R5F10Y47ASP#30

Datasheet RL78/G10 R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 RENESAS MCU True Low Power Platform (as low as 46 µA/MHz), 2.0 to 5.5V Operation, 1 to 4 Kbyte Flash for General Purpose Applications 1. OUTLINE 1.1 Features Ultra-Low Power Technology • 2.0 to 5.5 V operation from a single supply • Stop (RAM retained): 0.56 µA • Operating: 46 µA /MHz Extended-Function Timers • Multi-function 16-bit timers: Up to 4 channels • Interval timer: 12-bit, 1 channel (only for 16-pin product) • 15 kHz watchdog timer : 1 channel RL78-S1 Core • Instruction execution: 78 % of instructions can be executed in 1 to 2 clock cycles • CISC architecture (Harvard) with 3-stage pipeline • Multiply: 8 x 8 to 16-bit result in 2 clock cycles • 16-bit barrel shifter for shift & rotate in 2 clock cycle • 1-wire on-chip debug function Rich Analog • ADC: Up to 8 channels, 10-bit resolution, 3.4 µs conversion time • Supports 2.4 V • 1 x comparator (only for 16-pin product) Main Flash Memory • Density: 1 to 4 Kbyte • Flash memory rewritable voltage: 4.5 to 5.5 V RAM • 128 to 512 Byte size options • Supports operands or instructions • Back-up retention in all modes High-speed On-chip Oscillator • 20 MHz with +/-2 % accuracy over voltage (2.0 to 5.5 V) and temperature (-20 to +85°C) • Pre-configured settings: 20 MHz, 10 MHz, 5 MHz, 2.5 MHz, and 1.25 MHz Reset and Supply Management • Selectable power-on reset (SPOR) generator with 4 setting options Safety Features • Detects execution of illegal instruction • Detects watchdog timer program loop General Purpose I/O • High-current (up to 20 mA per pin) • Open-drain, internal pull-up support External Interrupt • External interrupt input: 4 • Key interrupt input: 6 Operating Ambient Temperature • Standard: -40 to +85°C Package Type and Pin Count • SSOP: 10 and 16 pin Multiple Communication Interfaces • 1 x I2C master 2 • 1 x I C multi-master (only for 16-pin product) • 1 x UART (7-, 8-bit) • Up to 2 x CSI/SPI (7-, 8-bit) * There is difference in specifications between every product. Please refer to specification for details. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 1 of 28 RL78/G10 CHAPTER 1 OUTLINE  ROM, RAM capacities Flash ROM RAM 10 pins 4 KB 512 B − R5F10Y47ASP Note 2 2 KB 256 B R5F10Y16ASP R5F10Y46ASP Note 2 1 KB 128 B R5F10Y14ASP R5F10Y44ASP Note 2 Notes 1. 16-pin products only 2. Under development Remark 16 pins The functions mounted depend on the product. See 1.6 Outline of Functions. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 2 of 28 RL78/G10 CHAPTER 1 OUTLINE 1.2 List of Part Number Figure 1-1. Classification of Part Number Part No. R 5 F 1 0 Y 1 7 A x x x S P #V0 Packaging style #V0 : Tray #X0 : Embossed Tape Package type: SP : SSOP, 0.65 mm pitch ROM number (Omitted with blank products) Classification: A : Consumer applications, operating ambient temperature : -40 C to 85 C ROM capacity: 4 : 1 KB 6 : 2 KB 7 : 4 KB Pin count: 1 : 10-pin 4 : 16-pin RL78/G10 group: 10Y Memory type: F : Flash memory Renesas MCU Renesas semiconductor product Pin count 10 pins 16 pins Package Part Number 10-pin plastic LSSOP R5F10Y16ASP#V0, R5F10Y16ASP#X0 (4.4 × 3.6 mm, 0.65mmpitch) R5F10Y14ASP#V0, R5F10Y14ASP#X0 16-pin plastic SSOP R5F10Y47ASP Note (4.4 × 5.0 mm, 0.65mmpitch) R5F10Y46ASP Note R5F10Y44ASP Note Note Under development Caution The part number represents the number at the time of publication. Be sure to review the latest part number through the target product page in the Renesas Electronics Corp.website. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 3 of 28 RL78/G10 CHAPTER 1 OUTLINE 1.3 Pin Configuration (Top View) 1.3.1 10-pin products • 10-pin plastic LSSOP (4.4 × 3.6) P40/KR0/TOOL0/(PCLBUZ0)/(TI01/TO01) P125/KR1/RESET P137/TI00/INTP0 VSS VDD 1 2 3 4 5 10 9 8 7 6 P04/ANI3/TI01/TO01/KR5 P03/ANI2/TO00/KR4/(INTP1) P02/ANI1/SCK00/SCL00/PCLBUZ0/KR3 P01/ANI0/SI00/RXD0/SDA00/KR2 P00/SO00/TXD0/INTP1 Remarks 1. For pin identification, see 1.4 Pin Identification. 2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection register (PIOR). 1.3.2 16-pin products • 16-pin plastic SSOP (4.4 × 5.0) P41/TI03/INTP2 1 16 P07/SDAA0/TO03/ANI6/SCK01 P40/KR0/TOOL0/(PCLBUZ0)/(TI01/TO01) P125/KR1/RESET 2 3 15 14 P06/SCLA0/INTP3/ANI5/SI01 P05/ANI4/TI02/TO02/SO01 P137/TI00/INTP0 4 5 6 13 12 11 P04/ANI3/TI01/TO01/KR5/IVREF0 P03/ANI2/TO00/KR4/(INTP1)/IVCMP0 7 8 10 9 P01/ANI0/SI00/RXD0/SDA00/KR2 P00/SO00/TXD0/INTP1 P122/X2/EXCLK/(INTP2) P121/X1/(INTP3) VSS VDD P02/ANI1/SCK00/SCL00/PCLBUZ0/KR3/VCOUT0 Remarks 1. For pin identification, see 1.4 Pin Identification. 2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection register (PIOR). R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 4 of 28 RL78/G10 CHAPTER 1 OUTLINE 1.4 Pin Identification ANI0 to ANI6 : Analog Input INTP0 to INTP3 : External Interrupt Input KR0 to KR5 : Key Return P00 to P07 : Port 0 P40, P41 : Port 4 P121, P122, P125 : Port 12 P137 : Port 13 PCLBUZ0 : Programmable Clock Output/ Buzzer Output EXCLK : External Clock Input X1, X2 : Crystal Oscillator IVCMP0 : Comparator Input VCOUT0 : Comparator Output IVREF0 : Comparator Reference Input RESET : Reset RxD0 : Receive Data SCK00, SCK01 : Serial Clock Input/Output SCL00, SCLA0 : Serial Clock Output SDA00, SDAA0 : Serial Data Input/Output SI00, SI01 : Serial Data Input SO00, SO01 : Serial Data Output TI00 to TI03 : Timer Input TO00 to TO03 : Timer Output TOOL0 : Data Input/Output for Tool TxD0 : Transmit Data VDD : Power Supply VSS : Ground R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 5 of 28 RL78/G10 CHAPTER 1 OUTLINE 1.5 Block Diagram 1.5.1 10-pin products PORT 0 5 P00 to P04 TAU0 (2 ch) TI00 /TO00 ch00 TI01 /TO01 ch01 SAU0 (1 ch) RxD0 TxD0 UART0 SCK00 SI00 SO00 CSI00 SCL00 SDA00 IIC00 TOOL0 PORT 4 P40 PORT 12 P125 PORT 13 P137 Code flash: 2 KB Buzzer/clock output control Interrupt control PCLBUZ0 Key return 6 ch 6 KR0 to KR5 Interrupt control 2 ch 2 INTP0, INTP1 RL78-S1 RAM 256 B 8-/10-bit A/D converter 4 ch ANI0 to ANI3 Watchdog timer Low-speed on-chip oscillator On-chip debugger Clock generator + Reset generator BCD adjustment Selectable power-onreset Low-speed on-chip oscillator 15 kHz VDD R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 RESET High-speed on-chip oscillator 1.25 to 20 MHz VSS Page 6 of 28 RL78/G10 CHAPTER 1 OUTLINE 1.5.2 16-pin products TAU0 (4 ch) TI00 / TO00 ch00 TI01 / TO01 ch01 TI02 / TO02 ch02 TI03 / TO03 ch03 PORT 0 8 P00 to P07 PORT 4 2 P40, P41 PORT 12 3 P121, P122, P125 PORT 13 SAU0 (1 ch) RxD0 TxD0 UART0 SCK00 SI00 SO00 CSI00 SCK01 SI01 SO01 CSI01 SCL00 SDA00 IIC00 Code flash: 4 KB Buzzer/clock output control Interrupt control RL78-S1 RAM 512 B On-chip TOOL0 RESET Clock generator + Reset generator On-chip debugger Main OSC 1 to 20 MHz BCD adjustment SCLA0 SDAA0 IICA0 PCLBUZ0 Key return 6 ch 6 KR0 to KR5 Interrupt control 4 ch 4 INTP0 to INTP3 8-/10-bit A/D converter 8 ch Watchdog timer 12-bit interval timer ANI0 to ANI6 Low-speed on-chip oscillator X1 X2/EXCLK Selectable power-onreset Low-speed on-chip oscillator 15 kHz VDD IVREF0 IVCMP0 VCOUT0 P137 High-speed on-chip oscillator 1.25 to 20 MHz VSS COMP R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 7 of 28 RL78/G10 CHAPTER 1 OUTLINE 1.6 Outline of Functions This outline describes the function at the time when Peripheral I/O redirection register (PIOR) is set to 00H. Item 10-pin R5F10Y16ASP 16-pin R5F10Y14ASP R5F10Y47ASP R5F10Y46ASP R5F10Y44ASP Code flash memory 2 KB 1 KB 4 KB 2 KB 1 KB RAM 256 B 128 B 512 B 256 B 128 B Main High-speed system system clock X1, X2 (crystal/ceramic) oscillation, external — main system clock input (EXCLK): clock 1 to 20 MHz: VDD = 2.7 to 5.5 V 1 to 5 MHz: VDD = 2.0 to 5.5 V High-speed on-chip • 1.25 to 20 MHz (VDD = 2.7 to 5.5 V) oscillator clock • 1.25 to 5 MHz (VDD = 2.0 to 5.5 V) Low-speed on-chip oscillator clock 15 kHz (TYP) General-purpose register 8-bit register × 8 Minimum instruction execution time 0.05 μs (20 MHz operation) Instruction set • Data transfer (8 bits) • Adder and subtractor/logical operation (8 bits) • Multiplication (8 bits × 8 bits) • Rotate, barrel shift, and bit manipulation (set, reset, test, and Boolean operation), etc. I/O port Timer Total 8 14 CMOS I/O 6 (N-ch open-drain output (VDD tolerance): 2) 10 (N-ch open-drain output (VDD tolerance): 4) CMOS input 2 4 16-bit timer 2 channels 4 channels Watchdog timer 1 channel 12-bit interval timer — 1 channel Timer output 2 channels (PWM output: 1) 4 channels (PWM outputs: 3 Clock output/buzzer output Note 1 ) 1 2.44 kHz to 10 MHz: (Peripheral hardware clock: fMAIN = 20 MHz operation) Comparator — 1 8-/10-bit resolution A/D converter 4 channels Serial interface [10-pin products] CSI: 1 channel/simplified I C: 1 channel/UART: 1 channel 8 channels 2 2 [16-pin products] CSI: 2 channels/simplified I C: 1 channel/UART: 1 channel 2 I C bus Vectored interrupt sources — 1 channel Internal 8 14 External 3 5 Key interrupt 6 Reset • • • • • Reset by RESET pin Internal reset by watchdog timer Internal reset by selectable power-on-reset Note 2 Internal reset by illegal instruction execution Internal reset by data retention lower limit voltage Selectable power-on-reset circuit Detection voltage: 2.0 V/2.4 V/2.7 V/4.0 V On-chip debug function Provided Power supply voltage VDD = 2.0 to 5.5 V Operating ambient temperature TA = - 40 to + 85 °C R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 8 of 28 RL78/G10 CHAPTER 1 OUTLINE Notes 1. The number of outputs varies, depending on the setting of channels in use and the number of the master 2. The illegal instruction is generated when instruction code FFH is executed. Reset by the illegal instruction (see 6.8.3 Operation as multiple PWM output function in the RL78/G10 User’s Manual). execution not issued by emulation with the on-chip debug emulator. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 9 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2. ELECTRICAL SPECIFICATIONS Cautions 1. This chapter explains the electrical specifications of two products, the R5F10Y16ASP and the R5F10Y14ASP. 2. Electrical specifications for the 16-pin products are T. B. D. because these products are under development. 3. The RL78/G10 has an on-chip debug function, which is provided for development and evaluation. Do not use the on-chip debug function in products designated for mass production, because the guaranteed number of rewritable times of the flash memory may be exceeded when this function is used, and product reliability therefore cannot be guaranteed. Renesas Electronics is not liable for problems occurring when the on-chip debug function is used. 4. The pins mounted depend on the product. Refer to 2.1 Port Functions and 2.2.1 Functions for each product in the RL78/G10 User’s Manual. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 10 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2.1 Absolute Maximum Ratings (TA = 25°C) Parameter Supply Voltage Symbols Conditions Ratings −0.5 to +6.5 VDD Input Voltage VI1 Output Voltage VO1 Output current, high IOH1 Output current, low Operating ambient Unit V −0.3 to VDD + 0.3 Per pin IOL1 Note V −0.3 to VDD + 0.3 V −40 mA Total of all pins P40 −40 mA -140 mA P00 to P04 −100 mA 40 mA Per pin Total of all pins P40 40 mA 140 mA P00 to P04 100 mA TA −40 to +85 °C Tstg −65 to +150 °C temperature Storage temperature Note Must be 6.5 V or lower. Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. Remarks 1. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. 2. The reference voltage is VSS. 2.2 Oscillator Characteristics 2.2.1 On-chip oscillator characteristics (TA = −40 to +85°C, 2.0 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Oscillators High-speed on-chip oscillator oscillation clock frequency Parameters Conditions fIH MIN. TYP. MAX. Unit 1.25 20 MHz Notes 1, 2 High-speed on-chip oscillator oscillation TA = -20 to +85°C -2.0 +2.0 % clock frequency accuracy TA = -40 to -20°C -3.0 +3.0 % Low-speed on-chip oscillator oscillation clock frequency fIL 15 kHz Note 3 Low-speed on-chip oscillator oscillation -15 +15 % clock frequency accuracy Notes 1. High-speed on-chip oscillator frequency is selected by bits 0 to 2 of option byte (000C2H). 2. This only indicates the oscillator characteristics. Refer to AC Characteristics for instruction execution time. 3. This only indicates the oscillator characteristics. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 11 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2.3 DC Characteristics 2.3.1 Pin characteristics (TA = −40 to +85°C, 2.0 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol IOH1 Output current, high MIN. Conditions P00, P01, P02 to P04, P40 Per pin Note 1 P40 Total P00, P01, P02 to P04 TYP. Total Note 3 Note 3 -10.0 IOL1 P00 to P04, P40 P40 Total P00 to P04 Total Note 3 Note 3 mA mA 2.7 V ≤ VDD < 4.0 V -2.0 mA 2.0 V ≤ VDD < 2.7 V -1.5 mA 4.0 V ≤ VDD ≤ 5.5 V -50.0 mA 2.7 V ≤ VDD < 4.0 V -10.0 mA 2.0 V ≤ VDD < 2.7 V -7.5 mA -60.0 mA Per pin Note 4 Unit -10.0 Total of all pins low Note 2 4.0 V ≤ VDD ≤ 5.5 V Note 3 Output current, MAX. 20.0 Note 2 mA 4.0 V ≤ VDD ≤ 5.5 V 20.0 mA 2.7 V ≤ VDD < 4.0 V 3.0 mA 2.0 V ≤ VDD < 2.7 V 0.6 mA 4.0 V ≤ VDD ≤ 5.5 V 80.0 mA 2.7 V ≤ VDD < 4.0 V 12.0 mA 2.0 V ≤ VDD < 2.7 V 2.4 mA 100.0 mA Note 3 Total of all pins Input voltage, high VIH1 0.8 VDD VDD V Input voltage, low VIL1 0 0.2 VDD V Output voltage, high VOH1 4.0 V ≤ VDD ≤ 5.5 V IOH =-10 mA VDD-1.5 V IOH =-3.0 mA VDD-0.7 V 2.7 V ≤ VDD ≤ 5.5 V IOH =-2.0 mA VDD-0.6 V 2.0 V ≤ VDD ≤ 5.5 V IOH =-1.5 mA VDD-0.5 4.0 V ≤ VDD ≤ 5.5 V IOL = 20 mA 1.3 V IOL = 8.5 mA 0.7 V IOL = 3.0 mA 0.6 V IOL = 1.5 mA 0.4 V IOL = 0.6 mA 0.4 V Note 5 Output voltage, low VOL1 V Note 6 2.7 V ≤ VDD ≤ 5.5 V 2.0 V ≤ VDD ≤ 5.5 V Input leakage ILIH1 VI = VDD 1 µA ILIL1 VI = VSS -1 µA RU VI = VSS 100 kΩ current, high Input leakage current,low On-chip pull-up 10 20 resistance Notes 1. Value of current at which the device operation is guaranteed even if the current flows from the VDD pin to an output pin. 2. Do not exceed the total current value. 3. This is the output current value under conditions where the duty factor ≤ 70%. The output current value when the duty factor > 70% can be calculated with the following expression (when changing the duty factor to n%). R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 12 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS • Total output current of pins = (IOH × 0.7)/(n × 0.01) Where n = 80 % and IOH = - 10.0 mA Total output current of pins = (- 10.0 × 0.7)/(80 × 0.01) ≅ - 8.7 mA • Total output current of pins = (IOL × 0.7)/(n × 0.01) Where n = 80 % and IOL = 10.0 mA Total output current of pins = (10.0 × 0.7)/(80 × 0.01) ≅ 8.7 mA However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A current higher than the absolute maximum rating must not flow into one pin. 4. Value of current at which the device operation is guaranteed even if the current flows from an output pin to the VSS pin. 5. The value under the condition which satisfies the high-level output current (IOH1). 6. The value under the condition which satisfies the low-level output current (IOL1). Cautions 1. 2. Remark P00 and P01 do not output high level in N-ch open-drain mode. The maximum value of VIH of P00 and P01 is VDD even in N-ch open-drain mode. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 13 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2.3.2 Supply current characteristics (TA = −40 to +85°C, 2.0 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Supply current Symbol Note 1 IDD1 Note 2 IDD2 Note 3 WDT supply current Conditions Operating Basic mode operation MIN. TYP. MAX. fIH = 20 MHz VDD = 3.0 V, 5.0 V 0.91 Normal fIH = 20 MHz VDD = 3.0 V, 5.0 V 1.57 2.04 operation fIH = 5 MHz VDD = 3.0 V, 5.0 V 0.85 1.15 fIH = 20 MHz VDD = 3.0 V, 5.0 V 350 820 fIH = 5 MHz VDD = 3.0 V, 5.0 V 290 600 0.56 2.00 HALT mode IDD3 STOP mode IWDT fIL = 15 kHz IADC During conversion at the VDD = 5.0 V 1.30 highest speed VDD = 3.0 V 0.50 VDD = 3.0 V Unit mA 0.31 µA µA µA Note 4 ADC supply current Note 5 Notes 1. 1.90 mA Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the watchdog timer, A/D converter, I/O port, and on-chip pull-up/pulldown resistors. 2. During HALT instruction execution by flash memory. 3. When the high-speed on-chip oscillator is stopped. 4. Current flowing only to the watchdog timer (including the operating current of the low-speed on-chip oscillator). The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3 and IWDT when the watchdog timer operates. 5. Current flowing only to the A/D converter. The current value of the RL78 microcontrollers is the sum of IDD1 or IDD2 and IADC when the A/D converter operates in an operation mode or the HALT mode. Remarks 1. fIL: Low-speed on-chip oscillator clock frequency 2. fIH: High-speed on-chip oscillator clock frequency 3. Temperature condition of the TYP. value is TA = 25°C R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 14 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2.4 AC Characteristics (TA = −40 to +85°C, 2.0 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Items Symbol Instruction cycle (minimum TCY instruction execution time) TI00, TI01 input high-level tTIH, tTIL MIN. Conditions PCLBUZ0 output frequency RESET low-level width MAX. Unit Main system clock 2.7 V ≤ VDD ≤ 5.5 V 0.05 0.8 µs (fMAIN) operation 2.0 V ≤ VDD ≤ 5.5 V 0.2 0.8 µs 1/fMCK + Noise filter is not used width, low-level width TO00, TO01 output frequency TYP. ns 10 fTO fPCL 4.0 V ≤ VDD ≤ 5.5 V 10 MHz 2.7 V ≤ VDD < 4.0 V 5 MHz 2.0 V ≤ VDD < 2.7 V 2.5 MHz 4.0 V ≤ VDD ≤ 5.5 V 10 MHz 2.7 V ≤ VDD < 4.0 V 5 MHz 2.0 V ≤ VDD < 2.7 V 2.5 MHz tRSL 10 µs Remark fMCK: Timer array unit operation clock frequency AC Timing Test Points VIH/VOH VIL/VOL VIH/VOH Test points VIL/VOL TI/TO Timing tTIH tTIL TI00, TI01 1/fTO TO00, TO01 R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 15 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS Interrupt Request Input Timing tINTH tINTL INTP0, INTP1 Key Interrupt Input Timing tKR KR0 to KR5 RESET Input Timing tRSL RESET R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 16 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2.5 Serial Communication Characteristics 2.5.1 Serial array unit (1) UART mode (TA = −40 to +85°C, 2.0 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. Transfer rate Theoretical value of the MAX. Unit fMCK/6 bps 3.3 Mbps maximum transfer rate fCLK = fMCK = 20 MHz UART mode connection diagram Rx TxD0 RL78 microcontroller User’s device Tx RxD0 UART mode bit width (reference) 1/transfer rate High-/low-bit width Baud rate error tolerance TxD0 RxD0 Remark fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00)) R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 17 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS (2) CSI mode (master mode, SCKp... internal clock output) (TA = −40 to +85°C, 2.0 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions 2.7 V ≤ VDD ≤ 5.5 V MIN. TYP. MAX. Unit SCKp cycle time tKCY1 tKCY1 ≥ 4/fCLK SCKp high-/low-level width tKH1, tKL1 2.7 V ≤ VDD ≤ 5.5 V 2.0 V ≤ VDD ≤ 5.5 V tKCY1/2-50 ns 2.7 V ≤ VDD ≤ 5.5 V 47 ns 2.0 V ≤ VDD ≤ 5.5 V 110 ns 19 ns 2.0 V ≤ VDD ≤ 5.5 V SIp setup time (to SCKp↑) Note 1 SIp hold time (from SCKp↑) Note 2 Delay time from SCKp↓ to SOp output tSIK1 tKSI1 tKSO1 C = 30 pF 200 ns 800 ns tKCY1/2-18 ns Note 4 25 ns Note 3 Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 4. C is the load capacitance of the SCKp and SOp output lines. Remarks 1. p: CSI number (p = 00), m: Unit number (m = 0), n: Channel number (n = 0) 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00)) R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 18 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS (3) CSI mode (slave mode, SCKp... external clock input) (TA = −40 to +85°C, 2.0 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol SCKp cycle time tKCY2 SCKp high-/low-level width tKH2, Conditions 2.7 V ≤ VDD ≤ 5.5 V MIN. TYP. MAX. Unit fMCK = 20 MHz 8/fMCK ns fMCK ≤ 10 MHz 6/fMCK ns 2.0 V ≤ VDD < 2.7 V 6/fMCK ns 2.0 V ≤ VDD ≤ 5.5 V tKCY2/2 ns 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + ns tKL2 Note 1 SIp setup time (to SCKp↑) tSIK2 20 2.0 V ≤ VDD < 2.7 V 1/fMCK + ns 30 SIp hold time (from SCKp↑) Note 2 tKSI2 2.0 V ≤ VDD ≤ 5.5 V 1/fMCK + ns 31 Delay time from SCKp↓ to SOp output tKSO2 C = 30 pF Note 4 Note 3 2.7 V ≤ VDD ≤ 5.5 2/fMCK + 50 ns 2/fMCK + 110 ns V 2.0 V ≤ VDD < 2.7 V Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 4. C is the load capacitance of the SOp output lines. Remarks 1. p: CSI number (p = 00), m: Unit number (m = 0), n: Channel number (n = 0) 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00)) R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 19 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS CSI mode connection diagram SCK SCK00 RL78 microcontroller SI00 SO User’s device SO00 SI CSI mode serial transfer timing (When DAP00 = 0 and CKP00 = 0, or DAP00 = 1 and CKP00 = 1.) tKCY1, 2 tKL1, 2 tKH1, 2 SCK00 tSIK1, 2 SI00 tKSI1, 2 Input data tKSO1, 2 SO00 R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Output data Page 20 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2 (4) Simplified I C mode (TA = −40 to +85°C, 2.0 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter SCLr clock frequency Symbol fSCL Conditions MIN. 2.0 V ≤ VDD ≤ 5.5 V, MAX. 400 Note 1 Unit kHz Cb = 100 pF, Rb = 3 kΩ Hold time when SCLr = "L" tLOW 2.0 V ≤ VDD ≤ 5.5 V, 1150 ns 1150 ns 2.0 V ≤ VDD ≤ 5.5 V, 1/fMCK + ns Cb = 100 pF, Rb = 3 kΩ 145 Cb = 100 pF, Rb = 3 kΩ Hold time when SCLr = "H" tHIGH 2.0 V ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ Data setup time (reception) Data hold time (transmission) tSU: DAT tHD: DAT 2.0 V ≤ VDD ≤ 5.5 V, Note 2 0 355 ns Cb = 100 pF, Rb = 3 kΩ Notes 1. 2. The value must also be equal to or less than fMCK/4. Set the fMCK value to keep the hold time of SCLr = "L" and SCLr = "H". Caution Select the N-ch open drain output (VDD tolerance) mode for the SDAr pin by using the port output mode register 0 (POM0). Remarks 1. Rb [Ω]: Communication line (SDAr) pull-up resistance, Cb [F]: Communication line (SCLr, SDAr) load capacitance 2. r: IIC number (r = 00) 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00)) R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 21 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2 Simplified I C mode connection diagram VDD Rb SDA SDA00 RL78 microcontroller User’s device SCL SCL00 2 Simplified I C mode serial transfer timing 1/fSCL tLOW tHIGH SCL00 SDA00 tHD : DAT R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 tSU : DAT Page 22 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2.6 Analog Characteristics 2.6.1 A/D converter characteristics (Target ANI pin : ANI0 to ANI3) (TA = −40 to +85°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Resolution Conditions RES Note 1 Overall error Zero-scale error Full-scale error EFS Note 1 Differential linearity error Note 1 Analog input voltage Notes 1. 2. 10-bit resolution 10-bit resolution ILE 10-bit resolution DLE 10-bit resolution MAX. Unit 10 bit VDD = 5 V ±1.7 ±3.1 Note 2 VDD = 3 V ±2.3 ±4.5 Note 2 10-bit resolution EZS Note 1 Integral linearity error 10-bit resolution tCONV Note 1 TYP. 8 AINL Conversion time MIN. LSB LSB 2.7 V ≤ VDD ≤ 5.5 V 3.4 18.4 µs 2.4 V ≤ VDD ≤ 5.5 V 4.6 18.4 µs VDD = 5 V ±0.19 Note 2 VDD = 3 V ±0.39 Note 2 %FSR VDD = 5 V ±0.29 Note 2 %FSR VDD = 3 V ±0.42 Note 2 %FSR VDD = 5 V %FSR ±1.8 Note 2 LSB VDD = 3 V ±1.7 Note 2 LSB VDD = 5 V ±1.4 Note 2 LSB VDD = 3 V ±1.5 Note 2 LSB VAIN 0 VDD V Excludes quantization error (±1/2 LSB). This is the characteristic evaluation value plus or minus 3. These values are not used in the shipping inspection. 2.6.2 SPOR circuit characteristics (TA = −40 to +85°C, VSS = 0 V) Parameter Symbol Detection supply voltage VSPOR0 VSPOR1 VSPOR2 VSPOR3 Minimum pulse width Note Note Conditions MIN. TYP. MAX. Unit Power supply rise time 4.08 4.28 4.45 V Power supply fall time 4.00 4.20 4.37 V Power supply rise time 2.76 2.90 3.02 V Power supply fall time 2.70 2.84 2.96 V Power supply rise time 2.44 2.57 2.68 V Power supply fall time 2.40 2.52 2.62 V Power supply rise time 2.05 2.16 2.25 V Power supply fall time 2.00 2.11 2.20 V TSPW 300 µs Time required for the reset operation by the SPOR when VDD becomes under VSPDR. 2.6.3 Power supply voltage rising slope characteristics (TA = −40 to +85°C, VSS = 0 V) Parameter Power supply voltage rising slope R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Symbol SVDD Conditions MIN. TYP. MAX. Unit 54 V/ms Page 23 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2.6.4 Data retention power supply voltage characteristics (TA = −40 to +85°C, Vss = 0 V) Parameter Data retention power supply voltage Symbol VDDDR Conditions MIN. 1.9 TYP. MAX. Unit 5.5 V range Caution Data is retained until the power supply voltage becomes under the minimum value of the data retention power supply voltage range. Note that data in the RAM and RESF registers might not be cleared even if the power supply voltage becomes under the minimum value of the data retention power supply voltage range. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 24 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2.7 Flash Memory Programming Characteristics (TA = 0 to + 40°C, 4.5 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Code flash memory rewritable times Notes 1. Symbol Cerwr Conditions Retained for 20 years. MIN. TA = + 85°C TYP. MAX. 1000 Unit Times Notes 1, 2, 3 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite. 2. When using flash memory programmer. 3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics Corporation. 2.8 Dedicated Flash Memory Programmer Communication (UART) (TA = 0 to + 40°C, 4.5 V ≤ VDD ≤ 5.5V, VSS = 0 V) Parameter Symbol Conditions Transfer rate Remark MIN. TYP. 115,200 MAX. Unit bps The transfer rate during flash memory programming is fixed to 115,200 bps. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 25 of 28 RL78/G10 CHAPTER 2 ELECTRICAL SPECIFICATIONS 2.9 Timing of Entry to Flash Memory Programming Modes Parameter Symbol How long from when an external tSUINIT Conditions MIN. TYP. SPOR reset must end before the external MAX. Unit 100 ms reset ends. reset ends until the initial communication settings are specified How long from when the TOOL0 tSU SPOR reset must end before the external 10 μs 1 ms reset ends. pin is placed at the low level until an external reset ends How long the TOOL0 pin must be tHD SPOR reset must end before the external reset ends. kept at the low level after an external reset ends RESET tHD Mode setting one-byte data TOOL0 tSU tSUINIT The low level is input to the TOOL0 pin. The external reset ends (SPOR reset must end before the external reset ends.). The TOOL0 pin is set to the high level. Setting of entry to the flash memory programming mode by UART reception. Remark tSUINIT: The segment shows that it is necessary to finish specifying the initial communication settings within 100 ms from when the resets end. tSU: How long from when the TOOL0 pin is placed at the low level until an external reset ends (MIN. 10 μ s) tHD: How long to keep the TOOL0 pin at the low level from when the external reset ends R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 26 of 28 RL78/G10 CHAPTER 3 PACKAGE DRAWINGS 3. PACKAGE DRAWINGS 3.1 10-pin products R5F10Y16ASP, R5F10Y14ASP JEITA Package Code RENESAS Code Previous Code MASS (TYP.) [g] P-LSSOP10-4.4x3.6-0.65 PLSP0010JA-A P10MA-65-CAC-2 0.05 V detail of lead end 6 10 T I P 5 1 L U V A W W F H G J S E B C N S D M M NOTE Each lead centerline is located within 0.13 mm of its true position (T.P.) at maximum material condition. K (UNIT:mm) ITEM A B DIMENSIONS 3.60 ±0.10 0.50 C 0.65 (T.P.) D 0.24 ± 0.08 E 0.10 ± 0.05 F 1.45 MAX. G 1.20 ± 0.10 H I 6.40 ± 0.20 4.40 ± 0.10 L 1.00 ± 0.20 + 0.08 0.17 − 0.07 0.50 M 0.13 N 0.10 J K T +5 ° 3° 3 ° − 0.25 (T.P.) U 0.60 ± 0.15 P V 0.25 MAX. W 0.15 MAX. 2012 Renesas Electronics Corporation. All rights reserved. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 27 of 28 RL78/G10 CHAPTER 3 PACKAGE DRAWINGS 3.2 16-pin products R5F10Y47ASP, R5F10Y46ASP, R5F10Y44ASP JEITA Package Code RENESAS Code Previous Code MASS (TYP.) [g] P-SSOP16-4.4x5-0.65 PRSP0016JC-A P16MA-65-FAA-2 0.08 D1 D detail of lead end 9 16 A3 E 1 c 8 L Lp ZD bp x M S HE A A2 L1 S S (UNIT:mm) A1 y S e ITEM DIMENSIONS D 5.00 ± 0.15 D1 5.20 ± 0.15 E 4.40 ± 0.20 HE 6.40 ± 0.20 A 1.725 MAX. A1 0.125 ± 0.05 A2 1.50 A3 0.25 e bp c 0.65 0.22 + 0.08 0.07 0.15 + 0.03 0.04 L 0.50 Lp 0.60 ± 0.10 L1 x y 1.00 ± 0.20 ZD 0.13 0.10 + 5° 3° 3° 0.325 2012 Renesas Electronics Corporation. All rights reserved. R01DS0207EJ0100 Rev.1.00 Apr 15, 2013 Page 28 of 28 Revision History RL78/G10 Data Sheet Rev. Date Page 1.00 Apr 15, 2013 - Description Summary First Edition issued All trademarks and registered trademarks are the property of their respective owners. SuperFlash is a registered trademark of Silicon Storage Technology, Inc. in several countries including the United States and Japan. Caution: This product uses SuperFlash® technology licensed from Silicon Storage Technology, Inc. C-1 NOTES FOR CMOS DEVICES (1) VOLTAGE APPLICATION WAVEFORM AT INPUT PIN: Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN). (2) HANDLING OF UNUSED INPUT PINS: Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must be judged separately for each device and according to related specifications governing the device. (3) PRECAUTION AGAINST ESD: A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors should be grounded. The operator should be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with mounted semiconductor devices. (4) STATUS BEFORE INITIALIZATION: Power-on does not necessarily define the initial status of a MOS device. Immediately after the power source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the reset signal is received. A reset operation must be executed immediately after power-on for devices with reset functions. (5) POWER ON/OFF SEQUENCE: In the case of a device that uses different power supplies for the internal operation and external interface, as a rule, switch on the external power supply after switching on the internal power supply. When switching the power supply off, as a rule, switch off the external power supply and then the internal power supply. Use of the reverse power on/off sequences may result in the application of an overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements due to the passage of an abnormal current. The correct power on/off sequence must be judged separately for each device and according to related specifications governing the device. (6) INPUT OF SIGNAL DURING POWER OFF STATE : Do not input signals or an I/O pull-up power supply while the device is not powered. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Input of signals during the power off state must be judged separately for each device and according to related specifications governing the device. Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. SALES OFFICES http://www.renesas.com Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2013 Renesas Electronics Corporation. All rights reserved. Colophon 2.2