Data Sheet
PS2535-1, PS2535L-1
R08DS0199EJ0101
Rev.1.01
Nov 4, 2022
HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE
DESCRIPTION
The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an
NPN silicon Darlington-connected phototransistor. High isolation voltage between the I/O, the high voltage
between the collector and emitter of the transistor, and Darlington transistor output enables low-current input.
The PS2535-1 is a plastic DIP (Dual In-line Package) model for the pin Insertion mounting and the PS2535L1 is a Gull-wing lead bending model modified from the PS2535-1 for the surface mounting.
FEATURES
•
•
•
•
•
•
High collector to emitter voltage (VCEO = 350 V)
High isolation voltage (BV = 5 000 Vr.m.s.)
High current transfer ratio (CTR = 1 500 % TYP.)
Embossed tape product: PS2535L-1-F3: 2 000 pcs/reel
Pb-free product
Safety standards
•
UL approved: UL1577, Double protection
•
BSI approved: BS EN 62368-1, Reinforced insulation
•
VDE approved: DIN EN 60747-5-5 (Option)
PIN CONNECTION
(Top View)
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
APPLICATIONS
• Telephone, Exchange equipment
• FAX/MODEM
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 1 of 14
PS2535-1, PS2535L-1
PACKAGE DIMENSIONS (UNIT: mm)
DIP Type
PS2535-1
4.6±0.35
6.5±0.5
4 3
1 2
3.5±0.3
3.2±0.4 4.15±0.4
7.62
0 to 15° +0.1
0.25 –0.05
1.25±0.15
0.50±0.10
0.25 M
2.54
Lead Bending Type For Surface Mount
PS2535L-1
4.6±0.35
3
1
2
+0.1
0.1 –0.05
3.5±0.3
+0.1
0.25 –0.05
6.5±0.5
4
0.9±0.25
9.60±0.4
1.25±0.15
0.25 M
2.54
0.15
Weight ( 4-pin DIP)：0.26 g (TYP.)
PHOTOCOUPLER CONSTRUCTION
Parameter
PS2535-1, PS2535L-1
Air Distance (MIN.)
7 mm
Creepage Distance (MIN.)
7 mm
Isolation Distance (MIN.)
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
0.4 mm
Page 2 of 14
PS2535-1, PS2535L-1
MARKING EXAMPLE
No. 1 pin
Mark
R
Company Initial
2535
NJ031
Type Number
Assembly Lot
N J 0 31
Week Assembled
Year Assembled (Last 1 Digit)
In-house Code
CTR Rank Code
Made in Japan
Pb-Free
J
ORDERING INFORMATION
Part Number
Order Number *1
PS2535-1
PS2535-1-A
PS2535L-1
PS2535L-1-A
PS2535L-1-F3
PS2535L-1-F3-A
Solder Plating
Specification
Pb-Free
Safety Standard
Approval
Packing Style
Magazine case 100 pcs
Standard Products
(UL, BSI, Approved)
Embossed Tape 2 000
Application Part
Number *2
PS2535-1
PS2535L-1
PS2535L-1
pcs/reel
PS2535-1-V
PS2535-1-V-A
PS2535L-1-V
PS2535L-1-V-A
PS2535L-1-V-F3
PS2535L-1-V-F3-A
Magazine case 100 pcs
UL, BSI,
DIN EN 60747-5-5
Approved
Embossed Tape 2 000
PS2535-1
PS2535L-1
PS2535L-1
pcs/reel
Notes: *1. When specifying CTR rank, please add “/CTR rank” after Order Number.
ex. L rank : PS2535-1-A/L
Notes: *2. For the application of the safety standard, the following part number should be used.
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 3 of 14
PS2535-1, PS2535L-1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Forward Current (DC)
IF
50
mA
Reverse Voltage
VR
6
V
∆PD/°C
0.7
mW/°C
Power Dissipation
PD
70
mW
Peak Forward Current*1
IFP
0.5
A
Collector to Emitter Voltage
VCEO
350
V
Emitter to Collector Voltage
VECO
0.3
V
IC
120
mA
∆PC/°C
2.0
mW/°C
PC
200
mW
Isolation Voltage*2
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
–55 to +100
°C
Storage Temperature
Tstg
–55 to +150
°C
Diode
Power Dissipation Derating
Transistor
Collector Current
Power Dissipation Derating
Power Dissipation
Note:
*1. PW = 100 µs, Duty Cycle = 1 %
*2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 4 of 14
PS2535-1, PS2535L-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Diode
Symbol
Conditions
Forward Voltage
VF
IF = 10 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
MIN.
TYP.
MAX.
Unit
1.2
1.4
V
5
µA
15
pF
Transistor
Collector to Emitter
Dark Current
ICEO
VCE = 350 V, IF = 0 mA
Coupled
Current Transfer Ratio
(IC/IF) *1
CTR
IF = 1 mA, VCE = 2 V
Collector Saturation
Voltage
VCE (sat)
IF = 1 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
0.6
pF
VCC = 5 V, IC = 10 mA, RL = 100 Ω
18
µs
Rise Time
Fall Time
*2
*2
tr
400
1 500
400
nA
5 500
%
1.0
V
Ω
1011
tf
5
Note: *1. CTR rank
N: 400 to 5 500 (%)
L: 1 500 to 5 500 (%)
*2. Test Circuit for Switching Time
Pulse input
VCC
IF
Input
PW = 1 ms,
Duty cycle = 1/10
ton
td
toff
ts
VOUT
In monitor
50 Ω
90 %
RL = 100 Ω
Output
10 %
tr
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
tf
Page 5 of 14
PS2535-1, PS2535L-1
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
TRANSISTOR POW ER DISSIPATION vs.
AM BIENT TEM PERATURE
DIODE POW ER DISSIPATION vs.
AM BIENT TEM PERATURE
80
60
0.7 m W /℃
40
20
0
25
75
50
100
Transistor Pow er Dissip ation PC (m W )
Diode Pow er Dissip ation PD (m W )
100
240
220
200
180
160
140
120
100
80
60
40
20
2.0 m W /℃
25
0
Am b ient Tem p erature TA (℃)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
5 mA
3 mA
2 mA
50
Collector Current I C (m A)
Forw ard Current I F (m A)
100
TA = + 100 ℃
+ 60 ℃
+ 25 ℃
50
100
Am b ient Tem p erature TA (℃)
FORW ARD CURRENT vs.
FORW ARD VOLTAGE
100
75
50
10
5
0℃
–25 ℃
–50 ℃
1
0.5
1 mA
10
5
IF = 0.5 m A
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1
0.4
1.5
1.2
1.4
1.6
100
VCEO = 350 V
CEO
(nA)
1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EM ITTER VOLTAGE
COLLECTOR TO EM ITTER DARK
CURRENT vs. AM BIENT TEM PERATURE
10 000
1 000
CTR = 1 068 %
2 290 %
4 360 %
100
10
1
–50
–25
0
25
50
75
100
Am b ient Tem p erature TA (℃)
3 mA
5 mA
50
Collector Current I C (m A)
Collector to Em itter Dark Current I
0.8
Collector Saturation Voltag e V CE (sat) (V)
Forw ard Voltag e V F (V)
100 000
0.6
2 mA
1 mA
10
5
IF = 0.5 m A
1
0
1
2
3
Collector to Em itter Voltag e V
5
4
CE
(V)
Remark The graphs indicate nominal characteristics.
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 6 of 14
PS2535-1, PS2535L-1
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERTURE
CURRENT TRANSFERRATIO vs.
FORWARD CURRENT
4 500
VCE = 2 V
Normalized to 1.0
at TA = 25 ℃,
IF = 1 mA, VCE = 2 V
1.2
4 000
Current Transfer Ratio CTR(%)
Normalized Current Transfer Ratio CTR
1.4
1.0
0.8
0.6
0.4
0.2
0.0
50
25
25
0
75
50
100
3 500
3 000
2 500
2 000
1 500
1 000
500
0
0.1
0.5
1
5
10
40
Forword Current I F (mA)
Ambient Temperature TA (℃)
SWITCHING TIME vs.
LORD RESISTANCE
1 000
Switching Time t (μ s)
VCC = 10 V,
IC = 10 mA,
CTR= 1 800 %
tr
100
tf
td
10
ts
1
0.1
10
50
100
500
1000
Load Resistance RL (Ω)
Remark The graphs indicate nominal characteristics.
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 7 of 14
PS2535-1, PS2535L-1
TAPING SPECIFICATIONS (UNIT: mm)
Taping Direction
PS2561DL-1-F3
PS2535L-1-F3
Direction of feed
1.55±0.1
4.5 MAX.
10.3±0.1
7.5±0.1
1.5 +0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions ( Tape)
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Outline and Dimensions (Reel)
R1.0
100±1.0
2.0±0.5
13.0±0.2
330±2.0
2.0±0.5
21.0±0.8
17.5±1.0
21.5±1.0
Packing: 2 000 pcs/reel
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 8 of 14
PS2535-1, PS2535L-1
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
B
C
D
A
Part Number
PS2535L
Lead Bending
Lead Bending Type For Surface Mount
A
B
C
D
8.2
2.54
1.7
2.2
Remark All dimensions in this figure must be evaluated before use.
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 9 of 14
PS2535-1, PS2535L-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
• Time of peak reflow temperature
• Time of temperature higher than 220 °C
• Time to preheat temperature from 120 to 180 °C
• Number of reflows
• Flux
260 °C or below (package surface temperature)
10 seconds or less
60 seconds or less
120 ± 30 s
Three
Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of
0.2 Wt% is recommended.)
Package Surface Temperature T (°C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260 °C MAX.
220 °C
to 60 s
180 °C
120 °C
120 ± 30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
• Preheating conditions
• Number of times
• Flux
260 °C or below (molten solder temperature)
10 seconds or less
120 °C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum
chlorine content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
• Peak temperature (lead part temperature)
350 °C or below
• Time (per one side)
3 s or less
• Flux
Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of 0.2 Wt% is recommended.)
• Place
1.5 to 2.0 mm or more away from the root of the lead
(4) Cautions
• Flux cleaning
• Fixing/Coating
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Avoid cleaning with Freon- or halogen-based (chlorinated etc.) solvents.
Do not use fixing agents or coatings containing halogen-based substances.
Page 10 of 14
PS2535-1, PS2535L-1
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the
absolute maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ
according to product.
When using products other than at the specified forward current, the characteristics curves may differ from
the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the
actual operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1.
2.
3.
4.
Protect against static electricity when handling.
Avoid storage at a high temperature and high humidity.
Avoid cleaning with Freon based or halogen-based (chlorinated etc.) solvents.
Do not use fixing agents or coatings containing halogen-based substances.
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 11 of 14
PS2535-1, PS2535L-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Climatic test class (IEC 60068-1/DIN EN 60068-1)
Rating
Unit
55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random
test)
Vm = 1.6 × VIORM., qpd < 5 pC
Test voltage (partial discharge test, procedure b for all devices)
Vm = 1.875 × VIORM., qpd < 5 pC
Highest permissible overvoltage
VIORM
Vm
890
1 424
Vpeak
Vpeak
Vm
1 669
Vpeak
VIOTM
8 000
Vpeak
Degree of pollution (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303-11))
2
CTI
Material group (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1))
175
III a
Storage temperature range
Tstg
–55 to +150
°C
Operating temperature range
TA
–55 to +100
°C
RI-O MIN.
RI-O MIN.
1012
1011
Ω
Ω
Ts
ISI
PSO
RI-O MIN.
175
400
700
109
°C
mA
mW
Ω
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
VIO = 500 V dc at TA = maximum temperature of rating, at least 100 °C
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Maximum ambient temperature
Maximum input current
Maximum output power dissipation
Isolation resistance, minimum value at VI-O = 500 V dc, TA = TS
Output Power Dissipation Pso (mW)
Input Current IsI (mA)
Dependence of maximum safety ratings with package temperature
1000
900
800
700
Pso : Output Power Dissipation
600
500
400
300
200
100
IsI : Input Current
0
0
25
50
75
100
125
150
175
200
Ambient Temperature TA (°C)
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 12 of 14
PS2535-1, PS2535L-1
Method a) Destructive Test, Type and Sample Test
VIOTM = 8000 V
V
Vm = 1424 V
VIORM = 890 V
t3
tini
t1
t2
tm
t4
t
tst
t1,t2 = 1 to 10 sec
t3,t4 = 1 sec
tm = 10 sec
tst = 12 sec
tini = 60 sec
Method b) Non-destructive Test, 100 % Production Test
Vm = 1669 V
V
VIORM = 890 V
tst
t3
tm
t
t4
t3,t4 = 0.1 sec
tm = 1.0 sec
tst = 1.2 sec
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 13 of 14
PS2535-1, PS2535L-1
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or i any way allow it to enter the mouth.
All trademarks and registered trademarks are the property of their respective owners.
R08DS0199EJ0101 Rev.1.01
Nov 4, 2022
Page 14 of 14
Notice
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products
and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your
product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use
of these circuits, software, or information.
Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights,
or other intellectual property rights of third parties, by or arising from the use of Renesas Electronics products or technical information described in this
document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics
or others.
You shall be responsible for determining what licenses are required from any third parties, and obtaining such licenses for the lawful import, export,
manufacture, sales, utilization, distribution or other disposal of any products incorporating Renesas Electronics products, if required.
You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any
and all liability for any losses or damages incurred by you or third parties arising from such alteration, modification, copying or reverse engineering.
Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The intended applications for
each Renesas Electronics product depends on the product’s quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home
electronic appliances; machine tools; personal electronic equipment; industrial robots; etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale communication equipment; key
financial terminal systems; safety control equipment; etc.
Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas
Electronics document, Renesas Electronics products are not intended or authorized for use in products or systems that may pose a direct threat to
human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space
system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). Renesas Electronics
disclaims any and all liability for any damages or losses incurred by you or any third parties arising from the use of any Renesas Electronics product
that is inconsistent with any Renesas Electronics data sheet, user’s manual or other Renesas Electronics document.
No semiconductor product is absolutely secure. Notwithstanding any security measures or features that may be implemented in Renesas Electronics
hardware or software products, Renesas Electronics shall have absolutely no liability arising out of any vulnerability or security breach, including but
not limited to any unauthorized access to or use of a Renesas Electronics product or a system that uses a Renesas Electronics product. RENESAS
ELECTRONICS DOES NOT WARRANT OR GUARANTEE THAT RENESAS ELECTRONICS PRODUCTS, OR ANY SYSTEMS CREATED USING
RENESAS ELECTRONICS PRODUCTS WILL BE INVULNERABLE OR FREE FROM CORRUPTION, ATTACK, VIRUSES, INTERFERENCE,
HACKING, DATA LOSS OR THEFT, OR OTHER SECURITY INTRUSION (“Vulnerability Issues”). RENESAS ELECTRONICS DISCLAIMS ANY AND
ALL RESPONSIBILITY OR LIABILITY ARISING FROM OR RELATED TO ANY VULNERABILITY ISSUES. FURTHERMORE, TO THE EXTENT
PERMITTED BY APPLICABLE LAW, RENESAS ELECTRONICS DISCLAIMS ANY AND ALL WARRANTIES, EXPRESS OR IMPLIED, WITH
RESPECT TO THIS DOCUMENT AND ANY RELATED OR ACCOMPANYING SOFTWARE OR HARDWARE, INCLUDING BUT NOT LIMITED TO
THE IMPLIED WARRANTIES OF MERCHANTABILITY, OR FITNESS FOR A PARTICULAR PURPOSE.
When using Renesas Electronics products, refer to the latest product information (data sheets, user’s manuals, application notes, “General Notes for
Handling and Using Semiconductor Devices” in the reliability handbook, etc.), and ensure that usage conditions are within the ranges specified by
Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation characteristics, installation, etc. Renesas
Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electronics products outside of such
specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific
characteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Unless designated as a high reliability
product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics
products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily
injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics products, such as
safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for
aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and impractical, you are
responsible for evaluating the safety of the final products or systems manufactured by you.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas
Electronics product. You are responsible for carefully and sufficiently investigating applicable laws and regulations that regulate the inclusion or use of
controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in compliance with all these
applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance
with applicable laws and regulations.
Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicable export control laws and regulations
promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions.
It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells or
transfers the product to a third party, to notify such third party in advance of the contents and conditions set forth in this document.
This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas
Electronics products.
(Note1)
(Note2)
“Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its directly or indirectly controlled
subsidiaries.
“Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
(Rev.5.0-1 October 2020)
Corporate Headquarters
TOYOSU FORESIA, 3-2-24 Toyosu,
Koto-ku, Tokyo 135-0061, Japan
www.renesas.com
Contact information
For further information on a product, technology, the most up-to-date
version of a document, or your nearest sales office, please visit:
www.renesas.com/contact/.
Trademarks
Renesas and the Renesas logo are trademarks of Renesas Electronics
Corporation. All trademarks and registered trademarks are the property
of their respective owners.
© 2022 Renesas Electronics Corporation. All rights reserved.
