Preliminary
R2J20652ANP
Integrated Driver – MOS FET (DrMOS)
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Description
The R2J20652ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose.
Features
Based on Intel 6 6 DrMOS specification pin out Built-in power MOS FET suitable for Notebook, Desktop, Server application Low-side MOS FET with built-in SBD for lower loss and reduced ringing Built-in driver circuit which matches the power MOS FET Built-in tri-state input function which can support a number of PWM controllers VIN operating-voltage range: 27 V max High-frequency operation (above 1 MHz) possible Large average output current (Max. 35 A) Achieve low power dissipation Controllable driver: Remote on/off Low-side MOS FET disabled function for DCM operation Built-in bootstrapping switch Small package: QFN40 (6 mm 6 mm 0.95 mm) Terminal Pb-free/Halogen-free
Outline
Integrated Driver-MOS FET (DrMOS) QFN40 package 6 mm × 6 mm VCIN BOOT GH VIN 40 Reg5V Driver Pad High-side MOS Pad 1 10 11
DISBL# MOS FET Driver LSDBL# Low-side MOS Pad PWM 31 CGND GL PGND 30 (Bottom view) 21 20 VSWH
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 1 of 16
R2J20652ANP
Preliminary
Block Diagram
Driver Chip VCIN Reg5V BOOT GH
UVL
Boot SW
VIN High Side MOS FET
DISBL#
2 μA
Reg5V
Supervisor
CGND
Reg5V
Level Shifter
25 k
150 k
LSDBL#
Reg5V
VSWH PWM
Input Logic (TTL Level) (3 state in) Overlap Protection. & Logic Reg5V
Low Side MOS FET
20 μA
PGND
CGND
GL
Notes: 1. Truth table for the DISBL# pin.
DISBL# Input "L" "Open" "H" Driver Chip Status Shutdown (GL, GH = "L") Shutdown (GL, GH = "L") Enable (GL, GH = "Active")
2. Truth table for the LSDBL# pin.
LSDBL# Input "L" "Open" "H" "L" "Active" "Active" GL Status
3. Output signal from the UVL block
UVL output Logic Level "H" For shutdown "L" VL VH VCIN For active
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 2 of 16
R2J20652ANP
Preliminary
Pin Arrangement
VSWH CGND BOOT VCIN
3
VIN
VIN
VIN
GH
10
9
8
7
6
5
4
NC
2
VIN VIN VIN VIN VSWH PGND PGND PGND PGND PGND
LSDBL#
1 40 39
11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
PWM DISBL# Reg5V CGND GL VSWH VSWH VSWH VSWH VSWH
VIN
CGND
38 37 36 35
VSWH
34 33 32 31
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
VSWH
(Top view)
Note: All die-pads (three pads in total) should be soldered to PCB.
Pin Description
Pin Name LSDBL# NC VCIN BOOT CGND GH VIN VSWH PGND GL Reg5V DISBL# PWM Pin No. 1 2 3 4 5, 37, Pad 6 8 to 14, Pad 7, 15, 29 to 35, Pad 16 to 28 36 38 39 40 Description Low-side gate disable No connect Control input voltage Bootstrap voltage pin Control signal ground High-side gate signal Input voltage Phase output/Switch output Power ground Low-side gate signal +5 V logic power supply output Signal disable PWM drive logic input Remarks When asserted "L" signal, Low-side gate disable Driver Vcc input To be supplied +5 V through internal switch Should be connected to PGND externally Pin for Monitor
Pin for Monitor Disabled when DISBL# is "L" 5 V logic input
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 3 of 16
VSWH
R2J20652ANP
Preliminary
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Average output current Input voltage Switch node voltage BOOT voltage Supply voltage PWM voltage Symbol Pt(25) Pt(110) Iout VIN(DC) VIN(AC) VSWH(DC) VSWH(AC) VBOOT(DC) VBOOT(AC) VCIN Vpwm Rating 25 8 35 –0.3 to +27 30 27 30 32 36 –0.3 to +27 –0.3 to +5.5 @UVL OFF –0.3 to +0.3 @UVL ON –0.3 to Reg5V + 0.3 –0.3 to VCIN + 0.3 –0.3 to +6 –20 to +0.1 0 to 1.0 –40 to +150 –55 to +150 Units W A V V V V V Note 1
2 2, 4, 6 2 2, 4, 6 2 2, 4, 6 2 2, 4 2, 5 2, 7, 8 2 7 3 3
Other I/O voltage Reg5V voltage Reg5V current DISBL# current Operating junction temperature Storage temperature Notes: 1. 2. 3. 4. 5. 6. 7. 8.
Vdisbl, Vlsdbl Vreg5V Ireg5V Idisbl Tj-opr Tstg
V V mA mA °C °C
Pt(25) represents a PCB temperature of 25°C, and Pt(110) represents 110C. Rated voltages are relative to voltages on the CGND and PGND pins. For rated current, (+) indicates inflow to the chip and (–) indicates outflow. This rating is when UVL (Under Voltage Lock out) is ineffective (normal operation mode). This rating is when UVL (Under Voltage Lock out) is effective (lock out mode). The specification values indicated "AC" are limited within 100 ns. This rating is when the external power-source is applied to Reg5V pin. Reg5V + 0.3 V < 6 V
Safe Operating Area 45
Average Output Current (A)
40 35 30 25 20 15 10 5 0 0
VOUT = 1.3 V VIN = 12 V VCIN = 12 V L = 0.45 μH Fsw = 1 MHz
25
50
75 100 125 PCB Temperature (°C)
150
175
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 4 of 16
R2J20652ANP
Preliminary
Recommended Operating Condition
Item Input voltage Supply voltage Symbol VIN VCIN Rating 4.5 to 22 4.5 to 5.5 or 8 to 22 Units V V Note When the usage of VCIN = 4.5 V to 5.5 V, VCIN should be connected to Reg5V (Refer to "Pin Connection")
Electrical Characteristics
(Ta = 25C, VCIN = 12 V, VSWH = 0 V, unless otherwise specified)
Item Supply VCIN start threshold VCIN shutdown threshold UVLO hysteresis VCIN operating current VCIN disable current PWM input PWM rising threshold PWM falling threshold PWM input resistance Tri-state shutdown window Shutdown hold-off time 5V regulator DISBL# input LSDBL# input Output voltage Line regulation Load regulation Disable threshold Enable threshold Input current Low-side activation threshold Low-side disable threshold Input current Symbol VH VL dUVL ICIN ICIN-DISBL VH-PWM VL-PWM RIN-PWM VIN-SD tHOLD-OFF *1 Vreg Vreg-line Vreg-load VDISBL VENBL IDISBL VLSDBLH VLSDBLL ILSDBL Min 7.0 6.6 — — — 3.0 0.9 10 VL-PWM — 4.95 –10 –10 0.9 1.9 10 1.9 0.9 –56 Typ 7.4 7.0 0.4 34 — 3.4 1.2 20 — 100 5.2 0 0 1.2 2.4 20 2.4 1.2 –28 Max 7.8 7.4 — — 2.5 3.8 1.5 40 VH-PWM — 5.45 10 10 1.5 2.9 40 2.9 1.5 –14 Units V V V mA mA V V k V ns V mV mV V V A V V A LSDBL# = 1 V DISBL# = 1 V VCIN = 12 V to 16 V Ireg = 0 to 10 mA PWM = 1 V VH – VL fPWM = 1 MHz, Ton_pwm = 120 ns DISBL# = 0 V, PWM = 0 V, LSDBL# = Open Test Conditions
Note:
1. Reference values for design. Not 100% tested in production.
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 5 of 16
R2J20652ANP
Preliminary
Typical Application
(1) Desktop/Server Application
+12 V
VCIN DISBL# Reg5V
BOOT VIN
R2J20652ANP
PWM CGND LSDBL# GH
VSWH
PGND GL
+5 V
VCIN DISBL# Reg5V
BOOT VIN
R2J20652ANP
PWM CGND LSDBL# GH PWM1
VSWH
PGND GL
PWM Control Circuit
PWM2
+1.3 V
PWM3
PWM4
VCIN DISBL# Reg5V
BOOT VIN
R2J20652ANP
PWM CGND LSDBL# GH
VSWH
Power GND
Signal GND
PGND GL
VCIN DISBL# Reg5V
BOOT VIN
R2J20652ANP
PWM CGND LSDBL# GH
VSWH
PGND GL
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 6 of 16
R2J20652ANP
Preliminary
Typical Application (cont.)
(2) Notebook Application
+19 V
+5 V
VCIN DISBL# Reg5V
BOOT VIN
R2J20652ANP
PWM CGND LSDBL# GH
VSWH
PGND GL
VCIN DISBL# Reg5V
BOOT VIN
R2J20652ANP
PWM CGND LSDBL# GH PWM1
VSWH
PGND GL
PWM Control Circuit
PWM2
+1.1 V
PWM3
VCIN DISBL# Reg5V
BOOT VIN
R2J20652ANP
PWM CGND LSDBL# GH
VSWH
Power GND
Signal GND
PGND GL
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 7 of 16
R2J20652ANP
Preliminary
Pin Connection
(1) Typical Desktop/Server Application
0.1 μF
0 to 10 Ω
1.0 μF
CGND Low Side Disable Signal INPUT
VIN 12 V
10 μF × 4
11 12
CGND
10 9 8
VIN
7
VSWH
6
GH
5
CGND
4
BOOT
3
VCIN
2
NC
1
LSDBL#
PWM 40
PWM INPUT
PGND
13 14 VIN 15 VSWH 16 PGND 17 18 19
VIN PAD
CGND PAD
DSBL# 39 Reg5V 38 CGND 37 1.0 μF
DSBL# INPUT
R2J20652ANP
VSWH PAD
VSWH
GL 36 VSWH 35 34 33 32
21
22
23
24
25
26
27
28
PGND
20
31
29
30
Power GND
Signal GND
0.45 μH Vout
PGND
PGND
(2) Typical Notebook Application
0.1 μF
0 to 10 Ω
VIN 19 V
Low Side Disable Signal INPUT
10 μF × 4
11 12
CGND
10 9 8
VIN
7
VSWH
6
GH
5
CGND
4
BOOT
3
VCIN
2
NC
1
LSDBL#
PWM 40
PWM INPUT
PGND
13 14 VIN 15 VSWH 16 PGND 17 18 19
VIN PAD
CGND PAD
DSBL# 39 Reg5V 38 CGND 37
R2J20652ANP
VSWH PAD
VSWH
GL 36 VSWH 35 34
1.0 μF
5.0 V External Power Supply DSBL# INPUT
33 32
PGND
20
31
21
22
23
24
25
26
27
28
29
30
Power GND
Signal GND
0.45 μH Vout
PGND
PGND
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 8 of 16
R2J20652ANP
Preliminary
Test Circuit
Vinput
A
IIN
V VIN
Vcont
A
ICIN VCIN V
VCIN DISBL# BOOT VIN
R2J20652ANP
Reg5V LSDBL# VSWH
5 V pulse
PWM CGND GH GL
PGND
Electric load
IO
Note: PIN = IIN × VIN + ICIN × VCIN POUT = IO × VO Efficiency = POUT / PIN PLOSS(DrMOS) = PIN – POUT Ta = 27°C
Average Output Voltage Averaging V VO circuit
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 9 of 16
R2J20652ANP
Preliminary
Typical Data
Power Loss vs. Output Current 9
VIN = 12 V
Power Loss vs. Input Voltage 1.5
VCIN = Reg5V = 5 V VOUT = 1.3 V 1.4 f PWM = 600 kHz L = 0.45 μH 1.3 IOUT = 25 A
8 VCIN = Reg5V = 5 V
VOUT = 1.3 V L = 0.45 μH
6 5 4 3 2 1 0 0 5 10 15 20 25 30 35
Normalized Power Loss @ VIN = 12 V
7 fPWM = 600 kHz
Power Loss (W)
1.2 1.1 1.0 0.9 0.8
4
6
8
10
12
14
16
18
20
22
Output Current (A)
Input Voltage (V)
Power Loss vs. Output Voltage 1.5
VIN = 12 V VCIN = Reg5V = 5 V 1.4 f PWM = 600 kHz L = 0.45 μH 1.3 IOUT = 25 A
Power Loss vs. Switching Frequency 1.5
VIN = 12 V VCIN = Reg5V = 5 V 1.4 VOUT = 1.3 V L = 0.45 μH 1.3 IOUT = 25 A
Normalized Power Loss @ VOUT = 1.3 V
1.2 1.1 1.0 0.9 0.8 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 Output Voltage (V)
Normalized Power Loss @ fPWM = 600 kHz
1.2 1.1 1.0 0.9 0.8 250
500
750
1000
1250
Switching Frequency (kHz)
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 10 of 16
R2J20652ANP
Power Loss vs. Output Inductance 1.5 1.4
VIN = 12 V VCIN = Reg5V = 5 V VOUT = 1.3 V fPWM = 600 kHz IOUT = 25 A
Preliminary
Power Loss vs. VCIN 1.5
VIN = 12 V VOUT = 1.3 V 1.4 f PWM = 600 kHz L = 0.45 μH 1.3 IOUT = 25 A
Normalized Power Loss @ L = 0.45 μH
1.3 1.2 1.1 1.0 0.9
Normalized Power Loss @ VCIN = Reg5V = 5 V
1.2 1.1 1.0 0.9 0.8 4.5
0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Inductance (μH)
5.0
5.5
6.0
VCIN = Reg5V (V)
Average ICIN vs. Switching Frequency 50
VIN = 12 V VCIN = Reg5V = 5 V VOUT = 1.3 V L = 0.45 μH IOUT = 0 A
40
Average ICIN (mA)
30
20
10
0 250
500
750
1000
1250
Switching Frequency (kHz)
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 11 of 16
R2J20652ANP
Preliminary
Description of Operation
The DrMOS multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. Since the parasitic inductance between each chip is extremely small, the module is highly suitable for use in buck converters to be operated at high frequencies. The control timing between the high-side MOS FET, lowside MOS FET, and driver is optimized so that high efficiency can be obtained at low output-voltage. VCIN & DISBL# The VCIN pin is connected to the UVL (under-voltage lockout) module, so that the built-in 5 V regulator is disabled as long as VCIN is 7.4 V or less. On cancellation of UVL, the built-in 5 V regulator remains enabled until the UVL input is driven to 7.0 V or less. The built-in 5 V regulator is a series regulator with temperature compensation. A ceramic capacitor with a value of 0.1 F or more must be connected between the CGND plane and the Reg5V Pin. The output of 5 V regulator is monitored by the internal Supervisor circuits. When the Supervisor detects this output is more than 4.2 V (typ.), the driver state becomes active (figure1.1). Figure 1.2 shows the application when the external 5 V regulator is used. When the Reg5V pin is applied into external 5 V, the Supervisor can activate the driver. In this application usage, VCIN should be connected to Reg5V. The signal on pin DISBL# also enables or disables the circuit. When UVL disables the circuit, the built-in 5 V regulator does not operate, but when the signal on DISBL# disables the circuit, only output-pulse generation is terminated, and the 5 V regulator is not disabled. Voltages from –0.3 V to VCIN + 0.3 V can be applied to the DISBL# pin, so on/off control by a logic IC or the use of a resistor, etc., to pull the DISBL# line up to VCIN are both possible.
VCIN L H H H DISBL# L H Open REG5V 0 Active Active Active Driver State Disable (GL, GH = L) Disable (GL, GH = L) Active Disable (GL, GH = L)
12 V
VCIN
VCIN > 7.4 V VCIN
5V
IN
OUT OUT
Reg5V
IN
Reg5V External 5 V
UVL & 5 V Regulator To Internal Logic Supervisor
UVL & 5 V Regulator To Internal Logic Supervisor
Figure 1.1 Typical 12 V Input Application (Activate Built-in 5 V Regulator)
Figure 1.2 External 5 V Application
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 12 of 16
R2J20652ANP PWM & LSDBL#
Preliminary
The PWM pin is the signal input pin for the driver chip. When the PWM input is high, the gate of the high-side MOS FET (GH) is high and the gate of the low-side MOS FET (GL) is low.
PWM L H GH L H GL H L
The LSDBL# pin is the Low Side Gate Disable pin for "Discontinuous Conduction Mode (DCM)" when LSDBL# is low. Figure 2 shows the Typical high-side and low-side gate switching and Inductor current (IL) during "Continuous Conduction Mode (CCM)" and low-side gate disabled when asserting LSDBL# signal. This pin is internally pulled up to Reg5V with 150 k resistor. When low-side disable function is not used, keep this pin open or pulled up to VCIN.
CCM Operation (LSDBL# = "H" or Open mode) IL GH GL
Figure 2.1 Typical Signals during CCM
DCM Operation (LSDBL# = "L") IL 0A
GH GL
Figure 2.2 Typical Signals during DCM
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 13 of 16
R2J20652ANP
Preliminary
The PWM input is TTL level and has hysteresis. When the signal route from the control IC is high impedance, the tristate function turns off the high- and low-side MOS FETs. This function operates when the PWM input signal stays in the input hysteresis window for 100 ns (typ.). After the tri-state mode has been entered and GH and GL have become low, a PWM input voltage of 3.4 V or more is required to make the circuit return to normal operation.
100 ns (tHOLD-OFF) 100 ns (tHOLD-OFF)
3.4 V
PWM 1.2 V
GH
GL
100 ns (tHOLD-OFF)
100 ns (tHOLD-OFF)
3.4 V
PWM 1.2 V
GH
GL
Figure 3 PWM Shutdown-Hold Time Signal
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 14 of 16
R2J20652ANP
Preliminary
The equivalent circuit for the PWM-pin input is shown in the next figure. M1 is in the ON state during normal operation; after the PWM input signal has stayed in the hysteresis window for 100 ns (typ.) and the tri-state detection signal has been driven high, the transistor M1 is turned off. When VCIN is powered up, M1 is started in the OFF state regardless of PWM Low or Open state. After PWM is asserted high signal, M1 becomes ON and shifts to normal operation.
VCIN M1 20 k PWM Pin Input Logic 20 k Tri-state detection signal To internal control DISBL#
Figure 4 Equivalent Circuit for the PWM-pin Input
MOS FETs The MOS FETs incorporated in R2J20652ANP are highly suitable for synchronous-rectification buck conversion. For the high-side MOS FET, the drain is connected to the VIN pin and the source is connected to the VSWH pin. For the low-side MOS FET, the drain is connected to the VSWH pin and the source is connected to the PGND pin.
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 15 of 16
R2J20652ANP
Preliminary
Package Dimensions
JEITA Package Code P-HVQFN40-p-0606-0.50 RENESAS Code PVQN0040KC-A Previous Code — MASS[Typ.] —
HD D
2.2
0.2 0.2
B
INDEX
1pin 40
4-C0.50
40
1pin
B 2.2 C0.3
E /2
1.95
A
2.2
0.7 0.2
Reference Symbol
HD/2
D /2
HE E
1.95
HE/2
t S AB
e y1 S
X4 f S AB b
2.2
X4
20°
20°
L1
x
S AB
S
A A2 0.69
A1
c2
Lp
yS
Ordering Information
Part Name R2J20652ANP#G3 Quantity 2500 pcs Shipping Container Taping Reel
REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Page 16 of 16
2.05
ZD
ZE
4(0 .1 39 )
1.95
2-A section
CAV No. Die No.
Dimension in Millimeters
1.95
2.05
Min Nom Max D 5.95 6.00 6.05 5.95 6.00 6.05 E A2 0.87 0.89 0.91 f — — 0.20 A 0.865 0.91 0.95 A1 0.005 0.02 0.04 b 0.17 0.22 0.27 b1 0.16 0.20 0.24 — 0.50 — e Lp 0.40 0.50 0.60 x — — 0.05 y — — 0.05 y1 — — 0.20 t — — 0.20 HD 6.15 6.20 6.25 HE 6.15 6.20 6.25 ZD — 0.75 — ZE — 0.75 — L1 0.06 0.10 0.14 c1 0.17 0.20 0.23 c2 0.17 0.22 0.27
Notice
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Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141
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