RJH60F4DPK-00-T0

Preliminary RJH60F4DPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% Symbol VCES VGES IC Note1 IC Note1 ic(peak) Note1 iDF(peak) Note2 PC θj-c Tj Tstg Ratings 600 ±30 60 30 120 100 235.8 0.53 150 –55 to +150 Unit V V A A A A W °C/W °C °C REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 1 of 6 RJH60F4DPK Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 VECF2 trr Min ⎯ ⎯ 4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ 1.4 1.7 1945 93 33 30 32 65 80 1.6 1.8 140 Max 100 ±1 8 1.82 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.1 ⎯ ⎯ Unit μA μA V V V pF pF pF ns ns ns ns V V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 30 A, VGE = 15V Note3 IC = 60 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300V VGE = 15V Note3 Rg = 5 Ω IF = 20 A Note3 IF = 40 A Note3 IF = 20 A diF/dt = 100 A/μs C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 2 of 6 RJH60F4DPK Preliminary Main Characteristics Maximum Safe Operation Area 1000 120 Typical Output Characteristics Ta = 25°C Pulse Test 12 V 15 V 11 V 10 V Collector Current IC (A) Collector Current IC (A) 100 10 PW 100 80 60 μs 9.5 V 10 = 10 0 μs 1 9V 40 20 0 8.5 V 0.1 Ta = 25°C 1 shot pulse 1 10 100 1000 VGE = 8 V 0 1 2 3 4 5 0.01 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage VCE(sat) (V) 120 VCE = 10 V Pulse Test Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 3.0 Ta = 25°C Pulse Test 2.4 30 A 60 A Collector Current IC (A) 100 80 60 40 1.8 Tc = 75°C 1.2 IC = 15 A 25°C 20 0 0 –25°C 2 4 6 8 10 0.6 0 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) 2.4 2.0 1.6 1.2 0.8 0.4 0 −25 VGE = 15 V Pulse Test IC = 60 A 30 A 15 A Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temperature (Typical) 8 7 6 5 4 3 2 1 0 -25 0 25 50 75 100 125 150 IC = 10 mA VCE = 10 V Gate to Emitter Cutoff Voltage VGE(off) (V) 1 mA 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Junction Temperature Tj (°C) REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 3 of 6 RJH60F4DPK Collector to Emitter Diode Forward Voltage vs. Diode Forward Current Characteristics (Typical) 100 10000 VGE = 0 V Pulse Test Preliminary Typical Capacitance vs. Colloctor to Emitter Voltage Diode Forward Current IF (A) Cies Capacitance C (pF) 80 1000 60 100 Coes 10 VGE = 0 V f = 1 MHz Ta = 25°C 0 50 100 150 200 250 300 Cres 40 20 0 0 1 2 3 4 5 1 Collector to Emitter Diode Forward Voltage VECF (V) Dynamic Input Characteristics (Typical) Colloctor to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) 800 VGE VCE VCE = 600 V 300 V 16 Colloctor to Emitter Voltage VCE (V) Switching Characteristics (Typical) (1) 1000 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C 100 tf td(off) td(on) 10 tr 600 12 400 8 200 VCE = 600 V 300 V 0 0 20 40 60 4 IC = 30 A 80 Switching Time t (ns) 0 100 1 1 10 100 1000 Gate Charge Qg (nC) Colloctor Current IC (A) Switching Characteristics (Typical) (2) 1000 IC = 30 A, RL = 10 Ω VGE = 15 A, Ta = 25°C Switching Characteristics (Typical) (3) 1000 IC = 30 A, VGE = 15 A RL = 10 Ω, Rg = 5 Ω Switching Time t (ns) Switching Time t (ns) 100 tf td(off) td(on) 100 tf tr td(off) td(on) tr 10 1 10 100 10 0 20 40 60 80 100 120 140 Gate Resistance Rg (Ω) Case Temperature Tc (°C) REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 4 of 6 RJH60F4DPK Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) Preliminary Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.05 θj − c(t) = γs (t) • θj − c θj − c = 0.53 °C/W, Tc = 25 °C PDM PW T D= PW T 0.1 1 shot pulse 0.02 0.01 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 2 0.0 0.01 1 shot pulse θj – c(t) = γs (t) • θj – c θj – c = 2°C/W, Tc = 25°C PDM PW T 1m 10 m 100 m 1 10 D= PW T 0.01 10 μ 100 μ Pulse Width Switching Time Test Circuit Ic Monitor RL Vin Monitor PW (s) Waveform 90% Vin 10% 90% 90% Rg Vin = 15 V D.U.T. VCC Ic td(on) ton 10% tr 10% td(off) toff tf REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 5 of 6 RJH60F4DPK Preliminary Package Dimensions Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 1.5 15.6 ± 0.3 4.8 ± 0.2 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part No. RJH60F4DPK-00-T0 Quantity 360 pcs Shipping Container Box (Tube) REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 6 of 6 0.3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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