NP35N055YUK-E1-AY

Preliminary Data Sheet NP35N055YUK R07DS1002EJ0200 Rev.2.00 May 24, 2018 55 V – 35 A – N-channel Power MOS FET Application: Automotive Description The NP35N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 6.7 m MAX. (VGS = 10 V, ID = 18 A)  Non logic level drive type  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP35N055YUK-E1-AY *1 NP35N055YUK-E2-AY *1 Note: Lead Plating Pure Sn (Tin) Tape 2500 p/reel Packing Taping (E1 type) Taping (E2 type) Package 8-pin HSON *1 Pb-free (This product does not contain Pb in the external electrode) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 4 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) *2 Channel Temperature Storage Temperature Repetitive Avalanche Current *3, 4 Repetitive Avalanche Energy *3, 4 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 55 20 35 140 97 1.0 175 –55 to +175 24 58 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Notes: *1 *2 *3 *4. Rth(ch-C)*4 Rth(ch-A) *4 1.55 150 °C/W °C/W TC = 25°C, PW  10 s, Duty Cycle  1% Mounted on glass epoxy substrate of 40 mm  40 mm  1.6 mmt with 4% Copper area (35 m) RG = 25 , VGS = 20 V  0 V Not subject of production test. Verified by design/characterization. R07DS1002EJ0200 Rev.2.00 May 24, 2018 Page 1 of 6 NP35N055YUK Preliminary Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance *2 Output Capacitance *2 Reverse Transfer Capacitance *2 Turn-on Delay Time *2 Rise Time *2 Turn-off Delay Time *2 Fall Time *2 Total Gate Charge *2 Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. — — 2.0 18 — — — — — — — — — — — — — — TYP. — — 3.0 36 5.3 2240 230 95 19 9 47 4 38 10 10 0.9 35 41 MAX. 1 100 4.0 — 6.7 3360 350 180 38 22 94 10 57 — — 1.5 — — Unit A nA V S m pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = 55 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 18 A VGS = 10 V, ID = 18 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 28 V, ID = 18 A VGS = 10 V RG = 0  VDD = 44 V VGS = 10 V ID = 35 A IF = 35 A, VGS = 0 V IF = 35 A, VGS = 0 V di/dt = 100 A/s Note: *1 Pulsed test Note: *2 Not subject of production test. Verified by design/characterization. TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω RL Wave Form RG PG. VDD VGS VGS VDD 0 VGS 10% 90% VDS 90% ID IAS 90% VDS VGS 0 BVDSS VDS 10% 0 10% Wave Form VDS VDD Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS1002EJ0200 Rev.2.00 May 24, 2018 Page 2 of 6 NP35N055YUK Preliminary Typical Characteristics (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 120 PT - Total Power Disslpation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 25 50 75 100 125 150 100 80 60 40 20 0 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID(Pulse) = 140 A RDS(ON) Limited 100 (V =10 V) GS PW = ID(DC) = 35 A 0 μs Power Dissipation Limited PW 10 10 =1 ms 1 Secondary Breakdown Limited =1 s 0m DC TC = 25°C Single Pulse 0.1 0.1 PW ID - Drain Current - A 1000 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 150°C/W 100 10 Rth(ch-C) = 1.55°C/W 1 0.1 Single pulse Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% copper area (35 μm) 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS1002EJ0200 Rev.2.00 May 24, 2018 Page 3 of 6 NP35N055YUK Preliminary DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 160 100 ID - Drain Curent - A 100 80 60 40 0.2 0.4 0.6 0.8 1.0 0.1 0.001 1.2 VDS = 10 V Pulsed 0 1 2 3 4 5 6 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 |yfs| - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 0 1 0.01 VGS = 10 V Pulsed 20 0 TA = –55°C 25°C 75°C 125°C 175°C 10 120 3 2 1 VDS = VGS ID = 250 μA 0 –100 –50 0 50 100 150 200 100 TA = –55°C 25°C 75°C 125°C 175°C 10 VDS = 5 V Pulsed 1 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 12 10 8 6 4 2 0 VGS = 10 V Pulsed 1 10 100 ID - Drain Current - A R07DS1002EJ0200 Rev.2.00 May 24, 2018 1000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 140 12 10 8 6 4 2 0 ID = 18 A Pulsed 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 Preliminary DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 12 10 8 6 4 VGS = 10 V ID = 18 A Pulsed 2 0 –100 –50 0 50 100 150 1000 Coss 100 Crss VGS = 0 V f = 1 MHz 10 0.1 200 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 50 VDD = 28 V VGS = 10 V RG = 0 Ω 100 td(off) td(on) 10 tr tf 1 0.1 1 10 10 45 9 VDD = 44 V 28 V 11 V 40 8 35 7 30 6 VGS 25 5 20 4 15 3 10 2 5 0 100 VDS 0 5 10 15 20 ID = 35 A 25 30 35 ID - Drain Current - A QG- Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT trr - Reverse Recovery Time - ns VGS = 10 V VGS = 0 V 100 10 1 Pulsed 0.1 1 0 40 100 1000 IF - Diode Forward Current - A Ciss VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance -pF 10000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-State Resistance - mΩ NP35N055YUK 0 0.2 0.4 0.6 0.8 1.0 VF(S-D) - Source to Drain Voltage - V R07DS1002EJ0200 Rev.2.00 May 24, 2018 1.2 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 1 10 100 IF - Drain Current - A Page 5 of 6 NP35N055YUK Preliminary Package Drawing (Unit: mm) 8-pin HSON (Mass: 0.128 g TYP.) 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain Equivalent Circuit Drain Body Diode Gate Source Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS1002EJ0200 Rev.2.00 May 24, 2018 Page 6 of 6 Revision History Rev. 1.00 2.00 Date Feb 08, 2013 May 24 ,2018 NP35N055YUK Data Sheet Page — 1 2 Description Summary First Edition Issued Note 4 was added Note 2 was added All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights, or other intellectual property rights of third parties, by or arising from the use of Renesas Electronics products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples. 3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any and all liability for any losses or damages incurred by 5. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The intended applications for each Renesas Electronics product depends on the you or third parties arising from such alteration, modification, copying or reverse engineering. product’s quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; industrial robots; etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale communication equipment; key financial terminal systems; safety control equipment; etc. Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not intended or authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). Renesas Electronics disclaims any and all liability for any damages or losses incurred by you or any third parties arising from the use of any Renesas Electronics product that is inconsistent with any Renesas Electronics data sheet, user’s manual or other Renesas Electronics document. 6. When using Renesas Electronics products, refer to the latest product information (data sheets, user’s manuals, application notes, “General Notes for Handling and Using Semiconductor Devices” in the reliability handbook, etc.), and ensure that usage conditions are within the ranges specified by Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation characteristics, installation, etc. Renesas Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electronics products outside of such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific characteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Unless designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics products, such as safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and impractical, you are responsible for evaluating the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. You are responsible for carefully and sufficiently investigating applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in compliance with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicable export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells or transfers the product to a third party, to notify such third party in advance of the contents and conditions set forth in this document. 11. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its directly or indirectly controlled subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. (Rev.4.0-1 November 2017) http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 1001 Murphy Ranch Road, Milpitas, CA 95035, U.S.A. Tel: +1-408-432-8888, Fax: +1-408-434-5351 Renesas Electronics Canada Limited 9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3 Tel: +1-905-237-2004 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. Room 1709 Quantum Plaza, No.27 ZhichunLu, Haidian District, Beijing, 100191 P. R. China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, 200333 P. R. China Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 Renesas Electronics Hong Kong Limited Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics India Pvt. Ltd. No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India Tel: +91-80-67208700, Fax: +91-80-67208777 Renesas Electronics Korea Co., Ltd. 17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea Tel: +82-2-558-3737, Fax: +82-2-558-5338 © 2018 Renesas Electronics Corporation. All rights reserved. Colophon 7.0