R2J25953-00

Preliminary Datasheet R2J25953 H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET Description The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package. R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Features  For Automotive application  Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.)  Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.  Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcurrent Detection.  Built-in diagnostic function.  Built-in cross-conduction protection.  Small Surface mounting package: HSOP-36 Block Diagram Reverce battery protection device VBAT Vz Cp M VB1 VBS1 VCC VBS2 VB2 Pch MOS Pch MOS Dr. LVI, OVD Overcurrent detection Dr. OUT1 TSD OUT2 Dr. Nch MOS Logic Dr. Nch MOS PGND1 PWM INA INB DIAG LGND V30 C1 PGND2 Pull-up in the Microcomputer R1 power supply Microcomputer R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 1 of 16 R2J25953 Preliminary Outline OUT1 NC VBS1 GND V30 GND VBS2 VCC NC OUT2 NC VB1 NC VB2 19 36 TAB1 TAB3 TAB2 OUT1 1 18 NC OUT1 PWM INA INB GND LGND GND DIAG NC OUT2 NC Pin Description Pin No. 1 to 3 4 5 6 7 8 9 10 11 12 13 14 15 16 to 18 19 to 21 Pin name PGND1 NC OUT1 PWM INA INB GND LGND GND DIAG NC OUT2 NC PGND2 VB2 Description Power GND1 No connect Internally corrected to TAB1 PWM input A input B input Internally corrected to TAB3 IC GND Internally corrected to TAB3 Diagnostic output (open drain) No connect Internally corrected to TAB2 No connect Power GND2 MOS FET power supply 2 Pin No. 22 23 24 25 26 27 28 29 30 31 32 33 34 to 36 TAB1 TAB2 TAB3 Pin name NC OUT2 NC VCC VBS2 GND V30 GND VBS1 NC OUT1 NC VB1 OUT1 OUT2 GND Description No connect Internally corrected to TAB2 No connect IC power supply VB2 sense Internally corrected to TAB3 IC bias voltage (3.3 V) Internally corrected to TAB3 VB1 sense No connect Internally corrected to TAB1 No connect MOS FET power supply 1 MOS FET output 1 MOS FET output 2 IC tab GND R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 PGND1 PGND2 OUT2 Page 2 of 16 R2J25953 Preliminary Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Input voltage Diag voltage Output current Diag current Junction temperature Storage temperature Power temperature Symbol VB Vin Vdiag Iout Idiag Tj Tstg Pt Ratings 18 –0.3 to VB –0.3 to VB 50 5 –40 to +150 –55 to +150 40 Unit V V V A mA C C W Note 1 2 3 3 4 Notes: 1. 28 V at 25C, 1 min. 40 V at 25C, 1 sec. 2. Applies to INA, INB, and PWM. Clamps it with 19 V typ. 3. Applies to DIAG 4. One element operation: Tc = 25C R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 3 of 16 R2J25953 Preliminary Electrical Characteristics (Ta = 25°C, VB = VCC = 12 V) Item Supply current VB MOS Input current Static High-side resistance Static Low-side resistance Off state current Input current High threshold Low threshold Delay time Rise time Fall time DIAG Symbol Icc0 Icc IinvbL RonH RonL Ioff IinL IinH Vthin Vtlin tpLH tpHL tr tf VDiag Min — — — — — — — — 3.0 — — — — — — Typ 30 3.5 — 9 7 10 — — — — 1.5 3.0 1.0 1.0 0.4 Max 50 10 1 16 11 20 10 10 — 1.5 4.0 6.0 3.0 3.0 0.6 10 — — 39.1 28.7 5.6 0.7 — 20 1.3 1.3 Unit A mA A m m A A A V V s s s s V A °C °C V V V V A s V V Condition Standby ACTIVE Standby Iout = 15 A Pulse test Iout = 15 A Pulse test Vin = 0 V Vin =VB Application terminal VCC VB1/VB2 Note 1 1 1 IN INA/INB /PWM OUT/IN (PWM) OUT I = 2 mA, DIAG = Low Vdiag = 0 V OUT, PWM OUT1/2 DIAG 2 Output voltage Leak current IDiag — — Shut-down Tsd 150 175 temperature Hysteresis Thys 7 25 OVD Shut-down VtvH 28.9 34 voltage Return voltage VtvL 21.3 25 LVI Return voltage VRLVI 5.0 5.35 Hysteresis VHLVI 0.3 0.5 Overcurrent Shut-down IcL 35 — detection current Detection time tcL 60 10 MOS FET Pch forward VDFp — 1.0 Body-diode voltage Nch forward VDFn — 1.0 voltage Notes: 1. Refer to truth table. 2. Refer to the input condition to the truth table. TSD PWM 50% 3 VCC VCC OUT1/2 IF = 50 A, Pulse test 50% tpLH tpHL 90% 90% 50% 10% OUT1 (OUT2) 10% 50% tr tf 3. It is a design guaranteed value, and it doesn't apply to the final test. R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 4 of 16 R2J25953 Preliminary Truth table The operation of OUT1, OUT2, and DIAG is shown in the following. PWM High Input INA High Status INB LVI OVD Overcurrent detection off off off off off off off Protection circuit doesn't operate on x x x off on x x off x on x x x on TSD OUT1 High High Low Low Hi-z Hi-z Low Low Hi-z Hi-z Hi-z (Latch) Hi-z Output OUT2 High Low High Low Hi-z Low Hi-z Low Hi-z Hi-z Hi-z (Latch) Hi-z DIAG High High High High High High High High High Low Low (Latch) Low ACTIVE State High Low Low High Low Low High High Low Low High Low Excluding All = Low At least one of PWM, INA, and INB is high. STANDBY LVI TSD Overcurrent detection OVD off Notes 1. x: Regardless of High, Low, on and off. 2. Protect circuit off = undetection on = detection 3. State of pin OUT Low: Nch MOS FET ON, High: Pch MOS FET ON, Hi-z: Nch and Pch MOS FET OFF 4. The latch of overcurrent detection is released when LVI = on or INA = INB = Low. External Parts List Parts No. Cp R1 C1 Recommended value 10 F > 10 k 0.033 F Purpose Power supply bypass capacitor Pull up Pin DIAG Pin V30 bypass capacitor R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 5 of 16 R2J25953 Preliminary Equivalent Circuit Pin name PGND1 PGND2 Pin No. 1, 2, 3, 16, 17, 18 Equivalent circuit V30 OUT1 OUT2 LGND Nch MOS PGND1 PGND2 OUT1 OUT2 5, 32, TAB1 14, 23, TAB2 Pch MOS VB1 VB2 OUT1 OUT2 Nch MOS PGND1 PGND2 PWM INA INB 6 7 8 VCC V30 PWM INA INB Vth Vtl to Driver LGND DIAG 12 DIAG LGND VB1 VB2 34, 35, 36 19, 20, 21 VCC Pch MOS VB1 VB2 R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 6 of 16 R2J25953 Pin name VCC LGND Pin No. 25 10 Equivalent circuit Preliminary VCC LGND VBS1 VBS2 30 26 VB1 VB2 VBS1 VBS2 VCC V30 28 VCC V30 LGND R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 7 of 16 R2J25953 Preliminary Main Characteristics ICC0 vs. VCC 80 Standby Mode 8 ICC vs. VCC Enable Mode 60 6 ICC0 (μA) ICC (mA) 40 4 20 2 0 0 4 8 12 16 0 0 4 8 12 16 VCC (V) VCC (V) Ron Low Side vs. Iout 12 10 VCC = 12 V 16 14 12 Ron High Side vs. Iout VCC = 12 V RonH (mΩ) RonL (mΩ) 8 6 4 2 0 5 10 8 6 4 2 10 15 20 25 30 0 5 10 15 20 25 30 Iout (A) Iout (A) Turn-on Delay Time (tpLH) vs. Iout 6 5 4 3 2 1 0 0 PWM = 20 kHz, INA = High, INB = Low, VCC = 12 V Turn-off Delay Time (tpHL) vs. Iout 6 5 4 3 2 1 0 0 PWM = 20 kHz, INA = High, INB = Low, VCC = 12 V tpLH (μs) 2 4 6 8 10 12 tpHL (μs) 2 4 6 8 10 12 Iout (A) Iout (A) R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 8 of 16 R2J25953 Rise Time vs. Iout 3 2.5 2 PWM = 20 kHz, INA = High, INB = Low, VCC = 12 V Preliminary Fall Time vs. Iout 3 2.5 2 PWM = 20 kHz, INA = High, INB = Low, VCC = 12 V tr (μs) 1.5 1 0.5 0 0 tf (μs) 2 4 6 8 10 12 1.5 1 0.5 0 0 2 4 6 8 10 12 Iout (A) Iout (A) ICC0 vs. Ta 45 40 35 30 VCC = 12 V, Standby Mode ICC vs. Ta 8 7 6 VCC = 12 V, Enable Mode ICC0 (μA) 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 175 ICC (mA) 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150 175 Ta (°C) Ta (°C) Over-Voltage Detection vs. Ta 40 35 30 40 35 30 Over-Voltage Return vs. Ta VtvH (V) 25 20 15 10 0 -50 -25 0 VtvL (V) 25 50 75 100 125 150 175 25 20 15 10 0 -50 -25 0 25 50 75 100 125 150 175 Ta (°C) Ta (°C) R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 9 of 16 R2J25953 Low-Voltage Inhibit Return vs. Ta 6 5.8 5.6 5.4 0.6 5.2 5 4.8 4.6 4.4 4.2 4 0 -50 -25 0 25 50 75 100 125 150 175 0.3 -50 -25 0 Preliminary Low-Voltage Inhibit Hysteresis vs. Ta 0.7 VRLVI (V) VHLVI (V) 0.5 0.4 25 50 75 100 125 150 175 Ta (°C) High Level Input Voltage vs. Ta (PWM/INA/INB) 4 3.5 3 VCC = 7 V 4 3.5 3 Ta (°C) Low Level Input Voltage vs. Ta (PWM/INA/INB) VCC = 7 V Vthin (V) 2.5 2 1.5 1 -40 -20 0 20 40 60 80 100 120140 160 Vtlin (V) 2.5 2 1.5 1 -40 -20 0 20 40 60 80 100 120140 160 Ta (°C) High Level Input Voltage vs. Ta (PWM/INA/INB) 4 3.5 3 VCC = 16 V 4 3.5 3 Ta (°C) Low Level Input Voltage vs. Ta (PWM/INA/INB) VCC = 16 V Vthin (V) 2.5 2 1.5 1 -40 -20 0 20 40 60 80 100 120140 160 Vtlin (V) 2.5 2 1.5 1 -40 -20 0 20 40 60 80 100 120140 160 Ta (°C) Ta (°C) R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 10 of 16 R2J25953 Ron High side vs. Ta 20 18 16 VCC = 12 V, ILoad = 15 A 16 14 12 Preliminary Ron Low side vs. Ta VCC = 12 V, ILoad = 15 A RonH (mΩ) 14 RonL (mΩ) Ta (°C) 12 10 8 6 4 2 0 -40 -20 0 20 40 60 80 100 120140 160 10 8 6 4 2 0 -40 -20 0 20 40 60 80 100 120140 160 Ta (°C) Overcurrent Detection vs. Ta (Short to GND) 100 90 80 VCC = 12 V Overcurrent Detection vs. Ta (Short to VB) 100 90 80 VCC = 12 V IcL (A) 70 60 50 40 30 -40 -20 0 20 40 60 80 100 120140 160 IcL (A) Ta (°C) Turn-on Delay Time (tpLH) vs. Ta 70 60 50 40 30 -40 -20 0 20 40 60 80 100 120140 160 Ta (°C) Turn-off Delay Time (tpHL) vs. Ta 5 PWM = 20 kHz, INA = High, INB = Low, Io = 5 A 5 PWM = 20 kHz, INA = High, INB = Low, Io = 5 A 4 4 tpLH (μs) 3 tpHL (μs) Ta (°C) 3 2 2 1 1 0 -40 -20 0 20 40 60 80 100 120140 160 0 -40 -20 0 20 40 60 80 100 120140 160 Ta (°C) R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 11 of 16 R2J25953 Rise Time vs. Ta 3 2.5 2 PWM = 20 kHz, INA = High, INB = Low, Io = 5 A Preliminary Fall Time vs. Ta 3 2.5 2 PWM = 20 kHz, INA = High, INB = Low, Io = 5 A tr (μs) 1.5 1 0.5 0 -40 -20 0 20 40 60 80 100 120140 160 tf (μs) 1.5 1 0.5 0 -40 -20 0 20 40 60 80 100 120140 160 Ta (°C) Ta (°C) Recommended Wiring Pattern LOAD VB C1 Dz NC OUT1 NC VBS1 GND V30 GND VBS2 VCC NC OUT2 NC VB1 TAB1 (OUT1) VB2 TOP VIEW PGND1 PGND2 Cp GND Notes 1. 2. 3. 4. VB1 and VB2 will diverge soon because of the voltage sensing terminal and it wires for VBS1 and VBS2. GND side wiring of C1 must diverge from the LGND side. Insertion examination of use conditions about the reverse battery protection device and Dz. The reverse battery protection please choose the parts such as MOSFET or Schottky diode by use. R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 NC OUT1 PWM INA INB GND LGND GND DIAG NC OUT2 NC TAB2 (OUT2) Page 12 of 16 R2J25953 Preliminary Operational Mode When PWM is controlled, recovery control can be selected because of the low loss. However, please note that reversebrake hangs at acceleration of the motor. Operational mode Example 1. Forward mode (Recovery control) INA = PWM on/off INB = Low PWM = High OUT1 Circuit operational VB1 VB2 ON ⇔ OFF (Synchronizes with PWM) Io M OUT2 OFF OFF ⇔ ON (Synchronizes with PWM) ON Example 2. Reverse mode (Recovery control) INA = Low INB = PWM on/off PWM = High OFF VB1 VB2 Io OUT1 M OUT2 ON ⇔ OFF (Synchronizes with PWM) ON OFF ⇔ ON (Synchronizes with PWM) Example 3. Forward mode (No recovery control) INA = High INB = Low PWM = PWM on/off VB1 VB2 ON ⇔ OFF (Synchronizes with PWM) OUT1 OFF Io M OUT2 OFF ON Example 4. Reverse mode (No recovery control) INA = Low INB = High PWM = PWM on/off OFF VB1 VB2 Io OUT1 M OUT2 ON ⇔ OFF (Synchronizes with PWM) ON OFF R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 13 of 16 R2J25953 Preliminary Timing Chart (Normal operation) Standby (INA,INB,PWM = Low) Forward (recovery) PWM Reverce (recovery) PWM Forward PWM Reverce PWM Standby (INA, INB, PWM = Low) INA INB PWM OUT1 High-side VGS OUT1 Low-side VGS VB GND VB OUT1 GND Vf OUT2 High-side VGS OUT2 Low-side VGS VB GND VB OUT2 GND Vf R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 14 of 16 R2J25953 Preliminary Timing Chart (Protection operation) Overcurrent detection INA INB (Low) OVD TSD LVI PWM VtvH VtvL VB IcL VHLVI VRLVI IOUT tcL TSD Thys Tj OUT1 OUT2 Hi-z Hi-z Hi-z Hi-z Hi-z Hi-z Hi-z Hi-z DIAG Latch cancel R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 15 of 16 R2J25953 Preliminary Package Dimensions JEITA Package Code P-HSOP36-11x14.1-0.65 RENESAS Code PRSP0036JC-A Previous Code — MASS[Typ.] 1.96g NOTE) 1.DIMENSION"*1"AND"*2"DO NOT INCLUDE MOLD FLASH. 2.DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. 15.9± 0.1 *1 D 19 36 12.10 2.40 2.40 0.80 0.80 Detail F 7.0± 0.15 8.2 *2 7.5 HE E Reference Symbol Dimension in Millimeters 1 e *3 18 ×M bp bp S A b1 yS 0.20 A1 Terminal cross section L Detail F D E A2 A1 A bp b1 c c1 θ HE e x y Z L L1 Min Nom Max 13.95 14.1 14.25 10.9 11.0 11.1 0.01 0.27 0.26 0.28 0.26 0° 14.0 0.05 0.32 0.30 0.32 0.30 14.2 0.65 0.10 3.6 0.37 0.34 0.37 0.34 8° 14.4 0.25 0.1 0.65 0.8 0.95 3.35 1.28 1.26 1.71 c1 c Ordering Information Part No. R2J25953-00 Quantity 700 pcs/ box Shipping Container Tray R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 θ Page 16 of 16 Notice 1. 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