Preliminary Datasheet
RJH65T47DPQ-A0
650V - 45A - IGBT
Application: Power Factor Correction circuit
R07DS1291EJ0101
Rev.1.01
Oct 22, 2015
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology (G7H series)
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 45 A, Rg = 10 , Ta = 25°CInductive load)
Operation frequency (20kHz ≤ f ˂ 100kHz)
Not guarantee short circuit withstand time
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1 2
E
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Symbol
VCES / VR
VGES
IC
IC
IC(peak) Note1
IDF
IDF
IDF(peak) Note1
PC Note 2
j-c
j-cd
Tj Note2
Tstg
Ratings
650
30
90
45
335
30
15
100
375
0.40
1.33
175
–55 to +150
Unit
V
V
A
A
A
A
A
A
W
°C/W
°C/ W
°C
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
Page 1 of 9
RJH65T47DPQ-A0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Total switching energy
FRD forward voltage
FRD reverse recovery time
Symbol
ICES / IR
Min
Typ
Max
100
Unit
A
Test Conditions
VCE = 650 V, VGE = 0
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
4.0
—
—
—
—
—
—
—
—
—
—
—
1.8
3000
100
60
127
23
57
45
33
190
45
0.52
0.56
±1
7.0
2.4
—
—
—
—
—
—
—
—
—
—
—
A
V
V
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
VGE = 15 V
VCE = 400 V
IC = 45 A
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
—
—
—
—
—
—
—
1.08
35
33
186
55
0.69
0.77
1.46
—
—
—
—
—
—
—
mJ
ns
ns
ns
ns
mJ
mJ
mJ
VCC = 400 V
VGE = 15 V
IC = 45 A
Rg = 10
Tc = 150 °C
Inductive load
VF
trr
—
—
1.7
100
2.2
—
V
ns
IF = 15 A Note3
IF = 15 A, diF/dt = 300 A/s
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1.5 mA
IC = 45 A, VGE = 15V Note3
VCE = 25 V
VGE = 0
f = 1 MHz
VCC = 400 V
VGE = 15 V
IC = 45 A
Rg = 10
Tc = 25 °C
Inductive load
Note4
Note4
Notes: 3. Pulse test
4. Switching time test circuit and waveform are shown below.
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
Page 2 of 9
RJH65T47DPQ-A0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
Maximum DC Collector Current vs.
Case Temperature
120
Collector Current IC (A)
Collector Dissipation Pc (W)
400
300
200
100
80
60
40
20
0
0
0
25
50
75
0
100 125 150 175
50
75
100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
Typical Transfer Characteristics
PW
100
10
0
=
10
Collector Current IC (A)
180
μs
μs
10
1
0.1
1
Tc = 25°C
Single pulse
VCE = 10 V
Pulse Test
150
120
90
60
Tc = 25°C
150°C
30
0
10
100
0
1000
Collector to Emitter Voltage VCE (V)
150
8.5 V
120
90
8.0 V
60
VGE = 7.5 V
30
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
12
180
Pulse Test
9.0 V Tc = 25°C
10 V
15 V
8
16
20
Typical Output Characteristics
Collector Current IC (A)
180
4
Gate to Emitter Voltage VGE (V)
Typical Output Characteristics
Collector Current IC (A)
25
Case Temperature Tc (°C)
1000
Collector Current IC (A)
100
10 V
15 V
150
9.0 V
Pulse Test
Tc = 150°C
8.5 V
120
8.0 V
90
7.5 V
60
VGE = 7.0 V
30
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Page 3 of 9
RJH65T47DPQ-A0
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Tc = 25°C
Pulse Test
4
IC = 90 A
45 A
20 A
3
2
1
0
4
8
12
16
20
Collector to Emitter Saturation Voltage
VCE(sat) (V)
5
5
IC = 90 A
45 A
20 A
4
Tc = 150°C
Pulse Test
3
2
1
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
10
8
IC = 10 mA
6
4
1.5 mA
2
VCE = 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
Case Temparature Tc (°C)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Gate to Emitter Cutoff Voltage VGE(off) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
4.0
3.5
VGE = 15 V
Pulse Test
IC = 90 A
3.0
2.5
45 A
2.0
1.5
20 A
1.0
0.5
−25
0
25
50
75
100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
Collector Current Ic(max) (A)
150
120
90
Ic(max)
60
0
Collector current wave
(Square wave)
30
Tj = 175°C, Tc = 90°C, VCE = 400 V
VGE = 15 V, Rg = 10Ω , duty = 50%
0
1
10
100
Frequency f (kHz)
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
Page 4 of 9
RJH65T47DPQ-A0
Preliminary
Switching Characteristics (Typical) (1)
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
Switching Characteristics (Typical) (2)
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, Tc = 150°C
td(off)
100
tf
td(on)
tr
10
10
10
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, Tc = 150°C
1
Eoff
Eon
0.1
10
100
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
Switching Characteristics (Typical) (3)
10
Swithing Energy Losses E (mJ)
Switching Times t (ns)
10000
VCC = 400 V, VGE = 15 V
IC = 45 A, Tc = 150°C
1000
td(off)
100
td(on)
tf
tr
VCC = 400 V, VGE = 15 V
IC = 45 A, Tc = 150°C
1
Eon
Eoff
0.1
10
1
10
100
1
1000
Swithing Energy Losses E (mJ)
VCC = 400 V, VGE = 15 V
IC = 45 A, Rg = 10 Ω
td(off)
100
tf
tr
td(on)
50
75
100
125
Case Temperature Tc (°C)
(Inductive load)
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
10
25
10
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Times t (ns)
100
150
1
Eoff
Eon
VCC = 400 V, VGE = 15 V
IC = 45 A, Rg = 10 Ω
0.1
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Page 5 of 9
RJH65T47DPQ-A0
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
1000
100
Coes
Cres
10
0
50
100
150
200
250
300
800
600
VGE
12
400
8
200
4
VCE
0
0
40
80
120
160
0
200
Gate Charge Qg (nC)
Collector to Emitter Voltage VCE (V)
Reverse Recovery Time vs.
Forward Current (Typical)
Forward Current vs. Forward Voltage (Typical)
1000
100
VCC = 300 V
diF/dt = 300 A/us
Forward Current IF (A)
Reverse Recovery Time trr (ns)
16
VCC = 400 V
IC = 45 A
Tc = 25°C
Gate to Emitter Voltage VGE (V)
VGE = 0 V Tc = 25°C
f = 1 MHz
Collector to Emitter Voltage VCE (V)
Capacitance C (pF)
10000
Dynamic Input Characteristics (Typical)
Tc = 150°C
100
25°C
10
80
Tc = 25°C
60
150°C
40
20
VCE = 0 V
Pulse Test
0
1
10
Forward Current IF (A)
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
100
0
1
2
3
4
5
C-E Diode Forward Voltage VCEF (V)
Page 6 of 9
Normalized Transient Thermal Impedance γs (t)
RJH65T47DPQ-A0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
1
D=1
0.5
θj – c(t) = γs (t) • θj – c
θj – c = 0.40°C/W, Tc = 25°C
0.2
0.1
0.1 0.05
0.0
PDM
2
D=
PW
T
0.01
0.01
10 μ
1 shot pulse
100 μ
PW
T
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
1
D=1
0.5
0.2
θj – c(t) = γs (t) • θj – c
θj – c = 1.33°C/W, Tc = 25°C
0.1
0.05
.02
0.1 0
PDM
0.01
1 shot pulse
0.01
10 μ
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
100 μ
D=
PW
T
PW
T
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Page 7 of 9
RJH65T47DPQ-A0
Preliminary
Switching Time Test Circuit
Waveform
VGE
90%
Diode clamp
10%
L
IC
90%
D.U.T
90%
VCC
Rg
10%
td(off)
Diode Reverse Recovery Time Test Circuit
10%
tf
td(on)
tr
Waveform
VCC
IF
D.U.T
IF
diF/dt
L
trr
0
Irr
Rg
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
0.5 Irr
0.9 Irr
Page 8 of 9
RJH65T47DPQ-A0
Preliminary
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0003ZH-A
Previous Code
MASS[Typ.]
6.14g
Unit: mm
3.60 ± 0.1
5.02 ± 0.19
15.94 ± 0.19
17.63
4.5 max
20.19 ± 0.38
21.13 ± 0.33
6.15
Package Name
TO-247A
5.45
0.1
2.10 +– 0.2
13.26
1.27 ± 0.13
5.45
0.71 ± 0.1
2.41
Ordering Information
Orderable Part Number
RJH65T47DPQ-A0#T0
R07DS1291EJ0101 Rev.1.01
Oct 22, 2015
Quantity
240 pcs
Shipping Container
Box (Tube)
Page 9 of 9
Notice
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