0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
RJE0615JSP

RJE0615JSP

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    RJE0615JSP - Silicon P Channel MOS FET Series Power Switching - Renesas Technology Corp

  • 数据手册
  • 价格&库存
RJE0615JSP 数据手册
Preliminary Datasheet RJE0615JSP Silicon P Channel MOS FET Series Power Switching Description R07DS0124EJ0200 (Previous: REJ03G1943-0100) Rev.2.00 Sep 01, 2010 This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features       Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on) : 53 m Typ, 65 m Max (VGS = –10 V) High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8 7 65 D 5 D 6 D 7 D 8 3 12 4 4 G Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Temperature Sensing Circuit Latch Circuit 1 S S 2 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol Ratings VDSS –60 VGSS –16 VGSS 2.5 Drain current ID Note3 –10 Body-drain diode reverse drain current IDR –10 Avalanche current IAP Note 2 –4.7 Avalanche energy EAR Note 2 94.7 Channel dissipation Pch Note 1 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1 1 Drive operation: When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s 2. Tch = 25C, Rg  50  3. It provides by the current limitation lower bound value. Unit V V V A A A mJ W C C R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 1 of 7 RJE0615JSP Preliminary Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Notes; 4. Pulse test Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min –3.5 — — — — — — — –3.5 –10 Typ — — — — — –0.8 –0.35 175 — — Max — –1.2 –100 –50 –10 — — — –12 — Unit V V A A A mA mA C V A Test Conditions Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Vi = –1.2 V, VDS = 0 Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Channel temperature (dv/dt VGS  500 V/ms) VGS = –12 V, VDS = –10 V Note 4 Electrical Characteristics (Ta = 25°C) Item Drain current Symbol ID1 ID2 ID3 V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS1 IDSS2 VGS(off) RDS(on) RDS(on) Coss td(on) tr td(off) tf VDF trr tos1 Min — — –10 –60 –16 2.5 — — — — — — — — –2.2 — — — — — — — — — — Typ — — — — — — — — — — –0.8 –0.35 — — — 70 53 356 4.4 4.5 2.0 1.6 –0.87 90 2.6 Max –4 –10 — — — — –100 –50 –10 100 — — –10 –10 –3.4 95 65 — — — — — — — — Unit A mA A V V V A A A A mA mA A A V m m pF s s s s V ns ms Test Conditions VGS = –3.5 V, VDS = –10 V VGS = –1.2 V, VDS = –10 V VGS = –12 V, VDS = –10 V Note 5 ID = –10 mA, VGS = 0 IG = –800 A, VDS = 0 IG = 100 A, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VGS = –1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –48 V, VGS = 0, Ta = 125C VDS = –10 V, ID = –1 mA ID = –5 A, VGS = –6 V Note 5 ID = –5 A, VGS = –10 V VDS = –10 V, VGS = 0, f = 1MHz VGS = –10 V, ID= –5 A, RL = 6  Note 5 Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down Note 6 operation time IF = –10 A, VGS = 0 IF = –10 A, VGS = 0 diF/dt = 50 A/s VGS = –6 V, VDD = –16 V Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 2 of 7 RJE0615JSP Preliminary Main Characteristics Power vs. Temperature Derating 4.0 100 Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm), (PW ≤ 10s) Maximum Safe Operation Area Ta = 25°C Thermal shut down operation area Channel Dissipation Pch (W) Drain Current ID (A) 3.0 10 PW 1 m s = 2.0 1 10 DC O pe ra ti o n (P m s 1.0 0.1 W Operation in this area is limited RDS(on) No te 7 ≤1 0s ) 0 0 50 100 150 200 0.01 −0.01 −0.1 −1 −10 −100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Note 7: When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics −10 −8 −6 −4 VGS = −4 V −2 Pulse Test 0 −2 −4 −6 −8 −10 0 −10 V −7 V −6 V −5.5 V −10 −8 −6 −4 −2 Typical Transfer Characteristics −40°C 25°C VDS = −10 V Pulse Test Tc = 150°C Drain Current ID (A) −5 V −4.5 V Drain Current ID (A) Tc = 150°C 25°C −40°C −2 −4 −6 −8 Drain to Source Voltage VDS (V) Drain Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) −1000 Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current 1000 Pulse Test 500 Static Drain to Source On State Resistance RDS(on) (mΩ) 200 100 50 VGS = −6 V −10 V −500 ID = −5 A −2 A −1 A 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −0 −2 −4 −6 −8 −10 −12 −14 −16 Gate to Source Voltage VGS (V) Drain Current ID (A) R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 3 of 7 RJE0615JSP Static Drain to Source On State Resistance vs. Temperature 150 Pulse Test 125 100 −1 A, −2 A ID = −5 A 1000 Preliminary Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) Static Drain to Source On State Resistance RDS(on) (mΩ) 75 VGS = −6 V 50 25 VGS = −10 V −2 A, −5 A −1 A 100 0 −50 −25 0 25 50 75 100 125 150 10 −0.1 di / dt = 50 A / μs VGS = 0, Ta = 25°C −1 −10 Case Temperature Tc (°C) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage −10 Switching Characteristics 10 Reverse Drain Current IDR (A) Pulse Test −8 −6 VGS = 0 V, 5 V −4 −2 VGS = −5 V Switching Time t (μs) td(on) tr td(off) tf VGS = −10 V, VDD = −30 V PW = 300 μs, duty ≤ 1 % −1 −10 1 −0.1 0 −0.4 −0.8 −1.2 −1.6 −2.0 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Gate to Source Voltage VGS (V) 10000 VGS = 0 f = 1 MHz −16 −14 −12 −10 −8 −6 −4 −2 0 1 Source to Drain Voltage VSD (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test Capacitance C (pF) 1000 VDD = −16 V 100 10 0 −10 −20 −30 −40 −50 −60 10 100 Drain to Source Voltage VDS (V) Shutdown Time of Load-Short Test Pw (ms) R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 4 of 7 RJE0615JSP Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) 200 Preliminary 180 160 140 ID = −1 A dv / dt VGS ≥ 500 V/ ms 0 −2 −4 −6 −8 −10 120 100 Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 1s h p ot θch − f(t) = γs (t) • θch − f θch − f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) uls e PDM PW T D= PW T 0.001 100 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform 1 • L • IAP2 • 2 VDSS VDSS – VDD V(BR)DSS IAP VDD ID VDS VDS Monitor L IAP Monitor EAR = Rg D.U.T Vin –10 V 50 Ω VDD 0 R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 5 of 7 RJE0615JSP Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = –30 V Vout td(on) Vout Monitor Vin 10% 90% 90% Preliminary Switching Time Waveform Vin –10 V 50 Ω 90% 10% tr td(off) 10% tf R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 6 of 7 RJE0615JSP Preliminary Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g *1 D F 8 5 *2 E HE bp Index mark 1 Z e 4 * 3 bp xM c Terminal cross section (Ni/Pd/Au plating) NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min L1 L D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 A 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 A1 y Detail F 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part No. RJE0615JSP-00-J3 Quantity 2500 pcs Taping Shipping Container R07DS0124EJ0200 Rev.2.00 Sep 01, 2010 Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 http://www.renesas.com © 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0
RJE0615JSP 价格&库存

很抱歉,暂时无法提供与“RJE0615JSP”相匹配的价格&库存,您可以联系我们找货

免费人工找货