R1WV3216RSD-8SR

R1W V3216R Series 32Mb Advanced LPSRAM (2M wordx16bit) REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit Advanced LPSRAMs are assembled in one package. The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features • Single 2.7-3.6V power supply • Small stand-by current:4µA (3.0V, typ.) • Data retention supply voltage =2.0V • No clocks, No refresh • All inputs and outputs are TTL compatible. • Easy memory expansion by CS1#, CS2, LB# and UB# • Common Data I/O • Three-state outputs: OR-tie capability • OE# prevents data contention on the I/O bus • Process technology: 0.15um CMOS REJ03C0215-0300Z Rev.3.00 2008.03.03 page 1 of 15 R1W V3216R Series Ordering Information Type No. R1WV3216RSD-7S% R1WV3216RSD-8S% R1WV3216RBG-7S% R1WV3216RBG-8S% Access time 70 ns 85 ns 70 ns 7.5mmx8.5mm f-BGA 0.75mm pitch 48ball 85 ns % - Temperature version; see table below % R I Temperature Range 0 ~ +70 ºC -40 ~ +85 ºC Package 350-mil 52-pin plastic µ - TSOP(II) (normal-bend type) (52PTG) REJ03C0215-0300Z Rev.3.00 2008.03.03 page 2 of 15 R1W V3216R Series Pin Arrangement 52-pin µTSOP A15 A14 A13 A12 A11 A10 A9 A8 A19 CS1# WE# NC NC Vcc CS2 NC A20 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 A16 BYTE# UB# Vss LB# DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 NC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss NC A0 48-pin fBGA 1 A B C D E F G H LB# 2 OE# 3 A0 A3 A5 A17 Vss or NC 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CS1# 6 CS2 DQ0 DQ15 UB# DQ13 DQ14 DQ1 DQ2 Vss Vcc DQ10 DQ12 DQ3 Vcc Vss DQ5 DQ11 DQ4 DQ9 A19 A8 A14 A12 A9 DQ6 DQ8 WE# A11 DQ7 A18 A20 (Top view) Pin Description Pin name A0 to A20 A-1 to A20 DQ 0 to DQ15 CS1# &CS2 WE# OE# LB# UB# Vcc Vss BYTE# NC Note: Byte Mode is supported by only 52-pin µTSOP type. Function Address input (Word mode) Address input (Byte mode) Data input/output Chip select Write enable Output enable Lower byte select Upper byte select Power supply Ground Byte (x8 mode) enable input Non connection REJ03C0215-0300Z Rev.3.00 2008.03.03 page 3 of 15 R1W V3216R Series Block Diagram SENSE Amp. ADDRESS BUFFER A0 Memory Array DECODER SENSE Amp. A20 CS2 CS1# LB# UB# BYTE# WE# OE# OUTPUT BUFFER 1048576 Words x 16BITS OR 2097152 Words x 8BITS CLOCK GENERATOR DATA SELECTOR OUTPUT BUFFER DQ0 DQ7 DQ8 DQ15 / A-1 DATA SELECTOR DATA INPUT BUFFER Vcc Vss 16Mb Advanced LPSRAM #1 16Mb Advanced LPSRAM #2 Note: BYTE# pin is supported by only 52-pin µTSOP type. REJ03C0215-0300Z Rev.3.00 2008.03.03 page 4 of 15 DATA INPUT BUFFER x8/x16 SWITCHING CIRCUIT R1W V3216R Series Operating Table CS1# H X X L L L L L L L L L CS2 X L X H H H H H H H H H BYTE# X X H H H X H H H H L L LB# X X H L L X H H L L L L UB# X X H H H X L L L L L L WE# X X X L H H L H L H L H OE# X X X X L H X L X L X L DQ0-7 High-Z High-Z High-Z Din Dout High-Z High-Z High-Z Din Dout Din Dout DQ8-14 High-Z High-Z High-Z High-Z High-Z High-Z Din Dout Din Dout High-Z High-Z DQ15 High-Z High-Z High-Z High-Z High-Z High-Z Din Dout Din Dout A-1 A-1 Operation Stand by Stand by Stand by Write in lower byte Read from lower byte Output disable Write in upper byte Read from upper byte Write Read Write Read Note 1. H:VIH L:VIL X: VIH or VIL 2. BYTE# pin is supported by only 52-pin µTSOP type. When apply BYTE# =“L” , please assign LB#=UB#=“L”. Absolute Maximum Ratings Parameter Power supply voltage relative to Vss Terminal voltage on any pin relation toVss Power dissipation Operation temperature Storage temperature Storage temperature range under bias Symbol Vcc VT PT R ver. *3 Topr I ver. *3 Tstg R ver. *3 Tbias I ver. *3 Value -0.5 to +4.6 -0.5*1 to Vcc+0.3*2 0.7 0 to +70 -40 to +85 -65 to +150 0 to +70 -40 to +85 Unit V V W ºC ºC ºC ºC ºC Note 1: -2.0V in case of AC (Pulse width ≤ 30ns) 2: Maximum voltage is +4.6V 3: Temperature range depends on R/I-version. Please see table on page 2. REJ03C0215-0300Z Rev.3.00 2008.03.03 page 5 of 15 R1W V3216R Series Recommended Operating Conditions Parameter Supply voltage Input high voltage Input low voltage Ambient temperature range R ver. I ver. Symbol Vcc Vss VIH VIL Ta Min. 2.7 0 2.4 -0.2 0 -40 Typ. 3.0 0 - Max. 3.6 0 Vcc+0.2 0.4 +70 +85 Unit V V V V ºC ºC Note 1 2 2 Note 1. –2.0V in case of AC (Pulse width ≤ 30ns) 2. Ambient temperature range depends on R/I-version. Please see table on page 2. DC Characteristics Parameter Input leakage current Symbol |ILI| |ILo| Min. - Typ. - Max. 1 Unit µA Test conditions*3 Vin=Vss to Vcc BYTE# ≥Vcc-0.2V or BYTE# ≤ 0.2V, CS1# =VIH or CS2=VIL or OE# = VIH or WE# =VIL or LB# =UB# =VIH,VI/O=Vss to Vcc BYTE# ≥Vcc-0.2V or BYTE# ≤ 0.2V, Min. cycle, duty =100% I I/O = 0 mA, CS1# =VIL, CS2=VIH Others = VIH / VIL BYTE# ≥Vcc-0.2V or BYTE# ≤ 0.2V, Output leakage current - - 1 µA Icc1 Average operating current - 30 *1 55 mA Icc2 - 3 *1 8 mA Cycle time = 1 µs, I I/O = 0 mA, CS1#≤ 0.2V, CS2 ≥ VCC-0.2V VIH ≥ VCC-0.2V , VIL ≤ 0.2V, duty=100% BYTE# ≥Vcc-0.2V or BYTE#≤0.2V, CS2=VIL Standby current ISB - 0.1 *1 4 *1 7 *2 - 0.3 12 24 50 80 0.4 mA µA µA µA µA V V ~+25ºC V in ≥ 0V, ~+40ºC ~+70ºC ~+85ºC Standby current ISB1 - BYTE# ≥Vcc-0.2V or BYTE#≤0.2V, (1) 0V≤CS2≤0.2V or (2) CS2≥Vcc-0.2V, CS1# ≥Vcc-0.2V or (3)LB# =UB# ≥Vcc-0.2V, CS2≥Vcc-0.2V, CS1# ≤0.2V Average value Output high voltage Output Low voltage VOH VOL 2.4 - BYTE# ≥Vcc-0.2V or BYTE#≤0.2V, IOH = -1mA BYTE# ≥Vcc-0.2V or BYTE#≤0.2V, IOL = 2mA Note 1. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 25ºC), and not 100% tested. 2. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 40ºC), and not 100% tested. 3. BYTE# pin is supported by only 52-pin µTSOP type. REJ03C0215-0300Z Rev.3.00 2008.03.03 page 6 of 15 R1W V3216R Series Capacitance (Ta = +25ºC, f =1MHz) Parameter Input capacitance Input / output capacitance Symbol C in C I/O Min. - Typ. - Max. 20 20 Unit pF pF Test conditions V in = 0V V I/O = 0V Note 1 1 Note 1. This parameter is sampled and not 100% tested. AC Characteristics Test Conditions (Vcc=2.7~3.6V, Ta = 0~+70ºC / -40~+85ºC *) • Input pulse levels: VIL= 0.4V,VIH=2.4V • Input rise and fall time : 5ns • Input and output timing reference levels : 1.4V • Output load : See figures (Including scope and jig) 1.4V RL=500Ω DQ CL=30pF Note: Temperature range depends on R/I-version. Please see table on page 2. REJ03C0215-0300Z Rev.3.00 2008.03.03 page 7 of 15 R1W V3216R Series Read Cycle Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change LB#,UB# access time Chip select to output in low-Z LB#,UB# enable to low-Z Output enable to output in low-Z Chip deselect to output in high-Z LB#,UB# disable to high-Z Output disable to output in high-Z Symbol R1WV3216R**-7S Min. Max. 70 10 10 5 5 0 0 0 0 70 70 70 35 70 25 25 25 25 R1WV3216R**-8S Min. Max. 85 10 10 5 5 0 0 0 0 85 85 85 45 85 30 30 30 30 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns 2,3 2,3 2,3 1,2,3 1,2,3 1,2,3 1,2,3 Notes tRC tAA tACS1 tACS2 tOE tOH tBA tCLZ tBLZ tOLZ tCHZ1 tCHZ2 tBHZ tOHZ REJ03C0215-0300Z Rev.3.00 2008.03.03 page 8 of 15 R1W V3216R Series Write Cycle Parameter Write cycle time Address valid to end of write Chip selection to end of write Write pulse width LB#,UB# valid to end of write Address setup time Write recovery time Data to write time overlap Data hold from write time Output active from end of write Output disable to output in high-Z Write to output in high-Z Symbol R1WV3216R**-7S Min. Max. 70 65 65 55 65 0 0 35 0 5 0 0 25 25 R1WV3216R**-8S Min. Max. 85 70 70 60 70 0 0 40 0 5 0 0 30 30 Unit ns ns ns ns ns ns ns ns ns ns ns ns 2 1,2 1,2 6 7 5 4 Notes tWC tAW tCW tWP tBW tAS tWR tDW tDH tOW tOHZ tWHZ Byte Enable (supported by only 52-pin µTSOP ) Parameter Byte setup time Byte recovery time Symbol R1WV3216R**-7S Min. Max. 5 5 R1WV3216R**-8S Min. Max. 5 5 Unit ms ms Notes tBS tBR Note 1. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. AT any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and form device to device. 4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#. A write begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB# going low or UB# going low . A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and LB# going high or UB# going high. tWP is measured from the beginning of write to the end of write. 5. tCW is measured from the later of CS1# going low or CS2 going high to end of write. 6. tAS is measured the address valid to the beginning of write. 7. tWR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle. REJ03C0215-0300Z Rev.3.00 2008.03.03 page 9 of 15 R1W V3216R Series Timing Waveform Read Timing Waveform A0~20 (Word Mode) tRC Valid address A-1~20 (Byte Mode) tAA tBA tOH LB#,UB# tBHZ CS1# tACS1 tCHZ1 CS2 tACS2 tCHZ2 tOE OE# WE# = "H" level tOLZ tCLZ tBLZ tOHZ Valid data DQ0~15 (Word Mode) DQ0~7 (Byte Mode) Note: Byte Mode is supported by only 52-pin µTSOP type. BYTE# ≥ Vcc-0.2V or BYTE# ≤ 0.2V REJ03C0215-0300Z Rev.3.00 2008.03.03 page 10 of 15 R1W V3216R Series Write Timing Waveform (1) (WE# CLOCK) tWC A 0~20 (Word Mode) A -1~20 (Byte Mode) Valid address tBW tCW tCW tAW tAS tWP tWHZ tOW tWR LB#,UB# CS1# CS2 WE# DQ0~15 (Word Mode) tDW tDH DQ0~7 (Byte Mode) Valid data Note: Byte Mode is supported by only 52-pin µTSOP type. BYTE# ≥ Vcc-0.2V or BYTE# ≤ 0.2V REJ03C0215-0300Z Rev.3.00 2008.03.03 page 11 of 15 R1W V3216R Series Write Timing Waveform (2) (CS1#, CS2 CLOCK, OE#=VIH) tWC A0~20 (Word Mode) A-1~20 (Byte Mode) Valid address tBW LB#,UB# CS1# tAS CS2 tCW tCW tWP tDW tWR WE# DQ0~15 (Word Mode) tDH DQ0~7 (Byte Mode) Valid data Note: Byte Mode is supported by only 52-pin µTSOP type. BYTE# ≥ Vcc-0.2V or BYTE# ≤ 0.2V REJ03C0215-0300Z Rev.3.00 2008.03.03 page 12 of 15 R1W V3216R Series Write Timing Waveform (3) (LB#,UB# CLOCK, OE#=VIH) tWC A0~20 (Word Mode) A-1~20 (Byte Mode) Valid address tAS tBW tWR LB#,UB# CS1# tCW tCW CS2 WE# tWP tDW tDH DQ0~15 (Word Mode) DQ0~7 (Byte Mode) Valid data Note: Byte Mode is supported by only 52-pin µTSOP type. BYTE# ≥ Vcc-0.2V or BYTE# ≤ 0.2V BYTE# Timing Waveform CS2 CS1# tBS BYTE# tBR REJ03C0215-0300Z Rev.3.00 2008.03.03 page 13 of 15 R1W V3216R Series Data Retention Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions*3,4 V in ≥ 0V, BYTE#≥Vcc-0.2V or BYTE#≤0.2V (1) 0V ≤ CS2 ≤ 0.2V or (2) CS2 ≥ Vcc-0.2V, CS1# ≥ Vcc-0.2V or (3) LB# =UB# ≥ Vcc-0.2V, CS2 ≥ Vcc-0.2V, CS1# ≤ 0.2V Vcc for data retention VDR 2.0 - 3.6 V Data retention current 4 *1 7 *2 - 12 24 50 80 - µA µA µA µA ns ~+25ºC ~+40ºC ~+70ºC ~+85ºC IccDR - Vcc=3.0V,Vin≥0V, BYTE# ≥ Vcc-0.2V or BYTE# ≤ 0.2V (1) 0V ≤ CS2 ≤ 0.2V or (2) CS2 ≥ Vcc-0.2V, CS1# ≥ Vcc-0.2V or (3) LB# =UB# ≥Vcc-0.2V, CS2 ≥ Vcc-0.2V, CS1# ≤ 0.2V Average value Chip deselect to data retention time Operation recovery time tCDR tR 0 5 See retention waveform ms Note 1. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 25ºC) and not 100% tested. 2. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 40ºC) and not 100% tested. 3. BYTE# pin is supported by only 52-pin µTSOP type. 4. Also CS2 controls address buffer, WE# buffer ,CS1# buffer ,OE# buffer ,LB# ,UB# buffer and Din buffer .If CS2 controls data retention mode,Vin levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance state. If CS1# controls data retention mode, CS2 must be CS2 ≥ Vcc-0.2V or 0V ≤ CS2 ≤ 0.2V. The other input levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance state. REJ03C0215-0300Z Rev.3.00 2008.03.03 page 14 of 15 R1W V3216R Series Low Vcc Data Retention Timing Waveform (1) (CS1# Controlled) tCDR Vcc 2.7V Data retention mode tR 2.4V V DR CS1# 0V Note: BYTE# pin is supported by only 52-pin µTSOP type. BYTE# ≥ Vcc-0.2V or BYTE# ≤ 0.2V CS1# ≥ Vcc-0.2V Low Vcc Data Retention Timing Waveform (2) (CS2 Controlled) tCDR Vcc 2.7V Data retention mode tR CS2 V DR 0.2V 0V Note: BYTE# pin is supported by only 52-pin µTSOP type. BYTE# ≥ Vcc-0.2V or BYTE# ≤ 0.2V 0V ≤ CS2 ≤ 0.2V Low Vcc Data Retention Timing Waveform (3) (LB#, UB# Controlled) tCDR Vcc 2.7V Data retention mode tR 2.4V V DR LB#, UB# 0V Note: BYTE# pin is supported by only 52-pin µTSOP type. BYTE# ≥ Vcc-0.2V or BYTE# ≤ 0.2V LB#, UB# ≥ Vcc-0.2V REJ03C0215-0300Z Rev.3.00 2008.03.03 page 15 of 15 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. 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