R1LP0408D Series
4Mb Advanced LPSRAM (512-kword × 8-bit)
R10DS0104EJ0200
Rev.2.00
2012.5.30
Description
The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s
high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher
performance and low power consumption. The R1LP0408D Series offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP and 32-pin TSOP.
Features
• Single 5V supply: 4.5V to 5.5V
• Access time: 55/70ns (max)
• Power dissipation:
── Standby: 4µW (typ)
• Equal access and cycle times
• Common data input and output
── Three state output
• Directly TTL compatible
── All inputs and outputs
• Battery backup operation
Part Name Information
Part Name
R1LP0408DSP-5SR#B*
R1LP0408DSP-5SI#B*
R1LP0408DSP-7SR#B*
R1LP0408DSP-7SI#B*
R1LP0408DSP-5SR#S*
R1LP0408DSP-5SI#S*
R1LP0408DSP-7SR#S*
R1LP0408DSP-7SI#S*
R1LP0408DSB-5SR#B*
R1LP0408DSB-5SI#B*
R1LP0408DSB-7SR#B*
R1LP0408DSB-7SI#B*
R1LP0408DSB-5SR#S*
R1LP0408DSB-5SI#S*
R1LP0408DSB-7SR#S*
R1LP0408DSB-7SI#S*
Access
time
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
R10DS0104EJ0200 Rev.2.00
2012.5.30
Temperature
Range
Package
Shipping
Container
Quantity
Tube
Max. 25pcs/Tube
Max. 225pcs/Inner Bag
Max. 900pcs/Inner Box
Embossed
tape
1000pcs/Reel
Tray
Max. 117pcs/Tray
Max. 936pcs/Inner Box
Embossed
tape
1000pcs/Reel
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
525-mil 32-pin
plastic SOP
PRSP0032DF-A
(032P2S-A)
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
400-mil 32-pin
plastic TSOP(II)
PTSB0032DC-A
(032PTY-A)
-40 ~ +85°C
Page 1 of 1
R1LP0408D Series
Pin Arrangement
A18
1
32
Vcc
A16
2
31
A15
A14
3
30
A17
A12
4
29
WE#
A7
5
28
A13
A6
6
27
A8
A5
7
26
A9
A4
8
25
A11
A3
9
24
OE#
A2
10
23
A10
A1
11
22
CS#
A0
12
21
I/O7
I/O0
13
20
I/O6
I/O1
14
19
I/O5
I/O2
15
18
I/O4
Vss
16
17
I/O3
32-pin SOP
32-pin TSOP
Pin Description
Pin name
Function
Vcc
Vss
A0 to A18
I/O0 to I/O7
CS#
Power supply
Ground
Address input
Data input/output
Chip select
WE#
OE#
Write enable
Output enable
R10DS0104EJ0200 Rev.2.00
2012.5.30
Page 2 of 11
R1LP0408D Series
Block Diagram
LSB
A11
A9
A8
A13
A17
A15
A18
A16
A14
A12
A7
Vcc
Vss
Row
Decoder
・
・
・
・
・
Memory Matrix
2,048 x 2,048
MSB
I/O0
・
・
Input
Data
Control
Column I/O
・
・
Column Decoder
I/O7
LSB A5 A4 A10 A0 A1 A2 A3 A6 MSB
・
・
CS#
Timing Pulse Generator
WE#
Read/Write Control
OE#
R10DS0104EJ0200 Rev.2.00
2012.5.30
Page 3 of 11
R1LP0408D Series
Operation Table
WE#
CS#
OE#
Mode
Vcc current
I/O0 to I/O7
Ref. cycle
×
H
×
Not selected
ISB, ISB1
High-Z
─
H
L
H
Output disable
Icc
High-Z
─
H
L
L
Read
Icc
Dout
Read cycle
L
L
H
Write
Icc
Din
Write cycle (1)
L
Write
Icc
Din
Write cycle (2)
L
Note 1.
L
H: VIH L:VIL
×: VIH or VIL
Absolute Maximum Ratings
Parameter
Power supply voltage relative to Vss
Terminal voltage on any pin relative to Vss
Power dissipation
Operation temperature
Storage temperature range
Storage temperature range under bias
Note
Symbol
Vcc
VT
PT
Topr*3
Value
-0.5 to +7.0
-0.5*1 to Vcc+0.3*2
0.7
R Ver.
0 to +70
I Ver.
Tstg
Tbias*3
-40 to +85
-65 to 150
R Ver.
I Ver.
unit
V
V
W
°C
°C
0 to +70
-40 to +85
°C
1. -3.0V for pulse ≤ 30ns (full width at half maximum)
2. Maximum voltage is +7.0V.
3. Ambient temperature range depends on R/I-version. Please see table on page 1.
R10DS0104EJ0200 Rev.2.00
2012.5.30
Page 4 of 11
R1LP0408D Series
DC Operating Conditions
Parameter
Supply voltage
Symbol
Min.
Typ.
Max.
Unit
Vcc
4.5
5.0
5.5
V
Vss
0
0
0
V
Note
Input high voltage
VIH
2.2
─
Vcc+0.3
V
Input low voltage
VIL
-0.3
─
0.8
V
1
0
─
+70
°C
2
-40
─
+85
°C
2
R Ver.
Ambient temperature range
Note
Ta
I Ver.
1. -3.0V for pulse ≤ 30ns (full width at half maximum)
2. Ambient temperature range depends on R/I-version. Please see table on page 1.
DC Characteristics
Parameter
Input leakage current
Symbol
Min.
Typ.
Max.
Unit
| ILI |
─
─
1
μA
| ILO |
─
─
1
μA
Icc
─
5*1
10
mA
ICC1
─
15*1
25
mA
ICC2
─
3*1
5
mA
ISB
─
0.1*1
0.5
mA
─
0.8*1
2.5
μA
~+25°C
─
1*2
3
μA
~+40°C
─
─
8
μA
~+70°C
─
─
10
μA
~+85°C
VOH
2.4
─
─
V
IOH = -1mA
VOH2
Vcc-0.5
─
─
V
IOH = -0.1mA
VOL
─
─
0.4
V
IOL = 2.1mA
Output leakage current
Operating current
Average operating current
Standby current
Standby current
Test conditions
Vin = Vss to Vcc
CS# =VIH or OE# =VIH,
VI/O =Vss to Vcc
CS# =VIL,
Others = VIH/VIL, II/O = 0mA
Min. cycle, duty =100%, II/O = 0mA
CS# =VIL, Others = VIH/VIL
Cycle =1μs, duty =100%, II/O = 0mA
CS# ≤ 0.2V,
VIH ≥ Vcc-0.2V, VIL ≤ 0.2V
CS# =VIH,
Others = Vss to Vcc
Vin = Vss to Vcc,
CS# ≥ Vcc-0.2V
ISB1
Output high voltage
Output low voltage
Note
1. Typical parameter indicates the value for the center of distribution at 5.0V (Ta=25ºC), and not 100% tested.
2. Typical parameter indicates the value for the center of distribution at 5.0V (Ta=40ºC), and not 100% tested.
Capacitance
(Vcc = 4.5V ~ 5.5V, f = 1MHz, Ta = 0 ~ +70°C / -40 ~ +85°C*2)
Parameter
Input capacitance
Input / output capacitance
Note
Symbol
C in
C I/O
Min.
─
─
Typ.
─
─
Max.
8
10
Unit
pF
pF
Test conditions
Vin =0V
VI/O =0V
Note
1
1
1. This parameter is sampled and not 100% tested.
2. Ambient temperature range depends on R/I-version. Please see table on page 1.
R10DS0104EJ0200 Rev.2.00
2012.5.30
Page 5 of 11
R1LP0408D Series
AC Characteristics
Test Conditions (Vcc = 4.5V ~ 5.5V, Ta = 0 ~ +70°C / -40 ~ +85°C*1)
•
•
•
•
Input pulse levels: VIL = 0.4V, VIH = 2.4V
Input rise and fall time: 5ns
Input and output timing reference level: 1.5V
Output load: See figures (Including scope and jig)
1.5V
RL = 500 ohm
I/O
CL = 50 pF
( -5SI, -5SR)
CL = 100 pF ( -7SI, -7SR)
Note
1. Ambient temperature range depends on R/I-version. Please see table on page 1.
R10DS0104EJ0200 Rev.2.00
2012.5.30
Page 6 of 11
R1LP0408D Series
Read Cycle
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Chip select to output in low-Z
Output enable to output in low-Z
Chip deselect to output in high-Z
Output disable to output in high-Z
Output hold from address change
Symbol
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
R1LP0408DS*-5S*
R1LP0408DS*-7S*
Min.
55
─
─
─
10
5
0
0
10
Min.
70
─
─
─
10
5
0
0
10
Max.
─
55
55
25
─
─
20
20
─
Max.
─
70
70
35
─
─
25
25
─
Unit
Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
1,2
1,2
Write Cycle
Parameter
Symbol
R1LP0408DS*-5S*
R1LP0408DS*-7S*
Max.
─
─
─
Min.
70
60
0
Max.
─
─
─
─
─
─
20
─
─
─
20
60
50
0
0
30
0
5
0
─
─
─
25
─
─
─
25
Write cycle time
Chip select to end of write
Address setup time
tWC
tCW
tAS
Min.
55
50
0
Address valid to end of write
Write pulse width
Write recovery time
Write to output in high-Z
Data to write time overlap
Data hold from write time
Output enable from end of write
Output disable to output in high-Z
tAW
tWP
tWR
tWHZ
tDW
tDH
tOW
tOHZ
50
40
0
0
25
0
5
0
Note
Unit
Note
ns
ns
ns
4
5
ns
ns
ns
ns
ns
ns
ns
ns
3,12
6
1,2,7
2
1,2,7
1. tCHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit conditions and are not
referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. A write occurs during the overlap (tWP) of a low CS# and a low WE#.
A write begins at the later transition of CS# going low or WE# going low.
A write ends at the earlier transition of CS# going high or WE# going high.
tWP is measured from the beginning of write to the end of write.
4. tCW is measured from CS# going low to end of write.
5. tAS is measured the address valid to the beginning of write.
6. tWR is measured from the earlier of WE# or CS# going high to the end of write cycle.
7. During this period, I/O pins are in the output state so that the input signals of the opposite phase to the
outputs must not be applied.
8. If the CS# low transition occurs simultaneously with the WE# low transition or after the WE# transition, the
output remain in a high impedance state.
9. Dout is the same phase of the write data of this write cycle.
10. Dout is the read data of next address.
11. If CS# is low during this period, I/O pins are in the output state. Therefore, the input signals of the opposite
phase to the outputs must not be applied to them.
12. In the write cycle with OE# low fixed, tWP must satisfy the following equation to avoid a problem of data bus
contention.
tWP ≥ tDW min + tWHZ max
R10DS0104EJ0200 Rev.2.00
2012.5.30
Page 7 of 11
R1LP0408D Series
Timing Waveforms
Read Cycle (WE# = VIH )
tRC
Valid address
Address
tAA
tACS
CS#
tCLZ
tCHZ
tOE
tOLZ
OE#
tOHZ
Dout
High impedance
Valid Data
tOH
R10DS0104EJ0200 Rev.2.00
2012.5.30
Page 8 of 11
R1LP0408D Series
Write Cycle (1) (OE# CLOCK)
tWC
Valid address
Address
tWR
tAW
OE#
tCW
CS#
tAS
*8
tWP
WE#
tOHZ
Dout
High impedance
tDW
Din
R10DS0104EJ0200 Rev.2.00
2012.5.30
tDH
Valid Data
Page 9 of 11
R1LP0408D Series
Write Cycle (2) (OE# Low Fixed)
tWC
Valid address
Address
tCW
tWR
CS#
*8
tAW
tWP
WE#
tOH
tAS
tWHZ
tOW
*9
Dout
*10
High impedance
tDW
tDH
*11
Din
R10DS0104EJ0200 Rev.2.00
2012.5.30
Valid Data
Page 10 of 11
R1LP0408D Series
Low Vcc Data Retention Characteristics
Test conditions*3
Parameter
Symbol
Min.
Typ.
Max.
Unit
VCC for data retention
VDR
2.0
─
5.5
V
Vin ≥ 0V,
CS# ≥ Vcc-0.2V
─
0.8*1
2.5
μA
~+25°C
─
1*2
3
μA
~+40°C
─
─
8
μA
~+70°C
─
─
10
μA
~+85°C
Data retention current
ICCDR
Vcc=3.0V, Vin ≥ 0V,
CS# ≥ Vcc-0.2V
Chip deselect time to data retention
tCDR
0
─
─
ns
See retention waveform.
Operation recovery time
tR
5
─
─
ms
Note 1. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=25ºC), and not 100% tested.
2. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=40ºC), and not 100% tested.
3. CS# controls address buffer, WE# buffer, OE# buffer and Din buffer. If data retention mode, Vin levels
(address, WE#, OE#, I/O) can be in the high impedance state.
Low Vcc Data Retention Timing Waveforms
CS# Controlled
Vcc
tCDR
2.2V
4.5V
4.5V
VDR
tR
2.2V
CS# ≥ Vcc - 0.2V
CS#
R10DS0104EJ0200 Rev.2.00
2012.5.30
Page 11 of 11
Revision History
R1LP0408D Series Data Sheet
Rev.
Date
Page
1.00
2.00
2012.4.13
2012.5.30
─
P.1
Description
Summary
First Edition issued (SOP package)
Add TSOP package to Part Name Information
All trademarks and registered trademarks are the property of their respective owners.
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
Colophon 2.0