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RJK1054DPB

RJK1054DPB

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    RJK1054DPB - Silicon N Channel Power MOS FET Power Switching - Renesas Technology Corp

  • 数据手册
  • 价格&库存
RJK1054DPB 数据手册
Preliminary Datasheet RJK1054DPB Silicon N Channel Power MOS FET Power Switching Features     High speed switching Low drive current Low on-resistance RDS(on) = 17 m typ. (at VGS = 10 V) R07DS0093EJ0200 (Previous: REJ03G1886-0100) Rev.2.00 Aug 17, 2010  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at L=10uH, Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Ratings 100 20 20 80 20 20 4.0 55 2.27 150 –55 to +150 Unit V V A A A A mJ W C/W C C R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 Page 1 of 6 RJK1054DPB Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 — — 2.0 — — — — — — — — — — — — — — — Typ — — — — 17 32 2000 350 80 0.5 27 9.0 4.5 12 3.8 32 5.4 0.8 48 Max — 0.1 1 4.0 22 — — — — — — — — — — — — 1.1 — Unit V A A V m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 100 V, VGS = 0 V VDS = 10 V, ID = 1 mA ID = 10 A, VGS = 10 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 50 V, VGS = 10 V, ID = 20 A VGS = 10 V, ID = 10 A, VDD  30 V, RL = 3 , Rg = 4.7  IF = 20 A, VGS = 0 V Note4 IF = 20 A, VGS = 0 V diF/ dt = 100 A/ s R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 Page 2 of 6 RJK1054DPB Preliminary Main Characteristics Power vs. Temperature Derating 80 1000 Maximum Safe Operation Area Tc = 25°C 1 shot Pulse Channel Dissipation Pch (W) 60 Drain Current ID (A) 100 10 40 1 m s 20 1 Operation in PW = 10 ms this area is limited by RDS(on) 0.1 DC Operation 0.01 0.1 0 50 100 150 200 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 5.0 V 4.8 V Pulse Test 50 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 30 4.4 V 20 4.2 V 10 Drain Current ID (A) 40 4.6 V 40 30 20 Tc = 75°C 25°C –25°C 10 VGS = 4.0 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test Drain to Source Saturation Voltage VDS (on) (mV) 700 Pulse Test 560 VGS = 10 V 420 ID = 20 A 280 10 A 140 5A 1 0.1 10 0 4 8 12 16 20 1 10 100 Gate to Source Voltage VGS (V) Drain Current ID (A) R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 Page 3 of 6 RJK1054DPB Static Drain to Source on State Resistance vs. Temperature 50 40 Pulse Test ID = 10 A 10000 Preliminary Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 1000 Ciss 30 VGS = 10 V 20 100 VGS = 0 V f = 1 MHz Coss Crss 40 60 80 100 10 0 –25 10 0 25 50 75 100 125 150 0 20 Case Temperature Tc ( °C) Drain to Source Voltage V DS (V) Reverse Drain Current vs. Source to Drain Voltage Dynamic Input Characteristics Drain to Source Voltage V DS (V) Reverse Drain Current IDR (A) ID = 20 A VDD = 50 V 25 V 10 V VDS VGS Gate to Source Voltage V GS (V) 100 20 20 Pulse Test 10 V 16 80 16 60 12 12 40 8 8 VGS = 0 V 20 VDD = 50 V 25 V 10 V 0 10 20 30 40 4 4 0 0 50 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source to Drain Voltage V SD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 5 4 3 2 1 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 Page 4 of 6 RJK1054DPB Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 Preliminary D=1 0.5 0.3 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 2.27°C/W, Tc = 25°C PDM PW T 100 μ 1m 10 m 100 m 1 10 D= PW T 0.05 0.03 0 .02 p 1 0.0 hot s 1 ul se 0.01 10 μ Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP VDD VDS VDS Monitor L IAP Monitor EAR = Rg D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 30 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 Page 5 of 6 RJK1054DPB Preliminary Package Dimensions Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g Unit: mm 4.9 5.3 Max 4.0 ± 0.2 5 0.25 –0.03 +0.05 3.3 1.0 3.95 1 4 6.1 –0.3 +0.1 0° – 8° 1.1 Max +0.03 0.07 –0.04 0.75 Max 1.27 0.10 0.40 ± 0.06 0.25 M 0.6 –0.20 1.3 Max +0.25 0.20 –0.03 +0.05 (Ni/Pd/Au plating) Ordering Information Part No. RJK1054DPB-00-J5 Quantity 2500 pcs Taping Shipping Container R07DS0093EJ0200 Rev.2.00 Aug 17, 2010 4.2 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 http://www.renesas.com © 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0
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