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R5F11NMEAFB#30

R5F11NMEAFB#30

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    LQFP80

  • 描述:

  • 数据手册
  • 价格&库存
R5F11NMEAFB#30 数据手册
Datasheet RL78/H1D R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 RENESAS MCU Analog front-end (24-bit ΔΣA/D converter with programmable gain instrumentation amplifier, Amplifier unit and 12-bit D/A converter), External signal sampler/Sampling output timer detector and Integrated LCD controller/driver. True Low Power Platform (as low as 70.8 μA/MHz, and 0.68 μA in Halt mode( RTC2 + LVD)), 1.8 V to 5.5V operation, 64 to 128 Kbyte Flash, 33 DMIPS at 24 MHz, for Healthcare and Flow meter applications. 1. OUTLINE 1.1 Features Ultra-low power consumption technology can be executed from the program memory • VDD = 2.4 to 5.5 V (10-bit SAR A/D converter: 2.4 to 5.5 V, operating voltage of the analog front-end (AFE): 2.7 to 5.5 V) • Background operation (BGO): Instructions Note 1, VDD = 1.8 to 5.5 VNote 2 • HALT mode • STOP mode • SNOOZE mode RL78 CPU core • CISC architecture with 3-stage pipeline • Minimum instruction execution time: Can be changed from high speed (0.04167 µs: @ 24 while rewriting the data flash memory. • Number of rewrites: 1,000,000 times (TYP.) • Voltage of rewrites: VDD = 2.4 to 5.5 VNote 1, 1.8 to 5.5 VNote 2 High-speed on-chip oscillator • Select from 24 MHz, 16 MHz, 12 MHz, 8 MHz, 6 MHz, 4 MHz, 3 MHz, 2 MHz, and 1 MHz • High accuracy: ±1.0% (VDD = 2.4 to 5.5 V, TA = -20 to +85°CNote 1, VDD = 1.8 to 5.5 V, TA = -20 to +85°CNote 2) MHz operation with high-speed on-chip oscillator clock) to ultra-low speed (30.5 µs: @ 32.768 kHz operation with subsystem clock) • Multiply/divide and multiply/accumulate Operating ambient temperature • TA = -40 to +85°C (A: Consumer applicationsNote 1, D: Industrial applicationsNote 2) instructions are supported. • Address space: 1 MB • General-purpose registers: (8-bit register × 8) × 4 banks • On-chip RAM: 5.5 KBNote 1, 8 KBNote 2 Power management and reset function • On-chip power-on-reset (POR) circuit • On-chip voltage detector (LVD) (Select interrupt and reset from 9Note 1 or 12Note 2 levels) Code flash memory • Code flash memory: 64 to 128 KB • Block size: 1 KB • Prohibition of block erase and rewriting (security function) • On-chip debug function • Self-programming (with boot swap Data transfer controller (DTC) • Transfer modes: Normal transfer mode, repeat transfer mode, block transfer mode • Activation sources: Activated by interrupt sources (35 sources). • Chain transfer function function/flash shield window function) Event link controller (ELC) Data flash memory • Data flash memory: 4 KB R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 • Event signals of 18 to 26 types can be linked to the specified peripheral function. Page 1 of 143 RL78/H1D 1. OUTLINE Serial interfaces • CSI/CSI (SPI supported): 3 channels • UART/UART (LIN-bus supported):3 channels • I2C/simplified I2C: 4 channels • Serial interface UARTMG (9600 bps @ 38.4 kHz): 1 channel (R5F11R only) Timers • 16-bit timer: Timer array unit (TAU): 8 channels, Timer RJ: 2 channels (R5F11R only) • 8-bit timer:2 channelsNote 1, 6 channelsNote 2 • 12-bit interval timer: 1 channel • Real-time clock 2: 1 channel (calendar for 99 years, alarm function, and clock correction function) • Watchdog timer: 1 channel (operable with the dedicated low-speed on-chip oscillator) • External signal sampler: 1 channel (R5F11R only) • Sampling output timer detector (SMOTD): 6 channels for input, 3 channels for output (R5F11R only) LCD controller/driver • Internal voltage boosting method, capacitor split method, and external resistance division method are switchable. • Segment signal output: 27 (23) to 36 (32) Note 3 • Common signal output: 4 (8) Amplifier unit (R5F11N and R5F11P only) • Programmable gain instrumentation amplifier (PGA1): 1 channel (R5F11NL, R5F11PL, and R5F11NG only) - Analog input: 1 or 2 channels - Variable gain: x12, x16, x20, x24 • Rail-to-rail operational amplifier (AMP0): 1 channel • General-purpose operational amplifier (AMP1, AMP2): 2 channels (R5F11NL, R5F11PL, and R5F11NG only) D/A converter (R5F11N and R5F11P only) • 8-bit resolution R-2R resistor ladder D/A converter (DAC0) (AVDD = 2.7 to 5.5 V): 1 channel • 12-bit resolution R-2R resistor ladder D/A converter (DAC1) (AVDD = 2.7 to 5.5 V): 1 channel (R5F11NL, R5F11PL, and R5F11NG only) 10-bit SAR A/D converter • 10-bit resolution A/D converter (VDD = 2.4 to 5.5 VNote 1, VDD = 1.8 to 5.5 VNote 2) • Analog input: 3 channels • Internal reference voltage (TYP. 1.45 V) Note 4 and temperature sensor Note 4 Note 3 Analog front-end power supply circuit (R5F11N and R5F11P only) • AFE reference power supply (ABGR) • LDO for supplying power to internal circuits (REGA) • LDO for supplying power to a sensor (SBIAS): 0.5 to 2.2 V 24-bit ΔΣ A/D converter with programmable gain instrumentation amplifier (R5F11N and R5F11P only) • 24-bit second-order ΔΣ A/D converter (AVDD = 2.7 to 5.5 V) - SNDR: 85 dB (TYP.) - Output data rate: 488 sps to 15.625 ksps in normal mode 61 sps to 1.953 ksps in low power mode • Programmable gain instrumentation amplifier (PGA0) - Analog input: 1 to 5 channels (differential input mode or single-ended input mode) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 - D/A converter for offset adjustment - Variable gain: x1 to x64 I/O ports • I/O ports: 29 to 63 (N-ch open drain I/O [withstand voltage of 6 V]: 2) • Can be set to N-ch open drain, TTL input buffer, and on-chip pull-up resistor • On-chip clock output/buzzer output controller Others • On-chip BCD (binary-coded decimal) correction circuit Note 1. Note 2. Note 3. Note 4. Remark In case of R5F11N and R5F11P. In case of R5F11R. The number in parentheses indicates the number of signal outputs when 8 coms are used. Selectable only in HS (high-speed main) mode. The functions mounted depend on the product. See 1.6 Outline of Functions. Page 2 of 143 RL78/H1D 1. OUTLINE ROM, RAM capacities Flash ROM Data Flash RAM 128 KB 4 KB 96 KB RL78/H1D 80-pin LFQFP 64-pin LFQFP 64-pin TFBGA 48-pin LFQFP 5.5 KB R5F11NMG R5F11NLG R5F11PLG R5F11NGG 4 KB 5.5 KB R5F11NMF R5F11NLF R5F11PLF R5F11NGF 64 KB 4 KB 5.5 KB R5F11NME — — — 128 KB 4 KB 8 KB R5F11RMG — — — R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 3 of 143 RL78/H1D 1.2 Pin Count 80 pins 1. OUTLINE Ordering Information Package 80-pin plastic LFQFP Fields of Application A (12 × 12 mm, 0.5 mm pitch) 64 pins 64-pin plastic LFQFP 64-pin plastic TFBGA A 48-pin plastic LFQFP A 80-pin plastic LFQFP R5F11PLGABG#U0, R5F11PLFABG#U0 R5F11PLGABG#W0, R5F11PLFABG#W0 A (7 × 7 mm, 0.5 mm pitch) 80 pins R5F11NLGAFB#30, R5F11NLFAFB#30 R5F11NLGAFB#50, R5F11NLFAFB#50 (4 × 4 mm, 0.4 mm pitch) 48 pins R5F11NMGAFB#30, R5F11NMFAFB#30, R5F11NMEAFB#30 R5F11NMGAFB#50, R5F11NMFAFB#50, R5F11NMEAFB#50 (10 × 10 mm, 0.5 mm pitch) 64 pins Orderable Part Number R5F11NGGAFB#30, R5F11NGFAFB#30 R5F11NGGAFB#50, R5F11NGFAFB#50 D R5F11RMGDFB#30, R5F11RMGDFB#50 (12 × 12 mm, 0.5 mm pitch) Remark Products (R5F11PL) in 64-pin TFBGA have the same functionality as those (R5F11NG) in 48-pin LFQFP. The only difference is the package. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 4 of 143 RL78/H1D 1. OUTLINE Figure 1 - 1 Part Number, Memory Size, and Package of RL78/H1D Part No. R 5 F 1 1 N M G A x x x F B # 3 0 Packaging specification: #30: Tray (LFQFP) #50: Embossed Tape (LFQFP) #U0: Tray (TFBGA) #W0: Embossed Tape (TFBGA) Package type: FB: LFQFP, 0.50 mm pitch BG: TFBGA, 0.40 mm pitch ROM number (Omitted with blank products) Fields of application: A: Consumer applications, TA = -40 to +85°C D: Industrial applications, TA = -40 to +85°C ROM capacity: E: 64 KB F: 96 KB G: 128 KB Pin count: G: 48-pin L: 64-pin M: 80-pin RL78/H1D group 11N: AFE incorporated, LFQFP package 11P: AFE incorporated, TFBGA package 11R: External signal sampler and SMOTD incorporated Memory type: F: Flash memory Renesas MCU Renesas semiconductor product Caution Orderable part numbers are current as of when this manual was published. Please make sure to refer to the relevant product page on the Renesas website for the latest part numbers. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 5 of 143 RL78/H1D 1.3 1. OUTLINE Pin Configuration (Top View) 1.3.1 80-pin products (R5F11NM) COM5/SEG1 COM6/SEG2 COM7/SEG3 P53/(INTP0)/SEG4 P52/SCK10/SCL10/TI02/TO02/SEG5 P51/SI10/RxD1/SDA10/TI04/TO04/SEG6 P50/SO10/TxD1/TI03/TO03/SEG7 COM0 COM1 COM2 COM3 COM4/SEG0 P10/INTP2/SCK20/SCL20/SEG29 P07/SI20/RxD2/SDA20/TI05/TO05/SEG28 P06/SO20/TxD2/TI00/SEG27 P05/TI06/TO06/SEG26 P04/INTP6/(SCK10/SCL10)/SEG25 P03/(SI10/RxD1/SDA10)/TO00/SEG24 P02/(SO10/TxD1)/PCLBUZ0/SEG23 P01/(INTP5)/SEG22 • 80-pin plastic LFQFP (12 × 12 mm, 0.5 mm pitch) 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 P11/SEG30 P12/SEG31 P13/SEG32 P14/SEG33 P15/SEG34 P16/SEG35 P17/(TI07/TO07) P84/(TI05/TO05) P85/INTP7 P86/(INTP6) ANI12 ANI13 ANI14 AVSS AMP0O AMP0N/AMP0P AMP0P PGA00P PGA00N SBIAS 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 RL78/H1D (Top View) 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 P70/SEG8 P71/SEG9 P72/SEG10 P73/SEG11 P74/SEG12 P75/SEG13 P76/SEG14 P77/TI07/TO07/SEG15 P30/INTP3/RTC1HZ/SEG16 P31/TI01/TO01/SEG17 P32/INTP4/SSI00/SEG18 P35/SCK00/SCL00/SEG19 P36/SI00/RxD0/TOOLRxD/SDA00/PCLBUZ1/SEG20 P37/SO00/TxD0/TOOLTxD/SEG21 P125/(TI06/TO06)/VL3 VL4 VL2 VL1 P126/(TI05/TO05)/CAPL P127/(TI04/TO04)/CAPH RESET P124/XT2/EXCLKS P123/XT1 P137/INTP0/(SSI00) P122/X2/EXCLK/INTP5 P121/X1/INTP1 REGC VSS VDD P60/(INTP3)/SCLA0 P61/(INTP4)/SDAA0 REGA AVDD P80/(SO20/TxD2)/(TI02/TO02) P81/(SI20/RxD2/SDA20)/(TI00)/(TO00) P82/(INTP2)/(SCK20/SCL20)/(TI07/TO07) P83/(TI03/TO03)/(PCLBUZ1) P44/(SO00/TxD0) P43/(SI00/RxD0/SDA00)/(TI00)/(TO00) P40/TOOL0/(INTP1)/(SCK00/SCL00)/(TI01/TO01) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Caution 1. Connect the REGC pin to VSS pin via a capacitor (0.47 to 1 µF). Caution 2. Connect the REGA pin to AVSS pin via a capacitor (0.22 μF). Caution 3. Make the AVSS pin the same potential as the VSS pin. Caution 4. Make the AVDD pin the same potential as the VDD pin. Caution 5. Connect the SBIAS pin to AVSS pin via a capacitor (0.22 µF). Remark 1. For pin identification, see 1.4 Pin Identification. Remark 2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection registers 0 to 3 (PIOR0 to PIOR3). Remark 3. Set the AMP0P and AMP0N functions in the above figure by the amplifier unit 1 input select register (AMP0S). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 6 of 143 RL78/H1D 1.3.2 1. OUTLINE 64-pin products (R5F11NL) P10/INTP2/SCK20/SCL20/SEG29 P07/SI20/RxD2/SDA20/TI05/TO05/SEG28 P06/SO20/TxD2/TI00/SEG27 P05/ANI10/TI06/TO06/SEG26 P03/ANI8/TO00/SEG24 COM0 COM1 COM2 COM3 COM4/SEG0 COM5/SEG1 COM6/SEG2 COM7/SEG3 P52/SCK10/SCL10/TI02/TO02/SEG5 P51/SI10/RxD1/SDA10/TI04/TO04/SEG6 P50/SO10/TxD1/TI03/TO03/SEG7 • 64-pin plastic LFQFP (10 × 10 mm, 0.5 mm pitch) 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 49 32 50 31 51 30 52 29 53 28 54 27 55 26 56 25 57 24 58 23 59 22 60 21 61 20 62 19 63 18 64 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 RL78/H1D (Top View) P70/SEG8 P71/SEG9 P76/SEG14 P77/TI07/TO07/SEG15 P30/INTP3/RTC1HZ/SEG16 P31/TI01/TO01/SEG17 P32/INTP4/SSI00/SEG18 P35/SCK00/SCL00/SEG19 P36/SI00/RxD0/TOOLRxD/SDA00/PCLBUZ1/SEG20 P37/SO00/TxD0/TOOLTxD/SEG21 P125/(TI06/TO06)/VL3 VL4 VL2 VL1 P126/(TI05/TO05)/CAPL P127/(TI04/TO04)/CAPH REGA AVDD P82/(TI07/TO07) P83/(TI03/TO03)/(PCLBUZ1) P40/TOOL0/(INTP1)/(TI01/TO01) RESET P124/XT2/EXCLKS P123/XT1 P137/INTP0 P122/X2/EXCLK/INTP5 P121/X1/INTP1 REGC VSS VDD P60/(INTP3)/SCLA0 P61/(INTP4)/SDAA0 P11/ANI11/SEG30 P12/SEG31 P13/SEG32 P14/SEG33 P15/SEG34 AMP2O AMP2N/AMP2P/AMP1P AMP1O AMP1N/AMP1P/AMP0P PGA1O AVSS AMP0O AMP0N/AMP0P PGA10P/PGA00P/AMP1P PGA10N/PGA00N/AMP2P SBIAS Caution 1. Connect the REGC pin to VSS pin via a capacitor (0.47 to 1 µF). Caution 2. Connect the REGA pin to AVSS pin via a capacitor (0.22 μF). Caution 3. Make the AVSS pin the same potential as the VSS pin. Caution 4. Make the AVDD pin the same potential as the VDD pin. Caution 5. Connect the SBIAS pin to AVSS pin via a capacitor (0.22 µF). Remark 1. For pin identification, see 1.4 Pin Identification. Remark 2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection registers 0 to 3 (PIOR0 to PIOR3). Remark 3. Set the AMP0P and AMP0N functions in the above figure by the amplifier unit 1 input select register (AMP0S). Set the AMP1P and AMP1N functions in the above figure by the amplifier unit 2 input select register (AMP1S). Set the AMP2P and AMP2N functions in the above figure by the amplifier unit 3 input select register (AMP2S). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 7 of 143 RL78/H1D 1.3.3 1. OUTLINE 64-pin products (R5F11PL) • 64-pin plastic TFBGA (4 × 4 mm, 0.4 mm pitch) Top View Bottom View 8 7 6 5 4 3 2 1 A B C D E F G H H G F E D C B A INDEX MARK R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 8 of 143 RL78/H1D 1. OUTLINE A VSS B C D E F G P71/(TI05/ P77/TI07/ P35/SCK00/ P36/SI00/ P61/(INTP4)/ VDD TO05) TO07 SCL00 RxD0/ SDAA0 H VSS 8 TOOLRxD/ 8 SDA00/ PCLBUZ1 7 P50/SO10/ P51/SI10/Rx P76/(TI06/ P32/INTP4/ P37/SO00/ P60/(INTP3)/ VSS P121/X1/ TxD1/TI03/ D1/SDA10/ TO06) SSI00 TxD0/ SCLA0 INTP1 TO03 TI04/TO04 P53/(INTP0) 6 P52/SCK10/ P70 P30/INTP3/ SCL10/TI02/ VSS RESET REGC RTC1HZ P122/X2/ EXCLK/ TO02 5 7 TOOLTxD 6 INTP5 P02/(SO10/ P03/ANI8/ P04/ANI9/IN TxD1)/ (SI10/RxD1/ TP6/(SCK10/ (INTP1)/TI01 PCLBUZ0 SDA10)/ SCL10) /TO01 P01/(INTP5) P40/TOOL0/ VSS P137/INTP0 P123/XT1 5 TO00 4 P05/ANI10/ P07/SI20/ P06/SO20/ P10/INTP2/ TI06/TO06 RxD2/ TxD2/TI00 SCK20/ SDA20/ VSS VSS VSS P124/XT2/ EXCLKS SCL20 4 TI05/TO05 AMP1O AVSS AVSS AVSS AVSS AVSS REGA AVDD 3 3 AMP2O 2 AMP1N/ PGA11P/ PGA11N/ AMP0N/ AMP1P/ PGA01P PGA01N AMP0P PGA1O AVSS AMP0O AVSS AVSS SBIAS 2 AMP0P AVSS AMP2N/ 1 A PGA10P/ PGA10N/ AMP2P/ PGA00P/ PGA00N/ AMP1P AMP1P AMP2P F G B C D E SBIAS 1 H Caution 1. Connect the REGC pin to VSS pin via a capacitor (0.47 to 1 µF). Caution 2. Connect the REGA pin to AVSS pin via a capacitor (0.22 µF). Caution 3. Make the AVSS pin the same potential as the VSS pin. Caution 4. Make the AVDD pin the same potential as the VDD pin. Caution 5. Connect an SBIAS pin (either of two) to the AVSS pin via a capacitor (0.22 μF). Remark 1. For pin identification, see 1.4 Pin Identification. Remark 2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection registers 0, 1, and 3 (PIOR0, PIOR1, and PIOR3). Remark 3. Set the AMP0P and AMP0N functions in the above figure by the amplifier unit 1 input select register (AMP0S). Set the AMP1P and AMP1N functions in the above figure by the amplifier unit 2 input select register (AMP1S). Set the AMP2P and AMP2N functions in the above figure by the amplifier unit 3 input select register (AMP2S). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 9 of 143 RL78/H1D 1.3.4 1. OUTLINE 48-pin products (R5F11NG) SBIAS AMP1N/AMP1P/AMP0P PGA1O AVSS PGA11P/PGA01P PGA11N/PGA01N AMP0O AMP0N/AMP0P PGA10P/PGA00P/AMP1P PGA10N/PGA00N/AMP2P P51/SI10/RxD1/SDA10/TI04/TO04 P50/SO10/TxD1/TI03/TO03 P53/(INTP0) P52/SCK10/SCL10/TI02/TO02 P04/ANI9/INTP6/(SCK10/SCL10) P03/ANI8/(SI10/RxD1/SDA10)/TO00 P02/(SO10/TxD1)/PCLBUZ0 P01/(INTP5) 36 35 34 33 32 31 30 29 28 27 26 25 24 37 23 38 22 39 21 40 20 41 RL78/H1D 19 42 (Top View) 18 43 17 44 16 45 15 46 14 47 13 48 1 2 3 4 5 6 7 8 9 10 11 12 P70 P71/(TI05/TO05) P76/(TI06/TO06) P77/TI07/TO07 P30/INTP3/RTC1HZ P32/INTP4/SSI00 P35/SCK00/SCL00 P36/SI00/RxD0/TOOLRxD/SDA00/PCLBUZ1 P37/SO00/TxD0/TOOLTxD P61/(INTP4)/SDAA0 P60/(INTP3)/SCLA0 VDD REGA AVDD P40/TOOL0/(INTP1)/TI01/TO01 RESET P124/XT2/EXCLKS P123/XT1 P137/INTP0 P122/X2/EXCLK/INTP5 P121/X1/INTP1 REGC VSS AMP2O AMP2N/AMP2P/AMP1P AMP1O P07/SI20/RxD2/SDA20/TI05/TO05 P06/SO20/TxD2/TI00 P05/ANI10/TI06/TO06 P10/INTP2/SCK20/SCL20 • 48-pin plastic LFQFP (7 × 7 mm, 0.5 mm pitch) Caution 1. Connect the REGC pin to VSS pin via a capacitor (0.47 to 1 µF). Caution 2. Connect the REGA pin to AVSS pin via a capacitor (0.22 µF). Caution 3. Make the AVSS pin the same potential as the VSS pin. Caution 4. Make the AVDD pin the same potential as the VDD pin. Caution 5. Connect the SBIAS pin to AVSS pin via a capacitor (0.22 µF). Remark 1. For pin identification, see 1.4 Pin Identification. Remark 2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection registers 0, 1, and 3 (PIOR0, PIOR1, and PIOR3). Remark 3. Set the AMP0P and AMP0N functions in the above figure by the amplifier unit 1 input select register (AMP0S). Set the AMP1P and AMP1N functions in the above figure by the amplifier unit 2 input select register (AMP1S). Set the AMP2P and AMP2N functions in the above figure by the amplifier unit 3 input select register (AMP2S). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 10 of 143 RL78/H1D 1.3.5 1. OUTLINE 80-pin products (R5F11RM) COM5/SEG1 COM6/SEG2 COM7/SEG3 P53/SEG4 P52/SCK10/SCL10/TI02/TO02/SEG5 P51/SI10/RxD1/SDA10/TI04/TO04/SEG6 P50/SO10/TxD1/TI03/TO03/SEG7 COM0 COM1 COM2 COM3 COM4/SEG0 P10/SCK20/SCL20/SEG29 P07/SI20/RxD2/SDA20/TI05/TO05/SEG28 P06/SO20/TxD2/TI00/SEG27 P05/ANI10/TI06/TO06/SEG26 P04/ANI9/(SCK10/SCL10)/SEG25 P03/ANI8/(SI10/RxD1/SDA10)/TO00/SEG24 P02/(SO10/TxD1)/PCLBUZ0/SEG23 P01/SEG22 • 80-pin plastic LFQFP (12 × 12 mm, 0.5 mm pitch) 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 P11/SEG30 P12/TxDMG0/SEG31 P13/RxDMG0/SEG32 P14/TRJIO1/SEG33 P15/TRJIO0/SEG34 P16/SMO0/SEG35 P17/SMO1 P84/SMO2 P85/SMP0/EXSDI0 P86/SMP1/EXSDI1 P150/SMP2 P151/SMP3 P20/SMP4 AVSS P21/SMP5 P22/INTP7 P23/INTP6 P24/(INTP5) P25/INTP4 P26/INTP3 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 RL78/H1D (Top View) 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 P70/SEG8 P71/SEG9 P72/SEG10 P73/SEG11 P74/SEG12 P75/SEG13 P76/SEG14 P77/TI07/TO07/SEG15 P30/RTC1HZ/SEG16 P31/TI01/TO01/SEG17 P32/SSI00/SEG18 P35/SCK00/SCL00/SEG19 P36/SI00/RxD0/TOOLRxD/SDA00/PCLBUZ1/SEG20 P37/SO00/TxD0/TOOLTxD/SEG21 P125/(TI06/TO06)/VL3 VL4 VL2 VL1 P126/(TI05/TO05)/CAPL P127/(TI04/TO04)/CAPH P27/INTP2 AVDD P80/(SO20/TxD2)/(TI02/TO02)/TRJO0 P81/(SI20/RxD2/SDA20)/(TI00)/(TO00)/TRJO1 P82/(SCK20/SCL20)/(TI07/TO07)/EXSDO0 P83/(TI03/TO03)/EXSDO1/(PCLBUZ1) P44/(SO00/TxD0)/(SMP1) P43/(SI00/RxD0/SDA00)/(SMP0) P40/TOOL0/(SCK00/SCL00)/(TI01/TO01) RESET P124/XT2/EXCLKS P123/XT1 P137/INTP0/(SSI00) P122/X2/EXCLK/INTP5 P121/X1/INTP1 REGC VSS VDD P60/SCLA0 P61/SDAA0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Caution 1. Connect the REGC pin to VSS pin via a capacitor (0.47 to 1 µF). Caution 2. Make the AVSS pin the same potential as the VSS pin. Caution 3. Make the AVDD pin the same potential as the VDD pin. Remark 1. For pin identification, see 1.4 Pin Identification. Remark 2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection registers 0 to 3 (PIOR0 to PIOR3). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 11 of 143 RL78/H1D 1.4 1. OUTLINE Pin Identification AMP0N to AMP2N :OP AMP Negative Input AMP0P to AMP2P :OP AMP Positive Input REGA :Regulator Capacitance for Analog AMP0O to AMP2O :OP AMP Output REGC :Regulator Capacitance ANI8 to ANI14 :Analog Input SBIAS :Reference Voltage Output AVDD :Analog Power Supply RESET :Reset AVSS :Analog Ground RTC1HZ :Real-time Clock Correction CAPH, CAPL :Capacitor for LCD RxD0 to RxD2, RxDMG0 :Receive Data COM0 to COM7 :LCD Common Output SCK00, SCK10, SCK20, :Serial Clock Input/Output EXCLK :External Clock Input SCLA0 :Serial Clock Input/Output (Main System Clock) SCL00, SCL10, SCL20 :Serial Clock Output :External Clock Input SDAA0, SDA00, SDA10, :Serial Data Input/Output (Sub System Clock) SDA20 EXSDI0, EXSDI1 :External Sampling Input SEG0 to SEG35 :LCD Segment Output EXSDO0, EXSDO1 :External Sampling Clock SI00, SI10, SI20 :Serial Data Input SO00, SO10, SO20 :Serial Data Output INTP0 to INTP7 :External Interrupt Input SSI00 :Slave Select Input P01 to P07 :Port 0 SMP0 to SMP5 :Sampling Input P10 to P17 :Port 1 SMO0 to SMO2 :Sampling Clock Output P20 to P27 :Port 2 TI00 to TI07 :Timer Input P30 to P32, :Port 3 TO00 to TO07,TRJO0, TRJO1 :Timer Output TOOL0 :Data Input/Output for Tool TOOLRxD, TOOLTxD :Data Input/Output for EXCLKS Output P35 to P37 P40, P43, P44 :Port 4 P50 to P53 :Port 5 P60 to P61 :Port 6 TRJIO0, TRJIO1 :Timer Input/Output P70 to P77 :Port 7 TxD0 to TxD2, TxDMG0 :Transmit Data P80 to P86 :Port 8 VDD :Power Supply P121 to P127 :Port 12 VL1 to VL4 :LCD Power Supply P137 :Port 13 VSS :Ground P150, P151 :Port 15 X1, X2 :Crystal Oscillator PCLBUZ0, PCLBUZ1 :Programmable Clock Output/ PGA00N, PGA01N :PGA Negative Input Buzzer Output External Device (Main System Clock) XT1, XT2 :Crystal Oscillator (Subsystem Clock) PGA10N, PGA11N PGA00P, PGA01P :PGA Positive Input PGA10P, PGA11P PGA1O :PGA Output R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 12 of 143 RL78/H1D 1.5 1.5.1 1. OUTLINE Block Diagram 80-pin products (R5F11NM) TIMER ARRAY UNIT0 (8 ch) TI00 TO00 ch 0 TI01/TO01 ch 1 TI02/TO02 ch 2 TI03/TO03 ch 3 TI04/TO04 ch 4 TI05/TO05 ch 5 TI06/TO06 ch 6 TI07/TO07 ch 7 DATA FLASH MEMORY CODE FLASH MEMORY 7 PORT 1 8 P01 to P07 P10 to P17 PORT 3 6 P30 to P32, P35 to P37 PORT 4 3 P40, P43, P44 PORT 5 4 P50 to P53 PORT 6 2 P60, P61 PORT 7 8 P70 to P77 PORT 8 7 P80 to P86 INT RL78 CPU CORE 8-BIT INTERVAL TIMER UNIT0(2ch) PORT 0 MULTIPLIER & DIVIDER, MULITIPLYACCUMULATOR DATA TRANSFER CONTROL PORT 12 3 P125 to P127 4 P121 to P124 RAM ch 00 PORT 13 P137 ch 01 POWER ON RESET/ VOLTAGE DETECTOR WINDOW WATCHDOG TIMER LOW-SPEED ON-CHIP OSCILLATOR VDD VSS 12- BIT INTERVAL TIMER REAL-TIME CLOCK2 RTC1HZ RESET CONTROL SDAA0 SERIAL INTERFACE IICA0 SCLA0 SERIAL ARRAY UNIT0 (4 ch) RxD0 TxD0 RxD1 TxD1 POR/LVD CONTROL TOOLRxD, TOOLTxD ON-CHIP DEBUG TOOL0 SYSTEM CONTROL RESET X1 X2/EXCLK HIGH-SPEED ON-CHIP OSCILLATOR UART0 XT1 XT2/EXCLKS UART1 SCK00 SI00 SO00 VOLTAGE REGULATOR CSI00 (SPI) INTERRUPT CONTROL SSI00 SCK10 SI10 SO10 SCL00 SDA00 REGC 8 INTP0 to INTP7 2 PCLBUZ0, PCLBUZ1 CSI10 CRC IIC00 SCL10 SDA10 BUZZER OUTPUT IIC10 CLOCK OUTPUT CONTROL SERIAL ARRAY UNIT1 (2 ch) RxD2 TxD2 UART2 SCK20 SI20 SO20 CSI20 SCL20 SDA20 IIC20 SEG0 to SEG35 36 COM0 to COM7 8 EVENT LINK CONTROLLER BCD ADJUSTMENT LCD CONTROLLER/ DRIVER RAM SPACE FOR LCD DATA VL1 to VL4 CAPH CAPL 10bit A/D CONVERTER 3 Delta-Sigma A/D converter (24bit) ANI12 to ANI14 PGA0 Input Mux PGA00P (PGA0) PGA00N AMP0O AFE Voltage Regulator REGA OPAMP (1ch) AMP0P AMP0N/AMP0P AMP0 Input Mux Sensor Bias (AMP) SBIAS D/A converter (1ch) AV DD AVSS DAC0 (8bit R-2R) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 13 of 143 RL78/H1D 1.5.2 1. OUTLINE 64-pin products (R5F11NL) TIMER ARRAY UNIT0 (8 ch) TI00 TO00 ch 0 TI01/TO01 ch 1 TI02/TO02 ch 2 TI03/TO03 ch 3 TI04/TO04 ch 4 TI05/TO05 ch 5 TI06/TO06 ch 6 PORT 0 DATA FLASH MEMORY CODE FLASH MEMORY ch 7 8-BIT INTERVAL TIMER UNIT0(2ch) PORT 1 6 P10 to P15 PORT 3 6 P30 to P32, P35 to P37 PORT 4 1 P40 PORT 5 3 P50 to P52 PORT 6 2 P60, P61 PORT 7 4 P70,P71,P76, P77 PORT 8 2 P82, P83 INT RL78 CPU CORE TI07/TO07 P03,P05,P06,P07 4 MULTIPLIER & DIVIDER, MULITIPLYACCUMULATOR DATA TRANSFER CONTROL PORT 12 3 P125 to P127 4 P121 to P124 RAM ch 00 PORT 13 P137 ch 01 POWER ON RESET/ VOLTAGE DETECTOR WINDOW WATCHDOG TIMER LOW-SPEED ON-CHIP OSCILLATOR VDD VSS 12- BIT INTERVAL TIMER REAL-TIME CLOCK2 RTC1HZ RESET CONTROL SDAA0 SERIAL INTERFACE IICA0 SCLA0 SERIAL ARRAY UNIT0 (4 ch) RxD0 TxD0 RxD1 TxD1 POR/LVD CONTROL TOOLRxD, TOOLTxD ON-CHIP DEBUG TOOL0 SYSTEM CONTROL RESET X1 X2/EXCLK HIGH-SPEED ON-CHIP OSCILLATOR UART0 XT1 XT2/EXCLKS UART1 SCK00 SI00 SO00 SSI00 VOLTAGE REGULATOR CSI00 (SPI) SCK10 SI10 SO10 SCL00 SDA00 INTERRUPT CONTROL REGC 6 INTP0 to INTP5 CSI10 CRC IIC00 SCL10 SDA10 BUZZER OUTPUT IIC10 CLOCK OUTPUT CONTROL SERIAL ARRAY UNIT1 (2 ch) RxD2 TxD2 UART2 SCK20 SI20 SO20 CSI20 SCL20 SDA20 IIC20 SEG0 to SEG3, SEG5 to SEG9, SEG14 to SEG21, SEG24, SEG26 to SEG34 27 COM0 to COM7 8 1 PCLBUZ1 EVENT LINK CONTROLLER BCD ADJUSTMENT LCD CONTROLLER/ DRIVER RAM SPACE FOR LCD DATA VL1 to VL4 CAPH CAPL 3 ANI8,ANI10,ANI11 Delta-Sigma A/D converter (24bit) PGA0 10bit A/D CONVERTER Input Mux (PGA0) AMP2O AMP1O AMP0O PGA1O AFE Voltage Regulator REGA PGA1 Input Mux (PGA1) OPAMP (3ch) AMP0 Sensor Bias AMP1 AMP0N / AMP0P Input Mux (AMP) SBIAS PGA10P / PGA00P / AMP1P PGA10N / PGA00N / AMP2P AMP2 AMP1N / AMP1P / AMP0P AMP2N / AMP2P / AMP1P D/A converter (2ch) AVDD AVSS DAC0 (8bit R-2R) DAC1 (12bit R-2R) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 14 of 143 RL78/H1D 1.5.3 1. OUTLINE 64-pin products (R5F11PL), 48-pin products (R5F11NG) TIMER ARRAY UNIT0 (8 ch) TI00 TO00 ch 0 TI01/TO01 ch 1 TI02/TO02 ch 2 PORT 0 7 PORT 1 PORT 3 5 PORT 4 TI03/TO03 ch 3 TI04/TO04 ch 4 TI05/TO05 ch 5 TI06/TO06 ch 6 TI07/TO07 ch 7 DATA FLASH MEMORY CODE FLASH MEMORY P01 to P07 P10 P30,P32, P35 to P37 P40 PORT 5 4 P50 to P53 PORT 6 2 P60, P61 PORT 7 4 P70,P71,P76,P77 PORT 12 4 P121 to P124 INT RL78 CPU CORE 8-BIT INTERVAL TIMER UNIT0(2ch) MULTIPLIER & DIVIDER, MULITIPLYACCUMULATOR DATA TRANSFER CONTROL PORT 13 P137 RAM ch 00 ch 01 POWER ON RESET/ VOLTAGE DETECTOR WINDOW WATCHDOG TIMER LOW-SPEED ON-CHIP OSCILLATOR VDD VSS 12- BIT INTERVAL TIMER REAL-TIME CLOCK2 RTC1HZ RESET CONTROL SDAA0 SERIAL INTERFACE IICA0 SCLA0 SERIAL ARRAY UNIT0 (4 ch) RxD0 TxD0 RxD1 TxD1 POR/LVD CONTROL TOOLRxD, TOOLTxD ON-CHIP DEBUG TOOL0 SYSTEM CONTROL RESET X1 X2/EXCLK HIGH-SPEED ON-CHIP OSCILLATOR UART0 XT1 XT2/EXCLKS UART1 SCK00 SI00 SO00 VOLTAGE REGULATOR CSI00 (SPI) INTERRUPT CONTROL SSI00 SCK10 SI10 SO10 SCL00 SDA00 REGC 7 INTP0 to INTP6 2 PCLBUZ0, PCLBUZ1 CSI10 CRC IIC00 SCL10 SDA10 BUZZER OUTPUT IIC10 CLOCK OUTPUT CONTROL SERIAL ARRAY UNIT1 (2 ch) RxD2 TxD2 UART2 SCK20 SI20 SO20 CSI20 SCL20 SDA20 IIC20 EVENT LINK CONTROLLER BCD ADJUSTMENT 10bit A/D CONVERTER 3 Delta-Sigma A/D converter (24bit) ANI8 to ANI10 PGA0 Input Mux (PGA0) AMP2O AMP1O AMP0O PGA1O AFE Voltage Regulator REGA PGA1 Input Mux (PGA1) OPAMP (3ch) AMP0 Sensor Bias AMP1 AMP0N / AMP0P Input Mux (AMP) SBIAS PGA10P / PGA00P / AMP1P PGA10N / PGA 00N / AMP2P PGA11P/PGA01P PGA11N/PGA01N AMP2 AMP1N / AMP1P / AMP0P AMP2N / AMP2P / AMP1P D/A converter (2ch) AV DD AV SS DAC0 (8bit R-2R) DAC1 (12bit R-2R) Remark 64-pin products (R5F11PL) have the same functionality as 48-pin products (R5F11NG). The only difference is the package. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 15 of 143 RL78/H1D 1.5.4 1. OUTLINE 80-pin products (R5F11RM) TIMER ARRAY UNIT0 (8 ch) TI00 TO00 ch 0 TI01/TO01 ch 1 TI02/TO02 ch 2 TI03/TO03 ch 3 TI04/TO04 ch 4 TI05/TO05 ch 5 TI06/TO06 ch 6 TI07/TO07 ch 7 CODE FLASH MEMORY PORT 0 7 P01 to P07 PORT 1 8 P10 to P17 PORT 2 8 P20 to P27 PORT 3 6 P30 to P32, P35 to P37 PORT 4 3 P40, P43, P44 PORT 5 4 P50 to P53 PORT 6 2 P60, P61 PORT 7 8 P70 to P77 DATA TRANSFER CONTROL PORT 8 7 P80 to P86 RAM PORT 12 DATA FLASH MEMORY INT RL78 CPU CORE 8-BIT INTERVAL TIMER UNIT0(2ch) MULTIPLIER & DIVIDER, MULITIPLYACCUMULATOR ch 00 3 P125 to P127 4 P121 to P124 ch 01 PORT 13 P137 8-BIT INTERVAL TIMER UNIT1(2ch) ch 10 ch 11 8-BIT INTERVAL TIMER UNIT2(2ch) AVDD, VDD AVSS, TOOLRxD, VSS TOOLTxD 12- BIT INTERVAL TIMER POWER ON RESET/ VOLTAGE DETECTOR SERIAL ARRAY UNIT0 (4 ch) RxD0 TxD0 RxD1 TxD1 TIMER RJ UNIT0 TRJO0 RESET CONTROL TRJIO1 TIMER RJ UNIT1 SCK10 SI10 SO10 SCL00 SDA00 EXSDI0 EXSDI1 EXSDO0 EXSDO1 EXTERNAL SIGNAL SAMPLER SMOTD(6ch) TxDMG0 CSI20 SCL20 SDA20 IIC20 SEG0 to SEG35 36 COM0 to COM7 8 VL1 to VL4 CAPH CAPL XT1 XT2/EXCLKS REGC 8 INTP0 to INTP7 2 PCLBUZ0, PCLBUZ1 CRC BUZZER OUTPUT EVENT LINK CONTROLLER BCD ADJUSTMENT SERIAL ARRAY UNIT1 (2 ch) UART2 X1 X2/EXCLK RxDMG0 UARTMG IIC10 RxD2 TxD2 INTERRUPT CONTROL CLOCK OUTPUT CONTROL IIC00 SCK20 SI20 SO20 RESET HIGH-SPEED ON-CHIP OSCILLATOR VOLTAGE REGULATOR SMP0 SMP1 SMP2 SMP3 SMP4 SMP5 SMO0 SMO1 SMO2 CSI10 SCL10 SDA10 TOOL0 SYSTEM CONTROL UART1 CSI00 (SPI) ON-CHIP DEBUG TRJO1 UART0 SCK00 SI00 SO00 SSI00 POR/LVD CONTROL TRJIO0 REAL-TIME CLOCK2 RTC1HZ P150,P151 SCLA0 ch 21 WINDOW WATCHDOG TIMER 2 SDAA0 SERIAL INTERFACE IICA0 ch 20 LOW-SPEED ON-CHIP OSCILLATOR PORT 15 10bit A/D CONVERTER 3 ANI8 to ANI10 LCD CONTROLLER/ DRIVER RAM SPACE FOR LCD DATA R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 16 of 143 RL78/H1D 1.6 1. OUTLINE Outline of Functions (1/3) Item Code flash memory (KB) 80-pin LFQFP 64-pin LFQFP 64-pin TFBGA 48-pin LFQFP 80-pin LFQFP R5F11NMx (x = E to G) R5F11NLx (x = F, G) R5F11PLx, R5F11NGx (x = F, G) R5F11RMG 64 to 128 96 to 128 96 to 128 128 Data flash memory (KB) RAM (KB) Memory space Main system clock 4 4 4 4 5.5 5.5 5.5 8 1 MB High-speed system clock X1 (crystal/ceramic) oscillation, external main system clock input (EXCLK) 1 to 20 MHz: VDD = 2.7 to 5.5 V, 1 to 20 MHz: VDD = 2.7 to 5.5 V, 1 to 8 MHz: VDD = 2.4 to 2.7 V 1 to 8 MHz: VDD = 1.8 to 2.7 V High-speed on-chip HS (high-speed main) operation mode: 1 to 24 MHz HS (high-speed main) operation mode: oscillator clock (VDD = 2.7 to 5.5 V), 1 to 24 MHz (VDD = 2.7 to 5.5 V), HS (high-speed main) operation mode: 1 to 16 MHz HS (high-speed main) operation mode: (VDD = 2.4 to 5.5 V) 1 to 16 MHz (VDD = 2.4 to 5.5 V), LS (low-speed main) operation mode: 1 to 8 MHz (VDD = 1.8 to 5.5 V) Subsystem clock XT1 (crystal) oscillation, external subsystem clock input (EXCLKS) 32.768 kHz (TYP.): VDD = 2.4 to 5.5 V 32.768 kHz (TYP.): VDD = 1.8 to 5.5 V 15 kHz (TYP.): VDD = 2.4 to 5.5 V 15 kHz (TYP.): VDD = 1.8 to 5.5 V 38.4 kHz (TYP.): VDD = 1.8 to 5.5 V Low-speed on-chip oscillator clock General-purpose register 8 bits × 32 registers (8 bits × 8 registers × 4 banks) Minimum instruction execution time 0.04167 µs (High-speed on-chip oscillator clock: fIH = 24 MHz operation) 0.05 µs (High-speed system clock: fMX = 20 MHz operation) 30.5 µs (Subsystem clock: fSUB = 32.768 kHz operation) Instruction set I/O port • • • • • Data transfer (8/16 bits) Adder and subtractor/logical operation (8/16 bits) Multiplication (8 bits × 8 bits, 16 bits × 16 bits), Division (16 bits ÷ 16 bits, 32 bits ÷ 32 bits) Multiplication and Accumulation (16 bits × 16 bits + 32 bits) Rotate, barrel shift, and bit manipulation (Set, reset, test, and Boolean operation), etc. Total 53 36 29 63 CMOS I/O 46 29 22 56 CMOS input 5 5 5 5 CMOS output — — — — 2 2 2 2 N-ch open-drain I/O (6 V tolerance) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 17 of 143 RL78/H1D 1. OUTLINE (2/3) 80-pin LFQFP 64-pin LFQFP 64-pin TFBGA 48-pin LFQFP 80-pin LFQFP R5F11NMx (x = E to G) R5F11NLx (x = F, G) R5F11PLx, R5F11NGx (x = F, G) R5F11RMG Item Timer 16-bit timer TAU 8 channels (Timer outputs: 8, PWM outputs: 7 Note 1) 8-bit or 16-bit interval 2 channels (8 bits)/1 channel (16 bits) 6 channels (8 bits)/3 channels (16 bits) timer Watchdog timer 1 channel 12-bit interval timer 1 channel Real-time clock 2 1 channel RTC output 1 1 Hz (subsystem clock: fSUB = 32.768 kHz) 16-bit timer RJ — External signal sampler — Sampling output timer 1 channel Input: 6 channels — detector (SMOTD) Clock output/buzzer output 2 channels, timer outputs: 2 2 1 Output: 3 channels 2 2 • 2.44 kHz, 4.88 kHz, 9.77 kHz, 1.25 MHz, 2.5 MHz, 5 MHz, 10 MHz (Main system clock: fMAIN = 20 MHz operation) • 256 Hz, 512 Hz, 1.024 kHz, 2.048 kHz, 4.096 kHz, 8.192 kHz, 16.384 kHz, 32.768 kHz (Subsystem clock: fSUB = 32.768 kHz operation) 8/10-bit resolution Internal A/D converter External 3 channels 2 channels: Internal reference voltage (1.45 V), temperature sensor output voltage (only selectable in HS (high-speed main) mode) 24-bit ΔΣ A/D converter with programmable gain instrumentation amplifier 0 (PGA0) D/A converter Analog input: 1 channel (differential or single-ended) Analog input: 1 channel (differential or single-ended), 3 channels (single-ended) Analog input: 2 channels (differential or single-ended), 3 channels (single-ended) — — 1 channel (with an output amplifier but no external output pin) 1 channel (with an output amplifier but no external output pin) — 1 channel (without an output amplifier and no external output pin) 1 channel (without an output amplifier and no external output pin) 1 channel (without an output amplifier and no external output pin) — — 1 channel 1 channel — 12-bit 8-bit Programmable gain instrumentation amplifier 1 (PGA1) Rail-to-rail operational amplifier General-purpose operational amplifier Serial interface 1 channel 1 channel 1 channel — — 2 channels 2 channels — • CSI (SPI supported): 1 channel/UART (LIN-bus supported): 1 channel/simplified I2C: 1 channel • CSI: 1 channel/UART: 1 channel/simplified I2C: 1 channel • CSI: 1 channel/UART: 1 channel/simplified I2C: 1 channel I2C bus Serial interface UARTMG R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 1 channel 1 channel — 1 channel Page 18 of 143 RL78/H1D 1. OUTLINE (3/3) Item LCD controller/driver 80-pin LFQFP 64-pin LFQFP 64-pin TFBGA 48-pin LFQFP 80-pin LFQFP R5F11NMx (x = E to G) R5F11NLx (x = F, G) R5F11PLx, R5F11NGx (x = F, G) R5F11RMG Internal voltage boosting method, capacitor split method, and external resistance division method are switchable. Segment signal output 36 (32) Note 2 27 (23) Note 2 — 36 (32) Note 2 Common signal output 4 (8) Note 2 4 (8) Note 2 — 4 (8) Note 2 Data transfer controller (DTC) 26 sources 24 sources 25 sources Event input: 20, Event input: 18, Event input: 19, Event trigger Event trigger Event trigger output: 7 output: 10 output: 10 Internal 29 29 29 43 External 8 6 7 8 Event link controller (ELC) Vectored interrupt sources Reset • • • • 35 sources Event input: 26, Event trigger output: 5 Reset by RESET pin Internal reset by watchdog timer Internal reset by power-on-reset Internal reset by voltage detector • Internal reset by illegal instruction execution Note 3 • Internal reset by RAM parity error • Internal reset by illegal-memory access Power-on-reset circuit • Power-on-reset: 1.51 ±0.04 V • Power-down-reset: 1.50 ±0.04 V Voltage detector • Rising edge: 2.50 V to 4.06 V (9 stages) • Falling edge: 2.45 V to 3.98 V (9 stages) On-chip debug function Provided Power supply voltage VDD = 2.4 to 5.5 V • Rising edge: 1.88 V to 4.06 V (12 stages) • Falling edge: 1.84 V to 3.98 V (12 stages) VDD = 1.8 to 5.5 V (10-bit SAR A/D converter: 2.4 to 5.5 V, operating voltage of the analog front-end (AFE): 2.7 to 5.5 V) Operating ambient temperature TA = -40 to +85°C (A: Consumer applications) TA = -40 to +85°C (D: Industrial applications) Note 1. The number of outputs depends on the setting of channels in use and the number of the master. Note 2. The number in parentheses indicates the number of signal outputs when 8 coms are used. Note 3. The illegal instruction is generated when instruction code FFH is executed. Reset by the illegal instruction execution not is issued by emulation with the in-circuit emulator or on-chip debug emulator. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 19 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) This chapter describes the electrical specifications for the products A: Consumer applications (TA = -40 to +85°C). Caution 1. The RL78 microcontroller has an on-chip debug function, which is provided for development and evaluation. Do not use the on-chip debug function in products designated for mass production, because the guaranteed number of rewritable times of the flash memory may be exceeded when this function is used, and product reliability therefore cannot be guaranteed. Renesas Electronics is not liable for problems occurring when the on-chip debug function is used. Caution 2. The pins mounted depend on the product. Refer to 2.1 Port Function to 2.2 Functions other than port pins in the User’s Manual: Hardware. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 20 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) 2.1 Absolute Maximum Ratings Absolute Maximum Ratings Parameter Supply voltage REGC pin input voltage (1/3) Symbols Conditions VDD Ratings Unit -0.5 to +6.5 V AVDD AVDD = VDD -0.5 to +6.5 V AVSS AVSS = VSS -0.5 to +0.3 V -0.3 to +2.8 V VIREGC REGC and -0.3 to VDD + 0.3 Note 1 REGA pin input voltage VIREGA REGA -0.3 to +2.8 V and -0.3 to AVDD + 0.3 Note 2 Input voltage VI1 P01 to P07, P10 to P17, P30 to P32, P35 to P37, -0.3 to VDD + 0.3 Note 3 V -0.3 to +6.5 V P40, P43, P44, P50 to P53, P70 to P77, P80 to P86, P121 to P124, P125 to P127, P137, EXCLK, EXCLKS, RESET Output voltage VI2 P60, P61 (N-ch open-drain) VO1 P01 to P07, P10 to P17, P30 to P32, P35 to P37, -0.3 to VDD + 0.3 Note 3 V P40, P43, P44, P50 to P53, P60, P61, P70 to P77, P80 to P86, P125 to P127 Analog input voltage VAI1 ANI8 to ANI11 -0.3 to VDD + 0.3 Note 3 V VAI2 ANI12 to ANI14 -0.3 to AVDD + 0.3 Note 3 V -0.3 to AVDD + 0.3 Note 3 V PGA00P, PGA01P, PGA10P, PGA11P, PGA00N, PGA01N, PGA10N, PGA11N, AMP0P to AMP2P, AMP0N to AMP2N Analog output voltage Note 1. VOA SBIAS, PGA1O, AMP0O to AMP2O Connect the REGC pin to VSS via a capacitor (0.47 to 1 µF). This value regulates the absolute maximum rating of the REGC pin. Do not use this pin with voltage applied to it. Note 2. Connect the REGA pin to AVSS via a capacitor (0.22 μF). This value regulates the absolute maximum rating of the REGA pin. Do not use this pin with voltage applied to it. Note 3. Caution Must be 6.5 V or lower. Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. Remark 1. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. Remark 2. The reference voltage is VSS (for the VDD systems) = AVSS (for the AVDD systems) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 21 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Absolute Maximum Ratings Parameter LCD voltage (2/3) Symbols Conditions Ratings Unit VLI1 VL1 input voltage Note 1 -0.3 to +2.8 V VLI2 VL2 input voltage Note 1 -0.3 to +6.5 V VLI3 VL3 input voltage Note 1 -0.3 to +6.5 V VLI4 VL4 input voltage Note 1 -0.3 to +6.5 V VLI5 CAPL, CAPH input voltage Note 1 -0.3 to +6.5 V VLO1 VL1 output voltage -0.3 to +2.8 V VLO2 VL2 output voltage -0.3 to +6.5 V VLO3 VL3 output voltage -0.3 to +6.5 V VLO4 VL4 output voltage -0.3 to +6.5 V VLO5 CAPL, CAPH output voltage -0.3 to +6.5 V VLO6 COM0 to COM7 -0.3 to VDD + 0.3 V External resistance division method SEG0 to SEG35 output voltage Note 2 Capacitor split method -0.3 to VDD + 0.3 V Note 2 Internal voltage boosting method -0.3 to VLI4 + 0.3 V Note 2 Note 1. This value only indicates the absolute maximum ratings when applying voltage to the VL1, VL2, VL3, and VL4 pins; it does not mean that applying voltage to these pins is recommended. When using the internal voltage boosting method or capacitance split method, connect these pins to VSS via a capacitor (0.47 μF ± 30%) and connect a capacitor (0.47 μF ± 30%) between the CAPL and CAPH pins. Note 2. Caution Must be 6.5 V or lower. Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 22 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Absolute Maximum Ratings Parameter Output current, high Output current, low (3/3) Symbols IOH1 IOL1 Conditions Ratings Unit -40 mA Total of all P40, P43, P44, P80 to P83 -70 mA pins P01 to P07, P10 to P17, P30 to P32, P35 to P37, -100 mA -170 mA P50 to P53, P70 to P77, P84 to P86, P125 to P127 Per pin 40 mA Total of all P40, P43, P44, P80 to P83 70 mA pins P01 to P07, P10 to P17, P30 to P32, P35 to P37, 100 mA 170 mA P50 to P53, P60, P61, P70 to P77, P84 to P86, -40 to +85 °C -65 to +150 °C Per pin P125 to P127 Operating ambient TA temperature Storage temperature Caution In normal operation mode In flash memory programming mode Tstg Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 23 of 143 RL78/H1D 2.2 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Oscillator Characteristics 2.2.1 X1 and XT1 oscillator characteristics (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Resonator Conditions MIN. MAX. Unit X1 clock oscillation frequency (fX) Ceramic resonator/crystal resonator 2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 MHz 2.4 V ≤ VDD < 2.7 V 1.0 16.0 Note XT1 clock oscillation frequency Crystal resonator 32 TYP. 32.768 35 kHz (fXT) Note Note Indicates only permissible oscillator frequency ranges. Refer to AC Characteristics for instruction execution time. Request evaluation by the manufacturer of the oscillator circuit mounted on a board to check the oscillator characteristics. Caution Since the CPU is started by the high-speed on-chip oscillator clock after a reset release, check the X1 clock oscillation stabilization time using the oscillation stabilization time counter status register (OSTC) by the user. Determine the oscillation stabilization time of the OSTC register and the oscillation stabilization time select register (OSTS) after sufficiently evaluating the oscillation stabilization time with the resonator to be used. Remark When using the X1 and XT1 oscillator, refer to 5.4 System Clock Oscillator in the User’s Manual: Hardware. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 24 of 143 RL78/H1D 2.2.2 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) On-chip oscillator characteristics (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Oscillators High-speed on-chip oscillator clock Symbol fIH Conditions 2.7 V ≤ VDD ≤ 5.5 V MIN. TYP. 1 MAX. Unit 24 MHz frequency Notes 1, 2 2.4 V ≤ VDD < 2.7 V 1 16 MHz High-speed on-chip oscillator clock -20 to +85°C 2.4 V ≤ VDD ≤ 5.5 V -1.0 +1.0 % frequency accuracy -40 to +85°C 2.4 V ≤ VDD ≤ 5.5 V -1.5 +1.5 % Low-speed on-chip oscillator clock 15 fIL kHz frequency Low-speed on-chip oscillator clock -15 +15 % frequency accuracy Note 1. High-speed on-chip oscillator frequency is selected with bits 0 to 4 of the option byte (000C2H/010C2H) and bits 0 to 2 of the HOCODIV register. Note 2. This only indicates the oscillator characteristics. Refer to AC Characteristics for instruction execution time. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 25 of 143 RL78/H1D 2.3 2.3.1 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) DC Characteristics Pin characteristics (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Items Output current, high Symbol Note 1 IOH1 MAX. Unit Per pin for P01 to P07, P10 to P17, Conditions MIN. TYP. -10.0 mA P30 to P32, P35 to P37, P40, P43, Note 2 P44, P50 to P53, P70 to P77, P80 to P86, P125 to P127 Total of P40, P43, P44, P80 to P83 4.0 V ≤ VDD ≤ 5.5 V -55 mA (When duty ≤ 70% Note 3) 2.7 V ≤ VDD < 4.0 V -10 mA 2.4 V ≤ VDD < 2.7 V -5 mA Total of P01 to P07, P10 to P17, 4.0 V ≤ VDD ≤ 5.5 V -69 mA P30 to P32, P35 to P37, P50 to P53, 2.7 V ≤ VDD < 4.0 V -23 mA 2.4 V ≤ VDD < 2.7 V -12 mA Total of all pins (When duty ≤ 70% Note 3) 2.4 V ≤ VDD ≤ 5.5 V -124 mA P70 to P77, P84 to P86, P125 to P127 (When duty ≤ 70% Note 3) Note 1. Value of current at which the device operation is guaranteed even if the current flows from the VDD pin (IOH1) to an output pin. Note 2. However, do not exceed the total current value. Note 3. Specification under conditions where the duty factor ≤ 70%. The output current value that has changed to the duty factor > 70% the duty ratio can be calculated with the following expression (when changing the duty factor from 70% to n%). • Total output current of pins = (IOH × 0.7)/(n × 0.01) Where n = 80% and IOH = −10.0 mA Total output current of pins = (−10.0 × 0.7)/(80 × 0.01) ≅ −8.7 mA However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A current higher than the absolute maximum rating must not flow into one pin. Caution P02 to P04, P06, P07, P10, P35 to P37, P40, P43, P44, P50 to P52, and P80 to P82 do not output high level in N-ch open-drain mode. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 26 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Items Output current, low Note 1 Symbol IOL1 Conditions MIN. TYP. MAX. Unit Per pin for P01 to P07, P10 to P17, 20.0 mA P30 to P32, P35 to P37, P40, P43, Note 2 P44, P50 to P53, P70 to P77, P80 to P86, P125 to P127 Per pin for P60 and P61 15.0 mA Note 2 Total of P40, P43, P44, P80 to P83 4.0 V ≤ VDD ≤ 5.5 V 70 mA (When duty ≤ 70% Note 3) 2.7 V ≤ VDD < 4.0 V 15 mA 2.4 V ≤ VDD < 2.7 V 9 mA 4.0 V ≤ VDD ≤ 5.5 V 90 mA P35 to P37, P50 to P53, P60, P61, 2.7 V ≤ VDD < 4.0 V 35 mA P70 to P77, P84 to P86, P125 to P127 2.4 V ≤ VDD < 2.7 V 20 mA 160 mA P01 to P07, P10 to P17, P30 to P32, (When duty ≤ 70% Note 3) Total of all pins (When duty ≤ 70% Note 3) Note 1. Value of current at which the device operation is guaranteed even if the current flows from an output pin to the VSS pin (IOL1). Note 2. However, do not exceed the total current value. Note 3. Specification under conditions where the duty factor ≤ 70%. The output current value that has changed to the duty factor > 70% the duty ratio can be calculated with the following expression (when changing the duty factor from 70% to n%). • Total output current of pins = (IOL × 0.7)/(n × 0.01) Where n = 80% and IOL = 10.0 mA Total output current of pins = (10.0 × 0.7)/(80 × 0.01) ≅ 8.7 mA However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A current higher than the absolute maximum rating must not flow into one pin. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 27 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Items Input voltage, high Symbol VIH1 Conditions P01 to P07, P10 to P17, P30 to P32, MIN. Normal input buffer TYP. MAX. Unit 0.8 VDD VDD V 2.2 VDD V 2.0 VDD V 1.50 VDD V P35 to P37, P40, P43, P44, P50 to P53, P70 to P77, P80 to P86, P125 to P127 VIH2 For TTL mode supported ports TTL input buffer 4.0 V ≤ VDD ≤ 5.5 V TTL input buffer 3.3 V ≤ VDD < 4.0 V TTL input buffer 2.4 V ≤ VDD < 3.3 V Input voltage, low VIH4 P60, P61 0.7 VDD 6.0 V VIH5 P121 to P124, P137, EXCLK, EXCLKS, RESET 0.8 VDD VDD V VIL1 P01 to P07, P10 to P17, P30 to P32, Normal input buffer 0 0.2 VDD V TTL input buffer 0 0.8 V 0 0.5 V 0 0.32 V P35 to P37, P40, P43, P44, P50 to P53, P60, P61, P70 to P77, P80 to P86, P125 to P127 VIL2 For TTL mode supported ports 4.0 V ≤ VDD ≤ 5.5 V TTL input buffer 3.3 V ≤ VDD < 4.0 V TTL input buffer 2.4 V ≤ VDD < 3.3 V Caution VIL4 P60, P61 0 0.3 VDD V VIL5 P121 to P124, P137, EXCLK, EXCLKS, RESET 0 0.2 VDD V The maximum value of VIH of pins P02 to P04, P06, P07, P10, P35 to P37, P40, P43, P44, P50 to P52, and P80 to P82 is VDD, even in the N-ch open-drain mode. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 28 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Items Output voltage, high Symbol VOH1 Conditions MIN. P01 to P07, P10 to P17, P30 to P32, 4.0 V ≤ VDD ≤ 5.5 V, P35 to P37, P40, P43, P44, IOH = -10.0 mA P50 to P53, P70 to P77, P80 to P86, 4.0 V ≤ VDD ≤ 5.5 V, P125 to P127 IOH = -3.0 mA 2.7 V ≤ VDD ≤ 5.5 V, TYP. MAX. Unit VDD - 1.5 V VDD - 0.7 V VDD - 0.6 V VDD - 0.5 V IOH = -2.0 mA 2.4 V ≤ VDD ≤ 5.5 V, IOH = -1.5 mA Output voltage, low VOL1 P01 to P07, P10 to P17, P30 to P32, 4.0 V ≤ VDD ≤ 5.5 V, P35 to P37, P40, P43, P44, IOL = 20.0 mA P50 to P53, P70 to P77, P80 to P86, 4.0 V ≤ VDD ≤ 5.5 V, P125 to P127 IOL = 8.5 mA 2.7 V ≤ VDD ≤ 5.5 V, 1.3 V 0.7 V 0.6 V 0.4 V 0.4 V 2.0 V 0.4 V 0.4 V 0.4 V IOL = 3.0 mA 2.7 V ≤ VDD ≤ 5.5 V, IOL = 1.5 mA 2.4 V ≤ VDD ≤ 5.5 V, IOL = 0.6 mA VOL3 P60, P61 4.0 V ≤ VDD ≤ 5.5 V, IOL = 15.0 mA 4.0 V ≤ VDD ≤ 5.5 V, IOL = 5.0 mA 2.7 V ≤ VDD ≤ 5.5 V, IOL = 3.0 mA 2.4 V ≤ VDD ≤ 5.5 V, IOL = 2.0 mA Caution P02 to P04, P06, P07, P10, P35 to P37, P40, P43, P44, P50 to P52, and P80 to P82 do not output high level in N-ch open-drain mode. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 29 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Items Symbol Input leakage ILIH1 Conditions P01 to P07, P10 to P17, P30 to P32, MIN. TYP. VI = VDD MAX. Unit 1 µA 1 µA 10 µA -1 µA -1 µA -10 µA 100 kΩ P35 to P37, P40, P43, P44, current, high P50 to P53, P60, P61, P70 to P77, P80 to P86, P125 to P127, P137, RESET ILIH3 P121 to P124 (X1, X2, EXCLK, XT1, VI = VDD In input port or XT2, EXCLKS) external clock input In resonator connection Input leakage ILIL1 P01 to P07, P10 to P17, P30 to P32, VI = VSS P35 to P37, P40, P43, P44, current, low P50 to P53, P60, P61, P70 to P77, P80 to P86, P125 to P127, P137, RESET ILIL3 P121 to P124 (X1, X2, EXCLK, XT1, XT2, EXCLKS) VI = VSS In input port or external clock input In resonator connection On-chip pull-up resistance RU1 P01 to P07, P10 to P17, P30 to P32, VI = VSS or In input port 10 20 P35 to P37, P40, P43, P44, P50 to P53, P70 to P77, P80 to P86, P125 to P127 Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 30 of 143 RL78/H1D 2.3.2 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Supply current characteristics (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Supply Symbol IDD1 Conditions Operating HS mode current Notes 1, Note 6 MIN. TYP. MAX. Basic VDD = 5.0 V 1.7 (high-speed main) operation VDD = 3.0 V 1.7 mode Note 5 Normal VDD = 5.0 V 3.7 6.2 operation VDD = 3.0 V 3.7 6.2 Normal VDD = 5.0 V 2.8 4.8 operation VDD = 3.0 V 2.8 4.8 Normal Square wave input 3.1 5.2 operation Resonator connection 3.3 5.3 fMX = 20 MHz Note 2, Normal Square wave input 3.0 5.2 VDD = 3.0 V operation Resonator connection 3.3 5.3 Normal Square wave input 2.6 4.5 fIH = 24 MHz Note 3 fIH = 16 MHz Note 3 HS fMX = 20 MHz (high-speed main) VDD = 5.0 V mode Note 5 fMX = 16 MHz Note 2, Note 2, operation Resonator connection 2.8 4.6 fMX = 16 MHz Note 2, Normal Square wave input 2.6 4.5 VDD = 3.0 V operation Resonator connection 2.8 4.6 Normal Square wave input 1.9 3.0 Note 2, VDD = 5.0 V operation Resonator connection 1.9 3.0 fMX = 10 MHz Note 2, Normal Square wave input 1.9 3.0 VDD = 3.0 V Subsystem clock fSUB = 32.768 kHz operation TA = -40°C Note 4 operation Resonator connection 1.9 3.0 Normal Square wave input 4.3 5.8 operation Resonator connection 4.6 5.8 Square wave input 4.3 5.8 fSUB = 32.768 kHzNote 4 Normal operation TA = +25°C fSUB = 32.768 kHzNote 4 TA = +50°C Resonator connection 4.6 5.8 Normal Square wave input 4.5 7.6 operation Resonator connection 4.5 7.6 Square wave input 4.7 9.2 fSUB = 32.768 kHzNote 4 Normal operation TA = +70°C fSUB = 32.768 kHzNote 4 TA = +85°C Unit mA VDD = 5.0 V fMX = 10 MHz Note 1. (1/2) Resonator connection 5.1 9.2 Normal Square wave input 5.2 12.6 operation Resonator connection 5.7 12.6 mA µA Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the LCD controller/driver, A/D converter, LVD, I/O port, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite.The current flowing into AFE is not included. Note 2. When high-speed on-chip oscillator and subsystem clock are stopped. Note 3. When high-speed system clock and subsystem clock are stopped. Note 4. When high-speed on-chip oscillator and high-speed system clock are stopped. When AMPHS1 = 1 (Ultra-low power consumption oscillation). However, not including the current flowing into the real-time clock 2, 12-bit interval timer, 8-bit interval timer, and watchdog timer. Note 5. Relationship between operation voltage width, operation frequency of CPU and operation mode is as below. HS (high-speed main) mode: 2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz 2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz Note 6. IDD1 do not include the current flowing to the AFE. The current value of the RL78 microcontrollers is the sum of IDD1, IDD2, or IDD3 and AFE current (AVDD systems) when the AFE operates in the operating mode, HALT mode, or STOP mode. Remark 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) Remark 2. fIH: High-speed on-chip oscillator clock frequency Remark 3. fSUB: Subsystem clock frequency (XT1 clock oscillation frequency) Remark 4. Except subsystem clock operation, temperature condition of the TYP. value is TA = 25°C. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 31 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Supply IDD2 current Note 2 (2/2) Conditions HALT mode TYP. MAX. Unit HS (high-speed main) fIH = 24 MHz Note 4 VDD = 5.0 V 0.42 1.83 mA mode Note 7 VDD = 3.0 V 0.42 1.83 Notes 1, Note 9 MIN. VDD = 5.0 V 0.39 1.38 VDD = 3.0 V 0.39 1.38 HS (high-speed main) fMX = 20 MHz Note 3, Square wave input 0.26 1.55 mode Note 7 VDD = 5.0 V Resonator connection 0.40 1.68 fMX = 20 MHz Note 3, Square wave input 0.25 1.55 VDD = 3.0 V Resonator connection 0.40 1.68 fMX = 16 MHz Note 3, Square wave input 0.23 1.22 VDD = 5.0 V Resonator connection 0.36 1.39 1.22 fIH = 16 MHz Note 4 Square wave input 0.22 VDD = 3.0 V Resonator connection 0.35 1.39 fMX = 10 MHz Note 3, Square wave input 0.19 0.82 VDD = 5.0 V Resonator connection 0.29 0.90 Square wave input 0.18 0.82 Resonator connection 0.28 0.90 fMX = 16 MHz fMX = 10 MHz Note 3, Note 3, VDD = 3.0 V Subsystem clock fSUB = 32.768 kHz Note 5 Square wave input 0.32 0.69 operation TA = -40°C 0.51 0.89 fSUB = 32.768 kHz Note 5 Square wave input 0.41 0.82 TA = +25°C 0.62 1.00 fSUB = 32.768 kHz Note 5 Square wave input 0.52 1.40 TA = +50°C Resonator connection 0.75 1.60 Square wave input 0.82 2.70 Resonator connection 1.08 2.90 fSUB = 32.768 kHz Note 5 Square wave input 1.38 4.95 TA = +85°C 1.62 5.15 fSUB = 32.768 kHz TA = +70°C Resonator connection Resonator connection Note 5 Resonator connection IDD3 STOP mode TA = -40°C 0.20 0.59 Note 6 Note 8 TA = +25°C 0.26 0.72 TA = +50°C 0.33 1.30 TA = +70°C 0.53 2.60 TA = +85°C 0.93 4.85 mA µA µA (Notes and Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 32 of 143 RL78/H1D Note 1. 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the LCD controller/driver, A/D converter, LVD, I/O port, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite.The current flowing into AFE is not included. Note 2. During HALT instruction execution by flash memory. Note 3. When high-speed on-chip oscillator and subsystem clock are stopped. Note 4. When high-speed system clock and subsystem clock are stopped. Note 5. When high-speed on-chip oscillator and high-speed system clock are stopped. When RTCLPC = 1 and setting ultra-low current consumption (AMPHS1 = 1). The current flowing into the real-time clock 2 is included. However, not including the current flowing into the 12-bit interval timer, 8-bit interval timer, and watchdog timer. Note 6. Note 7. Not including the current flowing into the real-time clock 2, 12-bit interval timer, 8-bit interval timer, and watchdog timer. Relationship between operation voltage width, operation frequency of CPU and operation mode is as below. HS (high-speed main) mode: 2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz 2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz Note 8. Note 9. Regarding the value for current to operate the subsystem clock in STOP mode, refer to that in HALT mode. IDD2 and IDD3 do not include the current flowing to the AFE. The current value of the RL78 microcontrollers is the sum of IDD1, IDD2, or IDD3 and AFE current (AVDD systems) when the AFE operates in the operating mode, HALT mode, or STOP mode. Remark 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) Remark 2. fIH: High-speed on-chip oscillator clock frequency Remark 3. fSUB: Subsystem clock frequency (XT1 clock oscillation frequency) Remark 4. Except subsystem clock operation, temperature condition of the TYP. value is TA = 25°C. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 33 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) • Peripheral functions (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Low-speed Symbol Conditions MIN. TYP. MAX. Unit 0.20 µA fSUB = 32.768 kHz 0.02 µA fSUB = 32.768 kHz, fMAIN stopped 0.02 µA 0.12 µA 0.10 µA 0.22 µA IFIL Note 1 on-chip oscillator operating current RTC2 operating IRTC current Notes 1, 3 12-bit interval ITMKA timer operating Notes 1, 2, 4 current 8-bit interval timer ITMRT operating current Notes 1, 14 fSUB = 32.768 kHz, fMAIN stopped, per unit 8-bit counter mode × 2-channel operation 16-bit counter mode operation Watchdog timer IWDT operating current Notes 1, 5 A/D converter IADC operating current Notes 1, 6 Internal reference IADREF voltage (1.45 V) Notes 1, 7 fIL = 15 kHz When conversion at maximum speed Normal mode, VDD = 5.0 V 1.3 1.7 mA Low-voltage mode, VDD = 3.0 V 0.5 0.7 mA 85 µA 85 µA 0.06 µA current Temperature ITMPS Note 1 sensor operating current LVD operating ILVI current Notes 1, 8 2.0 12.2 mA 2.0 12.2 mA The mode is performed 0.50 0.60 mA During A/D conversion, 1.20 1.44 0.70 0.84 Self-programming IFSP operating current Notes 1, 9 BGO operating IBGO current Notes 1, 10 SNOOZE ISNOZ operating current Notes 1, 11 A/D converter operation low-voltage mode, VDD = 3.0 V CSI/UART operation DTC operation 3.1 LCD operating ILCD1 External fLCD = fSUB 1/3 bias VDD = 5.0 V, current Notes 12, 13 resistance LCD clock = 128 Hz 4-time slice VL4 = 5.0 V mA mA 0.04 0.20 µA 0.85 2.20 µA 1.55 3.70 µA 0.20 0.50 µA division method ILCD2 Internal voltage fLCD = fSUB 1/3 bias VDD = 3.0 V, Note 12 boosting method LCD clock = 128 Hz 4-time slice VL4 = 3.0 V (VLCD = 04H) VDD = 5.0 V, VL4 = 5.1 V (VLCD = 04H) ILCD3 Capacitor split fLCD = fSUB 1/3 bias VDD = 3.0 V, Note 12 method LCD clock = 128 Hz 4-time slice VL4 = 3.0 V (Notes and Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 34 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Note 1. Current flowing to VDD. Note 2. When high speed on-chip oscillator and high-speed system clock are stopped. Note 3. Current flowing only to the real-time clock 2 (excluding the operating current of the low-speed on-chip oscillator and the XT1 oscillator). The supply current of the RL78 microcontrollers is the sum of the values of either IDD1 or IDD2, and IRTC, when the real-time clock 2 operates in the operating mode or HALT mode. When the low-speed on-chip oscillator is selected, IFIL should be added. IDD2 subsystem clock operation includes the operational current of the real-time clock 2. Note 4. Current flowing only to the 12-bit interval timer (excluding the operating current of the low-speed on-chip oscillator and the XT1 oscillator). The supply current of the RL78 microcontrollers is the sum of the values of either IDD1 or IDD2, and ITMKA , when the 12-bit interval timer operates in the operating mode or HALT mode. When the low-speed on-chip oscillator is selected, IFIL should be added. IDD2 subsystem clock operation includes the operational current of the 12-bit interval timer. Note 5. Current flowing only to the watchdog timer (including the operating current of the low-speed on-chip oscillator). The current value of the RL78 microcontrollers is the sum of IDD1, IDD2, or IDD3 and IWDT when the watchdog timer operates in STOP mode. Note 6. Current flowing only to the A/D converter. The supply current of the RL78 microcontrollers is the sum of IDD1 or IDD2 and IADC, IADREF when the A/D converter operates in the operating mode or the HALT mode. Note 7. Operation current flowing to the internal reference voltage. Note 8. Current flowing only to the LVD circuit. The current value of the RL78 microcontrollers is the sum of IDD1, IDD2, or IDD3 Note 9. Current flowing only during self-programming. Note 10. Current flowing only during data flash rewrite. Note 11. For shift time to the SNOOZE mode, see 27.3.3 SNOOZE mode in the User’s Manual: Hardware. Note 12. Current flowing only to the LCD controller/driver (VDD pin). The current value of the RL78 microcontrollers is the sum of and ILVI when the LVD circuit operates in the operating mode, HALT mode, or STOP mode. the LCD operating current (ILCD1, ILCD2, or ILCD3) and the supply current (IDD1 or IDD2) when the LCD controller/driver operates in the operating mode or HALT mode. Not including the current that flows through the LCD panel. Note 13. Not including the current that flows through the external divider resistor. Note 14. Current flowing only to the 8-bit interval timer (excluding the operating current of the low-speed on-chip oscillator and the XT1 oscillator). The supply current of the RL78 microcontrollers is the sum of the values of either IDD1 or IDD2, and IIT, when the 8-bit interval timer operates in the operating mode or HALT mode. When the low-speed on-chip oscillator is selected, IFIL should be added. Remark 1. fIL: Low-speed on-chip oscillator clock frequency Remark 2. fSUB: Subsystem clock frequency (XT1 clock oscillation frequency) Remark 3. fCLK: CPU/peripheral hardware clock frequency Remark 4. Temperature condition of the TYP. value is TA = 25°C R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 35 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) • AFE functions (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter 24-bit ΔΣ A/D Symbol IDSAD Conditions Normal mode MIN. Notes 1, 2 converter Circuits that operate: ABGR, REGA, SBIAS, VREFAMP, PGA0, 24-bit ΔΣ operating A/D converter, and digital filter current Differential input mode, OSR = 256, SBIAS IOUT = 0 mA Low power mode Notes 1, 2 TYP. MAX. Unit 0.94 1.46 mA 0.60 0.91 mA 0.60 1.10 mA 1.10 1.80 mA 0.10 0.15 mA 0.30 0.48 mA 0.10 0.14 mA 0.23 0.35 mA 1.00 1.50 mA 0.85 1.30 mA 0.61 0.97 mA 1.06 1.62 mA 0.91 1.42 mA Circuits that operate: ABGR, REGA, SBIAS, VREFAMP, PGA0, 24-bit ΔΣ A/D converter, and digital filter Differential input mode, OSR = 256, SBIAS IOUT = 0 mA Amplifier IPGA1 Low power mode Notes 1, 2 operating Circuits that operate: ABGR, PGA1, and DAC1 current IL = 0 mA High-speed mode Notes 1, 2 Circuits that operate: ABGR, PGA1, and DAC1 IL = 0 mA IAMP0 Low power mode Notes 1, 2 Circuits that operate: ABGR and AMP0 IL = 0 mA High-speed mode Notes 1, 2 Circuits that operate: ABGR and AMP0 IL = 0 mA IAMP1, Low power mode Notes 1, 2 IAMP2 Circuits that operate: ABGR and AMP1 or AMP2 IL = 0 mA High-speed mode Notes 1, 2 Circuits that operate: ABGR and AMP1 or AMP2 IL = 0 mA 8-bit D/A IDAC0 SBIAS normal mode Notes 1, 2 converter Circuits that operate: ABGR, REGA, SBIAS, and DAC0 Note 3 operating IL = 0 mA, SBIAS IOUT = 0 mA current SBIAS low-power mode Notes 1, 2 Circuits that operate: ABGR, REGA, SBIAS, and DAC0 Note 3 IL = 0 mA, SBIAS IOUT = 0 mA 12-bit D/A IDAC1 When AVDD is selected as the reference voltage Notes 1, 2 converter Circuits that operate: ABGR and DAC1 operating IL = 0 mA current When SBIAS (normal mode) is selected as the reference voltage Notes 1, 2 Circuits that operate: ABGR, REGA, SBIAS, and DAC1 Note 3 IL = 0 mA, SBIAS IOUT = 0 mA When SBIAS (low-power mode) is selected as the reference voltage Notes 1, 2 Circuits that operate: ABGR, REGA, SBIAS, and DAC1 Note 3 IL = 0 mA, SBIAS IOUT = 0 mA Note 1. Current flowing to AVDD. The typical conditions are the conditions when TA = 25°C and AVDD = 3.3 V. Note 2. Current flowing only into the operating circuit indicated in the column for conditions. Note 3. Including the static current of VREFAMP, PGA0, and 24-bit ΔΣ A/D converter. Remark Values in parentheses are target design values (i.e. not guaranteed) and therefore are not tested for shipment. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 36 of 143 RL78/H1D 2.4 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) AC Characteristics 2.4.1 Basic operation (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Items MAX. Unit Main system HS (high-speed main) 2.7 V ≤ VDD ≤ 5.5 V 0.0417 1 µs (minimum instruction clock (fMAIN) mode 2.4 V ≤ VDD < 2.7 V 0.0625 1 µs execution time) operation fXT =32.768 kHz 2.4 V ≤ VDD ≤ 5.5 V 28.5 31.3 µs HS (high-speed main) 2.7 V ≤ VDD ≤ 5.5 V 0.0417 1 µs 2.4 V ≤ VDD < 2.7 V 0.0625 1 µs Instruction cycle Symbol TCY Conditions Subsystem MIN. TYP. 30.5 clock (fSUB) operation In the self- programming mode mode External main system fEX EXCLK clock frequency fEXT EXCLKS External main system tEXH, EXCLK clock input high-level tEXL width, low-level width tEXHS, 2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 MHz 2.4 V ≤ VDD < 2.7 V 1.0 16.0 MHz 32 35 kHz 2.7 V ≤ VDD ≤ 5.5 V 2.4 V ≤ VDD < 2.7 V EXCLKS 24 ns 30 ns 13.7 µs 1/fMCK + ns tEXLS Timer input tTIH, high-level width, tTIL TI00 to TI07 10 low-level width Timer output fTO frequency Buzzer output fPCL frequency TO00 to HS (high-speed main) 4.0 V ≤ VDD ≤ 5.5 V 12 MHz TO07 mode 2.7 V ≤ VDD < 4.0 V 8 MHz 2.4 V ≤ VDD < 2.7 V 4 MHz PCLBUZ0, HS (high-speed main) 4.0 V ≤ VDD ≤ 5.5 V 12 MHz PCLBUZ1 mode 2.7 V ≤ VDD < 4.0 V 8 MHz 4 MHz 2.4 V ≤ VDD < 2.7 V Interrupt input high- tINTH, level width, low-level tINTL INTP0 to INTP7 2.4 V ≤ VDD ≤ 5.5 V 1 µs 10 µs width RESET low-level tRSL width Remark fMCK: Timer array unit operation clock frequency (Operation clock to be set by the CKSmn bit of timer mode register mn (TMRmn). m: Unit number (m = 0), n: Channel number (n = 0 to 7)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 37 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Minimum Instruction Execution Time during Main System Clock Operation TCY vs VDD (HS (high-speed main) mode) 10 1.0 Cycle time TCY [µs] When the high-speed on-chip oscillator clock is selected During self programming When high-speed system clock is selected 0.1 0.0625 0.05 0.0417 0.01 0 1.0 2.0 3.0 2.4 2.7 4.0 5.0 5.5 6.0 Supply voltage VDD [V] R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 38 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) AC Timing Test Points VIH/VOH VIH/VOH Test points VIL/VOL VIL/VOL External System Clock Timing 1/fEX 1/fEXS tEXL tEXLS tEXH tEXHS EXCLK/EXCLKS TI/TO Timing tTIL tTIH TI00 to TI07 1/fTO TO00 to TO07 Interrupt Request Input Timing tINTH tINTL INTP0 to INTP7 RESET Input Timing tRSL RESET R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 39 of 143 RL78/H1D 2.5 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Peripheral Functions Characteristics 2.5.1 Serial array unit (1) During communication at same potential (UART mode) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol HS (high-speed main) Mode Conditions MIN. 2.4 V ≤ VDD ≤ 5.5 V Transfer rate Note 1 MAX. Unit fMCK/6 Note 2 bps 4.0 Mbps Theoretical value of the maximum transfer rate fMCK = fCLK Note 3 Note 1. Note 2. Note 3. Caution Transfer rate in the SNOOZE mode is 4800 bps only. The following conditions are required for low voltage interface. 2.4 V ≤ VDD < 2.7 V: MAX. 2.6 Mbps The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are: HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V) 16 MHz (2.4 V ≤ VDD ≤ 5.5 V) Select the normal input buffer for the RxDq pin and the normal output mode for the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). UART mode connection diagram (during communication at same potential) TxDq Rx RL78 microcontroller User’s device RxDq Tx UART mode bit width (during communication at same potential) (reference) 1/Transfer rate High-/Low-bit width Baud rate error tolerance TxDq RxDq Remark 1. q: UART number (q = 0 to 2), g: PIM and POM number (g = 0, 1, 3, 4, 5, 8) Remark 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00 to 03, 10, 11)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 40 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (2) During communication at same potential (CSI mode) (master mode, SCKp... internal clock output) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. SCKp cycle time tKCY1 SCKp high-/low-level width tKH1, tKCY1 ≥ fCLK/4 2.7 V ≤ VDD ≤ 5.5 V 2.4 V ≤ VDD ≤ 5.5 V tKL1 SIp setup time (to SCKp↑) tSIK1 Note 1 tKSI1 SIp hold time (from SCKp↑) Note 2 Delay time from SCKp↓ to SOp output Note 1. Note 2. Note 3. Note 4. Caution Note 3 tKSO1 Unit MAX. 167 ns 250 ns 4.0 V ≤ VDD ≤ 5.5 V tKCY1/2 - 12 ns 2.7 V ≤ VDD ≤ 5.5 V tKCY1/2 - 18 ns 2.4 V ≤ VDD ≤ 5.5 V tKCY1/2 - 38 ns 4.0 V ≤ VDD ≤ 5.5 V 44 ns 2.7 V ≤ VDD ≤ 5.5 V 44 ns 2.4 V ≤ VDD ≤ 5.5 V 75 ns 2.4 V ≤ VDD ≤ 5.5 V 19 ns C = 20 pF Note 4 2.7 V ≤ VDD ≤ 5.5 V 25 ns 2.4 V ≤ VDD ≤ 5.5 V 25 ns When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. C is the load capacitance of the SCKp and SOp output lines. Select the normal input buffer for the SIp pin and the normal output mode for the SOp pin and SCKp pin by using port input mode register g (PIMg) and port output mode register g (POMg). Remark 1. p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIM and POM number (g = 0, 1, 3, 4, 5, 8) Remark 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00, 02, 10)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 41 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (3) During communication at same potential (CSI mode) (slave mode, SCKp... external clock output) (1/2) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol tKCY2 SCKp cycle time Note 5 Conditions 4.0 V ≤ VDD ≤ 5.5 V tKH2, tKL2 SIp setup time (to SCKp↑) Note 1 SIp hold time (from SCKp↑) Note 2 tSIK2 tKSI2 Delay time from SCKp↓ to SOp output Note 3 tKSO2 Note 1. Note 2. Note 3. Note 4. Note 5. Caution MIN. MAX. Unit 20 MHz < fMCK 8/fMCK ns fMCK ≤ 20 MHz 8/fMCK ns fMCK > 16 MHz 8/fMCK ns fMCK ≤ 16 MHz 6/fMCK ns 2.4 V ≤ VDD ≤ 5.5 V 6/fMCK and 500 ns 4.0 V ≤ VDD ≤ 5.5 V tKCY2/2 - 7 ns 2.7 V ≤ VDD ≤ 5.5 V tKCY2/2 - 8 ns 2.7 V ≤ VDD ≤ 5.5 V SCKp high-/low-level width HS (high-speed main) Mode 2.4 V ≤ VDD ≤ 5.5 V tKCY2/2 - 18 ns 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + 20 ns 2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 30 ns 2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 31 ns C = 30 pF Note 4 2.7 V ≤ VDD ≤ 5.5 V 2/fMCK + 44 ns 2.4 V ≤ VDD ≤ 5.5 V 2/fMCK + 75 ns When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. C is the load capacitance of the SCKp and SOp output lines. The maximum transfer rate when using the SNOOZE mode is 1 Mbps. Select the normal input buffer for the SIp pin and the normal output mode for the SOp pin and SCKp pin by using port input mode register g (PIMg) and port output mode register g (POMg). Remark 1. p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIM and POM number (g = 0, 1, 3, 4, 5, 8) Remark 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00, 02, 10)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 42 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (3) During communication at same potential (CSI mode) (slave mode, SCKp... external clock output) (2/2) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol tKSSI Caution MAX. Unit 120 ns 2.4 V ≤ VDD ≤ 5.5 V 200 ns 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + 120 ns 2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 200 ns DAPmn = 0 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + 120 ns 2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 200 ns DAPmn = 1 2.7 V ≤ VDD ≤ 5.5 V 120 ns 2.4 V ≤ VDD ≤ 5.5 V 200 ns DAPmn = 1 SSI00 hold time MIN. 2.7 V ≤ VDD ≤ 5.5 V DAPmn = 0 tSSIK SSI00 setup time HS (high-speed main) Mode Conditions Select the normal input buffer for the SIp pin and SCKp pin and the normal output mode for the SOp pin by using port input mode register g (PIMg) and port output mode register g (POMg). Remark p: CSI number (p = 00), m: Unit number (m = 0), n: Channel number (n = 0), g: PIM and POM number (g = 3, 4) CSI mode connection diagram (during communication at same potential) SCKp RL78 SIp microcontroller SOp SCK SO User's device SI CSI mode connection diagram (during communication at same potential) (Slave Transmission of slave select input function (CSI00)) SCK00 RL78 microcontroller Remark SCK SI00 SO SO00 SI SSI00 SSO User's device p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 43 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) CSI mode serial transfer timing (during communication at same potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.) tKCY1, 2 tKH1, 2 tKL1, 2 SCKp tSIK1, 2 SIp tKSI1, 2 Input data tKSO1, 2 Output data SOp CSI mode serial transfer timing (during communication at same potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) tKCY1, 2 tKL1, 2 tKH1, 2 SCKp tSIK1, 2 SIp tKSI1, 2 Input data tKSO1, 2 SOp Remark Output data p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 44 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (4) During communication at same potential (simplified I2C mode) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol HS (high-speed main) Mode Conditions MIN. SCLr clock frequency fSCL 2.7 V ≤ VDD ≤ 5.5 V, Unit MAX. 1000 Note 1 kHz 400 Note 1 kHz 300 Note 1 kHz Cb = 50 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ 2.4 V ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Hold time tLOW when SCLr = “L” 2.7 V ≤ VDD ≤ 5.5 V, 475 ns 1150 ns 1550 ns 475 ns 1150 ns 1550 ns 1/fMCK + 85 Note 2 ns 1/fMCK + 145 Note 2 ns 1/fMCK + 230 Note 2 ns Cb = 50 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ 2.4 V ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Hold time tHIGH 2.7 V ≤ VDD ≤ 5.5 V, Cb = 50 pF, Rb = 2.7 kΩ when SCLr = “H” 2.4 V ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ 2.4 V ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Data setup time (reception) tSU: DAT 2.7 V ≤ VDD ≤ 5.5 V, Cb = 50 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ 2.4 V ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Data hold time (transmission) tHD: DAT 2.7 V ≤ VDD ≤ 5.5 V, 0 305 ns 0 355 ns 0 405 ns Cb = 50 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ 2.4 V ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Note 1. Note 2. Caution The value must be equal to or less than fMCK/4. Set the fMCK value to keep the hold time of SCLr = “L” and SCLr = “H”. Select the normal input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin and the normal output mode for the SCLr pin by using port input mode register g (PIMg) and port output mode register h (POMh). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 45 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Simplified I2C mode connection diagram (during communication at same potential) VDD Rb SDAr SDA RL78 microcontroller User’s device SCLr SCL Simplified I2C mode serial transfer timing (during communication at same potential) 1/fSCL tLOW tHIGH SCLr SDAr tHD: DAT tSU: DAT Remark 1. Rb[Ω]: Communication line (SDAr) pull-up resistance, Cb[F]: Communication line (SCLr, SDAr) load capacitance Remark 2. r: IIC number (r = 00, 10, 20), g: PIM number (g = 0, 1, 3, 4, 5, 8), Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), mn = 00, 02, 10) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 46 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (5) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) (1/2) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. Transfer rate reception 4.0 V ≤ VDD ≤ 5.5 V, Unit MAX. fMCK/6 Note 1 bps 4.0 Mbps fMCK/6 Note 1 bps 4.0 Mbps fMCK/6 Notes 1, 2, 3 bps 4.0 Mbps 2.7 V ≤ Vb ≤ 4.0 V Theoretical value of the maximum transfer rate fMCK = fCLK Note 4 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V Theoretical value of the maximum transfer rate fMCK = fCLK Note 4 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Theoretical value of the maximum transfer rate fMCK = fCLK Note 4 Note 1. Note 2. Note 3. Note 4. Caution Transfer rate in the SNOOZE mode is 4,800 bps only. Use it with VDD ≥ Vb. The following conditions are required for low voltage interface. 2.4 V ≤ VDD < 2.7 V: MAX. 2.6 Mbps The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are: HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V) 16 MHz (2.4 V ≤ VDD ≤ 5.5 V) Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. Remark 1. Vb[V]: Communication line voltage Remark 2. q: UART number (q = 0 to 2), g: PIM and POM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00 to 03, 10, 11)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 47 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (5) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) (2/2) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol HS (high-speed main) Mode Conditions MIN. Transfer rate transmission 4.0 V ≤ VDD ≤ 5.5 V, Unit MAX. Note 1 bps 2.8 Note 2 Mbps Note 3 bps 1.2 Note 4 Mbps Notes 5, 6 bps 2.7 V ≤ Vb ≤ 4.0 V Theoretical value of the maximum transfer rate Cb = 50 pF, Rb = 1.4 kΩ, Vb = 2.7 V 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V Theoretical value of the maximum transfer rate Cb = 50 pF, Rb = 2.7 kΩ, Vb = 2.3 V 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Theoretical value of the maximum transfer rate 0.43 Note 7 Mbps Cb = 50 pF, Rb = 5.5 kΩ, Vb = 1.6 V Note 1. The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 4.0 V ≤ VDD ≤ 5.5 V and 2.7 V ≤ Vb ≤ 4.0 V 1 Maximum transfer rate = 2.2 )} × 3 {-Cb × Rb × In (1 Vb 1 Transfer rate × 2 [bps] - {-Cb × Rb × In (1 - 2.2 )} Vb × 100 [%] Baud rate error (theoretical value) = ( 1 Transfer rate ) × Number of transferred bits * This value is the theoretical value of the relative difference between the transmission and reception sides. Note 2. Note 3. This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 1 above to calculate the maximum transfer rate under conditions of the customer. The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 2.7 V ≤ VDD ≤ 4.0 V and 2.3 V ≤ Vb ≤ 2.7 V 1 Maximum transfer rate = {-Cb × Rb × In (1 - 2.0 Vb [bps] )} × 3 1 Transfer rate × 2 - {-Cb × Rb × In (1 - 2.0 )} Vb × 100 [%] Baud rate error (theoretical value) = ( 1 Transfer rate ) × Number of transferred bits * This value is the theoretical value of the relative difference between the transmission and reception sides. Note 4. Note 5. This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 3 above to calculate the maximum transfer rate under conditions of the customer. Use it with VDD ≥ Vb. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 48 of 143 RL78/H1D Note 6. 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 2.4 V ≤ VDD < 3.3 V and 1.6 V ≤ Vb ≤ 2.0 V 1 Maximum transfer rate = {-Cb × Rb × In (1 - 1.5 Vb [bps] )} × 3 1 Transfer rate × 2 - {-Cb × Rb × In (1 - 1.5 )} Vb × 100 [%] Baud rate error (theoretical value) = ( 1 Transfer rate ) × Number of transferred bits * This value is the theoretical value of the relative difference between the transmission and reception sides. Note 7. Caution This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 6 above to calculate the maximum transfer rate under conditions of the customer. Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 49 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) UART mode connection diagram (during communication at different potential) Vb Rb Rx TxDq RL78 microcontroller User’s device Tx RxDq UART mode bit width (during communication at different potential) (reference) 1/Transfer rate Low-bit width High-bit width Baud rate error tolerance TxDq 1/Transfer rate High-/Low-bit width Baud rate error tolerance RxDq Remark 1. Rb[Ω]: Communication line (TxDq) pull-up resistance, Cb[F]: Communication line (TxDq) load capacitance, Vb[V]: Communication line voltage Remark 2. q: UART number (q = 0 to 2), g: PIM and POM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00 to 03, 10, 11)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 50 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (1/2) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. SCKp cycle time tKCY1 tKCY1 ≥ 4/fCLK 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Unit MAX. 300 ns 500 Note ns 1150 Note ns tKCY1/2 - 75 ns tKCY1/2 - 170 ns tKCY1/2 - 458 ns tKCY1/2 - 12 ns tKCY1/2 - 18 ns tKCY1/2 - 50 ns Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ SCKp high-level tKH1 width 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ SCKp low-level tKL1 width 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ Note Caution Use it with VDD ≥ Vb. Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the SOp pin and SCKp pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. (Remarks are listed on the page after the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 51 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (2/2) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol HS (high-speed main) Mode Conditions MIN. SIp setup time tSIK1 (to SCKp↑) Note 1 SIp hold time tKSI1 (from SCKp↑) Note 1 Delay time from tKSO1 SCKp↓ to SOp output Note 1 tSIK1 (to SCKp↓) Note 2 SIp hold time tKSI1 (from SCKp↓) Note 2 Delay time from tKSO1 SCKp↑ to SOp output Note 2 Note 1. Note 2. Note 3. Caution 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 81 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 177 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 3, Cb = 30 pF, Rb = 5.5 kΩ 479 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 19 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 19 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 3, Cb = 30 pF, Rb = 5.5 kΩ 19 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 100 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 195 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V SIp setup time Unit MAX. Note 3, 483 Cb = 30 pF, Rb = 5.5 kΩ ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 44 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 44 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 3, Cb = 30 pF, Rb = 5.5 kΩ 110 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 19 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 19 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 3, Cb = 30 pF, Rb = 5.5 kΩ 19 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 25 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 25 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V 25 ns Note 3, Cb = 30 pF, Rb = 5.5 kΩ When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. Use it with VDD ≥ Vb. Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the SOp pin and SCKp pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. (Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 52 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) CSI mode connection diagram (during communication at different potential) Vb Vb Rb SCKp RL78 SIp microcontroller SOp Rb SCK SO User’s device SI Remark 1. Rb[Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb[F]: Communication line (SCKp, SOp) load capacitance, Vb[V]: Communication line voltage Remark 2. p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIM and POM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00, 02, 10)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 53 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) CSI mode serial transfer timing (master mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.) tKCY1 tKL1 tKH1 SCKp tSIK1 tKSI1 Input data SIp tKSO1 Output data SOp CSI mode serial transfer timing (master mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) tKCY1 tKH1 tKL1 SCKp tSIK1 SIp tKSI1 Input data tKSO1 SOp Remark Output data p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIM and POM number (g = 0, 1, 3, 4, 5, 8) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 54 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (7) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (slave mode, SCKp... external clock input) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter SCKp cycle time Note 1 Symbol tKCY2 Conditions HS (high-speed main) Mode MIN. MAX. Unit 4.0 V ≤ VDD ≤ 5.5 V, 20 MHz < fMCK 12/fMCK ns 2.7 V ≤ Vb ≤ 4.0 V 8 MHz < fMCK ≤ 20 MHz 10/fMCK ns 4 MHz < fMCK ≤ 8 MHz 8/fMCK ns fMCK ≤ 4 MHz 6/fMCK ns 2.7 V ≤ VDD < 4.0 V, 20 MHz < fMCK 16/fMCK ns 2.3 V ≤ Vb ≤ 2.7 V 16 MHz < fMCK ≤ 20 MHz 14/fMCK ns 8 MHz < fMCK ≤ 16 MHz 12/fMCK ns 4 MHz < fMCK ≤ 8 MHz 8/fMCK ns fMCK ≤ 4 MHz 6/fMCK ns 2.4 V ≤ VDD < 3.3 V, 20 MHz < fMCK 36/fMCK ns 1.6 V ≤ Vb ≤ 2.0 V Note 2 16 MHz < fMCK ≤ 20 MHz 32/fMCK ns 8 MHz < fMCK ≤ 16 MHz 26/fMCK ns 4 MHz < fMCK ≤ 8 MHz 16/fMCK ns fMCK ≤ 4 MHz 10/fMCK ns SCKp high-/low-level tKH2, 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V tKCY2/2 - 12 ns width tKL2 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V tKCY2/2 - 18 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2 tKCY2/2 - 50 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V 1/fMCK + 20 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V 1/fMCK + 20 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2 1/fMCK + 30 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V 1/fMCK + 31 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V 1/fMCK + 31 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2 1/fMCK + 31 ns SIp setup time tSIK2 (to SCKp↑) Note 3 SIp hold time tKSI2 (from SCKp↑) Note 4 Delay time from SCKp↓ tKSO2 to SOp output Note 5 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V 2/fMCK + 120 ns 2/fMCK + 214 ns 2/fMCK + 573 ns Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2 Cb = 30 pF, Rb = 5.5 kΩ Note 1. Note 2. Note 3. Note 4. Note 5. Caution Transfer rate in the SNOOZE mode: MAX. 1 Mbps Use it with VDD ≥ Vb. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. Select the TTL input buffer for the SIp pin and SCKp pin and the N-ch open drain output (VDD tolerance) mode for the SOp pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. (Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 55 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) CSI mode connection diagram (during communication at different potential) Vb Rb SCKp RL78 SIp microcontroller SOp SCK SO User’s device SI Remark 1. Rb[Ω]: Communication line (SOp) pull-up resistance, Cb[F]: Communication line (SOp) load capacitance, Vb[V]: Communication line voltage Remark 2. p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIM and POM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00, 02, 10)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 56 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) CSI mode serial transfer timing (slave mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.) tKCY2 tKL2 tKH2 SCKp tSIK2 tKSI2 Input data SIp tKSO2 SOp Output data CSI mode serial transfer timing (slave mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) tKCY2 tKH2 tKL2 SCKp tSIK2 SIp tKSI2 Input data tKSO2 SOp Remark Output data p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIM and POM number (g = 0, 1, 3, 4, 5, 8) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 57 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter SCLr clock Symbol fSCL frequency tLOW when SCLr = “L” MIN. kHz 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 50 pF, Rb = 2.7 kΩ 1000 Note 1 kHz 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 400 Note 1 kHz 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 400 Note 1 kHz Note 1 kHz Note 2, Cb = 100 pF, Rb = 5.5 kΩ 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 50 pF, Rb = 2.7 kΩ when SCLr = “H” ns 2.7 V ≤ VDD ≤ 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 50 pF, Rb = 2.7 kΩ 475 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 1150 ns 1150 ns 1550 ns 245 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 50 pF, Rb = 2.7 kΩ 200 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 675 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 600 ns tSU:DAT (reception) Note 2, Cb = 100 pF, Rb = 5.5 kΩ 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 50 pF, Rb = 2.7 kΩ 610 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 50 pF, Rb = 2.7 kΩ 1/fMCK + 135 Note 3 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 50 pF, Rb = 2.7 kΩ 1/fMCK + 135 Note 3 ns ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Data setup time Note 2, Cb = 100 pF, Rb = 5.5 kΩ 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ Data hold time (transmission) tHD:DAT 400 475 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V tHIGH Unit 1000 Note 1 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ Hold time MAX. 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 50 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Hold time HS (high-speed main) Mode Conditions 1/fMCK + 190 Note 3 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 1/fMCK + 190 Note 3 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 100 pF, Rb = 5.5 kΩ 1/fMCK + 190 Note 3 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 50 pF, Rb = 2.7 kΩ 0 305 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 50 pF, Rb = 2.7 kΩ 0 305 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 0 355 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 0 355 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 100 pF, Rb = 5.5 kΩ 0 405 ns Note 3. The value must also be equal to or less than fMCK/4. Use it with VDD ≥ Vb. Set the fMCK value to keep the hold time of SCLr = “L” and SCLr = “H”. Caution Select the TTL input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin and the N-ch Note 1. Note 2. open drain output (VDD tolerance) mode for the SCLr pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. (Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 58 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Simplified I2C mode connection diagram (during communication at different potential) Vb Vb Rb Rb SDAr SDA RL78 microcontroller User’s device SCLr SCL Simplified I2C mode serial transfer timing (during communication at different potential) 1/fSCL tLOW tHIGH SCLr SDAr tHD: DAT tSU: DAT Remark 1. Rb[Ω]: Communication line (SDAr, SCLr) pull-up resistance, Cb[F]: Communication line (SDAr, SCLr) load capacitance, Vb[V]: Communication line voltage Remark 2. r: IIC number (r = 00, 10, 20), g: PIM, POM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), mn = 00, 02, 10) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 59 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) 2.5.2 Serial interface IICA (1) I2C standard mode (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter SCLA0 clock frequency Setup time of restart condition Hold time Note 1 Hold time Symbol fSCL tSU: STA tHD: STA tLOW when SCLA0 = “L” Hold time tHIGH when SCLA0 = “H” Data setup time (reception) Data hold time (transmission) Note 2 Setup time of stop condition Bus-free time Note 1. Note 2. Remark tSU: DAT tHD: DAT tSU: STO tBUF Conditions HS (high-speed main) Mode MIN. MAX. Unit Standard mode: 2.7 V ≤ VDD ≤ 5.5 V 0 100 kHz fCLK ≥ 1 MHz 2.4 V ≤ VDD ≤ 5.5 V 0 100 kHz 2.7 V ≤ VDD ≤ 5.5 V 4.7 µs 2.4 V ≤ VDD ≤ 5.5 V 4.7 µs 2.7 V ≤ VDD ≤ 5.5 V 4.0 µs 2.4 V ≤ VDD ≤ 5.5 V 4.0 µs 2.7 V ≤ VDD ≤ 5.5 V 4.7 µs 2.4 V ≤ VDD ≤ 5.5 V 4.7 µs 2.7 V ≤ VDD ≤ 5.5 V 4.0 µs 2.4 V ≤ VDD ≤ 5.5 V 4.0 µs 2.7 V ≤ VDD ≤ 5.5 V 250 ns 2.4 V ≤ VDD ≤ 5.5 V 250 ns 2.7 V ≤ VDD ≤ 5.5 V 0 2.4 V ≤ VDD ≤ 5.5 V 0 3.45 µs µs 2.7 V ≤ VDD ≤ 5.5 V 4.0 µs 2.4 V ≤ VDD ≤ 5.5 V 4.0 µs 2.7 V ≤ VDD ≤ 5.5 V 4.7 µs 2.4 V ≤ VDD ≤ 5.5 V 4.7 µs The first clock pulse is generated after this period when the start/restart condition is detected. The maximum value (MAX.) of tHD:DAT is during normal transfer and a wait state is inserted in the ACK (acknowledge) timing. The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up resistor) at that time in each mode are as follows. Standard mode: Cb = 400 pF, Rb = 2.7 kΩ R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 60 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (2) I2C fast mode (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter SCLA0 clock frequency Symbol fSCL Conditions Fast mode: 2.7 V ≤ VDD ≤ 5.5 V fCLK ≥ 3.5 MHz 2.4 V ≤ VDD ≤ 5.5 V HS (high-speed main) Mode Unit MIN. MAX. 0 400 kHz 0 400 kHz Setup time of restart condition tSU: STA 2.7 V ≤ VDD ≤ 5.5 V 0.6 µs 2.4 V ≤ VDD ≤ 5.5 V 0.6 µs Hold time Note 1 tHD: STA 2.7 V ≤ VDD ≤ 5.5 V 0.6 µs 2.4 V ≤ VDD ≤ 5.5 V 0.6 µs Hold time when SCLA0 = “L” tLOW 2.7 V ≤ VDD ≤ 5.5 V 1.3 µs 2.4 V ≤ VDD ≤ 5.5 V 1.3 µs Hold time when SCLA0 = “H” tHIGH 2.7 V ≤ VDD ≤ 5.5 V 0.6 µs 2.4 V ≤ VDD ≤ 5.5 V 0.6 µs Data setup time (reception) tSU: DAT 2.7 V ≤ VDD ≤ 5.5 V 100 ns 2.4 V ≤ VDD ≤ 5.5 V 100 Data hold time (transmission) Note 2 tHD: DAT 2.7 V ≤ VDD ≤ 5.5 V 0 2.4 V ≤ VDD ≤ 5.5 V 0 µs Setup time of stop condition tSU: STO 2.7 V ≤ VDD ≤ 5.5 V 0.6 µs 2.4 V ≤ VDD ≤ 5.5 V 0.6 µs Bus-free time tBUF 2.7 V ≤ VDD ≤ 5.5 V 1.3 µs 2.4 V ≤ VDD ≤ 5.5 V 1.3 µs Note 1. Note 2. Remark ns 0.9 µs The first clock pulse is generated after this period when the start/restart condition is detected. The maximum value (MAX.) of tHD: DAT is during normal transfer and a wait state is inserted in the ACK (acknowledge) timing. The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up resistor) at that time in each mode are as follows. Fast mode: Cb = 320 pF, Rb = 1.1 kΩ R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 61 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (3) I2C fast mode plus (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol SCLA0 clock frequency fSCL HS (high-speed main) Mode Conditions Fast mode plus: 2.7 V ≤ VDD ≤ 5.5 V MIN. MAX. 0 1000 Unit kHz fCLK ≥ 10 MHz Setup time of restart condition tSU: STA 2.7 V ≤ VDD ≤ 5.5 V 0.26 µs Hold time Note 1 tHD: STA 2.7 V ≤ VDD ≤ 5.5 V 0.26 µs Hold time when SCLA0 = “L” tLOW 2.7 V ≤ VDD ≤ 5.5 V 0.5 µs Hold time when SCLA0 = “H” tHIGH 2.7 V ≤ VDD ≤ 5.5 V 0.26 µs Data setup time (reception) tSU: DAT 2.7 V ≤ VDD ≤ 5.5 V 50 Data hold time (transmission) Note 2 tHD: DAT 2.7 V ≤ VDD ≤ 5.5 V 0 Setup time of stop condition tSU: STO 2.7 V ≤ VDD ≤ 5.5 V 0.26 µs Bus-free time tBUF 2.7 V ≤ VDD ≤ 5.5 V 0.5 µs Note 1. Note 2. Remark ns 0.45 µs The first clock pulse is generated after this period when the start/restart condition is detected. The maximum value (MAX.) of tHD: DAT is during normal transfer and a wait state is inserted in the ACK (acknowledge) timing. The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up resistor) at that time in each mode are as follows. Fast mode plus: Cb = 120 pF, Rb = 1.1 kΩ IICA serial transfer timing tR tLOW SCLn tHD: DAT tHD: STA tHIGH tF tSU: STA tHD: STA tSU: STO tSU: DAT SDAn tBUF Stop condition Start condition R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Restart condition Stop condition Page 62 of 143 RL78/H1D 2.6 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Analog Characteristics 2.6.1 A/D converter characteristics (1) When reference voltage (+) = VDD (ADREFP1 = 0, ADREFP0 = 0), reference voltage (-) = VSS (ADREFM = 0), target pin: ANI8 to ANI14, internal reference voltage, and temperature sensor output voltage (TA = –40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, reference voltage (+) = VDD, reference voltage (–) = VSS) Parameter Symbol Conditions MIN. Resolution RES Overall error Note 1 AINL 10-bit resolution 2.4 V ≤ VDD ≤ 5.5 V Conversion time tCONV 10-bit resolution 3.6 V ≤ VDD ≤ 5.5 V Target pin: ANI8 to ANI14 2.7 V ≤ VDD ≤ 5.5 V MAX. Unit 10 bit ±7.0 LSB 2.125 39 μs 3.1875 39 μs 1.2 2.4 V ≤ VDD ≤ 5.5 V 17 39 μs 10-bit resolution 3.6 V ≤ VDD ≤ 5.5 V 2.375 39 μs Target pin: internal reference voltage and 2.7 V ≤ VDD ≤ 5.5 V 3.5626 39 μs 2.4 V ≤ VDD ≤ 5.5 V 17 39 μs temperature sensor output voltage (HS (high-speed main) mode) Zero-scale error TYP. 8 EZS 10-bit resolution 2.4 V ≤ VDD ≤ 5.5 V ±0.60 %FSR EFS 10-bit resolution 2.4 V ≤ VDD ≤ 5.5 V ±0.60 %FSR ILE 10-bit resolution 2.4 V ≤ VDD ≤ 5.5 V ±4.0 LSB DLE 10-bit resolution 2.4 V ≤ VDD ≤ 5.5 V ±2.0 LSB VAIN ANI8 to ANI11 0 VDD V ANI12 to ANI14 0 AVDD V Notes 1, 2 Full-scale error Notes 1, 2 Integral linearity error Note 1 Differential linearity error Note 1 Analog input voltage Internal reference voltage VBGR Note 3 V VTMPS25 Note 3 V (2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode) Temperature sensor output voltage (2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode) Note 1. Note 2. Note 3. Excludes quantization error (±1/2 LSB). This value is indicated as a ratio (%FSR) to the full-scale value. Refer to 2.6.2 Temperature sensor/internal reference voltage output characteristics. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 63 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (2) When reference voltage (+) = Internal reference voltage (ADREFP1 = 1, ADREFP0 = 0), reference voltage (-) = VSS (ADREFM = 0), target pin: ANI8 to ANI11, ANI12 to ANI14 (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, reference voltage (+) = VBGR Note 3, reference voltage (–) = VSS = 0 V, HS (high-speed main) mode) Parameter Symbol Resolution RES Conversion time tCONV Conditions MIN. TYP. MAX. Unit 39 μs 8 8-bit resolution 2.4 V ≤ VDD ≤ 5.5 V 17 bit EZS 8-bit resolution 2.4 V ≤ VDD ≤ 5.5 V ±(0.60 + 0.35) %FSR ILE 8-bit resolution 2.4 V ≤ VDD ≤ 5.5 V ±(2.0 + 0.5) LSB Differential linearity error Note 1 DLE 8-bit resolution 2.4 V ≤ VDD ≤ 5.5 V ±(1.0 + 0.2) LSB Analog input voltage VAIN VBGR Note 3 V Zero-scale error Notes 1, 2 Integral linearity error Note 1. Note 2. Note 3. 2.6.2 Note 1 0 Excludes quantization error (±1/2 LSB). This value is indicated as a ratio (%FSR) to the full-scale value. Refer to 2.6.2 Temperature sensor/internal reference voltage output characteristics. Temperature sensor/internal reference voltage output characteristics (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, HS (high-speed main) mode) Parameter Symbol Temperature sensor output voltage VTMPS25 Conditions TYP. 1.38 1.45 TA = +25°C Internal reference voltage VBGR Temperature coefficient FVTMPS Temperature sensor output voltage that depends on the temperature Operation stabilization wait time tAMP 2.4 V ≤ VDD ≤ 5.5 V R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 MIN. MAX. Unit 1.5 V 1.05 -3.6 5 V mV/°C µs Page 64 of 143 RL78/H1D 2.6.3 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) POR circuit characteristics (TA = -40 to +85°C, VSS = 0 V) Parameter Symbol Detection voltage VPOR Minimum pulse width Note 1. Note 2. Note 2 Conditions Power supply rise time MIN. TYP. MAX. Unit 1.47 1.51 1.55 V 1.46 1.50 1.54 V VPDR Power supply fall TPW1 Other than STOP/SUB HALT/SUB RUN 300 µs TPW2 STOP/SUB HALT/SUB RUN 300 µs timeNote 1 If the power supply voltage falls while the voltage detector is off, be sure to either shift to STOP mode or execute a reset by using the voltage detector or external reset pin before the power supply voltage falls below the minimum operating voltage specified in 2.4 AC Characteristics. Minimum time required for a POR reset when VDD falls below VPDR. This is also the minimum time required for a POR reset from when VDD exceeds below 0.7 V to when VDD exceeds VPOR while STOP mode is entered or the main system clock is stopped through setting bit 0 (HIOSTOP) and bit 7 (MSTOP) in the clock operation status control register (CSC). TPW1 TPW2 VDD VPDR VPOR 0.7 V R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 65 of 143 RL78/H1D 2.6.4 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) LVD circuit characteristics (1) LVD Detection Voltage of Reset Mode and Interrupt Mode (TA = -40 to +85°C, VPDR ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Detection voltage Supply voltage level Symbol VLVD0 VLVD1 VLVD2 VLVD3 VLVD4 VLVD5 VLVD6 VLVD7 VLVD8 Minimum pulse width MIN. TYP. MAX. Unit Power supply rise time Conditions 3.98 4.06 4.14 V Power supply fall time 3.90 3.98 4.06 V Power supply rise time 3.68 3.75 3.82 V Power supply fall time 3.60 3.67 3.74 V Power supply rise time 3.07 3.13 3.19 V Power supply fall time 3.00 3.06 3.12 V Power supply rise time 2.96 3.02 3.08 V Power supply fall time 2.90 2.96 3.02 V Power supply rise time 2.86 2.92 2.97 V Power supply fall time 2.80 2.86 2.91 V Power supply rise time 2.76 2.81 2.87 V Power supply fall time 2.70 2.75 2.81 V Power supply rise time 2.66 2.71 2.76 V Power supply fall time 2.60 2.65 2.70 V Power supply rise time 2.56 2.61 2.66 V Power supply fall time 2.50 2.55 2.60 V Power supply rise time 2.45 2.50 2.55 V Power supply fall time 2.40 2.45 2.50 V tLW Detection delay time Caution 300 µs 300 µs Set the detection voltage (VLVD) to be within the operating voltage range. The operating voltage range depends on the setting of the user option byte (000C2H/010C2H). The following shows the operating voltage range. HS (high-speed main) mode: VDD = 2.7 to 5.5 V @ 1 MHz to 24 MHz VDD = 2.4 to 5.5 V @ 1 MHz to 16 MHz R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 66 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (2) LVD Detection Voltage of Interrupt & Reset Mode (TA = -40 to +85°C, VPDR ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Interrupt and reset mode Symbol VLVDC0 VLVDC1 VLVDC2 VLVDC3 VLVDD0 VLVDD1 Conditions MIN. TYP. MAX. Unit 2.40 2.45 2.50 V Rising release reset voltage 2.56 2.61 2.66 V Falling interrupt voltage 2.50 2.55 2.60 V VPOC2, VPOC1, VPOC0 = 0, 1, 0, falling reset voltage: 2.4 V LVIS1, LVIS0 = 1, 0 LVIS1, LVIS0 = 0, 1 LVIS1, LVIS0 = 0, 0 Rising release reset voltage 2.66 2.71 2.76 V Falling interrupt voltage 2.60 2.65 2.70 V Rising release reset voltage 3.68 3.75 3.82 V Falling interrupt voltage 3.60 3.67 3.74 V VPOC2, VPOC1, VPOC0 = 0, 1, 1, falling reset voltage: 2.7 V LVIS1, LVIS0 = 1, 0 2.70 2.75 2.81 V Rising release reset voltage 2.86 2.92 2.97 V Falling interrupt voltage 2.80 2.86 2.91 V VLVDD2 LVIS1, LVIS0 = 0, 1 Rising release reset voltage 2.96 3.02 3.08 V Falling interrupt voltage 2.90 2.96 3.02 V VLVDD3 LVIS1, LVIS0 = 0, 0 Rising release reset voltage 3.98 4.06 4.14 V Falling interrupt voltage 3.90 3.98 4.06 V R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 67 of 143 RL78/H1D 2.6.5 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Programmable gain instrumentation amplifier and 24-bit ΔΣ A/D converter (1) Analog input in differential input mode (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, normal mode: fs1 = 1 MHz, FDATA1 = 3.90625 ksps, low-power mode: fs2 = 0.125 MHz, FDATA2 = 488.28125 sps, SBIAS = 2.1 V, dOFR = 0 mV, VCOM = 1.0 V, external clock input used) Parameter Full-scale differential Symbol VID Conditions VID = (PGA0xP - PGA0xN) (x = 0, 1) MIN. TYP. MAX. Unit ― ±800 /GTOTAL0 ― mV input voltage range Input voltage range VI Common mode input VCOM dOFR = 0 mV Input bias current IIN Input offset current IINO 0.2 ― 1.8 V 0.2+(|VID|x GSET01)/2 ― 1.8-(|VID|x GSET01)/2 V VI = 1.0 V ±50 nA VI = 1.0 V ±20 nA voltage range (2) Analog input in single-ended input mode (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, normal mode: fs1 = 1 MHz, FDATA1 = 3.90625 ksps, low-power mode: fs2 = 0.125 MHz, FDATA2 = 488.28125 sps, SBIAS = 2.1 V, dOFR = 0 mV, VCOM = 1.0 V, external clock input used) Parameter Symbol Input voltage range VI Input bias current IIN Conditions MIN. TYP. 0.2 ― VI = 1.0 V MAX. Unit 1.8 V ±50 nA (3) Programmable gain instrumentation amplifier and 24-bit ΔΣ A/D converter (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, normal mode: fs1 = 1 MHz, FDATA1 = 3.90625 ksps, low-power mode: fs2 = 0.125 MHz, FDATA2 = 488.28125 sps, SBIAS = 2.1 V, dOFR = 0 mV, VCOM = 1.0 V, external clock input used, in differential input mode) Parameter Symbol Conditions (1/2) MIN. TYP. MAX. Resolution RES Sampling frequency fs1 Normal mode fs2 Low-power mode fDATA1 Normal mode 0.488 15.625 fDATA2 Low-power mode 61.035 1953.125 sps GTOTAL0 GTOTAL0 = GSET01 x GSET02 1 64 V/V Output data rate Gain setting range 24 Unit 1 bit MHz 0.125 MHz ksps 1st gain setting range GSET01 1, 2, 3, 4, 8 V/V 2nd gain setting range GSET02 1, 2, 4, 8 V/V Offset adjustment bit dOFFB 5 bit range Offset adjustment range dOFR Referred to input Offset adjustment steps dOFS Referred to input R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 - 164/GSET01 + 164/GSET01 11/GSET01 mV mV Page 68 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, normal mode: fs1 = 1 MHz, FDATA1 = 3.90625 ksps, low-power mode: fs2 = 0.125 MHz, FDATA2 = 488.28125 sps, SBIAS = 2.1 V, dOFR = 0 mV, VCOM = 1.0 V, external clock input used, in differential input mode) Parameter Gain error Symbol EG0 Conditions (2/2) MIN. TA = 25°C TYP. MAX. Unit ±0.2 ±2.7 % GSET01 = 1, GSET02 = 1 Excluding SBIAS error ±0.1 TA = 25°C % GSET01 = 8, GSET02 = 4 Excluding SBIAS error Gain drift Note dEG0 GSET01 = 1, GSET02 = 1 (5.6) (22.0) ppm/°C Excluding SBIAS drift GSET01 = 8, GSET02 = 4 (9.1) ppm/°C Excluding SBIAS drift Offset error EOS0 ±0.32 TA = 25°C ±2.90 mV GSET01 = 1, GSET02 = 1 Referred to input ±0.03 TA = 25°C mV GSET01 = 8, GSET02 = 4 Referred to input Offset drift Note dEOS GSET01 = 1, GSET02 = 1 (±0.02) (±6.00) μV/°C Referred to input GSET01 = 8, GSET02 = 4 (±0.02) μV/°C (82) (85) dB (73) (80) dB GSET01 = 1, GSET02 = 1, OSR = 2048 (13) μVRms GSET01 = 8, GSET02 = 4, OSR = 2048 (0.6) μVRms INL GSET01 = 1, GSET02 = 1, OSR = 2048 (±10) ppmFS CMRR0 VCOM = 1.0±0.8 V, fin = 50 Hz (72) (90) dB (60) (85) dB 3.8 4.0 Referred to input SND ratio SNDR GSET01 = 1, GSET02 = 1, fin = 50 Hz Normal mode, Pin = -1 dBFS GSET01 = 8, GSET02 = 4, fin = 50 Hz Normal mode, Pin = -1 dBFS Noise Vn Integral non-linearity error Common mode rejection ratio GSET01 = 1, GSET02 = 1 Power supply rejection PSRR0 AVDD = 2.7 to 5.5 V, GSET01 = 1, GSET02 = 1 ratio ΔΣ A/D converter input fADC 4.2 MHz clock frequency Note Calculate the gain drift and offset drift by using the following expression (for 85°C products): For gain drift: (MAX(EG(T(-40) to T(85))) - MIN(EG(T(-40) to T(85)))) / (85°C -(-40°C)) For offset drift: (MAX(EOS(T(-40) to T(85))) - MIN(EOS(T(-40) to T(85)))) / (85°C -(-40°C)) MAX(EG(T(-40) to T(85))): The maximum value of gain error when the temperature range is -40°C to 85°C MIN(EG(T(-40) to T(85))): The minimum value of gain error when the temperature range is -40°C to 85°C MAX(EOS(T(-40) to T(85))): The maximum value of offset error when the temperature range is -40°C to 85°C MIN(EOS(T(-40) to T(85))):The minimum value of offset error when the temperature range is -40°C to 85°C Remark 1. Values in parentheses are target design values (i.e. not guaranteed) and therefore are not tested for shipment. Remark 2. The typical conditions are the conditions when TA = 25°C and AVDD = 3.3 V. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 69 of 143 RL78/H1D 2.6.6 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Sensor power supply (SBIAS) (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, COUT = 0.22 μF, VOUT = 1.0 V) Parameter Symbol Output voltage range VOUT Output voltage adjustment steps VSTEP Output voltage precision VA Maximum output current IOUT Conditions MIN. TYP. 0.5 MAX. 2.2 V 0.1 IOUT = 1 mA (- 3) V (+ 3) 5 Short circuit current ISHORT VOUT = 0 V Load regulation LR 1 mA ≤ IOUT ≤ 5 mA Power supply rejection ratio PSRR AVDD = 5.0 V + 0.1 Vpp ripple f = 100 Hz, IOUT = 2.5 mA, VOUT = 2.1 V % mA 40 (45) Unit 65 mA (15) mV (70) dB Remark 1. Values in parentheses are target design values (i.e. not guaranteed) and therefore are not tested for shipment. Remark 2. The typical conditions are the conditions when TA = 25°C and AVDD = 3.3 V. 2.6.7 Internal BIAS power supply (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Output voltage Remark Symbol Conditions VBIAS MIN. TYP. MAX. Unit 0.95 1.00 1.05 V The typical conditions are the conditions when TA = 25°C and AVDD = 3.3 V. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 70 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) 2.6.8 Programmable gain instrumentation amplifier (PGA1) (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions (1/2) MIN. VID = (PGA1xP - PGA1xN) (x = 0, 1) TYP. MAX. ±800 /GTOTAL1 Unit mV Differential input voltage range VID Input voltage range VIN 0.3 AVDD - 0.6 V Common mode input voltage range VCOM 0.3+ ((|VID|+|EOS|) ×GSET11)/2 AVDD-0.6+ ((|VID|+|EOS|) ×GSET11)/2 V Output voltage range VOUT 0.1 AVDD - 0.1 V Maximum output current IOUT -0.1 +0.1 mA Input bias current IIN ±50 nA Input bias offset current IOS ±20 nA Gain setting range GTOTAL1 GSET11 × GSET12 V/V 1st gain setting range GSET11 12, 16, 20, 24 V/V 2nd gain setting range GSET12 Note V/V Gain error EG1 TA = 25°C GSET11 = 24, GSET12 = 1 Gain drift dEG1 GSET11 = 24, GSET12 = 1 Offset error EOS1 TA = 25°C GSET11 = 24, GSET12 = 1 Referred to input Bandwidth BW11 Low-power mode GSET11 = 24, GSET12 = 1 (1.5) kHz BW12 High-speed mode GSET11 = 24, GSET12 = 1 (67) kHz SR11 Low-power mode (6) mV/μs SR12 High-speed mode (220) mV/μs Enb11 0.1 Hz to 10 Hz Low-power mode (3.0) μVrms Enb12 0.1 Hz to 10 Hz High-speed mode (2.6) μVrms Slew rate Peak-to-peak voltage noise Note (5.6) -10 ±2.7 % (22.0) ppm/°C +10 mV See the setting of PGA1GC3 to PGA1GC0. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 71 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Input-referred noise Symbol Conditions (2/2) MIN. TYP. MAX. Unit En11 f = 1 kHz Low-power mode (210) nV/ √Hz En12 f = 1 kHz High-speed mode (110) nV/ √Hz En13 f = 10 Hz Low-power mode (460) nV/ √Hz En14 f = 10 Hz High-speed mode (410) nV/ √Hz Common mode rejection ratio CMRR1 GSET11 = 24, GSET12 = 1 f = 50 Hz (100) dB Power supply rejection ratio PSRR1 2.7 V ≤ AVDD ≤ 5.5 V f = 50 Hz When SBIAS is selected as the reference voltage of the 12-bit D/A converter. (80) dB Remark 1. Values in parentheses are target design values (i.e. not guaranteed) and therefore are not tested for shipment. Remark 2. The typical conditions are the conditions when TA = 25°C and AVDD = 3.3 V. Remark 3. Unless otherwise specified, values are for operation in high-speed mode. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 72 of 143 RL78/H1D 2.6.9 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Operational amplifier 0 (AMP0) (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Common mode input voltage range Symbol Conditions VCM Output voltage range VOUT Maximum output current IOUT Input bias current IIN Input offset voltage VOS1 Slew rate IOUT= ±1 mA MIN. TYP. MAX. Unit 0.1 AVDD - 0.1 V 0.07 AVDD - 0.15 V (-2) (+2) mA ±50 nA +10 mV Low-power mode -10 VOS2 High-speed mode -7 SR1 Low-power mode (0.04) V/μs SR2 High-speed mode (0.7) V/μs GBW1 Low-power mode (0.06) MHz GBW2 High-speed mode (1) MHz PM1 Low-power mode (70) deg PM2 High-speed mode (60) deg Tset1 Low-power mode CL = 50 pF, RL = 10 kΩ (300) μs Tset2 High-speed mode CL = 50 pF, RL = 10 kΩ (14) μs Tstaw1 AMPEn = 0 → 1, Low-power mode CL = 50 pF, RL = 10 kΩ (300) μs Tstaw2 AMPEn = 0 → 1, High-speed mode CL = 50 pF, RL = 10 kΩ (14) μs En1 f = 1 kHz Low-power mode (200) nV/ √Hz En2 f = 1 kHz High-speed mode (80) nV/ √Hz Common mode rejection ratio CMRR DC (70) dB Power supply rejection ratio PSRR DC (90) dB Gain bandwidth Phase margin Settling time Stabilization wait time Input-referred noise +7 mV Remark 1. Values in parentheses are target design values (i.e. not guaranteed) and therefore are not tested for shipment. Remark 2. The typical conditions are the conditions when TA = 25°C and AVDD = 3.3 V. Remark 3. Unless otherwise specified, values are for operation in high-speed mode. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 73 of 143 RL78/H1D 2.6.10 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Operational amplifiers 1 and 2 (AMP1, AMP2) (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Common mode input voltage range Symbol Conditions MIN. TYP. MAX. Unit V VCM1 Low-power mode 0.2 AVDD - 0.5 VCM2 High-speed mode 0.3 AVDD - 0.6 V 0.1 AVDD - 0.1 V -100 +100 μA ±50 nA Output voltage range VOUT Maximum output current IOUT Input bias current IIN Input offset voltage VOS1 Low-power mode -10 +10 mV VOS2 High-speed mode -10 +10 mV SR1 Low-power mode (0.02) V/μs SR2 High-speed mode (1.1) V/μs Slew rate Gain bandwidth 2.7 V ≤ AVDD ≤ 5.5 V GBW1 Low-power mode (0.04) MHz GBW2 High-speed mode (1.7) MHz PM1 Low-power mode (70) deg PM2 High-speed mode (60) deg Tset1 Low-power mode CL = 50 pF, RL = 10 kΩ (750) μs Tset2 High-speed mode CL = 50 pF, RL = 10 kΩ (13) μs Tstaw1 AMPEn = 0 → 1, Low-power mode CL = 50 pF, RL = 10 kΩ (800) μs Tstaw2 AMPEn = 0 → 1, High-speed mode CL = 50 pF, RL = 10 kΩ (13) μs En1 f = 1 kHz Low-power mode (230) nV/ √Hz En2 f = 1 kHz High-speed mode (90) nV/ √Hz Common mode rejection ratio CMRR DC (90) dB Power supply rejection ratio PSRR DC (90) dB Phase margin Settling time Stabilization wait time Input-referred noise Remark 1. Values in parentheses are target design values (i.e. not guaranteed) and therefore are not tested for shipment. Remark 2. The typical conditions are the conditions when TA = 25°C and AVDD = 3.3 V. Remark 3. Unless otherwise specified, values are for operation in high-speed mode. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 74 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) 2.6.11 8-bit D/A converter (DAC0) (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, reference voltage (+) = 2.1 V (SBIAS)) Parameter Symbol Resolution DARES0 Absolute accuracy LE Differential non-linearity error DADLE0 Settling time DAtset0 Note Conditions MIN. TYP. Note CL = 50 pF, RL = 10 kΩ MAX. Unit 8 bit ±2.5 LSB ±2.0 LSB (6) μs Errors of the SBIAS output voltage are not included. Remark 1. Values in parentheses are target design values (i.e. not guaranteed) and therefore are not tested for shipment. Remark 2. The 8-bit D/A converter characteristics are the values obtained with the amplifier unit connected. 2.6.12 12-bit D/A converter (DAC1) (1) When reference voltage (+) = 2.1 V (SBIAS) (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, reference voltage (+) = 2.1 V (SBIAS)) Parameter Symbol Conditions Resolution DARES1 Output voltage range DAOUT 12-bit resolution Integral non-linearity error DAILE Differential non-linearity error DADLE1 MIN. TYP. MAX. Unit (12) bit SBIAS V 12-bit resolution ±4.0 LSB 12-bit resolution ±1.0 LSB 0.35 Offset error DAErr 12-bit resolution ±30 mV Gain error DAEG 12-bit resolution Note ±20 mV Settling time DAtset1 12-bit resolution CL = 50 pF, RL = 10 kΩ (60) μs Note Errors of the SBIAS output voltage are not included. Remark 1. Values in parentheses are target design values (i.e. not guaranteed) and therefore are not tested for shipment. Remark 2. The 12-bit D/A converter characteristics are the values obtained with the amplifier unit connected. (2) When reference voltage (+) = AVDD (TA = -40 to +85°C, 2.7 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, reference voltage (+) = AVDD) Parameter Resolution Symbol Conditions MIN. TYP. DARES1 MAX. Unit (12) bit Output voltage range DAOUT 12-bit resolution AVDD - 0.47 V Integral non-linearity error DAILE 12-bit resolution ±4.0 LSB Differential non-linearity error DADLE1 12-bit resolution ±1.0 LSB Offset error DAErr 12-bit resolution ±30 mV 0.35 Gain error DAEG 12-bit resolution ±20 mV Settling time DAtset1 12-bit resolution CL = 50 pF, RL = 10 kΩ (60) μs Remark 1. Values in parentheses are target design values (i.e. not guaranteed) and therefore are not tested for shipment. Remark 2. The 12-bit D/A converter characteristics are the values obtained with the amplifier unit connected. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 75 of 143 RL78/H1D 2.7 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Power supply voltage rising slope characteristics (TA = -40 to +85°C, VSS = 0 V) Parameter Conditions Power supply voltage rising slope Caution MIN. TYP. SVDD MAX. Unit 54 V/ms Make sure to keep the internal reset state by the LVD circuit or an external reset until VDD reaches the operating voltage range shown in 2.4 AC Characteristics. 2.8 2.8.1 LCD Characteristics Resistance division method (1) Static display mode (TA = -40 to +85°C, VL4 (MIN.) ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter LCD drive voltage Symbol Conditions MIN. TYP. 2.0 VL4 MAX. Unit VDD V MAX. Unit VDD V MAX. Unit VDD V (2) 1/2 bias method, 1/4 bias method (TA = -40 to +85°C, VL4 (MIN.) ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter LCD drive voltage Symbol Conditions MIN. TYP. 2.7 VL4 (3) 1/3 bias method (TA = -40 to +85°C, VL4 (MIN.) ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter LCD drive voltage Symbol VL4 R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Conditions MIN. 2.5 TYP. Page 76 of 143 RL78/H1D 2.8.2 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Internal voltage boosting method (1) 1/3 bias method (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter LCD output voltage variation range Symbol VL1 Conditions C1 to C4 Note 1 = 0.47 µF Note 2 MIN. TYP. MAX. Unit VLCD = 04H 0.90 1.00 1.08 V VLCD = 05H 0.95 1.05 1.13 V VLCD = 06H 1.00 1.10 1.18 V VLCD = 07H 1.05 1.15 1.23 V VLCD = 08H 1.10 1.20 1.28 V VLCD = 09H 1.15 1.25 1.33 V VLCD = 0AH 1.20 1.30 1.38 V VLCD = 0BH 1.25 1.35 1.43 V VLCD = 0CH 1.30 1.40 1.48 V VLCD = 0DH 1.35 1.45 1.53 V VLCD = 0EH 1.40 1.50 1.58 V VLCD = 0FH 1.45 1.55 1.63 V VLCD = 10H 1.50 1.60 1.68 V VLCD = 11H 1.55 1.65 1.73 V VLCD = 12H 1.60 1.70 1.78 V VLCD = 13H 1.65 1.75 1.83 V = 0.47 µF 2 VL1 - 0.1 2 VL1 2 VL1 V C1 to C4 Note 1 = 0.47 µF 3 VL1- 0.15 3 VL1 3 VL1 V Doubler output voltage VL2 C1 to C4 Tripler output voltage VL4 Reference voltage setup time Note 2 tVWAIT1 Voltage boost wait time Note 3 tVWAIT2 Note 1. Note 2. Note 3. Note 1 C1 to C4 Note 1 = 0.47 µF 5 ms 500 ms This is a capacitor that is connected between voltage pins used to drive the LCD. C1: A capacitor connected between CAPH and CAPL C2: A capacitor connected between VL1 and GND C3: A capacitor connected between VL2 and GND C4: A capacitor connected between VL4 and GND C1 = C2 = C3 = C4 = 0.47 µF±30% This is the time required to wait from when the reference voltage is specified by using the VLCD register (or when the internal voltage boosting method is selected (by setting the MDSET1 and MDSET0 bits of the LCDM0 register to 01B) if the default value reference voltage is used) until voltage boosting starts (VLCON = 1). This is the wait time from when voltage boosting is started (VLCON = 1) until display is enabled (LCDON = 1). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 77 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) (2) 1/4 bias method (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol LCD output voltage variation range VL1 Conditions C1 to C5 Note 1 = 0.47 µF Doubler output voltage VL2 Tripler output voltage VL3 Quadruply output voltage VL4 Reference voltage setup time Voltage boost wait time Note 1. Note 2. Note 3. Note 2 Note 3 Note 2 MIN. TYP. MAX. Unit VLCD = 04H 0.90 1.00 1.08 V VLCD = 05H 0.95 1.05 1.13 V VLCD = 06H 1.00 1.10 1.18 V VLCD = 07H 1.05 1.15 1.23 V VLCD = 08H 1.10 1.20 1.28 V VLCD = 09H 1.15 1.25 1.33 V VLCD = 0AH 1.20 1.30 1.38 V C1 to C5 Note 1 = 0.47 µF 2 VL1 - 0.08 2 VL1 2 VL1 V C1 to C5 Note 1 = 0.47 µF 3 VL1 - 0.12 3 VL1 3 VL1 V C1 to C5 Note 1 = 0.47 µF 4 VL1 - 0.16 4 VL1 4 VL1 V C1 to C5 Note 1 tVWAIT1 tVWAIT2 = 0.47µF 5 ms 500 ms This is a capacitor that is connected between voltage pins used to drive the LCD. C1: A capacitor connected between CAPH and CAPL C2: A capacitor connected between VL1 and GND C3: A capacitor connected between VL2 and GND C4: A capacitor connected between VL3 and GND C5: A capacitor connected between VL4 and GND C1 = C2 = C3 = C4 = C5 = 0.47 µF±30% This is the time required to wait from when the reference voltage is specified by using the VLCD register (or when the internal voltage boosting method is selected (by setting the MDSET1 and MDSET0 bits of the LCDM0 register to 01B) if the default value reference voltage is used) until voltage boosting starts (VLCON = 1). This is the wait time from when voltage boosting is started (VLCON = 1) until display is enabled (LCDON = 1). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 78 of 143 RL78/H1D 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) 2.8.3 Capacitor split method (1) 1/3 bias method (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. VL4 C1 to C4 = 0.47 µF VL2 voltage VL2 C1 to C4 = 0.47 µF Note 2 2/3 VL4 - 0.1 2/3 VL4 2/3 VL4 + 0.1 V VL1 voltage VL1 C1 to C4 = 0.47 µF Note 2 1/3 VL4 - 0.1 1/3 VL4 1/3 VL4 + 0.1 V Capacitor split wait time Note 1 tVWAIT Note 1. Note 2. VDD Unit VL4 voltage Note 2 V 100 ms This is the wait time from when voltage bucking is started (VLCON = 1) until display is enabled (LCDON = 1). This is a capacitor that is connected between voltage pins used to drive the LCD. C1: A capacitor connected between CAPH and CAPL C2: A capacitor connected between VL1 and GND C3: A capacitor connected between VL2 and GND C4: A capacitor connected between VL4 and GND C1 = C2 = C3 = C4 = 0.47 µF±30% R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 79 of 143 RL78/H1D 2.9 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) RAM data retention characteristics (TA = -40 to +85°C, VSS = 0 V) Parameter Data retention supply voltage Symbol Conditions VDDDR MIN. TYP. MAX. Unit 5.5 V 1.46 Note The value depends on the POR detection voltage. When the voltage drops, the RAM data is retained before a POR reset is effected, but RAM data is not retained when a POR reset is effected. Note Operation mode STOP mode RAM Data retention mode VDD VDDDR STOP instruction execution Standby release signal (interrupt request) 2.10 Flash Memory Programming Characteristics (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions MIN. System clock frequency fCLK 2.4 V ≤ VDD ≤ 5.5 V Number of code flash rewrites Cerwr Retained for 20 years TA = 85°C Number of data flash rewrites Retained for 1 year TA = 25°C Notes 1, 2, 3 Retained for 5 years TA = 85°C 100,000 Retained for 20 years TA = 85°C 10,000 TYP. MAX. 1 24 1,000 Unit MHz Times Notes 1, 2, 3 Note 1. Note 2. Note 3. 2.11 1,000,000 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite. When using flash memory programmer and Renesas Electronics self programming library These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics Corporation. Dedicated Flash Memory Programmer Communication (UART) (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Transfer rate R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Symbol Conditions During serial programming MIN. 115,200 TYP. MAX. Unit 1,000,000 bps Page 80 of 143 RL78/H1D 2.12 2. ELECTRICAL SPECIFICATIONS (R5F11N, R5F11P) (A: TA = -40 to +85°C) Timing of Entry to Flash Memory Programming Modes (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = 0 V) Parameter Symbol How long from when an external reset ends until the initial communication settings are specified tSUINIT POR and LVD reset must end before the external reset ends. How long from when the TOOL0 pin is placed at the low level until an external reset ends tSU POR and LVD reset must end before the external reset ends. 10 µs Time to hold the TOOL0 pin at the low level after an external reset is released (excluding the processing time of the firmware to control the flash memory) tHD POR and LVD reset must end before the external reset ends. 1 ms Conditions MIN. TYP. MAX. Unit 100 ms RESET 723 µs + tHD processing time 1-byte data for setting mode TOOL0 tSU tSUINIT The low level is input to the TOOL0 pin. The external reset ends (POR and LVD reset must end before the external reset ends.). The TOOL0 pin is set to the high level. Setting of the flash memory programming mode by UART reception and complete the baud rate setting. Remark tSUINIT: The segment shows that it is necessary to finish specifying the initial communication settings within 100 ms from when the resets end. tSU: How long from when the TOOL0 pin is placed at the low level until an external reset ends tHD: Time to hold the TOOL0 pin at the low level after an external reset is released (excluding the processing time of the firmware to control the flash memory) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 81 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) This chapter describes the electrical specifications for the products “D: Industrial applications (TA = -40 to +85°C)”. Caution 1. The RL78 microcontrollers have an on-chip debug function, which is provided for development and evaluation. Do not use the on-chip debug function in products designated for mass production, because the guaranteed number of rewritable times of the flash memory may be exceeded when this function is used, and product reliability therefore cannot be guaranteed. Renesas Electronics is not liable for problems occurring when the on-chip debug function is used. Caution 2. The pins mounted depend on the product. Refer to 2.1 Port Function to 2.2 Functions other than port pins in the User’s Manual: Hardware. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 82 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) 3.1 Absolute Maximum Ratings Absolute Maximum Ratings Parameter Supply voltage REGC pin input voltage (1/3) Symbol Conditions VDD Ratings Unit -0.5 to +6.5 V AVDD AVDD = VDD -0.5 to +6.5 V AVSS AVSS = VSS -0.5 to +0.3 V VIREGC REGC -0.3 to +2.8 V and -0.3 to VDD + 0.3 Note 1 Input voltage Output voltage Analog input voltage Note 1. Note 2. Caution VI1 P01 to P07, P10 to P17, P30 to P32, P35 to P37, P40, P43, P44, P50 to P53, P70 to P77, P80 to P86, P121 to P124, P125 to P127, P137, EXCLK, EXCLKS, RESET VI2 P60, P61 (N-ch open-drain) VI3 P20 to P27, P150, P151 VO1 P01 to P07, P10 to P17, P30 to P32, P35 to P37, P40, P43, P44, P50 to P53, P60, P61, P70 to P77, P80 to P86, P125 to P127 -0.3 to VDD + 0.3 VO2 P20 to P27, P150, P151 -0.3 to AVDD + 0.3 Note 2 V VAI1 ANI8 to ANI10 -0.3 to VDD + 0.3 Note 2 V -0.3 to VDD +0.3 Note 2 V -0.3 to +6.5 V -0.3 to AVDD + 0.3 Note 2 Note 2 V V Connect the REGC pin to VSS via a capacitor (0.47 to 1 µF). This value regulates the absolute maximum rating of the REGC pin. Do not use this pin with voltage applied to it. Must be 6.5 V or lower. Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. Remark 1. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. Remark 2. The reference voltage is VSS (for the VDD systems) = AVSS (for the AVDD systems). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 83 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Absolute Maximum Ratings Parameter LCD voltage Note 1. Note 2. Caution (2/3) Symbol Conditions Ratings Unit VLI1 VL1 input voltage Note 1 -0.3 to +2.8 V VLI2 VL2 input voltage Note 1 -0.3 to +6.5 V VLI3 VL3 input voltage Note 1 -0.3 to +6.5 V VLI4 VL4 input voltage Note 1 -0.3 to +6.5 V VLI5 CAPL, CAPH input voltage Note 1 -0.3 to +6.5 V VLO1 VL1 output voltage -0.3 to +2.8 V VLO2 VL2 output voltage -0.3 to +6.5 V VLO3 VL3 output voltage -0.3 to +6.5 V VLO4 VL4 output voltage -0.3 to +6.5 V VLO5 CAPL, CAPH output voltage -0.3 to +6.5 VLO6 COM0 to COM7 SEG0 to SEG35 output voltage V External resistance division method -0.3 to VDD + 0.3 Note 2 V Capacitor split method -0.3 to VDD + 0.3 Note 2 V Internal voltage boosting method -0.3 to VLI4 + 0.3 Note 2 V This value only indicates the absolute maximum ratings when applying voltage to the VL1, VL2, VL3, and VL4 pins; it does not mean that applying voltage to these pins is recommended. When using the internal voltage boosting method or capacitance split method, connect these pins to VSS via a capacitor (0.47 μF ± 30%) and connect a capacitor (0.47 μF ± 30%) between the CAPL and CAPH pins. Must be 6.5 V or lower. Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 84 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Absolute Maximum Ratings Parameter Output current, high (3/3) Symbol IOH1 Conditions IOL1 TA Storage temperature Tstg Caution P40, P43, P44, P80 to P83 -70 mA P01 to P07, P10 to P17, P30 to P32, P35 to P37, P50 to P53, P70 to P77, P84 to P86, P125 to P127 -100 mA -40 mA P21 to P27 -70 mA P20, P150, P151 -70 mA 40 mA P40, P43, P44, P80 to P83 70 mA P01 to P07, P10 to P17, P30 to P32, P35 to P37, P50 to P53, P60, P61, P70 to P77, P84 to P86, P125 to P127 100 mA 40 mA P21 to P27 70 mA P20, P150, P151 70 mA -40 to +85 °C -65 to +150 °C Per pin Total of all pins 140 mA Operating ambient temperature mA Per pin Total of all pins 170 mA IOL2 -40 Per pin Total of all pins -140 mA Output current, low Unit Per pin Total of all pins -170 mA IOH2 Ratings In normal operation mode In flash memory programming mode Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 85 of 143 RL78/H1D 3.2 3.2.1 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Oscillator Characteristics X1 and XT1 characteristics (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter X1 clock oscillation frequency X1 clock oscillation frequency Note Caution Resonator (fX) Note (fXT) Note Conditions Ceramic resonator/ crystal resonator MAX. Unit 2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 MHz 2.4 V ≤ VDD < 2.7 V 1.0 16.0 1.8 V ≤ VDD < 2.4 V 1.0 8.0 Crystal resonator MIN. TYP. 32 32.768 35 31 38.4 39 kHz Indicates only permissible oscillator frequency ranges. Refer to AC Characteristics for instruction execution time. Request evaluation by the manufacturer of the oscillator circuit mounted on a board to check the oscillator characteristics. Since the CPU is started by the high-speed on-chip oscillator clock after a reset release, check the X1 clock oscillation stabilization time using the oscillation stabilization time counter status register (OSTC) by the user. Determine the oscillation stabilization time of the OSTC register and the oscillation stabilization time select register (OSTS) after sufficiently evaluating the oscillation stabilization time with the resonator to be used. Remark 3.2.2 When using the X1 and XT1 oscillator, refer to 5.4 System Clock Oscillator in the User’s Manual: Hardware. On-chip oscillator characteristics (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter High-speed on-chip oscillator clock frequency Symbol fIH Notes 1, 2 High-speed on-chip oscillator clock frequency accuracy Low-speed on-chip oscillator clock frequency Low-speed on-chip oscillator clock frequency accuracy Note 1. Note 2. Conditions MIN. TYP. MAX. Unit 2.7 V ≤ VDD ≤ 5.5 V 1 24 MHz 2.4 V ≤ VDD < 2.7 V 1 16 MHz 1.8 V ≤ VDD < 2.4 V 1 8 MHz +1.0 % -20 to +85°C 1.8 V ≤ VDD ≤ 5.5 V -1.0 -40 to -20°C 1.8 V ≤ VDD ≤ 5.5 V -1.5 +1.5 15 fIL -15 % kHz +15 % High-speed on-chip oscillator frequency is selected with bits 0 to 4 of the option byte (000C2H/010C2H) and bits 0 to 2 of the HOCODIV register. This only indicates the oscillator characteristics. Refer to AC Characteristics for instruction execution time. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 86 of 143 RL78/H1D 3.3 3.3.1 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) DC Characteristics Pin characteristics (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Item Output current, high Symbol Note 1 IOH1 Conditions MIN. Per pin for P01 to P07, P10 to P17, P30 to P32, P35 to P37, P40, P43, P44, P50 to P53, P70 to P77, P80 to P86, P125 to P127 Total of P40, P43, P44, P80 to P83 (When duty ≤ 70% Note 3) Total of P01 to P07, P10 to P17, P30 to P32, P35 to P37, P50 to P53, P70 to P77, P84 to P86, P125 to P127 (1/5) TYP. MAX. Unit -10.0 mA Note 2 4.0 V ≤ VDD ≤ 5.5 V -55 mA 2.7 V ≤ VDD < 4.0 V -10 mA 1.8 V ≤ VDD < 2.7 V -5 mA 4.0 V ≤ VDD ≤ 5.5 V -69 mA 2.7 V ≤ VDD < 4.0 V -23 mA 1.8 V ≤ VDD < 2.7 V -12 mA 1.8 V ≤ VDD ≤ 5.5 V -124 mA -10.0 mA (When duty ≤ 70% Note 3) Total of all pins (When duty ≤ 70% IOH2 Note 3) Per pin for P20 to P27, P150, P151 1.8 V ≤ AVDD ≤ 5.5 V Note 2 Total of P21 to P27 4.0 V ≤ AVDD ≤ 5.5 V -50 mA 2.7 V ≤ AVDD < 4.0 V -10 mA 1.8 V ≤ AVDD < 2.7 V -5 mA Total of P20, P150, P151 4.0 V ≤ AVDD ≤ 5.5 V -21 mA (When duty ≤ 70% Note 3) 2.7 V ≤ AVDD < 4.0 V -5 mA 1.8 V ≤ AVDD < 2.7 V -3 mA 1.8 V ≤ AVDD ≤ 5.5 V -71 mA (When duty ≤ 70% Note 3) Total of all pins (When duty ≤ 70% Note 3) Note 1. Note 2. Note 3. Caution Value of current at which the device operation is guaranteed even if the current flows from the VDD pin (IOH1) and AVDD pin (IOH2) to an output pin. Do not exceed the total current value. Specification under conditions where the duty factor ≤ 70%. The output current value that has changed to the duty factor > 70% the duty ratio can be calculated with the following expression (when changing the duty factor from 70% to n%). • Total output current of pins = (IOH × 0.7)/(n × 0.01) Where n = 80% and IOH = −10.0 mA Total output current of pins = (−10.0 × 0.7)/(80 × 0.01) ≅ −8.7 mA However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A current higher than the absolute maximum rating must not flow into one pin. P02 to P04, P06, P07, P10, P12, P35 to P37, P40, P43, P44, P50 to P52, and P80 to P82 do not output high level in N-ch open-drain mode. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 87 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Item Output current, low Note 1 Symbol IOL1 Conditions (2/5) MIN. Per pin for P01 to P07, P10 to P17, P30 to P32, P35 to P37, P40, P43, P44, P50 to P53, P70 to P77, P80 to P86, P121 to P127 TYP. MAX. Unit 20.0 mA Note 2 Per pin for P60, P61 15.0 mA Note 2 Total of P40, P43, P44, P80 to P83 4.0 V ≤ VDD ≤ 5.5 V 70 mA (When duty ≤ 70% Note 3) 2.7 V ≤ VDD < 4.0 V 15 mA 1.8 V ≤ VDD < 2.7 V 9 mA 4.0 V ≤ VDD ≤ 5.5 V Total of P01 to P07, P10 to P17, P30 to P32, P35 to P37, 2.7 V ≤ VDD < 4.0 V P50 to P53, P60, P61, P70 to P77, 1.8 V ≤ VDD < 2.7 V P84 to P86, P125 to P127 90 mA 35 mA 20 mA 1.8 V ≤ VDD ≤ 5.5 V 160 mA Per pin for P20 to P27, P150, P151 1.8 V ≤ AVDD ≤ 5.5 V 20 mA Total of P21 to P27 4.0 V ≤ AVDD ≤ 5.5 V 60 mA (When duty ≤ 70% Note 3) 2.7 V ≤ AVDD < 4.0 V 10 mA 1.8 V ≤ AVDD < 2.7 V 5 mA Total of P20, P150, P151 4.0 V ≤ AVDD ≤ 5.5 V 25 mA (When duty ≤ 70% Note 3) 2.7 V ≤ AVDD < 4.0 V 8 mA 1.8 V ≤ AVDD < 2.7 V 5 mA 1.8 V ≤ AVDD ≤ 5.5 V 85 mA (When duty ≤ 70% Note 3) Total of all pins (When duty ≤ 70% Note 3) IOL2 Total of all pins (When duty ≤ 70% Note 3) Note 1. Note 2. Note 3. Remark Value of current at which the device operation is guaranteed even if the current flows from the VSS pin (IOL1) and AVSS pin (IOL2) to an output pin. Do not exceed the total current value. Specification under conditions where the duty factor ≤ 70%. The output current value that has changed to the duty factor > 70% the duty ratio can be calculated with the following expression (when changing the duty factor from 70% to n%). • Total output current of pins = (IOL × 0.7)/(n × 0.01) Where n = 80% and IOL = 10.0 mA Total output current of pins = (10.0 × 0.7)/(80 × 0.01) ≅ 8.7 mA However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A current higher than the absolute maximum rating must not flow into one pin. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 88 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Item Input voltage, high Input voltage, low Caution Symbol Conditions (3/5) MIN. MAX. Unit 0.8 VDD VDD V TTL input buffer, 4.0 V ≤ VDD ≤ 5.5 V 2.2 VDD V TTL input buffer, 3.3 V ≤ VDD < 4.0 V 2.0 VDD V TTL input buffer, 1.8 V ≤ VDD < 3.3 V 1.5 VDD V AVDD V VIH1 P01 to P07, P10 to P17, P30 to Normal input buffer P32, P35 to P37, P40, P43, P44, P50 to P53, P70 to P77, P80 to P86, P125 to P127 VIH2 For TTL mode supported ports VIH3 P20 to P27, P150, P151 0.8 AVDD VIH4 TYP. P60, P61 0.7 VDD 6.0 V VIH5 P121 to P124, P137, EXCLK, EXCLKS, RESET 0.8 VDD VDD V VIL1 P01 to P07, P10 to P17, P30 to Normal input buffer P32, P35 to P37, P40, P43, P44, P50 to P53, P70 to P77, P80 to P86, P125 to P127 0 0.2 VDD V VIL2 For TTL mode supported ports TTL input buffer, 4.0 V ≤ VDD ≤ 5.5 V 0 0.8 V TTL input buffer, 3.3 V ≤ VDD < 4.0 V 0 0.5 V TTL input buffer, 1.8 V ≤ VDD < 3.3 V 0 0.32 V VIL3 P20 to P27, P150, P151 0 0.2 AVDD V VIL4 P60, P61 0 0.3 VDD V VIL5 P121 to P124, P137, EXCLK, EXCLKS, RESET 0 0.2 VDD V The maximum VIH value on P02 to P04, P06, P07, P10, P12, P35 to P37, P40, P43, P44, P50 to P52, and P80 to P82 is VDD, even in the N-ch open-drain mode. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 89 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Item Output voltage, high Symbol VOH1 VOH2 Output voltage, low VOL1 VOL2 VOL3 Caution Conditions P01 to P07, P10 to P17, P30 to P32, P35 to P37, P40, P43, P44, P50 to P53, P70 to P77, P80 to P86, P125 to P127 P20 to P27, P150, P151 P01 to P07, P10 to P17, P30 to P32, P35 to P37, P40, P43, P44, P50 to P53, P70 to P77, P80 to P86, P125 to P127 P20 to P27, P150, P151 P60, P61 (4/5) MIN. TYP. MAX. Unit 4.0 V ≤ VDD ≤ 5.5 V, IOH = -10.0 mA VDD - 1.5 V 4.0 V ≤ VDD ≤ 5.5 V, IOH = -3.0 mA VDD - 0.7 V 2.7 V ≤ VDD ≤ 5.5 V, IOH = -2.0 mA VDD - 0.6 V 1.8 V ≤ VDD ≤ 5.5 V, IOH = -1.5 mA VDD - 0.5 V 4.0 V ≤ AVDD ≤ 5.5 V, IOH = -10.0 mA AVDD - 1.5 V 4.0 V ≤ AVDD ≤ 5.5 V, IOH = -3.0 mA AVDD - 0.7 V 2.7 V ≤ AVDD ≤ 5.5 V, IOH = -2.0 mA AVDD - 0.6 V 1.8 V ≤ AVDD ≤ 5.5 V, IOH = -1.5 mA AVDD - 0.5 V 4.0 V ≤ VDD ≤ 5.5 V, IOL = 20.0 mA 1.3 V 4.0 V ≤ VDD ≤ 5.5 V, IOL = 8.5 mA 0.7 V 2.7 V ≤ VDD ≤ 5.5 V, IOL = 3.0 mA 0.6 V 2.7 V ≤ VDD ≤ 5.5 V, IOL = 1.5 mA 0.4 V 1.8 V ≤ VDD ≤ 5.5 V, IOL = 0.6 mA 0.4 V 4.0 V ≤ AVDD ≤ 5.5 V, IOL = 20.0 mA 1.3 V 4.0 V ≤ AVDD ≤ 5.5 V, IOL = 8.5 mA 0.7 V 2.7 V ≤ AVDD ≤ 5.5 V, IOL = 3.0 mA 0.6 V 2.7 V ≤ AVDD ≤ 5.5 V, IOL = 1.5 mA 0.4 V 1.8 V ≤ AVDD ≤ 5.5 V, IOL = 0.6 mA 0.4 V 4.0 V ≤ VDD ≤ 5.5 V, IOL = 15.0 mA 2.0 V 4.0 V ≤ VDD ≤ 5.5 V, IOL = 5.0 mA 0.4 V 2.7 V ≤ VDD ≤ 5.5 V, IOL = 3.0 mA 0.4 V 1.8 V ≤ VDD ≤ 5.5 V, IOL = 2.0 mA 0.4 V The maximum VIH value on P02 to P04, P06, P07, P10, P12, P35 to P37, P40, P43, P44, P50 to P52, and P80 to P82 is VDD, even in the N-ch open-drain mode. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 90 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Item Input leakage current, high Input leakage current, low On-chip pull-up resistance Remark Symbol Conditions ILIH1 P01 to P07, P10 to P17, P30 to P32, P35 to P37, P40, P43, P44, P50 to P53, P60, P61, P70 to P77, P80 to P86, P125 to P127, P137, RESET VI = VDD ILIH2 P20 to P27, P150, P151 VI = AVDD ILIH3 P121 to P124 (X1, X2, EXCLK, XT1, XT2, EXCLKS) VI = VDD ILIL1 P01 to P07, P10 to P17, P30 to P32, P35 to P37, P40, P43, P44, P50 to P53, P60, P61, P70 to P77, P80 to P86, P125 to P127, P137, RESET VI = VSS ILIL2 P20 to P27, P150, P151 VI = AVSS ILIL3 P121 to P124 (X1, X2, EXCLK, XT1, XT2, EXCLKS) VI = VSS RU1 (5/5) MIN. TYP. MAX. Unit 1 µA 1 µA In input port mode or when using external clock input 1 µA When a resonator is connected 10 µA -1 µA -1 µA In input port mode or when using external clock input -1 µA When a resonator is connected -10 µA VI = VSS, 2.4 V ≤ VDD ≤ 5.5 V P01 to P07, P10 to P16, P30 to P32, P35 to P37, P50 to P53, P70 in input 1.8 V ≤ VDD < 2.4 V to P77, P125 to P127 port mode 10 20 100 kΩ 10 30 100 kΩ RU2 P17, P40, P43, P44, P80 to P86, VI = VSS, in input port mode 10 20 100 kΩ RU3 P20 to P27, P150 and P151 VI = AVSS, in input port mode 10 20 100 kΩ Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 91 of 143 RL78/H1D 3.3.2 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Supply current characteristics (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Supply current Conditions Symbol IDD1 (1/2) Operating HS (high-speed mode main) Mode Note 5 fIH = 24 MHz Note 3 Note 1 fIH = 16 MHz Note 3 LS (low-speed fIH = 8 MHz Note 3 main) Mode Note 5 MIN. TYP. MAX. Basic VDD = 5.0 V 1.7 operation VDD = 3.0 V 1.7 Normal VDD = 5.0 V 3.7 6.4 operation VDD = 3.0 V 3.7 6.4 Normal VDD = 5.0 V 2.8 5.0 operation VDD = 3.0 V 2.8 5.0 Unit mA Normal VDD = 3.0 V 1.2 2.1 operation VDD = 2.0 V 1.2 2.1 HS (high-speed fMX = 20 MHz Note 2, Normal Square wave input 3.1 5.4 main) Mode Note 5 VDD = 5.0 V operation Resonator connection 3.3 5.5 fMX = 20 MHz Note 2, Normal Square wave input 3.0 5.4 VDD = 3.0 V operation Resonator connection 3.3 5.5 fMX = 16 MHz Note 2, Normal Square wave input 2.6 4.7 VDD = 5.0 V operation Resonator connection 2.8 4.8 fMX = 16 MHz Note 2, Normal Square wave input 2.6 4.7 VDD = 3.0 V operation Resonator connection 2.8 4.8 fMX = 10 MHz Note 2, Normal Square wave input 1.9 3.1 VDD = 5.0 V operation Resonator connection 1.9 3.1 fMX = 10 MHz Note 2, Normal Square wave input 1.9 3.1 VDD = 3.0 V operation Resonator connection 1.9 3.1 LS (low-speed fMX = 8 MHz Note 2, Normal Square wave input 1.1 2.1 main) Mode Note 5 VDD = 3.0 V operation Resonator connection 1.1 2.1 fMX = 8 MH Note 2, Normal Square wave input 1.1 2.1 VDD = 2.0 V operation Resonator connection 1.1 2.1 Subsystem clock fSUB = 32.768 kHz Note 4 Normal Square wave input 4.3 5.8 operation TA = -40°C operation Resonator connection 4.6 5.8 fSUB = 32.768 kHz Note 4 Normal Square wave input 4.3 5.8 TA = +25°C operation Resonator connection 4.6 5.8 fSUB = 32.768 kHz Note 4 Normal Square wave input 4.5 7.6 TA = +50°C operation Resonator connection 4.5 7.6 fSUB = 32.768 kHz Note 4 Normal Square wave input 4.7 9.2 TA = +70°C operation Resonator connection 5.1 9.2 fSUB = 32.768 kHz Note 4 Normal Square wave input 5.2 12.6 TA = +85°C operation Resonator connection 5.7 12.6 fSUB = 38.4 kHz Note 4 Normal Square wave input 5.0 6.8 TA = -40°C operation Resonator connection 5.4 6.8 fSUB = 38.4 kHz Note 4 Normal Square wave input 5.0 6.8 TA = +25°C operation Resonator connection 5.4 6.8 fSUB = 38.4 kHz Note 4 Normal Square wave input 5.3 8.9 TA = +50°C operation Resonator connection 5.3 8.9 fSUB = 38.4 kHz Note 4 Normal Square wave input 5.5 10.8 TA = +70°C operation Resonator connection 6.0 10.8 fSUB = 38.4 kHz Note 4 Normal Square wave input 6.1 14.8 TA = +85°C operation Resonator connection 6.7 14.8 mA mA mA μA μA (Notes and Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 92 of 143 RL78/H1D Note 1. Note 2. Note 3. Note 4. Note 5. 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Total current flowing into VDD and AVDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the LCD controller/driver, A/D converter, LVD, I/O ports, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite. When high-speed on-chip oscillator and subsystem clock are stopped. When high-speed system clock and subsystem clock are stopped. When high-speed on-chip oscillator and high-speed system clock are stopped. When AMPHS1 = 1 (Ultra-low power consumption oscillation). However, not including the current flowing into the real-time clock 2, 12-bit interval timer, 8-bit interval timer, and watchdog timer. Relationship between operation voltage width, operation frequency of CPU, and operation mode is as below. HS (high-speed main) mode: 2.7 V ≤ VDD ≤ 5.5 V @ 1 MHz to 24 MHz 2.4 V ≤ VDD ≤ 5.5 V @ 1 MHz to 16 MHz LS (low-speed main) mode: 1.8 V ≤ VDD ≤ 5.5 V @ 1 MHz to 8 MHz Remark 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) High-speed on-chip oscillator clock frequency Remark 3. fSUB: Subsystem clock frequency (XT1 clock oscillation frequency) Remark 4. Except subsystem clock operation, temperature condition for the TYP. value is TA = 25°C. Remark 2. fIH: R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 93 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Supply current IDD2 Note 1 (2/2) Conditions HALT mode Note 2 HS (high-speed fIH = 24 MHz Note 4 main) Mode Note 7 fIH = 16 MHz Note 4 LS (low-speed fIH = 8 MHz Note 4 main) Mode Note 7 TYP. MAX. Unit VDD = 5.0 V MIN. 0.42 2.03 mA VDD = 3.0 V 0.42 2.03 VDD = 5.0 V 0.39 1.58 VDD = 3.0 V 0.39 1.58 VDD = 3.0 V 0.25 0.81 VDD = 2.0 V 0.25 0.81 HS (high-speed fMX = 20 MHz Note 3 Square wave input 0.26 1.75 main) Mode VDD = 5.0 V Resonator connection 0.40 1.88 Note 7 fMX = 20 MHz Note 3 Square wave input 0.25 1.75 VDD = 3.0 V Resonator connection 0.40 1.88 fMX = 16 MHz Note 3 Square wave input 0.23 1.42 VDD = 5.0 V Resonator connection 0.36 1.59 fMX = 16 MHz Note 3 Square wave input 0.22 1.42 VDD = 3.0 V Resonator connection 0.35 1.59 fMX = 10 MHz Note 3 Square wave input 0.19 0.92 VDD = 5.0 V Resonator connection 0.29 1.00 fMX = 10 MHz Note 3 Square wave input 0.18 0.92 VDD = 3.0 V Resonator connection 0.28 1.00 LS (low-speed fMX = 8 MHz Note 3 Square wave input 0.09 0.61 main) Mode VDD = 3.0 V Resonator connection 0.15 0.66 Note 7 fMX = 8 MHz Note 3 Square wave input 0.10 0.62 VDD = 2.0 V Resonator connection 0.15 0.67 Subsystem clock fSUB = 32.768 kHz Note 5 Square wave input 0.32 0.69 operation TA = -40°C Resonator connection 0.51 0.89 fSUB = 32.768 kHz Note 5 Square wave input 0.41 0.82 TA = +25°C Resonator connection 0.62 1.00 fSUB = 32.768 kHz Note 5 Square wave input 0.52 1.40 TA = +50°C Resonator connection 0.75 1.60 Square wave input 0.82 2.70 TA = +70°C Resonator connection 1.08 2.90 fSUB = 32.768 kHz Note 5 Square wave input 1.38 4.95 TA = +85°C Resonator connection 1.62 5.15 fSUB = 38.4 kHz Note 5 Square wave input 0.38 0.81 TA = -40°C Resonator connection 0.60 1.04 fSUB = 38.4 kHz Note 5 Square wave input 0.48 0.96 TA = +25°C Resonator connection 0.73 1.17 fSUB = 38.4 kHz Note 5 Square wave input 0.61 1.64 TA = +50°C Resonator connection 0.88 1.88 SUB = 32.768 kHz Note 5 Square wave input 0.96 3.16 TA = +70°C Resonator connection 1.27 3.40 fSUB = 38.4 kHz Note 5 Square wave input 1.62 5.80 TA = +85°C Resonator connection 1.90 6.04 SUB = 38.4 kHz Note 5 IDD3 STOP mode TA = -40°C 0.20 0.59 Note 6 Note 8 TA = +25°C 0.26 0.72 TA = +50°C 0.33 1.30 TA = +70°C 0.53 2.60 TA = +85°C 0.93 4.85 mA mA mA µA µA µA (Notes and Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 94 of 143 RL78/H1D Note 1. Note 2. Note 3. Note 4. Note 5. Note 6. Note 7. Note 8. 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Total current flowing into VDD and AVDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the LCD controller/driver, A/D converter, LVD, I/O ports, and on-chip pull-up/pull-down resistors and the current flowing during writing to the data flash. During HALT instruction execution from flash memory When the high-speed on-chip oscillator and the subsystem clock are stopped When the high-speed system clock and the subsystem clock are stopped When high-speed on-chip oscillator and high-speed system clock are stopped. When RTCLPC = 1 and setting ultra-low current consumption (AMPHS1 = 1). The current flowing into the real-time clock 2 is included. However, not including the current flowing into the 12-bit interval timer, 8-bit interval timer, and watchdog timer. Not including the current flowing into the real-time clock 2, 12-bit interval timer, 8-bit interval timer, and watchdog timer. Relationship between operation voltage width, operation frequency of CPU, and operation mode is as below. HS (high-speed main) Mode: 2.7 V ≤ VDD ≤ 5.5 V @ 1 MHz to 24 MHz 2.4 V ≤ VDD ≤ 5.5 V @ 1 MHz to 16 MHz LS (low-speed main) Mode: 1.8 V ≤ VDD ≤ 5.5 V @ 1 MHz to 8 MHz Regarding the value for current to operate the subsystem clock in STOP mode, refer to that in HALT mode. Remark 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) High-speed on-chip oscillator clock frequency Remark 3. fSUB: Subsystem clock frequency (XT1 clock oscillation frequency) Remark 4. Except subsystem clock operation, temperature condition of the TYP. value is TA = 25°C. Remark 2. fIH: R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 95 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) • Peripheral functions (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions (1/2) MIN. TYP. MAX. Unit 0.20 µA fSUB = 32.768 kHz 0.02 µA ITMKA fSUB = 38.4 kHz, fMAIN stopped 0.02 µA Notes 1, 2, 4 fSUB = 32.768 kHz, fMAIN stopped 0.02 µA 8-bit counter mode × 2-channel operation 0.14 µA 16-bit counter mode operation 0.12 µA 8-bit counter mode × 2-channel operation 0.12 µA 16-bit counter mode operation 0.10 µA µA Low-speed on-chip oscillator operating current IFIL Note 1 RTC2 operating current IRTC Notes 1, 3 12-bit Interval timer operating current 8-bit Interval timer operating current ITMRT Notes 1, 14 fSUB = 38.4 kHz, fMAIN stopped, per unit fSUB = 32.768 kHz, fMAIN stopped, per unit Watchdog timer operating current IWDT Notes 1, 5 fIL = 15 kHz 0.22 10-bit A/D converter operating current IADC Notes 1, 6 Normal mode, VDD = 5.0 V When conversion at Low-voltage mode, VDD = 3.0 V maximum speed 1.3 1.7 mA 0.5 0.7 mA Internal reference voltage (1.45 V) current IADREF Notes 1, 7 85 µA Temperature sensor operating current ITMPS Note 1 85 µA LVD operating current ILVI Notes 1, 8 0.06 µA Self-programming operating current IFSP Notes 1, 9 2.0 12.2 mA BGO operating current IBGO Notes 1, 10 2.0 12.2 mA SNOOZE operating current ISNOZ Notes 1, 11 A/D converter operation The mode is performed 0.50 0.60 mA During A/D conversion, low-voltage mode, VDD = 3.0 V 1.20 1.44 CSI/UART operation 0.70 0.84 DTC operation 3.1 (Notes and Remarks are listed on the page after the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 96 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter LCD operating current Symbol ILCD1 Notes 12, 13 (2/2) Conditions External resistance division method fLCD = fSUB 1/3 bias (32.768 kHz) 4-time slice LCD clock = 128 Hz MIN. TYP. MAX. Unit VDD = 5.0 V VL4 = 5.0 V fLCD = fSUB (38.4 kHz) LCD clock = 75 Hz ILCD2 Note 12 Internal voltage boosting method fLCD = fSUB 1/3 bias (32.768 kHz) 4-time slice LCD clock = 128 Hz VDD = 3.0 V VL4 = 3.0 V (VLCD = 04H) fLCD = fSUB (38.4 kHz) LCD clock = 75 Hz fLCD = fSUB (32.768 kHz) LCD clock = 128 Hz VDD = 5.0 V VL4 = 5.1 V (VLCD = 12H) fLCD = fSUB (38.4 kHz) 0.04 0.20 0.08 0.40 0.85 2.20 0.50 2.20 1.55 3.70 0.91 3.70 0.20 0.50 0.13 0.50 µA µA µA LCD clock = 75 Hz ILCD3 Note 12 Capacitor split method 1/3 bias fLCD = fSUB (32.768 kHz) 4-time slice LCD clock = 128 Hz fLCD = fSUB (38.4 kHz) LCD clock = 75 Hz Operating currents of the ITMRJ Note 15 fSUB = 38.4 kHz, fMAIN stopped, per unit meter-dedicated macro Note 15 fSUB = 38.4 kHz, fMAIN stopped IUARTMG VDD = 3.0 V VL4 = 3.0 V µA 0.10 µA 0.12 µA ISMOTD Note 15 fSUB = 38.4 kHz, fMAIN stopped 0.10 µA IEXSD Note 15 fSUB = 38.4 kHz, fMAIN stopped 0.02 µA (Notes and Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 97 of 143 RL78/H1D Note 1. Note 2. Note 3. Note 4. Note 5. Note 6. Note 7. Note 8. Note 9. Note 10. Note 11. Note 12. Note 13. Note 14. Note 15. 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Current flowing to VDD. When the high-speed on-chip oscillator and high-speed system clock are stopped. Current flowing only to the real-time clock 2 (excluding the operating current of the low-speed on-chip oscillator and the XT1 oscillator). The supply current of the RL78 microcontrollers is the sum of the values of either IDD1 or IDD2, and IRTC, when the real-time clock 2 is operating in operation mode or HALT mode. When the low-speed on-chip oscillator is selected, IFIL should be added. IDD2 subsystem clock operation includes the operational current of the real-time clock 2. Current flowing only to the 12-bit interval timer (excluding the operating current of the low-speed on-chip oscillator and the XT1 oscillator). The supply current of the RL78 microcontrollers is the sum of the values of either IDD1 or IDD2, and ITMKA , when the 12-bit interval timer operates in the operating mode or HALT mode. When the low-speed on-chip oscillator is selected, IFIL should be added. IDD2 subsystem clock operation includes the operational current of the 12-bit interval timer. Current flowing only to the watchdog timer (including the operating current of the low-speed on-chip oscillator). The supply current of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3 and IWDT when the watchdog timer is operating. Current flowing only to the A/D converter. The supply current of the RL78 microcontrollers is the sum of IDD1 or IDD2, IADC, and IADREF when the A/D converter operates in the operating mode or the HALT mode. Operation current flowing to the internal reference voltage. Current flowing only to the LVD circuit. The supply current of the RL78 microcontrollers is the sum of IDD1, IDD2, or IDD3 and ILVI when the LVD circuit operates in the operating mode, HALT mode, or STOP mode. Current flowing during self-programming Current flowing during writing to the data flash For time required to shift to the SNOOZE mode, see 27.3.3 SNOOZE mode in the User’s Manual: Hardware. Current flowing only to the LCD controller/driver (VDD pin). The current value of the RL78 microcontrollers is the sum of the LCD operating current (ILCD1, ILCD2, or ILCD3) and the supply current (IDD1 or IDD2) when the LCD controller/driver operates in the operating mode or HALT mode. Not including the current that flows through the LCD panel. Not including the current that flows through the external divider resistor. Current flowing only to the 8-bit interval timer (excluding the operating current of the low-speed on-chip oscillator and the XT1 oscillator). The supply current of the RL78 microcontrollers is the sum of the values of either IDD1 or IDD2, and IIT, when the 8-bit interval timer operates in the operating mode or HALT mode. When the low-speed on-chip oscillator is selected, IFIL should be added. The current value of the RL78 microcontrollers is the sum of IDD2 or IDD3 and ITMRJ, IUARTMG, ISMOTD, or IEXSD when each module operates in the sub-HALT mode or STOP mode. Remark 1. fIL: Low-speed on-chip oscillator clock frequency Subsystem clock frequency (XT1 clock oscillation frequency) Remark 3. fCLK: CPU/peripheral hardware clock frequency Remark 4. The temperature condition for the TYP. value is TA = 25°C. Remark 2. fSUB: R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 98 of 143 RL78/H1D 3.4 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) AC Characteristics (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Items Instruction cycle (minimum instruction execution time) Symbol TCY Conditions Main system clock (fMAIN) operation Subsystem clock (fSUB) operation MIN. External system clock input high-level width, low-level width fEX EXCLKS tEXH, tEXL EXCLK tEXHS, tEXLS EXCLKS µs 0.0625 1 µs LS (low-speed main) Mode 1.8 V ≤ VDD ≤ 5.5 V 0.125 1 µs fXT = 38.4 kHz 1.8 V ≤ VDD ≤ 5.5 V fXT = 32.768 kHz 1.8 V ≤ VDD ≤ 5.5 V tTIH, tTIL TI00 to TI07 Timer RJ input cycle tC TRJIO0, TRJIO1 Timer RJ input highlevel width, low-level width tTJIH, tTJIL TRJIO0, TRJIO1 Timer output frequency fTO TO00 to TO07 TRJIO0, TRJIO1, TRJO0, TRJO1 LS (low-speed main) Mode PCLBUZ0, PCLBUZ1 28.5 30.5 µs µs 0.0417 1 µs 0.0625 1 µs 0.125 1 µs 2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 MHz 2.4 V ≤ VDD < 2.7 V 1.0 16.0 MHz 1.8 V ≤ VDD < 2.4 V 1.0 8.0 MHz 32 35 kHz 2.7 V ≤ VDD ≤ 5.5 V 24 ns 2.4 V ≤ VDD < 2.7 V 30 ns 60 ns 13.7 µs 1/fMCK + 10 ns 2.7 V ≤ VDD ≤ 5.5 V 100 ns 1.8 V ≤ VDD < 2.7 V 300 ns 2.7 V ≤ VDD ≤ 5.5 V 40 ns 1.8 V ≤ VDD < 2.7 V 120 ns HS (high-speed main) 4.0 V ≤ VDD ≤ 5.5 V Mode 2.7 V ≤ VDD < 4.0 V 12 MHz 8 MHz 2.4 V ≤ VDD < 2.7 V 4 MHz 1.8 V ≤ VDD ≤ 5.5 V 4 MHz HS (high-speed main) 4.0 V ≤ VDD ≤ 5.5 V Mode 2.7 V ≤ VDD < 4.0 V 12 MHz 8 MHz 2.4 V ≤ VDD < 2.7 V 4 MHz 1.8 V ≤ VDD ≤ 5.5 V 4 MHz LS (low-speed main) Mode R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 26.04 31.3 1.8 V ≤ VDD < 2.4 V fPCL Unit 1 Timer input high-level width, low-level width Buzzer output frequency MAX. 0.0417 EXCLK fEXT TYP. HS (high-speed main) 2.7 V ≤ VDD ≤ 5.5 V Mode 2.4 V ≤ VDD < 2.7 V HS (high-speed main) 2.7 V ≤ VDD ≤ 5.5 V In the selfprogramming Mode 2.4 V ≤ VDD < 2.7 V mode LS (low-speed main) 1.8 V ≤ VDD ≤ 5.5 V Mode External system clock frequency (1/2) Page 99 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Items Interrupt input highlevel width, low-level width RESET low-level width Remark Symbol tINTH, tINTL tRSL Conditions (2/2) MIN. TYP. MAX. Unit INTP0 to INTP7 (when the pin on which the function is in use is multiplexed with pin functions other than P27 to P22) 1.8 V ≤ VDD ≤ 5.5 V 1 µs INTP2 to INTP7 (when the pin on which the function is in use is multiplexed with a pin function from among P27 to P22) 1.8 V ≤ AVDD ≤ 5.5 V 1 µs 10 µs fMCK: Timer array unit operation clock frequency (Operation clock to be set by the CKSmn bit of timer mode register mn (TMRmn). m: Unit number (m = 0), n: Channel number (n = 0 to 7)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 100 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Minimum Instruction Execution Time During Main System Clock Operation TCY vs VDD (HS (high-speed main) mode) 10 1.0 Cycle time TCY [µs] When the high-speed on-chip oscillator clock is selected During self-programming When high-speed system clock is selected 0.1 0.0625 0.05 0.0417 0.01 0 1.0 2.0 3.0 2.4 2.7 4.0 5.0 5.5 6.0 Supply voltage VDD [V] R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 101 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) TCY vs VDD (LS (low-speed main) mode) 10 When the high-speed on-chip oscillator clock is selected Cycle time TCY [μs] 1.0 During self-programming When high-speed system clock is selected 0.125 0.1 0.01 0 1.0 2.0 3.0 4.0 1.8 5.0 6.0 5.5 Supply voltage V DD [V] R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 102 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) AC Timing Test Points VIH/VOH VIH/V OH Test points VIL /VOL VIL /VOL External System Clock Timing 1/fEX 1/fEXS tEXL tEXLS tEXH tEXHS EXCLK/EXCLKS TI/TO Timing tTIL tTIH TI00 to TI07 1/fTO TO00 to TO07, TRJIO0, TRJIO1, TRJO0, TRJO1 tTJIL tTJIH TRJIO0, TRJIO1 R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 103 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Interrupt Request Input Timing tINTL tINTH INTP0 to INTP7 RESET Input Timing tRSL RESET R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 104 of 143 RL78/H1D 3.5 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Peripheral Functions Characteristics 3.5.1 Serial array unit (1) During communication at same potential (UART mode) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol HS (high-speed main) Mode Conditions MIN. Transfer rate MAX. 2.4 V ≤ VDD ≤ 5.5 V Note 1 Theoretical value of the maximum transfer rate LS (low-speed main) Mode MIN. Unit MAX. fMCK/6 fMCK/6 Note 2 Note 2 4.0 1.3 bps Mbps fMCK = fCLK Note 3 1.8 V ≤ VDD ≤ 5.5 V Theoretical value of the maximum transfer rate — fMCK/6 bps — 1.3 Mbps fMCK = fCLK Note 3 Note 1. Note 2. Note 3. Caution Transfer rate in the SNOOZE mode is 4800 bps only. The following conditions are required for low voltage interface. 2.4 V ≤ VDD < 2.7 V: MAX. 2.6 Mbps 1.8 V ≤ VDD < 2.4 V: MAX. 1.3 Mbps The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are: HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V) 16 MHz (2.4 V ≤ VDD ≤ 5.5 V) LS (low-speed main) mode: 8 MHz (1.8 V ≤ VDD ≤ 5.5 V) Select the normal input buffer for the RxDq pin and the normal output mode for the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). UART mode connection diagram (during communication at same potential) TxDq Rx RL78 microcontroller User’s device RxDq Tx UART mode bit width (during communication at same potential) (reference) 1/Transfer rate High-/Low-bit width Baud rate error tolerance TxDq RxDq Remark 1. q: UART number (q = 0 to 2), g: PIM or POM number (g = 0, 1, 3, 4, 5, 8) Remark 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00 to 03, 10, 11)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 105 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (2) During communication at same potential (CSI mode) (master mode, SCKp... internal clock output) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol SCKp cycle time tKCY1 Conditions SIp setup time (to SCKp↑) Note 1 SIp hold time (from SCKp↑) Note 2 Delay time from SCKp↓ to SOp output Note 3 Note 1. Note 2. Note 3. Note 4. Caution tSIK1 tKSI1 tKSO1 LS (low-speed main) Mode MIN. MIN. MAX. Unit MAX. tKCY1 ≥ 4/fCLK 2.7 V ≤ VDD ≤ 5.5 V 167 500 ns 2.4 V ≤ VDD ≤ 5.5 V 250 500 ns 1.8 V ≤ VDD ≤ 5.5 V tKH1, tKL1 SCKp high-/low-level width HS (high-speed main) Mode — 500 ns 4.0 V ≤ VDD ≤ 5.5 V tKCY1/2 - 12 tKCY1/2 - 50 ns 2.7 V ≤ VDD ≤ 5.5 V tKCY1/2 - 18 tKCY1/2 - 50 ns 2.4 V ≤ VDD ≤ 5.5 V tKCY1/2 38 tKCY1/2 - 50 ns 1.8 V ≤ VDD ≤ 5.5 V — tKCY1/2 - 50 ns 4.0 V ≤ VDD ≤ 5.5 V 44 110 ns 2.7 V ≤ VDD ≤ 5.5 V 44 110 ns 2.4 V ≤ VDD ≤ 5.5 V 75 110 ns 1.8 V ≤ VDD ≤ 5.5 V — 110 ns 2.4 V ≤ VDD ≤ 5.5 V 19 19 ns 1.8 V ≤ VDD ≤ 5.5 V — 19 ns C = 30 pF 2.7 V ≤ VDD ≤ 5.5 V 25 50 ns Note 4 2.4 V ≤ VDD ≤ 5.5 V 25 50 ns 1.8 V ≤ VDD ≤ 5.5 V — 50 ns When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. C is the load capacitance of the SCKp and SOp output lines. Select the normal input buffer for the SIp pin and the normal output mode for the SOp pin and SCKp pin by using port input mode register g (PIMg) and port output mode register g (POMg). Remark 1. p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIMand POM number (g = 0, 1, 3, 4, 5, 8) Remark 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00, 02, 10)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 106 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (3) During communication at same potential (CSI mode) (slave mode, SCKp... external clock input) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions (1/2) HS (high-speed main) Mode MIN. SCKp cycle time Note 5 tKCY2 SCKp high-/low-level width SIp setup time tKH2, tKL2 tSIK2 (to SCKp↑) Note 1 SIp hold time tKSI2 (from SCKp↑) Note 2 Delay time from SCKp↓ to SOp output Note 3 Note 1. Note 2. Note 3. Note 4. Note 5. Caution MIN. Unit MAX. 4.0 V ≤ VDD ≤ 5.5 V 20 MHz < fMCK 8/fMCK — ns fMCK ≤ 20 MHz 8/fMCK 6/fMCK ns 2.7 V ≤ VDD ≤ 5.5 V 16 MHz > fMCK 8/fMCK — ns fMCK ≤ 16 MHz 6/fMCK 6/fMCK ns 2.4 V ≤ VDD ≤ 5.5 V 6/fMCK and 500 6/fMCK and 500 ns 1.8 V ≤ VDD ≤ 5.5 V — 6/fMCK and 750 ns 4.0 V ≤ VDD ≤ 5.5 V tKCY2/2 - 7 tKCY2/2 - 7 ns 2.7 V ≤ VDD ≤ 5.5 V tKCY2/2 - 8 tKCY2/2 - 8 ns 2.4 V ≤ VDD ≤ 5.5 V tKCY2/2 - 18 tKCY2/2 - 18 ns 1.8 V ≤ VDD ≤ 5.5 V — tKCY2/2 - 18 ns 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + 20 1/fMCK + 30 ns 2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 30 1/fMCK + 30 ns 1.8 V ≤ VDD ≤ 5.5 V — 1/fMCK + 30 ns 2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 31 1/fMCK + 31 ns 1.8 V ≤ VDD ≤ 5.5 V tKSO2 MAX. LS (low-speed main) Mode C = 30 pF Note 4 — 1/fMCK + 31 ns 2.7 V ≤ VDD ≤ 5.5 V 2/fMCK + 44 2/fMCK + 110 ns 2.4 V ≤ VDD ≤ 5.5 V 2/fMCK + 75 2/fMCK + 110 ns 1.8 V ≤ VDD ≤ 5.5 V — 2/fMCK + 110 ns When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. C is the load capacitance of the SOp output lines. The maximum transfer rate when using the SNOOZE mode is 1 Mbps. Select the normal input buffer for the SIp and SCKp pins and the normal output mode for the SOp pin by using port input mode register g (PIMg) and port output mode register g (POMg). Remark 1. p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIM number (g = 0, 1, 3, 4, 5, 8) Remark 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00, 02, 10)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 107 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (3) During communication at same potential (CSI mode) (slave mode, SCKp... external clock input) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions (2/2) HS (high-speed main) Mode MIN. SSI00 setup time DAPmn = 0 tSSIK DAPmn = 1 SSI00 hold time DAPmn = 0 tKSSI DAPmn = 1 Caution MAX. LS (low-speed main) Mode MIN. Unit MAX. 2.7 V ≤ VDD ≤ 5.5 V 120 120 ns 2.4 V ≤ VDD ≤ 5.5 V 200 200 ns 1.8 V ≤ VDD ≤ 5.5 V — 200 ns 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + 120 1/fMCK + 120 ns 2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 200 1/fMCK + 200 ns 1.8 V ≤ VDD ≤ 5.5 V — 1/fMCK + 200 ns 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + 120 1/fMCK + 120 ns 2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 200 1/fMCK + 200 ns 1.8 V ≤ VDD ≤ 5.5 V — 1/fMCK + 200 ns 2.7 V ≤ VDD ≤ 5.5 V 120 120 ns 2.4 V ≤ VDD ≤ 5.5 V 200 200 ns 1.8 V ≤ VDD ≤ 5.5 V — 200 ns Select the normal input buffer for the SIp and SCKp pins and the normal output mode for the SOp pin by using port input mode register g (PIMg) and port output mode register g (POMg). Remark p: CSI number (p = 00), m: Unit number (m = 0), n: Channel number (n = 0), g: PIM number (g = 3, 4) CSI mode connection diagram (during communication at same potential) SCKp RL78 microcontroller SIp SOp SCK SO User's device SI CSI mode connection diagram (during communication at same potential) (Slave transmission of slave select input function (CSI00)) SCK00 SI00 RL78 microcontroller SO00 SSI00 Remark SCK SO User's device SI SSO p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 108 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) CSI mode serial transfer timing (during communication at same potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.) tKCY1, 2 tKH1, 2 tKL1, 2 SCKp tSIK1, 2 SIp tKSI1, 2 Input data tKSO1, 2 SOp Output data tKSSI tSSIK SSI00 (CSI00 only) CSI mode serial transfer timing (during communication at same potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) tKCY1, 2 tKL1, 2 tKH1, 2 SCKp tSIK1, 2 SIp tKSI1, 2 Input data tKSO1, 2 SOp Output data tSSIK tKSSI SSI00 (CSI00 only) Remark p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 109 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (4) During communication at same potential (simplified I2C mode) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter SCLr clock frequency Symbol fSCL Conditions HS (high-speed LS (low-speed main) Mode main) Mode MIN. MIN. 1000 400 Cb = 50 pF, Rb = 2.7 kΩ Note 1 Note 1 Cb = 100 pF, Rb = 3 kΩ 1.8 V (2.4 V Note 3) ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ tLOW MAX. 2.7 V ≤ VDD ≤ 5.5 V, 1.8 V (2.4 V Note 3) ≤ VDD ≤ 5.5 V, Hold time when SCLr = “L” MAX. 2.7 V ≤ VDD ≤ 5.5 V, Unit 400 400 Note 1 Note 1 300 300 Note 1 Note 1 kHz kHz kHz 475 1150 ns 1150 1150 ns 1550 1550 ns 475 1150 ns 1150 1150 ns 1550 1550 ns ns Cb = 50 pF, Rb = 2.7 kΩ 1.8 V (2.4 V Note 3) ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ 1.8 V (2.4 V Note 3) ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Hold time when SCLr = “H” tHIGH 2.7 V ≤ VDD ≤ 5.5 V, Cb = 50 pF, Rb = 2.7 kΩ 1.8 V (2.4 V Note 3) ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ 1.8 V (2.4 V Note 3) ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Data setup time (reception) Data hold time (transmission) tSU: DAT tHD: DAT 2.7 V ≤ VDD ≤ 5.5 V, 1/fMCK + 1/fMCK + Cb = 50 pF, Rb = 2.7 kΩ 85 Note 2 145 Note 2 1.8 V (2.4 V Note 3) ≤ VDD ≤ 5.5 V, 1/fMCK + 1/fMCK + Cb = 100 pF, Rb = 3 kΩ 145 Note 2 145 Note 2 ns 1.8 V (2.4 V Note 3) ≤ VDD < 2.7 V, 1/fMCK + 1/fMCK + Cb = 100 pF, Rb = 5 kΩ 230 Note 2 230 Note 2 2.7 V ≤ VDD ≤ 5.5 V, ns 0 305 0 305 ns 0 355 0 355 ns 0 405 0 405 ns Cb = 50 pF, Rb = 2.7 kΩ 1.8 V (2.4 V Note 3) ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ 1.8 V (2.4 V Note 3) ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Note 1. The value must be equal to or less than fMCK/4. Note 2. Set the fMCK value to keep the hold time of SCLr = “L” and SCLr = “H”. Note 3. Condition in the HS (high-speed main) mode Caution Select the normal input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin and the normal output mode for the SCLr pin by using port input mode register g (PIMg) and port output mode register h (POMh). (Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 110 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Simplified I2C mode connection diagram (during communication at same potential) VDD Rb SDAr SDA RL78 microcontroller User’s device SCLr SCL Simplified I2C mode serial transfer timing (during communication at same potential) 1/fSCL tLOW tHIGH SCLr SDAr tHD: DAT tSU: DAT Remark 1. Rb [Ω]: Communication line (SDAr) pull-up resistance, Cb [F]: Communication line (SDAr, SCLr) load capacitance Remark 2. r: IIC number (r = 00, 10, 20), g: PIM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), mn = 00, 02, 10) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 111 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (5) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) (1/2) HS (high-speed Parameter Symbol main) Mode Conditions MIN. Transfer rate Reception 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V Theoretical value of the maximum transfer rate MAX. LS (low-speed main) Mode MIN. Unit MAX. fMCK/6 fMCK/6 Note 1 Note 1 bps 4.0 1.3 Mbps fMCK/6 fMCK/6 bps Note 1 Note 1 4.0 1.3 Mbps bps fMCK = fCLK Note 4 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V Theoretical value of the maximum transfer rate fMCK = fCLK Note 4 1.8 V (2.4 V Note 5) ≤ VDD < 3.3 V, fMCK/6 fMCK/6 1.6 V ≤ Vb ≤ 2.0 V Notes 1, Notes 1, 2, 3 2, 3 4.0 1.3 Theoretical value of the maximum transfer rate Mbps fMCK = fCLK Note 4 Note 1. Transfer rate in the SNOOZE mode is 4800 bps only. Note 2. Use it with VDD ≥ Vb Note 3. The following conditions are required for low voltage interface. 2.4 V ≤ VDD < 2.7 V: MAX. 2.6 Mbps 1.8 V ≤ VDD < 2.4 V: MAX. 1.3 Mbps Note 4. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are: HS (high-speed main) Mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V) 16 MHz (2.4 V ≤ VDD ≤ 5.5 V) LS (low-speed main) Mode: 8 MHz (1.8 V ≤ VDD ≤ 5.5 V) Note 5. Caution Condition in the HS (high-speed main) mode Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. Remark 1. Vb [V]: Communication line voltage Remark 2. q: UART number (q = 0 to 2), g: PIM or POM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00 to 03, 10, 11)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 112 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (5) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) (2/2) HS (high-speed Parameter Symbol MIN. MAX. Transmission 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V Transfer rate LS (low-speed main) Mode Conditions main) Mode MIN. Note 1 Theoretical value of the maximum transfer rate Cb = 50 pF, Rb = 1.4 kΩ, Vb = 2.7 V 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V Theoretical value of the maximum transfer rate Cb = 50 pF, Rb = 2.7 kΩ, Vb = 2.3 V 1.8 V (2.4 V Note 8) ≤ VDD < 3.3 V, Unit MAX. Note 1 bps Mbps 2.8 2.8 Note 2 Note 2 Note 3 Note 3 bps Mbps 1.2 1.2 Note 4 Note 4 Notes 5, 6 Notes 5, 6 bps Mbps 1.6 V ≤ Vb ≤ 2.0 V Note 1. Theoretical value of the maximum transfer rate 0.43 0.43 Cb = 50 pF, Rb = 5.5 kΩ, Vb = 1.6 V Note 7 Note 7 The smaller maximum transfer rate derived by using fMCK/12 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 4.0 V ≤ VDD ≤ 5.5 V and 2.7 V ≤ Vb ≤ 4.0 V 1 Maximum transfer rate = 2.2 {-Cb × Rb × In (1 Vb [bps] )} × 3 1 Transfer rate × 2 - {-Cb × Rb × In (1 - 2.2 Vb )} × 100 [%] Baud rate error (theoretical value) = ( 1 Transfer rate ) × Number of transferred bits * This value is the theoretical value of the relative difference between the transmission and reception sides. Note 2. This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 1 above to calculate the maximum transfer rate under conditions of the customer. Note 3. The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 2.7 V ≤ VDD < 4.0 V and 2.3 V ≤ Vb ≤ 2.7 V 1 Maximum transfer rate = {-Cb × Rb × In (1 - 2.0 Vb [bps] )} × 3 1 Transfer rate × 2 - {-Cb × Rb × In (1 - 2.0 Vb )} × 100 [%] Baud rate error (theoretical value) = ( 1 Transfer rate ) × Number of transferred bits * This value is the theoretical value of the relative difference between the transmission and reception sides. Note 4. This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 3 above to calculate the maximum transfer rate under conditions of the customer. Note 5. Use it with VDD ≥ Vb R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 113 of 143 RL78/H1D Note 6. 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 1.8 V ≤ VDD < 3.3 V and 1.6 V ≤ Vb ≤ 2.0 V 1 Maximum transfer rate = {-Cb × Rb × In (1 - 1.5 Vb [bps] )} × 3 1 Transfer rate × 2 - {-Cb × Rb × In (1 - 1.5 Vb )} × 100 [%] Baud rate error (theoretical value) = ( 1 Transfer rate ) × Number of transferred bits * This value is the theoretical value of the relative difference between the transmission and reception sides. Note 7. This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 6 above to calculate the maximum transfer rate under conditions of the customer. Note 8. Caution Condition in the HS (high-speed main) mode Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. UART mode connection diagram (during communication at different potential) Vb Rb TxDq Rx RL78 microcontroller RxDq User’s device Tx (Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 114 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) UART mode bit width (during communication at different potential) (reference) 1/Transfer rate Low-bit width High-bit width Baud rate error tolerance TxDq 1/Transfer rate High-/Low-bit width Baud rate error tolerance RxDq Remark 1. Rb [Ω]: Communication line (TxDq) pull-up resistance, Cb [F]: Communication line (TxDq) load capacitance, Vb [V]: Communication line voltage Remark 2. q: UART number (q = 0 to 2), g: PIM or POM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00 to 03, 10, 11)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 115 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions (1/2) HS (high-speed main) Mode MIN. SCKp cycle time SCKp highlevel width SCKp lowlevel width tKCY1 tKH1 tKL1 tKCY1 ≥ 4/fCLK 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ Note 2. Caution MIN. Unit MAX. 300 1150 ns 500 1150 ns 1150 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ Note 1 1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ Note 1 1150 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ tKCY1/2 - 75 tKCY1/2 - 75 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ tKCY1/2 - 170 tKCY1/2 - 170 ns 1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ tKCY1/2 - 458 tKCY1/2 - 458 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ tKCY1/2 - 12 tKCY1/2 - 50 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ tKCY1/2 - 18 tKCY1/2 - 50 ns 1.8 V (2.4 VNote 2) ≤ VDD < 3.3 V, tKCY1/2 - 50 tKCY1/2 - 50 ns 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ Note 1. MAX. LS (low-speed main) Mode Use it with VDD ≥ Vb Condition in the HS (high-speed main) mode Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the SOp pin and SCKp pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. (Remarks are listed two pages after the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 116 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions (2/2) HS (high-speed main) Mode MIN. SIp setup time (to tSIK1 SCKp↓) Note 1 SCKp↓) tKSI1 Note 1 MIN. Unit MAX. 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 81 479 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 177 479 ns 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, 479 479 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 19 19 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 19 19 ns 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, 19 19 ns 1.6 V ≤ Vb ≤ 2.0 V SIp hold time (from MAX. LS (low-speed main) Mode Note 3, Cb = 30 pF, Rb = 5.5 kΩ 1.6 V ≤ Vb ≤ 2.0 V Note 3, Cb = 30 pF, Rb = 5.5 kΩ Delay time from SCKp↑ to SOp tKSO1 output Note 1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 100 100 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 195 195 ns 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, 483 483 ns 1.6 V ≤ Vb ≤ 2.0 V Note 3, Cb = 30 pF, Rb = 5.5 kΩ SIp setup time (to tSIK1 SCKp↓) Note 2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 44 110 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 44 110 ns 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, 110 110 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 19 19 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 19 19 ns 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, 19 19 ns 1.6 V ≤ Vb ≤ 2.0 V SIp hold time (from SCKp↓) tKSI1 Note 2 Note 3, Cb = 30 pF, Rb = 5.5 kΩ 1.6 V ≤ Vb ≤ 2.0 V Note 3, Cb = 30 pF, Rb = 5.5 kΩ Delay time from SCKp↑ to SOp tKSO1 output Note 2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 25 25 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 25 25 ns 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, 25 25 ns 1.6 V ≤ Vb ≤ 2.0 V Note 3, Cb = 30 pF, Rb = 5.5 kΩ Note 1. Note 2. Note 3. Note 4. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. Use it with VDD ≥ Vb Condition in the HS (high-speed main) mode (Caution and remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 117 of 143 RL78/H1D Caution 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the SOp pin and SCKp pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. CSI mode connection diagram (during communication at different potential) Vb Vb Rb SCKp RL78 microcontroller Rb SCK SIp SO SOp SI User’s device Remark 1. Rb [Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb [F]: Communication line (SCKp, SOp) load capacitance, Vb [V]: Communication line voltage Remark 2. p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIM or POM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00, 02, 10)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 118 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) CSI mode serial transfer timing (master mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.) tKCY1 tKL1 tKH1 SCKp tSIK1 tKSI1 Input data SIp tKSO1 Output data SOp CSI mode serial transfer timing (master mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) tKCY1 tKH1 tKL1 SCKp tSIK1 SIp tKSI1 Input data tKSO1 SOp Remark Output data p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIM or POM number (g = 0, 1, 3, 4, 5, 8) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 119 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (7) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (slave mode, SCKp... external clock input) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. SCKp cycle time tKCY2 Note 1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V 12/fMCK — ns 8 MHz < fMCK ≤ 20 MHz 10/fMCK — ns 4 MHz < fMCK ≤ 8 MHz 8/fMCK — ns fMCK ≤ 4 MHz 6/fMCK — ns 16/fMCK — ns 14/fMCK — ns 8 MHz < fMCK ≤ 16 MHz 12/fMCK — ns 4 MHz < fMCK ≤ 8 MHz 8/fMCK 16/fMCK ns fMCK ≤ 4 MHz 6/fMCK 10/fMCK ns 36/fMCK — ns 16 MHz < fMCK ≤ 20 MHz 32/fMCK — ns 8 MHz < fMCK ≤ 16 MHz 26/fMCK — ns 4 MHz < fMCK ≤ 8 MHz 16/fMCK 16/fMCK ns fMCK ≤ 4 MHz 10/fMCK 10/fMCK ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V tKCY2/2 12 tKCY2/2 50 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V tKCY2/2 18 tKCY2/2 50 ns 1.8 V (2.4 VNote 6) ≤ VDD < 3.3 V, tKCY2/2 50 tKCY2/2 50 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V 1/fMCK + 20 1/fMCK + 30 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V 1/fMCK + 20 1/fMCK + 30 ns 1.8 V (2.4 VNote 6) ≤ VDD < 3.3 V, 1/fMCK + 30 1/fMCK + 30 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V 1/fMCK + 31 1/fMCK + 31 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V 1/fMCK + 31 1/fMCK + 31 ns 1.8 V (2.4 VNote 6) ≤ VDD < 3.3 V, 1/fMCK + 31 1/fMCK + 31 ns 1.8 V (2.4 ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2 1.6 V ≤ Vb ≤ 2.0 V Note 2 SIp setup time tSIK2 (to SCKp↑) Note 3 1.6 V ≤ Vb ≤ 2.0 V SIp hold time tKSI2 Note 2 (from SCKp↑) Note 4 1.6 V ≤ Vb ≤ 2.0 V Delay time from SCKp↓ to SOp output Note 5 tKSO2 MAX. 20 MHz < fMCK VNote 6) tKH2, tKL2 MIN. Unit 20 MHz < fMCK 2.7 V ≤ VDD < 4.0 V, 20 MHz < fMCK 2.3 V ≤ Vb ≤ 2.7 V 16 MHz < fMCK ≤ 20 MHz SCKp high-/ low-level width MAX. LS (low-speed main) Mode Note 2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2/fMCK + 120 2/fMCK + 573 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2/fMCK + 214 2/fMCK + 573 ns 1.8 V (2.4 VNote 6) ≤ VDD < 3.3 V, 2/fMCK + 573 2/fMCK + 573 ns 1.6 V ≤ Vb ≤ 2.0 VNote 2, Cb = 30 pF, Rb = 5.5 kΩ (Notes, Cautions, and Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 120 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Note 6. Transfer rate in the SNOOZE mode: MAX. 1 Mbps Use it with VDD ≥ Vb. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 0. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. Condition in the HS (high-speed main) mode Caution Select the TTL input buffer for the SIp and SCKp pins, and the N-ch open drain output (VDD tolerance) mode for Note 1. Note 2. Note 3. Note 4. Note 5. the SOp pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. CSI mode connection diagram (during communication at different potential) Vb Rb SCKp RL78 microcontroller SCK SIp SO SOp SI User’s device Remark 1. Rb [Ω]: Communication line (SOp) pull-up resistance, Cb [F]: Communication line (SOp) load capacitance, Vb [V]: Communication line voltage Remark 2. p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0 , 2), g: PIM or POM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00, 02, 10)) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 121 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) CSI mode serial transfer timing (slave mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.) tKCY2 tKL2 tKH2 SCKp tSIK2 tKSI2 Input data SIp tKSO2 SOp Output data CSI mode serial transfer timing (slave mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) tKCY2 tKH2 tKL2 SCKp tSIK2 SIp tKSI2 Input data tKSO2 SOp Remark Output data p: CSI number (p = 00, 10, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 2), g: PIM or POM number (g = 0, 1, 3, 4, 5, 8) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 122 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter SCLr clock frequency Symbol fSCL Conditions (1/2) HS (highspeed main) Mode LS (lowspeed main) Mode MIN. MIN. 1000 300 Note 1 Note 1 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 50 pF, Rb = 2.7 kΩ 1000 300 Note 1 Note 1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 400 300 Note 1 Note 1 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 400 300 Note 1 Note 1 1.6 V ≤ Vb ≤ 2.0 V tLOW MAX. 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 50 pF, Rb = 2.7 kΩ 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, Hold time when SCLr = “L” MAX. Note 2, Cb = 100 pF, Rb = 5.5 kΩ Unit 400 300 Note 1 Note 1 kHz kHz kHz kHz kHz 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 50 pF, Rb = 2.7 kΩ 475 1550 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 50 pF, Rb = 2.7 kΩ 475 1550 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 1150 1550 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 1150 1550 ns 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, 1550 1550 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 50 pF, Rb = 2.7 kΩ 245 610 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 50 pF, Rb = 2.7 kΩ 200 610 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 675 610 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 600 610 ns 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, 610 610 ns 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 100 pF, Rb = 5.5 kΩ Hold time when SCLr = “H” tHIGH 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 100 pF, Rb = 5.5 kΩ R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 123 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions (2/2) HS (high-speed main) Mode MIN. Data setup time (reception) tSU:DAT 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 50 pF, Rb = 2.7 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 50 pF, Rb = 2.7 kΩ 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, Note 2, 1.6 V ≤ Vb ≤ 2.0 V Cb = 100 pF, Rb = 5.5 kΩ Data hold time (transmission) tHD:DAT MAX. 1/fMCK + 135 Note 3 190 190 190 1/fMCK + 190 ns Note 2 ns Note 3 1/fMCK + Note 3 190 1/fMCK + 190 ns Note 2 1/fMCK + Note 3 ns Note 3 1/fMCK + Note 3 190 Unit MAX. 1/fMCK + Note 3 1/fMCK + 190 MIN. 1/fMCK + 1/fMCK + 135 LS (low-speed main) Mode ns Note 3 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 50 pF, Rb = 2.7 kΩ 0 305 0 305 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 50 pF, Rb = 2.7 kΩ 0 305 0 305 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 0 355 0 355 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 0 355 0 355 ns 1.8 V (2.4 VNote 4) ≤ VDD < 3.3 V, 0 405 0 405 ns 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 100 pF, Rb = 5.5 kΩ Note 4. The value must be equal to or less than fMCK/4. Use it with VDD ≥ Vb Set the fMCK value to keep the hold time of SCLr = “L” and SCLr = “H”. Condition in the HS (high-speed main) mode Caution Select the TTL input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin and the N-ch Note 1. Note 2. Note 3. open drain output (VDD tolerance) mode for the SCLr pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. (Remarks are listed on the next page.) R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 124 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Simplified I2C mode connection diagram (during communication at different potential) Vb Vb Rb Rb SDA SDAr RL78 microcontroller User’s device SCL SCLr Simplified I2C mode serial transfer timing (during communication at different potential) 1/fSCL tLOW tHIGH SCLr SDAr tHD: DAT tSU: DAT Remark 1. Rb [Ω]: Communication line (SDAr, SCLr) pull-up resistance, Cb [F]: Communication line (SDAr, SCLr) load capacitance, Vb [V]: Communication line voltage Remark 2. r: IIC number (r = 00, 10, 20), g: PIM, POM number (g = 0, 1, 3, 4, 5, 8) Remark 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0), n: Channel number (n = 0, 2), mn = 00, 02, 10) 3.5.2 Serial Interface UARTMG (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Transfer rate R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Symbol Conditions MIN. TYP. MAX. Unit fSUB = 38.4 kHz 200 9600 bps fSUB = 38.4 kHz (when the clock doubler is in use) 200 19200 bps Page 125 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) 3.5.3 Serial interface IICA (1) I2C standard mode (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol HS (high-speed main) Mode Conditions MIN. SCLA0 clock frequency fSCL Standard mode: 2.7 V ≤ VDD ≤ 5.5 V fCLK ≥ 1 MHz 1.8 V (2.4 VNote 3) ≤ MAX. LS (low-speed main) Mode MIN. Unit MAX. 0 100 0 100 kHz 0 100 0 100 kHz VDD ≤ 5.5 V Setup time of restart tSU: STA condition 2.7 V ≤ VDD ≤ 5.5 V 1.8 V (2.4 Hold time Note 1 tHD: STA tLOW when SCLA0 = “L” Hold time tHIGH when SCLA0 = “H” Data setup time tSU: DAT (reception) tHD: DAT (transmission) Note 2 Setup time of stop tSU: STO condition Bus-free time tBUF Note 2. Note 3. Remark 4.7 µs 4.7 µs 4.0 4.0 µs 4.0 4.0 µs 4.7 4.7 µs 1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V 4.7 4.7 µs ≤ VDD ≤ 5.5 V 2.7 V ≤ VDD ≤ 5.5 V 4.0 4.0 µs 1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V 4.0 4.0 µs 2.7 V ≤ VDD ≤ 5.5 V 250 250 ns VNote 3) ≤ VDD ≤ 5.5 V 250 2.7 V ≤ VDD ≤ 5.5 V 0 1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V 0 250 3.45 ns 0 3.45 µs 0 3.45 µs 2.7 V ≤ VDD ≤ 5.5 V 4.0 4.0 µs 1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V 4.0 4.0 µs 2.7 V ≤ VDD ≤ 5.5 V 1.8 V (2.4 Note 1. VNote 3) 4.7 4.7 2.7 V ≤ VDD ≤ 5.5 V 1.8 V (2.4 Data hold time ≤ VDD ≤ 5.5 V 2.7 V ≤ VDD ≤ 5.5 V 1.8 V (2.4 Hold time VNote 3) VNote 3) ≤ VDD ≤ 5.5 V 4.7 4.7 µs 4.7 4.7 µs The first clock pulse is generated after this period when the start/restart condition is detected. The maximum value (MAX.) of tHD:DAT is during normal transfer and a wait state is inserted in the ACK (acknowledge) timing. Condition in the HS (high-speed main) mode The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up resistor) at that time in each mode are as follows. Standard mode: Cb = 400 pF, Rb = 2.7 kΩ R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 126 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (2) I2C fast mode (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter SCLA0 clock frequency Symbol fSCL HS (high-speed main) Mode Conditions Fast mode: fCLK ≥ 3.5 MHz 2.7 V ≤ VDD ≤ 5.5 V 1.8 V (2.4 VNote 3) ≤ LS (low-speed main) Mode Unit MIN. MAX. MIN. MAX. 0 400 0 400 kHz 0 400 0 400 kHz VDD ≤ 5.5 V Setup time of restart tSU: STA condition Hold time 2.7 V ≤ VDD ≤ 5.5 V Hold time tHD: STA tLOW when SCLA0 = “L” Hold time tHIGH when SCLA0 = “H” Data setup time (reception) Data hold time tHD: DAT (transmission) Note 2 Setup time of stop tSU: STO condition tBUF 0.6 µs 0.6 µs 1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V 0.6 0.6 µs 2.7 V ≤ VDD ≤ 5.5 V 1.3 1.3 µs 1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V 1.3 1.3 µs 2.7 V ≤ VDD ≤ 5.5 V 0.6 0.6 µs Note 2. Note 3. Remark VNote 3) ≤ VDD ≤ 5.5 V 0.6 0.6 µs 2.7 V ≤ VDD ≤ 5.5 V 100 100 ns 1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V 100 100 ns ≤ VDD ≤ 5.5 V 2.7 V ≤ VDD ≤ 5.5 V 0 0 0.9 µs 1.8 V (2.4 VNote 3) ≤ VDD ≤ 5.5 V 0 0 0.9 µs 0.6 0.6 µs 0.6 0.6 µs 1.3 1.3 µs 1.3 1.3 µs 2.7 V ≤ VDD ≤ 5.5 V VNote 3) ≤ VDD ≤ 5.5 V 2.7 V ≤ VDD ≤ 5.5 V 1.8 V (2.4 Note 1. µs 0.6 1.8 V (2.4 Bus-free time 0.6 0.6 1.8 V (2.4 tSU: DAT 0.6 2.7 V ≤ VDD ≤ 5.5 V 1.8 V (2.4 Note 1 VNote 3) VNote 3) ≤ VDD ≤ 5.5 V 0.9 The first clock pulse is generated after this period when the start/restart condition is detected. The maximum value (MAX.) of tHD: DAT is during normal transfer and a wait state is inserted in the ACK (acknowledge) timing. Condition in the HS (high-speed main) mode The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up resistor) at that time in each mode are as follows. Fast mode: Cb = 320 pF, Rb = 1.1 kΩ R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 127 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (3) I2C fast mode plus (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol SCLA0 clock frequency fSCL HS (high-speed main) Mode Conditions 2.7 V ≤ VDD ≤ 5.5 V Fast mode plus: MIN. MAX. 0 1000 LS (low-speed main) Mode MIN. Unit MAX. — kHz fCLK ≥ 10 MHz Setup time of restart tSU: STA 2.7 V ≤ VDD ≤ 5.5 V 0.26 — µs Hold time Note 1 tHD: STA 2.7 V ≤ VDD ≤ 5.5 V 0.26 — µs Hold time tLOW 2.7 V ≤ VDD ≤ 5.5 V 0.5 — µs tHIGH 2.7 V ≤ VDD ≤ 5.5 V 0.26 — µs tSU: DAT 2.7 V ≤ VDD ≤ 5.5 V 50 — ns tHD: DAT 2.7 V ≤ VDD ≤ 5.5 V 0 — µs tSU: STO 2.7 V ≤ VDD ≤ 5.5 V 0.26 — µs tBUF 2.7 V ≤ VDD ≤ 5.5 V 0.5 — µs condition when SCLA0 = “L” Hold time when SCLA0 = “H” Data setup time (reception) Data hold time 0.45 (transmission) Note 2 Setup time of stop condition Bus-free time Note 1. Note 2. Remark The first clock pulse is generated after this period when the start/restart condition is detected. The maximum value (MAX.) of tHD: DAT is during normal transfer and a wait state is inserted in the ACK (acknowledge) timing. The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up resistor) at that time in each mode are as follows. Fast mode plus: Cb = 120 pF, Rb = 1.1 kΩ IICA serial transfer timing tR tLOW SCLn tHD: DAT tHD: STA tHIGH tF tSU: STA tHD: STA tSU: STO tSU: DAT SDAn tBUF Stop condition Start condition R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Restart condition Stop condition Page 128 of 143 RL78/H1D 3.6 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Analog Characteristics 3.6.1 (1) A/D converter Characteristics When reference voltage (+) = VDD (ADREFP1 = 0, ADREFP0 = 0), reference voltage (-) = VSS (ADREFM = 0), target pin: ANI8 to ANI10, internal reference voltage, and temperature sensor output voltage (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, reference voltage (+) = VDD, reference voltage (–) = VSS) Parameter Symbol Conditions MIN. TYP. 8 MAX. Unit 10 bit ±7.0 LSB Resolution RES Overall error Note 1 AINL 10-bit resolution 1.8 V ≤ VDD ≤ 5.5 V Conversion time tCONV 10-bit resolution 3.6 V ≤ VDD ≤ 5.5 V 2.125 39 μs Target pin: ANI8 to ANI10 2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 μs 1.8 V ≤ VDD ≤ 5.5 V 17 39 μs 10-bit resolution 3.6 V ≤ VDD ≤ 5.5 V 2.375 39 μs Target pin: internal reference voltage 2.7 V ≤ VDD ≤ 5.5 V 3.5626 39 μs 1.8 V ≤ VDD ≤ 5.5 V 17 39 μs and temperature sensor output voltage (HS (high-speed main) mode) Zero-scale error 1.2 EZS 10-bit resolution 1.8 V ≤ VDD ≤ 5.5 V ±0.60 %FSR EFS 10-bit resolution 1.8 V ≤ VDD ≤ 5.5 V ±0.60 %FSR ILE 10-bit resolution 1.8 V ≤ VDD ≤ 5.5 V ±4.0 LSB DLE 10-bit resolution 1.8 V ≤ VDD ≤ 5.5 V ±2.0 LSB VAIN ANI8 to ANI10 VDD V Notes 1, 2 Full-scale error Notes 1, 2 Integral linearity error Note 1 Differential linearity error Note 1 Analog input voltage 0 VBGR Note 3 V VTMPS25 Note 3 V Internal reference voltage (2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode) Temperature sensor output voltage (2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode) Note 1. Note 2. Note 3. Excludes quantization error (±1/2 LSB). This value is indicated as a ratio (%FSR) to the full-scale value. Refer to 3.6.2 Temperature sensor/internal reference voltage output characteristics. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 129 of 143 RL78/H1D (2) 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) When reference voltage (+) = Internal reference voltage (ADREFP1 = 1, ADREFP0 = 0), reference voltage (-) = VSS (ADREFM = 0), target pin: ANI8 to ANI10 (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, reference voltage (+) = VBGRNote 3, reference voltage (–) = VSS = 0 V, HS (high-speed main) mode) Parameter Symbol Resolution RES Conversion time tCONV Conditions MIN. TYP. MAX. Unit 39 μs 8 8-bit resolution 2.4 V ≤ VDD ≤ 5.5 V 17 bit EZS 8-bit resolution 2.4 V ≤ VDD ≤ 5.5 V ±(0.60+0.35) %FSR ILE 8-bit resolution 2.4 V ≤ VDD ≤ 5.5 V ±(2.0+0.5) LSB Differential linearity error Note 1 DLE 8-bit resolution 2.4 V ≤ VDD ≤ 5.5 V ±(1.0+0.2) LSB Analog input voltage VAIN VBGR Note 3 V Zero-scale error Notes 1, 2, Integral linearity error Note 1. Note 2. Note 3. 3.6.2 Note 1 0 Excludes quantization error (±1/2 LSB). This value is indicated as a ratio (%FSR) to the full-scale value. Refer to 3.6.2 Temperature sensor/internal reference voltage output characteristics. Temperature sensor/internal reference voltage output characteristics (TA = -40 to +85°C, 2.4 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V, HS (high-speed main) Mode) Parameter Symbol Conditions Temperature sensor output voltage VTEMP Internal reference voltage VBGR Temperature coefficient FVTMPS Temperature sensor output voltage that depends on the temperature Operation stabilization wait time tAMP R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 MIN. TA = +25°C MAX. 1.05 1.38 2.4 V ≤ VDD ≤ 5.5 V TYP. 1.45 -3.6 5 Unit V 1.5 V mV/°C μs Page 130 of 143 RL78/H1D 3.6.3 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) POR circuit characteristics (TA = -40 to +85°C, VSS = 0 V) Parameter Symbol Detection voltage Minimum pulse width Note 1. Note 2. VPOR Note 2 Conditions Power supply rise time MIN. TYP. MAX. Unit 1.47 1.51 1.55 V 1.46 1.50 1.54 V VPDR Power supply fall time TPW1 Other than STOP/SUB HALT/SUB RUN 300 µs TPW2 STOP/SUB HALT/SUB RUN 300 µs Note 1 If the power supply voltage falls while the voltage detector is off, be sure to either shift to STOP mode or execute a reset by using the voltage detector or external reset pin before the power supply voltage falls below the minimum operating voltage specified in 3.4 AC Characteristics. Minimum time required for a POR reset when VDD falls below VPDR. This is also the minimum time required for a POR reset from when VDD exceeds below 0.7 V to when VDD exceeds VPOR while STOP mode is entered or the main system clock is stopped through setting bit 0 (HIOSTOP) and bit 7 (MSTOP) in the clock operation status control register (CSC). TPW1 TPW2 VDD VPDR VPOR 0.7 V R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 131 of 143 RL78/H1D 3.6.4 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) LVD circuit characteristics (1) LVD detection voltage in reset mode and interrupt mode (TA = -40 to +85°C, VPDR ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Detection voltage Supply voltage level Symbol VLVD0 VLVD1 VLVD2 VLVD3 VLVD4 VLVD5 VLVD6 VLVD7 VLVD8 VLVD9 VLVD10 VLVD11 Minimum pulse width Conditions MIN. TYP. MAX. Unit Rising edge 3.98 4.06 4.14 V Falling edge 3.90 3.98 4.06 V Rising edge 3.68 3.75 3.82 V Falling edge 3.60 3.67 3.74 V Rising edge 3.07 3.13 3.19 V Falling edge 3.00 3.06 3.12 V Rising edge 2.96 3.02 3.08 V Falling edge 2.90 2.96 3.02 V Rising edge 2.86 2.92 2.97 V Falling edge 2.80 2.86 2.91 V Rising edge 2.76 2.81 2.87 V Falling edge 2.70 2.75 2.81 V Rising edge 2.66 2.71 2.76 V Falling edge 2.60 2.65 2.70 V Rising edge 2.56 2.61 2.66 V Falling edge 2.50 2.55 2.60 V Rising edge 2.45 2.50 2.55 V Falling edge 2.40 2.45 2.50 V Rising edge 2.05 2.09 2.13 V Falling edge 2.00 2.04 2.08 V Rising edge 1.94 1.98 2.02 V Falling edge 1.90 1.94 1.98 V Rising edge 1.84 1.88 1.91 V Falling edge 1.80 1.84 1.87 V tLW Detection delay time Caution 300 µs 300 µs Set the detection voltage (VLVD) to be within the operating voltage range. The operating voltage range depends on the setting of the user option byte (000C2H/010C2H). The following shows the operating voltage range. HS (high-speed main) mode: VDD = 2.7 to 5.5 V @ 1 MHz to 24 MHz VDD = 2.4 to 5.5 V @ 1 MHz to 16 MHz LS (low-speed main) mode: R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 VDD = 1.8 to 5.5 V @ 1 MHz to 8 MHz Page 132 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (2) LVD Detection Voltage of Interrupt & Reset Mode (TA = -40 to +85°C, VPDR ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Interrupt and reset mode VLVDB0 Conditions VPOC2, VPOC1, VPOC0 = 0, 0, 1, falling reset voltage: 1.8 V TYP. MAX. Unit 1.80 1.84 1.87 V 1.94 1.98 2.02 V VLVDB1 LVIS1, LVIS0 = 1, 0 Rising release reset voltage Falling interrupt voltage 1.90 1.94 1.98 V VLVDB2 LVIS1, LVIS0 = 0, 1 Rising release reset voltage 2.05 2.09 2.13 V Falling interrupt voltage 2.00 2.04 2.08 V Rising release reset voltage 3.07 3.13 3.19 V Falling interrupt voltage 3.00 3.06 3.12 V 2.40 2.45 2.50 V Rising release reset voltage 2.56 2.61 2.66 V Falling interrupt voltage 2.50 2.55 2.60 V Rising release reset voltage 2.66 2.71 2.76 V Falling interrupt voltage 2.60 2.65 2.70 V Rising release reset voltage 3.68 3.75 3.82 V Falling interrupt voltage 3.60 3.67 3.74 V LVIS1, LVIS0 = 0, 0 VLVDB3 VLVDC0 VPOC2, VPOC1, VPOC0 = 0, 1, 0, falling reset voltage: 2.4 V LVIS1, LVIS0 = 1, 0 VLVDC1 LVIS1, LVIS0 = 0, 1 VLVDC2 LVIS1, LVIS0 = 0, 0 VLVDC3 VLVDD0 VPOC2, VPOC1, VPOC0 = 0, 1, 1, falling reset voltage: 2.7 V VLVDD1 3.7 MIN. LVIS1, LVIS0 = 1, 0 2.70 2.75 2.81 V Rising release reset voltage 2.86 2.92 2.97 V Falling interrupt voltage 2.80 2.86 2.91 V 2.96 3.02 3.08 V VLVDD2 LVIS1, LVIS0 = 0, 1 Rising release reset voltage Falling interrupt voltage 2.90 2.96 3.02 V VLVDC3 LVIS1, LVIS0 = 0, 0 Rising release reset voltage 3.98 4.06 4.14 V Falling interrupt voltage 3.90 3.98 4.06 V Power supply voltage rising slope characteristics (TA = -40 to +85°C, VSS = 0 V) Parameter Power supply voltage rising slope Caution Symbol SVDD Conditions MIN. TYP. MAX. Unit 54 V/ms Make sure to keep the internal reset state by the LVD circuit or an external reset until VDD reaches the operating voltage range shown in 3.4 AC Characteristics. R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 133 of 143 RL78/H1D 3.8 3.8.1 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) LCD Characteristics Resistance division method (1) Static display mode (TA = -40 to +85°C, VL4 (MIN.) ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter LCD drive voltage Symbol Conditions MIN. TYP. 2.0 VL4 MAX. Unit VDD V MAX. Unit VDD V MAX. Unit VDD V (2) 1/2 bias method, 1/4 bias method (TA = -40 to +85°C, VL4 (MIN.) ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter LCD drive voltage Symbol Conditions MIN. TYP. 2.7 VL4 (3) 1/3 bias method (TA = -40 to +85°C, VL4 (MIN.) ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter LCD drive voltage Symbol VL4 R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Conditions MIN. 2.5 TYP. Page 134 of 143 RL78/H1D 3.8.2 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Internal voltage boosting method (1) 1/3 bias method (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter LCD output voltage variation range Symbol VL1 Conditions C1 to C4 Note 1 = 0.47 µF Note 2 MIN. TYP. MAX. Unit VLCD = 04H 0.90 1.00 1.08 V VLCD = 05H 0.95 1.05 1.13 V VLCD = 06H 1.00 1.10 1.18 V VLCD = 07H 1.05 1.15 1.23 V VLCD = 08H 1.10 1.20 1.28 V VLCD = 09H 1.15 1.25 1.33 V VLCD = 0AH 1.20 1.30 1.38 V VLCD = 0BH 1.25 1.35 1.43 V VLCD = 0CH 1.30 1.40 1.48 V VLCD = 0DH 1.35 1.45 1.53 V VLCD = 0EH 1.40 1.50 1.58 V VLCD = 0FH 1.45 1.55 1.63 V VLCD = 10H 1.50 1.60 1.68 V VLCD = 11H 1.55 1.65 1.73 V VLCD = 12H 1.60 1.70 1.78 V VLCD = 13H 1.65 1.75 1.83 V = 0.47 µF 2 VL1 - 0.1 2 VL1 2 VL1 V C1 to C4 Note 1 = 0.47 µF 3 VL1- 0.15 3 VL1 3 VL1 V Doubler output voltage VL2 C1 to C4 Tripler output voltage VL4 Reference voltage setup time Note 2 tVWAIT1 Voltage boost wait time Note 3 tVWAIT2 Note 1. Note 2. Note 3. Note 1 C1 to C4 Note 1 = 0.47µF 5 ms 500 ms This is a capacitor that is connected between voltage pins used to drive the LCD. C1: A capacitor connected between CAPH and CAPL C2: A capacitor connected between VL1 and GND C3: A capacitor connected between VL2 and GND C4: A capacitor connected between VL4 and GND C1 = C2 = C3 = C4 = 0.47 µF±30% This is the time required to wait from when the reference voltage is specified by using the VLCD register (or when the internal voltage boosting method is selected (by setting the MDSET1 and MDSET0 bits of the LCDM0 register to 01B) if the default value reference voltage is used) until voltage boosting starts (VLCON = 1). This is the wait time from when voltage boosting is started (VLCON = 1) until display is enabled (LCDON = 1). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 135 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) (2) 1/4 bias method (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol LCD output voltage variation range VL1 Conditions C1 to C5 Note 1 = 0.47 µF Doubler output voltage VL2 Tripler output voltage VL3 Quadruply output voltage VL4 Reference voltage setup time Voltage boost wait time Note 1. Note 2. Note 3. Note 2 Note 3 Note 2 MIN. TYP. MAX. Unit VLCD = 04H 0.90 1.00 1.08 V VLCD = 05H 0.95 1.05 1.13 V VLCD = 06H 1.00 1.10 1.18 V VLCD = 07H 1.05 1.15 1.23 V VLCD = 08H 1.10 1.20 1.28 V VLCD = 09H 1.15 1.25 1.33 V VLCD = 0AH 1.20 1.30 1.38 V C1 to C5 Note 1 = 0.47 µF 2 VL1 - 0.08 2 VL1 2 VL1 V C1 to C5 Note 1 = 0.47 µF 3 VL1 - 0.12 3 VL1 3 VL1 V C1 to C5 Note 1 = 0.47 µF 4 VL1 - 0.16 4 VL1 4 VL1 V C1 to C5 Note 1 tVWAIT1 tVWAIT2 = 0.47µF 5 ms 500 ms This is a capacitor that is connected between voltage pins used to drive the LCD. C1: A capacitor connected between CAPH and CAPL C2: A capacitor connected between VL1 and GND C3: A capacitor connected between VL2 and GND C4: A capacitor connected between VL3 and GND C5: A capacitor connected between VL4 and GND C1 = C2 = C3 = C4 = C5 = 0.47 µF±30% This is the time required to wait from when the reference voltage is specified by using the VLCD register (or when the internal voltage boosting method is selected (by setting the MDSET1 and MDSET0 bits of the LCDM0 register to 01B) if the default value reference voltage is used) until voltage boosting starts (VLCON = 1). This is the wait time from when voltage boosting is started (VLCON = 1) until display is enabled (LCDON = 1). R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 136 of 143 RL78/H1D 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) 3.8.3 Capacitor split method (1) 1/3 bias method (TA = -40 to +85°C, 2.2 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. VL4 C1 to C4 = 0.47 µF VL2 voltage VL2 C1 to C4 = 0.47 µF Note 2 2/3 VL4 - 0.1 2/3 VL4 2/3 VL4 + 0.1 V VL1 voltage VL1 C1 to C4 = 0.47 µF Note 2 1/3 VL4 - 0.1 1/3 VL4 1/3 VL4 + 0.1 V Capacitor split wait time Note 1 tVWAIT Note 1. Note 2. VDD Unit VL4 voltage Note 2 V 100 ms This is the wait time from when voltage bucking is started (VLCON = 1) until display is enabled (LCDON = 1). This is a capacitor that is connected between voltage pins used to drive the LCD. C1: A capacitor connected between CAPH and CAPL C2: A capacitor connected between VL1 and GND C3: A capacitor connected between VL2 and GND C4: A capacitor connected between VL4 and GND C1 = C2 = C3 = C4 = 0.47 µF±30% R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 137 of 143 RL78/H1D 3.9 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) RAM Data Retention Characteristics (TA = -40 to +85°C, VSS = 0 V) Parameter Data retention supply voltage Symbol Conditions MIN. VDDDR TYP. MAX. Unit 5.5 V 1.46 Note The value depends on the POR detection voltage. When the voltage drops, the RAM data is retained before a POR reset is effected, but RAM data is not retained when a POR reset is effected. Note Operation mode STOP mode RAM data retention VDD VDDDR STOP instruction execution Standby release signal (interrupt request) 3.10 Flash Memory Programming Characteristics (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol Conditions MIN. System clock frequency fCLK 1.8 V ≤ VDD ≤ 5.5 V Number of code flash rewrites Cerwr Retained for 20 years TA = 85°C Number of data flash rewrites Retained for 1 year TA = 25°C Notes 1, 2, 3 Retained for 5 years TA = 85°C 100,000 Retained for 20 years TA = 85°C 10,000 TYP. 1 MAX. Unit 24 MHz 1,000 Times Notes 1, 2, 3 Note 1. Note 2. Note 3. 3.11 1,000,000 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite. When using flash memory programmer and Renesas Electronics self-programming library These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics Corporation. Dedicated Flash Memory Programmer Communication (UART) (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Transfer rate R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Symbol Conditions During serial programming MIN. 115,200 TYP. MAX. Unit 1,000,000 bps Page 138 of 143 RL78/H1D 3.12 3. ELECTRICAL SPECIFICATIONS (R5F11R) (D: TA = -40 to +85°C) Timing of Entry to Flash Memory Programming Modes (TA = -40 to +85°C, 1.8 V ≤ AVDD = VDD ≤ 5.5 V, AVSS = VSS = 0 V) Parameter Symbol How long from when an external reset ends until the initial communication settings are specified tSUINIT POR and LVD reset must end before the external reset ends. How long from when the TOOL0 pin is placed at the low level until an external reset ends tSU POR and LVD reset must end before the external reset ends. 10 µs How long the TOOL0 pin must be kept at the low level after an external reset ends (excluding the processing time of the firmware to control the flash memory) tHD POR and LVD reset must end before the external reset ends. 1 ms Conditions MIN. TYP. MAX. Unit 100 ms RESET 723 µs + tHD processing 1-byte data for setting mode time TOOL0 tSU tSUINIT The low level is input to the TOOL0 pin. The external reset ends (POR and LVD reset must end before the external reset ends). The TOOL0 pin is set to the high level. Setting of the flash memory programming mode by UART reception and complete the baud rate setting. Remark tSUINIT: The segment shows that it is necessary to finish specifying the initial communication settings within 100 ms from when the external resets end. How long from when the TOOL0 pin is placed at the low level until a pin reset ends tSU: tHD: How long to keep the TOOL0 pin at the low level from when the external resets end (excluding the processing time of the firmware to control the flash memory) Remark R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 139 of 143 RL78/H1D 4. PACKAGE DRAWINGS 4. PACKAGE DRAWINGS 4.1 48-pin products R5F11NGGAFB, R5F11NGFAFB JEITA Package Code P-LFQFP48-7x7-0.50 RENESAS Code PLQP0048KB-A Previous Code 48P6Q-A MASS[Typ.] 0.2g HD *1 D 36 25 37 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 24 bp c c1 *2 E HE b1 Reference Dimension in Millimeters Symbol 48 13 1 ZE Terminal cross section 12 c A F A2 Index mark ZD S A1 L D E A2 HD HE A A1 bp b1 c c1 y S R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 *3 bp Detail F x 8.8 8.8 0 0.17 0.09 0° L1 e Min 6.9 6.9 e x y ZD ZE L L1 0.35 Nom Max 7.0 7.1 7.0 7.1 1.4 9.0 9.2 9.0 9.2 1.7 0.1 0.2 0.22 0.27 0.20 0.145 0.20 0.125 8° 0.5 0.08 0.10 0.75 0.75 0.5 0.65 1.0 Page 140 of 143 RL78/H1D 4.2 4. PACKAGE DRAWINGS 64-pin products R5F11NLGAFB, R5F11NLFAFB JEITA Package Code P-LFQFP64-10x10-0.50 RENESAS Code PLQP0064KB-A Previous Code 64P6Q-A / FP-64K / FP-64KV MASS[Typ.] 0.3g HD *1 D 48 33 49 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 32 bp 64 1 c1 Terminal cross section ZE 17 Reference Dimension in Millimeters Symbol c E *2 HE b1 16 Index mark ZD c A *3 A1 y S e A2 F S bp L x L1 Detail F R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 D E A2 HD HE A A1 bp b1 c c1 e x y ZD ZE L L1 Min Nom Max 9.9 10.0 10.1 9.9 10.0 10.1 1.4 11.8 12.0 12.2 11.8 12.0 12.2 1.7 0.05 0.1 0.15 0.15 0.20 0.25 0.18 0.09 0.145 0.20 0.125 0° 8° 0.5 0.08 0.08 1.25 1.25 0.35 0.5 0.65 1.0 Page 141 of 143 RL78/H1D 4. PACKAGE DRAWINGS R5F11PLGABG, R5F11PLFABG R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 Page 142 of 143 RL78/H1D 4.3 4. PACKAGE DRAWINGS 80-pin products R5F11NMGAFB, R5F11NMFAFB, R5F11NMEAFB R5F11RMGDFB JEITA Package Code P-LFQFP80-12x12-0.50 RENESAS Code PLQP0080KB-A Previous Code 80P6Q-A MASS[Typ.] 0.5g HD *1 D 60 41 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 40 61 bp E c *2 HE c1 b1 Reference Dimension in Millimeters Symbol ZE Terminal cross section 80 21 1 20 ZD Index mark F bp c A *3 A1 y S e A2 S L x L1 Detail F R01DS0318EJ0100 Rev. 1.00 Apr 13, 2018 D E A2 HD HE A A1 bp b1 c c1 e x y ZD ZE L L1 Min Nom Max 11.9 12.0 12.1 11.9 12.0 12.1 1.4 13.8 14.0 14.2 13.8 14.0 14.2 1.7 0.1 0.2 0 0.15 0.20 0.25 0.18 0.09 0.145 0.20 0.125 0° 10° 0.5 0.08 0.08 1.25 1.25 0.3 0.5 0.7 1.0 Page 143 of 143 REVISION HISTORY Rev. Date 1.00 Apr 13 2018 RL78/H1D Datasheet Description Page — Summary First Edition issued SuperFlash is a registered trademark of Silicon Storage Technology, Inc. in several countries including the United States and Japan. Caution: This product uses SuperFlash® technology licensed from Silicon Storage Technology, Inc. All trademarks and registered trademarks are the property of their respective owners. C-1 NOTES FOR CMOS DEVICES (1) VOLTAGE APPLICATION WAVEFORM AT INPUT PIN: Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN). (2) HANDLING OF UNUSED INPUT PINS: Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must be judged separately for each device and according to related specifications governing the device. (3) PRECAUTION AGAINST ESD: A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors should be grounded. The operator should be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with mounted semiconductor devices. (4) STATUS BEFORE INITIALIZATION: Power-on does not necessarily define the initial status of a MOS device. Immediately after the power source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the reset signal is received. A reset operation must be executed immediately after power-on for devices with reset functions. (5) POWER ON/OFF SEQUENCE: In the case of a device that uses different power supplies for the internal operation and external interface, as a rule, switch on the external power supply after switching on the internal power supply. When switching the power supply off, as a rule, switch off the external power supply and then the internal power supply. Use of the reverse power on/off sequences may result in the application of an overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements due to the passage of an abnormal current. The correct power on/off sequence must be judged separately for each device and according to related specifications governing the device. (6) INPUT OF SIGNAL DURING POWER OFF STATE : Do not input signals or an I/O pull-up power supply while the device is not powered. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Input of signals during the power off state must be judged separately for each device and according to related specifications governing the device. Notice 1. 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Tel: +1-408-432-8888, Fax: +1-408-434-5351 Renesas Electronics Canada Limited 9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3 Tel: +1-905-237-2004 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. Room 1709 Quantum Plaza, No.27 ZhichunLu, Haidian District, Beijing, 100191 P. R. China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, 200333 P. R. China Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 Renesas Electronics Hong Kong Limited Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics India Pvt. Ltd. No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India Tel: +91-80-67208700, Fax: +91-80-67208777 Renesas Electronics Korea Co., Ltd. 17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea Tel: +82-2-558-3737, Fax: +82-2-558-5338 © 2018 Renesas Electronics Corporation. All rights reserved. Colophon 7.0
R5F11NMEAFB#30 价格&库存

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R5F11NMEAFB#30
  •  国内价格 香港价格
  • 1+35.662021+4.43959
  • 10+26.9898310+3.35998
  • 25+24.8111425+3.08876
  • 119+22.18318119+2.76160
  • 357+20.91335357+2.60352

库存:357