RJK0329DPB-01-J0

Preliminary Datasheet RJK0329DPB-01 Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      R07DS0265EJ0500 (Previous: REJ03G1638-0400) Rev.5.00 Mar 01, 2011 Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Note1 Ratings 30 20 55 220 55 25 62.5 60 2.08 150 –55 to +150 Unit V V A A A A mJ W C/W C C R07DS0265EJ0500 Rev.5.00 Mar 01, 2011 Page 1 of 6 RJK0329DPB-01 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Body–drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Qrr Min 30 — — 1.2 — — — — — — — — — — — — — — — — — Typ — — — — 1.8 2.4 100 5330 980 295 0.5 35 13 7.3 7.7 4.0 59 6.8 0.78 40 42 Max — 0.1 1 2.5 2.3 3.4 — — — — — — — — — — — — 1.02 — — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns nC Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 27.5 A, VGS = 10 V Note4 ID = 27.5 A, VGS = 4.5 V Note4 ID = 27.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 55 A VGS = 10 V, ID = 27.5 A, VDD  10 V, RL = 0.36 , Rg = 4.7  IF = 55 A, VGS = 0 Note4 IF = 55 A, VGS = 0 diF/ dt = 100 A/ s R07DS0265EJ0500 Rev.5.00 Mar 01, 2011 Page 2 of 6 RJK0329DPB-01 Preliminary Main Characteristics Power vs. Temperature Derating 80 1000 Maximum Safe Operation Area Pch (W) ID (A) 60 100 10 10 0 μs Channel Dissipation μs 1 ms Drain Current 40 10 PW = 10 ms DC on ati er Op 20 1 Operation in this area is limited by RDS(on) Tc = 25°C 0 50 100 150 200 0.1 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 4.5 V 10 V Pulse Test 3.2 V 3.0 V 60 100 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) ID (A) Drain Current 80 80 60 Drain Current 40 2.8 V 40 25°C Tc = 75°C –25°C 20 VGS = 2.6 V 20 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (mV) 10 Pulse Test Pulse Test 150 3 VGS = 4.5 V 10 V 100 1 50 ID = 20 A 10 A 5A 0.3 0 0.1 1 3 10 30 100 300 1000 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain Current ID (A) R07DS0265EJ0500 Rev.5.00 Mar 01, 2011 Page 3 of 6 RJK0329DPB-01 Static Drain to Source on State Resistance vs. Temperature 10 Pulse Test 10000 3000 Preliminary Typical Capacitance vs. Drain to Source Voltage Static Drain to Source on State Resistance RDS (on) (mΩ) Ciss Capacitance C (pF) 8 1000 Coss 300 Crss 100 30 VGS = 0 f = 1 MHz 10 20 30 6 ID = 5 A, 10 A, 20 A 4 VGS = 4.5 V 2 10 V 0 –25 0 25 50 5 A, 10 A, 20 A 75 100 125 150 10 0 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage VGS (V) 20 100 Dynamic Input Characteristics VDS (V) 50 VGS 16 Reverse Drain Current IDR (A) ID = 55 A VDD = 25 V 10 V Pulse Test 10 V 80 5V 40 Drain to Source Voltage 30 VDS 20 12 Gate to Source Voltage 60 8 40 VGS = 0, –5V 10 VDD = 25 V 10 V 0 40 80 120 160 4 20 0 0 200 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 100 IAP = 25 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 80 60 40 20 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0265EJ0500 Rev.5.00 Mar 01, 2011 Page 4 of 6 RJK0329DPB-01 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 Preliminary D=1 0.5 0.3 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 2.09°C/W, Tc = 25°C PDM PW T 100 μ 1m 10 m 100 m 1 10 D= PW T 0.05 0.03 0 .02 p 1 0.0 hot s 1 ul se 0.01 10 μ Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP VDD VDS VDS Monitor L IAP Monitor EAR = Rg D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf R07DS0265EJ0500 Rev.5.00 Mar 01, 2011 Page 5 of 6 RJK0329DPB-01 Preliminary Package Dimensions Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g Unit: mm 4.9 5.3 Max 4.0 ± 0.2 5 0.25 –0.03 +0.05 3.3 1.0 3.95 1 4 6.1 –0.3 +0.1 0° – 8° 1.1 Max +0.03 0.07 –0.04 0.75 Max 1.27 0.10 0.40 ± 0.06 0.25 M 0.6 –0.20 1.3 Max +0.25 0.20 –0.03 +0.05 (Ni/Pd/Au plating) Ordering Information Part No. RJK0329DPB-01-J0 Quantity 2500 pcs Taping Shipping Container R07DS0265EJ0500 Rev.5.00 Mar 01, 2011 4.2 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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