NP83P06PDG-E1-AY

Datasheet NP83P06PDG -60V – -83A – P-channel Power MOS FET Application : Automotive R07DS1516EJ0100 Rev.1.00 Jun. 10, 2022 Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features     Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5 A ) Low input capacitance : Ciss = 10100 pF Typ. Designed for automotive application and AEC-Q101 qualified. Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 1 2 3 1. Gate 2. Drain 3. Source 4. Drain(Fin) MP-25ZP (TO-263) Gate Source Equivalent circuit Absolute Maximum Ratings (Ta=25°C) Item Drain to Source Voltage (VGS = 0 V) Symbol Ratings Unit -60 V VDSS Gate to Source Voltage (VDS = 0 V) VGSS 20 V Drain Current (DC) (Tc = 25 °C) ID(DC) 83 A Drain Current (pulse) ID(pulse) Notes1 249 A Total Power Dissipation (Tc = 25 °C) PT1 150 W Total Power Dissipation (Ta = 25 °C) PT2 1.8 W Channel Temperature Tch 175 °C Storage Temperature Tstg -55 to 175 °C Single Avalanche Current IAS Notes2 49 A 240 mJ Single Avalanche Energy EAS Notes2 Notes 1. PW  10 s , Duty Cycle  1% 2. Starting Tch=25℃ , VDD = -30V , RG = 25  , VGS = -20  0V , L = 100H R07DS1516EJ0100 Rev.1.00 Jun.10.2022 Page 1 of 7 NP83P06PDG Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-c) Notes3 Rth(ch-a) Notes3 1.0 83.3 °C/W °C/W Electrical Characteristics (Ta=25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Drain to Source On-state Resistance Symbol Min Typ Max Unit IDSS — — -10 A VDS = -60 V, VGS = 0 V Test Conditions VGS =  20 V, VDS = 0 V IGSS — — 100 nA VGS(th) -1.0 -1.6 -2.5 V VDS = -10 V, ID = -1 mA | yfs | Notes4 30 60 — S VDS = -10 V, ID = -41.5 A RDS(on)1 Notes4 — 6.9 8.8 m VGS = -10 V, ID = -41.5 A RDS(on)2 Notes4 — 8.0 12 m VGS = -4.5 V, ID = -41.5 A VDS = -10 V Input Capacitance Ciss — 10100 — pF Output Capacitance Coss — 1140 — pF VGS = 0 V Reverse Transfer Capacitance Crss — 660 — pF f = 1 MHz Turn-on Delay Time td(on) — 36 — ns VDD = -30 V tr — 20 — ns ID = -41.5 A td(off) — 230 — ns VGS = -10 V tf — 200 — ns RG = 0  Qg — 190 — nC VDD = -48 V Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Qgs — 20 — nC VGS = -10 V Gate to Drain Charge Qgd — 53 — nC ID = -83A VF(S-D) Notes4 — 0.94 1.5 V IF = -83 A, VGS = 0 V Body Diode Forward Voltage Reverse Recovery Time trr — 63 — ns IF = -83 A, VGS = 0 V Reverse Recovery Charge Qrr — 101 — nC di/dt = -100 A/s Notes 3. Designed target value on Renesas measurement condition. Not subject to production test. 4. Pulse test. R07DS1516EJ0100 Rev.1.00 Jun.10.2022 Page 2 of 7 NP83P06PDG Typical Characteristics R07DS1516EJ0100 Rev.1.00 Jun.10.2022 Page 3 of 7 NP83P06PDG R07DS1516EJ0100 Rev.1.00 Jun.10.2022 Page 4 of 7 NP83P06PDG R07DS1516EJ0100 Rev.1.00 Jun.10.2022 Page 5 of 7 NP83P06PDG Test Circuit Avalanche Test Circuit Waveform ID VDD RG D.U.T. V(BR)DSS IAS L VDS VDD VGS V(BR)DSS EAS = 1 ・L・IAS2・ V(BR)DSS - VDD 2 Switching Time Test Circuit Waveform 90% RL VGS RG D.U.T. VDD VDS 10% 90% 90% 10% VGS td(on) 10% td(off) tr tf Gate Charge Test Circuit Waveform VDS RL IG D.U.T. VDD VGS Qg VGS Qgs Qgd Reverse Recovery Test Circuit Waveform IF IF D.U.T. L RG trr 0 di/dt Qrr VDD VGS R07DS1516EJ0100 Rev.1.00 Jun.10.2022 Page 6 of 7 NP83P06PDG 1.35 ± 0.3 Package Dimensions 10.0 ± 0.3 7.88 Min. 4.45 ± 0.2 1.3 ± 0.2 Pin No. 1 2 3 15.25 ± 0.5 9.15 ± 0.3 8.0 4 0.025 to 0.25 0.25 0.6 ± 0.2 2.54 2.54 0 to 8º 2.54 ± 0.25 0.5 0.75 ± 0.2 2.5 Unit : mm Mass : 1.48g Ordering Information Part No. NP83P06PDG-E1-AY Remark Quantity 800pcs/reel Shipping container Taping Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS1516EJ0100 Rev.1.00 Jun.10.2022 Page 7 of 7 Notice 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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