RJK0354DSP_10

Preliminary Datasheet RJK0354DSP Silicon N Channel Power MOS FET Power Switching Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 m typ. (at VGS = 10 V)  Pb-free     REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 6 87 5 5678 DDDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 12 34 4 G SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 ch-a Note3 Tch Tstg Note1 Ratings 30 ±20 16 128 16 15 22.5 2.0 62.5 150 –55 to +150 Unit V V A A A A mJ W C/W C C Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Page 1 of 6 RJK0354DSP Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 5.4 7.5 40 1740 335 110 4.4 12 4.3 2.5 7.4 3.6 56.4 5.5 0.81 20 Max — ± 0.1 1 2.5 7.0 10.5 — — — — — — — — — — — — 1.06 — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 8 A, VGS = 10 V Note4 ID = 8 A, VGS = 4.5 V Note4 ID = 8 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 16 A VGS = 10 V, ID = 8 A VDD  10 V RL = 1.25  Rg = 4.7  IF = 16 A, VGS = 0 Note4 IF = 16 A, VGS = 0 diF/ dt = 100 A/ s REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Page 2 of 6 RJK0354DSP Preliminary Main Characteristics Power vs. Temperature Derating 4.0 Maximum Safe Operation Area 500 Channel Dissipation Pch (W) 3.0 Drain Current ID (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW ≤ 10 s 100 1m s =1 Op 0m era s ti PW on 10 DC 2.0 1.0 (P WN 1 Operation in < 1 ote 0s 5 this area is ) limited by RDS(on) 0.1 0.01 0.1 Ta = 25°C 1 shot Pulse 0.3 1 3 10 30 100 0 50 100 150 200 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 20 4.5 V 10 V 3.1 V Pulse Test 3.0 V 20 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 12 ID (A) Drain Current 16 16 2.9 V 12 Drain Current 8 2.8 V 4 2.7 V 8 25°C –25°C 4 Tc = 75°C VGS = 2.6 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 160 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) 100 Pulse Test Drain to Source Saturation Voltage VDS (on) (mV) Pulse Test 120 30 80 10 VGS = 4.5 V 10 V ID = 10 A 40 5A 2A 3 0 4 8 12 16 20 1 1 3 10 30 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Page 3 of 6 RJK0354DSP Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 ID = 2 A, 5 A, 10 A 12 VGS = 4.5 V 10000 3000 Preliminary Typical Capacitance vs. Drain to Source Voltage Static Drain to Source on State Resistance RDS(on) (mΩ) Capacitance C (pF) Ciss 1000 300 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30 Coss Crss 8 4 0 –25 10 V 2 A, 5 A, 10 A 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage VGS (V) 20 20 Dynamic Input Characteristics VDS (V) 50 VGS 16 VDD = 25 V 10 V Reverse Drain Current IDR (A) ID = 16 A 10 V 16 5V Pulse Test 40 Drain to Source Voltage 30 Gate to Source Voltage VDS 12 12 20 8 8 VGS = 0, –5 V 10 VDD = 25 V 10 V 0 10 20 30 40 4 4 0 0 50 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 50 IAP = 15 A VDD = 15 V duty < 0.1% Rg ≥ 50 Ω 40 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Page 4 of 6 RJK0354DSP Normalized Transient Thermal Impedance vs. Pulse Width 10 Preliminary Normalized Transient Thermal Impedance γs (t) 1 D=1 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.01 0.001 1 o sh tp uls e θch – f(t) = γs (t) • θch – f θch – f = 85°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM PW T D= PW T 0.0001 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP VDD VDS VDS Monitor L IAP Monitor EAR = Rg D. U. T ID Vin 15 V 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Page 5 of 6 RJK0354DSP Preliminary Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g *1 D F 8 5 *2 E HE bp Index mark 1 Z e 4 * 3 bp xM c Terminal cross section (Ni/Pd/Au plating) NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Symbol Dimension in Millimeters Min L1 L D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 A 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 A1 y Detail F 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part No. RJK0354DSP-00-J0 Quantity 2500 pcs Taping Shipping Container REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. 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