RJH65D27BDPQ-A0#T0

Preliminary Datasheet RJH65D27BDPQ-A0 650V - 50A - IGBT Application: Inverter R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 Features  Low collector to emitter saturation voltage VCE(sat) = 1.3 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 120 ns typ. (at CC = 400 V, VGE = ±15 V, IC = 50 A, Rg = 10 , inductive load)  Operation frequency (10kHz ≤ f ˂ 20kHz) Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Clamped inductive load current Tc = 25°C Tc = 100°C Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Collector to emitter diode forward current Symbol VCES / VR VGES IC IC ic(peak)Note1 ICLNote2 IDF IDF IDF(peak) Note1 PC Note3 θj-c Note3 θj-cd Note3 Tj Note3 Tstg Ratings 650 ±30 100 50 200 150 100 50 200 375 0.40 0.50 175 –55 to +150 Unit V V A A A A A A A W °C /W °C /W °C °C Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data. R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 Page 1 of 10 RJH65D27BDPQ-A0 Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol ICES / IR Min — Typ — Max 100 Unit A IGES VGE(off) VCE(sat) — 4.5 — — — 1.3 ±1 6.5 1.65 A V V VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 50 A, VGE = 15 V Note4 Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon — — — — — — — — — — — 2850 175 80 175 25 90 20 35 165 120 1.0 — — — — — — — — — — — pF pF pF nC nC nC ns ns ns ns mJ VCE = 25 V VGE = 0 f = 1 MHz Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal tsc — — — — — — — — — 3 1.5 2.5 20 35 200 140 1.5 1.9 3.4 — — — — — — — — — — — mJ mJ ns ns ns ns mJ mJ mJ s FRD forward voltage VF FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current trr Qrr Irr — — — — 1.7 80 0.35 7.5 2.2 — — — V ns μC A Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Test Conditions VCE = 650 V, VGE = 0 VGE = 15V VCE = 400 V IC = 50 A VCC = 400 V VGE = 15 V IC = 50 A Rg = 10  (Inductive load) Note5 VCC = 400 V VGE = 15 V IC = 50 A Rg = 10  TC = 150C (Inductive load) Note5 VCC  360 V, VGE = 15 V TC = 150C IF = 50 A Note4 IF = 50 A, diF/dt = 300 A/s Notes: 1. PW  10 s, duty cycle  1% 2. VGE = 15V 3. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C 4. Pulse test 5. Switching time test circuit and waveform are shown below. R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 Page 2 of 10 RJH65D27BDPQ-A0 Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 120 Collector Current IC (A) Collector Dissipation Pc (W) 400 300 200 100 0 25 50 75 60 40 20 0 100 125 150 175 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 180 1000 10 0μ =1 0μ s Collector Current IC (A) PW 100 s 10 1 0.1 0.01 1 Tc = 25°C Single pulse 150 120 90 60 30 0 10 100 1000 0 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 200 160 200 Pulse Test Tc = 25°C 13 V 15 V 12 V 120 11 V 80 10 V Collector Current IC (A) Collector Current IC (A) 80 0 0 Collector Current IC (A) 100 9V 40 Pulse Test Tc = 150°C 15 V 13 V 160 12 V 11 V 120 10 V 80 9V 40 VGE = 8 V VGE = 8 V 0 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 0 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Page 3 of 10 RJH65D27BDPQ-A0 Preliminary 5 Tc = 25°C Pulse Test 4 IC = 50 A 3 25 A 12.5 A 2 1 0 4 8 12 16 20 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 5 Tc = 150°C Pulse Test 4 IC = 50 A 3 25 A 12.5 A 2 1 0 4 Gate to Emitter Voltage VGE (V) 150°C 120 80 40 VCE = 10 V Pulse Test 4 8 12 16 20 Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) Tc = 25°C 0 VGE = 15 V Pulse Test 2.5 IC = 100 A 2.0 50 A 1.5 25 A 1.0 0.5 0 −25 0 50 75 150 10 8 IC = 10 mA 4 1.5 mA 2 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 Case Temparature Tc (°C) R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 100 125 150 Frequency Characteristics (Typical) Collector Current IC(max) (A) Gate to Emitter Cutoff Voltage VGE(off) (V) 25 Case Temparature Tc (°C) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) 6 20 3.0 Gate to Emitter Voltage VGE (V) 0 −25 16 Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) 200 0 12 Gate to Emitter Voltage VGE (V) Typical Transfer Characteristics 160 8 Tj = 175°C Tc = 90°C VCE = 400 V VGE = 15 V Rg = 10 Ω duty = 50% 120 90 60 Ic(max) 30 0 Collector current wave (Square wave) 0 1 10 100 Frequency f (kHz) Page 4 of 10 RJH65D27BDPQ-A0 Preliminary 1000 Switching Times t (ns) td(off) tf 100 td(on) 10 tr 1 1 VCC = 400 V, VGE = ±15 V Rg = 10 Ω, Tc = 150°C 10 100 Switching Characteristics (Typical) (2) Swithing Energy Losses E (mJ) Switching Characteristics (Typical) (1) 100 VCC = 400 V, VGE = ±15 V Rg = 10 Ω, Tc = 150°C Eon 10 Eoff 1 0.1 1000 1 Swithing Energy Losses E (mJ) Switching Times t (ns) 10 VCC = 400 V, VGE = ±15 V IC = 50 A, Tc = 150°C td(off) tf tr td(on) 10 Eoff 1 Eon VCC = 400 V, VGE = ±15 V IC = 50 A, Tc = 150°C 0.1 1 10 100 1 Swithing Energy Losses E (mJ) VCC = 400 V, VGE = ±15 V IC = 50 A, Rg = 10 Ω td(off) tf 100 tr td(on) 10 25 50 75 100 125 Case Temperature Tc (°C) (Inductive load) R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 1000 10 Gate Registance Rg (Ω) (Inductive load) Gate Registance Rg (Ω) (Inductive load) Switching Times t (ns) 1000 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 100 100 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) 1000 10 150 10 VCC = 400 V, VGE = ±15 V IC = 50 A, Rg = 10 Ω Eoff 1 0.1 25 Eon 50 75 100 125 150 Case Temperature Tc (°C) (Inductive load) Page 5 of 10 RJH65D27BDPQ-A0 Preliminary Reverse Recovery Time vs. Forward Current (Typical) Reverse Recovery Time vs. Diode Current Slope (Typical) 1000 Tc = 150°C 100 25°C Reverse Recovery Current Irr (A) 100 VCC = 400 V diF/dt = 300 A/us Tc = 150°C 100 25°C 10 10 1000 100 1000 Diode Current Slope diF/dt (A/μs) Forward Current IF (A) Reverse Recovery Charge vs. Diode Current Slope (Typical) Reverse Recovery Charge vs. Forward Current (Typical) 10 Reverse Recovery Charge Qrr (μC) Reverse Recovery Charge Qrr (μC) 10 10 Reverse Recovery Time trr (ns) VCC = 400 V IF = 50 A VCC = 400 V IF = 50 A Tc = 150°C 1 25°C 0.1 0.01 10 100 1000 10 VCC = 400 V diF/dt = 300 A/us Tc = 150°C 1 25°C 0.1 10 100 1000 Diode Current Slope diF/dt (A/μs) Forward Current IF (A) Reverse Recovery Current vs. Diode Current Slope (Typical) Reverse Recovery Current vs. Forward Current (Typical) 100 Reverse Recovery Current Irr (A) Reverse Recovery Time trr (ns) 1000 VCC = 400 V IF = 50 A 10 Tc = 150°C 25°C 1 10 100 1000 Diode Current Slope diF/dt (A/μs) R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 100 VCC = 400 V diF/dt = 300 A/us Tc = 150°C 10 25°C 1 10 100 1000 Forward Current IF (A) Page 6 of 10 RJH65D27BDPQ-A0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage 10000 Capacitance C (pF) Cies 1000 100 Coes Cres VGE = 0 V f = 1 MHz Tc = 25°C 10 0 50 100 150 200 250 300 Collector to Emitter Voltage VCE (V) 800 16 VCC = 400 V IC = 50 A Tc = 25°C 600 VGE 12 400 8 200 4 VCE 0 0 40 80 120 160 0 200 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Gate Charge Qg (nC) Forward Current vs. Forward Voltage (Typical) Forward Current IF (A) 200 Tc = 25°C 160 150°C 120 80 40 VCE = 0 V Pulse Test 0 0 1 2 3 4 C-E Diode Forward Voltage VCEF (V) R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 Page 7 of 10 Normalized Transient Thermal Impedance γs (t) RJH65D27BDPQ-A0 Preliminary Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C D=1 1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 0.40°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 PDM D= PW T 0.02 0.01 1 shot pulse 0.01 10 μ 100 μ PW T 1m 10 m Pulse Width 100 m 1 10 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C D=1 1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 0.50°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 D= 100 μ PW T PW T 0.02 0.01 1 shot pulse 0.01 10 μ R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 PDM 1m 10 m Pulse Width 100 m 1 10 PW (s) Page 8 of 10 RJH65D27BDPQ-A0 Preliminary Switching Time Test Circuit Waveform VGE 90% Diode clamp 10% L IC 90% D.U.T 90% VCC Rg 10% td(off) Diode Reverse Recovery Time Test Circuit 10% tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 0.5 Irr 0.9 Irr Page 9 of 10 RJH65D27BDPQ-A0 Preliminary Package Dimension JEITA Package Code  RENESAS Code PRSS0003ZH-A Previous Code  MASS[Typ.] 6.14g Unit: mm 3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247A 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part No. RJH65D27BDPQ-A0#T2 R07DS1328EJ0110 Rev.1.10 Mar 01, 2016 Quantity 240 pcs Shipping Container 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