RJK0453DPB

Preliminary Datasheet RJK0453DPB Silicon N Channel Power MOS FET Power Switching Features     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting R07DS0075EJ0102 (Previous: REJ03G1762-0101) Rev.1.02 Jul 30, 2010  Low on-resistance RDS(on) = 1.9 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain SSS 123 Application  Switching Mode Power Supply Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Ratings 40 20 55 220 55 27.5 60.5 65 1.92 150 –55 to +150 Unit V V A A A A mJ W C/W C C This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (VGS(off)) which characteristics has been improved. R07DS0075EJ0102 Rev.1.02 Jul 30, 2010 Page 1 of 6 RJK0453DPB Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 40 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 1.9 2.4 123 6040 930 400 0.5 41 18 9.0 20 6.5 80 12 0.83 40 Max — 0.1 1 2.5 2.3 3.2 — — — — — — — — — — — — 1.1 — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 40 V, VGS = 0 V VDS = 10 V, ID = 1 mA ID = 27.5 A, VGS = 10 V Note4 ID = 27.5 A, VGS = 4.5 V Note4 ID = 27.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 55 A VGS = 10 V, ID = 27.5 A, VDD  10 V, RL = 0.36 , Rg = 4.7  IF = 55 A, VGS = 0 V Note4 IF = 55 A, VGS = 0 V diF/ dt = 100 A/ s R07DS0075EJ0102 Rev.1.02 Jul 30, 2010 Page 2 of 6 RJK0453DPB Preliminary Main Characteristics Power vs. Temperature Derating 80 1000 Maximum Safe Operation Area Pch (W) 10 ID (A) μs 10 60 100 0 μs Channel Dissipation 1 ms Drain Current 40 10 PW = 10 ms DC on ati er Op 20 1 Operation in this area is limited by RDS(on) 0 50 100 150 200 Tc = 25°C 0.1 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 3.0 V 4.5 V Pulse Test 2.9 V 50 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 2.7 V 30 ID (A) Drain Current 40 10 V 40 30 Drain Current 20 20 25°C Tc = 75°C –25°C 10 VGS = 2.5 V 10 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (mV) 200 Pulse Test 160 Drain to Source on State Resistance RDS (on) (mΩ) 100 Pulse Test 10 VGS = 4.5 V 1 10 V 120 80 40 5A ID = 20 A 10 A 0 4 8 12 16 20 0.1 1 10 100 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) R07DS0075EJ0102 Rev.1.02 Jul 30, 2010 Page 3 of 6 RJK0453DPB Static Drain to Source on State Resistance vs. Temperature 5 Pulse Test ID = 27.5 A 10000 Preliminary Typical Capacitance vs. Drain to Source Voltage Ciss Static Drain to Source on State Resistance RDS (on) (mΩ) 3 VGS = 4.5 V Capacitance C (pF) 4 1000 Coss Crss VGS = 0 V f = 1 MHz 10 20 30 40 2 10 V 1 0 –25 0 25 50 75 100 125 150 100 0 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage Gate to Source Voltage VGS (V) 20 50 Dynamic Input Characteristics Drain to Source Voltage VDS (V) 50 Reverse Drain Current IDR (A) ID = 55 A Pulse Test 10 V 40 5V 40 16 VGS 12 VDD = 25 V 10 V 8 30 VDS 30 20 20 VGS = 0 V 10 VDD = 25 V 10 V 0 20 40 60 80 4 10 0 0 100 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 100 IAP = 27.5 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 80 60 40 20 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0075EJ0102 Rev.1.02 Jul 30, 2010 Page 4 of 6 RJK0453DPB Normalized Transient Thermal Impedance vs. Pulse Width Preliminary Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.3 0.5 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 1.92°C/W, Tc = 25°C PDM PW T 1m 10 m 100 m 1 10 D= PW T 0.03 0.05 2 0.0 lse 01 t pu 0. o h 1s 100 μ 0.01 10 μ Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP VDD VDS VDS Monitor L IAP Monitor EAR = Rg D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf R07DS0075EJ0102 Rev.1.02 Jul 30, 2010 Page 5 of 6 RJK0453DPB Preliminary Package Dimensions Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g Unit: mm 4.9 5.3 Max 4.0 ± 0.2 5 0.25 –0.03 +0.05 3.3 1.0 3.95 1 4 6.1 –0.3 +0.1 0° – 8° 1.1 Max +0.03 0.07 –0.04 0.75 Max 1.27 0.10 0.40 ± 0.06 0.25 M 0.6 –0.20 1.3 Max +0.25 0.20 –0.03 +0.05 (Ni/Pd/Au plating) Ordering Information Part No. RJK0453DPB-00-J5 Quantity 2500 pcs Taping Shipping Container R07DS0075EJ0102 Rev.1.02 Jul 30, 2010 4.2 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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