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R2J20657NP#G3

R2J20657NP#G3

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    QFN40

  • 描述:

    HALF BRIDGE BASED MOSFET DRIVER

  • 数据手册
  • 价格&库存
R2J20657NP#G3 数据手册
Preliminary Datasheet R2J20657NP R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20657NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose. Features                Based on Intel 6  6 DrMOS Specification. Built-in power MOS FET suitable for Desktop, Server application. Low-side MOS FET with built-in SBD for lower loss and reduced ringing. Built-in driver circuit which matches the power MOS FET Built-in tri-state input function which can support a number of PWM controllers High-frequency operation (above 1 MHz) possible VIN operating-voltage range: 20 Vmax Large average output current (Max.40 A) Achieve low power dissipation Controllable driver: Remote on/off Low-side MOS FET disabled function for DCM operation Double thermal protection: Thermal Warning & Thermal Shutdown Built-in bootstrapping Switch Small package: QFN40 (6 mm  6 mm  0.95 mm) Terminal Pb-free/Halogen-free Outline Integrated Driver-MOS FET (DrMOS) QFN40 package 6 mm × 6 mm VCIN Reg5V BOOT GH VIN 1 10 11 40 THWN Driver Pad High-side MOS Pad DISBL# VSWH MOS FET Driver LSDBL# Low-side MOS Pad PWM 31 CGND GL PGND 20 30 21 (Bottom view) R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Page 1 of 16 R2J20657NP Preliminary Block Diagram Driver Chip VCIN THWN THWN Reg5V UVL THDN BOOT GH Boot SW VIN Reg5V DISBL# High-side MOS FET 2 μA Supervisor CGND Level Shifter 20 k CGND Reg5V 160 k LSDBL# VSWH Overlap Protection. & Logic PWM Low-side MOS FET Reg5V Reg5V Input Logic (TTL Level) (3 state in) 35 k PGND CGND GL Notes: 1. Truth table for the DISBL# pin DISBL# Input Driver Chip Status "L" Shutdown (GL, GH = "L") "Open" Shutdown (GL, GH = "L") "H" Enable (GL, GH = "Active") 3. Output signal from the UVL block UVL output Logic Level For shutdown "L" VCIN VL "L" "Open" "H" "L" "Active" "Active" 4. Output signal from the THWN block For active "H" 2. Truth table for the LSDBL# pin LSDBL# Input GL Status VH "H" Thermal Warning Logic Level "L" Normal operating Thermal Warning TIC(°C) TwarnL TwarnH 5. Truth table for the THDN block Driver IC Temp. Driver Chip Status < 150°C Enable (GL, GH = "Active") > 150°C Shutdown (GL, GH = "L") (latch-off) R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Page 2 of 16 R2J20657NP Preliminary VIN 11 VIN 12 VIN 13 VIN VIN VIN VSWH GH CGND BOOT VCIN Reg5V LSDBL# Pin Arrangement 10 9 8 7 6 5 4 3 2 1 40 PWM 39 DISBL# 38 THWN VIN 14 37 CGND VSWH 15 36 GL PGND 16 35 VSWH PGND 17 34 VSWH PGND 18 33 VSWH PGND 19 32 VSWH PGND 20 31 VSWH VIN CGND VSWH VSWH PGND VSWH PGND PGND PGND PGND PGND PGND PGND 21 22 23 24 25 26 27 28 29 30 (Top view) Note: All die-pads (three pads in total) should be soldered to PCB. Pin Description Pin Name LSDBL# Reg5V VCIN BOOT CGND GH VIN VSWH PGND GL THWN DISBL# Pin No. 1 2 3 4 5, 37, Pad 6 8 to 14, Pad 7, 15, 29 to 35, Pad 16 to 28 36 38 39 Description Low-side gate disable +5 V logic power supply output Control input voltage Bootstrap voltage pin Control signal ground High-side gate signal Input voltage Phase output/Switch output Power ground Low-side gate signal Thermal warning Signal disable PWM 40 PWM drive logic input R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Remarks When asserted "L" signal, Low-side gate disable Driver Vcc input To be supplied +5 V through internal switch Should be connected to PGND externally Pin for monitor Pin for monitor Thermal warning when over 115°C Disabled when DISBL# is "L". This Pin is pulled low when internal IC over the thermal shutdown level, 150°C. Capable of both 3.3 V and 5 V logic input Page 3 of 16 R2J20657NP Preliminary Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Supply voltage PWM voltage Symbol Pt(25) Pt(110) Iout VIN(DC) VIN(AC) VSWH(DC) VSWH(AC) VBOOT(DC) VBOOT(AC) VCIN Vpwm Other I/O voltage Reg5V voltage Reg5V current THWN/THDN current Vdisbl, Vlsdbl Vreg5V Ireg5V Ithwn, Idisbl Operating junction temperature Storage temperature Tj-opr Tstg Average output current Input voltage Switch node voltage BOOT voltage Notes: 1. 2. 3. 4. 5. 6. 7. 8. Rating 25 8 40 –0.3 to +20 30 20 30 25 36 –0.3 to +27 Units W A V V V V V –0.3 to +5.5 @UVL OFF –0.3 to +0.3 @UVL ON –0.3 to Reg5V + 0.3 –0.3 to VCIN + 0.3 –0.3 to +6 –20 to +0.1 0 to 1.0 V V mA mA –40 to +150 –55 to +150 °C °C Note 1 2 2, 4, 6 2 2, 4, 6 2 2, 4, 6 2 2, 4 2, 5 2, 7, 8 2 2, 7 3 3 Pt(25) represents a PCB temperature of 25°C, and Pt(110) represents 110C. Rated voltages are relative to voltages on the CGND and PGND pins. For rated current, (+) indicates inflow to the chip and (–) indicates outflow. This rating is when UVL (Under Voltage Lock out) is ineffective (normal operation mode). This rating is when UVL (Under Voltage Lock out) is effective (lock out mode). The specification values indicated "AC" is limited within 10 ns. This rating is when the external power-source is applied to Reg5V pin. Reg5V + 0.3 V < 6 V Safe Operating Area 50 Average Output Current (A) 45 40 35 30 25 20 15 VIN = 12 V VCIN = Reg5V = 5 V VOUT = 1.3 V fPWM = 1 MHz L = 0.45 μH 10 5 0 0 R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 25 50 75 100 PCB Temperature (°C) 125 150 175 Page 4 of 16 R2J20657NP Preliminary Recommended Operating Condition Item Input voltage Symbol VIN Rating 4.5 to 16 Units V Supply voltage & Drive voltage VCIN 4.5 to 5.5 or 8 to 22 V Note When the usage of VCIN = 4.5 V to 5.5 V, VCIN should be connected to Reg5V (Refer to "Pin Connection") Electrical Characteristics (Ta = 25°C, VCIN = 12 V, VSWH = 0 V, unless otherwise specified) Supply PWM input DISBL# input LSDBL# input Thermal warning Thermal shutdown 5V regulator Note: Item VCIN start threshold VCIN shutdown threshold UVLO hysteresis VCIN operating current Symbol VH VL dUVL ICIN Min 7.0 6.6 — — Typ 7.4 7.0 0.4 63 Max 7.8 7.4 — — Units V V V mA VCIN disable current ICIN-DISBL — — 800 A PWM input high level VH-PWM 2.6 — — V PWM input low level PWM input resistance PWM input tri-state range VL-PWM RIN-PWM VIN-tri Shutdown hold-off time Enable level Disable level Input current THDN on resistance Low-side activation level Low-side disable level tHOLD-OFF * VENBL VDISBL IDISBL 1 RTHDN * VLSDBLH VLSDBLL Input current Warning temperature Temperature hysteresis THWN on resistance ILSDBL TTHWN *1 THYS *1 RTHWN *1 THWN leakage current Shutdown temperature ILEAK 1 Tstdn * — 6.5 1.4 — 2.0 — — 0.2 2.0 — –52 100 — 0.2 — 130 — 12.5 — 150 — — 2.0 0.5 — — –26 115 15 0.5 — 150 0.8 25 2.0 — — 0.8 5.0 1.0 — 0.8 –12 130 — 1.0 1.0 — V k V ns V V A k V V A °C °C k A °C Output voltage Line regulation Vreg Vreg-line 4.95 –10 5.2 0 5.45 10 V mV VCIN = 12 V to 16 V Load regulation Vreg-load –10 0 10 mV Ireg = 0 to 10 mA 1 Test Conditions VH – VL fPWM = 1 MHz, Ton_pwm = 120 ns DISBL# = 0 V, PWM = LSDBL# = Open 3.3 V/5.0 V PWM interface PWM = 1 V 3.3 V/5.0 V PWM interface DISBL# = 1 V DISBL# = 0.2 V LSDBL# = 1 V Driver IC temperature THWN = 0.2 V THWN = 5 V Driver IC temperature 1. Reference values for design. Not 100% tested in production. R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Page 5 of 16 R2J20657NP Preliminary Typical Application Desktop/Server Application +12 V VCIN BOOT VIN THWN DISBL# Reg5V R2J20657NP PGND PWM CGND LSDBL# GH +5 V VSWH VCIN GL BOOT THWN VIN DISBL# Reg5V R2J20657NP PWM VSWH PGND CGND LSDBL# GH GL PWM1 PWM Control Circuit +1.3 V PWM2 PWM3 PWM4 VCIN BOOT THWN VIN DISBL# Reg5V R2J20657NP VSWH Power GND Signal GND PGND PWM CGND LSDBL# GH VCIN GL BOOT THWN VIN DISBL# Reg5V R2J20657NP PWM CGND LSDBL# GH R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 VSWH PGND GL Page 6 of 16 R2J20657NP Preliminary Pin Connection (1) Single 12 V Application 0.1 μF 0 to 10 Ω 1.0 μF VIN 12 V CGND 1.0 μF Low-side Disable Signal INPUT 8 7 6 5 4 3 2 1 GH CGND BOOT VCIN Reg5V LSDBL# 9 VIN 10 VSWH CGND 10 μF × 4 11 VIN PAD 12 13 PGND CGND PAD 14 VIN PWM 40 PWM INPUT DISBL# 39 Thermal Shutdown THWN 38 CGND 37 10 kΩ 15 VSWH VCIN GL 36 R2J20657NP 16 PGND VSWH 35 10 kΩ VSWH PAD 17 18 VCIN 34 33 Thermal Warning 20 31 21 Power GND 22 23 24 25 26 27 VSWH 32 PGND 19 28 29 30 0.45 μH Signal GND Vout PGND PGND (2) VCIN 5 V Application 0.1 μF 1.0 μF 0 to 10 Ω VIN 12 V Low-side Disable Signal INPUT 7 6 5 4 3 2 CGND BOOT VCIN Reg5V 11 VIN PAD 12 13 PGND CGND PAD 14 VIN 1 LSDBL# 8 GH 9 VIN 10 VSWH CGND 10 μF × 4 5.0 V External Power Supply PWM 40 PWM INPUT DISBL# 39 Thermal Shutdown THWN 38 CGND 37 10 kΩ 15 VSWH 5V GL 36 R2J20657NP 16 PGND VSWH 35 10 kΩ VSWH PAD 17 18 5V 34 33 Thermal Warning 20 31 21 Power GND Signal GND 22 23 24 25 26 27 VSWH 32 PGND 19 28 29 30 0.45 μH Vout PGND R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 PGND Page 7 of 16 R2J20657NP Preliminary Test Circuit Vinput A IIN V VIN Vcont A ICIN VCIN V VCIN BOOT DISBL# VIN R2J20657NP Reg5V VSWH LSDBL# 5 V pulse PWM CGND Note: PIN = IIN × VIN + ICIN × VCIN POUT = IO × VO Efficiency = POUT / PIN PLOSS(DrMOS) = PIN – POUT Ta = 27°C R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 PGND GH Electric load IO GL Averaging Output Voltage Averaging V VO circuit Page 8 of 16 R2J20657NP Preliminary Typical Data Power Loss vs. Output Current Power Loss vs. Input Voltage 1.8 8 VCIN = Reg5V = 5 V VIN = 12 V 1.7 VOUT = 1.3 V 1.6 fPWM = 600 kHz 7 VCIN = Reg5V = 5 V Normalized Power Loss @ VIN = 12 V Power Loss (W) VOUT = 1.3 V f = 600 kHz 6 LPWM = 0.45 μH 5 4 3 2 L = 0.45 μH 1.5 IOUT = 25 A 1.4 1.3 1.2 1.1 1.0 0.9 1 0 0.8 0 5 10 15 20 25 30 35 0.7 40 4 6 8 Output Current (A) 12 14 16 Input Voltage (V) Power Loss vs. Switching Frequency Power Loss vs. Output Voltage 1.8 1.8 VIN = 12 V VIN = 12 V 1.7 VCIN = Reg5V = 5 V 1.6 VOUT = 1.3 V L = 0.45 μH 1.5 IOUT = 25 A 1.4 1.3 1.2 1.1 1.0 Normalized Power Loss @ fPWM = 600 kHz 1.7 VCIN = Reg5V = 5 V 1.6 fPWM = 600 kHz Normalized Power Loss @ VOUT = 1.3 V 10 L = 0.45 μH 1.5 IOUT = 25 A 1.4 1.3 1.2 1.1 1.0 0.9 0.9 0.8 0.8 0.7 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 0.7 250 Output Voltage (V) R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 500 750 1000 1250 Switching Frequency (kHz) Page 9 of 16 R2J20657NP Preliminary Typical Data (cont.) Power Loss vs. Output Inductance Power Loss vs. VCIN 1.8 1.8 VIN = 12 V VIN = 12 V 1.7 VOUT = 1.3 V 1.6 fPWM = 600 kHz fPWM = 600 kHz Normalized Power Loss @ VCIN = Reg5V = 5 V Normalized Power Loss @ L = 0.45 μH 1.7 VCIN = Reg5V = 5 V 1.6 VOUT = 1.3 V 1.5 IOUT = 25 A 1.4 1.3 1.2 1.1 1.0 L = 0.45 μH 1.5 IOUT = 25 A 1.4 1.3 1.2 1.1 1.0 0.9 0.9 0.8 0.8 0.7 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.7 4.5 5.0 5.5 6.0 VCIN = Reg5V (V) Output Inductance (μH) Average ICIN vs. Switching Frequency 90 VIN = 12 V Average ICIN (mA) 80 VCIN = Reg5V = 5 V 70 VOUT = 1.3 V L = 0.45 μH IOUT = 0 A 60 50 40 30 20 10 250 500 750 1000 1250 Switching Frequency (kHz) R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Page 10 of 16 R2J20657NP Preliminary Description of Operation The DrMOS multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. Since the parasitic inductance between each chip is extremely small, the module is highly suitable for use in buck converters to be operated at high frequencies. The control timing between the high-side MOS FET, lowside MOS FET, and driver is optimized so that high efficiency can be obtained at low output-voltage. VCIN & DISBL# The VCIN pin is connected to the UVL (under-voltage lockout) module, so that the built-in 5 V regulator is disabled as long as VCIN is 7.4 V or less. On cancellation of UVL, the built-in 5 V regulator remains enabled until the UVL input is driven to 7.0 V or less. The built-in 5 V regulator is a series regulator with temperature compensation. A ceramic capacitor with a value of 0.1 F or more must be connected between the CGND plane and the Reg5V pin. The output of 5 V regulator is monitored by the internal Supervisor circuits. When the Supervisor detects this output is more than 4.3 V (typ.), the driver state becomes active (figure 1.1). Supervisor circuit has hysteresis and its shutdown level of Supervisor is 3.8 V (typ.). Figure 1.2 shows the application when the external 5 V regulator is used. When the Reg5V pin is applied into external 5 V, the Supervisor can activate the driver. In this application usage, VCIN should be connected to Reg5V. The signal on pin DISBL# also enables or disables the circuit. When UVL disables the circuit, the built-in 5 V regulator does not operate, but when the signal on DISBL# disables the circuit, only output-pulse generation is terminated, and the 5 V regulator is not disabled. Voltages from –0.3 V to VCIN+0.3 V can be applied to the DISBL# pin, so on/off control by a logic IC or the use of a resistor, etc., to pull the DISBL# line up to VCIN are both possible. VCIN L H H H DISBL#  L H Open Reg5V 0 Active Active Active 12 V Driver State Disable (GL, GH = L) Disable (GL, GH = L) Active Disable (GL, GH = L) VCIN > 7.4 V VCIN VCIN 5V IN Reg5V UVL & 5 V Regulator To Internal Logic OUT OUT IN UVL & 5 V Regulator Reg5V External 5 V To Internal Logic Supervisor Figure 1.1 Typical 12 V Input Application (Activate Built-in 5 V Regulator) R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Supervisor Figure 1.2 External 5 V Application Page 11 of 16 R2J20657NP Preliminary PWM & LSDBL# The PWM pin is the signal input pin for the driver chip. When the PWM input is high, the gate of the high-side MOS FET (GH) is high and the gate of the low-side MOS FET (GL) is low. PWM L H GH L H GL H L The LSDBL# pin is the Low Side Gate Disable pin for "Discontinuous Conduction Mode (DCM)" when LSDBL# is low. Figure 2 shows the Typical high-side and low-side gate switching and Inductor current (IL) during "Continuous Conduction Mode (CCM)" and low-side gate disabled when asserting LSDBL# signal. This pin is internally pulled up to Reg5V with 160 k resistor. When low-side disable function is not used, keep this pin open or pulled up to VCIN. CCM Operation (LSDBL# = "H" or Open mode) IL GH GL Figure 2.1 Typical Signals during CCM DCM Operation (LSDBL# = "L") IL 0A GH GL Figure 2.2 Typical Signals during DCM R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Page 12 of 16 R2J20657NP Preliminary The PWM input is TTL level and has hysteresis. When the signal route from the control IC is high impedance, the tristate function turns off the high- and low-side MOS FETs. This function operates when the PWM input signal stays in the input hysteresis window for 150 ns (typ.). After the tri-state mode has been entered and GH and GL have become low, a PWM input voltage of 2.6 V or more is required to make the circuit return to normal operation. 150 ns (tHOLD-OFF) 150 ns (tHOLD-OFF) 2.0 V PWM 1.4 V GH GL 150 ns (tHOLD-OFF) 150 ns (tHOLD-OFF) 2.0 V PWM 1.4 V GH GL Figure 3 PWM Shutdown-Hold Time Signal R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Page 13 of 16 R2J20657NP Preliminary The equivalent circuit for the PWM-pin input is shown in the next figure. M1 is in the ON state during normal operation; after the PWM input signal has stayed in the hysteresis window for 150 ns (typ.) and the tri-state detection signal has been driven high, the transistor M1 is turned off. When VCIN is powered up, M1 is started in the OFF state regardless of PWM Low or Open state. After PWM is asserted high signal, M1 becomes ON and shifts to normal operation. Reg5V M1 25 k PWM Pin Tri-state detection signal Input Logic To internal control 12.5 k Figure 4 Equivalent Circuit for the PWM-pin Input THWN & THDN This device has two level thermal detection, one is thermal warning and the other is thermal shutdown function. This Thermal Warning feature is the indication of the high temperature status. THWN is an open drain logic output signal and need to connect a pull-up resistor (ex.51 k) to THWN for Systems with the thermal warning implementation. When the chip temperature of the internal driver IC becomes over 115°C, Thermal warning function operates. This signal is only indication for the system controller and does not disable DrMOS operation. When thermal warning function is not used, keep this pin open. "H" THWN output Logic Level "L" Thermal warning Normal operating 100 115 TIC (°C) Figure 5 THWN Trigger Temperature R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Page 14 of 16 R2J20657NP Preliminary THDN is an internal thermal shutdown signal when driver IC becomes over 150°C. This function makes High-Side MOS FET and Low-Side MOS FET turn off for the device protection from abnormal high temperature situation and at the same time DISBL# pin is pulled low internally to give notice to the system controller. Once thermal shutdown function operates, driver IC keeps DISBL# pin pulled low until VCIN becomes under UVL level (or under supervisor shutdown level). Figure 6 shows the example of two types of DISBL# connection with the system controller signal. Driver IC Temp. < 150°C > 150°C Driver Chip Status Enable (GL, GH = "Active") Shutdown (GL, GH = "L") 5V To Internal Logic 10 k DISBL# 2 μA To shutdown signal To Internal Logic 10 k DISBL# 2 μA Thermal Shutdown Detection Figure 6.1 THDN Signal to the System Controller ON/OFF signal Thermal Shutdown Detection Figure 6.2 ON/OFF Signal from the System Controller MOS FET The MOS FETs incorporated in R2J20657NP are highly suitable for synchronous-rectification buck conversion. For the high-side MOS FET, the drain is connected to the VIN pin and the source is connected to the VSWH pin. For the lowside MOS FET, the drain is connected to the VSWH pin and the source is connected to the PGND pin. R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Page 15 of 16 R2J20657NP Preliminary Package Dimensions JEITA Package Code P-VQFN40-6x6-0.50 RENESAS Code PVQN0040KC-A Previous Code ⎯ MASS[Typ.] 0.10g NOTE) b1,c1: DIMENSION BEFORE PLATING HD 30pin 21pin 2.2 2.0 D 21pin 30pin 20pin 31pin 31pin E HE 2.0 0.2 0.7 2.2 40pin 11pin 40pin 3.1 10pin 1pin 0.2 0.2 ZD 2.2 ZE e 10pin 2.2 1pin c1 ×M S Lp A1 b1 A S b c S Outer lead detail y S Reference Dimension in Millimeters Symbol Min Nom Max D 6.00 E 6.00 A 0.95 A1 0.005 b 0.17 0.22 0.27 b1 0.20 e 0.50 Lp 0.40 0.50 0.60 x y 0.05 y1 t HD 6.20 HE 6.20 ZD 0.75 ZE 0.75 c 0.17 0.22 0.27 c1 0.20 Ordering Information Part Name R2J20657NP#G3 R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Quantity 2500 pcs Shipping Container Taping Reel Page 16 of 16 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2011 Renesas Electronics Corporation. All rights reserved. Colophon 1.0
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