R1LV0416CSB-7LI#S0

R1LV0416C-I Series Wide Temperature Range Version 4M SRAM (256-kword × 16-bit) REJ03C0105-0200Z Rev. 2.00 May.26.2004 Description The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II. Features • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V • Fast access time: 55/70 ns (max) • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V) • Completely static memory.  No clock or timing strobe required • Equal access and cycle times • Common data input and output.  Three state output • Battery backup operation.  2 chip selection for battery backup • Temperature range: −40 to +85°C Rev.2.00, May.26.2004, page 1 of 16 R1LV0416C-I Series Ordering Information Type No. Access time Package R1LV0416CSB-5SI 55 ns 400-mil 44-pin plastic TSOP II (44P3W-H) R1LV0416CSB-7LI 70 ns Rev.2.00, May.26.2004, page 2 of 16 R1LV0416C-I Series Pin Arrangement 44-pin TSOP A4 A3 A2 A1 A0 CS1# I/O0 I/O1 I/O2 I/O3 V CC V SS I/O4 I/O5 I/O6 I/O7 WE# A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 (Top view) Pin Description Pin name Function A0 to A17 Address input I/O0 to I/O15 Data input/output CS1# (CS1) Chip select 1 CS2 Chip select 2 OE# (OE) Output enable WE# (WE) Write enable LB# (LB) Lower byte select UB# (UB) Upper byte select VCC Power supply VSS Ground Rev.2.00, May.26.2004, page 3 of 16 A5 A6 A7 OE# UB# LB# I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 CS2 A8 A9 A10 A11 A12 R1LV0416C-I Series Block Diagram LSB A12 V CC A11 V SS A10 A9 A8 A13 A14 A15 A16 A17 MSB A7 Row decoder I/O0 • • • • • Memory matrix 2,048 x 2,048 Column I/O • • Input data control Column decoder I/O15 LSB A4 A3 A2 A1 A5 A6 A0 MSB • • CS2 CS1# LB# UB# WE# OE# Rev.2.00, May.26.2004, page 4 of 16 Control logic • • R1LV0416C-I Series Operation Table CS1# CS2 WE# OE# UB# LB# I/O0 to I/O7 I/O8 to I/O15 Operation H × × × × × High-Z High-Z Standby × L × × × × High-Z High-Z Standby × × × × H H High-Z High-Z Standby L H H L L L Dout Dout Read L H H L H L Dout High-Z Lower byte read L H H L L H High-Z Dout Upper byte read L H L × L L Din Din Write L H L × H L Din High-Z Lower byte write L H L × L H High-Z Din Upper byte write L H H H × × High-Z High-Z Output disable Note: H: VIH, L: VIL, ×: VIH or VIL Absolute Maximum Ratings Parameter Symbol Value Unit Power supply voltage relative to VSS VCC −0.5 to +4.6 V Terminal voltage on any pin relative to VSS VT −0.5*1 to VCC + 0.3*2 V Power dissipation PT 0.7 W Operating temperature Topr −40 to +85 °C Storage temperature range Tstg −65 to +150 °C Storage temperature range under bias Tbias −40 to +85 °C Notes: 1. VT min: −3.0 V for pulse half-width ≤ 30 ns. 2. Maximum voltage is +4.6 V. DC Operating Conditions (Ta = −40 to +85°C) Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.2 2.5/3.0 3.6 V VSS 0 0 0 V 2.0  VCC + 0.3 V Input high voltage Input low voltage Note: VCC = 2.2 V to 2.7 V VIH Note VCC = 2.7 V to 3.6 V VIH 2.2  VCC + 0.3 V VCC = 2.2 V to 2.7 V VIL −0.2  0.4 V 1 VCC = 2.7 V to 3.6 V VIL −0.3  0.6 V 1 1. VIL min: −3.0 V for pulse half-width ≤ 30 ns. Rev.2.00, May.26.2004, page 5 of 16 R1LV0416C-I Series DC Characteristics Parameter Symbol Min Typ Max Unit Test conditions Input leakage current |ILI| Output leakage current |ILO|   1 µA Vin = VSS to VCC   1 µA CS1# = VIH or CS2 = VIL or OE# = VIH or WE# = VIL or LB# = UB# = VIH, VI/O = VSS to VCC Operating current ICC  5*1 20 mA CS1# = VIL, CS2 = VIH, Others = VIH/VIL, II/O = 0 mA Average operating current ICC1  8*1 25 mA Min. cycle, duty = 100%, II/O = 0 mA, CS1# = VIL, CS2 = VIH, Others = VIH/VIL ICC2  2*1 5 mA Cycle time = 1 µs, duty = 100%, II/O = 0 mA, CS1# ≤ 0.2 V, CS2 ≥ VCC − 0.2 V VIH ≥ VCC − 0.2 V, VIL ≤ 0.2 V ISB  0.1*1 0.3 mA CS2 = VIL to +85°C ISB1   10 µA Vin ≥ 0 V to +70°C ISB1   Standby current Standby current −5SI to +40°C −7LI ISB1  8 µA (1) 0 V ≤ CS2 ≤ 0.2 V or 2 3 µA (2) CS1# ≥ VCC − 0.2 V, 1 CS2 ≥ VCC − 0.2 V or 0.7* to +25°C ISB1  0.5* 3 µA to +85°C ISB1   20 µA to +70°C ISB1   to +40°C ISB1  (3) LB# = UB# ≥ VCC − 0.2 V, 16 µA CS2 ≥ VCC − 0.2 V, 2 10 µA CS1# ≤ 0.2 V 1 0.7*  0.5* 10 µA VCC =2.2 V to 2.7 V VOH 2.0 — — V IOH = −0.5 mA VCC =2.7 V to 3.6 V VOH 2.4 — — V IOH = −1 mA VCC =2.2 V to 3.6 V VOH2 VCC − 0.2 — — V IOH = −100 µA Output low voltage VCC =2.2 V to 2.7 V VOL — — 0.4 V IOL = 0.5 mA VCC =2.7 V to 3.6 V VOL — — 0.4 V IOL = 2 mA VCC =2.2 V to 3.6 V VOL2 — — 0.2 V IOL = 100 µA to +25°C Output high voltage ISB1 Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed. 2. Typical values are at VCC = 3.0 V, Ta = +40°C and specified loading, and not guaranteed. Rev.2.00, May.26.2004, page 6 of 16 R1LV0416C-I Series Capacitance (Ta = +25°C, f = 1.0 MHz) Parameter Symbol Min Typ Max Unit Test conditions Note Input capacitance Cin   8 pF Vin = 0 V 1 Input/output capacitance CI/O   10 pF VI/O = 0 V 1 Note: 1. This parameter is sampled and not 100% tested. AC Characteristics (Ta = −40 to +85°C, VCC = 2.2 V to 3.6 V, unless otherwise noted.) Test Conditions • Input pulse levels: VIL = 0.4 V, VIH = 2.2 V (VCC = 2.2 V to 2.7 V) : VIL = 0.4 V, VIH = 2.4 V (VCC = 2.7 V to 3.6 V) • Input rise and fall time: 5 ns • Input/output timing reference levels: 1.1 V (VCC = 2.2 V to 2.7 V) : 1.4 V (VCC = 2.7 V to 3.6 V) • Output load: See figures (Including scope and jig) VTM 1.4 V R1 RL=500 Ω Dout R1 = 3070 Ω 30pF R2 Output load (A) (VCC = 2.2 V to 2.7 V) Rev.2.00, May.26.2004, page 7 of 16 R2 = 3150 Ω VTM = 2.3 V Dout 50pF Output load (B) (VCC = 2.7 V to 3.6 V) R1LV0416C-I Series Read Cycle R1LV0416C-I -5SI -7LI Parameter Symbol Min Max Min Max Unit Notes Read cycle time tRC 55  70  ns Address access time tAA  55  70 ns Chip select access time tACS1  55  70 ns tACS2  55  70 ns Output enable to output valid tOE  35  40 ns Output hold from address change tOH 10  10  ns LB#, UB# access time tBA  55  70 ns Chip select to output in low-Z tCLZ1 10  10  ns 2, 3 tCLZ2 10  10  ns 2, 3 LB#, UB# disable to low-Z tBLZ 5  5  ns 2, 3 Output enable to output in low-Z tOLZ 5  5  ns 2, 3 Chip deselect to output in high-Z tCHZ1 0 20 0 25 ns 1, 2, 3 tCHZ2 0 20 0 25 ns 1, 2, 3 LB#, UB# disable to high-Z tBHZ 0 20 0 25 ns 1, 2, 3 Output disable to output in high-Z tOHZ 0 20 0 25 ns 1, 2, 3 Rev.2.00, May.26.2004, page 8 of 16 R1LV0416C-I Series Write Cycle R1LV0416C-I -5SI -7LI Parameter Symbol Min Max Min Max Unit Notes Write cycle time tWC 55  70  ns Address valid to end of write tAW 50  60  ns Chip selection to end of write tCW 50  60  ns 5 Write pulse width tWP 40  50  ns 4 LB#, UB# valid to end of write tBW 50  55  ns Address setup time tAS 0  0  ns 6 Write recovery time tWR 0  0  ns 7 Data to write time overlap tDW 25  30  ns Data hold from write time tDH 0  0  ns Output active from end of write tOW 5  5  ns 2 Output disable to output in high-Z tOHZ 0 20 0 25 ns 1, 2, 3 Write to output in high-Z tWHZ 0 20 0 25 ns 1, 2 Notes: 1. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. At any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and from device to device. 4. A write occures during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#. A write begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB# going low or UB# going low. A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and LB# going high or UB# going high. tWP is measured from the beginning of write to the end of write. 5. tCW is measured from the later of CS1# going low or CS2 going high to the end of write. 6. tAS is measured from the address valid to the beginning of write. 7. tWR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle. Rev.2.00, May.26.2004, page 9 of 16 R1LV0416C-I Series Timing Waveform Read Timing Waveform (WE# = VIH) t RC Address Valid address tAA tACS1 CS1# tCLZ1*2, 3 CS2 tCHZ1*1, 2, 3 tACS2 tCLZ2*2, 3 tCHZ2*1, 2, 3 tBHZ*1, 2, 3 tBA LB#, UB# tBLZ*2, 3 tOHZ*1, 2, 3 tOE OE# tOLZ*2, 3 Dout High impedance Rev.2.00, May.26.2004, page 10 of 16 tOH Valid data R1LV0416C-I Series Write Timing Waveform (1) (WE# Clock) tWC Valid address Address tWR*7 tCW*5 CS1# tCW*5 CS2 tBW LB#, UB# tAW tWP*4 WE# tAS*6 tDW tDH Valid data Din tWHZ*1, 2 tOW*2 High impedance Dout Rev.2.00, May.26.2004, page 11 of 16 R1LV0416C-I Series Write Timing Waveform (2) (CS# Clock, OE# = VIH) tWC Valid address Address tAW tAS *6 tWR*7 tCW*5 CS1# tCW*5 CS2 tBW LB#, UB# tWP*4 WE# tDW Valid data Din High impedance Dout Rev.2.00, May.26.2004, page 12 of 16 tDH R1LV0416C-I Series Write Timing Waveform (3) (LB#, UB# Clock, OE# = VIH) tWC Valid address Address tAW tCW*5 tWR*7 CS1# tCW*5 CS2 tAS*6 tBW LB#, UB# tWP*4 WE# tDW Valid data Din High impedance Dout Rev.2.00, May.26.2004, page 13 of 16 tDH R1LV0416C-I Series Low VCC Data Retention Characteristics (Ta = −40 to +85°C) Max Unit Test conditions*3 Parameter Symbol Min Typ VCC for data retention VDR 2.0   V Vin ≥ 0V (1) 0 V ≤ CS2 ≤ 0.2 V or (2) CS2 ≥ VCC − 0.2 V, CS1# ≥ VCC − 0.2 V or (3) LB# = UB# ≥ VCC − 0.2 V, CS2 ≥ VCC − 0.2 V, CS1# ≤ 0.2 V to +85°C ICCDR   10 µA to +70°C ICCDR   8 µA to +40°C ICCDR  0.7*2 3 µA VCC = 3.0 V, Vin ≥ 0V (1) 0 V ≤ CS2 ≤ 0.2 V or (2) CS2 ≥ VCC − 0.2 V, CS1# ≥ VCC − 0.2 V or (3) LB# = UB# ≥ VCC − 0.2 V, CS2 ≥ VCC − 0.2 V, CS1# ≤ 0.2 V Data retention current −5SI −7LI to +25°C ICCDR  0.5* to +85°C ICCDR   to +70°C ICCDR   to +40°C to +25°C ICCDR ICCDR 1 3 µA 20 µA 16 µA 0.7* 2 10 µA  0.5* 1 10 µA  Chip deselect to data retention time tCDR 0   ns Operation recovery time tR tRC*4   ns See retention waveform Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed. 2. Typical values are at VCC = 3.0 V, Ta = +40°C and specified loading, and not guaranteed. 3. CS2 controls address buffer, WE# buffer, CS1# buffer, OE# buffer, LB#, UB# buffer and Din buffer. If CS2 controls data retention mode, Vin levels (address, WE#, OE#, CS1#, LB#, UB#, I/O) can be in the high impedance state. If CS1# controls data retention mode, CS2 must be CS2 ≥ VCC − 0.2 V or 0 V ≤ CS2 ≤ 0.2 V. The other input levels (address, WE#, OE#, LB#, UB#, I/O) can be in the high impedance state. 4. tRC = read cycle time. Rev.2.00, May.26.2004, page 14 of 16 R1LV0416C-I Series Low VCC Data Retention Timing Waveform (1) (CS1# Controlled) (VCC = 2.2 V to 2.7 V) t CDR Data retention mode tR V CC 2.2 V V DR 2.0 V CS1# ≥ VCC – 0.2 V CS1# 0V Low VCC Data Retention Timing Waveform (2) (CS1# Controlled) (VCC = 2.7 V to 3.6 V) t CDR Data retention mode tR V CC 2.7 V 2.2 V V DR CS1# ≥ VCC – 0.2 V CS1# 0V Low VCC Data Retention Timing Waveform (3) (CS2 Controlled) (VCC = 2.2 V to 2.7 V) t CDR Data retention mode V CC 2.2 V CS2 V DR 0.4 V 0V Rev.2.00, May.26.2004, page 15 of 16 0 V < CS2 < 0.2 V tR R1LV0416C-I Series Low VCC Data Retention Timing Waveform (4) (CS2 Controlled) (VCC = 2.7 V to 3.6 V) t CDR Data retention mode tR V CC 2.7 V CS2 V DR 0.6 V 0 V < CS2 < 0.2 V 0V Low VCC Data Retention Timing Waveform (5) (LB#, UB# Controlled) (VCC = 2.2 V to 2.7 V) t CDR Data retention mode tR V CC 2.2 V V DR 2.0 V LB#, UB# ≥ VCC – 0.2 V LB#, UB# 0V Low VCC Data Retention Timing Waveform (6) (LB#, UB# Controlled) (VCC = 2.7 V to 3.6 V) t CDR Data retention mode V CC 2.7 V 2.2 V V DR LB#, UB# 0V Rev.2.00, May.26.2004, page 16 of 16 LB#, UB# ≥ VCC – 0.2 V tR Revision History Rev. Date R1LV0416C-I Series Data Sheet Contents of Modification Page Description 1.00 Aug.05.2003  Initial issue 2.00 May.26.2004 5 Absolute Maximum Ratings Notes 2 : +7.0 V to +4.6 V 6 DC characteristics −5SI and −7LI items’ description are divided. 7 8 AC characteristics Read Cycle/Notes: tCLZ1/tCLZ2/tBLZ/tOLZ : Addition of [2, 3] tCHZ1/tCHZ2/tBHZ/tOHZ : Addition of [1, 2, 3] Write Cycle/Notes: tOHZ : Addition of [1, 2, 3] 9 14 Low VCC Data Retention Characteristics −5SI and −7LI items’ description are divided. Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500 Fax: (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: (1628) 585 100, Fax: (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: (89) 380 70 0, Fax: (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: 2265-6688, Fax: 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0