RJK1054DPB

Preliminary Datasheet RJK1054DPB Silicon N Channel Power MOS FET Power Switching Features     High speed switching Low drive current Low on-resistance RDS(on) = 17 m typ. (at VGS = 10 V) R07DS0093EJ0200 (Previous: REJ03G1886-0100) Rev.2.00 Aug 17, 2010  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at L=10uH, Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Ratings 100 20 20 80 20 20 4.0 55 2.27 150 –55 to +150 Unit V V A A A A mJ W C/W C C R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 Page 1 of 6 RJK1054DPB Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 — — 2.0 — — — — — — — — — — — — — — — Typ — — — — 17 32 2000 350 80 0.5 27 9.0 4.5 12 3.8 32 5.4 0.8 48 Max — 0.1 1 4.0 22 — — — — — — — — — — — — 1.1 — Unit V A A V m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 100 V, VGS = 0 V VDS = 10 V, ID = 1 mA ID = 10 A, VGS = 10 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 50 V, VGS = 10 V, ID = 20 A VGS = 10 V, ID = 10 A, VDD  30 V, RL = 3 , Rg = 4.7  IF = 20 A, VGS = 0 V Note4 IF = 20 A, VGS = 0 V diF/ dt = 100 A/ s R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 Page 2 of 6 RJK1054DPB Preliminary Main Characteristics Power vs. Temperature Derating 80 1000 Maximum Safe Operation Area Tc = 25°C 1 shot Pulse Channel Dissipation Pch (W) 60 Drain Current ID (A) 100 10 40 1 m s 20 1 Operation in PW = 10 ms this area is limited by RDS(on) 0.1 DC Operation 0.01 0.1 0 50 100 150 200 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 5.0 V 4.8 V Pulse Test 50 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 30 4.4 V 20 4.2 V 10 Drain Current ID (A) 40 4.6 V 40 30 20 Tc = 75°C 25°C –25°C 10 VGS = 4.0 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test Drain to Source Saturation Voltage VDS (on) (mV) 700 Pulse Test 560 VGS = 10 V 420 ID = 20 A 280 10 A 140 5A 1 0.1 10 0 4 8 12 16 20 1 10 100 Gate to Source Voltage VGS (V) Drain Current ID (A) R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 Page 3 of 6 RJK1054DPB Static Drain to Source on State Resistance vs. Temperature 50 40 Pulse Test ID = 10 A 10000 Preliminary Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 1000 Ciss 30 VGS = 10 V 20 100 VGS = 0 V f = 1 MHz Coss Crss 40 60 80 100 10 0 –25 10 0 25 50 75 100 125 150 0 20 Case Temperature Tc ( °C) Drain to Source Voltage V DS (V) Reverse Drain Current vs. Source to Drain Voltage Dynamic Input Characteristics Drain to Source Voltage V DS (V) Reverse Drain Current IDR (A) ID = 20 A VDD = 50 V 25 V 10 V VDS VGS Gate to Source Voltage V GS (V) 100 20 20 Pulse Test 10 V 16 80 16 60 12 12 40 8 8 VGS = 0 V 20 VDD = 50 V 25 V 10 V 0 10 20 30 40 4 4 0 0 50 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source to Drain Voltage V SD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 5 4 3 2 1 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 Page 4 of 6 RJK1054DPB Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 Preliminary D=1 0.5 0.3 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 2.27°C/W, Tc = 25°C PDM PW T 100 μ 1m 10 m 100 m 1 10 D= PW T 0.05 0.03 0 .02 p 1 0.0 hot s 1 ul se 0.01 10 μ Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP VDD VDS VDS Monitor L IAP Monitor EAR = Rg D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 30 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 Page 5 of 6 RJK1054DPB Preliminary Package Dimensions Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g Unit: mm 4.9 5.3 Max 4.0 ± 0.2 5 0.25 –0.03 +0.05 3.3 1.0 3.95 1 4 6.1 –0.3 +0.1 0° – 8° 1.1 Max +0.03 0.07 –0.04 0.75 Max 1.27 0.10 0.40 ± 0.06 0.25 M 0.6 –0.20 1.3 Max +0.25 0.20 –0.03 +0.05 (Ni/Pd/Au plating) Ordering Information Part No. RJK1054DPB-00-J5 Quantity 2500 pcs Taping Shipping Container R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 4.2 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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