RJK5003DPD-00-Q2

RJK5003DPD Silicon N Channel Power MOS FET High Speed Power Switching Use REJ03G0580-0200 Rev.2.00 Mar 14, 2006 Features • • • • VDSS : 500 V RDS(on) : 1.5 Ω (MAX.) ID : 5 A Surface mount package (MP-3A) Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 3 Applications • Lighting ballast, SMPS, etc. Maximum Ratings (Tc = 25°C) Parameter Drain to source voltage Gate to source voltage Drain current Drain Peak current Avalanche current Channel dissipation Channel temperature Storage temperature Channel to case thermal impedance Note: Symbol VDSS VGSS ID ID (pulse)Note1 IAP Pch Tch Tstg θch-c Ratings 500 ±30 5 20 5 62.5 150 –55 to +150 2.0 Unit V V A A A W °C °C °C/W Channel to case Conditions VGS = 0 V VDS = 0 V L = 200 µH 1. Pulse width limited by safe operating area. Rev.2.00, Mar 14, 2006, page 1 of 6 RJK5003DPD Electrical Characteristics (Tch = 25°C) Parameter Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Note: 2. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF Min. 500 — — 3.0 — — — — — — — — — Typ. — — — 3.5 1.3 550 60 10 20 20 60 25 1.0 Max. — 1 ±0.1 4.0 1.5 — — — — — — — 1.5 Unit V mA µA V Ω pF pF pF ns ns ns ns V Test conditions ID = 1 mA, VGS = 0 V VDS = 500 V, VGS = 0 V VGS = ±25 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID= 2 A, VGS = 10 VNote2 VDS = 25 V, VGS= 0 V, f = 1 MHz VDD = 200 V, ID = 2 A, VGS = 10 V RG = 25 Ω IF = 2 A, VGS = 0 V Note2 Rev.2.00, Mar 14, 2006, page 2 of 6 RJK5003DPD Performance Curves Power vs. Temperature Derating 70 100 PW = Maximum Safe Operating Area Channel Dissipation Pch (W) 60 Drain Current ID (A) 50 40 30 20 10 0 10 10 0 µs 10 µs 1 DC 0.1 Operation in this area is limited by RDS(on) Tc = 25°C Single pulse 0 50 100 150 200 0.01 1 10 100 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 10 Tc = 25°C Pulse Test VGS = 20 V 10 V 5 Typical Output Characteristics VGS = 20 V 10 V 7V 5V 6V Drain Current ID (A) PDS = 62.5 W 6V 6 Drain Current ID (A) 8 7V 4 5V 3 Tc = 25°C Pulse Test 2 4 2 4V 0 0 4 8 12 16 20 1 4V 0 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage (Typical) Drain to Source Saturation Voltage VDS(on) (V) Drain to Source on State Resistance RDS(on) (Ω) 20 Tc = 25°C Pulse Test 16 ID = 8 A 12 Static Drain to Source on State Resistance vs. Drain Current (Typical) 4 Tc = 25°C Pulse Test 3.2 2.4 VGS = 10 V 1.6 0.8 20 V 8 5A 3A 4 0 0 4 8 12 16 20 0 10–1 100 101 102 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00, Mar 14, 2006, page 3 of 6 RJK5003DPD Capacitance vs. Drain to Source Voltage (Typical) 103 Ciss Transfer Characteristics (Typical) 10 Tc = 25°C VDS = 10 V 8 Pulse Test Drain Current ID (A) Capacitance (pF) 102 6 4 Coss 101 Tch = 25°C f = 1 MHz VGS = 0 V 0 10 100 101 Crss 2 0 0 2 4 6 8 10 102 103 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Gate to Source Voltage vs. Gate Charge (Typical) Switching Characteristics (Typical) Tch = 25°C VDD = 200 V VGS = 10 V RG = 25 Ω Pulse Test Gate to Source Voltage VGS (V) 103 7 5 16 Tch = 25°C ID = 5 A 12 VDS = 100 V Switching Time (ns) 3 2 102 7 5 3 2 101 0 10 td(on) 200 V 8 400 V td(off) tf 4 tr 2 3 5 7 101 0 0 4 8 12 16 20 24 Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage Characteristics (Typical) 10 VGS = 0 V Pulse Test Ta = 25°C Gate Charge Qg (nC) Drain to Source Breakdown Voltage V(BR)DSS (t°C) Drain to Source Breakdown Voltage V(BR)DSS (25°C) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 VGS = 0 V ID = 1 mA 1.2 Source Current IDR (A) 8 6 1.0 4 0.8 2 0 0 0.4 0.8 1.2 1.6 2 0.6 0.4 –75 –25 25 75 125 175 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Rev.2.00, Mar 14, 2006, page 4 of 6 RJK5003DPD Static Drain to Source on State Resistance vs. Channel Temperature (Typical) 101 VGS = 10 V 7 ID = 2 A 5 Pulse Test 4 3 2 Drain to Source on State Resistance RDS(on) (25°C) Drain to Source on State Resistance RDS(on) (t°C) Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Channel Temperature (Typical) 5.0 VDS = 10 V ID = 1 mA 4.0 3.0 10 0 7 5 4 3 2 2.0 1.0 10–1 –75 –25 25 75 125 175 0 –75 –25 25 75 125 175 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Transient Thermal Impedance θth(ch-c) (°C/W) Transient Thermal Impedance vs. Pulse Width 101 7 5 3 2 D=1 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse PDM PW T D= PW T 100 7 5 3 2 10–1 10–4 2 3 5710–3 2 3 5 710–2 2 3 5 7 10–12 3 5 7100 2 3 5 7 101 Pulse Width PW (s) Switching Time Measurement Circuit Switching Waveform Vin Monitor RG D.U.T. RL Vout Monitor Vin Vout VDD 10% 10% 90% 10% 90% td(on) tr 90% td(off) tf Rev.2.00, Mar 14, 2006, page 5 of 6 RJK5003DPD Package Dimensions Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Previous Code  MASS[Typ.] 0.32g Unit: mm 1 ± 0.2 6.6 5.3 ± 0.2 2.3 0.5 ± 0.2 6.1 ± 0.2 10.4Max 0.1 ± 0.1 1Max 2.5Min 0.76 ± 0.2 0.76 0.5 ± 0.2 2.3 ± 0.2 2.3 Order Code Lead form Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name - 00 - direction (J or Q) - 2 Standard order code example RJK5003DPD-00-J2 Note: It is the case of a standard. In addition, please confirm the packing specification for every product about the contents of packing. Rev.2.00, Mar 14, 2006, page 6 of 6 1 1.4 ± 0.2 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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