NP82N04NDG-S18-AY

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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04MDG, NP82N04NDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N04MDG-S18-AY NP82N04NDG-S18-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g Note Pb-free (This product does not contain Pb in the external electrode.) FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 6000 pF TYP. • Designed for automotive application and AEC-Q101 qualified (TO-220) (TO-262) V V A A W W °C °C A mJ ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Note1 Drain Current (pulse) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Note2 Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, RG = 25 Ω VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR 40 ±20 ±82 ±328 143 1.8 175 −55 to +175 43 185 THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.05 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19800EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan 2009 NP82N04MDG, NP82N04NDG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 5 V, ID = 41 A VGS = 10 V, ID = 41 A VGS = 4.5 V, ID = 41 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 41 A, VGS = 10 V, RG = 0 Ω MIN. TYP. MAX. 1 ±100 UNIT μA nA V S 1.4 20 65 3.4 5.4 6000 580 370 26 68 73 11 2.5 Drain to Source On-state Resistance 4.2 8.5 9000 870 670 60 170 150 30 150 mΩ mΩ pF pF pF ns ns ns ns nC nC nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 32 V, VGS = 10 V, ID = 82 A IF = 82 A, VGS = 0 V IF = 82 A, VGS = 0 V, di/dt = 100 A/μs 100 19 32 0.9 43 47 1.5 V ns nC Note Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RL VDD VGS VGS Wave Form 0 10% VGS 90% VDS 90% 90% 10% 10% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D19800EJ1V0DS NP82N04MDG, NP82N04NDG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 PT - Total Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - °C 1000 (o DS n) ID - Drain Current - A 100 R GS (V d it e Lim V ) 1i 0 = ID(Pulse) PW = 1i 0 0 μs ID(DC) w Po DC 1i m i 1i 0 s co Se m 10 D er i ss ip io at i s ary nd Br o ed ak wn d it e im nL 1 T C = 25 ° C Single Pulse d it e Lim 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W 10 Rth(ch-A) = 83.3°C/W 1 Rth(ch-C) = 1.05°C/W 0.1 Single Pulse 0.01 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D19800EJ1V0DS 3 NP82N04MDG, NP82N04NDG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 350 300 1000 100 FORWARD TRANSFER CHARACTERISTICS VDS = 10 V Pulsed TA = 85°C 125°C 150°C 175°C ID - Drain Current - A 250 200 150 100 50 ID - Drain Current - A 10 V 10 1 0.1 0.01 VGS = 4.5 V −55°C −25°C 25°C Pulsed 0 0 0.5 1 1.5 2 2.5 0.001 0 1 2 3 4 5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 TA = −55°C −25°C 25°C 75°C 125°C 2.5 2 1.5 1 0.5 0 -75 -25 25 75 100 10 150°C 175°C 1 VDS = 5 V Pulsed 0.1 0.1 1 10 100 1000 VDS = VGS ID = 250 μA 125 175 225 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 10 8 6 4 10 V 2 Pulsed 0 0.1 1 10 100 1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 30 Pulsed 20 VGS = 4.5 V ID = 8 2 A 41 A 16.4 A 10 0 0 4 8 12 16 20 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 Data Sheet D19800EJ1V0DS NP82N04MDG, NP82N04NDG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ 10 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF 8 6 4 2 0 -75 -25 VGS = 4.5 V Ciss 1000 Coss 10 V ID = 4 1 A Pulsed 25 75 125 175 225 Crss VGS = 0 V f = 1 MHz 100 0.1 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 50 10 VDD = 32 V 20 V 8V 8 6 VGS 4 2 ID = 8 2 A 60 80 0 100 td(on), tr, td(off), tf - Switching Time - ns VDS - Drain to Source Voltage - V 40 30 20 10 0 100 td(off) td(on) tr 10 VDD = 20 V VGS = 10 V RG = 0 Ω 1 0.1 1 10 tf VDS 100 0 20 40 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 4.5 V 10 1 0.1 Pulsed 0.01 0 0.5 1 1.5 10 0.1 VGS = 0 V 100 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 10 V di/dt = 100 A/μs VGS = 0 V 1 10 100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D19800EJ1V0DS 5 VGS - Gate to Source Voltage - V NP82N04MDG, NP82N04NDG PACKAGE DRAWINGS (Unit: mm) TO-220 (MP-25K) 10.0±0.2 2.8±0.3 TO-262 (MP-25SK) φ 3.8±0.2 1.2±0.3 4.45±0.2 1.3±0.2 10.0±0.2 4.45±0.2 1.3±0.2 10.1±0.3 15.9 MAX. 6.3±0.3 4 1 3.1±0.2 13.7±0.3 4 1 13.7±0.3 2 3 1.27±0.2 0.8±0.1 1.27±0.2 0.8±0.1 3.1±0.3 2 3 8.9±0.2 0.5±0.2 2.54 TYP. 2.54 TYP. 2.5±0.2 0.5±0.2 2.54 TYP. 2.54 TYP. 2.5±0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D19800EJ1V0DS NP82N04MDG, NP82N04NDG MARKING INFORMATION NEC 82N04 DG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Wave soldering NP82N04MDG, NP82N04NDG Partial heating NP82N04MDG, NP82N04NDG Soldering Conditions Maximum temperature (Solder temperature): 260°C or below Time: 10 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Recommended Condition Symbol THDWS P350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet D19800EJ1V0DS 7 NP82N04MDG, NP82N04NDG • T he information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E