RJE0609JPD

Preliminary Datasheet RJE0609JPD Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. REJ03G1908-0100 Rev.1.00 Apr 01, 2010 Features       Logic level operation (–6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance 100 m Max (VGS = –10 V) Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D 4 1. Gate 2. Drain 3. Source 4. Drain G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit 1 Current Limitation Circuit 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage VGSS Drain current ID Note3 Body-drain diode reverse drain current IDR Avalanche current IAP Note 2 Avalanche energy EAR Note 2 Channel dissipation Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25C 2. Tch = 25C, Rg  50  3. It provides by the current limitation lower bound value. Ratings –60 –16 2.5 –4 –4 –4 68 30 150 –55 to +150 Unit V V V A A A mJ W C C REJ03G1908-0100 Rev.1.00 Apr 01, 2010 Page 1 of 6 RJE0609JPD Preliminary Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Notes; 4. Pulse test Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min –3.5 — — — — — — — –3.5 –4 Typ — — — — — –0.8 –0.35 175 — — Max — –1.2 –100 –50 –1 — — — –12 — Unit V V A A A mA mA C V A Test Conditions Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Vi = –1.2 V, VDS = 0 Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Channel temperature (dv/dt VGS  500 V/ms) VGS = –12 V, VDS = –10 V Note 4 Electrical Characteristics (Ta = 25°C) Item Drain current Symbol ID1 ID2 ID3 V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS VGS(off) |yfs| RDS(on) RDS(on) Coss td(on) tr td(off) tf VDF trr tos1 Min — — –4 –60 –16 2.5 — — — — — — — –2.2 2 — — — — — — — — — — Typ — — — — — — — — — — –0.8 –0.35 — — 4.3 102 79 290 2.97 2.58 1.55 1.05 0.84 81 5.7 Max –4 –10 — — — — –100 –50 –1 100 — — –10 –3.4 — 170 100 — — — — — — — — Unit A mA A V V V A A A A mA mA A V S m m pF s s s s V ns ms Test Conditions VGS = –3.5 V, VDS = –10 V VGS = –1.2 V, VDS = –10 V VGS = –12 V, VDS = –10 V Note 5 ID = –10 mA, VGS = 0 IG = –800 A, VDS = 0 IG = 100 A, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VGS = –1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –2 A, VDS = –10 V Note 5 ID = –2 A, VGS = –6 V Note 5 ID = –2 A, VGS = –10 V Note 5 VDS = –10 V, VGS = 0, f = 1MHz VGS = –10 V, ID= –2 A, RL = 15  Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down Note 6 operation time IF = –4 A, VGS = 0 IF = –4 A, VGS = 0 diF/dt = 50 A/s VGS = –6 V, VDD = –16 V Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. REJ03G1908-0100 Rev.1.00 Apr 01, 2010 Page 2 of 6 RJE0609JPD Preliminary Main Characteristics Power vs. Temperature Derating 80 −100 Maximum Safe Operation Area Ta = 25°C Channel Dissipation Pch (W) 60 Drain Current ID (A) Thermal shut down operation area −10 1 s m 40 −1 PW = 10 ms DC Operation (Tc = 25°C) Operation in this area is limited RDS(on) 20 0 0 50 100 150 200 −0.1 −0.01 −0.1 −1 −10 −100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics −10 V −4 −7 V −6 V −5.5 V −5 V −4.5 V −4 V −4 Pulse Test Typical Transfer Characteristics VDS = −10 V Pulse Test Drain Current ID (A) Drain Current ID (A) −3 −3 −2 −2 150°C 25°C Tc = −40°C −1 −1 0 VGS = 0 V 0 −2 −4 −6 −8 −10 0 0 −2 −4 −6 −8 −10 Drain to Source Voltage VDS (V) Drain Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) −2000 −1600 −1200 −800 −400 −0.5 A 0 0 −2 −4 −6 −8 −10 −1 A ID = −2 A Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current 1000 Pulse Test Static Drain to Source On State Resistance RDS(on) (mΩ) 100 −6 V VGS = −10 V 10 1 −0.1 −1 −10 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1908-0100 Rev.1.00 Apr 01, 2010 Page 3 of 6 RJE0609JPD Static Drain to Source On State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 200 Pulse Test ID = −0.5 A −1 A −2 A −6 V ID = −0.5 A −1 A −2 A 75 100 125 150 100 Preliminary Forward Transfer Admittance vs. Drain Current VDS = −10 V Pulse Test Static Drain to Source On State Resistance RDS(on) (mΩ) 150 10 Tc = −40°C 25°C 1 150°C 100 VGS = −10 V 50 −50 −25 0 25 50 0.1 −0.1 −1 −10 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 1000 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 Switching Characteristics Switching Time t (μs) td(on) tr td(off) 1 tf 100 10 −0.1 −0.3 −1 0.1 −0.1 VGS = −10 V, VDD = −30 V PW = 300 μs, duty ≤ 1 % −1 −10 Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage −5 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 1000 Reverse Drain Current IDR (A) Capacitance C (pF) −4 −3 −5 V −2 −1 −10 V Pulse Test 0 −0.4 −0.8 −1.2 −1.6 −2.0 VGS = 0 V, 5 V, 10 V Coss 100 VGS = 0 f = 1 MHz 10 0 −10 −20 −30 −40 −50 −60 Source to Drain Voltage VSD (V) Drain to Source Voltage VDS (V) REJ03G1908-0100 Rev.1.00 Apr 01, 2010 Page 4 of 6 RJE0609JPD Gate to Source Voltage vs. Shutdown Time of Load-Short Test Gate to Source Voltage VGS (V) −16 −14 −12 −10 −8 −6 −4 −2 0 1 10 100 VDD = −16 V Preliminary Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) 200 180 160 140 ID = −1 A dv / dt VGS ≥ 500 V/ ms 0 −2 −4 −6 −8 −10 120 100 Shutdown Time of Load-Short Test Pw (ms) Normalized Transient Thermal Impedance γs (t) Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0 .01 h 1s ot pu lse θch - c(t) = γs (t) • θch - c θch - c = 4.17°C/W, Tc = 25°C PDM PW T D= PW T 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = –30 V Vout td(on) Vout Monitor Vin 10% 90% 90% 90% Waveform Vin –10 V 50 Ω 10% tr td(off) 10% tf REJ03G1908-0100 Rev.1.00 Apr 01, 2010 Page 5 of 6 RJE0609JPD Preliminary Package Dimensions Package Name DPAK(S) JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V MASS[Typ.] 0.28g Unit: mm 1.5 ± 0.5 6.5 ± 0.3 5.6 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 (5.1) 5.5 ± 0.5 1.2 Max 0 – 0.25 (1.2) 2.5 ± 0.5 1.0 Max. 2.29 ± 0.5 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 Ordering Information Part No. RJE0609JPD-00-J3 Quantity 3000 pcs Shipping Container Taping (Sinistrorse) REJ03G1908-0100 Rev.1.00 Apr 01, 2010 (5.1) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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