RJK1536DPN_10

Preliminary Datasheet RJK1536DPN N-Channel Power MOSFET High-Speed Switching Use Features  VDSS : 150 V  RDS(on) : 30 m (Max)  ID : 50 A REJ03G1594-0300 Rev.3.00 Jun 30, 2010 Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 2, 4 D 1G 1 1. Gate 2. Drain 3. Source 4. Drain S 3 2 3 Application  Motor control, Solenoid control, DC-DC converter, etc. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Value at Tc = 25C 2. STch = 25C, Tch  150C, L = 100 H Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAP Note2 Pch Note1 ch-c Tch Tstg Ratings 150 ±20 50 100 50 100 25 125 1.0 150 –55 to +150 Unit V V A A A A A W C/W C C REJ03G1594-0300 Rev.3.00 Jun 30, 2010 Page 1 of 6 RJK1536DPN Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) VDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 150 — — 2.0 — — — — — — — — — — — Typ — — — 3.0 0.60 24 5000 560 165 50 75 250 100 0.9 130 Max — 100 ±0.1 4.0 0.75 30 — — — — — — — 1.5 — Unit V A A V V m pF pF pF ns ns ns ns V ns Test conditions ID = 1 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = 20 V, VDS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 25 A, VGS = 10 V Note3 ID = 25 A, VGS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 80 V ID = 25 A VGS = 10 V RG = 25  IF = 25 A, VGS = 0 IF = 50 A, VGS = 0 diF/dt = 100 A/s REJ03G1594-0300 Rev.3.00 Jun 30, 2010 Page 2 of 6 RJK1536DPN Preliminary Main Characteristics Power vs. Temperature Derating 150 1000 Maximum Safe Operation Area Ta = 25°C 10 10 m =1 ) PW shot (1 Channel Dissipation Pch (W) Drain Current ID (A) 125 100 70 50 25 100 0 μs μs 10 s 1 Operation in this area is limited by RDS(on) 0.1 0.01 0.1 0 50 100 150 200 1 10 100 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 7V 4.2 V 50 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) Drain Current ID (A) 40 40 30 4V 30 20 20 VGS = 3.8 V 10 Pulse Test 0 2 4 6 8 10 10 Tc = 75°C 25°C −25°C 4 5 0 1 2 3 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) 100 VGS = 10 V Drain to Source on State Resistance vs. Gate to Source Voltage Drain to Source on State Resistance RDS(on) (mΩ) 30 Pulse Test 28 26 10 24 ID = 50 A 5A 20 0 4 8 12 16 25 A 20 22 1 1 10 Pulse Test 100 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1594-0300 Rev.3.00 Jun 30, 2010 Page 3 of 6 RJK1536DPN Drain to Source on State Resistance vs. Temperature 60 VGS = 10 V 50 Pulse Test Preliminary Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 1000 Drain to Source on State Resistance RDS(on) (mΩ) 100 Tc = −25°C 40 25 A 30 ID = 50 A 10 A 20 10 −25 10 25°C 75°C VDS = 10 V Pulse Test 1 10 100 1 0 25 50 75 100 125 150 0.1 0.1 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 1000 10000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) 1000 Coss Crss 100 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 1 10 100 10 1 VGS = 0 f = 1 MHz 10 100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) VDD = 50 V 80 V 100 V 120 VDS 80 VGS 8 ID = 50 A 12 Switching Characteristics Gate to Source Voltage VGS (V) 16 1000 VGS = 10 V, VDD = 80 V PW = 5 μs, duty ≤ 1 % RG = 25 Ω tf td(off) 100 tr td(on) 160 40 VDD = 100 V 80 V 50 V 0 40 80 120 160 4 0 200 Switching Time t (ns) 10 1 10 100 Gate Charge Qg (nC) Drain Current ID (A) REJ03G1594-0300 Rev.3.00 Jun 30, 2010 Page 4 of 6 RJK1536DPN Reverse Drain Current vs. Source to Drain Voltage 50 Preliminary Avalanche Current vs.Case Temperature 30 L = 100 μH IDR (A) Avalanche Current IAP (A) Pulse Test 40 10 V 30 5V 25 20 15 10 5 0 25 Reverse Drain Current 20 VGS = 0 V, -5 V 10 0 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 175 200 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 1 D=1 0.5 0.3 0.2 0.1 0.05 0.1 0.02 1 0.0 e uls tp θch – c(t) = γs (t) • θch – c θch – c = 1.00°C/W, Tc = 25°C PDM PW T 0.03 1 o sh D= PW T 0.01 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 25 Ω Vin 10 V VDD = 80 V td(on) Vout Monitor Vin Vout 10% 10% Waveform 90% 10% 90% td(off) tf 90% tr REJ03G1594-0300 Rev.3.00 Jun 30, 2010 Page 5 of 6 RJK1536DPN Preliminary Package Dimensions Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 +0.2 –0.1 +0.1 –0.08 4.44 ± 0.2 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 1.5 Max 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name RJK1536DPN-00-02 Quantity 500 pcs Box (Sack) Shipping Container REJ03G1594-0300 Rev.3.00 Jun 30, 2010 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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