Preliminary
R2J20605ANP
Integrated Driver – MOS FET (DrMOS)
REJ03G1821-0300 Rev.3.00 Feb 26, 2010
Description
The R2J20605ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose. Integrating a driver and both high-side and low-side power MOS FETs, the new device is also compliant with the package standard "integrated Driver – MOS FET (DrMOS)" proposed by Intel Corporation.
Features
Built-in power MOS FET suitable for Notebook, Desktop, Server application Built-in driver circuit which matches the power MOS FET Low-side MOS FET with built-in SBD for lower loss and reduced ringing Built-in tri-state input function which can support a number of PWM controllers VIN operating-voltage range: 27 V max High-frequency operation (above 1 MHz) possible Large average output current (Max. 40 A) Achieve low power dissipation Controllable driver: Remote on/off Low-side MOS FET disabled function for DCM operation Built-in thermal warning Built-in bootstrapping switch Small package: QFN56 (8 mm 8 mm 0.95 mm) Terminal Pb-free/Halogen-free
Outline
VCIN BOOT GH VIN 56 Reg5V Driver PAD High-side MOS PAD 1 14
15
DISBL# MOS FET Driver LSDBL# Low-side MOS PAD PWM 43 THWN CGND GL PGND 28 VSWH
42
29
(Bottom view) QFN56 package 8 mm × 8 mm
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 1 of 16
R2J20605ANP
Preliminary
Block Diagram
Driver Chip VCIN Reg5V BOOT GH
THWN DISBL#
THWN
UVL
Boot SW
VIN High Side MOS FET
Reg5V
20 μA
Supervisor
CGND
Reg5V
Level Shifter
25 k
150 k
LSDBL#
Reg5V
VSWH PWM
Input Logic (TTL Level) (3 state in) Overlap Protection. & Logic Reg5V
Low Side MOS FET
20 μA
PGND
CGND
GL
Notes: 1. Truth table for the DISBL# pin.
DISBL# Input "L" "Open" "H" Driver Chip Status Shutdown (GL, GH = "L") Shutdown (GL, GH = "L") Enable (GL, GH = "Active")
2. Truth table for the LSDBL# pin.
LSDBL# Input "L" "Open" "H" "L" "Active" "Active" GL Status
3. Output signal from the UVL block
UVL output Logic Level "H" For shutdown "L" VL VH VCIN For active
4. Output signal from the THWN block
"H" Thermal Warning Logic Level "L" Normal operating Thermal Warning TIC(°C) TwarnL TwarnH
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 2 of 16
R2J20605ANP
Preliminary
Pin Arrangement
LSDBL#
2
CGND
14
13
12
11
10
9
8
7
6
5
4
3
VIN
CGND
1 56 55
BOOT
VCIN
VIN
VIN
GH
NC
NC
15 16 17 18 19
PWM DISBL# Reg5V THWN GL CGND VSWH
VIN
CGND
54 53 52 51 50 49 48
VIN VSWH PGND
20 21 22 23 24 25 26 27
VSWH
47 46 45 44 43
PGND
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
VSWH
PGND
PGND
VSWH
(Top view)
Note: All die-pads (three pads in total) should be soldered to PCB.
Pin Description
Pin Name CGND LSDBL# NC VCIN BOOT GH VIN VSWH PGND GL THWN Reg5V DISBL# PWM Pin No. 1, 6, 51, Pad 2 3, 8 4 5 7 9 to 20, Pad 21, 40 to 50, Pad 22 to 39 52 53 54 55 56 Description Control signal ground Low-side gate disable No connect Control input voltage Bootstrap voltage pin High-side gate signal Input voltage Phase output/Switch output Power ground Low-side gate signal Thermal warning +5 V logic power supply output Signal disable PWM drive logic input Remarks Should be connected to PGND externally When asserted "L" signal, Low-side gate disable Driver Vcc input To be supplied +5 V through internal BOOT SW Pin for Monitor
Pin for Monitor
Disabled when DISBL# is "L" 5 V logic input
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 3 of 16
VSWH
R2J20605ANP
Preliminary
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Average output current Input voltage Switch node voltage BOOT voltage Supply voltage PWM voltage Symbol Pt(25) Pt(110) Iout VIN(DC) VIN(AC) VSWH(DC) VSWH(AC) VBOOT(DC) VBOOT(AC) VCIN Vpwm Rating 25 8 40 –0.3 to +27 30 27 30 32 36 –0.3 to +27 –0.3 to +5.5 @UVL OFF –0.3 to +0.3 @UVL ON –0.3 to Reg5V + 0.3 –0.3 to VCIN + 0.3 –0.3 to +6 –20 to +0.1 0 to 1.0 –40 to +150 –55 to +150 Units W A V V V V V Note 1
2 2, 4, 6 2 2, 4, 6 2 2, 4, 6 2 2, 4 2, 5 2, 7, 8 2 7 3 3
Other I/O voltage Reg5V voltage Reg5V current THWN current Operating junction temperature Storage temperature Notes: 1. 2. 3. 4. 5. 6. 7. 8.
Vdisble, Vlsdbl, Vthwn Vreg5V Ireg5V Ithwn Tj-opr Tstg
V V mA mA °C °C
Pt(25) represents a PCB temperature of 25°C, and Pt(110) represents 110C. Rated voltages are relative to voltages on the CGND and PGND pins. For rated current, (+) indicates inflow to the chip and (–) indicates outflow. This rating is when UVL (Under Voltage Lock out) is ineffective (normal operation mode). This rating is when UVL (Under Voltage Lock out) is effective (lock out mode). The specification values indicated "AC" are limited within 100 ns. This rating is when the external power-source is applied to Reg5V pin. Reg5V + 0.3 V < 6 V
Safe Operating Area 50 45 40 35 30 25 20 15 10 5 0
Average Output Current (A)
VOUT = 1.3 V VIN = 12 V VCIN = Reg5V = 5 V L = 0.45 μH fsw = 600 kHz
0
25
50
75 100 125 PCB Temperature (°C)
150
175
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 4 of 16
R2J20605ANP
Preliminary
Recommended Operating Condition
Item Input voltage Supply voltage Symbol VIN VCIN Rating 4.5 to 22 4.5 to 5.5 or 8 to 22 Units V V Note When the usage of VCIN = 4.5 V to 5.5 V, VCIN should be connected to Reg5V (Refer to "Pin Connection")
Electrical Characteristics
(Ta = 25C, VCIN = 12 V, VSWH = 0 V, unless otherwise specified)
Item Supply VCIN start threshold VCIN shutdown threshold UVLO hysteresis VCIN operating current VCIN disable current PWM input PWM rising threshold PWM falling threshold PWM input resistance Tri-state shutdown window Shutdown hold-off time 5V regulator DISBL# input LSDBL# input Thermal warning Output voltage Line regulation Load regulation Disable threshold Enable threshold Input current Low-side activation threshold Low-side disable threshold Input current Warning temperature Temperature hysteresis THWN on resistance THWN leakage current Symbol VH VL dUVL ICIN ICIN-DISBL VH-PWM VL-PWM RIN-PWM VIN-SD tHOLD-OFF *1 Vreg Vreg-line Vreg-load VDISBL VENBL IDISBL VLSDBLH VLSDBLL ILSDBL TTHWN *1 THYS *1 RTHWN * ILEAK
1
Min 7.0 6.6 — — — 3.0 0.9 10 VL-PWM — 4.95 –10 –10 0.9 1.9 10 1.9 0.9 –56 95 — 0.2 —
Typ 7.4 7.0 0.4 52 — 3.4 1.2 20 — 100 5.2 0 0 1.2 2.4 20 2.4 1.2 –28 115 15 0.5 0.001
Max 7.8 7.4 — — 2.5 3.8 1.5 40 VH-PWM — 5.45 10 10 1.5 2.9 40 2.9 1.5 –14 135 — 1.0 1.0
Units V V V mA mA V V k V ns V mV mV V V A V V A °C °C k A
Test Conditions
VH – VL fPWM = 1 MHz, Ton_pwm = 120 ns DISBL# = 0 V, PWM = 0 V, LSDBL# = Open
PWM = 1 V
VCIN = 12 V to 16 V Ireg = 0 to 10 mA
DISBL# = 1 V
LSDBL# = 1 V Driver IC temperature THWN = 0.2 V THWN = 5 V
Note:
1. Reference values for design. Not 100% tested in production.
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 5 of 16
R2J20605ANP
Preliminary
Typical Application
(1) Desktop/Server Application
+12 V
VCIN DISBL# Reg5V
THWN
BOOT VIN
R2J20605ANP
PWM CGND LSDBL# GH
VSWH
PGND GL
+5 V
VCIN DISBL# Reg5V
THWN
BOOT VIN
R2J20605ANP
PWM CGND LSDBL# GH PWM1
VSWH
PGND GL
PWM Control Circuit
PWM2
+1.3 V
PWM3
PWM4
VCIN DISBL# Reg5V
THWN
BOOT VIN
R2J20605ANP
PWM CGND LSDBL# GH
VSWH
Power GND
Signal GND
PGND GL
VCIN DISBL# Reg5V
THWN
BOOT VIN
R2J20605ANP
PWM CGND LSDBL# GH
VSWH
PGND GL
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 6 of 16
R2J20605ANP
Preliminary
Typical Application (cont.)
(2) Notebook Application
+19 V
+5 V
VCIN DISBL# Reg5V
THWN
BOOT VIN
R2J20605ANP
PWM CGND LSDBL# GH
VSWH
PGND GL
VCIN DISBL# Reg5V
THWN
BOOT VIN
R2J20605ANP
PWM CGND LSDBL# GH PWM1
VSWH
PGND GL
PWM Control Circuit
PWM2
+1.1 V
PWM3
VCIN DISBL# Reg5V
THWN
BOOT VIN
R2J20605ANP
PWM CGND LSDBL# GH
VSWH
Power GND
Signal GND
PGND GL
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 7 of 16
R2J20605ANP
Preliminary
Pin Connection
(1) Typical Desktop/Server Application
0.1 μF
1.0 μF
VIN 12 V
0 to 10Ω
CGND
Low Side Disable Signal INPUT
CGND
10 μF × 4
15 16 17 18 14 13 12 11 10 9 8 7 6 5 4 3 2 1
NC
VIN
VIN
GH
CGND
BOOT
NC
LSDBL#
CGND
VCIN
PWM
56 55 54 53 52 51 50 49 48
PWM INPUT
1.0 μF
DISBL# Reg5V THWN GL
VIN PAD
VIN VSWH PGND
CGND PAD
PGND
19 20 21 22 23 24 25 26 27 28
DISBL# INPUT 51 kΩ +5 V
CGND
R2J20605ANP
VSWH PAD
VSWH
47 46 45 44
Thermal Warning
PGND
VSWH
PGND
VSWH
43
29
30
31
32
33
34
35
36
37
38
39
40
41
42
0.45 μH Vout PGND PGND
(2) Typical Notebook Application
0.1 μF
VIN 19 V
0 to 10Ω
Low Side Disable Signal INPUT
CGND
10 μF × 4
15 16 17 18 14 13 12 11 10 9 8 7 6 5 4 3 2 1
NC
VIN
VIN
GH
BOOT
CGND
VCIN
NC
LSDBL#
CGND
PWM
56 55 54 53 52 51 50 49 48
PWM INPUT
DISBL# Reg5V THWN GL
VIN PAD
VIN VSWH PGND
CGND PAD
1.0 μF
PGND
19 20 21 22 23 24 25 26 27
CGND
DISBL# INPUT 51 kΩ +5 V
R2J20605ANP
VSWH PAD
VSWH
5.0 V External Power Supply
47 46 45 44
Thermal Warning
VSWH
PGND
28
PGND
VSWH
43
29
30
31
32
33
34
35
36
37
38
39
40
41
42
0.45 μH Vout PGND PGND
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 8 of 16
R2J20605ANP
Preliminary
Test Circuit
Vinput
A
IIN
V VIN
Vcont
A
ICIN VCIN V
VCIN DISBL# BOOT VIN
R2J20605ANP
Reg5V LSDBL# THWN VSWH
5 V pulse
PWM CGND GH GL
PGND
Electric load
IO
Note: PIN = IIN × VIN + ICIN × VCIN POUT = IO × VO Efficiency = POUT / PIN PLOSS(DrMOS) = PIN – POUT Ta = 27°C
Average Output Voltage Averaging V VO circuit
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 9 of 16
R2J20605ANP
Preliminary
Typical Data
Power Loss vs. Output Current 10 9 VCIN = Reg5V = 5 V 8 VOUT = 1.3 V
Power Loss (W)
fPWM = 600 kHz 7 L = 0.45 μH VIN = 12 V
Power Loss vs. Input Voltage 1.6
VCIN = Reg5V = 5 V
1.5 VOUT = 1.3 V
Normalized Power Loss @ VIN = 12 V
1.4 L = 0.45 μH 1.3 1.2 1.1 1.0 0.9 0.8
fPWM = 600 kHz
IOUT = 30 A
6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40
0.7
4
6
8
10
12
14
16
18
20
22
Output Current (A)
Input Voltage (V)
Power Loss vs. Output Voltage 1.6
VIN = 12 V
Power Loss vs. Switching Frequency 1.6
VIN = 12 V
1.5 VCIN = Reg5V = 5 V
Normalized Power Loss @ VOUT = 1.3 V Normalized Power Loss @ fPWM = 600 kHz
1.5 VCIN = Reg5V = 5 V 1.4 L = 0.45 μH 1.3 1.2 1.1 1.0 0.9 0.8 0.7 250 500 750 1000 1250
VOUT = 1.3 V IOUT = 30 A
1.4 L = 0.45 μH 1.3 1.2 1.1 1.0 0.9 0.8
fPWM = 600 kHz
IOUT = 30 A
0.7 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 Output Voltage (V)
Switching Frequency (kHz)
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 10 of 16
R2J20605ANP
Preliminary
Typical Data (cont.)
Power Loss vs. Output Inductance 1.6
VIN = 12 V
Power Loss vs. VCIN 1.6
VIN = 12 V
1.5 VCIN = Reg5V = 5 V
Normalized Power Loss @ L = 0.45 μH Normalized Power Loss @ VCIN = 5 V
1.5 VOUT = 1.3 V 1.4 L = 0.45 μH
fPWM = 600 kHz IOUT = 30 A
1.4 fPWM = 600 kHz 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Inductance (μH)
IOUT = 30 A
VOUT = 1.3 V
1.3 VCIN = Reg5V 1.2 1.1 1.0 0.9 0.8 0.7 4.5 5.0 VCIN (V) 5.5 6.0
Average ICIN vs. Switching Frequency 80
VIN = 12 V
70 VCIN = Reg5V = 5 V
Average ICIN (mA)
VOUT = 1.3 V L = 0.45 μH 60 IOUT = 0 A
50 40 30 20 10 250 500 750 1000 1250
Switching Frequency (kHz)
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 11 of 16
R2J20605ANP
Preliminary
Description of Operation
The DrMOS multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. Since the parasitic inductance between each chip is extremely small, the module is highly suitable for use in buck converters to be operated at high frequencies. The control timing between the high-side MOS FET, lowside MOS FET, and driver is optimized so that high efficiency can be obtained at low output-voltage. VCIN & DISBL# The VCIN pin is connected to the UVL (under-voltage lockout) module, so that the buit-in 5 V regulator is disabled as long as VCIN is 7.4 V or less. On cancellation of UVL, the built-in 5 V regulator remains enabled until the UVL input is driven to 7.0 V or less. The built-in 5 V regulator is a series regulator with temperature compensation. A ceramic capacitor with a value of 0.1 F or more must be connected between the CGND plane and the Reg5V Pin. The output of 5 V regulator is monitored by the internal Supervisor circuits. When the Supervisor detects this output is more than 4.2 V (typ.), the driver state becomes active (figure1.1). Figure 1.2 shows the application when the external 5 V regulator is used. When the Reg5V pin is applied into external 5 V, the Supervisor can activate the driver. In this application usage, VCIN should be connected to Reg5V. The signal on pin DISBL# also enables or disables the circuit. When UVL disables the circuit, the built-in 5 V regulator does not operate, but when the signal on DISBL# disables the circuit, only output-pulse generation is terminated, and the 5 V regulator is not disabled. Voltages from –0.3 V to VCIN + 0.3 V can be applied to the DISBL# pin, so on/off control by a logic IC or the use of a resistor, etc., to pull the DISBL# line up to VCIN are both possible.
VCIN L H H H DISBL# L H Open REG5V 0 Active Active Active Driver State Disable (GL, GH = L) Disable (GL, GH = L) Active Disable (GL, GH = L)
12 V
VCIN
VCIN > 7.4 V VCIN
5V
IN
OUT OUT
Reg5V
IN
Reg5V External 5 V
UVL & 5 V Regulator To Internal Logic Supervisor
UVL & 5 V Regulator To Internal Logic Supervisor
Figure 1.1 Typical 12 V Input Application (Activate Built-in 5 V Regulator)
Figure 1.2 External 5 V Application
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 12 of 16
R2J20605ANP PWM & LSDBL#
Preliminary
The PWM pin is the signal input pin for the driver chip. When the PWM input is high, the gate of the high-side MOS FET (GH) is high and the gate of the low-side MOS FET (GL) is low.
PWM L H GH L H GL H L
The LSDBL# pin is the Low Side Gate Disable pin for "Discontinuous Conduction Mode (DCM)" when LSDBL# is low. Figure 2 shows the Typical high side and low side gate switching and Inductor current (IL) during "Continuous Conduction Mode (CCM)" and low side gate disabled when asserting LSDBL# signal. This pin is internally pulled up to Reg5V with 150 k resistor. When low side disable function is not used, keep this pin open or pulled up to VCIN.
CCM Operation (LSDBL# = "H" or Open mode) IL GH GL
Figure 2.1 Typical Signals during CCM
DCM Operation (LSDBL# = "L") IL 0A
GH GL
Figure 2.2 Typical Signals during DCM
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 13 of 16
R2J20605ANP
Preliminary
The PWM input is TTL level and has hysteresis. When the PWM input signal is abnormal, e.g., when the signal route from the control IC is abnormal, the tri-state function turns off the high- and low-side MOS FETs. This function operates when the PWM input signal stays in the input hysteresis window for 100 ns (typ.). After the tri-state mode has been entered and GH and GL have become low, a PWM input voltage of 3.4 V or more is required to make the circuit return to normal operation.
100 ns (tHOLD-OFF) 100 ns (tHOLD-OFF)
3.4 V
PWM 1.2 V
GH
GL
100 ns (tHOLD-OFF)
100 ns (tHOLD-OFF)
3.4 V
PWM 1.2 V
GH
GL
Figure 3 PWM Shutdown-Hold Time Signal
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 14 of 16
R2J20605ANP
Preliminary
The equivalent circuit for the PWM-pin input is shown in the next figure. M1 is in the ON state during normal operation; after the PWM input signal has stayed in the hysteresis window for 100 ns (typ.) and the tri-state detection signal has been driven high, the transistor M1 is turned off. When VCIN is powered up, M1 is started in the OFF state regardless of PWM Low or Open state. After PWM is asserted high signal, M1 becomes ON and shifts to normal operation.
VCIN M1 20 k PWM Pin Input Logic 20 k Tri-state detection signal To internal control DISBL#
Figure 4 Equivalent Circuit for the PWM-pin Input THWN This Thermal Warning feature is the indication of the high temperature status. THWN is an open drain logic output signal and need to connect a pull-up resistor (ex.51 k) to THWN for Systems with the thermal warning implementation. When the chip temperature of the internal driver IC becomes over 115°C, Thermal warning function operates. This signal is only indication for the system controller and does not disable DrMOS operation. When thermal warning function is not used, keep this pin open.
Thermal Warning
"H" THWN output Logic Level "L"
Normal operating
100
115
TIC (°C)
Figure 5 MOS FETs The MOS FETs incorporated in R2J20605ANP are highly suitable for synchronous-rectification buck conversion. For the high-side MOS FET, the drain is connected to the VIN pin and the source is connected to the VSWH pin. For the low-side MOS FET, the drain is connected to the VSWH pin and the source is connected to the PGND pin.
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 15 of 16
R2J20605ANP
Preliminary
Package Dimensions
JEITA Package Code P-HVQFN56-8x8-0.50 RENESAS Code PVQN0056KA-A Previous Code — MASS[Typ.] 0.2g
HD D 42 43 29 28
28 29 42 43 3.0
HE
e
0.0 0.3 1.0
E
Lp
C 4 0.
3.0
Reference Symbol
Dimension in Millimeters
1 Index mark
14 ZD
ZE
56
15
15 14 1 b b1
56
y
Min Nom Max D 7.95 8.00 8.05 E 7.95 8.00 8.05 A2 A 0.95 A1 0.005 b 0.20 0.25 0.30 b1 0.23 e 0.50 Lp 0.40 0.50 0.60 x y 0.05 y1 t HD 8.10 8.20 8.30 HE 8.10 8.20 8.30 ZD 0.75 ZE 0.75 c 0.17 0.22 0.27 c1 0.20
3.0
0.0 0.4 1.0
c1
c
Ordering Information
Part Name R2J20605ANP#G3 Quantity 2500 pcs Shipping Container Taping Reel
REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Page 16 of 16
A1
A
3.0
Notice
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Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141
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