RJE0603JPE

Preliminary Datasheet RJE0603JPE Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. REJ03G1907-0100 Rev.1.00 Apr 01, 2010 Features     High endurance capability against to the short circuit. Built-in the over temperature shut-down circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) D 4 G 1 2 3 Temperature Sensing Circuit Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 1. Gate 2. Drain 3. Source 4. Drain Latch Circuit S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage VGSS Drain current ID Body-drain diode reverse drain current IDR Avalanche current IAP Note 1 Avalanche energy EAR Note 2 Channel dissipation Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25C 2. Tch = 25C, Rg  50  3. It provides by the current limitation lower bound value. Ratings –60 –16 2.5 –50 Note3 –50 –15 964 100 150 –55 to +150 Unit V V V A A A mJ W C C REJ03G1907-0100 Rev.1.00 Apr 01, 2010 Page 1 of 6 RJE0603JPE Preliminary Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Notes: 4. Pulse test Symbol VIH VIL IIH1 IIH2 IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min –3.5 — — — — — — –3.5 –50 Typ — — — — –0.3 –0.11 175 — — Max — –1.2 –100 –50 — — — –12 — Unit V V A A mA mA C V A Test Conditions Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Vi = –12 V, VDS = 0 Vi = –4.6 V, VDS = 0 Channel temperature VGS = –12 V, VDS = –10 V Note 4 Electrical Characteristics (Ta = 25°C) Item Drain current Symbol ID1 ID2 ID3 Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IGSS IGS(OP)1 IGS(OP)2 IDSS VGS(off) RDS(on) RDS(on) Coss td(on) tr td(off) tf VDF trr tos1 Min — — –50 –60 –16 2.5 — — — — — — –3.4 — — — — — — — — — — Typ — — — — — — — — — –0.8 –0.11 — — 16 12 1400 77.2 72.7 7.7 7.7 0.92 133 6.3 Max –100 –10 — — — — –200 –800 100 — — –10 –4.6 30 15 — — — — — — — — Unit A mA A V V V A A A mA mA A V m m pF s s s s V ns ms Test Conditions VGS = –3.5 V, VDS = –10 V VGS = –1.2 V, VDS = –10 V VGS = –12 V, VDS = –10 V Note 5 ID = –10 mA, VGS = 0 IG = –800 A, VDS = 0 IG = 100 A, VDS = 0 VGS = –8 V, VDS = 0 VGS = –16 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = –12 V, VDS = 0 VGS = –4.6 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –25 A, VGS = –6 V Note 5 ID = –25 A, VGS = –10 V Note 5 VDS = –10 V, VGS = 0, f = 1MHz VGS = –10 V, ID= –25 A, RL = 1.2  Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down Note 6 operation time IF = –50 A, VGS = 0 IF = –50 A, VGS = 0 diF/dt = 50 A/s VGS = –5 V, VDD = –16 V Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. REJ03G1907-0100 Rev.1.00 Apr 01, 2010 Page 2 of 6 RJE0603JPE Preliminary Main Characteristics Power vs. Temperature Derating 160 −1000 Maximum Safe Operation Area Ta = 25°C Channel Dissipation Pch (W) 120 Drain Current ID (A) −100 Thermal shut down operation area PW 80 = 10 1 s m −10 s m 40 DC Operation (Tc = 25°C) Operation in this area is limited RDS(on) 0 0 50 100 150 200 −1 −0.01 −0.1 −1 −10 −100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics −100 −80 −60 −6 V −40 −20 Pulse Test 0 −2 −4 −6 −8 −10 VGS = −4.5 V −100 −10 −1 Typical Transfer Characteristics Drain Current ID (A) −10 V −8 V Drain Current ID (A) 150°C −0.1 −0.01 25°C Tc = −40°C VDS = −10 V Pulse Test −2 −4 −6 −8 −10 −0.001 0 Drain to Source Voltage VDS (V) Drain Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) −800 −700 −600 −500 −400 −300 −200 −100 0 −2 −5 A −3 −4 −5 −6 −7 −8 −9 −10 −10 A ID = −25 A Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current 1000 Static Drain to Source On State Resistance RDS(on) (mΩ) 100 −6 V 10 VGS = −10 V 1 Pulse Test 0.1 −0.1 −1 −10 −100 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1907-0100 Rev.1.00 Apr 01, 2010 Page 3 of 6 RJE0603JPE Static Drain to Source On State Resistance vs. Temperature ID = −25 A −10 A −5 A Preliminary Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 1000 di / dt = 50 A / μs VGS = 0, Ta = 25°C Static Drain to Source On State Resistance RDS(on) (mΩ) 30 Pulse Test 25 20 −25 A ID = −5 A, −10 A 100 15 −6 V 10 VGS = −10 V 5 -50 -25 0 25 50 75 100 125 150 10 −0.1 −1 −10 −100 Case Temperature Tc (°C) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage −50 Switching Characteristics 100 Reverse Drain Current IDR (A) Switching Time t (μs) td(on) tr −40 −30 −20 −10 V VGS = 0 V, 5 V 10 tf td(off) VGS = −10 V, VDD = −30 V PW = 300 μs, duty ≤ 1 % −5 V −10 Pulse Test 0 −0.4 −0.8 −1.2 −1.6 −2.0 1 −1 −10 −100 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Source to Drain Voltage VSD (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test Gate to Source Voltage VGS (V) −12 −10 −8 −6 −4 −2 0 0.001 10000 Capacitance C (pF) VDD = −16 V 1000 Coss 100 0 −10 −20 −30 −40 −50 −60 0.003 0.01 Drain to Source Voltage VDS (V) Shutdown Time of Load-Short Test Pw (s) REJ03G1907-0100 Rev.1.00 Apr 01, 2010 Page 4 of 6 RJE0603JPE Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) 200 Preliminary 180 160 140 120 100 0 −2 −4 −6 ID = −5 A −8 −10 Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.3 0.5 0.2 0.1 0.1 0.02 1 0.0 1 o sh tp θ ch- c(t) = γ s (t) • θch- c θ ch- c = 1.25°C/W, Tc = 25°C PDM uls e D= PW T 0.03 PW T 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = –30 V Vout td(on) Vout Monitor Vin 10% 90% 90% 90% Waveform Vin –10 V 50 Ω 10% tr td(off) 10% tf REJ03G1907-0100 Rev.1.00 Apr 01, 2010 Page 5 of 6 RJE0603JPE Preliminary Package Dimensions Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm 4.44 ± 0.2 10.2 ± 0.3 (1.4) 8.6 ± 0.3 + 0.3 – 0.5 10.0 (1.5) (1.5) 2.49 ± 0.2 02 0.1 + 0..1 – 7.8 7.0 2.2 1.37 ± 0.2 1.3 ± 0.2 2.54 ± 0.5 03 3.0 + 0..5 – 02 0.86 + 0..1 – 0.4 ± 0.1 2.54 ± 0.5 Ordering Information Part No. RJE0603JPE-00-J3 Quantity 1000 pcs Shipping Container Taping (Sinistrorse) REJ03G1907-0100 Rev.1.00 Apr 01, 2010 1.7 1.3 ± 0.15 7.8 6.6 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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