NP89N055NUK-S18-AY

Preliminary Data Sheet NP89N055MUK, NP89N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0600EJ0200 Rev.2.00 May 24, 2018 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP89N055MUK-S18-AY *1 NP89N055NUK-S18-AY *1 Note: Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Package TO-220 (MP-25K) TO-262 (MP-25SK) *1 Pb-free (This product does not contain Pb in the external electrode) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 55 20 90 360 147 1.8 175 –55 to 175 33 108 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C)*3 Rth(ch-A) *3 1.02 83.3 °C/W °C/W Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20  0 V *3 Not subject of production test. Verified by design/characterization. R07DS0600EJ0200 Rev.2.00 May 24, 2018 Page 1 of 6 NP89N055MUK, NP89N055NUK Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance *2 Output Capacitance *2 Reverse Transfer Capacitance *2 Turn-on Delay Time *2 Rise Time *2 Turn-off Delay Time *2 Fall Time *2 Total Gate Charge *2 Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. — — 2.0 30 — — — — — — — — — — — — — — TYP. — — 3.0 60 3.65 4000 410 150 25 10 65 6 68 18 18 0.95 47 80 MAX. 1 100 4.0 — 4.40 6000 620 270 60 30 130 20 102 — — 1.5 — — Unit A nA V S m pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = 55 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 45 A VGS = 10 V, ID = 45 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 28 V, ID = 45 A VGS = 10 V RG = 0  VDD = 44 V VGS = 10 V ID = 90 A IF = 90 A, VGS = 0 V IF = 90 A, VGS = 0 V di/dt = 100 A/s Note: *1 Pulsed test Note: *2 Not subject of production test. Verified by design/characterization. TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω RL Wave Form RG PG. VDD VGS VGS VDD 0 VGS 10% 90% VDS 90% ID IAS 90% VDS VGS 0 BVDSS VDS 10% 0 10% Wave Form VDS VDD Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS0600EJ0200 Rev.2.00 May 24, 2018 Page 2 of 6 NP89N055MUK, NP89N055NUK Typical Characteristics (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 160 PT - Total Power Disslpation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 25 50 75 100 125 150 140 120 100 80 60 40 20 0 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID(Pulse) = 360 A RDS(ON) Limited PW =1 (V =10 V) 00 100 GS μs ID(DC) = 90 A PW =1 10 PW Power Dissipation Limited ms =1 0m 1 s Secondary Breakdown Limited DC ID - Drain Current - A 1000 0.1 TC = 25°C Single Pulse 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 83.3°C/W 100 10 Rth(ch-C) = 1.02°C/W 1 0.1 Single pulse 0.01 0.1 m 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0600EJ0200 Rev.2.00 May 24, 2018 Page 3 of 6 NP89N055MUK, NP89N055NUK DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 400 ID - Drain Curent - A 250 200 150 100 0.1 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS = 10 V Pulsed 0 1 2 3 4 5 6 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 |yfs| - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 1 0.01 VGS = 10 V Pulsed 50 0 TA = –55°C 25°C 85°C 150°C 175°C 10 300 3 2 1 VDS = VGS ID = 250 μA 0 –100 –50 0 50 100 150 200 100 TA = –55°C 25°C 85°C 150°C 175°C 10 VDS = 5 V Pulsed 1 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 8 7 6 5 4 3 2 VGS = 10 V Pulsed 1 0 1 10 100 ID - Drain Current - A R07DS0600EJ0200 Rev.2.00 May 24, 2018 1000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 350 8 7 6 5 4 3 2 ID = 45 A Pulsed 1 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 8 7 6 5 4 3 2 VGS = 10 V ID = 45 A Pulsed 1 0 –100 –50 0 50 100 150 1000 Coss VGS = 0 V f = 1 MHz 100 0.1 200 Crss 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 11 55 1000 100 td(off) td(on) tr 10 VDD = 28 V VGS = 10 V RG = 0 Ω 1 0.1 tf 1 10 100 10 50 45 9 VDD = 44 V 28 V 11 V 40 8 35 7 30 6 5 25 VGS 20 4 3 15 10 2 VDS ID = 90 A 5 0 0 10 20 30 40 50 60 ID - Drain Current - A QG- Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT VGS = 0 V 100 10 1 Pulsed 0 0.2 0.4 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V R07DS0600EJ0200 Rev.2.00 May 24, 2018 1.4 trr - Reverse Recovery Time - ns VGS = 10 V 0.1 1 0 70 100 1000 IF - Diode Forward Current - A Ciss VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance -pF 10000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-State Resistance - mΩ NP89N055MUK, NP89N055NUK 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 1 10 100 IF - Drain Current - A Page 5 of 6 NP89N055MUK, NP89N055NUK Package Drawing (Unit: mm) TO-220 (MP-25K) (Mass: 1.9 g TYP.) 3 0.8±0.1 2.54 TYP. 2.54 TYP. 1.27±0.2 3.1±0.2 2 13.7±0.3 1 6.3±0.3 4 4.45±0.2 1.3±0.2 15.9 MAX. 3.8±0.2 2.8±0.3 10.0±0.2 0.5±0.2 2.5±0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) 3 10.1±0.3 2 13.7±0.3 1 4.45±0.2 1.3±0.2 0.8±0.1 2.54 TYP. 2.54 TYP. 1.27±0.2 3.1±0.3 4 8.9±0.2 10.0±0.2 1.2±0.3 TO-262 (MP-25SK) (Mass: 1.8 g TYP.) 0.5±0.2 2.5±0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) Equivalent Circuit Drain Body Diode Gate Source Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0600EJ0200 Rev.2.00 May 24, 2018 Page 6 of 6 Revision History Rev. 1.00 2.00 Date Jan 11, 2012 May 24 ,2018 NP89N055MUK, NP89N055NUK Data Sheet Page — 1 2 Description Summary First Edition Issued Note 3 was added Note 2 was added All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. 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