 1000 1 TC = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 83.3°C/W 100 10 1 Rth(ch-C) = 0.43°C/W 0.1 Single pulse 0.01 0.1 m 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0591EJ0200 Rev.2.00 May 24, 2018 Page 3 of 6 NP110N055PUK DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 100 ID - Drain Curent - A 400 300 200 100 RDS(on) - Drain to Source On-State Resistance - mΩ 0 0.2 0.4 0.6 1 0.1 0.001 0.8 VDS = 10 V Pulsed 0 1 2 3 4 5 6 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 |yfs| - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V 0 TA = –55°C 25°C 85°C 150°C 175°C 10 0.01 VGS = 10 V Pulsed 3 2 1 VDS = VGS ID = 250 μA 0 –100 –50 0 50 100 150 200 1000 TA = –55°C 25°C 85°C 150°C 175°C 100 10 VDS = 5 V Pulsed 1 1 10 100 1000 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 4 3 2 1 VGS = 10 V Pulsed 0 1 10 100 ID - Drain Current - A R07DS0591EJ0200 Rev.2.00 May 24, 2018 1000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 500 4 3 2 1 ID = 55 A Pulsed 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 3 2 1 VGS = 10 V ID = 55 A Pulsed 0 –100 –50 0 50 100 150 Ciss 1000 Coss Crss VGS = 0 V f = 1 MHz 100 0.1 200 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10000 11 55 1000 td(off) 100 td(on) tr tf 10 VDD = 28 V VGS = 10 V RG = 0 Ω 1 0.1 1 10 100 50 1000 10 VDD = 44 V 28 V 11 V 45 9 40 8 35 7 30 5 20 4 15 3 2 10 5 VDS 0 ID = 110 A 1 0 20 40 60 80 100 120 140 160 180 200 ID - Drain Current - A QG- Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 100 VGS = 0 V 10 1 Pulsed 0 0.2 0.4 0.6 0.8 1.0 VF(S-D) - Source to Drain Voltage - V R07DS0591EJ0200 Rev.2.00 May 24, 2018 1.2 trr - Reverse Recovery Time - ns VGS = 10 V 0.1 6 VGS 25 0 1000 IF - Diode Forward Current - A 10000 VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance -pF 100000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-State Resistance - mΩ NP110N055PUK 100 di/dt = 100 A/μs VGS = 0 V 10 0.1 1 10 100 1000 IF - Drain Current - A Page 5 of 6 NP110N055PUK Package Drawing (Unit: mm) No plating 10.0 ±0.3 7.88 MIN. 1.35 ±0.3 TO-263 (MP-25ZP) (Mass: 1.5 g TYP.) 4.45 ±0.2 1.3 ±0.2 9.15 ±0.3 0.5 0.025 to 0.25 15.25 ±0.5 8.0 TYP. 4 0.75 ±0.2 .2 0 to 8 ° 0.25 1 2 3 2.5 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.54 ±0.25 0.6 ±0 Equivalent Circuit Drain Body Diode Gate Source Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0591EJ0200 Rev.2.00 May 24, 2018 Page 6 of 6 Revision History Rev. 1.00 2.00 Date Dec 12, 2011 May 24 ,2018 NP110N055PUK Data Sheet Page — 1 2 Description Summary First Edition Issued Note 3 was added Note 2 was added All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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