RJJ0101DPD

RJJ0101DPD P Channel Power MOS FET High Speed Switching REJ03G1580-0200 Preliminary Rev.2.00 Nov 11, 2007 Features • VDSS : –12 V • RDS(on) : 38 mΩ(TYP) • ID : –5 A Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 3 4 1. 2. 3. 4. Gate Drain Source Drain 12 3 1 2, 4 Application • Power management switching, etc. REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 1 of 6 RJJ0101DPD Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Pch Note1 θch-c Tch Tstg Ratings –12 ±8 –5 –20 15 8.33 150 –55 to +150 Unit V V A A W °C/W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-Drain diode forward voltage Notes: 2. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) Min. –12 ±8 — — –0.3 — — — — — — — — — — — Typ. — — — — — 38 48 60 1380 235 115 35 150 490 350 -0.8 Max. — — –1 ±10 –1.1 52 70 93 — — — — — — — –1.1 Unit V V µA µA V mΩ mΩ mΩ pF pF pF ns ns ns ns V Conditions ID = –10 mA, VGS = 0 V IG = ±100 µA, VGS = 0 V VDS = –12 V, VGS = 0 V VGS = ±6.4V, VDS = 0 V ID = –1 mA, VDS = –10 V ID = –1.5 A, VGS = –4.5 V Note2 ID = –1.5 A, VGS = –2.5 V Note2 ID = –1.5 A, VGS = –1.8 V Note2 VDS = –10 V VGS = 0 V f = 1 MHz VDD = –10 V ID = –1.5 A VGS = –4 V RGS = 4.7 Ω IS = –3 A, VGS = 0 V Ciss Coss Crss td(on) tr td(off) tf VDF REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 2 of 6 RJJ0101DPD Main Characteristics Power vs. Temperature Derating 20 –100 Maximum Safe Operation Area Ta = 25°C 1 shot Pulse 10 µs Channel Dissipation Pch (W) Drain Current ID (A) 16 –10 PW 0 10 µs 1 = 12 m s DC pe O 8 Operation in ra –1 this area is limited by RDS(on) n tio 4 0 50 100 150 200 –0.1 –0.1 –1 –10 –100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics –16 –10 V –4.5 V –3 V –2.5 V Typical Transfer Characteristics –16 VDS = –10 V Pulse Test –2.2 V Drain Current ID (A) –12 Drain Current ID (A) –2 V –12 –8 VGS = –1.8 V –8 –4 Pulse Test –4 75°C 25°C Tc = –25°C –1 –2 –3 –4 –5 0 –2 –4 –6 –8 –10 0 0 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Voltage VDS(on) (mV) Ta = 25°C Drain to Source On State Resistance RDS(on) (mΩ) –250 1000 Pulse Test Ta = 25°C –2.5 V 100 VGS = –1.8 V –200 –4.0 A –150 –100 –1.5 A –4.5 V 10 –50 –1.0 A 0 –2 –4 –6 –8 –10 1 –0.1 –1 –10 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 3 of 6 RJJ0101DPD Static Drain to Source on State Resistance vs. Temperature Drain to Source On State Resistance RDS(on) (mΩ) 120 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 100 Pulse Test 30 10 3 1 0.3 0.1 –0.1 –0.3 –1 VDS = –10 V –3 –10 25°C Pulse Test –4 A –1.8 V –1.5 A –1 A –1 A 100 80 Tc = –25°C 75°C 60 –2.5 V 40 20 –25 VGS = –4.5 V 0 25 50 –4 A –1.5 A ID = –4 A, –1.5 A, –1 A 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 Dynamic Input Characteristics Drain to Source Voltage VDS (V) 0 ID = –3 A 0 Ciss 1000 Coss 100 VDD = –10, –12 V –7 V –5 V –8 –5 V –7 V –10 V VDD = –12 V –16 0 10 –8 20 –4 Crss 10 0 –2 –4 –6 –8 –10 –12 Drain to Source Voltage VDS (V) Gate Charge Qg (nc) Switching Characteristics 1000 td(off) tf tr 100 td(on) Reverse Drain Current vs. Source to Drain Voltage –16 Reverse Drain Current IDR (A) VGS = –4.5 V, VDD = –10 V Pulse Test Switching Time t (ns) –12 –5 V –8 VGS = 0, 5 V –4 Ta = 25°C 0 –0.4 –0.8 –1.2 –1.6 –2.0 10 –0.1 –1 –10 –100 Drain Current ID (A) Source to Drain Voltage VSDF (V) REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 4 of 6 Gate to Source Voltage VGS (V) VGS = 0 f = 1 MHz Capacitance C (pF) RJJ0101DPD Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance θch-c (°C/W) 100 10 1shot pulse 1 0.1 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = –10 V Vout td(on) Vout Monitor Vin Switching Time Waveform 10% 90% 90% 10% tr td(off) 90% 10% tf Vin –4 V 50 Ω REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 5 of 6 RJJ0101DPD Package Dimensions Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Previous Code  MASS[Typ.] 0.32g Unit: mm 1 ± 0.2 6.6 5.3 ± 0.2 2.3 0.5 ± 0.2 6.1 ± 0.2 10.4Max 0.1 ± 0.1 1Max 2.5Min 0.76 ± 0.2 0.76 0.5 ± 0.2 2.3 ± 0.2 2.3 Ordering Information Part No. RJJ0101DPD-00-J2 Quantity 3000 pcs Taping Shipping Container REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 6 of 6 1 1.4 ± 0.2 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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