Data Sheet
PS2581L1, PS2581L2
LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER
R08DS0208EJ0100
Rev.1.00
Dec 25, 2020
DESCRIPTION
The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor in a plastic DIP (Dual In-line Package).
Creepage distance and clearance of leads are over 8 millimeters.
The PS2581L2 is wide lead bending type for surface mount.
FEATURES
Long creepage and clearance distance (8 mm)
High isolation voltage (BV = 5 000 Vr.m.s.)
High collector to emitter voltage (VCEO = 80 V)
High-speed switching (tr = 3 s TYP., tf = 5 s TYP.)
High current transfer ratio (CTR = 200% TYP.)
Ordering number of taping product: PS2581L2-F3 : 2 000 pcs/reel
Pb-Free product
Safety standards
UL approved: UL1577, Double protection
CSA approved: CAN/CSA-C22.2 No. 62368-1, Reinforced insulation
BSI approved: BS EN 62368-1, Reinforced insulation
SEMKO approved: EN 62368-1, IEC 62368-1, Reinforced insulation
NEMKO approved: EN 62368-1, Reinforced insulation
FIMKO approved: EN 62368-1, Reinforced insulation
DEMKO approved: EN 62368-1, Reinforced insulation
VDE approved: DIN EN 60747-5-5
PIN CONNECTION
(Top View)
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
APPLICATIONS
Power supply
Telephone/FAX.
FA/OA equipment
Programmable logic controllers
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 1 of 14
PS2581L1, PS2581L2e
PACKAGE DIMENSIONS (UNIT: mm)
Wide Lead Bending Type
PS2581L1
6.5+0.5
–0.1
1.0±0.2
4.6±0.35
10.16
3.5±0.3
0.35
3.2±0.4 4.15±0.4
7.62
2.54
0.50±0.1
0.25 M
0.25+0.1
–0.05
1.25±0.15
0 to 15°
Wide Lead Bending Type For Surface Mount
PS2581L2
4.6±0.35
6.5+0.5
–0.1
1.0±0.2
10.16
3.5±0.3
0.25+0.15
–0.2
7.62
1.25±0.15
0.25 M
0.9±0.25
2.54
12.0 MAX.
Weight ( 4-pin DIP)：0.26 g (typ.)
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 2 of 14
PS2581L1, PS2581L2e
PHOTOCOUPLER CONSTRUCTION
Parameter
Unit (mm)
Air Distance (MIN.)
8
Creepage Distance (MIN.)
8
Isolation Distance (MIN.)
0.4
MARKING EXAMPLE
No. 1 pin
Mark
Company Initial
Type Number
Assembly Lot
R
2581
NJ831
VDE Mark
Assembly Lot
N
J
8
31
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Made in Japan Made in Taiwan
Pb-Free
J
K
Pb-Free and
R
Y
Halogen Free *1
*1 Special version
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 3 of 14
PS2581L1, PS2581L2e
ORDERING INFORMATION
Part Number
Order Number *1
Solder Plating
Packing Style
Safety Standard
Application
Approval
Part Number *2
Specification
PS2581L1
PS2581L1-A
Pb-Free
PS2581L2
PS2581L2-A
PS2581L2-E3
PS2581L2-F3-A
PS2581L1
PS2581L1-Y-A
PS2581L2
PS2581L2-Y-A
PS2581L2-E3
PS2581L2-Y-F3-A
Magazine case 100 pcs
Embossed Tape 2 000 pcs/reel
Special
version
(Pb-Free and
Halogen Free)
Magazine case 100 pcs
UL, CSA, BSI,
SEMKO, NEMKO,
FIMKO, DEMKO,
DIN EN 60747-5-5
approved
PS2581L1
PS2581L2
PS2581L1
PS2581L2
Embossed Tape 2 000 pcs/reel
Notes: *1. When specifying CTR rank, please add “/CTR rank” after Order Number.
ex. L rank : PS2581L1-A/L
Notes: *2. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Forward Current (DC)
IF
80
mA
Reverse Voltage
VR
6
V
PD/C
1.5
mW/C
PD
150
mW
IFP
1
A
Collector to Emitter Voltage
VCEO
80
V
Emitter to Collector Voltage
VECO
7
V
IC
50
mA
PC/C
1.5
mW/C
PC
150
mW
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
–55 to +100
C
Storage Temperature
Tstg
–55 to +150
C
Diode
Power Dissipation Derating
Power Dissipation
Peak Forward
Transistor
Current*1
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation
Note:
Voltage*2
*1. PW = 100 s, Duty Cycle = 1 %
*2. AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 4 of 14
PS2581L1, PS2581L2e
ELECTRICAL CHARACTERISTICS (TA = 25 C)
Parameter
Diode
Symbol
Conditions
Forward Voltage
VF
IF = 10 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
Transistor
Collector to Emitter
Dark Current
ICEO
VCE = 80 V, IF = 0 mA
Coupled
Current Transfer Ratio
(IC/IF)*1
CTR
IF = 5 mA, VCE = 5 V
Collector Saturation
Voltage
VCE (sat)
IF = 10 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
Rise Time*2
Fall
Note:
tr
Time*2
MIN.
TYP.
MAX.
Unit
1.17
1.4
V
5
A
50
80
pF
200
100
nA
400
%
0.3
V
1011
VCC = 10 V, IC = 2 mA, RL = 100
tf
0.5
pF
3
s
5
*1. CTR rank
L : 200 to 400 (%)
M :
80 to 240 (%)
D : 100 to 300 (%)
H :
80 to 160 (%)
W : 130 to 260 (%)
N : 80 to 400 (%)
*2. Test Circuit for Switching Time
Pulse Input
VCC
Input
PW = 100 μs
Duty cycle = 1/10
ton
IF
td
In monitor
VOUT
50 Ω
toff
ts
RL = 100 Ω
90%
Output
10%
tr
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
tf
Page 5 of 14
PS2581L1, PS2581L2e
TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
150
100
50
0
25
50
75
100
125
150
100
50
0
25
Ambient Temperature TA (°C)
100
125
150
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
70
50
TA = +100 °C
+60 °C
+25 °C
60
Collector Current I C (mA)
Forward Current I F (mA)
75
Ambient Temperature TA (°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
10
5
0 °C
–25 °C
–55 °C
1
0.5
50
40
mA
50
mA
20 mA
10
30
20
IF = 5 mA
10
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
2
4
6
8
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
10 000
Collector Current I C (mA)
VCE = 80 V
40 V
24 V
10 V
5V
1 000
100
10
1
– 50
–25
0
25
50
10
Collector to Emitter Voltage V CE (V)
Forward Voltage V F (V)
Collector to Emitter Dark Current I CEO (nA)
50
75
100
Ambient Temperature TA (°C)
50 mA
20 mA
10 mA
10
5 mA
5
2 mA
IF = 1 mA
1
0.5
0.1
0
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage V CE (sat) (V)
Remark The graphs indicate nominal characteristics.
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 6 of 14
PS2581L1, PS2581L2e
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
450
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
1.2
1.0
0.8
0.6
0.4
Normalized to 1.0
at TA = 25 °C,
IF = 5 mA, VCE = 5 V
0.2
0
–50
–25
0
25
50
75
400
350
300
250
200
150
100
50
0
100
0.05 0.1
0.5
Ambient Temperature TA (°C)
1 000
IC = 2 mA,
VCC = 10 V,
CTR = 290 %
10
50
SWITCHING TIME vs.
LOAD RESISTANCE
50
tf
IF = 5 mA,
VCC = 5 V,
CTR = 290 %
tf
tr
Switching Time t ( μ s)
Switching Time t ( μ s)
5
Forward Current IF (mA)
SWITCHING TIME vs.
LOAD RESISTANCE
10
1
td
ts
1
ts
100
10
tr
0.1
10
50 100
500 1 k
5 k 10 k
Load Resistance R L (Ω)
1
100
td
500 1 k
5 k 10 k
50 k 100 k
Load Resistance R L (Ω)
FREQUENCY RESPONSE
IF = 5 mA,
VCE = 5 V
Normalized Gain GV
0
–5
–10
100 Ω
–15
RL = 1 kΩ
–20
300 Ω
0.5
1
2
5
10 20
50 100 200 500
Frequency f (kHz)
Remark The graphs indicate nominal characteristics.
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 7 of 14
PS2581L1, PS2581L2e
TAPING SPECIFICATIONS (UNIT: mm)
Taping Direction
PS2581L2-F3
Direction of feed
2.05±0.1
5.3
4.6 max.
12.5
11.5±0.1
f 1.5+0.1
–0
24.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
0.4
8.0±0.1
Outline and Dimensions (Reel)
2.0±0.5
f 21.0±0.8
f 100±1.0
R 1.0
f 330±2.0
f 13.0±0.2
25.5±1.0
29.5±1.0
Packing: 2 000 pcs/reel
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 8 of 14
PS2581L1, PS2581L2e
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
B
C
D
A
Part Number
Lead Bending
A
B
C
D
PS2581L2
Wide Lead Bending Type For Surface Mount
10.2
2.54
1.7
2.2
Remark All dimensions in this figure must be evaluated before use.
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 9 of 14
PS2581L1, PS2581L2e
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220C
60 seconds or less
• Time to preheat temperature from 120 to 180C 12030 s
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of
0.2 Wt% is recommended.)
Package Surface Temperature T (C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260C MAX.
220C
to 60 s
180C
120C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
• Preheating conditions
• Number of times
• Flux
260C or below (molten solder temperature)
10 seconds or less
120C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum
chlorine content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350C or below
• Time (each pins)
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(b) Please be sure that the temperature of the package would not be heated over 100C
(4) Cautions
• Flux Cleaning
Avoid cleaning with Freon based or halogen-based (chlorinated etc.) solvents.
• Do not use fixing agents or coatings containing halogen-based substances.
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 10 of 14
PS2581L1, PS2581L2e
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the
absolute maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ
according to product.
When using products other than at the specified forward current, the characteristics curves may differ
from the standard curves due to CTR value variations or the like. This tendency may sometimes be
obvious, especially below IF = 1 mA.
Therefore, check the characteristics under the actual operating conditions and thoroughly take variations
or the like into consideration before use.
USAGE CAUTIONS
1.
2.
3.
4.
Protect against static electricity when handling.
Avoid storage at a high temperature and high humidity.
Avoid cleaning with Freon based or halogen-based (chlorinated etc.) solvents.
Do not use fixing agents or coatings containing halogen-based substances.
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 11 of 14
PS2581L1, PS2581L2e
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Climatic test class (IEC 60068-1/DIN EN 60068-1)
Rating
Unit
55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
Upr = 1.6 UIORM, Pd 5 pC
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 UIORM, Pd 5 pC
Highest permissible overvoltage
UIORM
Upr
1 130
1 808
Vpeak
Vpeak
Upr
2 119
Vpeak
UIOTM
8 000
Vpeak
Degree of pollution (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303-11))
2
CTI
Material group (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1))
175
III a
Storage temperature range
Tstg
–55 to +150
C
Operating temperature range
TA
–55 to +100
C
Ris MIN.
Ris MIN.
1012
1011
Tsi
Isi
Psi
175
400
700
C
mA
mW
Ris MIN.
109
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25C
VIO = 500 V dc at TA MAX. at least 100C
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Total Power Dissipation Psi (mW)
Input Current Isi (mA)
Dependence of maximum safety ratings with package temperature
1000
900
800
700
600
Psi: Total Power Dissipation
500
400
300
Isi: Input Current
200
100
0
0
25
50
75
100
125
150
175
200
Package temp Tsi (°C)
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 12 of 14
PS2581L1, PS2581L2e
Method a) Destructive Test, Type and Sample Test
UIOTM =8000V
V
Upr =1808V
UIORM =1130V
t3
t1
tini
t2
tm
t4
t
ttest
t1,t2 = 1 to 10 sec
t3,t4 = 1 sec
tm(PARTIAL DISCHARGE)= 10 sec
ttest = 12 sec
tini = 60 sec
Method b) Non-destructive Test, 100% Production Test
Upr =2119V
V
UIORM =1130V
ttest
t3
tm
t
t4
t3,t4 = 0.1 sec
tm(PARTIAL DISCHARGE)= 1.0 sec
ttest = 1.2 sec
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 13 of 14
PS2581L1, PS2581L2e
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or i any way allow it to enter the mouth.
All trademarks and registered trademarks are the property of their respective owners.
R08DS0208EJ0100 Rev.1.00
Dec 25, 2020
Page 14 of 14
Notice
1.
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17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5338
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