RJJ0601JPN

RJJ0601JPN Silicon P Channel MOS FET High Speed Power Switching REJ03G1602-0100 Rev.1.00 Nov 21, 2007 Features • Low on-resistance RDS(on) = 8.2 mΩ typ. • Capable of 4.5 V gate drive • High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 2 1 G 1. Gate 2. Drain (Flange) 3. Source 3 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAPNote EARNote3 PchNote Tch Tstg 2 3 Value –60 ±20 –90 –360 –90 –40 137 90 150 –55 to +150 Unit V V A A A A mJ W °C °C REJ03G1602-0100 Page 1 of 6 Rev.1.00 Nov 21, 2007 RJJ0601JPN Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min –60 ±20 — — –1.0 — — — — — — — — — — — — — — Typ — — — — — 8.2 10 8800 950 600 150 25 23 25 30 290 135 –0.96 45 Max — — –10 ±10 –2.5 10 15 — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16 V, VDS = 0 VDS = –10 V, ID = –1 mANote4 ID = –45 A, VGS= –10 VNote4 ID = –45 A, VGS = –4.5 VNote4 VDS = –10 V, VGS = 0 f = 1 MHz VDD = –25 V, VGS = –10 V, ID = –90 A VGS = –10 V, ID= –45 A, VDD = –30 V, RG = 4.7 Ω IF = –90 A, VGS = 0 IF = –90 A, VGS = 0, diF/dt = 100 A/µs REJ03G1602-0100 Page 2 of 6 Rev.1.00 Nov 21, 2007 RJJ0601JPN Main Characteristics Power vs. Temperature Derating 100 −1000 −100 PW 10 Maximum Safe Operation Area 10 µs Pch (W) Drain Current ID (A) 80 0 µs 1 s m Channel Dissipation 60 −10 −1 −0.1 −0.01 −0.1 Ta = 25°C 1 shot Pulse DC e Op ra = 10 m 1s s( n tio 40 Operation in this area is limited by RDS (on) ho t) ≤1 0 (P W 20 s) 0 25 50 75 100 125 150 −1 −10 −100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics −100 −4.5 V −10 V Typical Transfer Characteristics −1000 VDS = −10 V Pulse Test −3.0 V −100 Drain Current ID (A) Drain Current ID (A) −10 −1 −0.1 −0.01 Tc = 150°C 25°C −40°C −50 VGS = −2.7 V −0.001 Pulse Test 0 −5 −10 −0.0001 0 −1 −2 −3 −4 −5 Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source on State Resistance RDS (on) (mΩ) 100 Pulse Test 25 ID = −45 A 20 10 VGS = −4.5 V −10 V 15 VGS = −4.5 V 10 5 0 −50 −10 V Pulse Test −25 0 25 50 75 100 125 150 1 −1 −10 −100 −1000 Drain Current ID (A) Case Temperature Tc (°C) REJ03G1602-0100 Page 3 of 6 Rev.1.00 Nov 21, 2007 RJJ0601JPN Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics Drain to Source Voltage VDS (V) VGS = 0 f = 1 MHz Capacitance C (pF) –4 VDD = –5 V –10 V –25 V –10 10000 Ciss –8 VDS VDD = –25 V –10 V –5 V VGS –20 1000 Coss Crss –12 –30 100 −0 −10 −20 −30 −40 −50 –16 0 ID = –90 A 50 100 150 –40 200 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) –100 Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating 250 200 150 100 50 0 25 L = 100 µH VDD = –25 V duty < 0.1 % Rg ≥ 50 Ω Reverse Drain Current IDR (A) Pulse Test –10 V –50 VGS = 0 V 0 –0.4 –0.8 –1.2 –1.6 –2.0 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Avalanche Test Circuit VDS Monitor L EAR = Avalanche Waveform 1 2 VDSS VDSS – VDD L • IAP2 • IAP Monitor Rg V(BR)DSS D. U. T VDD IAP VDS Vin –15 V 50 Ω ID 0 VDD REJ03G1602-0100 Page 4 of 6 Rev.1.00 Nov 21, 2007 Gate to Source Voltage VGS (V) 100000 0 0 RJJ0601JPN Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 θch - c(t) = γs (t) x θch - c θch - c = 1.39°C/W, Tc = 25°C PDM 0.01 0.01 t ho pu lse D= PW T PW T 1s 0.001 0.01 0.1 1 10 100 1000 Pulse Width PW (mS) Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDD = –30 V Vout td(on) Vout Monitor Vin Switching Time Waveform 10% 90% Vin –10 V 90% 90% 10% 10% td(off) tf tr REJ03G1602-0100 Page 5 of 6 Rev.1.00 Nov 21, 2007 RJJ0601JPN Package Dimensions Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 +0.2 –0.1 +0.1 –0.08 4.44 ± 0.2 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 1.5 Max 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part No. RJJ0601JPN-00-02 Quantity 500 pcs Box (Sack) Shipping Container REJ03G1602-0100 Page 6 of 6 Rev.1.00 Nov 21, 2007 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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