R2A20131SP#W5

Preliminary Data Sheet R2A20113ASP R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Critical Conduction Mode PFC Control IC Description The R2A20113A controls a boost converter to provide an active power factor correction. The R2A20113A adopts critical conduction mode for power factor correction and realizes high efficiency and a low switching noise by zero current switching. Because the zero current is detected by using the GND current, the ZCD Auxiliary winding is unnecessary. The feedback loop open detection, two mode overvoltage protection, overcurrent protection are built in the R2A20113A, and can constitute a power supply system of high reliability with few external parts. Features • Absolute Maximum Ratings ⎯ Supply voltage Vcc: 24 V ⎯ Junction temperature Tj: –40 to +150°C • Electrical characteristics ⎯ UVLO operation start voltage VH: 12 V ± 0.8 V ⎯ UVLO operation shutdown voltage VL: 9.2 V ± 0.7 V ⎯ UVLO hysteresis voltage Hysuvl: 2.8 V ± 0.7 V • Functions ⎯ Boost converter control with critical conduction mode ⎯ Two mode overvoltage protection Mode 1: Dynamic OVP corresponding to a voltage rise by load change Mode 2: Static OVP corresponding to overvoltage in stable. ⎯ Feedback loop open detection ⎯ Overcurrent protection ⎯ Dynamic UVP corresponding to a voltage fall by load change ⎯ Off Time Control function (Frequency Limitter) ⎯ Package lineup: Pb-free SOP-8 (JEDEC) Ordering Information Part No. R2A20113ASP#W5 Package Name — R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Package Code PRSP0008DJ-A Package Abbreviation SP Taping Abbreviation (Quantity) W (2,500 pcs/reel) Page 1 of 12 R2A20113ASP Preliminary Pin Arrangement FB 1 8 VCC COMP 2 7 OUT RT 3 6 GND VREF 4 5 CS (Top view) Pin Function Pin No. 1 2 3 Pin Name FB COMP RT Error amplifier input terminal Error amplifier output terminal A resistor connection terminal for RAMP current setting 4 5 6 7 8 VREF CS GND OUT VCC Reference voltage output terminal Zero current detection and overcurrent detection input terminal Ground Power MOSFET drive terminal Supply voltage terminal R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Function Page 2 of 12 R2A20113ASP Preliminary Block Diagram VREF VCC UVLO VREF: 5.02V 4 8 ON: 12V OFF: 9.2V VREF 40μA + – OUT 7 0V CS GND 60k LOGIC BLOCK – + 5 5p 6 –0.6V GD Disable (OVP & FB_LOW) OVP & FB_LOW BLOCK COMP Discharge VREF FB – + RT ErrorAmp 3 – + 1V FB 1 2.51V 4.1V 10p COMP 2 Dynamic OVP + – VFB × 1.04V Ramp Control Dynamic UVP + – R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 VFB × 0.92V Page 3 of 12 R2A20113ASP Preliminary Absolute Maximum Ratings (Ta = 25°C) Item COMP terminal current Symbol VCC Ipk-snk-out Ipk-src-out Idc-snk-out Idc-src-out Icomp RT terminal current Vref terminal current Vref terminal voltage Vref terminal load capacitor FB terminal voltage CS terminal voltage Power dissipation Operating ambient temperature Junction temperature Storage temperature Irt Iref Vt-ref Cref Vt-fb Vcs Pt Ta-opr Tj Tstg Power Supply Voltage OUT terminal peak current OUT terminal DC current Ratings –0.3 to +24 0.9 –0.50 100 –50 Unit V A +1 –1 –60 to –2 –5 –0.3 to Vref + 0.3 0.1 to 1 –0.3 to +5 –5 to +0.3 0.68 –40 to +125 –40 to +150 –55 to +150 mA Note 3 mA μA mA V μF V V W °C °C °C 4 5 Notes: 1. 2. 3. 4. Rated voltages are with reference to the GND terminal. For rated currents, inflow to the IC is indicated by (+), and outflow by (–). Shows the transient current when driving a capacitive load. In case of R2A20113ASP (SOP): θja = 120°C/W This value is a thing mounting on 40 × 40 × 1.6 [mm], a glass epoxy board of wiring density 10%. 5. Stresses exceeding the absolute maximum ratings may damage the device. These are stress ratings only. Functional operation above the recommended operating ambient temperature range is not implied. Extended exposure to stresses above the absolute maximum ratings may affect device reliability. R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Page 4 of 12 R2A20113ASP Preliminary Electrical Characteristics (Ta = 25°C, VCC = 12 V, CS = 0.1 V, FB = COMP, RRT = 200 kΩ) Item Supply VREF Error amplifier Min Typ Max Unit UVLO turn-on threshold Vuvlh Symbol 11.2 12 12.8 V UVLO turn-off threshold Vuvll 8.5 9.2 9.9 V UVLO hysteresis Hysuvl 2.1 2.8 3.5 V Standby current Istby — 130 250 μA mA Test Conditions VCC = Vuvlh – 0.2 V Operating current Icc — 1.8 2.6 Reference voltage Vref 4.945 5.020 5.095 V Line regulation Vref-line — 5 20 mV Isource = 0 mA Vcc = 10 V to 24 V Load regulation Vref-load — 5 20 mV Isource = 0 mA to –5 mA Temperature stability dVref — ±80 — ppm/°C OVP-VREF threshold voltage ovp-vref Vref+ 0.2 Vref+ 0.4 Vref+ 0.6 V Feedback voltage Vfb 2.472 2.510 2.548 V FB-COMP short Input bias current Ifb –0.40 –0.15 –0.05 μA Measured pin: FB Open loop gain Av — 65 — dB *1 Upper clamp voltage Vclamp-comp 3.65 4.10 4.3 V FB = 2.0 V COMP: Open Low voltage Vl-comp — 0.1 0.3 V FB = 3.0 V Source current Isrc-comp –13.5 –10 –6 μA FB = 1 V Isource = 0 mA Ta = –40 to +125°C *1 COMP: Open COMP = 2.5 V Sink current Isnk-comp 6 10 13.5 μA FB = 3.5 V COMP = 2.5 V Transconductance gm 25 46 75 μs FB = 2.45V ↔ 2.55 V COMP = 2.5 V RT — 1.0 — V *1 dVramp 2.90 3.1 3.3 V *2 RAMP offset voltage Voff_ramp RAMP amplitude RT voltage V-rt 1.9 2.0 2.1 V Zero ZCD threshold voltage Vzcd –4 0 4 mV current detector Input bias current Ics –58 –42 –25 μA Vcs = 0 V Restart Restart time delay Tstart 75 150 330 μs FB = 2.0 V, COMP = 2.5 V Off time control Minimum off time Toff-min 1.0 1.4 1.8 μs Notes: *1 Design spec *2 dVramp = Vclamp_comp – Voff_ramp R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Page 5 of 12 R2A20113ASP Preliminary Electrical Characteristics (cont.) (Ta = 25°C, VCC = 12 V, CS = 0.1 V, FB = COMP, RRT = 200 kΩ) Item Out Rise time Symbol tr-out Min Typ Max Unit — 35 100 ns Test Conditions CL = 1000 pF 90% 10% tr Fall time tf-out — 35 100 ns CL = 1000 pF 90% 10% tf Out low voltage Over Vol1-out — 0.08 0.2 V Isink = 20 mA Vol2-out — 0.05 0.7 V Isink = 10 mA, VCC = 5 V Out high voltage Voh-out 11.5 11.8 — V Isource = –20 mA OCP threshold voltage Vocp –0.63 –0.6 –0.57 V Dynamic OVP threshold voltage Vdovp — Vfb× 1.040 — V *1 Dynamic UVP threshold voltage Vduvp — Vfb× 0.920 — V *1 Static OVP threshold voltage Vsovp Vfb× 1.075 Vfb× 1.090 Vfb× 1.105 V Static OVP hysteresis Hys-sovp 50 100 150 mV FB low detect threshold voltage Vfblow 0.25 0.3 0.35 V FB low detect hysteresis Hysfblow 0.16 0.20 0.24 V current protection Over & Under voltage protection Note: *1 Design spec R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Page 6 of 12 R2A20113ASP Preliminary Waveforms 1. Start-up 12V (Vuvlh) VCC 5.02V (Vref) 3.6V VREF VREF GOOD (Internal signal) FB 0.5V (Vfblow + Hysfblow) COMP 1.0V (Voff_ramp) OUT 2. Shut-down 9.2V (Vuvll) VCC OUT Normal operation R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Page 7 of 12 R2A20113ASP Preliminary 3. Gate Drive Output COMP RAMP+1V (Internal signal) RAMP (Internal signal) IL 0V (Vzcd) CS OUT Enlargement around Zero-current detection COMP RAMP+1V (Internal signal) RAMP (Internal signal) IL 0mA 0V (Vzcd) CS 0.44μs OUT R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Page 8 of 12 R2A20113ASP Preliminary 4. Overvoltage Protection (OVP) Vsovp: Vfb × 1.09V Hys-sovp: 100mV VFB OUT OFF (Internal signal) COMP OUT 5. FB Low Detection VFB 0.3V (Vfblow) 0.5V (Vfblow + Hysfblow) FB LOW (Internal signal) COMP OUT R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Page 9 of 12 R2A20113ASP Preliminary 6. Overcurrent Protection (OCP) COMP RAMP+1V (Internal signal) RAMP (Internal signal) IL 0V (Vzcd) CS –0.6V (Vocp) OUT 7. Off Time Control (Frequency Limiter) IL 0A ZCD_pulse (Internal signal) ZCD_mask (Internal signal) 1.4μs (Toff_min) 1.4μs (Toff_min) 1.4μs (Toff_min) OUT R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Page 10 of 12 R2A20113ASP Preliminary System Diagram D1 L1 PFC OUT (390V dc) 6M Q1 1.0μ 220μ (450V) + From OUT VRB1 GND 0.05 (5W) AUX VREF VCC 4 8 1μ 0.1μ OUT 7 To Q1 gate GND CS 6 5 100 1000p R2A20113A RT FB 3 1 200k COMP 2 200k 0.022μ 0.047μ R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Page 11 of 12 R2A20113ASP Preliminary Package Dimensions JEITA Package Code P-SOP8-3.94x4.93-1.27 RENESAS Code PRSP0008DJ-A *1 Previous Code — MASS[Typ.] 0.073g NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. F D 8 5 c *2 E HE bp Terminal cross section Reference Symbol (Ni/Pd/Au plating) Index mark 1 Z 4 *3 e bp x M A L1 θ S A1 L y S R03DS0026EJ0501 Rev.5.01 Jan 08, 2016 Detail F D E A2 A1 A bp b1 c c1 θ HE e x y Z L L1 Dimension in Millimeters Min Nom Max 4.80 4.93 4.98 3.81 3.94 3.99 1.47 0.10 0.15 0.25 1.73 0.35 0.41 0.49 0.19 0° 5.84 0.20 5.99 1.27 0.25 8° 6.20 0.25 0.10 0.41 0.56 0.64 1.03 0.89 Page 12 of 12 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3 Tel: +1-905-237-2004 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333 Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 Renesas Electronics Hong Kong Limited Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics India Pvt. Ltd. No.777C, 100 Feet Road, HAL II Stage, Indiranagar, Bangalore, India Tel: +91-80-67208700, Fax: +91-80-67208777 Renesas Electronics Korea Co., Ltd. 12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2016 Renesas Electronics Corporation. All rights reserved. Colophon 5.0