RJH60F6DPQ-A0

Preliminary Datasheet RJH60F6DPQ-A0 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load) R07DS0327EJ0100 Rev.1.00 Apr 06, 2011 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 12 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC θj-c θj-cd Tj Tstg Ratings 600 ±30 85 45 170 100 297.6 0.42 2.0 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C R07DS0327EJ0100 Rev.1.00 Apr 06, 2011 Page 1 of 7 RJH60F6DPQ-A0 Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tf td(off) tf VECF1 VECF2 trr Min ⎯ ⎯ 4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ 1.35 3800 150 65 58 80 131 74 1.2 1.5 90 Max 100 ±1 8 1.75 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.1 ⎯ ⎯ Unit μA μA V V pF pF pF ns ns ns ns V V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 45 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5 Ω Note3, Inductive load IF = 20 A IF = 40 A Note3 Note3 C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test IF = 20 A diF/dt = 100 A/μs R07DS0327EJ0100 Rev.1.00 Apr 06, 2011 Page 2 of 7 RJH60F6DPQ-A0 Preliminary Main Characteristics Maximum Safe Operation Area 1000 180 Typical Output Characteristics Ta = 25°C 160 Pulse Test 140 120 100 80 60 40 20 0 VGE = 8 V 0 1 2 3 4 5 10 V 11 V 15 V 9.6 V 9.8 V 9.4 V 9.2 V 9V 8.8 V 8.6 V 8.4 V 8.2 V Collector Current IC (A) 100 PW 10 μs 10 1 Tc = 25°C Single pulse 10 100 1000 0.1 1 Collector Current IC (A) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 180 Pulse TestV VCE = 10 Ta = 25°C Pulse Test μ 00 =1 s Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 3.0 Ta = 25°C Pulse Test Collector Current IC (A) 160 140 120 100 80 60 40 20 0 0 2.6 2.2 IC = 30 A 45 A 85 A Tc = 75°C 25°C –25°C 1.8 1.4 1.0 6 8 10 12 14 16 18 20 2 4 6 8 10 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) 2.0 VGE = 15 V Pulse Test IC = 85 A Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 8 1.8 Gate to Emitter Cutoff Voltage VGE(off) (V) 7 IC = 10 mA 6 1.6 45 A 1.4 30 A 1.2 15 A 5 VCE = 10 V Pulse Test 4 −25 0 25 1 mA 1.0 −25 0 25 50 75 100 125 150 50 75 100 125 150 Junction Temparature Tj (°C) Junction Temparature Tj (°C) R07DS0327EJ0100 Rev.1.00 Apr 06, 2011 Page 3 of 7 RJH60F6DPQ-A0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage 10000 Cies Forward Current vs. Forward Voltage (Typical) 100 Diode Forward Current IF (A) Capacitance C (pF) 80 1000 60 100 Coes 40 VGE = 0 V Ta = 25°C Pulse Test 0 1 2 3 4 20 0 10 VGE = 0 V f = 1 MHz Ta = 25°C 0 50 100 150 200 Cres 1 250 300 C-E Diode Forward Voltage VCEF (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Collector to Emitter Voltage VCE (V) IC = 25 A Ta = 25°C VCC = 600 V 300 V 600 VCE 12 400 8 200 VCC = 600 V 300 V 0 0 40 80 120 4 0 160 Gate Charge Qg (nc) R07DS0327EJ0100 Rev.1.00 Apr 06, 2011 Gate to Emitter Voltage VGE (V) 800 VGE 16 Page 4 of 7 RJH60F6DPQ-A0 Switching Characteristics (Typical) (1) 1000 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C tr includes the diode recovery tf td(off) tr td(on) Preliminary Switching Characteristics (Typical) (2) 100000 Swithing Energy Losses E (μJ) Switching Times t (ns) 10000 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C Eon includes the diode recovery 100 1000 Eoff 100 Eon 10 1 10 100 200 10 1 10 100 200 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (3) 240 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (4) 1600 Switching Times t (ns) 200 160 120 80 40 0 0 Swithing Energy Losses E (μJ) VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω tr includes the diode recovery td(off) 1200 Eoff 800 Eon 400 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω Eon includes the diode recovery 0 25 50 75 100 125 150 tr tf td(on) 0 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) Junction Temperature Tj (°C) (Inductive load) R07DS0327EJ0100 Rev.1.00 Apr 06, 2011 Page 5 of 7 RJH60F6DPQ-A0 Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C Preliminary 1 D=1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse θj – c(t) = γs (t) • θj – c θj – c = 0.42°C/W, Tc = 25°C PDM PW T 1m 10 m 100 m 1 10 D= PW T 0.1 0.01 10 μ 100 μ Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 2°C/W, Tc = 25°C PDM 0.01 0.1 0.05 0.0 2 D= PW T PW T 1 shot pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width Switching Time Test Circuit PW (s) Waveform 90% Diode clamp L VGE 10% 90% 90% IC D.U.T Rg VCE VCC 10% td(on) ton tr 10% 1% td(off) tf ttail toff 10% R07DS0327EJ0100 Rev.1.00 Apr 06, 2011 Page 6 of 7 RJH60F6DPQ-A0 Preliminary Package Dimensions Package Name TO-247A JEITA Package Code ⎯ RENESAS Code PRSS0003ZH-A Previous Code ⎯ MASS[Typ.] 6.14g Unit: mm 21.13 ± 0.33 6.15 15.94 ± 0.19 5.02 ± 0.19 φ3.60 ± 0.1 20.19 ± 0.38 4.5 max 0.1 2.10 + 0.2 – 13.26 1.27 ± 0.13 5.45 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH60F6DPQ-A0-T0 Quantity 240 pcs Shipping Container Box (Tube) R07DS0327EJ0100 Rev.1.00 Apr 06, 2011 17.63 Page 7 of 7 Notice 1. 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