Data Sheet
PS2801C-1, PS2801C-4
HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER
R08DS0072EJ0400
Rev.4.00
Jan 9, 2013
DESCRIPTION
These products are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon
phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.
This package has shield effect to cut off ambient light.
FEATURES
•
•
•
•
•
•
PIN CONNECTION
High isolation voltage (BV = 2 500 Vr.m.s.)
Small and thin package (4, 16-pin SSOP, Pin pitch 1.27 mm)
High collector to emitter voltage (VCEO : 80 V)
Ordering number of tape product: PS2801C-1-F3, PS2801C-4-F3
Pb-Free product
Safety standards
• UL approved: File No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• BSI approved (BS EN 60065, BS EN 60950) (PS2801C-1 only)
• DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
(Top View)
PS2801C-1
4 3
1. Anode
2. Cathode
3. Emitter
4. Collector
1 2
PS2801C-4
16 15 14 13 12 11 10 9
APPLICATIONS
•
•
•
•
1 2 3 4 5 6 7 8
Programmable logic controllers
Measuring instruments
Power supply
Hybrid IC
1. 3. 5. 7.
2. 4. 6. 8.
9. 11. 13. 15.
10. 12. 14. 16.
Anode
Cathode
Emitter
Collector
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 1 of 12
PS2801C-1, PS2801C-4e
PACKAGE DIMENSIONS (UNIT: mm)
PS2801C-1
PS2801C-4
2.7±0.3
10.3±0.3
16
9
1
2
1
8
7.0±0.3
4.4
4.4
0.1±0.1
0.5±0.3
1.27
0.4±0.1
0.12 M
0.15+0.10
–0.05
7.0±0.3
2.0+0.3
–0.2
2.0±0.1
0.15+0.10
–0.05
3
0.1±0.1
4
0.40+0.10
–0.05
0.12 M
1.27
0.5±0.3
PHOTOCOUPLER CONSTRUCTION
Parameter
Unit (MIN.)
Air Distance
4.5 mm
Outer Creepage Distance
Inner Creepage Distance
Isolation Distance
4.5 mm
2.5 mm
0.1 mm
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 2 of 12
PS2801C-1, PS2801C-4e
MARKING EXAMPLE
PS2801C-1
Company initial
Made in Taiwan
Last 2 numbers of type
No. : 1C
Assembly Lot
301
Week Assembled
Year Assembled (Last 1 digit)
Made in Taiwan
Halogen free
"
" (Vertical bar)
:Made in Taiwan & Halogen free
"
" (Square)
:Made in Japan
"
" (Horizontal bar)
:Made in Japan & Halogen free
Made in Japan
Made in Japan
Halogen free
PS2801C-4
R
Country Assembled
PS2801C-4
NL301
Assembly Lot
No. 1 pin
Mark
N L 3 01
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
(L: Pb-Free)
Rank Code
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 3 of 12
PS2801C-1, PS2801C-4e
ORDERING INFORMATION
Part Number
Order Number
PS2801C-1-F3
PS2801C-1-F3-A
Solder Plating
Specification etc.
Pb-Free
Safety Standard
Approval
Application
*1
Part Number
Embossed Tape 3 500 pcs/reel
Standard products
PS2801C-1
PS2801C-4
Packing Style
PS2801C-4-F3
PS2801C-4-F3-A
Embossed Tape 2 500 pcs/reel
(UL, CSA, BSI
approved)
PS2801C-1-V-F3
PS2801C-1-V-F3-A
Embossed Tape 3 500 pcs/reel
DIN EN 60747-5-5
PS2801C-1
Embossed Tape 2 500 pcs/reel
(VDE0884-5)
Approved (Option)
PS2801C-4
Embossed Tape 3 500 pcs/reel
Standard products
PS2801C-1
PS2801C-4-V-F3
PS2801C-4-V-F3-A
PS2801C-1-F3
PS2801C-1Y-F3-A
Special version
(Pb-Free and
Halogen Free)
PS2801C-1-V-F3
PS2801C-1Y-V-F3-A
(UL, CSA, BSI
approved)
Embossed Tape 3 500 pcs/reel
DIN EN 60747-5-5
(VDE0884-5)
Approved (Option)
Note: *1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Diode
Parameter
Symbol
Ratings
PS2801C-1
PS2801C-4
Unit
Forward Current (DC)
IF
30
mA/ch
Reverse Voltage
VR
6
V
Power Dissipation Derating
Power Dissipation
*1
ΔPD/°C
0.6
0.8
mW/°C
PD
60
80
mW/ch
IFP
0.5
A/ch
Collector to Emitter Voltage
VCEO
80
V
Emitter to Collector Voltage
VECO
5
V
IC
30
mA/ch
ΔPC/°C
1.2
mW/°C
PC
120
mW/ch
BV
2 500
Vr.m.s.
Operating Ambient Temperature
TA
−55 to +100
°C
Storage Temperature
Tstg
−55 to +150
°C
Peak Forward Current
Transistor
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
Notes:
*2
*1. PW = 100 μs, Duty Cycle = 1%
*2. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together (PS2801C-1).
Pins 1-8 shorted together, 9-16 shorted together (PS2801C-4).
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 4 of 12
PS2801C-1, PS2801C-4e
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Diode
Symbol
Conditions
Forward Voltage
VF
IF = 5 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
Transistor
Collector to Emitter
Dark Current
ICEO
VCE = 80 V, IF = 0 mA
Coupled
Current Transfer Ratio
*1
(IC/IF)
CTR
IF = 5 mA, VCE = 5 V
Collector Saturation
Voltage
VCE (sat)
IF = 10 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
Rise Time
Fall Time
*2
tr
*2
Turn-on Time
*2
Turn-off Time
*2
Notes:
MIN.
TYP.
MAX.
Unit
1.2
1.4
V
5
μA
10
pF
50
0.13
10
VCC = 5 V, IC = 2 mA, RL = 100 Ω
100
nA
400
%
0.3
V
Ω
11
0.4
pF
5
μs
tf
7
ton
10
toff
7
*1. CTR rank
PS2801C-1
N : 50 to 400 (%)
P : 150 to 300 (%)
L : 100 to 300 (%)
M : 100 to 400 (%)
PS2801C-4
N : 50 to 400 (%)
M : 100 to 400 (%)
*2. Test circuit for switching time
VCC
Pulse Input
PW = 100 μ s
Duty Cycle = 1/10
Input
ton
IF
td
toff
ts
VOUT
50 Ω
RL = 100 Ω
90%
Output
10%
tr
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
tf
Page 5 of 12
PS2801C-1, PS2801C-4e
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
100
80
PS2801C-4
60
0.8 mW/°C
PS2801C-1
40
0.6 mW/°C
20
0
0
25
50
75
100
125
10
160
PS2801C-1
PS2801C-4
120
1.2 mW/°C
80
40
0
0
25
50
75
100
125
Ambient Temperature TA (°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
TA = +100°C
+60°C
+25°C
Collector Current IC (mA)
Forward Current IF (mA)
50
200
Ambient Temperature TA (°C)
100
5
0° C
–25°C
–55°C
1
0.5
CTR = 250%
IF = 10 mA
25
20
5 mA
15
10
2 mA
5
1 mA
0.1
0.05
0.7
Collector to Emitter Dark Current ICEO (nA)
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
0
1.5
2
4
6
8
10
Forward Voltage VF (V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10
10 000
IF = 10 mA
5 mA
Collector Current IC (mA)
VCE = 80 V
1 000
70 V
100
24 V
10
1
0
25
50
CTR = 200%
75
100
Ambient Temperature TA (°C)
2 mA
1 mA
1
0.1
0
0.2
0.4
0.6
CTR = 250%
0.8
1.0
Collector Saturation Voltage VCE (sat) (V)
Remark The graphs indicate nominal characteristics.
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 6 of 12
PS2801C-1, PS2801C-4e
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.4
Current Transfer Ratio CTR (%)
1.2
1.0
80%
0.8
0.6
0.4
Normalized to 1.0
0.2 at TA = 25°C,
IF = 5 mA, VCE = 5 V
0
–75 –50 –25
0
100
Switching Time t (μ s)
400
CTR = 250%
25
50
75
VCE = 5 V,
n=3
300
Sample A
B
C
200
100
0
0.01
100
0.1
1
10
Ambient Temperature TA (°C)
Forward Current IF (mA)
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
100
1 000
IC = 2 mA, VCC = 5 V,
CTR = 228%
IF = 5 mA, VCC = 5 V,
CTR = 228%
tf
Switching Time t (μs)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
tr
10
td
ts
1
tf
100
ts
10
tr
td
0.1
10
100
1 000
10 000
1
1
10
100
Load Resistance RL (kΩ)
Load Resistance RL (Ω)
FREQUENCY RESPONSE
5
Normalized Gain Gv
0
100 Ω
–5
RL = 1 kΩ
–10
–15
300 Ω
–20
IF = 5 mA,
VCE = 5 V
–25
0.1
1
10
100
1 000
Frequency f (kHz)
Remark The graphs indicate nominal characteristics.
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 7 of 12
PS2801C-1, PS2801C-4e
TAPING SPECIFICATIONS (UNIT: mm)
2.0±0.1
φ 1.5+0.1
–0
4.0±0.1
16.0±0.3
7.55±0.1
1.75±0.1
Outline and Dimensions (Tape)
7.5±0.1
2.8 MAX.
0.3
1.55±0.1
2.3±0.1
2.85±0.1
4.0±0.1
Tape Direction
PS2801C-1-F3
R1C
301
R1C
301
R1C
301
R1C
301
R1C
301
Outline and Dimensions (Reel)
2.0±0.5
φ13.0±0.2
R 1.0
φ 21.0±0.8
φ 100±1.0
2.0±0.5
φ 330±2.0
17.5±1.0
21.5±1.0
Packing: 3 500 pcs/reel
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
15.9 to 19.4
Outer edge of
flange
Page 8 of 12
PS2801C-1, PS2801C-4e
2.8 MAX.
8.3±0.1
1.55±0.1
10.7±0.1
7.5±0.1
φ 1.5+0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
0.3
2.3±0.1
12.0±0.1
Tape Direction
PS2801C-4-F3
Outline and Dimensions (Reel)
2.0±0.5
φ 21.0±0.8
φ 100±1.0
R 1.0
φ 330±2.0
2.0±0.5
φ13.0±0.2
17.5±1.0
21.5±1.0
Packing: 2 500 pcs/reel
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
15.9 to 19.4
Outer edge of
flange
Page 9 of 12
PS2801C-1, PS2801C-4e
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
• Time of peak reflow temperature
• Time of temperature higher than 220°C
• Time to preheat temperature from 120 to 180°C
• Number of reflows
• Flux
260°C or below (package surface temperature)
10 seconds or less
60 seconds or less
120±30 s
Three
Rosin flux containing small amount of chlorine (The
flux with a maximum chlorine content of 0.2 Wt% is
recommended.)
Recommended Temperature Profile of Infrared Reflow
Package Surface Temperature T (°C)
(heating)
to 10 s
260°C MAX.
220°C
to 60 s
180°C
120°C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
• Preheating conditions
• Number of times
•
Flux
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature)
• Time (each pins)
• Flux
260°C or below (molten solder temperature)
10 seconds or less
120°C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic
mold portion.)
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
350°C or below
3 seconds or less
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 10 of 12
PS2801C-1, PS2801C-4e
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collectoremitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below
IF = 1 mA.
Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like
into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 11 of 12
PS2801C-1, PS2801C-4e
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Climatic test class (IEC 60068-1/DIN EN 60068-1)
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
Upr = 1.6 × UIORM, Pd < 5 pC
Spec.
Unit
55/100/21
UIORM
Upr
705
1 128
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC
Upr
1 322
Vpeak
Highest permissible overvoltage
UTR
6 000
Vpeak
CTI
175
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303
Part 11))
2
Material group (DIN EN 60664-1 VDE0110 Part 1)
III a
Storage temperature range
Tstg
−55 to +150
°C
Operating temperature range
TA
−55 to +100
°C
Ris MIN.
Ris MIN.
1012
11
10
Ω
Ω
Tsi
Isi
Psi
150
300
500
°C
mA
mW
Ris MIN.
109
Ω
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
R08DS0072EJ0400 Rev.4.00
Jan 9, 2013
Page 12 of 12
Revision History
PS2801C-1, PS2801C-4 Data Sheet
Rev.
Date
Page
1.00
4.00
May 30, 2006
Jan 9, 2013
−
Throughout
p.1
p.2
p.3
p.4
p.5
p.7
p.8
p.9
Description
Summary
This data sheet was released as PN10610EJ01V0DS
Renesas format is applied to this data sheet.
The ordering number and safety standards are revised.
PHOTOCOUPLER CONSTRUCTION is added as each distance of this
device.
The explanation in MARKING EXAMPLE is revised.
ORDERING INFORMATION is modified with the revision of the safety
standards.
Turn-on Time (ton) and Turn-off Time (toff) are added to the table in
ELECTRICAL CHARACTERISTICS.
The graph of LONG TERM CTR DEGRADATION is deleted from those in
TYPICAL CHARACTERISTICS.
PS2801C-1-F4 is deleted form Tape Direction image in TAPING
SPECIFICATIONS.
PS2801C-4-F4 is deleted form Tape Direction image in TAPING
SPECIFICATIONS.
p.10
The note about temperature condition of the recommended soldering
conditions is deleted.
p.12
The values in SPECIFICATION OF VDE MARKS LICENSE DOCUMENT are
changed as follows.
-- Test voltage is changed from the factor, 1.5, and the value, 1058, to 1.6
and 1128, respectively.
-- Clearance distance is moved to PHOTOCOUPLER CONSTRUCTION with
changing 5.0 (min.) to 4.5 (min.).
All trademarks and registered trademarks are the property of their respective owners.
C-1
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1.
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use of these circuits, software, or information.
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Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
[Colophon 2.2]
