RJK0366DSP

RJK0366DSP Silicon N Channel Power MOS FET Power Switching REJ03G1657-0301 Rev.3.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 mΩ typ. (at VGS = 10 V) • Pb-free • • • • Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 5678 DDDD 8 12 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR Note1 Ratings 30 ±20 11 88 11 11 12.1 2.0 62.5 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s REJ03G1657-0301 Rev.3.01 Apr 24, 2008 Page 1 of 6 RJK0366DSP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 9.0 12.5 30 1010 190 75 1.1 6.8 2.5 1.5 5.0 3.0 33.6 4.2 0.82 20 Max — ± 0.1 1 2.5 11.7 17.5 — — — — — — — — — — — — 1.07 — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 5.5 A, VGS = 10 V Note4 ID = 5.5 A, VGS = 4.5 V Note4 ID = 5.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 11 A VGS = 10 V, ID = 5.5 A VDD ≅ 10 V RL = 1.82 Ω Rg = 4.7 Ω IF = 11 A, VGS = 0 Note4 IF = 11 A, VGS = 0 diF/ dt = 100 A/ µs REJ03G1657-0301 Rev.3.01 Apr 24, 2008 Page 2 of 6 RJK0366DSP Main Characteristics Power vs. Temperature Derating 4.0 500 Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 3.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW ≤ 10 s 100 PW 1m =1 0m s 10 10 µ 0µ s s s 10 DC Op 2.0 era tio 1 1.0 Operation in this area is limited by RDS(on) Ta = 25 °C 1 shot Pulse n( PW ≤ 1 Note 0s 5 ) 0.1 0.01 0.1 0 50 100 150 200 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 20 4.5 V 10 V Typical Transfer Characteristics 20 VDS = 10 V Pulse Test ID (A) 12 3.0 V ID (A) Drain Current 16 3.2 V Pulse Test 16 12 Drain Current 8 2.8 V 8 25°C Tc = 75°C –25°C 4 4 VGS = 2.6 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (mV) 100 Pulse Test Pulse Test 150 30 VGS = 4.5 V 100 ID = 10 A 10 10 V 50 5A 2A 3 0 4 8 12 16 20 1 1 3 10 30 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1657-0301 Rev.3.01 Apr 24, 2008 Page 3 of 6 RJK0366DSP Static Drain to Source on State Resistance vs. Temperature 25 Pulse Test ID = 2 A, 5 A, 10 A VGS = 4.5 V 10000 3000 Static Drain to Source on State Resistance RDS (on) (mΩ) Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 20 Ciss 1000 300 Coss 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30 Crss 15 10 2 A, 5 A, 10 A 10 V 5 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage VGS (V) 20 20 Dynamic Input Characteristics VDS (V) 50 Reverse Drain Current IDR (A) ID = 11 A VGS 16 VDD = 25 V 10 V 10 V 16 5V Pulse Test 40 Drain to Source Voltage 30 VDS 12 Gate to Source Voltage 12 8 VGS = 0, –5 V 20 8 10 VDD = 25 V 10 V 0 10 20 30 40 4 4 0 50 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 20 IAP = 11 A 16 VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 12 8 4 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1657-0301 Rev.3.01 Apr 24, 2008 Page 4 of 6 RJK0366DSP Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance γs (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 1s t ho pu lse θch - f(t) = γs (t) x θch - f θch - f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM PW T D= PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD VDS Monitor L EAR = IAP Monitor IAP V(BR)DSS Rg D. U. T VDD VDS ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg Switching Time Waveform Vout Monitor 90% RL VDS = 10 V Vin Vout 10% 10% 10% Vin 10 V 90% td(on) tr 90% td(off) tf REJ03G1657-0301 Rev.3.01 Apr 24, 2008 Page 5 of 6 RJK0366DSP Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g *1 D F 8 5 *2 E HE bp Index mark 1 Z 4 * 3 bp xM c Terminal cross section (Ni/Pd/Au plating) NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Dimension in Millimeters Symbol Min L1 L D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 A 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 A1 y Detail F 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part No. RJK0366DSP-00-J0 Quantity 2500 pcs Taping Shipping Container REJ03G1657-0301 Rev.3.01 Apr 24, 2008 Page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. 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