RJE0615JSP

Preliminary Datasheet RJE0615JSP Silicon P Channel MOS FET Series Power Switching Description R07DS0124EJ0200 (Previous: REJ03G1943-0100) Rev.2.00 Sep 01, 2010 This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features       Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on) : 53 m Typ, 65 m Max (VGS = –10 V) High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8 7 65 D 5 D 6 D 7 D 8 3 12 4 4 G Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Temperature Sensing Circuit Latch Circuit 1 S S 2 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol Ratings VDSS –60 VGSS –16 VGSS 2.5 Drain current ID Note3 –10 Body-drain diode reverse drain current IDR –10 Avalanche current IAP Note 2 –4.7 Avalanche energy EAR Note 2 94.7 Channel dissipation Pch Note 1 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1 1 Drive operation: When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s 2. Tch = 25C, Rg  50  3. It provides by the current limitation lower bound value. Unit V V V A A A mJ W C C R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 1 of 7 RJE0615JSP Preliminary Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Notes; 4. Pulse test Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min –3.5 — — — — — — — –3.5 –10 Typ — — — — — –0.8 –0.35 175 — — Max — –1.2 –100 –50 –10 — — — –12 — Unit V V A A A mA mA C V A Test Conditions Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Vi = –1.2 V, VDS = 0 Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Channel temperature (dv/dt VGS  500 V/ms) VGS = –12 V, VDS = –10 V Note 4 Electrical Characteristics (Ta = 25°C) Item Drain current Symbol ID1 ID2 ID3 V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS1 IDSS2 VGS(off) RDS(on) RDS(on) Coss td(on) tr td(off) tf VDF trr tos1 Min — — –10 –60 –16 2.5 — — — — — — — — –2.2 — — — — — — — — — — Typ — — — — — — — — — — –0.8 –0.35 — — — 70 53 356 4.4 4.5 2.0 1.6 –0.87 90 2.6 Max –4 –10 — — — — –100 –50 –10 100 — — –10 –10 –3.4 95 65 — — — — — — — — Unit A mA A V V V A A A A mA mA A A V m m pF s s s s V ns ms Test Conditions VGS = –3.5 V, VDS = –10 V VGS = –1.2 V, VDS = –10 V VGS = –12 V, VDS = –10 V Note 5 ID = –10 mA, VGS = 0 IG = –800 A, VDS = 0 IG = 100 A, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VGS = –1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –48 V, VGS = 0, Ta = 125C VDS = –10 V, ID = –1 mA ID = –5 A, VGS = –6 V Note 5 ID = –5 A, VGS = –10 V VDS = –10 V, VGS = 0, f = 1MHz VGS = –10 V, ID= –5 A, RL = 6  Note 5 Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down Note 6 operation time IF = –10 A, VGS = 0 IF = –10 A, VGS = 0 diF/dt = 50 A/s VGS = –6 V, VDD = –16 V Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 2 of 7 RJE0615JSP Preliminary Main Characteristics Power vs. Temperature Derating 4.0 100 Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm), (PW ≤ 10s) Maximum Safe Operation Area Ta = 25°C Thermal shut down operation area Channel Dissipation Pch (W) Drain Current ID (A) 3.0 10 PW 1 m s = 2.0 1 10 DC O pe ra ti o n (P m s 1.0 0.1 W Operation in this area is limited RDS(on) No te 7 ≤1 0s ) 0 0 50 100 150 200 0.01 −0.01 −0.1 −1 −10 −100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Note 7: When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics −10 −8 −6 −4 VGS = −4 V −2 Pulse Test 0 −2 −4 −6 −8 −10 0 −10 V −7 V −6 V −5.5 V −10 −8 −6 −4 −2 Typical Transfer Characteristics −40°C 25°C VDS = −10 V Pulse Test Tc = 150°C Drain Current ID (A) −5 V −4.5 V Drain Current ID (A) Tc = 150°C 25°C −40°C −2 −4 −6 −8 Drain to Source Voltage VDS (V) Drain Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) −1000 Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current 1000 Pulse Test 500 Static Drain to Source On State Resistance RDS(on) (mΩ) 200 100 50 VGS = −6 V −10 V −500 ID = −5 A −2 A −1 A 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −0 −2 −4 −6 −8 −10 −12 −14 −16 Gate to Source Voltage VGS (V) Drain Current ID (A) R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 3 of 7 RJE0615JSP Static Drain to Source On State Resistance vs. Temperature 150 Pulse Test 125 100 −1 A, −2 A ID = −5 A 1000 Preliminary Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) Static Drain to Source On State Resistance RDS(on) (mΩ) 75 VGS = −6 V 50 25 VGS = −10 V −2 A, −5 A −1 A 100 0 −50 −25 0 25 50 75 100 125 150 10 −0.1 di / dt = 50 A / μs VGS = 0, Ta = 25°C −1 −10 Case Temperature Tc (°C) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage −10 Switching Characteristics 10 Reverse Drain Current IDR (A) Pulse Test −8 −6 VGS = 0 V, 5 V −4 −2 VGS = −5 V Switching Time t (μs) td(on) tr td(off) tf VGS = −10 V, VDD = −30 V PW = 300 μs, duty ≤ 1 % −1 −10 1 −0.1 0 −0.4 −0.8 −1.2 −1.6 −2.0 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Gate to Source Voltage VGS (V) 10000 VGS = 0 f = 1 MHz −16 −14 −12 −10 −8 −6 −4 −2 0 1 Source to Drain Voltage VSD (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test Capacitance C (pF) 1000 VDD = −16 V 100 10 0 −10 −20 −30 −40 −50 −60 10 100 Drain to Source Voltage VDS (V) Shutdown Time of Load-Short Test Pw (ms) R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 4 of 7 RJE0615JSP Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) 200 Preliminary 180 160 140 ID = −1 A dv / dt VGS ≥ 500 V/ ms 0 −2 −4 −6 −8 −10 120 100 Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 1s h p ot θch − f(t) = γs (t) • θch − f θch − f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) uls e PDM PW T D= PW T 0.001 100 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform 1 • L • IAP2 • 2 VDSS VDSS – VDD V(BR)DSS IAP VDD ID VDS VDS Monitor L IAP Monitor EAR = Rg D.U.T Vin –10 V 50 Ω VDD 0 R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 5 of 7 RJE0615JSP Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = –30 V Vout td(on) Vout Monitor Vin 10% 90% 90% Preliminary Switching Time Waveform Vin –10 V 50 Ω 90% 10% tr td(off) 10% tf R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 6 of 7 RJE0615JSP Preliminary Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g *1 D F 8 5 *2 E HE bp Index mark 1 Z e 4 * 3 bp xM c Terminal cross section (Ni/Pd/Au plating) NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min L1 L D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 A 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 A1 y Detail F 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part No. RJE0615JSP-00-J3 Quantity 2500 pcs Taping Shipping Container R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 7 of 7 Notice 1. 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