RJK0355DPA-01#J0B

Preliminary Datasheet RJK0355DPA 30V, 30A, 10.7m max. N Channel Power MOS FET High Speed Power Switching R07DS0916EJ0700 Rev.7.00 Mar 19, 2013 Features        High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 30 120 30 9 8.1 25 5 150 –55 to +150 Unit V V A A A A mJ W C/W C C Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C R07DS0916EJ0700 Rev.7.00 Mar 19, 2013 Page 1 of 6 RJK0355DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — Typ — — — — 8.2 11.8 55 860 165 53 4.2 6.3 2.3 1.4 6.9 4.1 40.8 Max — ± 0.1 1 2.5 10.7 16.5 — — — — — — — — — — — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns — — — 5.6 0.87 20 — 1.14 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 30 A VGS = 10 V, ID = 15 A VDD  10 V RL = 0.66  Rg = 4.7  IF = 30 A, VGS = 0 Note4 IF =30 A, VGS = 0 diF/ dt = 100 A/ s Notes: 4. Pulse test R07DS0916EJ0700 Rev.7.00 Mar 19, 2013 Page 2 of 6 RJK0355DPA Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating ID (A) 1000 20 1 50 100 150 Case Temperature 10 200 PW = 10 ms 1 Operation in this area is limited by RDS(on) 10 Drain to Source Voltage Tc (°C) Pulse Test 3.2 V ID (A) 16 3.0 V 12 Drain Current 12 16 VDS = 10 V Pulse Test 8 2.8 V 4 8 25°C 4 Tc = 75°C VGS = 2.6 V 4 6 8 –25°C Pulse Test 150 100 ID = 10 A 50 5A 2A 4 8 12 Gate to Source Voltage R07DS0916EJ0700 Rev.7.00 Mar 19, 2013 16 20 VGS (V) 1 2 3 4 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 0 10 Static Drain to Source On State Resistance RDS (on) (mΩ) 2 Drain to Source Voltage Drain to Source Saturation Voltage VDS (on) (mV) VDS (V) 20 4.5 V 10 V 0 100 Typical Transfer Characteristics Typical Output Characteristics 0 μs s s 0.1 1 shot Pulse 0.1 1 20 ID (A) 0μ m Tc = 25°C 0 Drain Current 10 n tio ra pe 10 10 100 O Drain Current 30 DC Channel Dissipation Pch (W) 40 5 VGS (V) Static Drain to Source On State Resistance vs. Drain Current 100 Pulse Test 30 VGS = 4.5 V 10 10 V 3 1 1 3 10 30 Drain Current 100 ID 300 1000 (A) Page 3 of 6 Preliminary Static Drain to Source On State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 50 10000 Pulse Test 3000 40 Capacitance C (pF) Static Drain to Source On State Resistance RDS (on) (mΩ) RJK0355DPA 30 ID = 2 A, 5 A, 10 A 20 VGS = 4.5 V 10 1000 Ciss 300 100 30 2 A, 5 A, 10 A 10 V 0 –25 0 25 50 75 10 0 100 125 150 Case Temperature Tc (°C) 12 VDS 20 8 10 4 VDD = 25 V 10 V 0 0 0 8 16 Gate Charge 24 32 20 30 40 Qg (nc) 50 Reverse Drain Current IDR (A) 16 VDD = 25 V 10 V VGS (V) 20 VGS 40 30 10 Reverse Drain Current vs. Source to Drain Voltage Gate to Source Voltage VDS (V) Drain to Source Voltage ID = 30 A Crss VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 Coss Pulse Test 10 V 40 5V 30 20 VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 20 IAP = 9 A VDD = 15 V 16 duty < 0.1 % Rg ≥ 50 Ω 12 8 4 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0916EJ0700 Rev.7.00 Mar 19, 2013 Page 4 of 6 RJK0355DPA Preliminary 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 5 0.0 θch – c (t) = γ s (t) • θch – c θch – c = 5.0°C/W, Tc = 25°C 02 0. 01 0. 1s ho tp ul se Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 0.03 0.01 10 μ D= PDM PW T PW T 100 μ 10 m 1m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) R07DS0916EJ0700 Rev.7.00 Mar 19, 2013 10% tr 90% td(off) tf Page 5 of 6 RJK0355DPA Preliminary Package Dimensions JEITA Package Code ⎯ RENESAS Code PWSN0008DE-A Previous Code WPAK(3F)V MASS[Typ.] 0.075g 0.85Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK(3F) 4.23Typ 1.27Typ +0.1 -0.2 1.27Typ 0.5 ± 0.15 5.9 +0.1 -0.3 6.1 0.05Max 0Min Stand-off 0.545Typ 3.6 ± 0.2 3.92 ± 0.22 0.21Typ 0.42 ± 0.08 4.90 ± 0.1 (Sn plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Orderable Part Number RJK0355DPA-01-J0B Note: Quantity 2500 pcs Shipping Container Taping The symbol of 2nd "-" is occasionally presented as "#". R07DS0916EJ0700 Rev.7.00 Mar 19, 2013 Page 6 of 6 Notice 1. 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