Datasheet
RL78/L13
R01DS0168EJ0210
Rev.2.10
Aug 12, 2016
RENESAS MCU
Integrated LCD controller/driver, True Low Power Platform (as low as 112.5 μA/MHz, and 0.61 μA for RTC + LVD),
1.6 V to 5.5 V operation, 16 to 128 Kbyte Flash, 31 DMIPS at 24 MHz, for All LCD Based Applications
1. OUTLINE
1.1 Features
Ultra-low power consumption technology
• VDD = single power supply voltage of 1.6 to 5.5 V which can
operate a 1.8 V device at a low voltage
• HALT mode
• STOP mode
• SNOOZE mode
Serial interface
• CSI: 2 channels
• UART/UART (LIN-bus supported): 3, 4 channels/1 channel
• I2C/Simplified I2C communication: 1 channel/2 channels
RL78 CPU core
• CISC architecture with 3-stage pipeline
• Minimum instruction execution time: Can be changed from high
speed (0.04167 µs: @ 24 MHz operation with high-speed onchip oscillator) to ultra-low speed (30.5 µs: @ 32.768 kHz
operation with subsystem clock)
• Address space: 1 MB
• General-purpose registers: (8-bit register × 8) × 4 banks
• On-chip RAM: 1 to 8 KB
Code flash memory
• Code flash memory: 16 to 128 KB
• Block size: 1 KB
• Prohibition of block erase and rewriting (security function)
• On-chip debug function
• Self-programming (with boot swap function/flash shield window
function)
Data flash memory
• Data flash memory: 4 KB
• Back ground operation (BGO): Instructions can be executed
from the program memory while rewriting the data flash memory.
• Number of rewrites: 1,000,000 times (TYP.)
• Voltage of rewrites: VDD = 1.8 to 5.5 V
High-speed on-chip oscillator
• Select from 48 MHz, 24 MHz, 16 MHz, 12 MHz, 8 MHz, 6 MHz,
4 MHz, 3 MHz, 2 MHz, and 1 MHz
• High accuracy: +/-1.0 % (VDD = 1.8 to 5.5 V, TA = -20 to +85°C)
Operating ambient temperature
• TA = -40 to +85°C (A: Consumer applications)
• TA = -40 to +105°C (G: Industrial applications)
Power management and reset function
• On-chip power-on-reset (POR) circuit
• On-chip voltage detector (LVD) (Select interrupt and reset from
14 levels)
DMA (Direct Memory Access) controller
• 4 channels
• Number of clocks during transfer between 8/16-bit SFR and
internal RAM: 2 clocks
Multiplier and divider/multiply-accumulator
• 16 bits × 16 bits = 32 bits (Unsigned or signed)
• 32 bits ÷ 32 bits = 32 bits (Unsigned)
• 16 bits × 16 bits + 32 bits = 32 bits (Unsigned or signed)
Timer
• 16-bit timer: 8 channels (with remote control output function)
• 16-bit timer KB20 (IH): 1 channel
(IH-only PWM output function)
• 12-bit interval timer: 1 channel
• Real-time clock 2: 1 channel (calendar for 99 years, alarm
function, and clock correction function)
• Watchdog timer: 1 channel (operable with the dedicated lowspeed on- chip oscillator)
A/D converter
• 8/10-bit resolution A/D converter (VDD = 1.6 to 5.5 V)
• Analog input: 9 to 12 channels
• Internal reference voltage (1.45 V) and temperature sensorNote 1
Comparator
• 2 channels
• Operation mode: Comparator high-speed mode, comparator
low-speed mode, or window mode
• External reference voltage and internal reference voltage are
selectable
LCD controller/driver
• Segment signal output: 36 (32)Note 2 to 51 (47)Note 2
• Common signal output: 4 (8)Note 2
• Internal voltage boosting method, capacitor split method, and
external resistance division method are switchable
I/O port
• I/O port: 49 to 65 (N-ch open drain I/O [withstand voltage of 6
V]: 2, N-ch open drain I/O [VDD withstand voltage]: 12 to 18)
• Can be set to N-ch open drain, TTL input buffer, and on-chip
pull-up resistor
• Different potential interface: Can connect to a 1.8/2.5/3 V
device
• On-chip key interrupt function
• On-chip clock output/buzzer output controller
Others
• On-chip BCD (binary-coded decimal) correction circuit
Notes 1. Can be selected only in HS (high-speed main) mode
2. The values in parentheses are the number of signal
outputs when 8 com is used.
Remark
The functions mounted depend on the product. See
1.6 Outline of Functions.
* There are differences in specifications between every product.
Please refer to specification for details.
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RL78/L13
1. OUTLINE
ROM, RAM capacities
Flash ROM
Data Flash
RAM
128 KB
4 KB
96 KB
4 KB
6 KB
64 KB
4 KB
4 KB
R5F10WLE
R5F10WME
48 KB
4 KB
2 KB
R5F10WLD
R5F10WMD
32 KB
4 KB
1.5 KB
R5F10WLC
R5F10WMC
16 KB
4 KB
1 KB
R5F10WLA
R5F10WMA
8 KB
Note
RL78/L13
64 pins
80 pins
R5F10WLG
R5F10WMG
R5F10WLF
R5F10WMF
Note This is about 7 KB when the self-programming function and data flash function are used. (For details, see
CHAPTER 3 in the RL78/L13 User’s Manual.)
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RL78/L13
1. OUTLINE
1.2 List of Part Numbers
Figure 1-1. Part Number, Memory Size, and Package of RL78/L13
Part No.
R 5 F 1 0 W L E A x x x F B #30
Packaging specification
#30 : Tray (LFQFP, LQFP)
#50 : Embossed Tape (LFQFP, LQFP)
Package type:
FA : LQFP, 0.65 mm pitch
FB : LFQFP, 0.50 mm pitch
ROM number (Omitted with blank products)
Fields of application:
A : Consumer applications, TA = −40˚C to +85˚C
G : Industrial applications, TA = −40˚C to +105˚C
ROM capacity:
A : 16 KB
C : 32 KB
D : 48 KB
E : 64 KB
F : 96 KB
G : 128 KB
Pin count:
L : 64-pin
M : 80-pin
RL78/L13 group
Memory type:
F : Flash memory
Renesas MCU
Renesas semiconductor product
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RL78/L13
Pin Count
1. OUTLINE
Package
Data Flash
Fields of
Ordering Part Number
ApplicationNote
64 pins
64-pin plastic LQFP
Mounted
A
R5F10WLAAFA#30, R5F10WLAAFA#50, R5F10WLCAFA#30,
(12 × 12 mm, 0.65
R5F10WLCAFA#50, R5F10WLDAFA#30, R5F10WLDAFA#50,
mm pitch)
R5F10WLEAFA#30, R5F10WLEAFA#50, R5F10WLFAFA#30,
R5F10WLFAFA#50, R5F10WLGAFA#30, R5F10WLGAFA#50
64-pin plastic LFQFP
Mounted
A
R5F10WLAAFB#30, R5F10WLAAFB#50, R5F10WLCAFB#30,
(10 × 10 mm, 0.5
R5F10WLCAFB#50, R5F10WLDAFB#30, R5F10WLDAFB#50,
mm pitch)
R5F10WLEAFB#30, R5F10WLEAFB#50, R5F10WLFAFB#30,
R5F10WLFAFB#50, R5F10WLGAFB#30, R5F10WLGAFB#50,
G
R5F10WLAGFB#30, R5F10WLAGFB#50, R5F10WLCGFB#30,
R5F10WLCGFB#50, R5F10WLDGFB#30, R5F10WLDGFB#50,
R5F10WLEGFB#30, R5F10WLEGFB#50, R5F10WLFGFB#30,
R5F10WLFGFB#50, R5F10WLGGFB#30, R5F10WLGGFB#50
80 pins
80-pin plastic LQFP
Mounted
A
R5F10WMAAFA#30, R5F10WMAAFA#50, R5F10WMCAFA#30,
(14 × 14 mm, 0.65
R5F10WMCAFA#50, R5F10WMDAFA#30, R5F10WMDAFA#50,
mm pitch)
R5F10WMEAFA#30, R5F10WMEAFA#50, R5F10WMFAFA#30,
R5F10WMFAFA#50, R5F10WMGAFA#30, R5F10WMGAFA#50
80-pin plastic LFQFP
Mounted
A
R5F10WMAAFB#30, R5F10WMAAFB#50, R5F10WMCAFB#30,
(12 × 12 mm, 0.5
R5F10WMCAFB#50, R5F10WMDAFB#30, R5F10WMDAFB#50,
mm pitch)
R5F10WMEAFB#30, R5F10WMEAFB#50, R5F10WMFAFB#30,
R5F10WMFAFB#50, R5F10WMGAFB#30, R5F10WMGAFB#50,
G
R5F10WMAGFB#30, R5F10WMAGFB#50, R5F10WMCGFB#30,
R5F10WMCGFB#50, R5F10WMDGFB#30, R5F10WMDGFB#50,
R5F10WMEGFB#30, R5F10WMEGFB#50, R5F10WMFGFB#30,
R5F10WMFGFB#50, R5F10WMGGFB#30, R5F10WMGGFB#50
Note For the fields of application, see Figure 1-1 Part Number, Memory Size, and Package of RL78/L13.
Caution The ordering part numbers represent the numbers at the time of publication. For the latest ordering
part numbers, refer to the target product page of the Renesas Electronics website.
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RL78/L13
1. OUTLINE
1.3 Pin Configuration (Top View)
1.3.1 64-pin products
• 64-pin plastic LQFP (12 × 12 mm, 0.65 mm pitch)
P03/RxD2/SEG46/VCOUT0
P04/TxD2/SEG47/VCOUT1
P05/SCK10/SCL10/SEG48
P06/SI10/RxD1/SDA10/SEG49
P07/SO10/TxD1/(PCLBUZ0)/SEG50
COM0
COM1
COM2
COM3
COM4/SEG0
COM5/SEG1
COM6/SEG2
COM7/SEG3
P52/TI00/TO00/INTP1/SEG6
P53/INTP2/SEG7
P54/TI02/TO02/SEG8
• 64-pin plastic LFQFP (10 × 10 mm, 0.5 mm pitch)
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33
P02/INTP7/PCLBUZ0/SEG45
P01/(TI05)/(TO05)/INTP5/PCLBUZ1/SEG44
P00/SEG43/SO00/TxD0/TOOLTxD
P17/SEG42/SI00/RxD0/TOOLRxD/SDA00
P16/SEG41/SCK00/SCL00
P15/TI07/TO07/SEG40
P14/TI04/TO04/SEG39
P13/ANI25/SEG38
P12/ANI24/SEG37
P11/ANI23/SEG36
P10/ANI22/SEG35
P27/ANI21/SEG34
P26/ANI20/SEG33
P22/ANI16/SEG29
P21/ANI0/AVREFP
P20/ANI1/AVREFM
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
RL78/L13
(Top View)
1 2 3 4 5
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
P57/INTP6/SEG11
P70/KR0/SEG12
P74/KR4/SEG16/TKBO00
P75/KR5/SEG17/TKBO01-2
P76/KR6/SEG18/TKBO01-1
P77/KR7/SEG19/TKBO01-0
P30/TI03/TO03/SEG20/REMOOUT
P31/INTP3/RTC1HZ/SEG21
P32/TI01/TO01/SEG22
P33/INTP4/SEG23
P125/VL3/TI06/TO06
VL4
VL2
VL1
P126/CAPL/(TI04)/(TO04)
P127/CAPH/(TI03)/(TO03)/(REMOOUT)
6 7 8 9 10 11 12 13 14 15 16
P45/VREF0
P44/(SCK10)/(SCL10)/IVCMP0
P43/(INTP7)/(SI10)/(RxD1)/(SDA10)/IVCMP1
P42/TI05/TO05/(SO10)/(TxD1)/IVREF1
P40/TOOL0/(TI00)/(TO00)
RESET
P124/XT2/EXCLKS
P123/XT1
P137/INTP0
P122/X2/EXCLK
P121/X1
REGC
VSS
VDD
P60/SCLA0/(TI01)/(TO01)
P61/SDAA0/(TI02)/(TO02)
Caution Connect the REGC pin to VSS via a capacitor (0.47 to 1 μF).
Remarks 1. For pin identification, see 1.4 Pin Identification.
2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection
register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the
RL78/L13 User’s Manual.
.
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RL78/L13
1.3.2 80-pin products
• 80-pin plastic LQFP (14 × 14 mm, 0.65 mm pitch)
P04/TxD2/SEG47/VCOUT1
P05/SCK10/SCL10/SEG48
P06/SI10/RxD1/SDA10/SEG49
P07/SO10/TxD1/(PCLBUZ0)/SEG50
COM0
COM1
COM2
COM3
COM4/SEG0
COM5/SEG1
COM6/SEG2
COM7/SEG3
P50/SEG4
P51/SEG5
P52/TI00/TO00/INTP1/SEG6
P53/INTP2/SEG7
P54/TI02/TO02/SEG8
P55/INTP5/SEG9
P56/TI06/TO06/SEG10
P57/INTP6/SEG11
• 80-pin plastic LFQFP (12 × 12 mm, 0.5 mm pitch)
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41
P03/RxD2/SEG46/VCOUT0
P02/INTP7/PCLBUZ0/SEG45
P01/(TI05)/(TO05)/(INTP5)/PCLBUZ1/SEG44
P00/SEG43/SO00/TxD0/TOOLTxD
P17/SEG42/SI00/RxD0/TOOLRxD/SDA00
P16/SEG41/SCK00/SCL00
P15/TI07/TO07/SEG40
P14/TI04/TO04/SEG39
P13/ANI25/SEG38
P12/ANI24/SEG37
P11/ANI23/SEG36
P10/ANI22/SEG35
P27/ANI21/SEG34
P26/ANI20/SEG33
P25/ANI19/SEG32
P24/ANI18/SEG31
P23/ANI17/SEG30
P22/ANI16/SEG29
P21/ANI0/AVREFP
P20/ANI1/AVREFM
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
RL78/L13
(Top View)
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
P70/KR0/SEG12
P71/KR1/SEG13
P72/KR2/SEG14
P73/KR3/SEG15
P74/KR4/SEG16/TKBO00
P75/KR5/SEG17/TKBO01-2
P76/KR6/SEG18/TKBO01-1
P77/KR7/SEG19/TKBO01-0
P30/TI03/TO03/SEG20/REMOOUT
P31/INTP3/RTC1HZ/SEG21
P32/TI01/TO01/SEG22
P33/INTP4/SEG23
P34/RxD3/SEG24
P35/TxD3/SEG25
P125/VL3/(TI06)/(TO06)
VL4
VL2
VL1
P126/CAPL/(TI04)/(TO04)
P127/CAPH/(TI03)/(TO03)/(REMOOUT)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
P130/(SO00)/(TxD0)/SEG28
P47/(SI00)/(RxD0)/(SDA00)/SEG27
P46/(SCK00)/(SCL00)/SEG26
P45/IVREF0
P44/(SCK10)/(SCL10)/IVCMP0
P43/(INTP7)/(SI10)/(RxD1)/(SDA10)/IVCMP1
P42/TI05/TO05/(SO10)/(TxD1)/IVREF1
P41/(TI07)/(TO07)
P40/TOOL0/(TI00)/(TO00)
RESET
P124/XT2/EXCLKS
P123/XT1
P137/INTP0
P122/X2/EXCLK
P121/X1
REGC
VSS
VDD
P60/SCLA0/(TI01)/(TO01)
P61/SDAA0/(TI02)/(TO02)
1. OUTLINE
Caution Connect the REGC pin to VSS via a capacitor (0.47 to 1 μF).
Remarks 1. For pin identification, see 1.4 Pin Identification.
2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection
register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the
RL78/L13 User’s Manual.
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RL78/L13
1. OUTLINE
1.4 Pin Identification
PCLBUZ0, PCLBUZ1:
ANI0, ANI1,
Programmable Clock Output/
Buzzer Output
ANI16 to ANI25:
Analog Input
AVREFM:
Analog Reference Voltage
REGC:
Regulator Capacitance
Minus
REMOOUT:
Remote control Output
Analog Reference Voltage
RESET:
Reset
Plus
RTC1HZ:
Real-time Clock 2 Correction Clock
AVREFP:
(1 Hz) Output
CAPH, CAPL:
Capacitor for LCD
COM0 to COM7:
LCD Common Output
RxD0 to RxD3:
EXCLK:
EXCLKS:
Receive Data
External Clock Input
SCK00, SCK10, SCLA0: Serial Clock Input/Output
(Main System Clock)
SCL00, SCL10:
Serial Clock Output
External Clock Input
SDAA0, SDA00, SDA10: Serial Data Input/Output
(Subsystem Clock)
SEG0 to SEG50:
External Interrupt Input
LCD Segment Output
SI00, SI10:
Serial Data Input
IVCMP0, IVCMP1: Comparator Input
SO00, SO10:
Serial Data Output
IVREF0, IVREF1: Comparator Reference Input
TI00 to TI07:
Timer Input
KR0 to KR7:
Key Return
TO00 to TO07,
P00 to P07:
Port 0
TKBO00, TKBO01-0,
P10 to P17:
Port 1
TKBO01-1, TKBO01-2: Timer Output
P20 to P27:
Port 2
TOOL0:
Data Input/Output for Tool
P30 to P35:
Port 3
TOOLRxD, TOOLTxD:
Data Input/Output for External Device
P40 to P47:
Port 4
TxD0 to TxD3:
Transmit Data
P50 to P57:
Port 5
VCOUT0, VCOUT1:
Comparator Output
INTP0 to INTP7:
P60, P61:
Port 6
VDD:
Power Supply
P70 to P77:
Port 7
VL1 to VL4:
LCD Power Supply
P121 to P127:
Port 12
VSS:
Ground
P130, P137:
Port 13
X1, X2:
Crystal Oscillator (Main System Clock)
XT1, XT2:
Crystal Oscillator (Subsystem Clock)
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RL78/L13
1. OUTLINE
1.5 Block Diagram
1.5.1 64-pin products
TIMER ARRAY
UNIT0 (8ch)
TI00/TO00/P52
(TI00/TO00/P40)
ch0
TI01/TO01/P32
(TI01/TO01/P60)
ch1
TI02/TO02/P54
(TI02/TO02/P61)
ch2
TI03/TO03/P30
(TI03/TO03/P127)
ch3
TI04/TO04/P14
(TI04/TO04/P126)
ch4
TI05/TO05/P42
(TI05/TO05/P01)
ch5
TI06/TO06/P125
ch6
TI07/TO07/P15
RxD0/P17
ch7
REMOOUT/P30
(REMOOUT/P127)
TKBO00/P74, TKBO01-0/P77,
TKBO01-1/P76, TKBO01-2/P75
Remote Carrier
4
2
3
A/D CONVERTER
4
ANI0/P21, ANI1/P20
ANI16/P22,
ANI20/P26, ANI21/P27
ANI22/P10 to ANI25/P13
AVREFP/P21
AVREFM/P20
COMPARATOR
(2ch)
COMPARATOR0
VCOUT0/P03
IVCMP0/P44
IVREF0/P45
COMPARATOR1
VCOUT1/P04
IVCMP1/P43
IVREF1/P42
PORT 0
8
P00 to P07
PORT 1
8
P10 to P17
PORT 2
5
P20 to P22,
P26, P27
PORT 3
4
P30 to P33
PORT 4
5
P40, P42 to P45
PORT 5
4
P52 to P54, P57
PORT 6
2
P60, P61
PORT 7
5
P70, P74 to P77
PORT 12
4
P121 to P124
3
P125 to P127
PORT 13
P137
16-bit TIMER KB20
KEY RETURN
POWER ON RESET/
VOLTAGE
DETECTOR
SERIAL ARRAY
UNIT0 (4ch)
KR0/P70,
KR4/P74 to KR7/P77
5
POR/LVD
CONTROL
UART0
RxD0/P17
TxD0/P00
LINSEL
RESET CONTROL
RxD1/P06(RxD1/P43)
TxD1/P07(TxD0/P42)
UART1
SCK00/P16
SI00/P17
SO00/P00
CSI00
SCK10/P05(SCK10/P44)
SI10/P06(SI10/P43)
SO10/P07(SO10/P42)
CSI10
SYSTEM
CONTROL
SCL00/P16
SDA00/P17
IIC00
OSCILLATOR
CODE FLASH MEMORY
RL78
CPU
CORE
DATA FLASH MEMORY
TOOL0/P40
ON-CHIP DEBUG
RESET
X1/P121
X2/EXCLK/P122
HIGH-SPEED
XT1/P123
ON-CHIP
XT2/EXCLKS/P124
RAM
SCL10/P05(SCL10/P44)
SDA10/P06(SDA10/P43)
IIC10
SERIAL ARRAY
UNIT1 (4ch)
RxD2/P03
TxD2/P04
VOLTAGE
REGULATOR
VDD
REGC
VSS TOOLRxD/P17,
TOOLTxD/P00
UART2
3
SDAA0/P61
SERIAL
INTERFACE IICA0
COM0 to COM7
VL1 to VL4
CAPH
CAPL
2
36
8
LCD
CONTROLLER/
DRIVER
RAM SPACE
FOR LCD DATA
CLOCK OUTPUT
CONTROL
MULTIPLIER&
DIVIDER,
MULITIPLYACCUMULATOR
DIRECT MEMORY
ACCESS CONTROL
BCD
ADJUSTMENT
Remark
2
INTP3/P31,
INTP4/P33
2
INTP5/P01,
INTP7/P02(INTP7/P43)
SCLA0/P60
BUZZER OUTPUT
SEG0 to SEG3, SEG6 to SEG8,
SEG11, SEG12, SEG16 to SEG23,
SEG29, SEG33 to SEG50
INTERRUPT
CONTROL
RxD0/P17
INTP0/P137
INTP1/P52,
INTP2/P53,
INTP6/P57
PCLBUZ0/P02
(PCLBUZ0/P07),
PCLBUZ1/P01
CRC
WINDOW
WATCHDOG
TIMER
12- BIT INTERVAL
TIMER
REAL-TIME
CLOCK 2
LOW-SPEED
ON-CHIP
OSCILLATOR
RTC1HZ/P31
Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection
register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the RL78/L13
User’s Manual.
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RL78/L13
1. OUTLINE
1.5.2 80-pin products
TIMER ARRAY
UNIT0 (8ch)
PORT 0
8
P00 to P07
PORT 1
8
P10 to P17
PORT 2
8
P20 to P27
PORT 3
6
P30 to P35
PORT 4
8
P40 to P47
ch5
PORT 5
8
P50 to P57
ch6
PORT 6
2
P60, P61
PORT 7
8
P70 to P77
TI00/TO00/P52
(TI00/TO00/P40)
ch0
TI01/TO01/P32
(TI01/TO01/P60)
ch1
TI02/TO02/P54
(TI02/TO02/P61)
ch2
TI03/TO03/P30
(TI03/TO03/P127)
ch3
TI04/TO04/P14
(TI04/TO04/P126)
ch4
TI05/TO05/P42
(TI05/TO05/P01)
TI06/TO06/P56
(TI06/TO06/P125)
TI07/TO07/P15
(TI07/TO07/P41)
RxD0/P17
(RxD0/P47)
ch7
REMOOUT/P30
(REMOOUT/P127)
TKBO00/P74, TKBO01-0/P77,
TKBO01-1/P76, TKBO01-2/P75
Remote Carrier
4
A/D CONVERTER
2
ANI0/P21, ANI1/P20
6
ANI16/P22 to ANI21/P27
4
ANI22/P10 to ANI25/P13
AVREFM/P20
AVREFP/P21
COMPARATOR
(2ch)
COMPARATOR0
VCOUT0/P03
IVCMP0/P44
IVREF0/P45
PORT 12
COMPARATOR1
VCOUT1/P04
IVCMP1/P43
IVREF1/P42
PORT 13
16-bit TIMER KB20
KEY RETURN
4
P121 to P124
3
P125 to P127
P130
P137
KR0/P70 to
KR7/P77
8
SERIAL ARRAY
UNIT0 (4ch)
POWER ON RESET/
VOLTAGE
DETECTOR
UART0
RxD0/P17(RxD0/P47)
TxD0/P00(TxD0/P130)
LINSEL
RxD1/P06(RxD1/P43)
TxD1/P07(TxD0/P42)
UART1
SCK00/P16(SCK00/P46)
SI00/P17(SI00/P47)
SO00/P00(SO00/P130)
CSI00
SCK10/P05(SCK10/P44)
SI10/P06(SI10/P43)
SO10/P07(SO10/P42)
CSI10
SCL00/P16(SCL00/P46)
SDA00/P17(SDA00/P47)
IIC00
SCL10/P05(SCL10/P44)
SDA10/P06(SDA10/P43)
IIC10
POR/LVD
CONTROL
RESET CONTROL
CODE FLASH MEMORY
RL78
CPU
CORE
DATA FLASH MEMORY
TOOL0/P40
ON-CHIP DEBUG
SYSTEM
CONTROL
RESET
X1/P121
X2/EXCLK/P122
HIGH-SPEED
XT1/P123
ON-CHIP
OSCILLATOR
XT2/EXCLKS/P124
RAM
VOLTAGE
REGULATOR
REGC
SERIAL ARRAY
UNIT1 (4ch)
RxD2/P03
TxD2/P04
UART2
RxD3/P34
TxD3/P35
UART3
VDD
VSS TOOLRxD/P17,
TOOLTxD/P00
RxD0/P17 (RxD0/P47)
INTP0/P137
4
SEG0 to SEG50
51
COM0 to COM7
VL1 to VL4
CAPH
CAPL
8
LCD
CONTROLLER/
DRIVER
RAM SPACE
FOR LCD DATA
SCLA0/P60
2
BUZZER OUTPUT
2
CLOCK OUTPUT
CONTROL
MULTIPLIER&
DIVIDER,
MULITIPLYACCUMULATOR
DIRECT MEMORY
ACCESS CONTROL
BCD
ADJUSTMENT
Remark
SDAA0/P61
SERIAL
INTERFACE IICA0
INTERRUPT
CONTROL
INTP1/P52,
INTP2/P53,
INTP5/P55(INTP5/P01),
INTP6/P57
INTP3/P31,
INTP4/P33
INTP7/P02(INTP7/P43)
PCLBUZ0/P02
(PCLBUZ0/P07),
PCLBUZ1/P01
CRC
WINDOW
WATCHDOG
TIMER
12- BIT INTERVAL
TIMER
REAL-TIME
CLOCK 2
LOW-SPEED
ON-CHIP
OSCILLATOR
RTC1HZ/P31
Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection
register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the RL78/L13
User’s Manual.
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Page 9 of 123
RL78/L13
1. OUTLINE
1.6 Outline of Functions
(1/2)
Item
64-pin
80-pin
R5F10WLx (x = A, C-G)
R5F10WMx (x = A, C-G)
Code flash memory (KB)
16 to 128
16 to 128
Data flash memory (KB)
4
4
RAM (KB)
1 to 8
Address space
1 to 8Note 1
Note 1
1 MB
Main system High-speed system clock X1 (crystal/ceramic) oscillation, external main system clock input (EXCLK)
HS (High-speed main) mode: 1 to 20 MHz (VDD = 2.7 to 5.5 V),
clock
HS (High-speed main) mode: 1 to 16 MHz (VDD = 2.4 to 5.5 V),
LS (Low-speed main) mode: 1 to 8 MHz (VDD = 1.8 to 5.5 V),
LV (Low-voltage main) mode: 1 to 4 MHz (VDD = 1.6 to 5.5 V)
High-speed on-chip
oscillator
HS (High-speed main) mode:
HS (High-speed main) mode:
LS (Low-speed main) mode:
LV (Low-voltage main) mode:
1 to 24 MHz (VDD = 2.7 to 5.5 V),
1 to 16 MHz (VDD = 2.4 to 5.5 V),
1 to 8 MHz (VDD = 1.8 to 5.5 V),
1 to 4 MHz (VDD = 1.6 to 5.5 V)
Clock for 16-bit timer KB20
48 MHz (TYP.): VDD = 2.7 to 5.5 V
Subsystem clock
XT1 (crystal) oscillation, external subsystem clock input (EXCLKS)
32.768 kHz (TYP.): VDD = 1.6 to 5.5 V
Low-speed on-chip oscillator
15 kHz (TYP.)
General-purpose register
(8-bit register × 8) × 4 banks
Minimum instruction execution time
0.04167 μs (High-speed on-chip oscillator: fIH = 24 MHz operation)
0.05 μs (High-speed system clock: fMX = 20 MHz operation)
30.5 μs (Subsystem clock: fSUB = 32.768 kHz operation)
•
•
•
•
Instruction set
I/O port
Data transfer (8/16 bits)
Adder and subtractor/logical operation (8/16 bits)
Multiplication (8 bits × 8 bits)
Rotate, barrel shift, and bit manipulation (Set, reset, test, and Boolean operation), etc.
Total
49
65
42
(N-ch O.D. I/O [VDD withstand voltage]: 12)
58
(N-ch O.D. I/O [VDD withstand voltage]: 18)
CMOS input
5
5
CMOS output
−
−
N-ch O.D I/O
(withstand voltage: 6 V)
2
2
CMOS I/O
Timer
Notes 1.
16-bit timer TAU
8 channels
16-bit timer KB20
1 channel
Watchdog timer
1 channel
12-bit interval timer (IT)
1 channel
Real-time clock 2
1 channel
RTC2 output
1
• 1 Hz (subsystem clock: fSUB = 32.768 kHz)
Timer output
8 channels (PWM outputs: 7Note 2) (TAU used)
1 channel (timer KB20 used)
Remote control output
function
1 (TAU used)
In the case of the 8 KB, this is about 7 KB when the self-programming function and data flash function are
used.
2.
The number of outputs varies depending on the setting of the channels in use and the number of master
channels (see 6.9.3 Operation as multiple PWM output function in the RL78/L13 User’s Manual.).
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Page 10 of 123
RL78/L13
1. OUTLINE
(2/2)
Item
64-pin
80-pin
R5F10WLx (x = A, C-G)
R5F10WMx (x = A, C-G)
Clock output/buzzer output controller
2
• 2.44 kHz, 4.88 kHz, 9.76 kHz, 1.25 MHz, 2.5 MHz, 5 MHz, 10 MHz
(Main system clock: fMAIN = 20 MHz operation)
• 256 Hz, 512 Hz, 1.024 kHz, 2.048 kHz, 4.096 kHz, 8.192 kHz, 16.384 kHz, 32.768 kHz
(Subsystem clock: fSUB = 32.768 kHz operation)
8/10-bit resolution A/D converter
9 channels
Comparator
2 channels
Serial interface
[64-pin]
12 channels
• CSI: 1 channel/UART (UART supporting LIN-bus): 1 channel/simplified I2C: 1 channel
• CSI: 1 channel/UART: 1 channel/simplified I2C: 1 channel
• UART: 1 channel
[80-pin]
• CSI: 1 channel/UART (UART supporting LIN-bus): 1 channel/simplified I2C: 1 channel
• CSI: 1 channel/UART: 1 channel/simplified I2C: 1 channel
• UART: 2 channels
2
I C bus
LCD controller/driver
1 channel
Internal voltage boosting method, capacitor split method, and external resistance division
method are switchable.
Segment signal output
36 (32)Note 1
Common signal output
51 (47)Note 1
4 (8)Note 1
Multiplier and divider/multiply-
• 16 bits × 16 bits = 32 bits (Unsigned or signed)
accumulator
• 32 bits ÷ 32 bits = 32 bits (Unsigned)
• 16 bits × 16 bits + 32 bits = 32 bits (Unsigned or signed)
DMA controller
4 channels
Vectored
Internal
32
35
interrupt sources
External
11
11
5
8
Key interrupt
• Reset by RESET pin
Reset
• Internal reset by watchdog timer
• Internal reset by power-on-reset
• Internal reset by voltage detector
• Internal reset by illegal instruction executionNote 2
• Internal reset by RAM parity error
• Internal reset by illegal-memory access
Power-on-reset circuit
• Power-on-reset:
1.51 V (TYP.)
• Power-down-reset: 1.50 V (TYP.)
Voltage detector
• Rising edge: 1.67 V to 4.06 V (14 steps)
• Falling edge: 1.63 V to 3.98 V (14 steps)
On-chip debug function
Provided
Power supply voltage
VDD = 1.6 to 5.5 V (TA = -40 to +85°C)
Operating ambient temperature
Consumer applications: TA = −40 to +85°C
VDD = 2.4 to 5.5 V (TA = -40 to +105°C)
Industrial applications: TA = −40 to +105°C
Notes 1.
2.
The values in parentheses are the number of signal outputs when 8 com is used.
This reset occurs when instruction code FFH is executed.
This reset does not occur during emulation using an in-circuit emulator or an on-chip debugging emulator.
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Page 11 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
Target products A: Consumer applications; TA = −40 to +85°C
R5F10WLAAFA, R5F10WLCAFA, R5F10WLDAFA,
R5F10WLEAFA, R5F10WLFAFA, R5F10WLGAFA,
R5F10WLAAFB, R5F10WLCAFB, R5F10WLDAFB,
R5F10WLEAFB, R5F10WLFAFB, R5F10WLGAFB,
R5F10WMAAFA, R5F10WMCAFA, R5F10WMDAFA,
R5F10WMEAFA, R5F10WMFAFA, R5F10WMGAFA,
R5F10WMAAFB, R5F10WMCAFB, R5F10WMDAFB,
R5F10WMEAFB, R5F10WMFAFB, R5F10WMGAFB
G: Industrial applications; when using TA = −40 to +105°C specification products at TA = −40 to +85°C
R5F10WLAGFB, R5F10WLCGFB, R5F10WLDGFB,
R5F10WLEGFB, R5F10WLFGFB, R5F10WLGGFB
R5F10WMAGFB, R5F10WMCGFB, R5F10WMDGFB,
R5F10WMEGFB, R5F10WMFGFB, R5F10WMGGFB
Cautions 1. The RL78 microcontrollers have an on-chip debug function, which is provided for development
and evaluation.
Do not use the on-chip debug function in products designated for mass
production, because the guaranteed number of rewritable times of the flash memory may be
exceeded when this function is used, and product reliability therefore cannot be guaranteed.
Renesas Electronics is not liable for problems occurring when the on-chip debug function is
used.
2. The pins mounted depend on the product. See 2.1 Port Function to 2.2.1 With functions for
each product in the RL78/L13 User’s Manual.
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Page 12 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.1 Absolute Maximum Ratings
Absolute Maximum Ratings (1/3)
Parameter
Symbol
Supply voltage
VDD
REGC pin input voltage
VIREGC
Conditions
REGC
Ratings
Unit
−0.5 to +6.5
V
−0.3 to +2.8
V
and −0.3 to VDD +0.3Note 1
Input voltage
VI1
P00 to P07, P10 to P17, P20 to P27, P30 to P35,
−0.3 to VDD +0.3Note 2
V
−0.3 to +6.5
V
V
V
P40 to P47, P50 to P57, P60, P61, P70 to P77,
P121 to P127, P130, P137
Output voltage
VI2
P60 and P61 (N-ch open-drain)
VI3
EXCLK, EXCLKS, RESET
−0.3 to VDD +0.3
Note 2
VO1
P00 to P07, P10 to P17, P20 to P27, P30 to P35,
−0.3 to VDD +0.3
Note 2
P40 to P47, P50 to P57, P60, P61, P70 to P77,
P121 to P127, P130, P137
Analog input voltage
VAI1
ANI0, ANI1, ANI16 to ANI26
−0.3 to VDD +0.3
V
and −0.3 to AVREF(+) +0.3Notes 2, 3
Notes 1. Connect the REGC pin to Vss via a capacitor (0.47 to 1 μ F).
This value regulates the absolute
maximum rating of the REGC pin. Do not use this pin with voltage applied to it.
2.
Must be 6.5 V or lower.
3.
Do not exceed AV REF(+) + 0.3 V in case of A/D conversion target pin.
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge
of suffering physical damage, and therefore the product must be used under conditions that ensure that
the absolute maximum ratings are not exceeded.
Remarks 1.
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
2.
AVREF (+): + side reference voltage of the A/D converter.
3.
VSS: Reference voltage
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Absolute Maximum Ratings (2/3)
Parameter
LCD voltage
Symbol
VL1
Conditions
VL1 voltage
Note 1
Ratings
Unit
−0.3 to +2.8 and
V
−0.3 to VL4 +0.3
VL2
VL2 voltageNote 1
−0.3 to VL4 +0.3Note 2
V
VL3
VL3 voltageNote 1
−0.3 to VL4 +0.3Note 2
V
VL4
VL4 voltageNote 1
−0.3 to +6.5
V
VLCAP
CAPL, CAPH voltage
−0.3 to VL4 +0.3
V
VOUT
COM0 to COM7
External resistance division method
SEG0 to SEG50
output voltage
Note 1
Note 2
−0.3 to VDD +0.3
Note 2
V
Capacitor split method
−0.3 to VDD +0.3
Note 2
V
Internal voltage boosting method
−0.3 to VL4 +0.3
Note 2
V
Notes 1. This value only indicates the absolute maximum ratings when applying voltage to the VL1, VL2, VL3, and VL4 pins;
it does not mean that applying voltage to these pins is recommended. When using the internal voltage boosting
method or capacitance split method, connect these pins to VSS via a capacitor (0.47 μF ± 30%) and connect a
capacitor (0.47 μF ± 30%) between the CAPL and CAPH pins.
2.
Must be 6.5 V or lower.
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge
of suffering physical damage, and therefore the product must be used under conditions that ensure that
the absolute maximum ratings are not exceeded.
Remark VSS: Reference voltage
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Page 14 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Absolute Maximum Ratings (3/3)
Parameter
Output current, high
Symbol
IOH1
Conditions
Per pin
P00 to P07, P10 to P17, P22 to P27,
Ratings
Unit
−40
mA
−170
mA
−0.5
mA
P30 to P35, P40 to P47,
P50 to P57, P60, P61,
P70 to P77, P125 to P127, P130
Total of all pins
P00 to P07, P10 to P17, P22 to P27,
−170 mA
P30 to P35, P40 to P47,
P50 to P57, P60, P61,
P70 to P77, P125 to P127, P130
IOH2
Per pin
P20, P21
Total of all pins
Output current, low
IOL1
Per pin
P00 to P07, P10 to P17, P22 to P27,
−1
mA
40
mA
P30 to P35, P40 to P47,
P50 to P57, P60, P61,
P70 to P77, P125 to P127, P130
Total of all pins
P40 to P47, P130
70
mA
170 mA
P00 to P07, P10 to P17, P22 to P27,
100
mA
1
mA
2
mA
−40 to +85
°C
−65 to +150
°C
P30 to P35, P50 to P57,
P60, P61, P70 to P77,
P125 to P127
IOL2
Per pin
P20, P21
Total of all pins
Operating ambient
TA
temperature
Storage temperature
In normal operation mode
In flash memory programming mode
Tstg
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge
of suffering physical damage, and therefore the product must be used under conditions that ensure that
the absolute maximum ratings are not exceeded.
Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins.
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Page 15 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.2 Oscillator Characteristics
2.2.1 X1 and XT1 oscillator characteristics
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Resonator
Conditions
MIN.
TYP.
MAX.
Unit
MHz
X1 clock oscillation
Ceramic resonator/
2.7 V ≤ VDD ≤ 5.5 V
1.0
20.0
frequency (fX)Note
crystal resonator
2.4 V ≤ VDD < 2.7 V
1.0
16.0
1.8 V ≤ VDD < 2.4 V
1.0
8.0
1.6 V ≤ VDD < 1.8 V
1.0
4.0
XT1 clock oscillation
Crystal resonator
32
32.768
35
kHz
frequency (fXT)Note
Note Indicates only permissible oscillator frequency ranges. Refer to AC Characteristics for instruction execution time.
Request evaluation by the manufacturer of the oscillator circuit mounted on a board to check the oscillator
characteristics.
Caution Since the CPU is started by the high-speed on-chip oscillator clock after a reset release, check the X1
clock oscillation stabilization time using the oscillation stabilization time counter status register (OSTC)
by the user.
Determine the oscillation stabilization time of the OSTC register and the oscillation
stabilization time select register (OSTS) after sufficiently evaluating the oscillation stabilization time
with the resonator to be used.
Remark
When using the X1 oscillator and XT1 oscillator, see 5.4 System Clock Oscillator in the RL78/L13 User’s
Manual.
2.2.2 On-chip oscillator characteristics
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
High-speed on-chip oscillator
Symbol
Conditions
MAX.
Unit
1
24
MHz
1.8 V ≤ VDD ≤ 5.5 V
−1.0
+1.0
%
1.6 V ≤ VDD < 1.8 V
−5.0
+5.0
%
1.8 V ≤ VDD ≤ 5.5 V
−1.5
+1.5
%
1.6 V ≤ VDD < 1.8 V
−5.5
+5.5
%
fIH
MIN.
TYP.
clock frequencyNotes 1, 2
−20 to +85°C
High-speed on-chip oscillator
clock frequency accuracy
−40 to −20°C
Low-speed on-chip oscillator
15
fIL
kHz
clock frequency
Low-speed on-chip oscillator
−15
+15
%
clock frequency accuracy
Notes 1. The high-speed on-chip oscillator frequency is selected by bits 0 to 4 of the option byte (000C2H/010C2H)
and bits 0 to 2 of the HOCODIV register.
2. This indicates the oscillator characteristics only. Refer to AC Characteristics for the instruction execution
time.
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.3 DC Characteristics
2.3.1 Pin characteristics
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
IOH1
Output current,
highNote 1
IOH2
Notes 1.
Conditions
MIN.
TYP.
MAX.
−10.0
Unit
Per pin for P00 to P07, P10 to P17,
P22 to P27, P30 to P35, P40 to P47,
P50 to P57, P70 to P77, P125 to P127,
P130
1.6 V ≤ VDD ≤ 5.5 V
Total of P00 to P07, P10 to P17,
P22 to P27, P30 to P35, P40 to P47,
P50 to P57, P70 to P77, P125 to P127,
P130
(When duty = 70%Note 3)
4.0 V ≤ VDD ≤ 5.5 V
−90.0
mA
2.7 V ≤ VDD < 4.0 V
−15.0
mA
1.8 V ≤ VDD < 2.7 V
−7.0
mA
1.6 V ≤ VDD < 1.8 V
−3.0
mA
Per pin for P20 and P21
1.6 V ≤ VDD ≤ 5.5 V
Total of all pins
(When duty = 70%Note 3)
1.6 V ≤ VDD ≤ 5.5 V
−0.1
Note 2
Note 2
−0.2
mA
mA
mA
Value of the current at which the device operation is guaranteed even if the current flows from the VDD pin
to an output pin
2.
3.
Do not exceed the total current value.
Output current value under conditions where the duty factor ≤ 70%.
The output current value that has changed to the duty factor > 70% the duty ratio can be calculated with the
following expression (when changing the duty factor from 70% to n%).
• Total output current of pins = (IOH × 0.7)/(n × 0.01)
Where n = 80% and IOH = −90.0 mA
Total output current of pins = (−90.0 × 0.7)/(80 × 0.01) ≅ −78.75 mA
However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A
current higher than the absolute maximum rating must not flow into one pin.
Caution P00, P04 to P07, P16, P17, P35, P42 to P44, P46, P47, P53 to P56, and P130 do not output high level in
N-ch open-drain mode.
Remark
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Output current,
lowNote 1
IOL1
MAX.
Unit
Per pin for P00 to P07, P10 to P17,
P22 to P27, P30 to P35, P40 to P47,
P50 to P57, P70 to P77,
P125 to P127, P130
Conditions
20.0Note 2
mA
Per pin for P60 and P61
15.0Note 2
mA
70.0
mA
2.7 V ≤ VDD < 4.0 V
15.0
mA
1.8 V ≤ VDD < 2.7 V
9.0
mA
1.6 V ≤ VDD < 1.8 V
4.5
mA
4.0 V ≤ VDD ≤ 5.5 V
90.0
mA
2.7 V ≤ VDD < 4.0 V
35.0
mA
1.8 V ≤ VDD < 2.7 V
20.0
mA
1.6 V ≤ VDD < 1.8 V
10.0
mA
Total of all pins
(When duty = 70%Note 3)
160.0
mA
Per pin for P20 and P21
0.4Note 2
mA
0.8
mA
Total of P00 to P07, P10 to P17,
P22 to P27,
P30 to P35, P50 to P57, P70 to P77,
P125 to P127
(When duty = 70%Note 3)
IOL2
Total of all pins
(When duty = 70%Note 3)
Notes 1.
TYP.
4.0 V ≤ VDD ≤ 5.5 V
Total of P40 to P47, P130
(When duty = 70%Note 3)
MIN.
1.6 V ≤ VDD ≤ 5.5 V
Value of the current at which the device operation is guaranteed even if the current flows from an output pin
to the VSS pin
2.
3.
Do not exceed the total current value.
Output current value under conditions where the duty factor ≤ 70%.
The output current value that has changed to the duty factor > 70% the duty ratio can be calculated with the
following expression (when changing the duty factor from 70% to n%).
• Total output current of pins = (IOL × 0.7)/(n × 0.01)
Where n = 80% and IOL = 70.0 mA
Total output current of pins = (70.0 × 0.7)/(80 × 0.01) ≅ 61.25 mA
However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A
current higher than the absolute maximum rating must not flow into one pin.
Remark
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Input voltage,
Symbol
VIH1
Conditions
P00 to P07, P10 to P17, P22 to P27,
MIN.
Normal input buffer
TYP.
MAX.
Unit
0.8VDD
VDD
V
2.2
VDD
V
2.0
VDD
V
1.5
VDD
V
P30 to P35, P40 to P47, P50 to P57,
high
P70 to P77, P125 to P127, P130,
P137
VIH2
P03, P05, P06, P16, P17, P34, P43,
TTL input buffer
P44, P46, P47, P53, P55
4.0 V ≤ VDD ≤ 5.5 V
TTL input buffer
3.3 V ≤ VDD < 4.0 V
TTL input buffer
1.6 V ≤ VDD < 3.3 V
VIH3
P20, P21
0.7VDD
VDD
V
VIH4
P60, P61
0.7VDD
6.0
V
VIH5
P121 to P124, P137, EXCLK, EXCLKS, RESET
0.8VDD
VDD
V
Normal input buffer
0
0.2VDD
V
P03, P05, P06, P16, P17, P34, P43,
TTL input buffer
0
0.8
V
P44, P46, P47, P53, P55
4.0 V ≤ VDD ≤ 5.5 V
0
0.5
V
0
0.32
V
Input voltage, low VIL1
P00 to P07, P10 to P17, P22 to P27,
P30 to P35, P40 to P47, P50 to P57,
P70 to P77, P125 to P127, P130,
P137
VIL2
TTL input buffer
3.3 V ≤ VDD < 4.0 V
TTL input buffer
1.6 V ≤ VDD < 3.3 V
VIL3
P20, P21
0
0.3VDD
V
VIL4
P60, P61
0
0.3VDD
V
VIL5
P121 to P124, P137, EXCLK, EXCLKS, RESET
0
0.2VDD
V
Caution The maximum value of VIH of pins P00, P04 to P07, P16, P17, P35, P42 to P44, P46, P47, P53 to P56,
and P130 is VDD, even in the N-ch open-drain mode.
Remark
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 19 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Output voltage,
VOH1
high
Conditions
MIN.
P00 to P07, P10 to P17, P22 to P27,
4.0 V ≤ VDD ≤ 5.5 V,
P30 to P35, P40 to P47, P50 to P57,
IOH1 = −10.0 mA
P70 to P77, P125 to P127, P130
4.0 V ≤ VDD ≤ 5.5 V,
TYP.
MAX.
Unit
VDD − 1.5
V
VDD − 0.7
V
VDD − 0.6
V
VDD − 0.5
V
VDD − 0.5
V
VDD − 0.5
V
IOH1 = −3.0 mA
2.7 V ≤ VDD ≤ 5.5 V,
IOH1 = −2.0 mA
1.8 V ≤ VDD ≤ 5.5 V,
IOH1 = −1.5 mA
1.6 V ≤ VDD ≤ 5.5 V,
IOH1 = −1.0 mA
VOH2
P20 and P21
1.6 V ≤ VDD ≤ 5.5 V,
IOH2 = −100 μ A
Output voltage,
VOL1
low
P00 to P07, P10 to P17, P22 to P27,
4.0 V ≤ VDD ≤ 5.5 V,
P30 to P35, P40 to P47, P50 to P57,
IOL1 = 20 mA
P70 to P77, P125 to P127, P130
4.0 V ≤ VDD ≤ 5.5 V,
1.3
V
0.7
V
0.6
V
0.4
V
0.4
V
0.4
V
0.4
V
2.0
V
0.4
V
0.4
V
0.4
V
0.4
V
IOL1 = 8.5 mA
2.7 V ≤ VDD ≤ 5.5 V,
IOL1 = 3.0 mA
2.7 V ≤ VDD ≤ 5.5 V,
IOL1 = 1.5 mA
1.8 V ≤ VDD ≤ 5.5 V,
IOL1 = 0.6 mA
1.6 V ≤ VDD < 1.8 V,
IOL1 = 0.3 mA
VOL2
P20 and P21
1.6 V ≤ VDD ≤ 5.5 V,
IOL2 = 400 μA
VOL3
P60 and P61
4.0 V ≤ VDD ≤ 5.5 V,
IOL3 = 15.0 mA
4.0 V ≤ VDD ≤ 5.5 V,
IOL3 = 5.0 mA
2.7 V ≤ VDD ≤ 5.5 V,
IOL3 = 3.0 mA
1.8 V ≤ VDD ≤ 5.5 V,
IOL3 = 2.0 mA
1.6 V ≤ VDD < 1.8 V,
IOL3 = 1.0 mA
Caution P00, P04 to P07, P16, P17, P35, P42 to P44, P46, P47, P53 to P56, and P130 do not output high level in
N-ch open-drain mode.
Remark
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 20 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Input leakage
ILIH1
Conditions
P00 to P07, P10 to P17,
MIN.
TYP.
MAX.
Unit
VI = VDD
1
μA
1
μA
1
μA
10
μA
VI = VSS
−1
μA
−1
μA
−1
μA
−10
μA
P22 to P27, P30 to P35,
current, high
P40 to P47, P50 to P57,
P70 to P77, P125 to P127,
P130, P137
ILIH2
P20 and P21, RESET
VI = VDD
ILIH3
P121 to P124
VI = VDD
In input port mode
(X1, X2, XT1, XT2, EXCLK,
and when external
EXCLKS)
clock is input
Resonator
connected
Input leakage
ILIL1
P00 to P07, P10 to P17,
P22 to P27, P30 to P35,
current, low
P40 to P47, P50 to P57,
P70 to P77, P125 to P127,
P130, P137
ILIL2
P20 and P21, RESET
VI = VSS
ILIL3
P121 to P124
VI = VSS
In input port mode
(X1, X2, XT1, XT2, EXCLK,
and when external
EXCLKS)
clock is input
Resonator
connected
On-chip pull-up
RU1
P00 to P07, P10 to P17,
VI = VSS
P22 to P27, P30 to P35,
resistance
P45 to P47, P50 to P57,
2.4 V ≤ VDD < 5.5 V
10
20
100
kΩ
1.6 V ≤ VDD < 2.4 V
10
30
100
kΩ
10
20
100
kΩ
P70 to P77, P125 to P127,
P130
RU2
Remark
P40 to P44
VI = VSS
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 21 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.3.2 Supply current characteristics
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Supply
currentNote
IDD1
(1/2)
Conditions
Operating
mode
1
HS (highspeed main)
modeNote 5
MIN.
fHOCO = 48 MHzNote 3,
fIH = 24 MHzNote 3
TYP.
MAX.
Unit
Basic
operation
VDD = 5.0 V
VDD = 3.0 V
2.0
Normal
operation
VDD = 5.0 V
3.8
6.5
mA
VDD = 3.0 V
3.8
6.5
mA
Basic
operation
VDD = 5.0 V
1.7
mA
VDD = 3.0 V
1.7
mA
Normal
operation
VDD = 5.0 V
3.6
6.1
mA
VDD = 3.0 V
3.6
6.1
mA
fHOCO = 16 MHzNote 3,
fIH = 16 MHzNote 3
Normal
operation
VDD = 5.0 V
2.7
4.7
mA
VDD = 3.0 V
2.7
4.7
mA
fHOCO = 8 MHzNote 3 ,
fIH = 8 MHzNote 3
Normal
operation
VDD = 3.0 V
1.2
2.1
mA
VDD = 2.0 V
1.2
2.1
mA
LV (lowfHOCO = 4 MHzNote 3,
voltage main) fIH = 4 MHzNote 3
modeNote 5
Normal
operation
VDD = 3.0 V
1.2
1.8
mA
VDD = 2.0 V
1.2
1.8
mA
fMX = 20 MHzNote 2,
VDD = 5.0 V
Normal
operation
Square wave input
3.0
5.1
mA
Resonator connection
3.2
5.2
mA
fMX = 20 MHzNote 2,
VDD = 3.0 V
Normal
operation
Square wave input
2.9
5.1
mA
Resonator connection
3.2
5.2
mA
fMX = 16 MHzNote 2,
VDD = 5.0 V
Normal
operation
Square wave input
2.5
4.4
mA
Resonator connection
2.7
4.5
mA
fMX = 16 MHzNote 2,
VDD = 3.0 V
Normal
operation
Square wave input
2.5
4.4
mA
Resonator connection
2.7
4.5
mA
fMX = 10 MHzNote 2,
VDD = 5.0 V
Normal
operation
Square wave input
1.9
3.0
mA
Resonator connection
1.9
3.0
mA
fMX = 10 MHzNote 2,
VDD = 3.0 V
Normal
operation
Square wave input
1.9
3.0
mA
Resonator connection
1.9
3.0
mA
fMX = 8 MHzNote 2,
VDD = 3.0 V
Normal
operation
Square wave input
1.1
2.0
mA
Resonator connection
1.1
2.0
mA
fMX = 8 MHzNote 2,
VDD = 2.0 V
Normal
operation
Square wave input
1.1
2.0
mA
Resonator connection
1.1
2.0
mA
fSUB = 32.768 kHzNote
4
,
TA = −40°C
Normal
operation
Square wave input
4.0
5.4
μA
Resonator connection
4.3
5.4
μA
fSUB = 32.768 kHz Note
,
TA = +25°C
Normal
operation
Square wave input
4.0
5.4
μA
Resonator connection
4.3
5.4
μA
fSUB = 32.768 kHzNote
,
TA = +50°C
Normal
operation
Square wave input
4.1
7.1
μA
Resonator connection
4.4
7.1
μA
fSUB = 32.768 kHzNote
,
TA = +70°C
Normal
operation
Square wave input
4.3
8.7
μA
Resonator connection
4.7
8.7
μA
fSUB = 32.768 kHzNote
,
TA = +85°C
Normal
operation
Square wave input
4.7
12.0
μA
Resonator connection
5.2
12.0
μA
fHOCO = 24 MHz
fIH = 24 MHzNote 3
,
Note 3
LS (lowspeed main)
modeNote 5
HS (highspeed main)
modeNote 5
LS (lowspeed main)
modeNote 5
Subsystem
clock
operation
4
4
4
4
2.0
mA
mA
(Notes and Remarks are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 22 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed
to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not
including the current flowing into the LCD controller/driver, A/D converter, LVD circuit, comparator, I/O port, onchip pull-up/pull-down resistors, and the current flowing during data flash rewrite.
2. When high-speed on-chip oscillator and subsystem clock are stopped.
3. When high-speed system clock and subsystem clock are stopped.
4. When high-speed on-chip oscillator and high-speed system clock are stopped. When setting ultra-low power
consumption oscillation (AMPHS1 = 1). The current flowing into the LCD controller/driver, 16-bit timer KB20,
real-time clock 2, 12-bit interval timer, and watchdog timer is not included.
5. Relationship between operation voltage width, operation frequency of CPU and operation mode is as below.
HS (high-speed main) mode: 2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz
2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz
LS (low-speed main) mode:
1.8 V ≤ VDD ≤ 5.5 V@1 MHz to 8 MHz
LV (low-voltage main) mode: 1.6 V ≤ VDD ≤ 5.5 V@1 MHz to 4 MHz
Remarks 1. fMX:
High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. fHOCO: High-speed on-chip oscillator clock frequency (48 MHz max.)
3. fIH:
High-speed on-chip oscillator clock frequency (24 MHz max.)
4. fSUB:
Subsystem clock frequency (XT1 clock oscillation frequency)
5. Except subsystem clock operation, temperature condition of the TYP. value is TA = 25°C
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 23 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Supply
I
Note 2
DD2
Conditions
HALT
mode
currentNote 1
(2/2)
HS (high-speed
main) modeNote
7
MIN.
fHOCO = 48 MHz
Note 4
,
fIH = 24 MHzNote 4
fHOCO = 24 MHz
Note 4
,
fIH = 24 MHzNote 4
fHOCO = 16 MHz
Note 4
,
fIH = 16 MHzNote 4
LS (low-speed
main) modeNote
7
fHOCO = 8 MHz
Note 4
,
fIH = 8 MHz Note 4
LV (low-voltage fHOCO = 4 MHzNote 4,
main) modeNote 7
fIH = 4 MHzNote 4
HS (high-speed
main) modeNote
7
fMX = 20 MHz
,
VDD = 5.0 V
0.71
1.95
mA
VDD = 3.0 V
0.71
1.95
VDD = 5.0 V
0.49
1.64
VDD = 3.0 V
0.49
1.64
VDD = 5.0 V
0.43
1.11
VDD = 3.0 V
0.43
1.11
VDD = 3.0 V
280
770
VDD = 2.0 V
280
770
VDD = 3.0 V
430
700
VDD = 2.0 V
430
700
0.31
1.42
Resonator connection
0.48
1.42
fMX = 20 MHzNote 3,
Square wave input
0.29
1.42
VDD = 3.0 V
Resonator connection
0.48
1.42
Square wave input
0.26
0.86
Resonator connection
0.45
1.15
Square wave input
0.25
0.86
Resonator connection
0.44
1.15
fMX = 16 MHz
,
Note 3
,
Note 3
VDD = 3.0 V
fMX = 10 MHz
,
Square wave input
0.20
0.63
VDD = 5.0 V
Resonator connection
0.28
0.71
fMX = 10 MHzNote 3,
Square wave input
0.19
0.63
VDD = 3.0 V
Resonator connection
0.28
0.71
Square wave input
100
560
Resonator connection
160
560
Square wave input
100
560
Resonator connection
160
560
0.34
0.62
Resonator connection
0.51
0.80
fSUB = 32.768 kHzNote 5, Square wave input
TA = +25°C
Resonator connection
0.38
0.62
0.57
0.80
0.46
2.30
0.67
2.49
0.65
4.03
0.91
4.22
1.00
8.04
fMX = 8 MHz
Note 3
Note 3
,
main) modeNote 7 VDD = 3.0 V
fMX = 8 MHz
Note 3
,
VDD = 2.0 V
fSUB = 32.768 kHz
Note 5
clock operation TA = −40°C
fSUB = 32.768 kHz
Note 5
TA = +50°C
fSUB = 32.768 kHz
fSUB = 32.768 kHz
TA = +85°C
, Square wave input
, Square wave input
Resonator connection
Note 5
TA = +70°C
IDD3Note 6
Unit
Square wave input
Note 3
VDD = 5.0 V
Subsystem
MAX.
VDD = 5.0 V
fMX = 16 MHz
LS (low-speed
TYP.
, Square wave input
Resonator connection
Note 5
, Square wave input
1.31
8.23
STOP
TA = −40°C
Resonator connection
0.18
0.52
modeNote 8
TA = +25°C
0.24
0.52
TA = +50°C
0.33
2.21
TA = +70°C
0.53
3.94
TA = +85°C
0.93
7.95
mA
mA
μA
μA
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
μA
μA
μA
μA
(Notes and Remarks are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 24 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed
to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not
including the current flowing into the LCD controller/driver, A/D converter, LVD circuit, comparator, I/O port, onchip pull-up/pull-down resistors, and the current flowing during data flash rewrite.
2. During HALT instruction execution by flash memory.
3. When high-speed on-chip oscillator and subsystem clock are stopped.
4. When high-speed system clock and subsystem clock are stopped.
5. When high-speed on-chip oscillator and high-speed system clock are stopped.
When RTCLPC = 1 and setting ultra-low current consumption (AMPHS1 = 1). The current flowing into the realtime clock 2 is included. However, not including the current flowing into the clock output/buzzer output, 12-bit
interval timer, and watchdog timer.
6. Not including the current flowing into the real-time clock 2, clock output/buzzer output, 12-bit interval timer, and
watchdog timer.
7. Relationship between operation voltage width, operation frequency of CPU and operation mode is as below.
HS (high-speed main) mode: 2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz
2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz
LS (low-speed main) mode:
1.8 V ≤ VDD ≤ 5.5 V@1 MHz to 8 MHz
LV (low-voltage main) mode: 1.6 V ≤ VDD ≤ 5.5 V@1 MHz to 4 MHz
8. Regarding the value for current to operate the subsystem clock in STOP mode, refer to that in HALT mode.
Remarks 1. fMX:
High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. fHOCO: High-speed on-chip oscillator clock frequency (48 MHz max.)
3. fIH:
High-speed on-chip oscillator clock frequency (24 MHz max.)
4. fSUB:
Subsystem clock frequency (XT1 clock oscillation frequency)
5. Except subsystem clock operation and STOP mode, temperature condition of the TYP. value is TA = 25°C
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 25 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Low-speed on-
Symbol
I
Conditions
MIN.
Note 1
FIL
TYP.
MAX.
Unit
0.20
μA
0.02
μA
0.04
μA
0.22
μA
chip oscillator
operating current
RTC2 operating
IRTCNotes 1, 2,
current
3
12-bit interval
ITMKANotes 1, 2,
timer operating
4
fSUB = 32.768 kHz
current
Watchdog timer
IWDTNotes 1, 2, 5
fIL = 15 kHz
IADCNotes 1, 6
When conversion
at maximum speed
operating current
A/D converter
operating current
Normal mode, AVREFP = VDD = 5.0 V
Low voltage mode, AVREFP = VDD = 3.0 V
1.3
1.7
mA
0.5
0.7
mA
A/D converter
IADREFNote 1
reference voltage
current
75.0
μA
Temperature
sensor operating
current
ITMPSNote 1
75.0
μA
LVD operating
ILVDNotes 1, 7
0.08
μA
Window mode
12.5
μA
Comparator high-speed mode
6.5
μA
Comparator low-speed mode
1.7
μA
Window mode
8.0
μA
Comparator high-speed mode
4.0
μA
Comparator low-speed mode
1.3
μA
current
Comparator
operating current
ICMPNotes 1, 11
VDD = 5.0 V,
Regulator output
voltage = 2.1 V
VDD = 5.0 V,
Regulator output
voltage = 1.8 V
Selfprogramming
operating current
I
Notes 1, 9
FSP
2.00
12.20
mA
BGO operating
IBGONotes 1, 8
2.00
12.20
mA
While the mode is shiftingNote 10
0.50
0.60
mA
During A/D conversion, in low voltage
1.20
1.44
mA
0.70
0.84
mA
0.04
0.20
μA
0.85
2.20
μA
1.55
3.70
μA
0.20
0.50
μA
current
SNOOZE
ISNOZNote 1
ADC operation
operating current
mode, AVREFP = VDD = 3.0 V
CSI/UART operation
LCD operating
I
External resistance
fLCD = fSUB
1/3 bias,
VDD = 5.0 V,
current
13
division method
LCD clock =
128 Hz
four time
slices
VL4 = 5.0 V
ILCD2Note 1, 12
Internal voltage
fLCD = fSUB
1/3 bias,
VDD = 3.0 V,
boosting method
LCD clock =
128 Hz
four time
slices
VL4 = 3.0 V
Notes 1, 12,
LCD1
(VLCD = 04H)
VDD = 5.0 V,
VL4 = 5.1 V
(VLCD = 12H)
I
Note 1, 12
LCD3
Capacitor split
fLCD = fSUB
1/3 bias,
VDD = 3.0 V,
method
LCD clock =
128 Hz
four time
slices
VL4 = 3.0 V
(Notes and Remarks are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 26 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Notes 1. Current flowing to VDD.
2. When high speed on-chip oscillator and high-speed system clock are stopped.
3. Current flowing only to the real-time clock 2 (excluding the operating current of the low-speed on-chip oscillator
and the XT1 oscillator). The value of the current for the RL78 microcontrollers is the sum of the values of either
IDD1 or IDD2, and IRTC, when the real-time clock 2 operates in operation mode or HALT mode. When the lowspeed on-chip oscillator is selected, IFIL should be added.
IDD2 subsystem clock operation includes the
operational current of real-time clock 2.
4. Current flowing only to the 12-bit interval timer (excluding the operating current of the low-speed on-chip
oscillator and the XT1 oscillator). The value of the current for the RL78 microcontrollers is the sum of the
values of either IDD1 or IDD2, and ITMKA, when the 12-bit interval timer operates in operation mode or HALT mode.
When the low-speed on-chip oscillator is selected, IFIL should be added.
5. Current flowing only to the watchdog timer (including the operating current of the low-speed on-chip oscillator).
The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3 and IWDT when the watchdog timer
operates.
6. Current flowing only to the A/D converter. The current value of the RL78 microcontrollers is the sum of IDD1 or
IDD2 and IADC when the A/D converter operates in an operation mode or the HALT mode.
7. Current flowing only to the LVD circuit. The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or
IDD3 and ILVD when the LVD circuit operates.
8. Current flowing only during data flash rewrite.
9. Current flowing only during self programming.
10. For shift time to the SNOOZE mode, see 21.3.3 SNOOZE mode in the RL78/L13 User’s Manual.
.
11. Current flowing only to the comparator circuit. The current value of the RL78 microcontrollers is the sum of
IDD1, IDD2 or IDD3 and ICMP when the comparator circuit operates.
12. Current flowing only to the LCD controller/driver. The value of the current for the RL78 microcontrollers is the
sum of the supply current (IDD1 or IDD2) and LCD operating current (ILCD1, ILCD2, or ILCD3), when the LCD
controller/driver operates in operation mode or HALT mode. However, not including the current flowing into
the LCD panel. Conditions of the TYP. value and MAX. value are as follows.
• Setting 20 pins as the segment function and blinking all
• Selecting fSUB for system clock when LCD clock = 128 Hz (LCDC0 = 07H)
• Setting four time slices and 1/3 bias
13. Not including the current flowing into the external division resistor when using the external resistance division
method.
Remarks 1. fIL:
Low-speed on-chip oscillator clock frequency
2. fSUB: Subsystem clock frequency (XT1 clock oscillation frequency)
3. fCLK: CPU/peripheral hardware clock frequency
4. The temperature condition for the TYP. value is TA = 25°C.
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Page 27 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.4 AC Characteristics
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Instruction cycle (minimum
instruction execution time)
Symbol
TCY
Conditions
Main system
clock (fMAIN)
operation
MIN.
MAX.
Unit
1
μs
0.0625
1
μs
0.125
1
μs
LV (low-voltage 1.6 V ≤ VDD ≤ 5.5 V
main) mode
0.25
1
μs
1.8 V ≤ VDD ≤ 5.5 V
28.5
31.3
μs
HS (high-speed 2.7 V ≤ VDD ≤ 5.5 V
main) mode
2.4 V ≤ VDD < 2.7 V
1.8 V ≤ VDD ≤ 5.5 V
LS (low-speed
main) mode
Subsystem clock (fSUB)
operationNote
0.0417
1
μs
1
μs
0.125
1
μs
0.25
1
μs
2.7 V ≤ VDD ≤ 5.5 V
1.0
20.0
MHz
2.4 V ≤ VDD < 2.7 V
1.0
16.0
MHz
1.8 V ≤ VDD < 2.4 V
1.0
8.0
MHz
1.6 V ≤ VDD < 1.8 V
1.0
4.0
MHz
32
35
kHz
LV (low-voltage 1.8 V ≤ VDD ≤ 5.5 V
main) mode
fEX
fEXS
External system clock input
high-level width, low-level
width
tEXH,
tEXL
2.7 V ≤ VDD ≤ 5.5 V
24
ns
2.4 V ≤ VDD < 2.7 V
30
ns
1.8 V ≤ VDD < 2.4 V
60
ns
1.6 V ≤ VDD < 1.8 V
120
ns
13.7
μs
1/fMCK+10
ns
tEXHS,
tEXLS
TI00 to TI07 input high-level
width, low-level width
tTIH,
tTIL
TO00 to TO07, TKBO00,
TKBO01-0 to TKBO01-2
output frequency
fTO
PCLBUZ0, PCLBUZ1 output
frequency
fPCL
30.5
0.0625
In the self
HS (high-speed 2.7 V ≤ VDD ≤ 5.5 V
programming main) mode
2.4 V ≤ VDD < 2.7 V
mode
LS (low-speed 1.8 V ≤ VDD ≤ 5.5 V
main) mode
External system clock
frequency
TYP.
0.0417
4.0 V ≤ VDD ≤ 5.5 V
12
MHz
2.7 V ≤ VDD < 4.0 V
8
MHz
2.4 V ≤ VDD < 2.7 V
4
MHz
LV (low-voltage main) mode
1.6 V ≤ VDD ≤ 5.5 V
2
MHz
LS (low-speed main) mode
1.8 V ≤ VDD ≤ 5.5 V
4
MHz
HS (high-speed main) mode
4.0 V ≤ VDD ≤ 5.5 V
16
MHz
2.7 V ≤ VDD < 4.0 V
8
MHz
HS (high-speed main) mode
2.4 V ≤ VDD < 2.7 V
4
MHz
LV (low-voltage main) mode
1.8 V ≤ VDD ≤ 5.5 V
4
MHz
1.6 V ≤ VDD < 1.8 V
2
MHz
LS (low-speed main) mode
1.8 V ≤ VDD ≤ 5.5 V
4
MHz
Interrupt input high-level width, tINTH,
low-level width
tINTL
INTP0 to INTP7
1.6 V ≤ VDD ≤ 5.5 V
1
μs
Key interrupt input high-level
width, low-level width
tKRH, tKRL
KR0 to KR7
1.8 V ≤ VDD ≤ 5.5 V
250
ns
1
μs
IH-PWM output restart input
high-level width
tIHR
INTP0 to INTP7
2
fCLK
TMKB2 forced output stop
input high-level width
tIHR
INTP0 to INTP2
2
fCLK
RESET low-level width
tRSL
10
μs
1.6 V ≤ VDD < 1.8 V
(Note and Remark are listed on the next page.)
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Page 28 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Note Operation is not possible if 1.6 V ≤ VDD < 1.8 V in LV (low-voltage main) mode while the system is operating on the
subsystem clock.
Remark fMCK: Timer array unit operation clock frequency
(Operation clock to be set by the CKSmn0, CKSmn1 bits of timer mode register mn (TMRmn)
m: Unit number (m = 0), n: Channel number (n = 0 to 7))
Minimum Instruction Execution Time during Main System Clock Operation
TCY vs VDD (HS (high-speed main) mode)
10
1.0
Cycle time TCY [s]
When the high-speed on-chip oscillator clock is selected
During self programming
When high-speed system clock is selected
0.1
0.0625
0.05
0.0417
0.01
0
1.0
2.0
3.0
2.4 2.7
4.0
5.0 5.5 6.0
Supply voltage VDD [V]
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
TCY vs VDD (LS (low-speed main) mode)
10
When the high-speed on-chip oscillator clock is selected
Cycle time TCY [s]
1.0
During self programming
When high-speed system clock is selected
0.125
0.1
0.01
0
1.0
2.0
1.8
3.0
5.0 5.5 6.0
4.0
Supply voltage VDD [V]
TCY vs VDD (LV (low-voltage main) mode)
10
Cycle time TCY [s]
1.0
When the high-speed on-chip oscillator clock is selected
During self programming
When high-speed system clock is selected
0.25
0.1
0.01
0
1.0
2.0
1.6 1.8
3.0
4.0
5.0 5.5 6.0
Supply voltage VDD [V]
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
AC Timing Test Points
VIH/VOH
VIH/VOH
Test points
VIL/VOL
VIL/VOL
External System Clock Timing
1/fEX/
1/fEXS
tEXL/
tEXLS
tEXH/
tEXHS
EXCLK/EXCLKS
TI/TO Timing
tTIH
tTIL
TI00 to TI07
1/fTO
TO00 to TO07, TKBO00,
TKBO01-0, TKBO01-1,
TKBO01-2
Interrupt Request Input Timing
tINTL
tINTH
INTP0 to INTP7
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Page 31 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Key Interrupt Input Timing
tKR
KR0 to KR7
RESET Input Timing
tRSL
RESET
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.5 Peripheral Functions Characteristics
AC Timing Test Points
VIH/VOH
VIH/VOH
Test points
VIL/VOL
VIL/VOL
2.5.1 Serial array unit
(1) During communication at same potential (UART mode)
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
Transfer rate
Note
2.4 V≤ VDD ≤ 5.5 V
1
Theoretical value of the
MAX.
MIN.
MAX.
MIN.
Unit
MAX.
fMCK/6
fMCK/6
fMCK/6
bps
4.0
1.3
0.6
Mbps
−
fMCK/6
fMCK/6
bps
−
1.3
0.6
Mbps
−
−
fMCK/6
bps
−
−
0.6
Mbps
maximum transfer rate
fMCK = fCLKNote 2
1.8 V ≤ VDD ≤ 5.5 V
Theoretical value of the
maximum transfer rate
fMCK = fCLKNote 2
1.6 V ≤ VDD ≤ 5.5 V
Theoretical value of the
maximum transfer rate
fMCK = fCLKNote 2
Notes 1. Transfer rate in the SNOOZE mode is 4800 bps only.
2. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are:
HS (high-speed main) mode:
24 MHz (2.7 V ≤ VDD ≤ 5.5 V)
16 MHz (2.4 V ≤ VDD ≤ 5.5 V)
LS (low-speed main) mode:
8 MHz (1.8 V ≤ VDD ≤ 5.5 V)
LV (low-voltage main) mode:
4 MHz (1.6 V ≤ VDD ≤ 5.5 V)
Caution Select the normal input buffer for the RxDq pin and the normal output mode for the TxDq pin by using
port input mode register g (PIMg) and port output mode register g (POMg).
UART mode connection diagram (during communication at same potential)
TxDq
Rx
RL78
microcontroller
RxDq
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
User device
Tx
Page 33 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
UART mode bit width (during communication at same potential) (reference)
1/Transfer rate
High-/Low-bit width
Baud rate error tolerance
TxDq
RxDq
Remarks 1.
2.
q: UART number (q = 0 to 3), g: PIM and POM number (g = 0, 1, 3)
fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number,
n: Channel number (mn = 00 to 03, 10 to 13))
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(2) During communication at same potential (CSI mode) (master mode, SCKp... internal clock output)
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
SCKp cycle time
Symbol
tKCY1
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
MIN.
MIN.
MAX.
MAX.
Unit
MAX.
2.7 V ≤ VDD ≤ 5.5 V
167
Note 1
500
Note 1
1000
Note 1
2.4 V ≤ VDD ≤ 5.5 V
250
Note 1
500
Note 1
1000
Note 1
ns
1.8 V ≤ VDD ≤ 5.5 V
−
500
Note 1
1000
Note 1
ns
1.6 V ≤ VDD ≤ 5.5 V
−
−
1000
Note 1
ns
ns
SCKp high-/low-level
tKH1,
4.0 V ≤ VDD ≤ 5.5 V
tKCY1/2−12
tKCY1/2−50
tKCY1/2−50
ns
width
tKL1
2.7 V ≤ VDD ≤ 5.5 V
tKCY1/2−18
tKCY1/2−50
tKCY1/2−50
ns
2.4 V ≤ VDD ≤ 5.5 V
tKCY1/2−38
tKCY1/2−50
tKCY1/2−50
ns
1.8 V ≤ VDD ≤ 5.5 V
−
tKCY1/2−50
tKCY1/2−50
ns
1.6 V ≤ VDD ≤ 5.5 V
−
−
tKCY1/2−100
ns
2.7 V ≤ VDD ≤ 5.5 V
44
110
110
ns
2.4 V ≤ VDD ≤ 5.5 V
75
110
110
ns
1.8 V ≤ VDD ≤ 5.5 V
−
110
110
ns
SIp setup time
tSIK1
(to SCKp↑)Note 2
SIp hold time
tKSI1
(from SCKp↑)Note 3
Delay time from
tKSO1
SCKp↓ to
SOp outputNote 4
1.8 V ≤ VDD ≤ 5.5 V
−
−
220
ns
2.4 V ≤ VDD ≤ 5.5 V
19
19
19
ns
1.8 V ≤ VDD ≤ 5.5 V
−
19
19
ns
1.6 V ≤ VDD ≤ 5.5 V
−
−
19
ns
C = 30 pF
Note 5
2.4 V ≤ VDD ≤ 5.5 V
25
25
25
ns
1.8 V ≤ VDD ≤ 5.5 V
−
25
25
ns
1.6 V ≤ VDD ≤ 5.5 V
−
−
25
ns
Notes 1. The value must also be equal to or more than 2/fCLK for CSI00 and equal to or more than 4/fCLK for CSI10.
2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes
“from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
5. C is the load capacitance of the SCKp and SOp output lines.
Caution Select the normal input buffer for the SIp pin and the normal output mode for the SOp pin and SCKp pin
by using port input mode register g (PIMg) and port output mode register g (POMg).
Remarks 1.
p: CSI number (p = 00, 10), m: Unit number (m = 0), n: Channel number (n = 0, 2),
g: PIM and POM numbers (g = 0, 1)
2.
fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number,
n: Channel number (mn = 00, 02))
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(3) During communication at same potential (CSI mode) (slave mode, SCKp... external clock input)
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
SCKp cycle
tKCY2
4.0 V ≤ VDD ≤ 5.5 V
timeNote 5
2.7 V ≤ VDD ≤ 5.5 V
MAX.
MIN.
MAX.
MIN.
Unit
MAX.
fMCK > 20 MHz
8/fMCK
−
−
ns
fMCK ≤ 20 MHz
6/fMCK
6/fMCK
6/fMCK
ns
fMCK > 16 MHz
8/fMCK
−
−
ns
fMCK ≤ 16 MHz
6/fMCK
6/fMCK
6/fMCK
ns
6/fMCK
6/fMCK
6/fMCK
ns
2.4 V ≤ VDD ≤ 5.5 V
and 500
1.8 V ≤ VDD ≤ 5.5 V
−
6/fMCK
6/fMCK
ns
1.6 V ≤ VDD ≤ 5.5 V
−
−
6/fMCK
ns
SCKp high-/low- tKH2,
4.0 V ≤ VDD ≤ 5.5 V
tKCY2/2−7
tKCY2/2−7
tKCY2/2−7
ns
level width
2.7 V ≤ VDD ≤ 5.5 V
tKCY2/2−8
tKCY2/2−8
tKCY2/2−8
ns
2.4 V ≤ VDD ≤ 5.5 V
tKCY2/2−18
tKCY2/2−18
tKCY2/2−18
ns
1.8 V ≤ VDD ≤ 5.5 V
−
tKCY2/2−18
tKCY2/2−18
ns
1.6 V ≤ VDD ≤ 5.5 V
−
−
tKCY2/2−66
ns
tKL2
SIp setup time
tSIK2
(to SCKp↑)Note 1
SIp hold time
tKSI2
(from
SCKp↑)Note 2
Delay time from
tKSO2
2.7 V ≤ VDD ≤ 5.5 V
1/fMCK+20
1/fMCK+30
1/fMCK+30
ns
2.4 V ≤ VDD ≤ 5.5 V
1/fMCK+30
1/fMCK+30
1/fMCK+30
ns
1.8 V ≤ VDD ≤ 5.5 V
−
1/fMCK+30
1/fMCK+30
ns
1.6 V ≤ VDD ≤ 5.5 V
−
−
1/fMCK+40
ns
2.4 V ≤ VDD ≤ 5.5 V
1/fMCK+31
1/fMCK+31
1/fMCK+31
ns
1.8 V ≤ VDD ≤ 5.5 V
−
1/fMCK+31
1/fMCK+31
ns
1.6 V ≤ VDD ≤ 5.5 V
−
−
1/fMCK+250
ns
C = 30 pF
Note 4
SCKp↓ to SOp
outputNote 3
2.7 V ≤ VDD ≤ 5.5 V
2/fMCK+44
2/fMCK+110
2/fMCK+110 ns
2.4 V ≤ VDD ≤ 5.5 V
2/fMCK+75
2/fMCK+110
2/fMCK+110 ns
1.8 V ≤ VDD ≤ 5.5 V
−
2/fMCK+110
2/fMCK+110 ns
1.6 V ≤ VDD ≤ 5.5 V
−
−
2/fMCK+220 ns
Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes
“from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. C is the load capacitance of the SOp output lines.
5. Transfer rate in SNOOZE mode: MAX. 1 Mbps
Caution Select the normal input buffer for the SIp pin and SCKp pin and the normal output mode for the SOp pin
by using port input mode register g (PIMg) and port output mode register g (POMg).
Remarks 1.
p: CSI number (p = 00, 10), m: Unit number (m = 0), n: Channel number (n = 0, 2),
g: PIM number (g = 0, 1)
2.
fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number,
n: Channel number (mn = 00, 02))
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
CSI mode connection diagram (during communication at same potential)
SCK
SCKp
RL78
microcontroller
SIp
SO
SOp
SI
User device
CSI mode serial transfer timing (during communication at same potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.)
tKCY1, 2
tKL1, 2
tKH1, 2
SCKp
tSIK1, 2
SIp
tKSI1, 2
Input data
tKSO1, 2
Output data
SOp
CSI mode serial transfer timing (during communication at same potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
tKCY1, 2
tKH1, 2
tKL1, 2
SCKp
tSIK1, 2
SIp
tKSI1, 2
Input data
tKSO1, 2
SOp
Remarks 1.
2.
Output data
p: CSI number (p = 00, 10)
m: Unit number, n: Channel number (mn = 00, 02)
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(4) During communication at same potential (simplified I2C mode)
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
SCLr clock
fSCL
2.7 V ≤ VDD ≤ 5.5 V,
1000
Cb = 50 pF, Rb = 2.7 kΩ
frequency
MAX.
MIN.
MAX.
MIN.
Unit
MAX.
Note 1
400Note 1
kHz
400Note 1
400Note 1
400Note 1
kHz
300Note 1
300Note 1
300Note 1
kHz
−
–
250Note 1
kHz
400
Note
1
1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
1.8 V (2.4 VNote 3) ≤ VDD < 2.7 V,
Cb = 100 pF, Rb = 5 kΩ
1.6 V ≤ VDD < 1.8 V,
Cb = 100 pF, Rb = 5 kΩ
Hold time when
tLOW
SCLr = “L”
2.7 V ≤ VDD ≤ 5.5 V,
475
1150
1150
ns
1150
1150
1150
ns
1550
1550
1550
ns
–
–
1850
ns
475
1150
1150
ns
1150
1150
1150
ns
1550
1550
1550
ns
–
–
1850
ns
ns
Cb = 50 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
1.8 V (2.4 VNote 3) ≤ VDD < 2.7 V,
Cb = 100 pF, Rb = 5 kΩ
1.6 V ≤ VDD < 1.8 V,
Cb = 100 pF, Rb = 5 kΩ
Hold time when
tHIGH
SCLr = “H”
2.7 V ≤ VDD ≤ 5.5 V,
Cb = 50 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
1.8 V (2.4 VNote 3) ≤ VDD < 2.7 V,
Cb = 100 pF, Rb = 5 kΩ
1.6 V ≤ VDD < 1.8 V,
Cb = 100 pF, Rb = 5 kΩ
Data setup time
tSU:DAT
(reception)
2.7 V ≤ VDD ≤ 5.5 V,
1/fMCK+
1/fMCK+
1/fMCK+
Cb = 50 pF, Rb = 2.7 kΩ
85Note 2
145Note 2
145Note 2
1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
1.8 V (2.4 VNote 3) ≤ VDD < 2.7 V,
Cb = 100 pF, Rb = 5 kΩ
1/fMCK+
1/fMCK+
1/fMCK+
145Note 2
145Note 2
145Note 2
1/fMCK+
1/fMCK+
1/fMCK+
230Note 2
230Note 2
230Note 2
–
–
1.6 V ≤ VDD < 1.8 V,
(transmission)
tHD:DAT
2.7 V ≤ VDD ≤ 5.5 V,
ns
1/fMCK+
Cb = 100 pF, Rb = 5 kΩ
Data hold time
ns
ns
290Note 2
0
305
0
305
0
305
ns
0
355
0
355
0
355
ns
0
405
0
405
0
405
ns
–
–
–
–
0
405
ns
Cb = 50 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
1.8 V (2.4 VNote 3) ≤ VDD < 2.7 V,
Cb = 100 pF, Rb = 5 kΩ
1.6 V ≤ VDD < 1.8 V,
Cb = 100 pF, Rb = 5 kΩ
(Notes, Caution, and Remarks are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 38 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Notes 1.
Caution
The value must also be equal to or less than fMCK/4.
2.
Set the fMCK value to keep the hold time of SCLr = “L” and SCLr = “H”.
3.
Condition in the HS (high-speed main) mode
Select the normal input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin
and the normal output mode for the SCLr pin by using port input mode register g (PIMg) and port
output mode register g (POMg).
Simplified I2C mode connection diagram (during communication at same potential)
VDD
Rb
SDA
SDAr
RL78
microcontroller
User device
SCL
SCLr
Simplified I2C mode serial transfer timing (during communication at same potential)
1/fSCL
tLOW
tHIGH
SCLr
SDAr
tHD : DAT
tSU : DAT
Remarks 1. Rb[Ω]: Communication line (SDAr) pull-up resistance, Cb[F]: Communication line (SDAr, SCLr) load
capacitance
2. r: IIC number (r = 00, 10), g: PIM and POM number (g = 0, 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0),
n: Channel number (n = 0-3), mn = 00-03, 10-13)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 39 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(5) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) (1/2)
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
Transfer rate
Reception
4.0 V ≤ VDD ≤ 5.5 V,
MAX.
fMCK/6
2.7 V ≤ Vb ≤ 4.0 V
Note
MIN.
MAX.
fMCK/6
Note
MIN.
Unit
MAX.
fMCK/6Note
bps
1
1
1
4.0
1.3
0.6
Mbps
fMCK/6Note
fMCK/6Note
fMCK/6Note
bps
1
1
1
4.0
1.3
0.6
Mbps
bps
Theoretical value of the
maximum transfer rate
fMCK = fCLKNote 3
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V
Theoretical value of the
maximum transfer rate
fMCK = fCLKNote 3
1.8 V (2.4 VNote 4) ≤ VDD < 3.3
V,
fMCK/6
fMCK/6
fMCK/6
Note s1, 2
Notes 1, 2
Notes 1, 2
4.0
1.3
0.6
1.6 V ≤ Vb ≤ 2.0 V
Theoretical value of the
Mbps
maximum transfer rate
fMCK = fCLKNote 3
Notes 1. Transfer rate in SNOOZE mode is 4800 bps only.
2. Use it with VDD ≥ Vb.
3. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are:
HS (high-speed main) mode:
24 MHz (2.7 V ≤ VDD ≤ 5.5 V)
16 MHz (2.4 V ≤ VDD ≤ 5.5 V)
LS (low-speed main) mode:
8 MHz (1.8 V ≤ VDD ≤ 5.5 V)
LV (low-voltage main) mode:
4 MHz (1.6 V ≤ VDD ≤ 5.5 V)
4. Condition in the HS (high-speed main) mode
Caution
Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for
the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). For
VIH and VIL, see the DC characteristics with TTL input buffer selected.
Remarks 1.
Vb[V]: Communication line voltage
2.
q: UART number (q = 0 to 3), g: PIM and POM number (g = 0, 1, 3)
3.
fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number,
n: Channel number (mn = 00 to 03, 10 to 13)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 40 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(5) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) (2/2)
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
Transfer rate
Trans
4.0 V ≤ VDD ≤ 5.5 V,
MAX.
MIN.
MAX.
MIN.
Unit
MAX.
bps
Note 1
Note 1
Note 1
2.8Note 2
2.8Note 2
2.8Note 2 Mbps
Note 3
Note 3
Note 3
1.2Note 4
1.2Note 4
1.2Note 4 Mbps
Notes
Notes
Notes
5, 6
5, 6
5, 6
0.43Note 7
0.43Note 7
mission 2.7 V ≤ Vb ≤ 4.0 V
Theoretical value of the maximum
transfer rate
(Cb = 50 pF, Rb = 1.4 kΩ, Vb = 2.7 V)
2.7 V ≤ VDD < 4.0 V,
bps
2.3 V ≤ Vb ≤ 2.7 V
Theoretical value of the maximum
transfer rate
(Cb = 50 pF, Rb = 2.7 kΩ, Vb = 2.3 V)
1.8 V (2.4 VNote 8) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V
Theoretical value of the maximum
bps
0.43Note 7 Mbps
transfer rate
(Cb = 50 pF, Rb = 5.5 kΩ, Vb = 1.6 V)
Notes 1.
The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum
transfer rate.
Expression for calculating the transfer rate when 4.0 V ≤ VDD ≤ 5.5 V and 2.7 V ≤ Vb ≤ 4.0 V
1
Maximum transfer rate =
{−Cb × Rb × ln (1 −
Baud rate error (theoretical value) =
2.2
Vb )} × 3
[bps]
2.2
1
− {−Cb × Rb × ln (1 − Vb )}
Transfer rate × 2
1
( Transfer rate ) × Number of transferred bits
× 100 [%]
* This value is the theoretical value of the relative difference between the transmission and reception sides.
2.
This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 1 above to calculate the maximum transfer rate under conditions of the customer.
3.
The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum
transfer rate.
Expression for calculating the transfer rate when 2.7 V ≤ VDD < 4.0 V and 2.3 V ≤ Vb ≤ 2.7 V
1
Maximum transfer rate =
{−Cb × Rb × ln (1 −
Baud rate error (theoretical value) =
2.0
Vb )} × 3
[bps]
2.0
1
− {−Cb × Rb × ln (1 − Vb )}
Transfer rate × 2
1
( Transfer rate ) × Number of transferred bits
× 100 [%]
* This value is the theoretical value of the relative difference between the transmission and reception sides.
4.
This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 3 above to calculate the maximum transfer rate under conditions of the customer.
5.
Use it with VDD ≥ Vb.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 41 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Notes 6.
The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum
transfer rate.
Expression for calculating the transfer rate when 1.8 V (2.4 VNote 8) ≤ VDD < 3.3 V and 1.6 V ≤ Vb ≤ 2.0 V
1
Maximum transfer rate =
{−Cb × Rb × ln (1 −
Baud rate error (theoretical value) =
1.5
Vb )} × 3
[bps]
1.5
1
− {−Cb × Rb × ln (1 − Vb )}
Transfer rate × 2
1
( Transfer rate ) × Number of transferred bits
× 100 [%]
* This value is the theoretical value of the relative difference between the transmission and reception sides.
7.
This value as an example is calculated when the conditions described in the “Conditions” column are met.
8.
Condition in the HS (high-speed main) mode
Refer to Note 6 above to calculate the maximum transfer rate under conditions of the customer.
Caution Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for the
TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH
and VIL, see the DC characteristics with TTL input buffer selected.
UART mode connection diagram (during communication at different potential)
Vb
Rb
TxDq
Rx
RL78
microcontroller
RxDq
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
User device
Tx
Page 42 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
UART mode bit width (during communication at different potential) (reference)
1/Transfer rate
Low-bit width
High-bit width
Baud rate error tolerance
TxDq
1/Transfer rate
High-/Low-bit width
Baud rate error tolerance
RxDq
Remarks 1.
Rb[Ω]: Communication line (TxDq) pull-up resistance, Cb[F]: Communication line (TxDq) load capacitance,
Vb[V]: Communication line voltage
2.
q: UART number (q = 0 to 3), g: PIM and POM number (g = 0, 1, 3)
3.
fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn).
m: Unit number, n: Channel number (mn = 00 to 03, 10 to 13))
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 43 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(6) Communication at different potential (2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output,
corresponding CSI00 only)
(TA = −40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
SCKp cycle time
tKCY1
tKCY1 ≥ 2/fCLK
4.0 V ≤ VDD ≤ 5.5 V,
MAX.
MIN.
MAX.
MIN.
Unit
MAX.
200
1150
1150
ns
300
1150
1150
ns
tKCY1/2 −
tKCY1/2 −
tKCY1/2 −
ns
50
50
50
tKCY1/2 −
tKCY1/2 −
tKCY1/2 −
120
120
120
tKCY1/2 −
tKCY1/2 −
tKCY1/2 −
7
50
50
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
SCKp high-level
tKH1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
width
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
SCKp low-level
tKL1
width
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
SIp setup time
tSIK1
(to SCKp↑)Note 1
ns
ns
tKCY1/2 −
tKCY1/2 −
tKCY1/2 −
Cb = 20 pF, Rb = 2.7 kΩ
10
50
50
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
58
479
479
ns
121
479
479
ns
10
10
10
ns
10
10
10
ns
ns
Cb = 20 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
SIp hold time
tKSI1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
(from SCKp↑)Note
1
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
Delay time from
tKSO1
SCKp↓ to
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
60
60
60
ns
130
130
130
ns
Cb = 20 pF, Rb = 1.4 kΩ
SOp outputNote 1
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
SIp setup time
tSIK1
(to SCKp↓)Note 2
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
23
110
110
ns
33
110
110
ns
10
10
10
ns
10
10
10
ns
Cb = 20 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
SIp hold time
tKSI1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
(from SCKp↓)Note
2
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
Delay time from
SCKp↑ to
SOp outputNote 2
tKSO1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
10
10
10
ns
10
10
10
ns
Cb = 20 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
(Notes, Caution and Remarks are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 44 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.
2. When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
Caution Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the
SOp pin and SCKp pin by using port input mode register g (PIMg) and port output mode register g
(POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
Remarks 1. Rb[Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb[F]: Communication line (SCKp, SOp) load
capacitance, Vb[V]: Communication line voltage
2. p: CSI number (p = 00), m: Unit number (m = 0), n: Channel number (n = 0),
g: PIM and POM number (g = 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number,
n: Channel number (mn = 00))
4. This specification is valid only when CSI00’s peripheral I/O redirect function is not used.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 45 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(7) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (1/2)
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
SCKp cycle time
tKCY1
tKCY1 ≥ 4/fCLK
4.0 V ≤ VDD ≤ 5.5 V,
MAX.
MIN.
MAX.
MIN.
Unit
MAX.
300
1150
1150
ns
500
1150
1150
ns
1150
1150
1150
ns
tKCY1/2 −
tKCY1/2 −
tKCY1/2 −
ns
75
75
75
tKCY1/2 −
tKCY1/2 −
tKCY1/2 −
170
170
170
tKCY1/2 −
tKCY1/2 −
tKCY1/2 −
458
458
458
tKCY1/2 −
tKCY1/2 −
tKCY1/2 −
12
50
50
tKCY1/2 −
tKCY1/2 −
tKCY1/2 −
18
50
50
tKCY1/2 −
tKCY1/2 −
tKCY1/2 −
50
50
50
81
479
479
ns
177
479
479
ns
479
479
479
ns
19
19
19
ns
19
19
19
ns
19
19
19
ns
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 1) ≤ VDD < 3.3
V,
1.6 V ≤ Vb ≤ 1.8 VNote 2,
Cb = 30 pF, Rb = 5.5 kΩ
SCKp high-level
tKH1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
width
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 1) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 2,
ns
ns
Cb = 30 pF, Rb = 5.5 kΩ
SCKp low-level
tKL1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
width
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 1) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 2,
ns
ns
ns
Cb = 30 pF, Rb = 5.5 kΩ
SIp setup time
tSIK1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
(to SCKp↑)Note 3
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 1) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 2,
Cb = 30 pF, Rb = 5.5 kΩ
SIp hold time
tKSI1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
(from SCKp↑)Note
3
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 1) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 2,
Cb = 30 pF, Rb = 5.5 kΩ
Delay time from
SCKp↓ to
SOp outputNote 3
tKSO1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
100
100
100
ns
195
195
195
ns
483
483
483
ns
Cb = 30 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 1) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 2,
Cb = 30 pF, Rb = 5.5 kΩ
(Notes and Caution are listed on the next page, and Remarks are listed on the page after the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 46 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(7) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (2/2)
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
SIp setup time
tSIK1
(to SCKp↓)Note 4
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
MAX.
MIN.
MAX.
MIN.
Unit
MAX.
44
110
110
ns
44
110
110
ns
110
110
110
ns
19
19
19
ns
19
19
19
ns
19
19
19
ns
Cb = 30 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 1) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 2,
Cb = 30 pF, Rb = 5.5 kΩ
SIp hold time
tKSI1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
(from SCKp↓)Note
4
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 1) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 2,
Cb = 30 pF, Rb = 5.5 kΩ
Delay time from
SCKp↑ to
tKSO1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
25
25
25
ns
25
25
25
ns
25
25
25
ns
Cb = 30 pF, Rb = 1.4 kΩ
SOp outputNote 4
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 1) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 2,
Cb = 30 pF, Rb = 5.5 kΩ
Notes 1.
Condition in HS (high-speed main) mode
2.
Use it with VDD ≥ Vb.
3.
When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.
4.
When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
Caution Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the
SOp pin and SCKp pin by using port input mode register g (PIMg) and port output mode register g
(POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
CSI mode connection diagram (during communication at different potential)
Vb
Rb
SCKp
RL78
microcontroller
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Vb
Rb
SCK
SIp
SO
SOp
SI
User device
Page 47 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
CSI mode serial transfer timing (master mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.)
tKCY1
tKL1
tKH1
SCKp
tSIK1
SIp
tKSI1
Input data
tKSO1
Output data
SOp
CSI mode serial transfer timing (master mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
tKCY1
tKL1
tKH1
SCKp
tSIK1
SIp
tKSI1
Input data
tKSO1
SOp
Output data
Remarks 1. Rb[Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb[F]: Communication line (SCKp, SOp) load
capacitance, Vb[V]: Communication line voltage
2. p: CSI number (p = 00, 10), m: Unit number , n: Channel number (mn = 00, 02),
g: PIM and POM number (g = 0, 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn).
m: Unit number, n: Channel number (mn = 00)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 48 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (slave mode, SCKp... external clock input)
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
SCKp cycle
tKCY2
timeNote 1
–
–
ns
8 MHz < fMCK ≤ 20 MHz
10/fMCK
–
–
ns
4 MHz < fMCK ≤ 8 MHz
8/fMCK
16/fMCK
–
ns
fMCK ≤ 4 MHz
6/fMCK
10/fMCK
10/fMCK
ns
2.7 V ≤ VDD < 4.0 V, 20 MHz < fMCK
16/fMCK
–
–
ns
2.3 V ≤ Vb ≤
16 MHz < fMCK ≤ 20 MHz
14/fMCK
–
–
ns
8 MHz < fMCK ≤ 16 MHz
12/fMCK
–
–
ns
4 MHz < fMCK ≤ 8 MHz
8/fMCK
16/fMCK
–
ns
fMCK ≤ 4 MHz
6/fMCK
10/fMCK
10/fMCK
ns
20 MHz < fMCK
36/fMCK
–
–
ns
16 MHz < fMCK ≤ 20 MHz
32/fMCK
–
–
ns
8 MHz < fMCK ≤ 16 MHz
26/fMCK
–
–
ns
4 MHz < fMCK ≤ 8 MHz
16/fMCK
16/fMCK
–
ns
fMCK ≤ 4 MHz
10/fMCK
10/fMCK
10/fMCK
ns
tKCY2/2
tKCY2/2
tKCY2/2
ns
− 12
− 50
− 50
tKCY2/2
tKCY2/2
tKCY2/2
− 18
− 50
− 50
1.6 V ≤ Vb ≤
2.0 VNote 3
)≤
Note 2
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V
1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V,
SIp setup time
tSIK2
tKCY2/2
tKCY2/2
tKCY2/2
1.6 V ≤ Vb ≤ 2.0 VNote 3
− 50
− 50
− 50
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V
1/fMCK
1/fMCK
1/fMCK
+ 20
+ 30
+ 30
1/fMCK
1/fMCK
1/fMCK
+ 20
+ 30
+ 30
1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V,
1/fMCK
1/fMCK
1/fMCK
1.6 V ≤ Vb ≤ 2.0 VNote 3
+ 30
+ 30
+ 30
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V
1/fMCK
1/fMCK
1/fMCK
+ 31
+ 31
+ 31
1/fMCK
1/fMCK
1/fMCK
+ 31
+ 31
+ 31
1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V,
1/fMCK
1/fMCK
1/fMCK
1.6 V ≤ Vb ≤ 2.0 VNote 3
+ 31
+ 31
+ 31
(to SCKp↑)Note 4
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V
SIp hold time
tKSI2
(from
SCKp↑)Note 5
Delay time
from SCKp↓ to
SOp outputNote 6
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V
tKSO2
MAX.
12/fMCK
VDD < 3.3 V,
tKH2,
MIN.
20 MHz < fMCK
1.8 V (2.4 V
tKL2
MAX.
2.7 V ≤ Vb ≤
2.7 V
/low-level width
MIN.
4.0 V ≤ VDD ≤ 5.5 V,
4.0 V
SCKp high-
MAX.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
2/fMCK
2/fMCK
2/fMCK
Cb = 30 pF, Rb = 1.4 kΩ
+ 120
+ 573
+ 573
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
2/fMCK
2/fMCK
2/fMCK
Cb = 30 pF, Rb = 2.7 kΩ
+ 214
+ 573
+ 573
1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V,
2/fMCK
2/fMCK
2/fMCK
1.6 V ≤ Vb ≤ 2.0 VNote 3,
+ 573
+ 573
+ 573
ns
ns
ns
Cb = 30 pF, Rb = 5.5 kΩ
(Notes and Caution are listed on the next page, and Remarks are listed on the page after the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 49 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Notes 1. Transfer rate in SNOOZE mode: MAX. 1 Mbps
2. Condition in HS (high-speed main) mode
3. Use it with VDD ≥ Vb.
4. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
5. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
6. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes
“from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
Caution Select the TTL input buffer for the SIp pin and SCKp pin and the N-ch open drain output (VDD tolerance)
mode for the SOp pin by using port input mode register g (PIMg) and port output mode register g
(POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
CSI mode connection diagram (during communication at different potential)
Vb
Rb
SCKp
RL78
microcontroller
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
SCK
SIp
SO
SOp
SI
User device
Page 50 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
CSI mode serial transfer timing (slave mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.)
tKCY2
tKL2
tKH2
SCKp
tSIK2
SIp
tKSI2
Input data
tKSO2
Output data
SOp
CSI mode serial transfer timing (slave mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
tKCY2
tKL2
tKH2
SCKp
tSIK2
SIp
tKSI2
Input data
tKSO2
SOp
Output data
Remarks 1. Rb[Ω]: Communication line (SOp) pull-up resistance, Cb[F]: Communication line (SOp) load capacitance,
Vb[V]: Communication line voltage
2. p: CSI number (p = 00, 10), m: Unit number, n: Channel number (mn = 00, 02),
g: PIM and POM number (g = 0, 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn)
m: Unit number, n: Channel number (mn = 00, 02))
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 51 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(9) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode) (1/2)
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
SCLr clock
fSCL
4.0 V ≤ VDD ≤ 5.5 V,
1000
2.7 V ≤ Vb ≤ 4.0 V,
frequency
MAX.
MIN.
MAX.
MIN.
Unit
MAX.
Note 1
300Note 1
kHz
300Note 1
300Note 1
kHz
400Note 1
300Note 1
300Note 1
kHz
400Note 1
300Note 1
300Note 1
kHz
300Note 1
300Note 1
300Note 1
kHz
300
Note
1
Cb = 50 pF, Rb = 2.7 kΩ
2.7 V ≤ VDD < 4.0 V,
1000Note
2.3 V ≤ Vb ≤ 2.7 V,
1
Cb = 50 pF, Rb = 2.7 kΩ
4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 3,
Cb = 100 pF, Rb = 5.5 kΩ
Hold time when
tLOW
4.0 V ≤ VDD ≤ 5.5 V,
475
1550
1550
ns
475
1550
1550
ns
1150
1550
1550
ns
1150
1550
1550
ns
1550
1550
1550
ns
245
610
610
ns
200
610
610
ns
675
610
610
ns
600
610
610
ns
610
610
610
ns
2.7 V ≤ Vb ≤ 4.0 V,
SCLr = “L”
Cb = 50 pF, Rb = 2.7 kΩ
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 50 pF, Rb = 2.7 kΩ
4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 3,
Cb = 100 pF, Rb = 5.5 kΩ
Hold time when
SCLr = “H”
tHIGH
4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 50 pF, Rb = 2.7 kΩ
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 50 pF, Rb = 2.7 kΩ
4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 3,
Cb = 100 pF, Rb = 5.5 kΩ
(Notes and Caution are listed on the next page, and Remarks are listed on the page after the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 52 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(9) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode) (2/2)
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
Data setup time
tSU:DAT
(reception)
MAX.
MIN.
MAX.
MIN.
4.0 V ≤ VDD ≤ 5.5 V,
1/fMCK+
1/fMCK+
1/fMCK+
2.7 V ≤ Vb ≤ 4.0 V,
135Note 4
190Note 4
190Note 4
Unit
MAX.
ns
Cb = 50 pF, Rb = 2.7 kΩ
2.7 V ≤ VDD < 4.0 V,
1/fMCK+
1/fMCK+
1/fMCK+
2.3 V ≤ Vb ≤ 2.7 V,
135Note 4
190Note 4
190Note 4
ns
Cb = 50 pF, Rb = 2.7 kΩ
4.0 V ≤ VDD ≤ 5.5 V,
1/fMCK+
1/fMCK+
1/fMCK+
2.7 V ≤ Vb ≤ 4.0 V,
190Note 4
190Note 4
190Note 4
ns
Cb = 100 pF, Rb = 2.8 kΩ
2.7 V ≤ VDD < 4.0 V,
1/fMCK+
1/fMCK+
1/fMCK+
2.3 V ≤ Vb ≤ 2.7 V,
190Note 4
190Note 4
190Note 4
ns
Cb = 100 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 3,
1/fMCK+
1/fMCK+
1/fMCK+
190Note 4
190Note 4
190Note 4
ns
Cb = 100 pF, Rb = 5.5 kΩ
Data hold time
(transmission)
tHD:DAT
4.0 V ≤ VDD ≤ 5.5 V,
0
305
0
305
0
305
ns
0
305
0
305
0
305
ns
0
355
0
355
0
355
ns
0
355
0
355
0
355
ns
0
405
0
405
0
405
ns
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 50 pF, Rb = 2.7 kΩ
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 50 pF, Rb = 2.7 kΩ
4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 VNote 3,
Cb = 100 pF, Rb = 5.5 kΩ
Notes 1. The value must also be equal to or less than fMCK/4.
2. Condition in HS (high-speed main) mode
3. Use it with VDD ≥ Vb.
4. Set the fMCK value to keep the hold time of SCLr = “L” and SCLr = “H”.
Caution
Select the TTL input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin and
the N-ch open drain output (VDD tolerance) mode for the SCLr pin by using port input mode register g
(PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL
input buffer selected.
(Remarks are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 53 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Simplified I2C mode connection diagram (during communication at different potential)
Vb
Vb
Rb
Rb
SDA
SDAr
RL78
microcontroller
User device
SCL
SCLr
Simplified I2C mode serial transfer timing (during communication at different potential)
1/fSCL
tLOW
tHIGH
SCLr
SDAr
tHD : DAT
tSU : DAT
Remarks 1. Rb[Ω]: Communication line (SDAr, SCLr) pull-up resistance, Cb[F]: Communication line (SDAr, SCLr) load
capacitance, Vb[V]: Communication line voltage
2. r: IIC number (r = 00, 10), g: PIM, POM number (g = 0, 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn).
m: Unit number, n: Channel number (mn = 00, 02)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 54 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.5.2 Serial interface IICA
(1) I2C standard mode (1/2)
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
SCLA0 clock
Symbol
fSCL
frequency
Conditions
tSU:STA
restart condition
Hold time
Note 1
Hold time when
tLOW
SCLA0 = “L”
Hold time when
SCLA0 = “H”
main) Mode
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Unit
2.7 V ≤ VDD ≤ 5.5 V
0
100
0
100
0
100
kHz
1.8 V (2.4 V
)≤
0
100
0
100
0
100
kHz
1.6 V ≤ VDD ≤ 5.5 V
–
–
–
–
0
100
kHz
Note 3
VDD ≤ 5.5 V
2.7 V ≤ VDD ≤ 5.5 V
) ≤ VDD ≤ 5.5 V
Note 3
4.7
4.7
4.7
μs
4.7
4.7
4.7
μs
4.7
μs
1.6 V ≤ VDD ≤ 5.5 V
–
2.7 V ≤ VDD ≤ 5.5 V
4.0
4.0
4.0
μs
1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V
4.0
4.0
4.0
μs
4.0
μs
–
–
–
1.6 V ≤ VDD ≤ 5.5 V
–
2.7 V ≤ VDD ≤ 5.5 V
4.7
4.7
4.7
μs
4.7
4.7
4.7
μs
4.7
μs
1.8 V (2.4 V
tHIGH
LV (low-voltage
main) Mode
mode: fCLK
1.8 V (2.4 V
tHD:STA
LS (low-speed
main) Mode
Normal
≥ 1 MHz
Setup time of
HS (high-speed
) ≤ VDD ≤ 5.5 V
Note 3
–
–
–
1.6 V ≤ VDD ≤ 5.5 V
–
2.7 V ≤ VDD ≤ 5.5 V
4.0
4.0
4.0
μs
4.0
4.0
4.0
μs
4.0
μs
1.8 V (2.4 V
) ≤ VDD ≤ 5.5 V
Note 3
1.6 V ≤ VDD ≤ 5.5 V
–
–
–
–
–
–
–
(Notes, Caution and Remark are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 55 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(1) I2C standard mode (2/2)
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
Data setup time
tSU:DAT
(reception)
2.7 V ≤ VDD ≤ 5.5 V
1.8 V (2.4 V
Data hold time
tHD:DAT
(transmission)Note 2
Setup time of stop
tSU:STO
tBUF
Caution
MAX.
250
250
250
ns
250
250
250
ns
ns
–
–
250
2.7 V ≤ VDD ≤ 5.5 V
0
3.45
0
3.45
0
3.45
μs
0
3.45
0
3.45
0
3.45
μs
1.6 V ≤ VDD ≤ 5.5 V
–
–
–
–
0
3.45
μs
2.7 V ≤ VDD ≤ 5.5 V
4.0
4.0
4.0
μs
4.0
4.0
4.0
μs
4.0
μs
) ≤ VDD ≤ 5.5 V
Note 3
) ≤ VDD ≤ 5.5 V
Note 3
1.6 V ≤ VDD ≤ 5.5 V
–
2.7 V ≤ VDD ≤ 5.5 V
4.7
4.7
4.7
μs
4.7
4.7
4.7
μs
4.7
μs
) ≤ VDD ≤ 5.5 V
Note 3
1.6 V ≤ VDD ≤ 5.5 V
3.
MIN.
–
1.8 V (2.4 V
Notes 1.
2.
MAX.
–
1.8 V (2.4 V
Bus-free time
MIN.
1.6 V ≤ VDD ≤ 5.5 V
1.8 V (2.4 V
condition
) ≤ VDD ≤ 5.5 V
Note 3
MAX.
Unit
–
–
–
–
–
–
–
The first clock pulse is generated after this period when the start/restart condition is detected.
The maximum value (MAX.) of tHD:DAT is during normal transfer and a wait state is inserted in the ACK
(acknowledge) timing.
Condition in HS (high-speed main) mode
The values in the above table are applied even when bit 2 (PIOR2) in the peripheral I/O redirection
register (PIOR) is 1. At this time, the pin characteristics (IOH1, IOL1, VOH1, VOL1) must satisfy the values in
the redirect destination.
Remark
The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up
resistor) at that time in each mode are as follows.
Standard mode: Cb = 400 pF, Rb = 2.7 kΩ
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 56 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(2) I2C fast mode
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
SCLA0 clock
Symbol
fSCL
frequency
Conditions
Fast
2.7 V ≤ VDD ≤
mode: fCLK
5.5 V
≥ 3.5 MHz
1.8 V (2.4 VNote 3)
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
Unit
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
0
400
0
400
0
400
kHz
0
400
0
400
0
400
kHz
≤ VDD ≤ 5.5 V
Setup time of
tSU:STA
restart condition
Hold time
Note 1
Hold time when
2.7 V ≤ VDD ≤ 5.5 V
1.8 V (2.4 V
tHD:STA
tLOW
SCLA0 =“L”
tHIGH
SCLA0 =“H”
tSU:DAT
(reception)
tHD:DAT
Setup time of stop
tSU:STO
condition
tBUF
3.
Caution
0.6
0.6
0.6
μs
0.6
0.6
μs
0.6
0.6
μs
2.7 V ≤ VDD ≤ 5.5 V
1.3
1.3
1.3
μs
1.3
1.3
1.3
μs
0.6
0.6
0.6
μs
0.6
0.6
0.6
μs
100
100
100
ns
100
100
100
ns
) ≤ VDD ≤ 5.5 V
Note 3
2.7 V ≤ VDD ≤ 5.5 V
) ≤ VDD ≤ 5.5 V
Note 3
2.7 V ≤ VDD ≤ 5.5 V
) ≤ VDD ≤ 5.5 V
Note 3
2.7 V ≤ VDD ≤ 5.5 V
0
0.9
0
0.9
0
0.9
μs
1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V
0
0.9
0
0.9
0
0.9
μs
2.7 V ≤ VDD ≤ 5.5 V
) ≤ VDD ≤ 5.5 V
Note 3
2.7 V ≤ VDD ≤ 5.5 V
1.8 V (2.4 V
Notes 1.
2.
μs
0.6
1.8 V (2.4 V
Bus-free time
0.6
0.6
1.8 V (2.4 V
Data hold time
(transmission)Note 2
0.6
2.7 V ≤ VDD ≤ 5.5 V
1.8 V (2.4 V
Data setup time
0.6
1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V
1.8 V (2.4 V
Hold time when
) ≤ VDD ≤ 5.5 V
Note 3
) ≤ VDD ≤ 5.5 V
Note 3
0.6
0.6
0.6
μs
0.6
0.6
0.6
μs
1.3
1.3
1.3
μs
1.3
1.3
1.3
μs
The first clock pulse is generated after this period when the start/restart condition is detected.
The maximum value (MAX.) of tHD:DAT is during normal transfer and a wait state is inserted in the ACK
(acknowledge) timing.
Condition in HS (high-speed main) mode
The values in the above table are applied even when bit 2 (PIOR2) in the peripheral I/O redirection
register (PIOR) is 1. At this time, the pin characteristics (IOH1, IOL1, VOH1, VOL1) must satisfy the values in
the redirect destination.
Remark
The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up
resistor) at that time in each mode are as follows.
Fast mode: Cb = 320 pF, Rb = 1.1 kΩ
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 57 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(3) I2C fast mode plus
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
SCLA0 clock
Conditions
fSCL
frequency
Fast mode
2.7 V ≤ VDD ≤
plus: fCLK ≥
5.5 V
HS (high-speed
LS (low-speed
LV (low-voltage
main) Mode
main) Mode
main) Mode
MIN.
MAX.
0
1000
MIN.
MAX.
MIN.
Unit
MAX.
–
–
kHz
10 MHz
tSU:STA
2.7 V ≤ VDD ≤ 5.5 V
0.26
–
–
μs
Hold timeNote 1
tHD:STA
2.7 V ≤ VDD ≤ 5.5 V
0.26
–
–
μs
Hold time when
tLOW
2.7 V ≤ VDD ≤ 5.5 V
0.5
–
–
μs
tHIGH
2.7 V ≤ VDD ≤ 5.5 V
0.26
–
–
μs
tSU:DAT
2.7 V ≤ VDD ≤ 5.5 V
50
–
–
ns
Data hold time
(transmission)Note 2
tHD:DAT
2.7 V ≤ VDD ≤ 5.5 V
0
–
–
μs
Setup time of stop
tSU:STO
2.7 V ≤ VDD ≤ 5.5 V
0.26
–
–
μs
tBUF
2.7 V ≤ VDD ≤ 5.5 V
0.5
–
–
μs
Setup time of restart
condition
SCLA0 =“L”
Hold time when
SCLA0 =“H”
Data setup time
(reception)
0.45
condition
Bus-free time
Notes 1.
2.
Caution
The first clock pulse is generated after this period when the start/restart condition is detected.
The maximum value (MAX.) of tHD:DAT is during normal transfer and a wait state is inserted in the ACK
(acknowledge) timing.
The values in the above table are applied even when bit 2 (PIOR2) in the peripheral I/O redirection
register (PIOR) is 1. At this time, the pin characteristics (IOH1, IOL1, VOH1, VOL1) must satisfy the values in
the redirect destination.
Remark
The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up
resistor) at that time in each mode are as follows.
Fast mode plus: Cb = 120 pF, Rb = 1.1 kΩ
IICA serial transfer timing
tLOW
tR
SCLA0
tHD:DAT
tHD:STA
tHIGH
tF
tSU:STA
tHD:STA
tSU:STO
tSU:DAT
SDAA0
tBUF
Stop
condition
Start
condition
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Restart
condition
Stop
condition
Page 58 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.6 Analog Characteristics
2.6.1 A/D converter characteristics
Classification of A/D converter characteristics
Reference Voltage
Input channel
Reference voltage (+) = AVREFP
Reference voltage (+) = VDD
Reference voltage (+) = VBGR
Reference voltage (−) = AVREFM
Reference voltage (−) = VSS
Reference voltage (−) = AVREFM
–
See 2.6.1 (2).
See 2.6.1 (3).
ANI0, ANI1
ANI16 to ANI25
See 2.6.1 (1).
Internal reference voltage
See 2.6.1 (1).
–
Temperature sensor output
voltage
(1) When reference voltage (+) = AVREFP/ANI0 (ADREFP1 = 0, ADREFP0 = 1), reference voltage (−) = AVREFM/ANI1
(ADREFM = 1), target pins: ANI16 to ANI25, internal reference voltage, and temperature sensor output voltage
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = AVREFP, Reference voltage (−) = AVREFM = 0 V)
Parameter
Symbol
Resolution
Conditions
MIN.
RES
Overall error
AINL
Note 1
Conversion time
tCONV
TYP.
MAX.
Unit
10
bit
1.2
±5.0
LSB
1.2
±8.5
LSB
8
10-bit resolution
1.8 V ≤ AVREFP ≤ 5.5 V
AVREFP = VDDNote 3
1.6 V ≤ AVREFP ≤ 5.5 V
10-bit resolution
3.6 V ≤ VDD ≤ 5.5 V
2.125
39
μs
Target pin:
2.7 V ≤ VDD ≤ 5.5 V
3.1875
39
μs
1.8 V ≤ VDD ≤ 5.5 V
17
39
μs
1.6 V ≤ VDD ≤ 5.5 V
57
95
μs
10-bit resolution
3.6 V ≤ VDD ≤ 5.5 V
2.375
39
μs
Target pin: Internal
2.7 V ≤ VDD ≤ 5.5 V
3.5625
39
μs
2.4 V ≤ VDD ≤ 5.5 V
17
39
μs
±0.35
%FSR
±0.60
%FSR
±0.35
%FSR
±0.60
%FSR
±3.5
LSB
ANI16 to ANI25
reference voltage,
and temperature
Note 4
sensor output
voltage
(HS (high-speed
main) mode)
Zero-scale error
Notes 1, 2
Full-scale error
Notes 1, 2
Integral linearity error
Note 1
Differential linearity errorNote 1
Analog input voltage
EZS
EFS
ILE
DLE
VAIN
10-bit resolution
1.8 V ≤ AVREFP ≤ 5.5 V
AVREFP = VDDNote 3
1.6 V ≤ AVREFP ≤ 5.5 V
10-bit resolution
1.8 V ≤ AVREFP ≤ 5.5 V
AVREFP = VDDNote 3
1.6 V ≤ AVREFP ≤ 5.5 V
10-bit resolution
1.8 V ≤ AVREFP ≤ 5.5 V
AVREFP = VDDNote 3
1.6 V ≤ AVREFP ≤ 5.5 V
±6.0
LSB
10-bit resolution
1.8 V ≤ AVREFP ≤ 5.5 V
±2.0
LSB
AVREFP = VDDNote 3
1.6 V ≤ AVREFP ≤ 5.5 VNote 4
±2.5
LSB
AVREFP
V
Note 4
Note 4
Note 4
ANI16 to ANI25
Internal reference voltage
0
VBGR
Note 5
V
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode))
Temperature sensor output voltage
VTMPS25Note 5
V
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode))
(Notes are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 59 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. When AVREFP < VDD, the MAX. values are as follows.
Overall error:
Add ±4 LSB to the MAX. value when AVREFP = VDD.
Zero-scale error/Full-scale error:
Add ±0.2%FSR to the MAX. value when AVREFP = VDD.
Integral linearity error/ Differential linearity error: Add ±2 LSB to the MAX. value when AVREFP = VDD.
4. Values when the conversion time is set to 57 μs (min.) and 95 μs (max.).
5. See 2.6.2 Temperature sensor/internal reference voltage characteristics.
(2) When reference voltage (+) = VDD (ADREFP1 = 0, ADREFP0 = 0), reference voltage (−) = VSS (ADREFM = 0),
target pins: ANI0, ANI1, ANI16 to ANI25, internal reference voltage, and temperature sensor output voltage
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VDD, Reference voltage (−) = VSS)
Parameter
Symbol
Resolution
Conditions
MIN.
RES
Overall error
AINL
Notes 1, 2
tCONV
MAX.
Unit
10
bit
1.2
±7.0
LSB
1.2
±10.5
LSB
8
10-bit resolution
1.8 V ≤ VDD ≤ 5.5 V
1.6 V ≤ VDD ≤ 5.5 V
Conversion time
TYP.
Note 3
10-bit resolution
3.6 V ≤ VDD ≤ 5.5 V
2.125
39
μs
Target pin:
2.7 V ≤ VDD ≤ 5.5 V
3.1875
39
μs
1.8 V ≤ VDD ≤ 5.5 V
17
39
μs
1.6 V ≤ VDD ≤ 5.5 V
57
95
μs
10-bit resolution
3.6 V ≤ VDD ≤ 5.5 V
2.375
39
μs
Target pin: Internal
2.7 V ≤ VDD ≤ 5.5 V
3.5625
39
μs
2.4 V ≤ VDD ≤ 5.5 V
17
39
μs
±0.60
%FSR
±0.85
%FSR
±0.60
%FSR
±0.85
%FSR
±4.0
LSB
ANI0, ANI1,
ANI16 to ANI25Note 3
reference voltage, and
temperature sensor
output voltage
(HS (high-speed main)
mode)
Zero-scale error
Notes 1, 2
EZS
10-bit resolution
1.8 V ≤ VDD ≤ 5.5 V
1.6 V ≤ VDD ≤ 5.5 V
Full-scale error
Notes 1, 2
EFS
10-bit resolution
1.8 V ≤ VDD ≤ 5.5 V
1.6 V ≤ VDD ≤ 5.5 V
Integral linearity error
Note 1
ILE
10-bit resolution
10-bit resolution
1
Analog input voltage
VAIN
Note 3
1.8 V ≤ VDD ≤ 5.5 V
1.6 V ≤ VDD ≤ 5.5 V
Differential linearity error Note DLE
Note 3
±6.5
LSB
1.8 V ≤ VDD ≤ 5.5 V
±2.0
LSB
1.6 V ≤ VDD ≤ 5.5 VNote 3
±2.5
LSB
VDD
V
Note 3
ANI0, ANI1, ANI16 to ANI25
0
Internal reference voltage
VBGR
Note 4
V
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode))
Temperature sensor output voltage
VTMPS25Note 4
V
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode))
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. Values when the conversion time is set to 57 μs (min.) and 95 μs (max.).
4. See 2.6.2 Temperature sensor/internal reference voltage characteristics.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 60 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(3) When reference voltage (+) = Internal reference voltage (ADREFP1 = 1, ADREFP0 = 0), reference voltage (−) =
AVREFM/ANI1 (ADREFM = 1), target pins: ANI0, ANI16 to ANI25
(TA = −40 to +85°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VBGRNote 3,
Reference voltage (−) = AVREFMNote 4 = 0 V, HS (high-speed main) mode)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Resolution
RES
Conversion time
tCONV
8-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
39
μs
Zero-scale errorNotes 1, 2
EZS
8-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±0.60
%FSR
Integral linearity errorNote 1
ILE
8-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±2.0
LSB
Differential linearity error
DLE
8-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±1.0
LSB
Note 1
Analog input voltage
8
VAIN
bit
17
0
VBGR
Note 3
V
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. See 2.6.2 Temperature sensor/internal reference voltage characteristics.
4. When reference voltage (−) = VSS, the MAX. values are as follows.
Zero-scale error:
Add ±0.35%FSR to the AVREFM MAX. value.
Integral linearity error:
Add ±0.5 LSB to the AVREFM MAX. value.
Differential linearity error: Add ±0.2 LSB to the AVREFM MAX. value.
2.6.2 Temperature sensor /internal reference voltage characteristics
(TA = −40 to +85°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, HS (high-speed main) mode)
Parameter
Symbol
Conditions
Temperature sensor output voltage
VTMPS25
ADS register = 80H, TA = +25°C
Internal reference output voltage
VBGR
ADS register = 81H
Temperature coefficient
FVTMPS
Temperature sensor that depends on the
MIN.
TYP.
MAX.
1.05
1.38
1.45
Unit
V
1.5
−3.6
V
mV/°C
temperature
Operation stabilization wait time
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
tAMP
5
μs
Page 61 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.6.3 Comparator characteristics
(TA = −40 to +85°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V )
Parameter
Symbol
Input voltage range
Conditions
MIN.
Ivref
TYP.
0
MAX.
Unit
VDD −
V
1.4
−0.3
Ivcmp
VDD +
V
0.3
Output delay
td
VDD = 3.0 V
Comparator high-speed mode,
Input slew rate > 50 mV/μs
standard mode
1.2
μs
2.0
μs
3.0
5.0
μs
0.66VDD
0.76VDD
0.86VDD
V
0.14VDD
0.24VDD
0.34VDD
V
Comparator high-speed mode,
window mode
Comparator low-speed mode,
standard mode
High-electric-potential
VTW+
Comparator high-speed mode,
window mode
reference voltage
Low-electric-potential
VTW−
reference voltage
Operation stabilization
Comparator high-speed mode,
window mode
tCMP
μs
100
wait time
Internal reference
VBGR
2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode
1.38
1.45
1.50
V
output voltageNote
Note Cannot be used in LS (low-speed main) mode, LV (low-voltage main) mode, subsystem clock operation, and
STOP mode.
2.6.4 POR circuit characteristics
(TA = −40 to +85°C, VSS = 0 V)
Parameter
Detection voltage
Minimum pulse width
Note
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
VPOR
When power supply rises
1.47
1.51
1.55
V
VPDR
When power supply falls
1.46
1.50
1.54
V
TPW
μs
300
Note This is the time required for the POR circuit to execute a reset operation when VDD falls below VPDR. When the
microcontroller enters STOP mode and when the main system clock (fMAIN) has been stopped by setting bit 0
(HIOSTOP) and bit 7 (MSTOP) of the clock operation status control register (CSC), this is the time required for
the POR circuit to execute a reset operation between when VDD falls below 0.7 V and when VDD rises to VPOR or
higher.
TPW
Supply voltage (VDD)
VPOR
VPDR or 0.7 V
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 62 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.6.5 LVD circuit characteristics
LVD Detection Voltage of Reset Mode and Interrupt Mode
(TA = −40 to +85°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Detection
Supply voltage level
Symbol
VLVD0
voltage
VLVD1
VLVD2
VLVD3
VLVD4
VLVD5
VLVD6
VLVD7
VLVD8
VLVD9
VLVD10
VLVD11
VLVD12
VLVD13
Minimum pulse width
Detection delay time
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
tLW
Conditions
MIN.
TYP.
MAX.
Unit
When power supply rises
3.98
4.06
4.14
V
When power supply falls
3.90
3.98
4.06
V
When power supply rises
3.68
3.75
3.82
V
When power supply falls
3.60
3.67
3.74
V
When power supply rises
3.07
3.13
3.19
V
When power supply falls
3.00
3.06
3.12
V
When power supply rises
2.96
3.02
3.08
V
When power supply falls
2.90
2.96
3.02
V
When power supply rises
2.86
2.92
2.97
V
When power supply falls
2.80
2.86
2.91
V
When power supply rises
2.76
2.81
2.87
V
When power supply falls
2.70
2.75
2.81
V
When power supply rises
2.66
2.71
2.76
V
When power supply falls
2.60
2.65
2.70
V
When power supply rises
2.56
2.61
2.66
V
When power supply falls
2.50
2.55
2.60
V
When power supply rises
2.45
2.50
2.55
V
When power supply falls
2.40
2.45
2.50
V
When power supply rises
2.05
2.09
2.13
V
When power supply falls
2.00
2.04
2.08
V
When power supply rises
1.94
1.98
2.02
V
When power supply falls
1.90
1.94
1.98
V
When power supply rises
1.84
1.88
1.91
V
When power supply falls
1.80
1.84
1.87
V
When power supply rises
1.74
1.77
1.81
V
When power supply falls
1.70
1.73
1.77
V
When power supply rises
1.64
1.67
1.70
V
When power supply falls
1.60
1.63
1.66
V
μs
300
300
μs
Page 63 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
LVD Detection Voltage of Interrupt & Reset Mode
(TA = −40 to +85°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Interrupt and reset
VLVD13
mode
VLVD12
VLVD11
VLVD4
VLVD11
VLVD10
VLVD9
VLVD2
VLVD8
VLVD7
VLVD6
VLVD1
VLVD5
VLVD4
VLVD3
VLVD0
Conditions
VPOC2, VPOC1, VPOC0 = 0, 0, 0, falling reset voltage
LVIS1, LVIS0 = 1, 0
LVIS1, LVIS0 = 0, 1
LVIS1, LVIS0 = 0, 0
Rising release reset voltage
LVIS1, LVIS0 = 0, 1
LVIS1, LVIS0 = 0, 0
LVIS1, LVIS0 = 0, 1
LVIS1, LVIS0 = 0, 0
LVIS1, LVIS0 = 0, 1
LVIS1, LVIS0 = 0, 0
Unit
1.60
1.63
1.66
V
1.74
1.77
1.81
V
1.70
1.73
1.77
Rising release reset voltage
1.84
1.88
1.91
V
Falling interrupt voltage
1.80
1.84
1.87
V
Rising release reset voltage
2.86
2.92
2.97
V
Falling interrupt voltage
2.80
2.86
2.91
V
1.80
1.84
1.87
V
Rising release reset voltage
1.94
1.98
2.02
V
Falling interrupt voltage
1.90
1.94
1.98
V
Rising release reset voltage
2.05
2.09
2.13
V
Falling interrupt voltage
2.00
2.04
2.08
V
Rising release reset voltage
3.07
3.13
3.19
V
Falling interrupt voltage
3.00
3.06
3.12
V
2.40
2.45
2.50
V
Rising release reset voltage
2.56
2.61
2.66
V
Falling interrupt voltage
2.50
2.55
2.60
V
Rising release reset voltage
2.66
2.71
2.76
V
Falling interrupt voltage
2.60
2.65
2.70
V
Rising release reset voltage
3.68
3.75
3.82
V
Falling interrupt voltage
3.60
3.67
3.74
V
2.70
2.75
2.81
V
Rising release reset voltage
2.86
2.92
2.97
V
Falling interrupt voltage
2.80
2.86
2.91
V
Rising release reset voltage
2.96
3.02
3.08
V
Falling interrupt voltage
2.90
2.96
3.02
V
VPOC2, VPOC1, VPOC0 = 0, 1, 1, falling reset voltage
LVIS1, LVIS0 = 1, 0
MAX.
Falling interrupt voltage
VPOC2, VPOC1, VPOC0 = 0, 1, 0, falling reset voltage
LVIS1, LVIS0 = 1, 0
TYP.
V
VPOC2, VPOC1, VPOC0 = 0, 0, 1, falling reset voltage
LVIS1, LVIS0 = 1, 0
MIN.
Rising release reset voltage
3.98
4.06
4.14
V
Falling interrupt voltage
3.90
3.98
4.06
V
MIN.
TYP.
MAX.
Unit
54
V/ms
2.6.6 Supply voltage rising slope characteristics
(TA = −40 to +85°C, VSS = 0 V)
Parameter
VDD rising slope
Symbol
Conditions
SVDD
Caution Make sure to keep the internal reset state by the LVD circuit or an external reset until VDD reaches the
operating voltage range shown in 2.4 AC Characteristics.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 64 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.7 LCD Characteristics
2.7.1 External resistance division method
(1) Static display mode
(TA = −40 to +85°C, VL4 (MIN.) ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
LCD drive voltage
Symbol
Conditions
VL4
MIN.
TYP.
2.0
MAX.
Unit
VDD
V
MAX.
Unit
VDD
V
MAX.
Unit
VDD
V
(2) 1/2 bias method, 1/4 bias method
(TA = −40 to +85°C, VL4 (MIN.) ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
LCD drive voltage
Symbol
Conditions
VL4
MIN.
TYP.
2.7
(3) 1/3 bias method
(TA = −40 to +85°C, VL4 (MIN.) ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
LCD drive voltage
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Symbol
VL4
Conditions
MIN.
2.5
TYP.
Page 65 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.7.2 Internal voltage boosting method
(1) 1/3 bias method
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
LCD output voltage variation range
VL1
Conditions
MIN.
TYP.
MAX.
Unit
C1 to C4Note 1
VLCD = 04H
0.90
1.00
1.08
V
= 0.47 μFNote 2
VLCD = 05H
0.95
1.05
1.13
V
VLCD = 06H
1.00
1.10
1.18
V
VLCD = 07H
1.05
1.15
1.23
V
VLCD = 08H
1.10
1.20
1.28
V
VLCD = 09H
1.15
1.25
1.33
V
VLCD = 0AH
1.20
1.30
1.38
V
VLCD = 0BH
1.25
1.35
1.43
V
VLCD = 0CH
1.30
1.40
1.48
V
VLCD = 0DH
1.35
1.45
1.53
V
VLCD = 0EH
1.40
1.50
1.58
V
VLCD = 0FH
1.45
1.55
1.63
V
VLCD = 10H
1.50
1.60
1.68
V
VLCD = 11H
1.55
1.65
1.73
V
VLCD = 12H
1.60
1.70
1.78
V
VLCD = 13H
1.65
1.75
1.83
V
Doubler output voltage
VL2
C1 to C4Note 1 = 0.47 μF
2 VL1 − 0.10
2 VL1
2 VL1
V
Tripler output voltage
VL4
C1 to C4Note 1 = 0.47 μF
3 VL1 − 0.15
3 VL1
3 VL1
V
Reference voltage setup time
Voltage boost wait time
Note 2
Note 3
tVWAIT1
tVWAIT2
C1 to C4
Note 1
= 0.47 μF
5
ms
500
ms
Notes 1. This is a capacitor that is connected between voltage pins used to drive the LCD.
C1: A capacitor connected between CAPH and CAPL
C2: A capacitor connected between VL1 and GND
C3: A capacitor connected between VL2 and GND
C4: A capacitor connected between VL4 and GND
C1 = C2 = C3 = C4 = 0.47 μF ± 30 %
2. This is the time required to wait from when the reference voltage is specified by using the VLCD register (or
when the internal voltage boosting method is selected (by setting the MDSET1 and MDSET0 bits of the
LCDM0 register to 01B) if the default value reference voltage is used) until voltage boosting starts (VLCON =
1).
3. This is the wait time from when voltage boosting is started (VLCON = 1) until display is enabled (LCDON = 1).
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
(2) 1/4 bias method
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
LCD output voltage variation range
VL1
Conditions
MIN.
TYP.
MAX.
Unit
C1 to C5
VLCD = 04H
0.90
1.00
1.08
V
= 0.47 μFNote 2
VLCD = 05H
0.95
1.05
1.13
V
VLCD = 06H
1.00
1.10
1.18
V
VLCD = 07H
1.05
1.15
1.23
V
VLCD = 08H
1.10
1.20
1.28
V
VLCD = 09H
1.15
1.25
1.33
V
VLCD = 0AH
1.20
1.30
1.38
V
Note 1
Doubler output voltage
VL2
C1 to C5Note 1 = 0.47 μF
2 VL1−0.08
2 VL1
2 VL1
V
Tripler output voltage
VL3
C1 to C5
= 0.47 μF
3 VL1−0.12
3 VL1
3 VL1
V
Quadruply output voltage
VL4
C1 to C5
= 0.47 μF
4 VL1−0.16
4 VL1
4 VL1
V
Reference voltage setup time
Voltage boost wait time
Note 2
Note 3
Note 1
Note 1
tVWAIT1
tVWAIT2
C1 to C5
Note 1
= 0.47 μF
5
ms
500
ms
Notes 1. This is a capacitor that is connected between voltage pins used to drive the LCD.
C1: A capacitor connected between CAPH and CAPL
C2: A capacitor connected between VL1 and GND
C3: A capacitor connected between VL2 and GND
C4: A capacitor connected between VL3 and GND
C5: A capacitor connected between VL4 and GND
C1 = C2 = C3 = C4 = C5 = 0.47 μF ± 30%
2. This is the time required to wait from when the reference voltage is specified by using the VLCD register (or
when the internal voltage boosting method is selected (by setting the MDSET1 and MDSET0 bits of the
LCDM0 register to 01B) if the default value reference voltage is used) until voltage boosting starts (VLCON =
1).
3. This is the wait time from when voltage boosting is started (VLCON = 1) until display is enabled (LCDON = 1).
2.7.3 Capacitor split method
(1) 1/3 bias method
(TA = −40 to +85°C, 2.2 V ≤ VD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
VL4 voltage
VL4
C1 to C4 = 0.47 μF
VL2 voltage
VL2
C1 to C4 = 0.47 μF
MIN.
Note 2
TYP.
2/3 VL4 −
2/3 VL4
0.1
VL1 voltage
VL1
C1 to C4 = 0.47 μFNote 2
1/3 VL4 −
0.1
Capacitor split wait timeNote 1
Notes 1.
2.
tVWAIT
MAX.
VDD
Note 2
100
Unit
V
2/3 VL4 +
V
0.1
1/3 VL4
1/3 VL4 +
V
0.1
ms
This is the wait time from when voltage bucking is started (VLCON = 1) until display is enabled (LCDON = 1).
This is a capacitor that is connected between voltage pins used to drive the LCD.
C1: A capacitor connected between CAPH and CAPL
C2: A capacitor connected between VL1 and GND
C3: A capacitor connected between VL2 and GND
C4: A capacitor connected between VL4 and GND
C1 = C2 = C3 = C4 = 0.47 μF ± 30%
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2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.8 RAM Data Retention Characteristics
(TA = −40 to +85°C)
Parameter
Symbol
Data retention supply voltage
Conditions
VDDDR
MIN.
TYP.
1.46Note
MAX.
Unit
5.5
V
Note This depends on the POR detection voltage. For a falling voltage, data in RAM are retained until the voltage
reaches the level that triggers a POR reset but not once it reaches the level at which a POR reset is generated.
Caution
Data in RAM are not retained if the CPU operates outside the specified operating voltage range.
Therefore, place the CPU in STOP mode before the operating voltage drops below the specified range.
Operation mode
STOP mode
RAM data retention mode
VDD
VDDDR
STOP instruction execution
Standby release signal
(interrupt request)
2.9 Flash Memory Programming Characteristics
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
System clock frequency
Number of code flash rewrites
Notes 1, 2, 3
Conditions
fCLK
1.8 V ≤ VDD ≤ 5.5 V
Cerwr
Retained for 20 years
MIN.
TYP.
1
MAX.
Unit
24
MHz
1,000
Times
TA = 85°C
Retained for 1 year
Number of data flash rewritesNotes 1, 2, 3
1,000,000
TA = 25°C
Retained for 5 years
100,000
TA = 85°C
Retained for 20 years
10,000
TA = 85°C
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. This characteristic indicates the flash memory characteristic and based on Renesas Electronics reliability test.
Remark
When updating data multiple times, use the flash memory as one for updating data.
2.10 Dedicated Flash Memory Programmer Communication (UART)
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Transfer rate
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Symbol
Conditions
During serial programming
MIN.
115,200
TYP.
MAX.
Unit
1,000,000
bps
Page 68 of 123
2. ELECTRICAL SPECIFICATIONS (TA = −40 to +85°C)
RL78/L13
2.11 Timing Specifications for Switching Flash Memory Programming Modes
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Time to complete the
tSUINIT
Conditions
MIN.
TYP.
POR and LVD reset must be released before
MAX.
Unit
100
ms
the external reset is released.
communication for the initial setting
after the external reset is released
Time to release the external reset
tSU
POR and LVD reset must be released before
10
μs
1
ms
the external reset is released.
after the TOOL0 pin is set to the
low level
Time to hold the TOOL0 pin at the
tHD
POR and LVD reset must be released before
the external reset is released.
low level after the external reset is
released
(excluding the processing time of
the firmware to control the flash
memory)
RESET
723 s + tHD
00H reception
processing
(TOOLRxD, TOOLTxD mode)
time
TOOL0
tSU
tSUINIT
The low level is input to the TOOL0 pin.
The external reset is released (POR and LVD reset must be released before the external
reset is released.).
The TOOL0 pin is set to the high level.
Setting of the flash memory programming mode by UART reception and completion the
baud rate setting.
Remark tSUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is released
during this period.
tSU:
Time to release the external reset after the TOOL0 pin is set to the low level
tHD:
Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing
time of the firmware to control the flash memory)
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RL78/L13
3.
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to
+105°C)
This chapter describes the following electrical specifications.
Target products G: Industrial applications TA = −40 to +105°C
R5F10WLAGFB, R5F10WLCGFB, R5F10WLDGFB,
R5F10WLEGFB, R5F10WLFGFB, R5F10WLGGFB
R5F10WMAGFB, R5F10WMCGFB, R5F10WMDGFB,
R5F10WMEGFB, R5F10WMFGFB, R5F10WMGGFB
Cautions 1. The RL78/L13 microcontrollers have an on-chip debug function, which is provided for
development and evaluation. Do not use the on-chip debug function in products designated for
mass production, because the guaranteed number of rewritable times of the flash memory may
be exceeded when this function is used, and product reliability therefore cannot be guaranteed.
Renesas Electronics is not liable for problems occurring when the on-chip debug function is
used.
2. The pins mounted depend on the product. See 2.1 Port Function to 2.2.1 With functions for
each product in the RL78/L13 User’s Manual.
3. Consult Renesas salesperson and distributor for derating when the product is used at TA = +85°C
to +105°C. Note that derating means “systematically lowering the load from the rated value to
improve reliability”.
Remark
When RL78/L13 is used in the range of TA = -40 to +85°C, see CHAPTER 2 ELECTRICAL
SPECIFICATIONS (TA = -40 to +85°C).
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
“G: Industrial applications (TA = −40 to +105°C) differ from “A: Consumer applications” in function as follows:
Fields of Application
A: Consumer applications
G: Industrial applications
TA = −40 to +85°C
TA = −40 to +105°C
Operation mode
HS (high-speed main) mode:
HS (high-speed main) mode only:
operating voltage
2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz
2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz
range
2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz
2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz
Operating ambient
temperature
LS (low-speed main) mode:
1.8 V ≤ VDD ≤ 5.5 V@1 MHz to 8 MHz
LV (low-voltage main) mode:
1.6 V ≤ VDD ≤ 5.5 V@1 MHz to 4 MHz
High-speed on-chip
1.8 V ≤ VDD ≤ 5.5 V:
oscillator clock
±1.0 % @ TA = −20 to +85°C
2.4 V ≤ VDD ≤ 5.5 V:
±2.0 % @ TA = +85 to +105°C
accuracy
±1.5 % @ TA = −40 to −20°C
±1.0 % @ TA = −20 to +85°C
1.6 V ≤ VDD < 1.8 V:
±1.5 % @ TA = −40 to −20°C
±5.0 % @ TA = −20 to +85°C
±5.5 % @ TA = −40 to −20°C
Serial array unit
IICA
UART
UART
CSI: fCLK/2 (16 Mbps supported), fCLK/4
CSI: fCLK/4
Simplified I2C
Simplified I2C
Standard mode
Standard mode
Fast mode
Fase mode
Fast mode plus
Voltage detector
Remark
• Rising: 1.67 V to 4.06 V (14 levels)
• Rising: 2.61 V to 4.06 V (8 levels)
• Falling: 1.63 V to 3.98 V (14 levels)
• Falling: 2.55 V to 3.98 V (8 levels)
Electrical specifications of G: Industrial applications (TA = −40 to +105°C) differ from “A: Consumer
applications”. For details, see 3.1 to 3.11 below.
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.1 Absolute Maximum Ratings
Absolute Maximum Ratings (1/3)
Parameter
Symbol
Supply voltage
VDD
REGC pin input voltage
VIREGC
Conditions
REGC
Ratings
Unit
−0.5 to +6.5
V
−0.3 to +2.8
V
and −0.3 to VDD +0.3Note 1
Input voltage
VI1
P00 to P07, P10 to P17, P20 to P27, P30 to P35,
−0.3 to VDD +0.3Note 2
V
−0.3 to +6.5
V
V
P40 to P47, P50 to P57, P60, P61, P70 to P77,
P121 to P127, P130, P137
Output voltage
VI2
P60 and P61 (N-ch open-drain)
VI3
EXCLK, EXCLKS, RESET
−0.3 to VDD +0.3
VO1
P00 to P07, P10 to P17, P20 to P27, P30 to P35,
−0.3 to VDD +0.3
Note 2
Note 2
V
P40 to P47, P50 to P57, P60, P61, P70 to P77,
P121 to P127, P130, P137
Analog input voltage
VAI1
ANI0, ANI1, ANI16 to ANI26
−0.3 to VDD +0.3
V
and −0.3 to AVREF(+) +0.3Notes 2, 3
Notes 1. Connect the REGC pin to Vss via a capacitor (0.47 to 1 μ F).
This value regulates the absolute
maximum rating of the REGC pin. Do not use this pin with voltage applied to it.
2.
Must be 6.5 V or lower.
3.
Do not exceed AV REF(+) + 0.3 V in case of A/D conversion target pin.
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge
of suffering physical damage, and therefore the product must be used under conditions that ensure that
the absolute maximum ratings are not exceeded.
Remarks 1.
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
2.
AVREF (+): + side reference voltage of the A/D converter.
3.
VSS: Reference voltage
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
Absolute Maximum Ratings (2/3)
Parameter
LCD voltage
Symbol
VL1
Conditions
VL1 voltage
Note 1
Ratings
Unit
−0.3 to +2.8 and
V
−0.3 to VL4 +0.3
VL2
VL2 voltageNote 1
−0.3 to VL4 +0.3Note 2
V
VL3
VL3 voltageNote 1
−0.3 to VL4 +0.3Note 2
V
VL4
VL4 voltageNote 1
−0.3 to +6.5
V
VLCAP
CAPL, CAPH voltage
−0.3 to VL4 +0.3
V
VOUT
COM0 to COM7
External resistance division method
SEG0 to SEG50
output voltage
Note 1
Note 2
−0.3 to VDD +0.3
Note 2
V
Capacitor split method
−0.3 to VDD +0.3
Note 2
V
Internal voltage boosting method
−0.3 to VL4 +0.3
Note 2
V
Notes 1. This value only indicates the absolute maximum ratings when applying voltage to the VL1, VL2, VL3, and VL4 pins;
it does not mean that applying voltage to these pins is recommended. When using the internal voltage boosting
method or capacitance split method, connect these pins to VSS via a capacitor (0.47 μF ± 30%) and connect a
capacitor (0.47 μF ± 30%) between the CAPL and CAPH pins.
2.
Must be 6.5 V or lower.
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge
of suffering physical damage, and therefore the product must be used under conditions that ensure that
the absolute maximum ratings are not exceeded.
Remark VSS: Reference voltage
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RL78/L13
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
Absolute Maximum Ratings (TA = 25°C) (3/3)
Parameter
Output current, high
Symbol
IOH1
Conditions
Per pin
P00 to P07, P10 to P17, P22 to P27,
Ratings
Unit
−40
mA
−170
mA
−0.5
mA
P30 to P35, P40 to P47,
P50 to P57, P60, P61,
P70 to P77, P125 to P127, P130
Total of all pins
P00 to P07, P10 to P17, P22 to P27,
−170 mA
P30 to P35, P40 to P47,
P50 to P57, P60, P61,
P70 to P77, P125 to P127, P130
IOH2
Per pin
P20, P21
Total of all pins
Output current, low
IOL1
Per pin
P00 to P07, P10 to P17, P22 to P27,
−1
mA
40
mA
P30 to P35, P40 to P47,
P50 to P57, P60, P61,
P70 to P77, P125 to P127, P130
Total of all pins
P40 to P47, P130
70
mA
170 mA
P00 to P07, P10 to P17, P22 to P27,
100
mA
1
mA
2
mA
−40 to +105
°C
P30 to P35, P50 to P57, P60, P61,
P70 to P77, P125 to P127
IOL2
Per pin
P20, P21
Total of all pins
Operating ambient
TA
temperature
Storage temperature
In normal operation mode
°C
In flash memory programming mode
Tstg
−65 to +150
°C
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge
of suffering physical damage, and therefore the product must be used under conditions that ensure that
the absolute maximum ratings are not exceeded.
Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins.
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.2 Oscillator Characteristics
3.2.1 X1 and XT1 oscillator characteristics
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Resonator
Conditions
MIN.
TYP.
MAX.
Unit
MHz
X1 clock oscillation
Ceramic resonator/
2.7 V ≤ VDD ≤ 5.5 V
1.0
20.0
frequency (fX)Note
crystal resonator
2.4 V ≤ VDD < 2.7 V
1.0
16.0
XT1 clock oscillation
Crystal resonator
32
32.768
35
kHz
frequency (fXT)Note
Note Indicates only permissible oscillator frequency ranges. Refer to AC Characteristics for instruction execution time.
Request evaluation by the manufacturer of the oscillator circuit mounted on a board to check the oscillator
characteristics.
Caution Since the CPU is started by the high-speed on-chip oscillator clock after a reset release, check the X1
clock oscillation stabilization time using the oscillation stabilization time counter status register (OSTC)
by the user.
Determine the oscillation stabilization time of the OSTC register and the oscillation
stabilization time select register (OSTS) after sufficiently evaluating the oscillation stabilization time
with the resonator to be used.
Remark
When using the X1 oscillator and XT1 oscillator, see 5.4 System Clock Oscillator in the RL78/L13 User’s
Manual.
3.2.2 On-chip oscillator characteristics
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
High-speed on-chip oscillator
Symbol
Conditions
fIH
MIN.
TYP.
MAX.
Unit
1
24
MHz
clock frequencyNotes 1, 2
High-speed on-chip oscillator
+85 to +105°C
2.4 V ≤ VDD ≤ 5.5 V
−2
+2
%
clock frequency accuracy
−20 to +85°C
2.4 V ≤ VDD ≤ 5.5 V
−1
+1
%
−40 to −20°C
2.4 V ≤ VDD ≤ 5.5 V
−1.5
Low-speed on-chip oscillator
fIL
+1.5
15
%
kHz
clock frequency
Low-speed on-chip oscillator
−15
+15
%
clock frequency accuracy
Notes 1. The high-speed on-chip oscillator frequency is selected by bits 0 to 4 of the option byte (000C2H/010C2H)
and bits 0 to 2 of the HOCODIV register.
2. This indicates the oscillator characteristics only. Refer to AC Characteristics for the instruction execution
time.
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.3 DC Characteristics
3.3.1 Pin characteristics
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
IOH1
Output current,
highNote 1
IOH2
Notes 1.
Conditions
MIN.
TYP.
MAX.
−3.0
Unit
Per pin for P00 to P07, P10 to P17,
P22 to P27, P30 to P35, P40 to P47, P50
to P57, P70 to P77, P125 to P127, P130
2.4 V ≤ VDD ≤ 5.5 V
Total of P00 to P07, P10 to P17,
4.0 V ≤ VDD ≤ 5.5 V
−45.0
mA
P22 to P27, P30 to P35, P40 to P47, P50
to P57, P70 to P77, P125 to P127, P130
(When duty = 70%Note 3)
2.7 V ≤ VDD < 4.0 V
−15.0
mA
2.4 V ≤ VDD < 2.7 V
−7.0
mA
Per pin for P20 and P21
2.4 V ≤ VDD ≤ 5.5 V
−0.1Note 2
mA
Total of all pins
(When duty = 70%Note 3)
2.4 V ≤ VDD ≤ 5.5 V
−0.2
mA
Note 2
mA
Value of the current at which the device operation is guaranteed even if the current flows from the VDD pin
to an output pin
2.
3.
Do not exceed the total current value.
Output current value under conditions where the duty factor ≤ 70%.
The output current value that has changed to the duty factor > 70% the duty ratio can be calculated with the
following expression (when changing the duty factor from 70% to n%).
• Total output current of pins = (IOH × 0.7)/(n × 0.01)
Where n = 80% and IOH = −45.0 mA
Total output current of pins = (−45.0 × 0.7)/(80 × 0.01) = −39.375 mA
However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A
current higher than the absolute maximum rating must not flow into one pin.
Caution P00, P04 to P07, P16, P17, P35, P42 to P44, P46, P47, P53 to P56, and P130 do not output high level in
N-ch open-drain mode.
Remark
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Output current,
lowNote 1
IOL1
MAX.
Unit
Per pin for P00 to P07, P10 to P17,
P22 to P27, P30 to P35, P40 to P47,
P50 to P57, P70 to P77,
P125 to P127, P130
Conditions
8.5Note 2
mA
Per pin for P60 and P61
15.0Note 2
mA
40.0
mA
2.7 V ≤ VDD < 4.0 V
15.0
mA
2.4 V ≤ VDD < 2.7 V
9.0
mA
4.0 V ≤ VDD ≤ 5.5 V
60.0
mA
2.7 V ≤ VDD < 4.0 V
35.0
mA
2.4 V ≤ VDD < 2.7 V
20.0
mA
Total of all pins
(When duty = 70%Note 3)
100.0
mA
Per pin for P20 and P21
0.4Note 2
mA
0.8
mA
Total of P00 to P07, P10 to P17,
P22 to P27, P30 to P35, P50 to P57,
P70 to P77, P125 to P127
(When duty = 70%Note 3)
Total of all pins
(When duty = 70%Note 3)
Notes 1.
TYP.
4.0 V ≤ VDD ≤ 5.5 V
Total of P40 to P47, P130
(When duty = 70%Note 3)
IOL2
MIN.
2.4 V ≤ VDD ≤ 5.5 V
Value of the current at which the device operation is guaranteed even if the current flows from an output pin
to the VSS pin
2.
Do not exceed the total current value.
3.
Output current value under conditions where the duty factor ≤ 70%.
The output current value that has changed to the duty factor > 70% the duty ratio can be calculated with the
following expression (when changing the duty factor from 70% to n%).
• Total output current of pins = (IOL × 0.7)/(n × 0.01)
Where n = 80% and IOL = 40.0 mA
Total output current of pins = (40.0 × 0.7)/(80 × 0.01) = 35.0 mA
However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A
current higher than the absolute maximum rating must not flow into one pin.
Remark
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 77 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Input voltage,
Symbol
VIH1
Conditions
P00 to P07, P10 to P17, P22 to P27,
MIN.
Normal input buffer
TYP.
MAX.
Unit
0.8VDD
VDD
V
2.2
VDD
V
2.0
VDD
V
1.5
VDD
V
P30 to P35, P40 to P47, P50 to P57,
high
P70 to P77, P125 to P127, P130,
P137
VIH2
P03, P05, P06, P16, P17, P34, P43,
TTL input buffer
P44, P46, P47, P53, P55
4.0 V ≤ VDD ≤ 5.5 V
TTL input buffer
3.3 V ≤ VDD < 4.0 V
TTL input buffer
2.4 V ≤ VDD < 3.3 V
VIH3
P20, P21
0.7VDD
VDD
V
VIH4
P60, P61
0.7VDD
6.0
V
VIH5
P121 to P124, P137, EXCLK, EXCLKS, RESET
0.8VDD
VDD
V
Normal input buffer
0
0.2VDD
V
P03, P05, P06, P16, P17, P34, P43,
TTL input buffer
0
0.8
V
P44, P46, P47, P53, P55
4.0 V ≤ VDD ≤ 5.5 V
0
0.5
V
0
0.32
V
Input voltage, low VIL1
P00 to P07, P10 to P17, P22 to P27,
P30 to P35, P40 to P47, P50 to P57,
P70 to P77, P125 to P127, P130,
P137
VIL2
TTL input buffer
3.3 V ≤ VDD < 4.0 V
TTL input buffer
2.4 V ≤ VDD < 3.3 V
VIL3
P20, P21
0
0.3VDD
V
VIL4
P60, P61
0
0.3VDD
V
VIL5
P121 to P124, P137, EXCLK, EXCLKS, RESET
0
0.2VDD
V
Caution The maximum value of VIH of pins P00, P04 to P07, P16, P17, P35, P42 to P44, P46, P47, P53 to P56,
and P130 is VDD, even in the N-ch open-drain mode.
Remark
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 78 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Output voltage,
VOH1
high
Conditions
MIN.
P00 to P07, P10 to P17, P22 to P27,
4.0 V ≤ VDD ≤ 5.5 V,
P30 to P35, P40 to P47, P50 to P57,
IOH1 = −3.0 mA
P70 to P77, P125 to P127, P130
2.7 V ≤ VDD ≤ 5.5 V,
TYP.
MAX.
Unit
VDD − 0.7
V
VDD − 0.6
V
VDD − 0.5
V
VDD − 0.5
V
IOH1 = −2.0 mA
2.4 V ≤ VDD ≤ 5.5 V,
IOH1 = −1.5 mA
VOH2
P20 and P21
2.4 V ≤ VDD ≤ 5.5 V,
IOH2 = −100 μ A
Output voltage,
VOL1
low
P00 to P07, P10 to P17, P22 to P27,
4.0 V ≤ VDD ≤ 5.5 V,
P30 to P35, P40 to P47, P50 to P57,
IOL1 = 8.5 mA
P70 to P77, P125 to P127, P130
2.7 V ≤ VDD ≤ 5.5 V,
0.7
V
0.6
V
0.4
V
0.4
V
0.4
V
2.0
V
0.4
V
0.4
V
0.4
V
IOL1 = 3.0 mA
2.7 V ≤ VDD ≤ 5.5 V,
IOL1 = 1.5 mA
2.4 V ≤ VDD ≤ 5.5 V,
IOL1 = 0.6 mA
VOL2
P20 and P21
2.4 V ≤ VDD ≤ 5.5 V,
IOL2 = 400 μA
VOL3
P60 and P61
4.0 V ≤ VDD ≤ 5.5 V,
IOL3 = 15.0 mA
4.0 V ≤ VDD ≤ 5.5 V,
IOL3 = 5.0 mA
2.7 V ≤ VDD ≤ 5.5 V,
IOL3 = 3.0 mA
2.4 V ≤ VDD ≤ 5.5 V,
IOL3 = 2.0 mA
Caution P00, P04 to P07, P16, P17, P35, P42 to P44, P46, P47, P53 to P56, and P130 do not output high level in
N-ch open-drain mode.
Remark
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 79 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Input leakage
ILIH1
Conditions
P00 to P07, P10 to P17,
MIN.
TYP.
MAX.
Unit
VI = VDD
1
μA
1
μA
1
μA
10
μA
VI = VSS
−1
μA
−1
μA
−1
μA
−10
μA
P22 to P27, P30 to P35,
current, high
P40 to P47, P50 to P57,
P70 to P77, P125 to P127, P130,
P137
ILIH2
P20 and P21, RESET
VI = VDD
ILIH3
P121 to P124
VI = VDD
In input port
(X1, X2, XT1, XT2, EXCLK,
mode and
EXCLKS)
when external
clock is input
Resonator
connected
Input leakage
ILIL1
P00 to P07, P10 to P17,
P22 to P27, P30 to P35,
current, low
P40 to P47, P50 to P57,
P70 to P77, P125 to P127, P130,
P137
ILIL2
P20 and P21, RESET
VI = VSS
ILIL3
P121 to P124
VI = VSS
In input port
(X1, X2, XT1, XT2, EXCLK,
mode and
EXCLKS)
when external
clock is input
Resonator
connected
On-chip pull-up
RU1
P00 to P07, P10 to P17,
VI = VSS
10
20
100
kΩ
VI = VSS
10
20
100
kΩ
P22 to P27, P30 to P35,
resistance
P45 to P47, P50 to P57,
P70 to P77, P125 to P127,
P130
RU2
Remark
P40 to P44
Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 80 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.3.2 Supply current characteristics
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Supply
I
current
Note 1
DD1
(1/2)
Conditions
Operating
HS (high-
fHOCO = 48 MHz
mode
speed main)
3
modeNote 5
fIH = 24 MHzNote 3
MIN.
Note
,
Basic
operation
Normal
operation
fHOCO = 24 MHz
Note
Basic
operation
,
3
fIH = 24 MHzNote 3
Normal
operation
fHOCO = 16 MHz
Note
Normal
operation
,
3
fIH = 16 MHzNote 3
TYP.
MAX.
Unit
VDD = 5.0 V
2.0
mA
VDD = 3.0 V
2.0
mA
VDD = 5.0 V
3.8
7.0
mA
VDD = 3.0 V
3.8
7.0
mA
VDD = 5.0 V
1.7
mA
VDD = 3.0 V
1.7
mA
VDD = 5.0 V
3.6
6.5
mA
VDD = 3.0 V
3.6
6.5
mA
VDD = 5.0 V
2.7
5.0
mA
VDD = 3.0 V
2.7
5.0
mA
HS (high-
fMX = 20 MHzNote 2,
Normal
Square wave input
3.0
5.4
mA
speed main)
VDD = 5.0 V
operation
Resonator connection
3.2
5.6
mA
Normal
5.4
mA
modeNote 5
fMX = 20 MHz
,
Square wave input
2.9
VDD = 3.0 V
operation
Resonator connection
3.2
5.6
mA
fMX = 10 MHzNote 2,
Normal
Square wave input
1.9
3.2
mA
VDD = 5.0 V
operation
Resonator connection
1.9
3.2
mA
fMX = 10 MHz
Note 2
Normal
Square wave input
1.9
3.2
mA
VDD = 3.0 V
,
operation
Resonator connection
1.9
3.2
mA
Subsystem
fSUB =
Normal
Square wave input
4.0
5.4
μA
clock
32.768 kHzNote 4,
operation
operation
TA = −40°C
Resonator connection
4.3
5.4
μA
fSUB =
Normal
Square wave input
4.0
5.4
μA
32.768 kHz Note 4,
operation
Resonator connection
4.3
5.4
μA
fSUB =
Normal
Square wave input
4.1
7.1
μA
32.768 kHzNote 4,
operation
Resonator connection
4.4
7.1
μA
fSUB =
Normal
Square wave input
4.3
8.7
μA
32.768 kHzNote 4,
operation
Resonator connection
4.7
8.7
μA
fSUB =
Normal
Square wave input
4.7
12.0
μA
32.768 kHzNote 4,
operation
Resonator connection
5.2
12.0
μA
fSUB =
Normal
Square wave input
6.4
35.0
μA
32.768 kHzNote 4,
operation
Resonator connection
6.6
35.0
μA
Note 2
TA = +25°C
TA = +50°C
TA = +70°C
TA = +85°C
TA = +105°C
(Notes and Remarks are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 81 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed
to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not
including the current flowing into the LCD controller/driver, A/D converter, LVD circuit, comparator, I/O port, onchip pull-up/pull-down resistors, and the current flowing during data flash rewrite.
2. When high-speed on-chip oscillator and subsystem clock are stopped.
3. When high-speed system clock and subsystem clock are stopped.
4. When high-speed on-chip oscillator and high-speed system clock are stopped. When setting ultra-low power
consumption oscillation (AMPHS1 = 1). The current flowing into the LCD controller/driver, 16-bit timer KB20,
real-time clock 2, 12-bit interval timer, and watchdog timer is not included.
5. Relationship between operation voltage width, operation frequency of CPU and operation mode is as below.
HS (high-speed main) mode: 2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz
2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz
Remarks 1. fMX:
High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. fHOCO: High-speed on-chip oscillator clock frequency (48 MHz max.)
3. fIH:
High-speed on-chip oscillator clock frequency (24 MHz max.)
4. fSUB:
Subsystem clock frequency (XT1 clock oscillation frequency)
5. Except subsystem clock operation, temperature condition of the TYP. value is TA = 25°C
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 82 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Supply
I
Note 2
DD2
Conditions
HALT
mode
current Note 1
(2/2)
HS (highspeed main)
modeNote 7
fHOCO = 48 MHz
MIN.
Note 4
,
fIH = 24 MHzNote 4
fHOCO = 24 MHz
Note 4
,
fIH = 24 MHzNote 4
fHOCO = 16 MHz
Note 4
,
fIH = 16 MHzNote 4
HS (highspeed main)
modeNote 7
fMX = 20 MHz
,
Note 3
VDD = 5.0 V
fMX = 20 MHz
,
Note 3
VDD = 3.0 V
fMX = 10 MHz
VDD = 5.0 V
0.71
2.55
mA
VDD = 3.0 V
0.71
2.55
mA
VDD = 5.0 V
0.49
1.95
mA
VDD = 3.0 V
0.49
1.95
mA
VDD = 5.0 V
0.43
1.50
mA
VDD = 3.0 V
0.43
1.50
mA
Square wave input
0.31
1.76
mA
Resonator connection
0.48
1.92
mA
Square wave input
0.29
1.76
mA
Resonator connection
0.48
1.92
mA
0.20
0.96
mA
Square wave input
Resonator connection
0.28
1.07
mA
fMX = 10 MHzNote 3,
Square wave input
0.19
0.96
mA
VDD = 3.0 V
Resonator connection
0.28
1.07
mA
Square wave input
0.34
0.62
μA
Resonator connection
0.51
0.80
μA
Square wave input
0.38
0.62
μA
Resonator connection
0.57
0.80
μA
fSUB = 32.768 kHz
clock
TA = −40°C
fSUB = 32.768 kHz
Note 5
Note 5
,
,
Square wave input
0.46
2.30
μA
TA = +50°C
Resonator connection
0.67
2.49
μA
fSUB = 32.768 kHzNote 5,
Square wave input
0.65
4.03
μA
TA = +70°C
Resonator connection
0.91
4.22
μA
Square wave input
1.00
8.04
μA
Resonator connection
1.31
8.23
μA
Square wave input
3.05
27.00
μA
Resonator connection
3.24
27.00
μA
fSUB = 32.768 kHz
fSUB = 32.768 kHz
Note 5
Note 5
,
,
TA = +85°C
fSUB = 32.768 kHz
TA = +105°C
I
Unit
,
TA = +25°C
Note 6
DD3
MAX.
VDD = 5.0 V
Note 3
Subsystem
operation
TYP.
Note 5
,
STOP
TA = −40°C
0.18
0.52
μA
modeNote 8
TA = +25°C
0.24
0.52
μA
TA = +50°C
0.33
2.21
μA
TA = +70°C
0.53
3.94
μA
TA = +85°C
0.93
7.95
μA
TA = +105°C
2.91
25.00
μA
(Notes and Remarks are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 83 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed
to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not
including the current flowing into the LCD controller/driver, A/D converter, LVD circuit, comparator, I/O port, onchip pull-up/pull-down resistors, and the current flowing during data flash rewrite.
2. During HALT instruction execution by flash memory.
3. When high-speed on-chip oscillator and subsystem clock are stopped.
4. When high-speed system clock and subsystem clock are stopped.
5. When high-speed on-chip oscillator and high-speed system clock are stopped.
When RTCLPC = 1 and setting ultra-low current consumption (AMPHS1 = 1). The current flowing into the realtime clock 2 is included. The current flowing into the clock output/buzzer output, 12-bit interval timer, and
watchdog timer is not included.
6. The current flowing into the real-time clock 2, clock output/buzzer output, 12-bit interval timer, and watchdog
timer is not included.
7. Relationship between operation voltage width, operation frequency of CPU and operation mode is as below.
HS (high-speed main) mode: 2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz
2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz
8. Regarding the value for current to operate the subsystem clock in STOP mode, refer to that in HALT mode.
Remarks 1. fMX:
High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. fHOCO: High-speed on-chip oscillator clock frequency (48 MHz max.)
3. fIH:
High-speed on-chip oscillator clock frequency (24 MHz max.)
4. fSUB:
Subsystem clock frequency (XT1 clock oscillation frequency)
5. Except subsystem clock operation and STOP mode, temperature condition of the TYP. value is TA = 25°C
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 84 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Low-speed on-
Symbol
I
Conditions
MIN.
Note 1
FIL
TYP.
MAX.
Unit
0.20
μA
0.02
μA
0.04
μA
0.22
μA
chip oscillator
operating current
RTC2 operating
IRTCNotes 1, 2, 3
fSUB = 32.768 kHz
current
12-bit interval
ITMKANotes 1, 2, 4
timer operating
current
Watchdog timer
IWDTNotes 1, 2, 5
fIL = 15 kHz
A/D converter
operating current
IADCNotes 1, 6
When conversion
at maximum speed
A/D converter
reference
voltage current
IADREFNote 1
75.0
μA
Temperature
sensor operating
current
ITMPSNote 1
75.0
μA
LVD operating
ILVDNotes 1, 7
0.08
μA
Window mode
12.5
μA
Comparator high-speed mode
6.5
μA
Comparator low-speed mode
1.7
μA
Window mode
8.0
μA
Comparator high-speed mode
4.0
μA
Comparator low-speed mode
1.3
μA
operating current
Normal mode, AVREFP = VDD = 5.0 V
Low voltage mode, AVREFP = VDD = 3.0 V
1.3
1.7
mA
0.5
0.7
mA
current
Comparator
operating current
ICMPNotes 1, 11
VDD = 5.0 V,
Regulator output
voltage = 2.1 V
VDD = 5.0 V,
Regulator output
voltage = 1.8 V
Selfprogramming
operating current
I
Notes 1, 9
FSP
2.00
12.20
mA
BGO operating
IBGONotes 1, 8
2.00
12.20
mA
While the mode is shiftingNote 10
0.50
0.60
mA
During A/D conversion, in low voltage
1.20
1.44
mA
0.70
0.84
mA
0.04
0.20.
μA
0.85
2.20
μA
1.55
3.70
μA
0.20
0.50
μA
current
SNOOZE
ISNOZNote 1
ADC operation
operating current
mode, AVREFP = VDD = 3.0 V
CSI/UART operation
LCD operating
I
External resistance
fLCD = fSUB
1/3 bias,
VDD = 5.0 V,
current
13
division method
LCD clock
= 128 Hz
four time
slices
VL4 = 5.0 V
ILCD2Note 1, 12
Internal voltage
fLCD = fSUB
1/3 bias,
VDD = 3.0 V,
boosting method
LCD clock
= 128 Hz
four time
slices
VL4 = 3.0 V
Notes 1, 12,
LCD1
(VLCD = 04H)
VDD = 5.0 V,
VL4 = 5.1 V
(VLCD = 12H)
I
Note 1, 12
LCD3
Capacitor split
fLCD = fSUB
1/3 bias,
VDD = 3.0 V,
method
LCD clock
= 128 Hz
four time
slices
VL4 = 3.0 V
(Notes and Remarks are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 85 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
Notes 1. Current flowing to VDD.
2. When high speed on-chip oscillator and high-speed system clock are stopped.
3. Current flowing only to the real-time clock 2 (excluding the operating current of the low-speed on-chip oscillator
and the XT1 oscillator). The value of the current for the RL78 microcontrollers is the sum of the values of either
IDD1 or IDD2, and IRTC, when the real-time clock 2 operates in operation mode or HALT mode. When the lowspeed on-chip oscillator is selected, IFIL should be added.
IDD2 subsystem clock operation includes the
operational current of real-time clock 2.
4. Current flowing only to the 12-bit interval timer (excluding the operating current of the low-speed on-chip
oscillator and the XT1 oscillator). The value of the current for the RL78 microcontrollers is the sum of the
values of either IDD1 or IDD2, and ITMKA, when the 12-bit interval timer operates in operation mode or HALT mode.
When the low-speed on-chip oscillator is selected, IFIL should be added.
5. Current flowing only to the watchdog timer (including the operating current of the low-speed on-chip oscillator).
The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3 and IWDT when the watchdog timer
operates.
6. Current flowing only to the A/D converter. The current value of the RL78 microcontrollers is the sum of IDD1 or
IDD2 and IADC when the A/D converter operates in an operation mode or the HALT mode.
7. Current flowing only to the LVD circuit. The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or
IDD3 and ILVD when the LVD circuit operates.
Current flowing only during data flash rewrite.
Current flowing only during self programming.
For shift time to the SNOOZE mode, see 21.3.3 SNOOZE mode in the RL78/L13 User’s Manual.
Current flowing only to the comparator circuit. The current value of the RL78 microcontrollers is the sum of
IDD1, IDD2 or IDD3 and ICMP when the comparator circuit operates.
12. Current flowing only to the LCD controller/driver. The value of the current for the RL78 microcontrollers is the
sum of the supply current (IDD1 or IDD2) and LCD operating current (ILCD1, ILCD2, or ILCD3), when the LCD
controller/driver operates in operation mode or HALT mode. However, not including the current flowing into
the LCD panel. Conditions of the TYP. value and MAX. value are as follows.
• Setting 20 pins as the segment function and blinking all
• Selecting fSUB for system clock when LCD clock = 128 Hz (LCDC0 = 07H)
• Setting four time slices and 1/3 bias
13. Not including the current flowing into the external division resistor when using the external resistance division
method.
8.
9.
10.
11.
Remarks 1. fIL:
Low-speed on-chip oscillator clock frequency
2. fSUB: Subsystem clock frequency (XT1 clock oscillation frequency)
3. fCLK: CPU/peripheral hardware clock frequency
4. The temperature condition for the TYP. value is TA = 25°C.
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
3.4 AC Characteristics
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Instruction cycle (minimum
Symbol
TCY
instruction execution time)
Conditions
MIN.
TYP.
MAX.
Unit
Main system
HS (high-speed
2.7 V ≤ VDD ≤ 5.5 V
0.0417
1
μs
clock (fMAIN)
main) mode
2.4 V ≤ VDD < 2.7 V
0.0625
1
μs
2.4 V ≤ VDD ≤ 5.5 V
28.5
31.3
μs
operation
Subsystem clock (fSUB)
30.5
operation
In the self
HS (high-speed
2.7 V ≤ VDD ≤ 5.5 V
0.0417
1
μs
programming
main) mode
2.4 V ≤ VDD < 2.7 V
0.0625
1
μs
2.7 V ≤ VDD ≤ 5.5 V
1.0
20.0
MHz
2.4 V ≤ VDD < 2.7 V
1.0
16.0
MHz
32
35
kHz
2.7 V ≤ VDD ≤ 5.5 V
24
ns
2.4 V ≤ VDD < 2.7 V
30
ns
13.7
μs
1/fMCK+
ns
mode
External system clock
fEX
frequency
fEXS
External system clock input
tEXH, tEXL
high-level width, low-level
width
TI00 to TI07 input high-level
tEXHS, tEXLS
tTIH, tTIL
width, low-level width
TO00 to TO07, TKBO00Note,
10
fTO
TKBO01-0 to TKBO01-2Note
HS (high-speed main)
4.0 V ≤ VDD ≤ 5.5 V
12
MHz
mode
2.7 V ≤ VDD < 4.0 V
8
MHz
2.4 V ≤ VDD < 2.7 V
4
MHz
HS (high-speed main)
4.0 V ≤ VDD ≤ 5.5 V
16
MHz
mode
2.7 V ≤ VDD < 4.0 V
8
MHz
2.4 V ≤ VDD < 2.7 V
4
MHz
output frequency
PCLBUZ0, PCLBUZ1 output
fPCL
frequency
Interrupt input high-level
tINTH, tINTL
INTP0 to INTP7
2.4 V ≤ VDD ≤ 5.5 V
1
μs
tKRH, tKRL
KR0 to KR7
2.4 V ≤ VDD ≤ 5.5 V
250
ns
tIHR
INTP0 to INTP7
2
fCLK
tIHR
INTP0 to INTP2
2
fCLK
10
μs
width, low-level width
Key interrupt input high-level
width, low-level width
IH-PWM output restart input
high-level width
TMKB2 forced output stop
input high-level width
RESET low-level width
tRSL
(Note and Remark are listed on the next page.)
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RL78/L13
Note Specification under conditions where the duty factor is 50%.
Remark fMCK: Timer array unit operation clock frequency
(Operation clock to be set by the CKSmn0, CKSmn1 bits of timer mode register mn (TMRmn)
m: Unit number (m = 0), n: Channel number (n = 0 to 7))
Minimum Instruction Execution Time during Main System Clock Operation
TCY vs VDD (HS (high-speed main) mode)
10
1.0
Cycle time TCY [s]
When the high-speed on-chip oscillator clock is selected
During self programming
When high-speed system clock is selected
0.1
0.0625
0.05
0.0417
0.01
0
1.0
2.0
3.0
2.4 2.7
4.0
5.0 5.5 6.0
Supply voltage VDD [V]
AC Timing Test Points
VIH/VOH
Test points
VIL/VOL
VIH/VOH
VIL/VOL
External System Clock Timing
1/fEX/
1/fEXS
tEXL/
tEXLS
tEXH/
tEXHS
EXCLK/EXCLKS
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
TI/TO Timing
tTIH
tTIL
TI00 to TI07
1/fTO
TO00 to TO07, TKBO00,
TKBO01-0, TKBO01-1,
TKBO01-2
Interrupt Request Input Timing
tINTH
tINTL
INTP0 to INTP7
Key Interrupt Input Timing
tKR
KR0 to KR7
RESET Input Timing
tRSL
RESET
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.5 Peripheral Functions Characteristics
AC Timing Test Points
VIH/VOH
VIH/VOH
Test points
VIL/VOL
VIL/VOL
3.5.1 Serial array unit
(1) During communication at same potential (UART mode)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
Transfer rate
Note
Theoretical value of the maximum transfer rate
Unit
MAX.
fMCK/12
bps
2.0
Mbps
fCLK = 24 MHz, fMCK = fCLK
Note Transfer rate in the SNOOZE mode is 4800 bps only.
Caution Select the normal input buffer for the RxDq pin and the normal output mode for the TxDq pin by
using port input mode register g (PIMg) and port output mode register g (POMg).
UART mode connection diagram (during communication at same potential)
Rx
TxDq
RL78
microcontroller
User device
Tx
RxDq
UART mode bit width (during communication at same potential) (reference)
1/Transfer rate
High-/Low-bit width
Baud rate error tolerance
TxDq
RxDq
Remarks 1.
2.
q: UART number (q = 0 to 3), g: PIM and POM number (g = 0, 1, 3)
fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number,
n: Channel number (mn = 00 to 03, 10 to 13))
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RL78/L13
(2) During communication at same potential (CSI mode) (master mode, SCKp... internal clock output)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
SCKp cycle time
tKCY1
SCKp high-/low-level width
SIp setup time (to SCKp↑)Note 2
334
2.4 V ≤ VDD ≤ 5.5 V
500
Note 1
MAX.
ns
ns
tKH1,
4.0 V ≤ VDD ≤ 5.5 V
tKCY1/2 − 24
ns
tKL1
2.7 V ≤ VDD ≤ 5.5 V
tKCY1/2 − 36
ns
2.4 V ≤ VDD ≤ 5.5 V
tKCY1/2 − 76
ns
4.0 V ≤ VDD ≤ 5.5 V
66
ns
2.7 V ≤ VDD ≤ 5.5 V
66
ns
2.4 V ≤ VDD ≤ 5.5 V
113
ns
38
ns
tSIK1
SIp hold time (from SCKp↑)
tKSI1
Delay time from SCKp↓ to
tKSO1
Note 3
2.7 V ≤ VDD ≤ 5.5 V
Note 1
Unit
C = 30 pF
Note 5
50
ns
SOp outputNote 4
Notes 1. The value must also be equal to or more than 4/fCLK.
2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes
“from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
5. C is the load capacitance of the SCKp and SOp output lines.
Caution Select the normal input buffer for the SIp pin and the normal output mode for the SOp pin and SCKp pin
by using port input mode register g (PIMg) and port output mode register g (POMg).
Remarks 1.
p: CSI number (p = 00, 10), m: Unit number (m = 0), n: Channel number (n = 0, 2),
g: PIM and POM numbers (g = 0, 1)
2.
fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number,
n: Channel number (mn = 00, 02))
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RL78/L13
(3) During communication at same potential (CSI mode) (slave mode, SCKp... external clock input)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
SCKp cycle time
Note 5
tKCY2
4.0 V ≤ VDD ≤ 5.5 V
SIp setup time
tKH2, tKL2
tSIK2
(to SCKp↑)Note 1
SIp hold time
MAX.
fMCK > 20 MHz
16/fMCK
ns
fMCK ≤ 20 MHz
12/fMCK
ns
fMCK > 16 MHz
16/fMCK
ns
fMCK ≤ 16 MHz
12/fMCK
ns
2.4 V ≤ VDD ≤ 5.5 V
12/fMCK and 1000
ns
2.7 V ≤ VDD ≤ 5.5 V
SCKp high-/low-level width
Unit
4.0 V ≤ VDD ≤ 5.5 V
tKCY2/2−14
ns
2.7 V ≤ VDD ≤ 5.5 V
tKCY2/2−16
ns
2.4 V ≤ VDD ≤ 5.5 V
tKCY2/2−36
ns
2.7 V ≤ VDD ≤ 5.5 V
1/fMCK+40
ns
2.4 V ≤ VDD ≤ 5.5 V
1/fMCK+60
ns
1/fMCK+62
ns
tKSI2
(from SCKp↑)Note 2
Delay time from SCKp↓ to
SOp output
tKSO2
C = 30 pFNote 4
Note 3
2.7 V ≤ VDD ≤ 5.5 V
2/fMCK+66
ns
2.4 V ≤ VDD ≤ 5.5 V
2/fMCK+113
ns
Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes
“from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. C is the load capacitance of the SOp output lines.
5. Transfer rate in SNOOZE mode: MAX. 1 Mbps
Caution Select the normal input buffer for the SIp pin and SCKp pin and the normal output mode for the SOp pin
by using port input mode register g (PIMg) and port output mode register g (POMg).
Remarks 1.
p: CSI number (p = 00, 10), m: Unit number (m = 0), n: Channel number (n = 0, 2),
g: PIM number (g = 0, 1)
2.
fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number,
n: Channel number (mn = 00, 02))
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
CSI mode connection diagram (during communication at same potential)
SCK
SCKp
RL78
microcontroller
SIp
SO
SOp
SI
User device
CSI mode serial transfer timing (during communication at same potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.)
tKCY1, 2
tKL1, 2
tKH1, 2
SCKp
tSIK1, 2
SIp
tKSI1, 2
Input data
tKSO1, 2
Output data
SOp
CSI mode serial transfer timing (during communication at same potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
tKCY1, 2
tKH1, 2
tKL1, 2
SCKp
tSIK1, 2
SIp
tKSI1, 2
Input data
tKSO1, 2
SOp
Remarks 1.
2.
Output data
p: CSI number (p = 00, 10)
m: Unit number, n: Channel number (mn = 00, 02)
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
(4) During communication at same potential (simplified I2C mode)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
SCLr clock frequency
fSCL
2.7 V ≤ VDD ≤ 5.5 V,
Unit
MAX.
400Note 1
kHz
100Note 1
kHz
Cb = 50 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
Hold time when SCLr = “L”
tLOW
2.7 V ≤ VDD ≤ 5.5 V,
1200
ns
4600
ns
1200
ns
4600
ns
1/fMCK + 220Note 2
ns
1/fMCK + 580Note 2
ns
Cb = 50 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
Hold time when SCLr = “H”
tHIGH
2.7 V ≤ VDD ≤ 5.5 V,
Cb = 50 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
Data setup time (reception)
tSU:DAT
2.7 V ≤ VDD ≤ 5.5 V,
Cb = 50 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
Data hold time (transmission)
tHD:DAT
2.7 V ≤ VDD ≤ 5.5 V,
0
770
ns
0
1420
ns
Cb = 50 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
Notes 1. The value must also be equal to or less than fMCK/4.
2. Set the fMCK value to keep the hold time of SCLr = “L” and SCLr = “H”.
Caution
Select the normal input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin
and the normal output mode for the SCLr pin by using port input mode register g (PIMg) and port
output mode register g (POMg).
(Remarks are listed on the next page.)
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
Simplified I2C mode connection diagram (during communication at same potential)
VDD
Rb
SDA
SDAr
RL78
microcontroller
User device
SCL
SCLr
Simplified I2C mode serial transfer timing (during communication at same potential)
1/fSCL
tLOW
tHIGH
SCLr
SDAr
tHD : DAT
tSU : DAT
Remarks 1. Rb[Ω]: Communication line (SDAr) pull-up resistance, Cb[F]: Communication line (SDAr, SCLr) load
capacitance
2. r: IIC number (r = 00, 10), g: PIM and POM number (g = 0, 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0),
n: Channel number (n = 0-3), mn = 00-03, 10-13)
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
(5) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) (1/2)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
Transfer rate
Reception
4.0 V ≤ VDD ≤ 5.5 V,
Unit
MAX.
fMCK/12Note
bps
2.0
Mbps
fMCK/12Note
bps
2.0
Mbps
fMCK/12Note
bps
2.0
Mbps
2.7 V ≤ Vb ≤ 4.0 V
Theoretical value of the maximum transfer rate
fCLK = 24 MHz, fMCK = fCLK
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V
Theoretical value of the maximum transfer rate
fCLK = 24 MHz, fMCK = fCLK
2.4 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V
Theoretical value of the maximum transfer rate
fCLK = 24 MHz, fMCK = fCLK
Note Transfer rate in SNOOZE mode is 4800 bps only.
Caution
Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for
the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). For
VIH and VIL, see the DC characteristics with TTL input buffer selected.
Remarks 1.
Vb[V]: Communication line voltage
2.
q: UART number (q = 0 to 3), g: PIM and POM number (g = 0, 1, 3)
3.
fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number,
n: Channel number (mn = 00 to 03, 10 to 13)
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(5) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) (2/2)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
Transfer rate
Transmission
4.0 V ≤ VDD ≤ 5.5 V,
Unit
MAX.
Note 1
bps
2.0Note 2
Mbps
Note 3
bps
1.2Note 4
Mbps
Note 5
bps
0.43Note 6
Mbps
2.7 V ≤ Vb ≤ 4.0 V
Theoretical value of the maximum transfer rate
Cb = 50 pF, Rb = 1.4 kΩ, Vb = 2.7 V
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V
Theoretical value of the maximum transfer rate
Cb = 50 pF, Rb = 2.7 kΩ, Vb = 2.3 V
2.4 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V
Theoretical value of the maximum transfer rate
Cb = 50 pF, Rb = 5.5 kΩ, Vb = 1.6 V
Notes 1.
The smaller maximum transfer rate derived by using fMCK/12 or the following expression is the valid maximum
transfer rate.
Expression for calculating the transfer rate when 4.0 V ≤ VDD ≤ 5.5 V and 2.7 V ≤ Vb ≤ 4.0 V
1
Maximum transfer rate =
{−Cb × Rb × ln (1 −
Baud rate error (theoretical value) =
2.2
Vb )} × 3
[bps]
2.2
1
− {−Cb × Rb × ln (1 − Vb )}
Transfer rate × 2
1
( Transfer rate ) × Number of transferred bits
× 100 [%]
* This value is the theoretical value of the relative difference between the transmission and reception sides.
2.
This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 1 above to calculate the maximum transfer rate under conditions of the customer.
3.
The smaller maximum transfer rate derived by using fMCK/12 or the following expression is the valid maximum
transfer rate.
Expression for calculating the transfer rate when 2.7 V ≤ VDD < 4.0 V and 2.3 V ≤ Vb ≤ 2.7 V
1
Maximum transfer rate =
{−Cb × Rb × ln (1 −
Baud rate error (theoretical value) =
2.0
Vb )} × 3
[bps]
2.0
1
− {−Cb × Rb × ln (1 − Vb )}
Transfer rate × 2
1
( Transfer rate ) × Number of transferred bits
× 100 [%]
* This value is the theoretical value of the relative difference between the transmission and reception sides.
4.
This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 3 above to calculate the maximum transfer rate under conditions of the customer.
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Notes 5.
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
The smaller maximum transfer rate derived by using fMCK/12 or the following expression is the valid maximum
transfer rate.
Expression for calculating the transfer rate when 2.4 V ≤ VDD < 3.3 V and 1.6 V ≤ Vb ≤ 2.0 V
1
Maximum transfer rate =
{−Cb × Rb × ln (1 −
Baud rate error (theoretical value) =
1.5
Vb )} × 3
[bps]
1.5
1
− {−Cb × Rb × ln (1 − Vb )}
Transfer rate × 2
1
( Transfer rate ) × Number of transferred bits
× 100 [%]
* This value is the theoretical value of the relative difference between the transmission and reception sides.
6.
This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 5 above to calculate the maximum transfer rate under conditions of the customer.
Caution Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for the
TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH
and VIL, see the DC characteristics with TTL input buffer selected.
UART mode connection diagram (during communication at different potential)
Vb
Rb
TxDq
Rx
RL78
microcontroller
RxDq
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Tx
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RL78/L13
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
UART mode bit width (during communication at different potential) (reference)
1/Transfer rate
Low-bit width
High-bit width
Baud rate error tolerance
TxDq
1/Transfer rate
High-/Low-bit width
Baud rate error tolerance
RxDq
Remarks 1. Rb[Ω]: Communication line (TxDq) pull-up resistance, Cb[F]: Communication line (TxDq) load capacitance,
Vb[V]: Communication line voltage
2. q: UART number (q = 0 to 3), g: PIM and POM number (g = 0, 1, 3)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn).
m: Unit number, n: Channel number (mn = 00 to 03, 10 to 13))
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
(6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (1/2)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
SCKp cycle time
tKCY1
tKCY1 ≥ 4/fCLK
4.0 V ≤ VDD ≤ 5.5 V,
Unit
MAX.
600
ns
1000
ns
2300
ns
tKCY1/2 − 150
ns
tKCY1/2 − 340
ns
tKCY1/2 − 916
ns
tKCY1/2 − 24
ns
tKCY1/2 − 36
ns
tKCY1/2 − 100
ns
162
ns
354
ns
958
ns
38
ns
38
ns
38
ns
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 1.8 V,
Cb = 30 pF, Rb = 5.5 kΩ
SCKp high-level width
tKH1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
SCKp low-level width
tKL1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
SIp setup time
tSIK1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
(to SCKp↑)Note 1
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
SIp hold time
tKSI1
(from SCKp↑)Note 1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
Delay time from SCKp↓ to
tKSO1
SOp outputNote 1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
200
ns
390
ns
966
ns
Cb = 30 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
(Note, Caution and Remark are listed on the next page.)
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Page 100 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (2/2)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
SIp setup time
tSIK1
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Unit
MAX.
88
ns
88
ns
220
ns
38
ns
38
ns
38
ns
Cb = 20 pF, Rb = 1.4 kΩ
(to SCKp↓)Note 2
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
SIp hold time
tKSI1
(from SCKp↓)Note 2
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
Delay time from SCKp↑ to
tKSO1
SOp outputNote 2
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
50
ns
50
ns
50
ns
Cb = 20 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
CSI mode connection diagram (during communication at different potential)
Vb
Rb
SCKp
RL78
microcontroller
Vb
Rb
SCK
SIp
SO
SOp
SI
User device
Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.
2. When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
Caution Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the
SOp pin and SCKp pin by using port input mode register g (PIMg) and port output mode register g
(POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
Remarks 1. Rb[Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb[F]: Communication line (SCKp, SOp) load
capacitance, Vb[V]: Communication line voltage
2. p: CSI number (p = 00, 10), m: Unit number, n: Channel number (mn = 00, 02),
g: PIM and POM number (g = 0, 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn).
m: Unit number, n: Channel number (mn = 00))
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
CSI mode serial transfer timing (master mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.)
tKCY1
tKL1
tKH1
SCKp
tSIK1
SIp
tKSI1
Input data
tKSO1
Output data
SOp
CSI mode serial transfer timing (master mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
tKCY1
tKL1
tKH1
SCKp
tSIK1
SIp
tKSI1
Input data
tKSO1
SOp
Output data
Remark p: CSI number (p = 00, 10), m: Unit number, n: Channel number (mn = 00, 02),
g: PIM and POM number (g = 0, 1)
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Aug 12, 2016
Page 102 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(7) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (slave mode, SCKp... external clock input)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
SCKp cycle time
Note 1
tKCY2
SIp setup time
tKH2, tKL2
tSIK2
(to SCKp↑)Note 2
SIp hold time
tKSI2
(from SCKp↑)Note 3
Delay time from SCKp↓ to
tKSO2
SOp outputNote 4
MAX.
4.0 V ≤ VDD ≤ 5.5 V,
20 MHz < fMCK
24/fMCK
ns
2.7 V ≤ Vb ≤ 4.0 V
8 MHz < fMCK ≤ 20 MHz
20/fMCK
ns
4 MHz < fMCK ≤ 8 MHz
16/fMCK
ns
fMCK ≤ 4 MHz
12/fMCK
ns
2.7 V ≤ VDD < 4.0 V,
20 MHz < fMCK
32/fMCK
ns
2.3 V ≤ Vb ≤ 2.7 V
16 MHz < fMCK ≤ 20 MHz
28/fMCK
ns
8 MHz < fMCK ≤ 16 MHz
24/fMCK
ns
4 MHz < fMCK ≤ 8 MHz
16/fMCK
ns
fMCK ≤ 4 MHz
12/fMCK
ns
2.4 V ≤ VDD < 3.3 V,
20 MHz < fMCK
72/fMCK
ns
1.6 V ≤ Vb ≤ 2.0 V
16 MHz < fMCK ≤ 20 MHz
64/fMCK
ns
8 MHz < fMCK ≤ 16 MHz
52/fMCK
ns
4 MHz < fMCK ≤ 8 MHz
32/fMCK
ns
fMCK ≤ 4 MHz
SCKp high-/low-level width
Unit
20/fMCK
ns
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V
tKCY2/2 − 24
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V
tKCY2/2 − 36
ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V
tKCY2/2 − 100
ns
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V
1/fMCK + 40
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V
1/fMCK + 40
ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V
1/fMCK + 60
ns
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V
1/fMCK + 62
ns
2.7 V ≤ VDD ≤ 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V
1/fMCK + 62
ns
2.4 V ≤ VDD ≤ 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V
1/fMCK + 62
ns
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
2/fMCK + 240
ns
2/fMCK + 428
ns
2/fMCK + 1146
ns
Cb = 30 pF, Rb = 1.4 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
(Notes and Caution are listed on the next page, and Remarks are listed on the page after the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 103 of 123
RL78/L13
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
CSI mode connection diagram (during communication at different potential)
Vb
Rb
SCKp
RL78
microcontroller
SCK
SIp
SO
SOp
SI
User device
Notes 1. Transfer rate in SNOOZE mode: MAX. 1 Mbps
2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓”
when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes
“from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
Caution Select the TTL input buffer for the SIp pin and SCKp pin and the N-ch open drain output (VDD tolerance)
mode for the SOp pin by using port input mode register g (PIMg) and port output mode register g
(POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 104 of 123
RL78/L13
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
CSI mode serial transfer timing (slave mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.)
tKCY2
tKL2
tKH2
SCKp
tSIK2
SIp
tKSI2
Input data
tKSO2
Output data
SOp
CSI mode serial transfer timing (slave mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
tKCY2
tKL2
tKH2
SCKp
tSIK2
SIp
tKSI2
Input data
tKSO2
SOp
Output data
Remarks 1. Rb[Ω]: Communication line (SOp) pull-up resistance, Cb[F]: Communication line (SOp) load capacitance,
Vb[V]: Communication line voltage
2. p: CSI number (p = 00, 10), m: Unit number, n: Channel number (mn = 00, 02),
g: PIM and POM number (g = 0, 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn)
m: Unit number, n: Channel number (mn = 00, 02))
R01DS0168EJ0210 Rev.2.10
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Page 105 of 123
RL78/L13
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
(8) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode) (1/2)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
SCLr clock frequency
fSCL
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Unit
MAX.
400Note 1
kHz
400Note 1
kHz
100Note 1
kHz
100Note 1
kHz
100Note 1
kHz
Cb = 50 pF, Rb = 2.7 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 50 pF, Rb = 2.7 kΩ
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 100 pF, Rb = 5.5 kΩ
Hold time when SCLr = “L”
tLOW
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
1200
ns
1200
ns
4600
ns
4600
ns
4650
ns
620
ns
500
ns
2700
ns
2400
ns
1830
ns
Cb = 50 pF, Rb = 2.7 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 50 pF, Rb = 2.7 kΩ
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 100 pF, Rb = 5.5 kΩ
Hold time when SCLr = “H”
tHIGH
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 50 pF, Rb = 2.7 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb < 2.7 V,
Cb = 50 pF, Rb = 2.7 kΩ
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 100 pF, Rb = 5.5 kΩ
(Notes and Caution are listed on the next page, and Remarks are listed on the page after the next page.)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 106 of 123
RL78/L13
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
(8) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode) (2/2)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
MIN.
Data setup time (reception)
Data hold time (transmission)
tSU:DAT
tHD:DAT
Unit
MAX.
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 50 pF, Rb = 2.7 kΩ
1/fMCK + 340Note 2
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 50 pF, Rb = 2.7 kΩ
1/fMCK + 340Note 2
ns
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
1/fMCK + 760Note 2
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
1/fMCK + 760Note 2
ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 100 pF, Rb = 5.5 kΩ
1/fMCK + 570Note 2
ns
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 50 pF, Rb = 2.7 kΩ
0
770
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 50 pF, Rb = 2.7 kΩ
0
770
ns
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
0
1420
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
0
1420
ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V ,
Cb = 100 pF, Rb = 5.5 kΩ
0
1215
ns
Notes 1. The value must also be equal to or less than fMCK/4.
2. Set the fMCK value to keep the hold time of SCLr = “L” and SCLr = “H”.
Caution
Select the TTL input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin and
the N-ch open drain output (VDD tolerance) mode for the SCLr pin by using port input mode register g
(PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL
input buffer selected.
(Remarks are listed on the next page.)
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Aug 12, 2016
Page 107 of 123
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
Simplified I2C mode connection diagram (during communication at different potential)
Vb
Rb
Vb
Rb
SDA
SDAr
RL78
microcontroller
User device
SCL
SCLr
Simplified I2C mode serial transfer timing (during communication at different potential)
1/fSCL
tLOW
tHIGH
SCLr
SDAr
tHD : DAT
tSU : DAT
Remarks 1. Rb[Ω]: Communication line (SDAr, SCLr) pull-up resistance, Cb[F]: Communication line (SDAr, SCLr) load
capacitance, Vb[V]: Communication line voltage
2. r: IIC number (r = 00, 10), g: PIM, POM number (g = 0, 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n:
Channel number (mn = 00, 02)
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3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.5.2 Serial interface IICA
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
HS (high-speed main) Mode
Standard Mode
Unit
Fast Mode
MIN.
MAX.
MIN.
MAX.
−
−
0
400
kHz
0
100
−
−
kHz
Fast mode: fCLK ≥ 3.5 MHz
SCLA0 clock frequency
fSCL
Setup time of restart condition
tSU:STA
4.7
0.6
μs
Hold timeNote 1
tHD:STA
4.0
0.6
μs
Hold time when SCLA0 = “L”
tLOW
4.7
1.3
μs
Hold time when SCLA0 = “H”
tHIGH
4.0
0.6
μs
tSU:DAT
250
100
ns
Normal mode: fCLK ≥ 1 MHz
Data setup time (reception)
Data hold time (transmission)
tHD:DAT
Note 2
0
Note 3
3.45
0
Note 3
0.9
μs
Setup time of stop condition
tSU:STO
4.0
0.6
μs
Bus-free time
tBUF
4.7
1.3
μs
Notes 1.
2.
Remark
The first clock pulse is generated after this period when the start/restart condition is detected.
The maximum value (MAX.) of tHD:DAT is during normal transfer and a wait state is inserted in the ACK
(acknowledge) timing.
The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up
resistor) at that time in each mode are as follows.
Standard mode: Cb = 400 pF, Rb = 2.7 kΩ
Fast mode:
Cb = 320 pF, Rb = 1.1 kΩ
IICA serial transfer timing
tLOW
tR
SCLA0
tHD:DAT
tHD:STA
tHIGH
tF
tSU:STA
tHD:STA
tSU:STO
tSU:DAT
SDAA0
tBUF
Stop
condition
Start
condition
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Restart
condition
Stop
condition
Page 109 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.6 Analog Characteristics
3.6.1 A/D converter characteristics
Classification of A/D converter characteristics
Reference Voltage
Input channel
Reference voltage (+) = AVREFP
Reference voltage (+) = VDD
Reference voltage (+) = VBGR
Reference voltage (−) = AVREFM
Reference voltage (−) = VSS
Reference voltage (−) = AVREFM
–
See 3.6.1 (2).
See 3.6.1 (3).
ANI0, ANI1
ANI16 to ANI25
See 3.6.1 (1).
Internal reference voltage
See 3.6.1 (1).
–
Temperature sensor output
voltage
(1) When reference voltage (+) = AVREFP/ANI0 (ADREFP1 = 0, ADREFP0 = 1), reference voltage (−) = AVREFM/ANI1
(ADREFM = 1), target pins: ANI16 to ANI25, internal reference voltage, and temperature sensor output voltage
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = AVREFP, Reference voltage (−) = AVREFM =
0 V)
Parameter
Resolution
Symbol
Conditions
MIN.
RES
Overall error
Note 1
AINL
TYP.
8
10-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
1.2
MAX.
Unit
10
bit
±5.0
LSB
AVREFP = VDDNote 3
Conversion time
tCONV
3.6 V ≤ VDD ≤ 5.5 V
2.125
39
μs
2.7 V ≤ VDD ≤ 5.5 V
3.1875
39
μs
2.4 V ≤ VDD ≤ 5.5 V
17
39
μs
10-bit resolution
3.6 V ≤ VDD ≤ 5.5 V
2.375
39
μs
Target pin: Internal reference
2.7 V ≤ VDD ≤ 5.5 V
3.5625
39
μs
2.4 V ≤ VDD ≤ 5.5 V
17
39
μs
2.4 V ≤ VDD ≤ 5.5 V
±0.35
%FSR
2.4 V ≤ VDD ≤ 5.5 V
±0.35
%FSR
2.4 V ≤ VDD ≤ 5.5 V
±3.5
LSB
2.4 V ≤ VDD ≤ 5.5 V
±2.0
LSB
AVREFP
V
10-bit resolution
Target pin: ANI16 to ANI25
voltage, and temperature
sensor output voltage
(HS (high-speed main) mode)
Zero-scale error
Notes 1, 2
EZS
10-bit resolution
AVREFP = VDDNote 3
Full-scale errorNotes 1, 2
EFS
10-bit resolution
AVREFP = VDDNote 3
Integral linearity errorNote 1
ILE
10-bit resolution
AVREFP = VDDNote 3
Differential linearity errorNote 1
DLE
10-bit resolution
AVREFP = VDDNote 3
Analog input voltage
VAIN
ANI16 to ANI25
Internal reference voltage
0
VBGRNote 4
V
VTMPS25Note 4
V
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode))
Temperature sensor output voltage
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode))
(Notes are listed on the next page.)
R01DS0168EJ0210 Rev.2.10
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Page 110 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. When AVREFP < VDD, the MAX. values are as follows.
Overall error:
Add ±4 LSB to the MAX. value when AVREFP = VDD.
Zero-scale error/Full-scale error:
Add ±0.2%FSR to the MAX. value when AVREFP = VDD.
Integral linearity error/ Differential linearity error: Add ±2 LSB to the MAX. value when AVREFP = VDD.
4. See 3.6.2 Temperature sensor/internal reference voltage characteristics.
(2) When reference voltage (+) = VDD (ADREFP1 = 0, ADREFP0 = 0), reference voltage (−) = VSS (ADREFM = 0),
target pins: ANI0, ANI1, ANI16 to ANI25, internal reference voltage, and temperature sensor output voltage
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VDD, Reference voltage (−) = VSS)
Parameter
Symbol
Resolution
Conditions
MIN.
RES
TYP.
8
MAX.
Unit
10
bit
Overall error
AINL
10-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±7.0
LSB
Conversion time
tCONV
10-bit resolution
3.6 V ≤ VDD ≤ 5.5 V
2.125
39
μs
Target pin:
2.7 V ≤ VDD ≤ 5.5 V
3.1875
39
μs
2.4 V ≤ VDD ≤ 5.5 V
17
39
μs
2.375
39
μs
3.5625
39
μs
17
39
μs
Note 1
ANI0, ANI1, ANI16 to ANI25
3.6 V ≤ VDD ≤ 5.5 V
Target pin: Internal reference 2.7 V ≤ VDD ≤ 5.5 V
voltage, and temperature
2.4 V ≤ VDD ≤ 5.5 V
sensor output voltage
10-bit resolution
1.2
(HS (high-speed main)
mode)
Zero-scale error
Notes 1, 2
Full-scale error
Notes 1, 2
Integral linearity error
Note 1
Differential linearity error
Analog input voltage
Note 1
EZS
10-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±0.60
%FSR
EFS
10-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±0.60
%FSR
ILE
10-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±4.0
LSB
DLE
10-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±2.0
LSB
VAIN
ANI0, ANI1, ANI16 to ANI25
VDD
V
Internal reference voltage
0
VBGRNote 3
V
VTMPS25Note 3
V
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode))
Temperature sensor output voltage
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode))
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. See 3.6.2 Temperature sensor/internal reference voltage characteristics.
R01DS0168EJ0210 Rev.2.10
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Page 111 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(3) When reference voltage (+) = internal reference voltage (ADREFP1 = 1, ADREFP0 = 0), reference voltage (−) =
AVREFM/ANI1 (ADREFM = 1), target pins: ANI0, ANI16 to ANI25
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VBGRNote 3,
Reference voltage (−) = AVREFMNote 4 = 0 V, HS (high-speed main) mode)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Resolution
RES
Conversion time
tCONV
8-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
39
μs
Zero-scale errorNotes 1, 2
EZS
8-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±0.60
%FSR
Integral linearity errorNote 1
ILE
8-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±2.0
LSB
Differential linearity error
DLE
8-bit resolution
2.4 V ≤ VDD ≤ 5.5 V
±1.0
LSB
Note 1
Analog input voltage
8
Unit
17
VAIN
0
bit
VBGR
Note 3
V
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. See 3.6.2 Temperature sensor/internal reference voltage characteristics.
4. When reference voltage (−) = VSS, the MAX. values are as follows.
Zero-scale error:
Add ±0.35%FSR to the AVREFM MAX. value.
Integral linearity error:
Add ±0.5 LSB to the AVREFM MAX. value.
Differential linearity error: Add ±0.2 LSB to the AVREFM MAX. value.
3.6.2 Temperature sensor/internal reference voltage characteristics
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, HS (high-speed main) mode)
Parameter
Symbol
Conditions
Temperature sensor output voltage
VTMPS25
ADS register = 80H, TA = +25°C
Internal reference output voltage
VBGR
ADS register = 81H
Temperature coefficient
FVTMPS
Temperature sensor that depends on the
MIN.
TYP.
MAX.
1.05
1.38
1.45
Unit
V
1.5
−3.6
V
mV/°C
temperature
Operation stabilization wait time
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
tAMP
5
μs
Page 112 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.6.3 Comparator
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Input voltage range
Conditions
MIN.
Ivref
TYP.
0
MAX.
Unit
VDD −
V
1.4
−0.3
Ivcmp
VDD +
V
0.3
Output delay
td
VDD = 3.0 V
Input slew rate > 50 mV/μs
Comparator high-speed mode,
standard mode
1.2
μs
Comparator high-speed mode,
window mode
2.0
μs
5.0
μs
Comparator low-speed mode,
standard mode
High-electric-potential
VTW+
Comparator high-speed mode,
window mode
0.66VDD 0.76VDD 0.86VDD
V
VTW−
Comparator high-speed mode,
window mode
0.14VDD 0.24VDD 0.34VDD
V
reference voltage
Low-electric-potential
reference voltage
Operation stabilization
3.0
tCMP
μs
100
wait time
Internal reference
VBGR
2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode
1.38
1.45
1.50
V
output voltageNote
Note Cannot be used in subsystem clock operation and STOP mode.
3.6.4 POR circuit characteristics
(TA = −40 to +105°C, VSS = 0 V)
Parameter
Detection voltage
Minimum pulse width
Note
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
VPOR
When power supply rises
1.45
1.51
1.57
V
VPDR
When power supply falls
1.44
1.50
1.56
V
TPW
μs
300
Note This is the time required for the POR circuit to execute a reset operation when VDD falls below VPDR. When the
microcontroller enters STOP mode and when the main system clock (fMAIN) has been stopped by setting bit 0
(HIOSTOP) and bit 7 (MSTOP) of the clock operation status control register (CSC), this is the time required for
the POR circuit to execute a reset operation between when VDD falls below 0.7 V and when VDD rises to VPOR or
higher.
TPW
Supply voltage (VDD)
VPOR
VPDR or 0.7 V
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 113 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.6.5 LVD circuit characteristics
LVD Detection Voltage of Reset Mode and Interrupt Mode
(TA = −40 to +105°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Detection
Symbol
Supply voltage level
VLVD0
voltage
VLVD1
VLVD2
VLVD3
VLVD4
VLVD5
VLVD6
VLVD7
Minimum pulse width
Conditions
MIN.
TYP.
MAX.
Unit
When power supply rises
3.90
4.06
4.22
V
When power supply falls
3.83
3.98
4.13
V
When power supply rises
3.60
3.75
3.90
V
When power supply falls
3.53
3.67
3.81
V
When power supply rises
3.01
3.13
3.25
V
When power supply falls
2.94
3.06
3.18
V
When power supply rises
2.90
3.02
3.14
V
When power supply falls
2.85
2.96
3.07
V
When power supply rises
2.81
2.92
3.03
V
When power supply falls
2.75
2.86
2.97
V
When power supply rises
2.71
2.81
2.92
V
When power supply falls
2.64
2.75
2.86
V
When power supply rises
2.61
2.71
2.81
V
When power supply falls
2.55
2.65
2.75
V
When power supply rises
2.51
2.61
2.71
V
When power supply falls
2.45
2.55
2.65
V
tLW
μs
300
Detection delay time
300
μs
LVD Detection Voltage of Interrupt & Reset Mode
(TA = −40 to +105°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Interrupt and reset
VLVD5
mode
VLVD4
Conditions
MIN.
TYP.
MAX.
Unit
2.64
2.75
2.86
V
Rising release reset voltage
2.81
2.92
3.03
V
Falling interrupt voltage
2.75
2.86
2.97
V
Rising release reset voltage
2.90
3.02
3.14
V
Falling interrupt voltage
2.85
2.96
3.07
V
Rising release reset voltage
3.90
4.06
4.22
V
Falling interrupt voltage
3.83
3.98
4.13
V
MIN.
TYP.
MAX.
Unit
54
V/ms
VPOC2, VPOC1, VPOC0 = 0, 1, 1, falling reset voltage
VLVD3
VLVD0
LVIS1, LVIS0 = 1, 0
LVIS1, LVIS0 = 0, 1
LVIS1, LVIS0 = 0, 0
3.6.6 Supply voltage rise time
(TA = −40 to +105°C, VSS = 0 V)
Parameter
VDD rise slope
Symbol
Conditions
SVDD
Caution Make sure to keep the internal reset state by the LVD circuit or an external reset until VDD reaches the
operating voltage range shown in 3.4 AC Characteristics.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 114 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.7 LCD Characteristics
3.7.1 External resistance division method
(1) Static display mode
(TA = −40 to +105°C, VL4 (MIN.) ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
LCD drive voltage
Symbol
Conditions
VL4
MIN.
TYP.
2.0
MAX.
Unit
VDD
V
MAX.
Unit
VDD
V
MAX.
Unit
VDD
V
(2) 1/2 bias method, 1/4 bias method
(TA = −40 to +105°C, VL4 (MIN.) ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
LCD drive voltage
Symbol
Conditions
VL4
MIN.
TYP.
2.7
(3) 1/3 bias method
(TA = −40 to +105°C, VL4 (MIN.) ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
LCD drive voltage
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Symbol
VL4
Conditions
MIN.
2.5
TYP.
Page 115 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.7.2 Internal voltage boosting method
(1) 1/3 bias method
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
LCD output voltage variation range
VL1
Conditions
Tripler output voltage
Reference voltage setup time
Voltage boost wait time
Note 2
Note 3
TYP.
MAX.
Unit
C1 to C4Note 1
VLCD = 04H
0.90
1.00
1.08
V
= 0.47 μFNote 2
VLCD = 05H
0.95
1.05
1.13
V
VLCD = 06H
1.00
1.10
1.18
V
VLCD = 07H
1.05
1.15
1.23
V
VLCD = 08H
1.10
1.20
1.28
V
VLCD = 09H
1.15
1.25
1.33
V
VLCD = 0AH
1.20
1.30
1.38
V
VLCD = 0BH
1.25
1.35
1.43
V
VLCD = 0CH
1.30
1.40
1.48
V
VLCD = 0DH
1.35
1.45
1.53
V
VLCD = 0EH
1.40
1.50
1.58
V
VLCD = 0FH
1.45
1.55
1.63
V
VLCD = 10H
1.50
1.60
1.68
V
VLCD = 11H
1.55
1.65
1.73
V
VLCD = 12H
1.60
1.70
1.78
V
VLCD = 13H
Doubler output voltage
MIN.
1.65
1.75
1.83
V
VL2
C1 to C4Note 1 = 0.47 μF
2 VL1 − 0.10
2 VL1
2 VL1
V
VL4
C1 to C4Note 1 = 0.47 μF
3 VL1 − 0.15
3 VL1
3 VL1
V
tVWAIT1
tVWAIT2
C1 to C4
Note 1
= 0.47 μF
5
ms
500
ms
Notes 1. This is a capacitor that is connected between voltage pins used to drive the LCD.
C1: A capacitor connected between CAPH and CAPL
C2: A capacitor connected between VL1 and GND
C3: A capacitor connected between VL2 and GND
C4: A capacitor connected between VL4 and GND
C1 = C2 = C3 = C4 = 0.47 μF ± 30%
2. This is the time required to wait from when the reference voltage is specified by using the VLCD register (or
when the internal voltage boosting method is selected (by setting the MDSET1 and MDSET0 bits of the
LCDM0 register to 01B) if the default value reference voltage is used) until voltage boosting starts (VLCON =
1).
3. This is the wait time from when voltage boosting is started (VLCON = 1) until display is enabled (LCDON = 1).
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 116 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
(2) 1/4 bias method
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
LCD output voltage variation range
VL1
Conditions
MIN.
TYP.
MAX.
Unit
C1 to C5
VLCD = 04H
0.90
1.00
1.08
V
= 0.47 μFNote 2
VLCD = 05H
0.95
1.05
1.13
V
VLCD = 06H
1.00
1.10
1.18
V
VLCD = 07H
1.05
1.15
1.23
V
VLCD = 08H
1.10
1.20
1.28
V
VLCD = 09H
1.15
1.25
1.33
V
VLCD = 0AH
1.20
1.30
1.38
V
Note 1
Doubler output voltage
VL2
C1 to C5Note 1 = 0.47 μF
2 VL1 − 0.08
2 VL1
2 VL1
V
Tripler output voltage
VL3
C1 to C5
= 0.47 μF
3 VL1 − 0.12
3 VL1
3 VL1
V
Quadruply output voltage
VL4
C1 to C5
= 0.47 μF
4 VL1 − 0.16
4 VL1
4 VL1
V
Reference voltage setup time
Voltage boost wait time
Note 2
Note 3
Note 1
Note 1
tVWAIT1
tVWAIT2
C1 to C5
Note 1
= 0.47 μF
5
ms
500
ms
Notes 1. This is a capacitor that is connected between voltage pins used to drive the LCD.
C1: A capacitor connected between CAPH and CAPL
C2: A capacitor connected between VL1 and GND
C3: A capacitor connected between VL2 and GND
C4: A capacitor connected between VL3 and GND
C5: A capacitor connected between VL4 and GND
C1 = C2 = C3 = C4 = C5 = 0.47 μF ± 30%
2. This is the time required to wait from when the reference voltage is specified by using the VLCD register (or
when the internal voltage boosting method is selected (by setting the MDSET1 and MDSET0 bits of the
LCDM0 register to 01B) if the default value reference voltage is used) until voltage boosting starts (VLCON =
1).
3. This is the wait time from when voltage boosting is started (VLCON = 1) until display is enabled (LCDON = 1).
3.7.3 Capacitor split method
(1) 1/3 bias method
(TA = −40 to +105°C, 2.4 V ≤ VD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
VL4 voltage
VL4
C1 to C4 = 0.47 μFNote 2
VL2 voltage
VL2
C1 to C4 = 0.47 μFNote 2
MIN.
TYP.
VDD
2/3 VL4 −
2/3 VL4
0.1
VL1 voltage
VL1
C1 to C4 = 0.47 μFNote 2
1/3 VL4 −
0.1
Capacitor split wait timeNote 1
Notes 1.
2.
tVWAIT
MAX.
100
Unit
V
2/3 VL4 +
V
0.1
1/3 VL4
1/3 VL4 +
V
0.1
ms
This is the wait time from when voltage bucking is started (VLCON = 1) until display is enabled (LCDON = 1).
This is a capacitor that is connected between voltage pins used to drive the LCD.
C1: A capacitor connected between CAPH and CAPL
C2: A capacitor connected between VL1 and GND
C3: A capacitor connected between VL2 and GND
C4: A capacitor connected between VL4 and GND
C1 = C2 = C3 = C4 = 0.47 pF±30 %
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 117 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.8 RAM Data Retention Characteristics
(TA = −40 to +105°C)
Parameter
Data retention supply voltage
Symbol
Conditions
VDDDR
MIN.
1.44
TYP.
Note
MAX.
Unit
5.5
V
Note This depends on the POR detection voltage. For a falling voltage, data in RAM are retained until the voltage
reaches the level that triggers a POR reset but not once it reaches the level at which a POR reset is generated.
Operation mode
STOP mode
RAM data retention mode
VDD
VDDDR
STOP instruction execution
Standby release signal
(interrupt request)
3.9 Flash Memory Programming Characteristics
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
System clock frequency
fCLK
2.4 V ≤ VDD ≤ 5.5 V
Number of code flash rewritesNote 1, 2, 3
Cerwr
Retained for 20 years
MIN.
TYP.
1
MAX.
Unit
24
MHz
1,000
Times
TA = 85°C Note 4
Retained for 1 year
Number of data flash rewritesNote 1, 2, 3
1,000,000
TA = 25°C
Retained for 5 years
100,000
TA = 85°C Note 4
Retained for 20 years
10,000
TA = 85°C Note 4
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. This characteristic indicates the flash memory characteristic and based on Renesas Electronics reliability test.
4. This temperature is the average value at which data are retained.
Remark
When updating data multiple times, use the flash memory as one for updating data.
3.10 Dedicated Flash Memory Programmer Communication (UART)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Transfer rate
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Symbol
Conditions
During serial programming
MIN.
115,200
TYP.
MAX.
Unit
1,000,000
bps
Page 118 of 123
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = −40 to +105°C)
RL78/L13
3.11 Timing Specifications for Switching Flash Memory Programming Modes
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Time to complete the
tSUINIT
Conditions
MIN.
POR and LVD reset must be released before
TYP.
MAX.
Unit
100
ms
the external reset is released.
communication for the initial setting
after the external reset is released
Time to release the external reset
tSU
POR and LVD reset must be released before
10
μs
1
ms
the external reset is released.
after the TOOL0 pin is set to the low
level
Time to hold the TOOL0 pin at the
low level after the external reset is
tHD
POR and LVD reset must be released before
the external reset is released.
released
(excluding the processing time of
the firmware to control the flash
memory)
RESET
723 μs + tHD
00H reception
processing
(TOOLRxD, TOOLTxD mode)
time
TOOL0
tSU
tSUINIT
The low level is input to the TOOL0 pin.
The external reset is released (POR and LVD reset must be released before the external
reset is released.).
The TOOL0 pin is set to the high level.
Setting of the flash memory programming mode by UART reception and completion the
baud rate setting.
Remark tSUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is released
during this period.
tSU:
Time to release the external reset after the TOOL0 pin is set to the low level
tHD:
Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing
time of the firmware to control the flash memory)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 119 of 123
RL78/L13
4. PACKAGE DRAWINGS
4. PACKAGE DRAWINGS
4.1 64-pin Products
R5F10WLAAFA, R5F10WLCAFA, R5F10WLDAFA, R5F10WLEAFA, R5F10WLFAFA, R5F10WLGAFA
JEITA Package Code
RENESAS Code
Previous Code
MASS (TYP.) [g]
P-LQFP64-12x12-0.65
PLQP0064JA-A
P64GK-65-UET-2
0.51
HD
D
detail of lead end
48
33
49
32
A3
c
θ
E
L
Lp
HE
L1
(UNIT:mm)
17
64
1
16
ZE
e
ZD
b
x
M
S
A2
S
S
NOTE
Each lead centerline is located within 0.13 mm of
its true position at maximum material condition.
DIMENSIONS
12.00±0.20
E
12.00±0.20
HD
14.00±0.20
HE
14.00±0.20
A
1.60 MAX.
A1
0.10±0.05
A2
1.40±0.05
A3
A
y
ITEM
D
A1
0.25
b
0.32 +0.08
−0.07
c
0.145 +0.055
−0.045
L
0.50
Lp
0.60±0.15
L1
θ
1.00±0.20
3° +5°
−3°
e
0.65
x
0.13
y
0.10
ZD
1.125
ZE
1.125
2012 Renesas Electronics Corporation. All rights reserved.
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 120 of 123
S
64
49
ZD
1
48
D
HD
e
1
y S
Index mark
*1
6
33
*3
bp
17
32
x
ZE
F
Previous Code
64P6Q-A / FP-64K / FP-64KV
E
*2
RENESAS Code
PLQP0064KB-A
b1
bp
c1
Detail F
Terminal cross section
MASS[Typ.]
0.3g
A
HE
JEITA Package Code
P-LFQFP64-10x10-0.50
A2
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
A1
c
L1
L
e
x
y
ZD
ZE
L
L1
D
E
A2
HD
HE
A
A1
bp
b1
c
c1
Min Nom Max
9.9 10.0 10.1
9.9 10.0 10.1
1.4
11.8 12.0 12.2
11.8 12.0 12.2
1.7
0.05 0.1 0.15
0.15 0.20 0.25
0.18
0.09 0.145 0.20
0.125
0°
8°
0.5
0.08
0.08
1.25
1.25
0.35 0.5 0.65
1.0
Reference Dimension in Millimeters
Symbol
NOTE)
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
RL78/L13
4. PACKAGE DRAWINGS
R5F10WLAAFB, R5F10WLCAFB, R5F10WLDAFB, R5F10WLEAFB, R5F10WLFAFB, R5F10WLGAFB,
R5F10WLAGFB, R5F10WLCGFB, R5F10WLDGFB, R5F10WLEGFB, R5F10WLFGFB, R5F10WLGGFB
Page 121 of 123
c
RL78/L13
4. PACKAGE DRAWINGS
4.2 80-pin Products
R5F10WMAAFA, R5F10WMCAFA, R5F10WMDAFA, R5F10WMEAFA, R5F10WMFAFA, R5F10WMGAFA
JEITA Package Code
RENESAS Code
Previous Code
MASS (TYP.) [g]
P-LQFP80-14x14-0.65
PLQP0080JB-E
P80GC-65-UBT-2
0.69
HD
detail of lead end
D
L1
A
A3
c
60
61
41
40
L
Lp
B
E
HE
Referance
Symbol
80
1
21
20
Dimension in Millimeters
Min
Nom
Max
D
13.80
14.00
14.20
14.20
E
13.80
14.00
HD
17.00
17.20
17.40
HE
17.00
17.20
17.40
A1
0.05
0.125
0.20
A2
1.35
1.40
1.45
bp
0.26
0.32
0.38
c
0.10
0.145
0.20
Lp
0.736
0.886
1.036
L1
1.40
1.60
1.80
0°
3°
8°
A
ZE
e
ZD
1.70
A3
bp
x
M
S AB
L
A
A2
S
e
y
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
0.25
0.80
0.65
x
S
A1
0.13
y
0.10
ZD
0.825
ZE
0.825
Page 122 of 123
RL78/L13
4. PACKAGE DRAWINGS
R5F10WMAAFB, R5F10WMCAFB, R5F10WMDAFB, R5F10WMEAFB, R5F10WMFAFB, R5F10WMGAFB,
R5F10WMAGFB, R5F10WMCGFB, R5F10WMDGFB, R5F10WMEGFB, R5F10WMFGFB, R5F10WMGGFB
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 123 of 123
Revision History
RL78/L13 Data Sheet
Description
Rev.
Date
Page
0.01
Apr 13, 2012
-
First Edition issued
Summary
0.02
Oct 31, 2012
-
Change of the number of segment pins
• 64-pin products: 36 pins
• 80-pin products: 51 pins
2.10
Aug 12, 2016
1
Modification of features of 16-bit timer and 16-bit timer KB20 (IH) in 1.1 Features
5
Addition of product name (RL78/L13) and description (Top View) in 1.3.1 64-pin
products
6
Addition of product name (RL78/L13) and description (Top View) in 1.3.2 80-pin
products
10
Modification of functional overview of main system clock in 1.6 Outline of Functions
15
Modification of description in Absolute Maximum Ratings (3/3)
17, 18
Modification of description in 2.3.1 Pin characteristics
38
Modification of remark 3 in 2.5.1 (4) During communication at same potential
(simplified I2C mode)
68
Modification of the title and note, and addition of caution in 2.8 RAM Data Retention
Characteristics
70
Addition of Remark
74
Modification of description in Absolute Maximum Ratings (TA = 25 °C) (3/3)
76
Modification of description in 3.3.1 Pin characteristics
95
Modification of remark 3 in 3.5.1 (4) During communication at same potential
(simplified I2C mode)
118
Modification of the title and note, and addition of caution in 3.8 RAM Data Retention
Characteristics
All trademarks and registered trademarks are the property of their respective owners.
SuperFlash is a registered trademark of Silicon Storage Technology, Inc. in several countries including the United
States and Japan.
Caution: This product uses SuperFlash® technology licensed from Silicon Storage Technology, Inc.
C-1
NOTES FOR CMOS DEVICES
(1) VOLTAGE APPLICATION WAVEFORM AT INPUT PIN: Waveform distortion due to input noise or a
reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL
(MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise
from entering the device when the input level is fixed, and also in the transition period when the input level
passes through the area between VIL (MAX) and VIH (MIN).
(2) HANDLING OF UNUSED INPUT PINS: Unconnected CMOS device inputs can be cause of malfunction. If
an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc.,
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of
CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be
connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling
related to unused pins must be judged separately for each device and according to related specifications
governing the device.
(3) PRECAUTION AGAINST ESD: A strong electric field, when exposed to a MOS device, can cause
destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it when it has occurred.
Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended
to avoid using insulators that easily build up static electricity. Semiconductor devices must be stored and
transported in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work benches and floors should be grounded. The operator should be grounded using a wrist
strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken
for PW boards with mounted semiconductor devices.
(4) STATUS BEFORE INITIALIZATION: Power-on does not necessarily define the initial status of a MOS
device. Immediately after the power source is turned ON, devices with reset functions have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A
device is not initialized until the reset signal is received. A reset operation must be executed immediately
after power-on for devices with reset functions.
(5) POWER ON/OFF SEQUENCE: In the case of a device that uses different power supplies for the internal
operation and external interface, as a rule, switch on the external power supply after switching on the internal
power supply. When switching the power supply off, as a rule, switch off the external power supply and then
the internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements
due to the passage of an abnormal current. The correct power on/off sequence must be judged separately
for each device and according to related specifications governing the device.
(6) INPUT OF SIGNAL DURING POWER OFF STATE : Do not input signals or an I/O pull-up power supply
while the device is not powered. The current injection that results from input of such a signal or I/O pull-up
power supply may cause malfunction and the abnormal current that passes in the device at this time may
cause degradation of internal elements. Input of signals during the power off state must be judged
separately for each device and according to related specifications governing the device.
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
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