RJH60F7ADPK

Preliminary RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC θj-c θj-c Tj Tstg Ratings 600 ±30 90 50 180 100 328.9 0.38 2.0 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 1 of 6 RJH60F7ADPK Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 trr Min ⎯ ⎯ 4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ 1.6 4890 198 83 48 36 122 95 1.6 140 Max 100 ±1 8 1.75 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.1 ⎯ Unit μA μA V V V pF pF ns ns ns ns V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 50 A, VGE = 15V Note3 IC = 90 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300 V VGE = 15 V Note3 Rg = 5 Ω IF = 20 A Note3 C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test IF = 20 A diF/dt = 100 A/μs REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 2 of 6 RJH60F7ADPK Preliminary Main Characteristics Maximum Safe Operation Area 1000 160 Typical Output Characteristics Pulse Test Ta = 25°C 8.6 V 10 V 120 15 V 7.6 V 9V 8V 8.4 V Collector Current IC (A) 100 10 PW = 10 μs 10 Collector Current IC (A) 0μ s 80 1 Tc = 25°C Single pulse 10 100 1000 40 VGE = 7 V 0 0 1 2 3 4 5 0.1 1 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage VCE(sat) (V) Pulse TestV VCE = 10 Ta = 25°C Pulse Test Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 3.0 2.5 2.0 1.5 1.0 IC = 20 A 0.5 0 0 4 8 12 16 20 50 A 90 A Pulse Test Ta = 25°C 160 Collector Current IC (A) 120 80 Tc = 75°C 40 25°C 0 0 2 4 6 8 10 –25°C Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) 2.0 IC = 90 A 1.6 50 A 20 A Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 7 6 5 4 1 mA 3 2 1 0 −25 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 IC = 10 mA 1.2 0.8 0.4 0 −25 VGE = 15 V Pulse Test 0 25 50 75 100 125 150 Gate to Emitter Cutoff Voltage VGE(off) (V) Junction Temparature Tj (°C) Junction Temparature Tj (°C) REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 3 of 6 RJH60F7ADPK Preliminary Typical Capacitance vs. Collector to Emitter Voltage (Typical) 10000 VGE = 0 V Pulse Test Ta = 25°C Cies Forward Current vs. Forward Voltage (Typical) 100 Forward Current IF (A) Capacitance C (pF) 80 1000 60 40 100 VGE = 0 V f = 1 MHz Ta = 25°C 0 50 100 150 200 Coes Cres 20 0 0 1 2 3 4 5 10 250 300 C-E Diode Forward Voltage VCEF (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) 800 IC = 50 A Ta = 25°C VCE VGE 16 1000 Switching Characteristics (Typical) (1) VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C td(off) 100 td(on) tf 600 12 VCE = 600 V 300 V 400 8 Switching Time t (ns) 10 tr 200 VCE = 600 V 300 V 0 0 40 80 120 160 4 0 200 1 1 10 100 1000 Gate Charge Qg (nc) Collector Current IC (A) Switching Characteristics (Typical) (2) 10000 IC = 50 A, RL = 6 Ω VGE = 15 V, Ta = 25°C Switching Characteristics (Typical) (3) 1000 IC = 50 A, RL = 6 Ω VGE = 15 V Switching Time t (ns) 1000 Switching Time t (ns) td(off) 100 tr tf 100 td(off) td(on) td(on) 10 1 tr tf 10 10 100 0 20 40 60 80 100 120 140 Gate Resistance Rg (Ω) Case Temperature Tc (°C) REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 4 of 6 RJH60F7ADPK Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) Preliminary Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 0.38°C/W, Tc = 25°C PDM 0.01 0.1 0.05 0.0 2 D= PW T PW T 1 shot pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 2 0.0 0.01 1 shot pulse θj – c(t) = γs (t) • θj – c θj – c = 2°C/W, Tc = 25°C PDM PW T 1m 10 m 100 m 1 10 D= PW T 0.01 10 μ 100 μ Pulse Width Switching Time Test Circuit Ic Monitor RL Vin Monitor PW (s) Waveform 90% Vin 10% 90% 90% Rg Vin = 15 V D.U.T. VCC Ic td(on) ton 10% tr 10% td(off) toff tf REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 5 of 6 RJH60F7ADPK Preliminary Package Dimensions Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 1.5 15.6 ± 0.3 4.8 ± 0.2 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part No. RJH60F7ADPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 6 of 6 0.3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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