RJK03C5DPA-00-J53

Preliminary Datasheet RJK03C5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1921-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5678 DDDD 5678 4 G 4321 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 50 200 50 20 40 50 2.5 150 –55 to +150 Unit V V A A A A mJ W C/W C C REJ03G1921-0200 Rev.2.00 Apr 27, 2010 Page 1 of 6 RJK03C5DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 2.4 3.3 95 3110 690 310 1.8 22 10 5.8 17 8 58 11 0.39 35 Max — ± 0.1 1 2.5 2.9 4.3 — 4350 — — 3.6 — — — — — — — — — Unit V A mA V m m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 25A, VGS = 10 V Note4 ID = 25A, VGS = 4.5 V Note4 ID = 25 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 50 A VGS = 10 V, ID = 25 A VDD  10 V RL = 0.4  Rg = 4.7  IF = 2 A, VGS = 0 Note4 IF =50 A, VGS = 0 diF/ dt = 100 A/ s REJ03G1921-0200 Rev.2.00 Apr 27, 2010 Page 2 of 6 RJK03C5DPA Preliminary Main Characteristics Power vs. Temperature Derating 80 1000 10 μs Maximum Safe Operation Area Pch (W) ID (A) 60 100 10 1 0 m s μs Channel Dissipation Drain Current 40 10 PW = 10 ms DC t era Op 20 1 Operation in this area is limited by RDS(on) io n 0 50 100 150 200 Tc = 25°C 0.1 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 4.5 V 10 V 3.0 V Pulse Test 2.8 V 100 Typical Transfer Characteristics VDS = 5 V Pulse Test ID (A) 60 ID (A) Drain Current 80 80 60 2.6 V Drain Current 40 40 25°C –25°C 20 VGS = 2.4 V 20 Tc = 75°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) Static Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (mV) 200 Static Drain to Source On State Resistance vs. Drain Current 100 Pulse Test Pulse Test 150 30 100 10 50 ID = 20 A 10 A 5A VGS = 4.5 V 3 10 V 1 1 0 4 8 12 16 20 3 10 30 100 300 1000 Gate to Source Voltage V GS (V) Drain Current ID (A) REJ03G1921-0200 Rev.2.00 Apr 27, 2010 Page 3 of 6 RJK03C5DPA Static Drain to Source On State Resistance vs. Temperature 10 Pulse Test 10000 3000 Preliminary Typical Capacitance vs. Drain to Source Voltage Static Drain to Source On State Resistance RDS(on) (mΩ) Capacitance C (pF) 8 Ciss 1000 300 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30 Coss Crss 6 VGS = 4.5 V ID = 5 A, 10 A, 20 A 4 2 0 –25 10 V 5 A, 10 A, 20 A 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage VGS (V) 20 100 Dynamic Input Characteristics VDS (V) 50 Reverse Drain Current IDR (A) ID = 50 A VDD = 25 V 10 V VGS 16 Pulse Test 10 V 80 5V 40 Drain to Source Voltage 30 VDS 12 Gate to Source Voltage 60 20 8 40 VGS = 0, –5 V 10 VDD = 25 V 10 V 0 20 40 60 80 4 20 0 0 100 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 50 IAP = 20 A VDD = 15 V duty < 0.1% Rg ≥ 50 Ω 40 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1921-0200 Rev.2.00 Apr 27, 2010 Page 4 of 6 RJK03C5DPA Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Preliminary 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 2 0.0 lse 1 t pu .0 o 0 h 1s θch − c(t) = γs (t) • θch − c θch − c = 2.5°C/W, Tc = 25°C PDM PW T D= PW T 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP Rg D. U. T VDD VDS VDS Monitor L IAP Monitor EAR = ID Vin 15 V 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf REJ03G1921-0200 Rev.2.00 Apr 27, 2010 Page 5 of 6 RJK03C5DPA Preliminary Package Dimensions Package Name WPAK(2) JEITA Package Code ⎯ RENESAS Code PWSN0008DC-A Previous Code WPAK(2)V MASS[Typ.] 0.07g Unit: mm 0.5 ± 0.15 4.21Typ 1.27Typ 5.1 ± 0.2 0.8Max 3.9 ± 0.2 6.1 5.9 0.04Min 0.7Typ 0.545Typ 1.27Typ 0.2Typ 0.5 ± 0.15 3.6 ± 0.2 +0.1 -0.3 +0.1 -0.2 0.4 ± 0.06 0.05Max 0Min Stand-off 4.90 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part No. RJK03C5DPA-00-J53 Quantity 3000 pcs Taping Shipping Container REJ03G1921-0200 Rev.2.00 Apr 27, 2010 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. 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