RJF0619JPD-00#J3

Target Specifications Datasheet RJF0619JPD 60V, 30A Silicon N Channel Thermal FET Power Switching R07DS1108EJ0100 Rev.1.00 Sep. 02, 2013 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features • • • • • • • • Logic level operation (4 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Power supply voltage applies 12 V and 24 V. AEC-Q101 Compliant Endurance capability against to ESD. Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D 4 G 1 2 3 Gate Resistor Temperature Sensing Circuit Latch Circuit 1. Gate 2. Drain 3. Source 4. Drain Current Limitation Circuit Gate Shut-down Circuit S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage VGSS Drain current ID Note3 Body-drain diode reverse drain current IDR Avalanche current IAP Note 2 Avalanche energy EAR Note 2 Channel dissipation Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25°C 2. Tch = 25°C, Rg ≥ 50 Ω 3. It provides by the current limitation lower bound value. R07DS1108EJ0100 Rev.1.00 Sep. 02, 2013 Ratings 60 16 –2.5 30 30 6.7 192 40 150 –55 to +150 Unit V V V A A A mJ W °C °C Page 1 of 7 RJF0619JPD Target Specifications Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Note; Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min 3.5 — — — — — — — 3.5 30 Typ — — — — — 0.8 0.35 175 — — Max — 1.2 100 50 1 — — — 12 — Unit V V μA μA μA mA mA °C V A Test Conditions Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature VGS = 5 V, VDS = 10 V Note 4 4. Pulse test Electrical Characteristics (Ta = 25°C) Item Drain current Symbol Min Typ Max Unit ID1 ID2 ID3 — — 30 60 — — — — 45 10 — — A mA A V VGS = 3.5 V, VDS = 10 V Note 5 VGS = 1.2 V, VDS = 10 V VGS = 5 V, VDS = 10 V Note 5 ID = 10 mA, VGS = 0 16 –2.5 — — — — — — — 1.1 12 — — — — — — — — — 0.8 0.35 — — 27 33 25 523 — — 100 50 1 –100 — — 10 2.1 — 40 30 — V V μA μA μA μA mA mA μA V S mΩ mΩ pF IG = 800 μA, VDS = 0 IG = –100 μA, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 32 V, VGS = 0, Tc = 110°C VDS = 10 V, ID = 1 mA ID = 15 A, VDS = 10 V Note 5 ID = 15 A, VGS = 4 V Note 5 ID = 15 A, VGS = 10 V Note 5 VDS = 10 V, VGS = 0, f = 1MHz 3.8 13.5 4.1 7.3 0.9 — — — — — μs μs μs μs V VGS = 10 V, ID= 15 A, RL = 2 Ω IF = 30 A, VGS = 0 diF/dt = 50 A/μs VGS = 5 V, VDD = 16 V VGS = 5 V, VDD = 24 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS VGS(off) |yfs| Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Output capacitance RDS(on) RDS(on) Coss Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf Body-drain diode forward voltage VDF — — — — — Body-drain diode reverse recovery time trr — 110 — ns tos1 tos2 — — 0.34 0.23 — — ms ms Static drain to source on state resistance Over load shut down Note 6 operation time Test Conditions IF = 30 A, VGS = 0 Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. R07DS1108EJ0100 Rev.1.00 Sep. 02, 2013 Page 2 of 7 RJF0619JPD Target Specifications Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 ID (A) Thermal shut down Operation area 40 20 10 0 0 50 100 0.1 1 10 100 Typical Transfer Characteristics 30 Pulse Test 40 4V VGS = 3 V 20 10 ID (A) VDS = 10 V Pulse Test 9V 8V 7V Drain Current ID (A) Operation in this area is limited by RDS (on) Typical Output Characteristics 30 Drain Current PW = 10 ms Drain to Source Voltage VDS (V) 10 V 0 2 4 6 Drain to Source Voltage 700 600 500 ID = 15 A 400 300 10 A 200 5A 100 0 6 8 10 Gate to Source Voltage VGS (V) R07DS1108EJ0100 Rev.1.00 Sep. 02, 2013 25°C 10 0 1 2 3 4 Gate to Source Voltage 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Pulse Test 4 Tc = –40°C VDS (V) 800 2 20 0 10 8 Drain to Source Saturation Voltage vs. Gate to Source Voltage 0 1 Tc (°C) 50 0 1 ms DC Operation (Tc = 25°C) 0.1 0.01 200 150 Case Temperature Drain to Source Saturation Voltage VDS (on) (mV) 10 30 Drain Current Channel Dissipation Pch (W) 50 1000 Pulse Test 100 VGS = 4V 10V 10 1 1 10 Drain Current 100 ID (A) Page 3 of 7 Target Specifications Static Drain to Source on State Resistance vs. Temperature 60 Pulse Test ID = 15 A 55 10 A 50 15 A 5A 45 VGS = 4 V 40 35 10 A 5A 30 25 VGS = 10 V 20 15 10 –50 –25 0 25 50 75 100 125 150 Case Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) RJF0619JPD 100 25°C 10 150°C 1 0.1 0.1 10 100 Switching Characteristics 100 1000 VGS = 10 V, VDD = 30 V PW = 300 μs, duty ≤ 1 % 100 10 di / dt = 50 A / μs VGS = 0, Ta = 25°C 1 0.1 1 10 Reverse Drain Current Switching Time t (μs) Reverse Recovery Time trr (ns) 1 Drain Current ID (A) Tc (°C) Body-Drain Diode Reverse Recovery Time tr 10 tf td(off) td(on) 1 0.1 100 1 10 Drain Current IDR (A) 100 ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 10000 30 Pulse Test 25 3000 Capacitance C (pF) Reverse Drain Current IDR (A) Tc = –40°C VDS = 10 V Pulse Test 20 15 VGS = 5 V 10 0V 5 1000 Coss 300 100 30 VGS = 0 f = 1 MHz 10 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD (V) R07DS1108EJ0100 Rev.1.00 Sep. 02, 2013 0 10 20 30 40 50 60 Drain to Source Voltage VDS (V) Page 4 of 7 RJF0619JPD Target Specifications Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test 16 14 12 10 8 6 VDD = 16 V 24 V 4 2 0 10 100 1000 Normalized Transient Thermal Impedance γ s (t) Shutdown Time of Load-Short Test 10000 200 180 160 140 120 ID = 0.5 A 100 0 Pw (μS) 2 4 6 8 Gate to Source Voltage 10 VGS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.03 θch - c(t) = γs (t) • θch - c θch - c = 3.125°C/W, Tc = 25°C 0.05 0.02 1 0.0 1s 0.01 10 μ PDM t ho pu lse D= PW T PW T 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) R07DS1108EJ0100 Rev.1.00 Sep. 02, 2013 Page 5 of 7 RJF0619JPD Target Specifications Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 Ω 10% VDD = 30 V 90% td(on) Avalanche Test Circuit VDS Monitor 10% tr 90% td(off) tf Avalanche Waveform L EAR = 1 2 L • IAP2 • V(BR)DSS V(BR)DSS – VDD IAP Monitor V(BR)DSS Rg Vin 10 V D. U. T IAP VDD ID 50 Ω 0 R07DS1108EJ0100 Rev.1.00 Sep. 02, 2013 VDS VDD Page 6 of 7 RJF0619JPD Target Specifications Package Dimensions JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V MASS[Typ.] 0.28g Unit: mm 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) 6.5 ± 0.3 5.6 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Package Name DPAK(S) 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 0.8 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 Ordering Information Orderable Part Number RJF0619JPD-00-J3 Note: Quantity 3000 pcs Shipping Container Taping The symbol of 2nd "-" is occasionally presented as "#". R07DS1108EJ0100 Rev.1.00 Sep. 02, 2013 Page 7 of 7 Notice 1. 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