RJE0601JPE

Preliminary Datasheet RJE0601JPE Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. REJ03G1906-0200 Rev.2.00 Jun 29, 2010 Features      High endurance capability against to the short circuit. Built-in the over temperature shut-down circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS: 22 m Typ, 27 m Max (VGS = –10 V) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) D G 1 2 3 Temperature Sensing Circuit Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 1. Gate 2. Drain (Flange) 3. Source Latch Circuit S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage VGSS Drain current ID Body-drain diode reverse drain current IDR Avalanche current IAP Note 1 Avalanche energy EAR Note 2 Channel dissipation Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25C 2. Tch = 25C, Rg  50  3. It provides by the current limitation lower bound value. Ratings –60 –16 2.5 –40 Note 3 –40 –15 964 50 150 –55 to +150 Unit V V V A A A mJ W C C REJ03G1906-0200 Rev.2.00 Jun 29, 2010 Page 1 of 6 RJE0601JPE Preliminary Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Notes; 4. Pulse test Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min –3.5 — — — — — — — –3.5 –40 Typ — — — — — –0.8 –0.35 175 — –60 Max — –1.2 –100 –50 –1 — — — –12 — Unit V V A A A mA mA C V A Test Conditions Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Vi = –1.2 V, VDS = 0 Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Channel temperature (dv/dt VGS  500 V/ms) VGS = –12 V, VDS = –10 V Note 4 Electrical Characteristics (Ta = 25°C) Item Drain current Symbol ID1 ID2 ID3 V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS VGS(off) |yfs| RDS(on) RDS(on) Coss td(on) tr td(off) tf VDF trr tos1 Min — — –40 –60 –16 2.5 — — — — — — — –2.2 8.4 — — — — — — — — — — Typ — — –60 — — — — — — — –0.8 –0.35 — — 27 26 22 860 12.6 12.5 3.7 2.2 –0.95 100 2.3 Max –40 –10 — — — — –100 –50 –1 100 — — –10 –3.4 — 45 27 — — — — — — — — Unit A mA A V V V A A A A mA mA A V S m m pF s s s s V ns ms Test Conditions VGS = –3.5 V, VDS = –10 V VGS = –1.2 V, VDS = –10 V VGS = –12 V, VDS = –10 V Note 5 ID = –10 mA, VGS = 0 IG = –800 A, VDS = 0 IG = 100 A, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VGS = –1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –20 A, VDS = –10 V Note 5 ID = –20 A, VGS = –6 V Note 5 ID = –20 A, VGS = –10 V Note 5 VDS = –10 V, VGS = 0, f = 1MHz VGS = –10 V, ID= –20 A, RL = 1.5  Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down Note 6 operation time IF = –40 A, VGS = 0 IF = –40 A, VGS = 0 diF/dt = 50 A/s VGS = –5 V, VDD = –16 V Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. REJ03G1906-0200 Rev.2.00 Jun 29, 2010 Page 2 of 6 RJE0601JPE Preliminary Main Characteristics Power vs. Temperature Derating 80 −1000 Maximum Safe Operation Area Ta = 25°C Thermal shut down operation area Channel Dissipation Pch (W) Drain Current ID (A) 60 −100 1 m s 40 −10 DC Operation (Tc = 25°C) Operation in this area is limited RDS(on) 20 −1 PW = 10 ms 0 0 50 100 150 200 −0.1 −0.1 −1 −10 −100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics −100 Pulse Test −40 Typical Transfer Characteristics VDS = −10 V Pulse Test Drain Current ID (A) Drain Current ID (A) −10 V −50 −8 V −6 V −30 −5.5 V −5 V −4.5 V VGS = −4 V −20 Tc = 75°C 25°C −25°C −10 0 −5 −10 −0 0 −2 −4 −6 −8 −10 Drain to Source Voltage VDS (V) Drain Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) −2000 Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current 1000 Pulse Test −1500 Static Drain to Source On State Resistance RDS(on) (mΩ) 100 VGS = −6 V 10 −10 V −1000 −500 −5 A ID = −20 A −10 A 0 −2 −4 −6 −8 −10 −12 1 −0.1 −1 −10 −100 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1906-0200 Rev.2.00 Jun 29, 2010 Page 3 of 6 RJE0601JPE Static Drain to Source On State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 50 Pulse Test 40 ID = −20 A −10 A −5 A 100 Tc = −25°C 10 25°C 1 75°C Preliminary Forward Transfer Admittance vs. Drain Current Static Drain to Source On State Resistance RDS(on) (mΩ) 30 VGS = −6 V ID = −20 A −10 A, −5 A 20 −10 V 10 −50 −25 0 25 50 75 100 125 150 0.1 −0.1 VDS = −10 V Pulse Test −1 −10 −100 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time 1000 Drain Current ID (A) Switching Characteristics 100 VGS = −10 V, VDD = −30 V PW = 300 μs, duty ≤ 1 % Reverse Recovery Time trr (ns) Switching Time t (μs) td(on) 10 tr 100 td(off) 10 −0.1 di / dt = 50 A /μs VGS = 0, Ta = 25°C −1 −10 −100 tf 1 −0.1 −1 −10 −100 Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage 10000 Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage –40 Reverse Drain Current IDR (A) VGS = 0 f = 1 MHz Pulse Test –30 –10 V –20 –5 V –10 VGS = 0 V 0 –0.5 –1.0 –1.5 Capacitance C (pF) 1000 Coss 100 −0 −10 −20 −30 −40 −50 −60 Drain to Source Voltage VDS (V) Source to Drain Voltage VSD (V) REJ03G1906-0200 Rev.2.00 Jun 29, 2010 Page 4 of 6 RJE0601JPE Gate to Source Voltage vs. Shutdown Time of Load-Short Test Preliminary Shutdown Case Temperature vs. Gate to Source Voltage Gate to Source Voltage VGS (V) −12 −10 −8 −6 −4 −2 0 0.0001 Shutdown Case Temperature Tc (°C) 200 180 160 VDD = −16 V 140 ID = −5 A dv/dt VGS ≥ 500 V/ms 0 −2 −4 −6 −8 −10 120 100 0.001 0.01 0.1 Shutdown Time of Load-Short Test Pw (S) Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 θch - c(t) = γs (t) x θch - c θch - c = 2.5°C/W, Tc = 25°C PDM 0.02 0.01 1sh ot p D= PW T PW T ulse 0.01 0.00001 0.05 0.0001 0.001 0.01 0.1 1 10 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = –30 V Vout td(on) Vout Monitor Vin 10% 90% 90% 90% Waveform Vin –10 V 50 Ω 10% tr td(off) 10% tf REJ03G1906-0200 Rev.2.00 Jun 29, 2010 Page 5 of 6 RJE0601JPE Preliminary Package Dimensions Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm 4.44 ± 0.2 10.2 ± 0.3 (1.4) 8.6 ± 0.3 + 0.3 – 0.5 10.0 (1.5) (1.5) 2.49 ± 0.2 02 0.1 + 0..1 – 7.8 7.0 2.2 1.37 ± 0.2 1.3 ± 0.2 2.54 ± 0.5 03 3.0 + 0..5 – 02 0.86 + 0..1 – 0.4 ± 0.1 2.54 ± 0.5 Ordering Information Part No. RJE0601JPE-00-J3 Quantity 1000 pcs Taping Shipping Container REJ03G1906-0200 Rev.2.00 Jun 29, 2010 1.7 1.3 ± 0.15 7.8 6.6 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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