RJK03F6DNS

Datasheet RJK03F6DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V)  Pb-free  Halogen-free      REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5678 DDDD 5 6 78 4 G 4321 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±12 30 120 30 15 22.5 20 6.25 150 –55 to +150 Unit V V A A A A mJ W C/W C C REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Page 1 of 6 RJK03F6DNS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 4.5 5.1 70 3000 310 200 0.65 22.0 6.2 8.6 16.7 9.3 49.6 9.2 0.87 26 Max — ± 0.1 1 2.5 5.4 6.4 — 4200 — — 1.85 — — — — — — — 1.13 — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 8 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 30 A VGS = 8 V, ID = 15 A VDD  10 V RL = 0.67  Rg = 4.7  IF = 30 A, VGS = 0 Note4 IF =30 A, VGS = 0 diF/ dt = 100 A/ s REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Page 2 of 6 RJK03F6DNS Main Characteristics Power vs. Temperature Derating 40 1000 Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 30 100 1 10 PW = 10 ms 1 10 m s 10 0 μs μs 20 10 Operation in this area is limited by RDS(on) Tc = 25 °C DC Op er at ion 0 50 100 150 200 0.1 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 4.5 V 8V 3.0 V 50 Typical Transfer Characteristics VDS = 5 V Pulse Test Pulse Test Drain Current ID (A) 2.8 V 30 Drain Current ID (A) 40 40 30 20 2.7 V 20 10 VGS = 2.5 V 10 Tc = 75°C 25°C –25°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) 320 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Registance RDS(on) (mΩ) 100 Pulse Test Pulse Test 30 240 160 10 VGS = 4.5 V 3 8V ID = 20 A 80 10 A 5A 0 3 6 9 12 1 1 3 10 30 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Page 3 of 6 RJK03F6DNS Static Drain to Source on State Resistance vs. Temperature Drain to Source On State Registance RDS(on) (m) 10 Pulse Test ID = 5 A, 10A, 20A 10000 3000 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 8 Ciss 1000 300 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30 Coss Crss 6 VGS = 4.5 V 5 A, 10A, 20A 4 8V 2 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 50 Reverse Drain Current vs. Source to Drain Voltage 20 50 Reverse Drain Current IDR (A) ID = 30 A VGS 10 V 40 5V Pulse Test 40 16 30 VDS 12 VDD = 25 V 10 V 8 30 20 20 VGS = 0, –5 V 10 VDD = 25 V 10 V 4 10 0 0 10 20 30 40 0 50 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy E AR (mJ) 25 IAP = 15 A VDD = 15 V duty < 0.1% Rg  50  20 15 10 5 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Page 4 of 6 RJK03F6DNS Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 1 D=1 0.5 0.3 0.2 0.1 0.1 θch − c(t) = γs (t) • θch − c θch − c = 6.25°C/W, Tc = 25°C PDM PW T 0.05 0.03 2 0.0 e ls 01 0. t pu ho 1s D= PW T 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP Rg D. U. T VDD VDS VDS Monitor L IAP Monitor EAR = ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Page 5 of 6 RJK03F6DNS Package Dimensions Package Name HWSON-8 JEITA Package Code P-HWSON8-2.9x3.1-0.65 RENESAS Code PWSN0008JB-A Previous Code ⎯ MASS[Typ.] 0.022g 3.3 ± 0.1 +0.15 −0.1 3.3 ± 0.1 0.1 Min 2.9 ± 0.1 1.55 ± 0.2 0.4 0.8 Max 2.25 ± 0.2 (2.55) +0.15 −0.1 Ordering Information Part Name RJK03F6DNS-00-J5 Quantity 5000 pcs Taping Shipping Container REJ03G1916-0100 Rev.1.00 Apr 21, 2010 0.04Max 0Min Stand-off 3.1 ± 0.1 0.4 0.575 Typ 0.65 Typ 0.22 Typ 0.32 ± 0.08 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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