RJH60M1DPP-M0#T2

Preliminary Datasheet RJH1CV7DPQ-E0 1200V - 35A - IGBT Application: Inverter R07DS0525EJ0800 Rev.8.00 Nov 05, 2014 Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C) • Built-in fast recovery diode (trr = 200 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 280 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 Ω, Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC ic(peak) Note1 IDF iDF(peak) Note1 PC Note2 θj-c Note2 θj-cd Note2 Tj Tstg Ratings 1200 ±30 70 35 105 35 105 320 0.39 0.69 150 –55 to +150 Unit V V A A A A A W °C/W °C/W °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C R07DS0525EJ0800 Rev.8.00 Nov 05, 2014 Page 1 of 9 RJH1CV7DPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time FRD forward voltage FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current Symbol ICES /IR Min — Typ — Max 100 Unit μA IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon — 4.5 — — — — — — — — — — — — — — — 1.8 2.5 2150 100 55 166 20 95 53 45 185 280 3.2 ±1 6.5 2.3 — — — — — — — — — — — — μA V V V pF pF pF nC nC nC ns ns ns ns mJ Eoff Etotal tsc — — — 2.5 5.7 5 — — — mJ mJ μs VF trr Qrr Irr — — — — 2.1 200 0.7 9.6 — — — — V ns μC A Test Conditions VCE = 1200 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 35 A, VGE = 15 V Note3 IC = 70 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 35 A VCC = 600 V VGE = 15 V IC = 35 A Rg = 5 Ω Inductive load VCC ≤ 720 V, VGE = 15 V Tc ≤ 125°C IF = 35 A Note3 IF = 35 A diF/dt = 100 A/μs Notes: 3. Pulse test. R07DS0525EJ0800 Rev.8.00 Nov 05, 2014 Page 2 of 9 RJH1CV7DPQ-E0 Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 80 Collector Current IC (A) Collector Dissipation Pc (W) 400 300 200 100 0 25 50 75 20 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 120 PW 100 10 0 10 µs = 10 Collector Current IC (A) 1000 µs 1 0.1 0.01 1 Tc = 25°C Single pulse 100 80 60 40 20 0 10 1000 100 0 10000 400 800 1200 1600 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics Tc = 25°C Pulse Test 100 Tc = 150°C Pulse Test 100 15 V 12 V Collector Current IC (A) Collector Current IC (A) 40 0 0 Collector Current IC (A) 60 80 60 10 V 40 20 15 V 80 12 V 60 10 V 40 20 VGE = 8 V VGE = 8 V 0 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS0525EJ0800 Rev.8.00 Nov 05, 2014 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 9 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 5 4 3 IC = 70 A 2 35 A Tc = 25°C Pulse Test 1 8 10 12 14 16 18 20 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 5 4 IC = 70 A 3 35 A 2 Tc = 150°C Pulse Test 1 8 14 16 18 20 Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) Tc= 25°C 150°C 60 40 20 VCE = 10 V Pulse Test 0 0 4 8 12 16 20 4.0 VGE = 15 V Pulse Test 3.5 IC = 70 A 3.0 2.5 35 A 2.0 1.5 1.0 −25 0 25 50 75 100 125 150 Case Temparature Tc (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) Frequency Characteristics (Typical) 10 30 8 IC = 10 mA 6 1 mA 4 2 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 Case Temparature Tc (°C) R07DS0525EJ0800 Rev.8.00 Nov 05, 2014 Collector Current IC(RMS) (A) Gate to Emitter Cutoff Voltage VGE(off) (V) 12 Gate to Emitter Voltage VGE (V) 80 0 −25 10 Gate to Emitter Voltage VGE (V) 100 Collector Current IC (A) Collector to Emitter Satularion Voltage VCE(sat) (V) Preliminary Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Satularion Voltage VCE(sat) (V) RJH1CV7DPQ-E0 25 0 Collector current wave (Square wave) 20 15 Tj = 125°C Tc = 90°C VCE = 400 V VGE = 15 V Rg = 5 Ω duty = 50% 10 5 0 1 10 100 1000 Frequency f (kHz) Page 4 of 9 RJH1CV7DPQ-E0 Preliminary Switching Characteristics (Typical) (1) Swithing Energy Losses E (mJ) 1000 Switching Times t (ns) tf td(off) 100 td(on) tr 10 VCC = 600 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 1 Switching Characteristics (Typical) (2) 100 VCC = 600 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 Eon Eoff 1 0.1 10 100 1 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 10 Swithing Energy Losses E (mJ) 1000 Switching Times t (ns) 100 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) tf td(off) 100 tr td(on) VCC = 600 V, VGE = 15 V IC = 35 A, Tc = 150°C 10 1 Eon Eoff 1 VCC = 600 V, VGE = 15 V IC = 35 A, Tc = 150°C 0.1 10 100 1 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 10 Swithing Energy Losses E (mJ) 1000 tf td(off) 100 td(on) tr 10 25 10 Gate Registance Rg (Ω) (Inductive load) Gate Registance Rg (Ω) (Inductive load) Switching Times t (ns) 10 VCC = 600 V, VGE = 15 V IC = 35 A, Rg = 5 Ω 50 75 100 125 Case Temperature Tc (°C) (Inductive load) R07DS0525EJ0800 Rev.8.00 Nov 05, 2014 150 Eon Eoff 1 0.1 25 VCC = 600 V, VGE = 15 V IC = 35 A, Rg = 5 Ω 50 75 100 125 150 Case Temperature Tc (°C) (Inductive load) Page 5 of 9 RJH1CV7DPQ-E0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Capacitance C (pF) Cies 1000 100 Coes Cres 10 VGE = 0 V f = 1 MHz Tc = 25°C 1 0 40 80 120 160 200 800 12 400 8 200 4 VCE 0 0 Reverse Recovery Charge Qrr (µC) Reverse Recovery Time trr (ns) IF = 35 A 500 400 Tc = 150°C 25°C 100 0 40 80 120 160 120 160 0 200 3.0 IF = 35 A 2.5 Tc = 150°C 2.0 1.5 1.0 0.5 25°C 0 200 0 40 80 120 160 200 Diode Current Slope diF/dt (A/µs) Diode Current Slope diF/dt (A/µs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 30 IF = 35 A VCE = 0 V Pulse Test 100 25 Forward Current IF (A) Reverse Recovery Current Irr (A) 80 Reverse Recovery Charge vs. Diode Current Slope (Typical) 600 0 40 Gate Charge Qg (nc) Reverse Recovery Time vs. Diode Current Slope (Typical) 200 VGE 600 Collector to Emitter Voltage VCE (V) 300 16 IC = 35 A VCC = 300 V Tc = 25°C Gate to Emitter Voltage VGE (V) 10000 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 20 Tc = 150°C 15 10 25°C 5 0 80 Tc = 25°C 60 150°C 40 20 0 0 40 80 120 160 200 Diode Current Slope diF/dt (A/µs) R07DS0525EJ0800 Rev.8.00 Nov 05, 2014 0 1 2 3 4 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 Preliminary Normalized Transient Thermal Impedance γs (t) RJH1CV7DPQ-E0 Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 0.39°C/W, Tc = 25°C 0.1 0.1 0.05 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ 1m 10 m 100 m Pulse Width 1 100 10 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.1 θj – c(t) = γs (t) • θj – c θj – c = 0.69°C/W, Tc = 25°C 0.05 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ R07DS0525EJ0800 Rev.8.00 Nov 05, 2014 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Page 7 of 9 RJH1CV7DPQ-E0 Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) tf td(on) tr Waveform Diode Reverse Recovery Time Test Circuit VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0525EJ0800 Rev.8.00 Nov 05, 2014 0.5 Irr 0.9 Irr Page 8 of 9 RJH1CV7DPQ-E0 Preliminary Package Dimension JEITA Package Code ⎯ RENESAS Code PRSS0003ZE-A Previous Code ⎯ MASS[Typ.] 6.0g Unit: mm φ3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH1CV7DPQ-E0#T2 R07DS0525EJ0800 Rev.8.00 Nov 05, 2014 Quantity 450 pcs Shipping Container Tube Page 9 of 9 Notice 1. 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