RJK0303DPB-00-J0

RJK0303DPB Silicon N Channel Power MOS FET Power Switching REJ03G1341-0600 Rev.6.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Note1 Ratings 30 +16/-12 40 160 40 17 28 55 2.27 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C Rev.6.00 Apr 19, 2006 page 1 of 6 RJK0303DPB Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 3.1 4.3 80 3300 1150 190 0.7 23 9.0 5.2 10.5 3.5 46 4.5 0.84 35 Max — ± 0.1 1 2.5 3.7 5.6 — — — — — — — — — — — — 1.10 — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = +16/–12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VGS = 10 V Note4 ID = 20 A, VGS = 4.5 V Note4 ID = 20 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 40 A VGS = 10 V, ID = 20 A, VDD ≅ 10 V,RL = 0.5 Ω, Rg = 4.7 Ω IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/ dt = 100 A/ µs Rev.6.00 Apr 19, 2006 page 2 of 6 RJK0303DPB Main Characteristics Power vs. Temperature Derating 80 1000 Maximum Safe Operation Area Pch (W) ID (A) 60 100 s Channel Dissipation Drain Current 40 10 20 1 limited by RDS(on) 0 50 100 150 200 Tc = 25°C 0.1 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 4.5 V 10 V Pulse Test 50 2.7 V Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 30 ID (A) Drain Current 40 40 30 Drain Current 20 2.5 V 20 25°C Tc = 75°C –25°C 2 3 4 5 10 VGS = 2.3 V 10 0 2 4 6 8 10 0 1 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 80 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 100 Pulse Test Drain to Source Saturation Voltage VDS (on) (mV) Pulse Test 60 30 40 10 VGS = 4.5 V 3 10 V ID = 10 A 20 5A 2A 0 1 1 3 10 30 100 300 1000 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.6.00 Apr 19, 2006 page 3 of 6 RJK0303DPB Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 10000 3000 Static Drain to Source on State Resistance RDS (on) (mΩ) Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 16 Ciss 1000 Coss 300 100 30 VGS = 0 f = 1 MHz 10 20 30 12 ID = 2 A, 5 A, 10 A VGS = 4.5 V 4 10 V 0 –25 0 25 50 2 A, 5 A, 10 A 75 100 125 150 8 Crss 10 0 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage VGS (V) 20 50 Dynamic Input Characteristics VDS (V) 50 Reverse Drain Current IDR (A) ID = 40 A VGS VDD = 25 V 10 V Pulse Test 10 V 40 5V 40 16 Drain to Source Voltage 30 VDS 12 Gate to Source Voltage 30 20 8 20 VGS = 0, –5 V 10 VDD = 25 V 10 V 0 20 40 60 80 4 10 0 0 100 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 50 IAP = 17 A 40 VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Rev.6.00 Apr 19, 2006 page 4 of 6 RJK0303DPB Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 2.27°C/W, Tc = 25°C PDM PW T 100 µ 1m 10 m 100 m 1 10 D= PW T 0.05 0.03 0 .02 p 1 0.0 hot s 1 ul se 0.01 10 µ Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP VDD VDS VDS Monitor L IAP Monitor EAR = Rg D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.6.00 Apr 19, 2006 page 5 of 6 RJK0303DPB Package Dimensions Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g Unit: mm 4.9 5.3 Max 4.0 ± 0.2 5 0.25 –0.03 +0.05 3.3 1.0 3.95 1 4 6.1 –0.3 +0.1 0° – 8° 1.1 Max +0.03 0.07 –0.04 0.75 Max 1.27 0.10 0.40 ± 0.06 0.25 M 0.6 –0.20 1.3 Max +0.25 0.20 –0.03 +0.05 (Ni/Pd/Au plating) Ordering Information Part Name RJK0303DPB-00-J0 Quantity 2500 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Apr 19, 2006 page 6 of 6 4.2 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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