RJK0316DSP-00-J0

RJK0316DSP Silicon N Channel Power MOS FET Power Switching REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 4 G 5678 DDDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 8 12 SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg Note1 Ratings 30 +16/–12 16 128 16 16 25.6 2.0 62.5 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 1 of 7 RJK0316DSP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 5.3 7.2 40 2080 650 100 1.4 13.8 5.3 2.9 6.5 5.0 45 4.0 0.81 30 Max — ± 0.1 1 2.5 6.4 9.4 — — — — — — — — — — — — 1.06 — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = +16/-12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 8 A, VGS = 10 V Note4 ID = 8 A, VGS = 4.5 V Note4 ID = 8 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 16 A VGS = 10 V, ID = 8 A VDD ≅ 10 V RL = 1.25 Ω Rg = 4.7 Ω IF = 16 A, VGS = 0 Note4 IF = 16 A, VGS = 0 diF/ dt = 100 A/ µs REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 2 of 7 RJK0316DSP Main Characteristics Power vs. Temperature Derating 4.0 500 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW ≤ 10 s 10 µs Maximum Safe Operation Area Channel Dissipation Pch (W) 100 Drain Current ID (A) 3.0 PW 1m 10 10 DC =1 s 0µ s Op 0m s 2.0 era tio 1 Operation in this area is limited by RDS(on) n( PW ≤ 1 Note 0s 5 ) 1.0 0.1 0.01 0.1 Ta = 25 °C 1 shot Pulse 0 50 100 150 200 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 50 10 V 50 3.0 V Typical Transfer Characteristics V DS = 10 V Pulse Test Drain Current ID (A) 7V Drain Current ID (A) 40 2.8 V 40 30 2.6 V 20 30 25°C Tc = 75°C 10 –25°C 20 10 VGS = 2.4 V Pulse Test 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) 100 Pulse Test 50 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Voltage VDS(on) (mV) 200 Pulse Test 160 20 10 VGS = 4.5 V 5 10 V 2 1 1 3 10 30 100 300 1000 120 80 ID = 10 A 40 5A 2A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 3 of 7 RJK0316DSP Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) 12 Pulse Test 10 8 VGS = 4.5 V 5 A, 10 A 20 A Forward Transfer Admittance |yfs| (S) 1000 300 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 VDS = 10 V Pulse Test 10 30 100 25°C 75°C Tc = –25°C 6 ID = 5 A, 10 A, 20 A 4 2 –25 10 V 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 3000 Ciss Body Drain Diode Reverse Recovery Time 100 Reverse Recovery Time trr (ns) 50 Capacitance C (pF) 1000 Coss 300 100 30 10 0 Crss 20 di/dt = 100 A/µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100 10 0.1 VGS = 0 f = 1 MHz 5 10 15 20 25 30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 1000 Drain to Source Voltage VDS (V) 50 Gate to Source Voltage VGS (V) ID = 16 A VGS 30 VDS VDD = 25 V 10 V 5V 12 Switching Time t (ns) 40 16 300 100 30 tf 10 3 1 0.1 td(on) tr td(off) 20 8 10 VDD = 25 V 10 V 5V 10 20 30 40 4 0 50 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.3 1 3 10 30 100 0 Gate Charge Qg (nc) Drain Current ID (A) REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 4 of 7 RJK0316DSP Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) 50 50 IAP = 16 A VDD = 15 V duty < 0.1 % Rg > 50 Ω Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IDR (A) 10 V 40 5V 40 30 VGS = –5, 0 V 30 20 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 10 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 θch - f(t) = γs (t) x θch - f θch - f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6 mm) pu lse PDM PW T 0.001 1 D= t sho PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Avalanche Test Circuit L IAP Monitor Rg Vin 15 V D. U. T VDD IAP VDS ID 50 Ω VDD Avalanche Waveform EAR = 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS VDS Monitor 0 REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 5 of 7 RJK0316DSP Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V VDS = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform 90% REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 6 of 7 RJK0316DSP Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g *1 D F 8 5 *2 E HE bp Index mark 1 Z e 4 * 3 bp xM c Terminal cross section (Ni/Pd/Au plating) NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min L1 L D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 A 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 A1 y Detail F 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part Name RJK0316DSP-00-J0 Note: Quantity 2500 pcs Taping Shipping Container For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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