RJH65T46DPQ-A0#T0

Preliminary Datasheet RJH65T46DPQ-A0 R07DS1259EJ0100 Rev.1.00 May 18, 2015 650V - 40A - IGBT Application: Power Factor Correction circuit Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology (G7H series)  High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 40 A, Rg = 10 , Ta = 25°CInductive load)  Operation frequency (20kHz ≤ f ˂ 100kHz)  Not guarantee short circuit withstand time Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Symbol VCES / VR VGES IC IC iC(peak) Note1 Ratings 650 30 80 40 300 Unit V V A A A Collector to emitter diode Forward current IDF IDF iDF(peak) Note1 PC j-c j-cd Tj Note2 Tstg 30 15 100 340.9 0.44 1.33 175 –55 to +150 A A A W °C/W °C/ W °C °C Tc = 25 °C Tc = 100 °C Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C. Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C. R07DS1259EJ0100 Rev.1.00 May 18, 2015 Page 1 of 9 RJH65T46DPQ-A0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on loss energy Turn-off loss energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on loss energy Turn-off loss energy Total switching energy FRD forward voltage FRD reverse recovery time Symbol ICES / IR Min  Typ  Max 100 Unit A Test Conditions VCE = 650 V, VGE = 0 IGES VGE(off) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon Eoff  4.0  — — — — — —  — — — — —   1.8 3000 92 55 138 22 57 45 30 170 45 0.45 0.55 ±1 7.0 2.4 — — — — — —  — — — — — A V V pF pF pF nC nC nC ns ns ns ns mJ mJ VGE = 15 V VCE = 400 V IC = 40 A Etotal td(on) tr td(off) tf Eon Eoff Etotal — — — — — — — — 1.00 45 30 185 50 0.57 0.63 1.20 — — — — — — — — mJ ns ns ns ns mJ mJ mJ VCC = 400 V VGE = 15 V IC = 40 A Rg = 10  TC = 150 °C Inductive load VF trr — — 1.7 100 2.2 — V ns IF = 15 A Note3 IF = 15 A, diF/dt = 300 A/s VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1.33 mA IC = 40 A, VGE = 15V Note3 VCE = 25 V VGE = 0 f = 1 MHz VCC = 400 V VGE = 15 V IC = 40 A Rg = 10  TC = 25 °C Inductive load Note4 Note4 Notes: 3. Pulse test 4. Switching time test circuit and waveform are shown below. R07DS1259EJ0100 Rev.1.00 May 18, 2015 Page 2 of 9 RJH65T46DPQ-A0 Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 120 Collector Current IC (A) Collector Dissipation Pc (W) 400 300 200 100 80 60 40 20 0 0 0 25 50 75 0 100 125 150 175 50 75 100 125 150 175 Case Temperature Tc (°C) Maximum Safe Operation Area Typical Transfer Characteristics 160 10 0 = 10 Collector Current IC (A) PW 100 μs μs 10 1 0.1 1 Tc = 25°C Single pulse VCE = 10 V Pulse Test 120 80 0 10 100 1000 Tc = 25°C 40 150°C 0 Collector to Emitter Voltage VCE (V) 160 Pulse Test 2 Tc = 25°C 120 8.5V 80 8.0V 40 VGE = 7.5 V 0 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) R07DS1259EJ0100 Rev.1.00 May 18, 2015 12 Pulse Test 2 Tc = 150°C 9.0V 10 V 15 V 8 16 Typical Output Characteristics Collector Current IC (A) 160 4 Gate to Emitter Voltage VGE (V) Typical Output Characteristics Collector Current IC (A) 25 Case Temperature Tc (°C) 1000 Collector Current IC (A) 100 9.0V 8.5V 10 V 15 V 120 8.0V 80 7.5V 40 VGE = 7.0 V 0 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Page 3 of 9 RJH65T46DPQ-A0 Preliminary Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Tc = 25°C Pulse Test 4 IC = 80 A 40 A 20 A 3 2 1 0 4 8 12 16 20 Collector to Emitter Saturation Voltage VCE(sat) (V) 5 5 IC = 80 A 40 A 20 A 4 Tc = 150°C Pulse Test 3 2 1 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) 10 8 IC = 10 mA 6 4 1.33 mA 2 VCE = 10 V Pulse Test 0 −25 0 25 50 75 100 125 150 Case Temparature Tc (°C) Collector to Emitter Saturation Voltage VCE(sat) (V) Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 4.0 3.5 VGE = 15 V Pulse Test 3.0 IC = 80 A 2.5 40 A 2.0 1.5 20 A 1.0 0.5 −25 0 25 50 75 100 125 150 Case Temparature Tc (°C) Frequency Characteristics (Typical) Collector Current Ic(max) (A) 120 100 80 Ic(max) 60 0 Collector current wave (Square wave) 40 20 0 Tj = 175°C, Tc = 90°C, VCE = 400 V VGE = 15 V, Rg = 10Ω , duty = 50% 1 10 100 Frequency f (kHz) R07DS1259EJ0100 Rev.1.00 May 18, 2015 Page 4 of 9 RJH65T46DPQ-A0 Preliminary Switching Characteristics (Typical) (1) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 VCC = 400 V, VGE = 15 V Rg = 10 Ω, Tc = 150°C td(off) 100 tf td(on) 10 10 tr 20 30 Switching Characteristics (Typical) (2) 50 70 10 VCC = 400 V, VGE = 15 V Rg = 10 Ω, Tc = 150°C 1 Eoff Eon 0.1 10 100 50 70 100 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 10 Swithing Energy Losses E (mJ) 10000 Switching Times t (ns) 30 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) VCC = 400 V, VGE = 15 V IC = 40 A, Tc = 150°C 1000 td(off) 100 td(on) tf tr VCC = 400 V, VGE = 15 V IC = 40 A, Tc = 150°C 1 Eoff Eon 0.1 10 1 10 100 1 VCC = 400 V, VGE = 15 V IC = 40 A, Rg = 10 Ω td(off) 100 tf td(on) tr 75 100 125 Case Temperature Tc (°C) (Inductive load) R07DS1259EJ0100 Rev.1.00 May 18, 2015 150 Swithing Energy Losses E (mJ) 1000 50 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 10 25 10 Gate Registance Rg (Ω) (Inductive load) Gate Registance Rg (Ω) (Inductive load) Switching Times t (ns) 20 10 VCC = 400 V, VGE = 15 V IC = 40 A, Rg = 10 Ω 1 Eoff Eon 0.1 25 50 75 100 125 150 Case Temperature Tc (°C) (Inductive load) Page 5 of 9 RJH65T46DPQ-A0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Cies 1000 100 Coes Cres 10 0 50 100 150 200 250 300 800 600 VGE 12 400 8 200 4 VCE 0 0 40 80 120 160 0 200 Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) Reverse Recovery Time vs. Forward Current (Typical) Forward Current vs. Forward Voltage (Typical) 1000 100 VCC = 300 V diF/dt = 300 A/us Forward Current IF (A) Reverse Recovery Time trr (ns) 16 VCC = 400 V IC = 40 A Tc = 25°C Gate to Emitter Voltage VGE (V) VGE = 0 V Tc = 25°C f = 1 MHz Collector to Emitter Voltage VCE (V) Capacitance C (pF) 10000 Dynamic Input Characteristics (Typical) Tc = 150°C 100 25°C 10 1 10 Forward Current IF (A) R07DS1259EJ0100 Rev.1.00 May 18, 2015 100 80 Tc = 25°C 60 150°C 40 20 VCE = 0 V Pulse Test 0 0 1 2 3 4 5 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 Normalized Transient Thermal Impedance γs (t) RJH65T46DPQ-A0 Preliminary Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 0.44°C/W, Tc = 25°C 0.1 0.1 0.05 0.0 PDM 2 D= PW T 0.01 0.01 10 μ 1 shot pulse 100 μ PW T 1m 10 m Pulse Width 100 m 1 10 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 1.33°C/W, Tc = 25°C 0.1 0.05 .02 0.1 0 PDM 0.01 1 shot pulse 0.01 10 μ R07DS1259EJ0100 Rev.1.00 May 18, 2015 100 μ D= PW T PW T 1m 10 m Pulse Width 100 m 1 10 PW (s) Page 7 of 9 RJH65T46DPQ-A0 Preliminary Waveform Switching Time Test Circuit VGE 90% 10% Diode clamp RJU6054TDPP L IC 90% D.U.T 90% VCC Rg 10% td(off) Diode Reverse Recovery Time Test Circuit 10% tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS1259EJ0100 Rev.1.00 May 18, 2015 0.5 Irr 0.9 Irr Page 8 of 9 RJH65T46DPQ-A0 Preliminary Package Dimensions JEITA Package Code  RENESAS Code PRSS0003ZH-A Previous Code  MASS[Typ.] 6.14g Unit: mm 3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247A 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH65T46DPQ-A0#T0 R07DS1259EJ0100 Rev.1.00 May 18, 2015 Quantity 240 pcs Shipping Container Box (Tube) Page 9 of 9 Notice 1. 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