Data Sheet
PS9113
R08DS0124EJ0301
Rev.3.01
Oct 29, 2018
1 Mbps, OPEN COLLECTOR OUTPUT
HIGH CMR, INTELLIGENT POWER MODULE DRIVE 5-PIN SOP (SO-5) PHOTOCOUPLER
DESCRIPTION
The PS9113 is an optically coupled isolator containing an AlGaAs LED on the input side and a photo diode and a signal
processing circuit on the output side on one chip.
The PS9113 is specified high CMR, high CTR and pulse width distortion with operating temperature. It is suitable for
IPM drive.
FEATURES
High instantaneous common mode rejection voltage (CMH, CML = ±15 kV/µs MIN.)
Small package (SO-5)
High-speed response (tPHL = 500 ns MAX., tPLH = 750 ns MAX.)
Propagation Delay Difference (tPLH – tPHL = 270 ns TYP.)
Pulse width distortion (|tPHL – tPLH| = 270 ns TYP.)
High isolation voltage (BV = 3 750 Vr.m.s.)
Open collector output
Ordering number of taping product: PS9113-F3: 2 500 pcs/reel
Pb-Free product
Safety standards
UL approved: UL1577, Single protection
CSA approved: CAN/CSA-C22.2 No. 62368-1, Basic insulation
VDE approved: DIN EN 60747-5-5 (Option)
PIN CONNECTION
(Top View)
5
4
3
1. Anode
2. Cathode
3. GND
4. VO
5. VCC
1
2
APPLICATIONS
IPM Driver
General purpose inverter
Start of mass production
Jan.2003
R08DS0124EJ0301 Rev.3.01
Oct 29, 2018
Page 1 of 15
PS9113
PACKAGE DIMENSIONS (UNIT: mm)
3.4
5
+0.3
–0.1
4
3
7.0±0.3
(4.4)*1
2
0.1±0.1
2.6±0.2
0.15 +0.10
–0.05
1
0.5±0.3
1.27
0.4+0.10
–0.05
0.25 M
*1 ( ) indicates reference dimension.
Weight: 0.08g (typ.)
PHOTOCOUPLER CONSTRUCTION
Parameter
PS9113
Air Distance (MIN.)
4.2 mm
Creepage Distance (MIN.)
4.2 mm
Isolation Distance (MIN.)
0.2 mm
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Oct 29, 2018
Page 2 of 15
PS9113
FUNCTIONAL DIAGRAM
5
1
4
2
3
Shield
LED
Output
ON
L
OFF
H
MARKING EXAMPLE
Ni/Pd/Au PLATING
9113
N931
No. 1 pin Mark
Initial of Renesas
(Engraved mark)
Type Number
Assembly Lot
*1
R
N
9 31
Week Assembled
Year Assembled
(Last 1 Digit)
Rank Code
*1
Bar : Pb-Free
R08DS0124EJ0301 Rev.3.01
Oct 29, 2018
Page 3 of 15
PS9113
ORDERING INFORMATION
Part Number
Order Number
PS9113
PS9113-AX
PS9113-F3
PS9113-F3-AX
PS9113-V
PS9113-V-F3
PS9113-V-AX
PS9113-V-F3-AX
Solder Plating
Specification
Pb-Free
(Ni/Pd/Au)
Packing Style
Safety Standard
Approval
20 pcs (Tape 20 pcs cut)
Standard products
Embossed Tape 2500
pcs/reel
(UL, CSA approved)
20 pcs (Tape 20 pcs cut)
Embossed Tape 2 500
pcs/reel
UL, CSA,
DIN EN 60747-5-5
approved
Application
Part
Number*1
PS9113
Notes*: 1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
IF
25
mA
Diode
Forward Current*1
Reverse Voltage
VR
5
V
Detector
Supply Voltage
VCC
0.5 to +25
V
Output Voltage
VO
0.5 to +25
V
Output Current
IO
15
mA
Power Dissipation*2
PC
100
mW
BV
3 750
Vr.m.s.
Operating Ambient Temperature
TA
40 to +100
C
Storage Temperature
Tstg
55 to +125
C
Isolation Voltage*3
Notes*: 1. Reduced to 0.33 mA/°C at TA = 70°C or more.
2. Reduced to 1.9 mW/°C at TA = 70°C or more.
3. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-5 shorted together.
R08DS0124EJ0301 Rev.3.01
Oct 29, 2018
Page 4 of 15
PS9113
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
IFH
10
High Level Input Current
Output Voltage
VO
0
Supply Voltage
VCC
4.5
LED Off Voltage
VF
0
TYP.
MAX.
Unit
20
mA
20
V
20
V
0.8
V
15
ELECTRICAL CHARACTERISTICS (TA = –40 to +100°C, VCC = 15 V, unless otherwise specified)
Diode
Parameter
Symbol
Forward Voltage
VF
Conditions
IF = 10 mA
Reverse Current
IR
VR = 3 V
Terminal Capacitance
Ct
V = 0 V, f = 1 MHz, TA = 25C
MIN.
TYP.*1
MAX.
Unit
1.3
1.65
2.1
V
200
A
30
pF
Detector Low Level Output Voltage
VOL
IF = 10 mA, IOL = 2.4 mA
0.13
0.6
V
High Level Output Current
IOH
VCC = VO = 20 V, VF = 0.8 V
0.01
50
A
High Level Supply Current
ICCH
VCC = 20 V, VF = 0.8 V, VO = open
1.0
1.3
mA
Low Level Supply Current
ICCL
VCC = 20 V, IF = 10 mA, VO = open
1.0
1.3
mA
1.5
5.0
mA
Coupled Threshold Input Current
(H L)
Current Transfer Ratio
(IC/IF)
Isolation Resistance
Isolation Capacitance
IFHL
CTR
RI-O
VO = 0.8 V, IO = 0.75 mA
IF = 10 mA, VO = 0.6 V
VI-O = 1 kVDC, RH = 40 to 60%,
TA = 25C
44
110
%
1011
CI-O
V = 0 V, f = 1 MHz, TA = 25C
0.6
Propagation Delay Time
(H L)*2
tPHL
IF = 10 mA, RL = 20 k,
CL = 100 pF,
250
500
Propagation Delay Time
(L H)*2
tPLH
520
750
270
650
270
650
Propagation Delay
Difference
Between Any 2 Parts
Pulse Width Distortion
(PWD)*2
VTHHL = 1.5 V, VTHLH = 2.0 V
tPLHtPHL
200
tPHL-tPLH
pF
ns
Common Mode
Transient Immunity at
High Level Output*3
CMH
TA = 25C, IF = 0 mA,
VO > 3.0 V, VCM = 1.5 kV,
RL = 20 k, CL = 100 pF
15
kV/s
Common Mode
Transient Immunity at
Low Level Output*3
CML
TA = 25C, IF = 10 mA,
VO < 1.0 V, VCM = 1.5 kV,
RL = 20 k, CL = 100 pF
-15
kV/s
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Oct 29, 2018
Page 5 of 15
PS9113
Notes*: 1. Typical values at TA = 25°C.
2. Test circuit for propagation delay time
(PW = 10 s,
Duty cycle = 1/10)
Input
(Monitor)
0.1 F
IF (ON)
50% IF (ON)
Input
VCC = 15 V
Pulse input (IF = 10 mA)
RL = 20 k
VO (Monitor)
CL = 100 pF
15 V
Output
VTHLH = 2.0 V
VTHHL = 1.5 V
47
tPHL
VOL
tPLH
CL includes probe and stray wiring capacitance.
3. Test circuit for common mode transient immunity
1.5 kV
VCM 90%
SW IF
0.1 F
B
A
VCC = 15 V
RL = 20 k
VO (Monitor)
CL = 100 pF
10%
0V
tr
VO
(Switch A: IF = 0 mA)
VCM
VO
(Switch B: IF = 10 mA)
tf
15 V
3.0 V
1.0 V
VOL
CL includes probe and stray wiring capacitance.
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. By-pass capacitor of 0.1 µF is used between VCC and GND near device. Also, ensure that the distance between the
leads of the photocoupler and capacitor is no more than 10 mm.
3. Avoid storage at a high temperature and high humidity.
4. Do not use adhesives or coating materials including halogens to fix this device.
R08DS0124EJ0301 Rev.3.01
Oct 29, 2018
Page 6 of 15
PS9113
TYPICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
THRESHOLD INPUT CURRENT vs.
AMBIENT TEMPERATURE
SUPPLY CURRENT vs. AMBIENT TEMPERATURE
5
ICCL
1000
Threshold Input Current IFHL (mA)
High Level Supply Current ICCH (µA)
Low Level Supply Current ICCL (µA)
1200
ICCH
800
600
400
200
0
Vcc = 20 V
Vo = Open
ICCH : VF = 0.8 V
ICCL : IF = 10 mA
-50
-25
0
25
50
75
25
50
75
100
100 °C
Output Current Io (mA)
14
12
25 °C
10
8
Ta = –40 °C
6
4
2
-50
-25
0
25
50
75
0
100
Vo = 0.6 V
0
5
10
15
20
Ambient Temperature TA (°C)
Forward Current IF (mA)
OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
PROPAGATION DELAY TIME,
PROPAGATION DELAY DIFFERENCE
vs. FORWARD CURRENT
IF = 10 mA
Vo = 0.6 V
0.90
0.80
0.70
-25
0
25
50
75
100
Ambient Temperature TA (°C)
Propagation Delay Time tPHL, tPLH (ns)
Propagation Delay Difference tPHL-tPLH (ns)
Low Level Output Voltage VOL (V)
0
16
Vcc = 15 V
IF = 10 mA
Io = 2.4 mA
1.10
Output Current (Relative Value)
-25
OUTPUT CURRENT vs. FORWARD CURRENT
0.1
Remark
1
LOW LEVEL OUTPUT VOLTAGE vs.
AMBIENT TEMPERATURE
0.2
0.60
-50
2
Ambient Temperature TA (°C)
0.3
1.00
3
Ambient Temperature TA (°C)
0.4
0
4
0
-50
100
0.6
0.5
Vcc = 15 V
Vo = 0.8 V
Io = 0.75 mA
600
tPLH
500
400
tPLH-tPHL
300
tPHL
200
Vcc = 15 V
CL = 100 pF
RL = 20 KΩ
100
0
0
5
10
15
20
25
Forward Current IF (mA)
The graphs indicate nominal characteristics.
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Oct 29, 2018
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PS9113
PROPAGATION DELAY TIME,
PULSE WIDTH DISTORTION
vs. AMBIENT TEMPERATURE
1800
Propagation Delay Time tPHL, tPLH (ns)
Pulse Width Distortion PWD (ns)
Propagation Delay Time tPHL, tPLH (ns)
Propagation Delay Difference tPHL-tPLH (ns)
PROPAGATION DELAY TIME,
PROPAGATION DELAY DIFFERENCE
vs. SUPPLY VOLTAGE
IF = 10 mA
CL = 100 pF
RL = 20 KΩ
1600
1400
1200
1000
800
600
tPLH
400
tPHL
200
0
tPLH-tPHL
0
10
20
30
600
tPLH
500
400
PWD
300
tPHL
200
100
0
-40
Supply Voltage Vcc (V)
tPLH
1000
800
tPHL
600
400
200
0
0
100
200
300
400
500
Load Capacitance CL (pF)
Propagation Delay Time tPHL, tPLH (ns)
Propagation Delay Difference tPHL-tPLH (ns)
Propagation Delay Time (ns)
1200
0
20
40
60
80
100
PROPAGATION DELAY TIME,
PROPAGATION DELAY DIFFERENCE
vs. LOAD RESISTANCE
1600
1400
-20
Ambient Temperature TA (°C)
PROPAGATION DELAY TIME
vs. LOAD CAPACITANCE
IF = 10 mA
Vcc = 15 V
RL = 20 KΩ
IF = 10 mA
Vcc = 15 V
CL = 100 pF
RL = 20 KΩ
1000
IF = 10 mA
Vcc = 15 V
CL = 100 pF
800
tPLH
600
tPLH-tPHL
400
tPHL
200
0
0
10
20
30
40
50
Load Resistance RL (KΩ)
Propagation Delay Time tPHL, tPLH (ns)
Propagation Delay Difference tTPHL-tPLH (ns)
PROPAGATION DELAY TIME,
PROPAGATION DELAY DIFFERENCE
vs. LOAD RESISTANCE
500
IF = 10 mA
Vcc = 5 V
CL = 15 pF
400
tPLH
tPLH-tPHL
300
200
tPHL
100
0
0
5
10
15
20
25
Load Resistance RL (KΩ)
Remark
The graphs indicate nominal characteristics.
R08DS0124EJ0301 Rev.3.01
Oct 29, 2018
Page 8 of 15
PS9113
TAPING SPECIFICATIONS (UNIT: mm)
Tape Direction
5pin SOP
1.55±0.1
7.4±0.1
5.5±0.1
1.5+0.1
–0
12.0±0.2
2.0±0.05
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
3.45 MAX.
3.0±0.1
3.9±0.1
8.0±0.1
0.3±0.05
Outline and Dimensions (Reel)
2.0±0.5
2.0±0.5
21.0±0.8
f 100±1.0
R 1.0
f 330±2.0
13.0±0.2
13.5±1.0
17.5±1.0
Packing: 2 500 pcs/reel
R08DS0124EJ0301 Rev.3.01
Oct 29, 2018
Page 9 of 15
PS9113
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
1.27
2.54
0.8
1.45
6.25
【5pin SOP】
R08DS0124EJ0301 Rev.3.01
Oct 29, 2018
Page 10 of 15
PS9113
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
• Time of peak reflow temperature
• Time of temperature higher than 220C
• Time to preheat temperature from 120 to 180C
• Number of reflows
• Flux
260C or below (package surface temperature)
10 seconds or less
60 seconds or less
12030 s
Three
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
Package Surface Temperature T (°C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260°C MAX.
220°C
to 60 s
180°C
120°C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
Temperature
Time
Preheating conditions
Number of times
Flux
260C or below (molten solder temperature)
10 seconds or less
120C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
Peak Temperature (lead part temperature) 350C or below
Time (each pins)
3 seconds or less
Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(b) Please be sure that the temperature of the package would not be heated over 100C
(4) Cautions
Fluxes
Avoid removing the residual flux with freon-based and halogens-based (chlorine-based) cleaning solvent .
R08DS0124EJ0301 Rev.3.01
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PS9113
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collectoremitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
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Oct 29, 2018
Page 12 of 15
PS9113
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Climatic test class (IEC 60068-1/DIN EN 60068-1)
Rating
Unit
40/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
Upr = 1.6 UIORM, Pd 5 pC
UIORM
Upr
707
1131
Vpeak
Vpeak
Upr
1 326
Vpeak
UIOTM
6 000
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 UIORM, Pd 5 pC
Highest permissible overvoltage
Degree of pollution (DIN EN 60664-1 VDE 0110 Part 1)
2
Comparative tracking index ((IEC 60112/DIN EN 60112 (VDE 0303 Part
11))
CTI
175
Tstg
–55 to +125
°C
TA
–40 to +100
°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
Tsi
Isi
Psi
150
200
300
°C
mA
mW
Ris MIN.
109
Ω
Material group (DIN EN 60664-1 VDE 0110 Part 1)
III a
Storage temperature range
Operating temperature range
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Total Power Dissipation Psi (mW)
Input Current Isi (mA)
Dependence of maximum safety ratings with package temperature
1000
900
800
700
600
500
400
Psi: Total Power Dissipation
300
200
100
Isi: Input Current
0
0
25
50
75
100
125
150
175
200
Package temp Tsi (°C)
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PS9113
Method a) Destructive Test, Type and Sample Test
UIOTM =6000V
V
Upr =1131V
UIORM =707V
t3
t1
tini
t2
tm
t4
t
ttest
t1,t2 = 1 to 10 sec
t3,t4 = 1 sec
tm(PARTIAL DISCHARGE)= 10 sec
ttest = 12 sec
tini = 60 sec
Method b) Non-destructive Test, 100% Production Test
Upr =1326V
V
UIORM =707V
ttest
t3
tm
t
t4
t3,t4 = 0.1 sec
tm(PARTIAL DISCHARGE)= 1.0 sec
ttest = 1.2 sec
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PS9113
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or i any way allow it to enter the mouth.
All trademarks and registered trademarks are the property of their respective owners.
R08DS0124EJ0301 Rev.3.01
Oct 29, 2018
Page 15 of 15
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by
you or third parties arising from the use of these circuits, software, or information.
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arising from the use of Renesas Electronics products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application
examples.
3.
4.
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Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
Room 1709 Quantum Plaza, No.27 ZhichunLu, Haidian District, Beijing, 100191 P. R. China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, 200333 P. R. China
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics India Pvt. Ltd.
No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India
Tel: +91-80-67208700, Fax: +91-80-67208777
Renesas Electronics Korea Co., Ltd.
17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5338
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