RJK0389DPA_10

Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features      Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D2) 234 D1 D1 D1 9 S1/D2 5 6 7 8 5678 1 G1 8 G2 9 4 321 4 S2 S2 S2 567 3 2 1 (Bottom View) 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source MOS1 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 Tch Tstg MOS1 30 ±20 15 60 15 8 6.4 10 150 –55 to +150 MOS2 30 ±20 20 80 20 11 12.1 10 150 –55 to +150 Unit V V A A A A mJ W °C °C Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C REJ03G1722-0410 Rev.4.10 May 13, 2010 Page 1 of 10 RJK0389DPA Preliminary Electrical Characteristics • MOS1 (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 8.2 11.8 32 860 165 53 4.2 6.3 2.3 1.4 6.9 4.1 40.8 5.6 0.84 20 Max — ±0.1 1 2.5 10.7 16.5 — — — — — — — — — — — — 1.10 — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 7.5 A, VGS = 10 V Note4 ID = 7.5 A, VGS = 4.5 V Note4 ID = 7.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 15 A VGS = 10 V, ID = 7.5 A VDD  10 V RL = 1.33  Rg = 4.7  IF = 15 A, VGS = 0 Note4 IF =15 A, VGS = 0 diF/ dt = 100 A/s REJ03G1722-0410 Rev.4.10 May 13, 2010 Page 2 of 10 RJK0389DPA • MOS2 Preliminary (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Schottky Barrier diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 6.8 10.5 38 1000 240 100 4.5 7.2 2.9 2.2 8.5 4.0 39 6.6 0.44 12 Max — ±0.1 1 2.5 8.9 14.7 — — — — — — — — — — — — — — Unit V A mA V m m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID =1 mA ID = 10 A, VGS = 10 V Note4 ID = 10 A, VGS = 4.5 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 20 A VGS = 10 V, ID = 10 A VDD  10 V RL = 1.0  Rg = 4.7  IF = 2 A, VGS = 0 Note4 IF = 20 A, VGS = 0 diF/ dt = 100 A/s REJ03G1722-0410 Rev.4.10 May 13, 2010 Page 3 of 10 RJK0389DPA Preliminary Main Characteristics • MOS1 Power vs. Temperature Derating 20 1000 Maximum Safe Operation Area Pch (W) ID (A) 15 100 Channel Dissipation Drain Current 10 10 10 1m ms s 5 Operation in this area is 1 limited by RDS(on) DC Tc = 25°C 1 shot Pulse 1 op er ati on 0 50 100 150 200 0.1 0.1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 4.5 V 10 V 3.2 V Pulse Test 20 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 12 3.0 V ID (A) Drain Current 16 16 12 Drain Current 8 2.8 V 4 8 25°C –25°C 4 VGS = 2.6 V 0 2 4 6 8 10 0 Tc = 75°C 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (mV) 200 Pulse Test Static Drain to Source On State Resistance vs. Drain Current 100 Pulse Test 150 30 VGS = 4.5 V 10 10 V 3 100 ID = 10 A 50 5A 2A 0 4 8 12 16 20 1 1 3 10 30 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1722-0410 Rev.4.10 May 13, 2010 Page 4 of 10 RJK0389DPA Static Drain to Source On State Resistance vs. Temperature 50 Pulse Test 10000 3000 Preliminary Typical Capacitance vs. Drain to Source Voltage Static Drain to Source On State Resistance RDS(on) (mΩ) Capacitance C (pF) 40 1000 Ciss 300 100 30 VGS = 0 f = 1 MHz 10 20 Coss Crss 30 ID = 2 A, 5 A, 10 A 20 VGS = 4.5 V 10 10 V 0 –25 0 25 50 2 A, 5 A, 10 A 75 100 125 150 10 0 30 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage VGS (V) 20 50 Dynamic Input Characteristics VDS (V) 50 40 VDD = 25 V 10 V 30 VDS 16 Reverse Drain Current IDR (A) ID = 15 A VGS 10 V 40 5V Pulse Test Drain to Source Voltage 12 Gate to Source Voltage 30 20 8 20 VGS = 0, –5 V 10 VDD = 25 V 10 V 0 8 16 24 32 4 10 0 40 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 10 8 6 4 2 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1722-0410 Rev.4.10 May 13, 2010 Page 5 of 10 RJK0389DPA Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 Preliminary D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0 .02 p 1 0.0 hot s 1 ul se PDM PW T 1m 10 m 100 m 1 D= PW T 0.01 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP VDD VDS VDS Monitor L IAP Monitor EAR = Rg D. U. T ID Vin 15 V 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf REJ03G1722-0410 Rev.4.10 May 13, 2010 Page 6 of 10 RJK0389DPA • MOS2 and Schottky Barrier Diode Power vs. Temperature Derating 20 1000 Preliminary Maximum Safe Operation Area Pch (W) ID (A) 15 100 1m ms Channel Dissipation Drain Current 10 10 Operation in this area is limited by RDS(on) Tc = 25°C 10 s DC 5 1 Op on ati er 0 50 100 150 200 0.1 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 4.5 V 10 V 3.0 V Pulse Test 20 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 2.9 V 12 2.7 V 8 ID (A) Drain Current 16 16 12 Drain Current 8 25°C Tc = 75°C –25°C 4 2.5 V 4 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (mV) 200 Pulse Test Static Drain to Source On State Resistance vs. Drain Current 100 Pulse Test 150 30 VGS = 4.5 V 10 10 V 3 100 ID = 10 A 50 5A 2A 0 4 8 12 16 20 1 1 3 10 30 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1722-0410 Rev.4.10 May 13, 2010 Page 7 of 10 RJK0389DPA Static Drain to Source On State Resistance vs. Temperature 50 Pulse Test 10000 3000 Preliminary Typical Capacitance vs. Drain to Source Voltage Static Drain to Source On State Resistance RDS(on) (mΩ) Capacitance C (pF) 40 1000 Ciss 300 100 30 VGS = 0 f = 1 MHz 10 20 30 Coss Crss 30 ID = 2 A, 5 A, 10 A VGS = 4.5 V 10 0 –25 10 V 0 25 50 2 A, 5 A, 10 A 75 100 125 150 20 10 0 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage VGS (V) 20 50 Dynamic Input Characteristics VDS (V) 50 Reverse Drain Current IDR (A) ID = 20 A VGS 16 VDD = 25 V 10 V Pulse Test 10 V 40 5V 40 Drain to Source Voltage 30 VDS 12 Gate to Source Voltage 30 20 8 20 VGS = 0, –5 V 10 VDD = 25 V 10 V 0 8 16 24 32 4 10 0 40 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 20 16 12 8 4 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1722-0410 Rev.4.10 May 13, 2010 Page 8 of 10 RJK0389DPA Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 Preliminary D=1 0.5 0.3 0.2 0.1 0.1 0.05 PDM 0.03 2 0.0 .01 0 1s h p ot ul se D= PW T PW T 0.01 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP VDD VDS VDS Monitor L IAP Monitor EAR = Rg D. U. T ID Vin 15 V 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf REJ03G1722-0410 Rev.4.10 May 13, 2010 Page 9 of 10 RJK0389DPA Preliminary Package Dimensions Package Name WPAK-D(2) JEITA Package Code ⎯ RENESAS Code PWSN0008DD-A Previous Code WPAK-D(2)V MASS[Typ.] 0.07g Unit : mm 5.1 ± 0.2 0.8 Max 0.5 ± 0.15 0.4 ± 0.06 3.9 ± 0.2 0.9 ± 0.15 1.1 ± 0.2 (0.6) (0.6) 6.1 5.9 0.4 ± 0.15 0.545Typ 1.27 Typ 0.2 Typ 0.935 ± 0.15 2.9 ± 0.2 0.05Max 0Min Stand-off 4.9 ± 0.1 (Ni/Pd/Au plating) Ordering Information Part No. RJK0389DPA-00-J53 Quantity 3000 pcs Taping Shipping Container REJ03G1722-0410 Rev.4.10 May 13, 2010 Page 10 of 10 0.5 ± 0.15 0.45 ± 0.1 (0.05) 2.2 ± 0.2 +0.1 −0.3 +0.1 −0.2 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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