RJK5014DPP-00-T2

RJK5014DPP Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.325 Ω typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 °C) • Low leakage current • High speed switching REJ03G1530-0200 Rev.2.00 Dec 02, 2009 Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 23 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 μs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum safe operation area Symbol VDSS VGSS IDNote4 ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 500 ±30 19 38 19 38 4 0.88 35 3.57 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1530-0200 Rev.2.00 Dec 02, 2009 Page 1 of 6 RJK5014DPP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 500 — — 3.0 — — — — — — — — — — — — — Typ — — — — 0.325 1800 190 24 36 41 93 39 46 9 20 0.91 320 Max — 1 ±0.1 4.5 0.390 — — — — — — — — — — 1.55 — Unit V μA μA V Ω pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 9.5 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 9.5 A VGS = 10 V RL = 26.3 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 19 A IF = 19 A, VGS = 0 Note5 IF = 19 A, VGS = 0 diF/dt = 100 A/μs REJ03G1530-0200 Rev.2.00 Dec 02, 2009 Page 2 of 6 RJK5014DPP Main Characteristics Maximum Safe Operation Area 100 10 Typical Output Characteristics 40 Ta = 25°C Pulse Test PW μs 10 V 6V 5.8 V Drain Current ID (A) 0 Drain Current ID (A) 10 = 10 μs 30 1 Operation in this area is limited by RDS(on) 20 5.6 V 5.4 V 0.1 10 0.01 Tc = 25°C 1 shot 1 10 100 1000 5.2 V VGS = 5 V 0.001 0.1 0 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) 10 VGS = 10 V Ta = 25°C Pulse Test Typical Transfer Characteristics 20 10 VDS = 10 V Pulse Test Drain Current ID (A) 5 2 1 0.5 0.2 0.1 0 2 4 6 8 10 Tc = −25°C 25°C 75°C 1 0.1 1 10 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature (Typical) VGS = 10 V ID = 8 A 0.8 Pulse Test Body-Drain Diode Reverse Recovery Time (Typical) 1000 0.6 Reverse Recovery Time trr (ns) 1 100 0.4 0.2 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 1 10 100 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Reverse Drain Current IDR (A) REJ03G1530-0200 Rev.2.00 Dec 02, 2009 Page 3 of 6 RJK5014DPP Typical Capacitance vs. Drain to Source Voltage (Typical) Drain to Source Voltage VDS (V) 10000 Ciss Dynamic Input Characteristics (Typical) ID = 19 A Ta = 25 °C VGS VDD = 400 V 250 V 100 V VDS 1000 600 12 100 Coss 400 8 10 VGS = 0 f = 1 MHz Ta = 25°C 50 100 150 Crss 200 VDD = 400 V 250 V 100 V 20 40 60 80 4 1 0 200 2 50 0 0 0 100 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) 40 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) Reverse Drain Current IDR (A) VGS = 0 V Ta = 25 °C Pulse Test 30 Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5 VDS = 10 V 4 3 20 ID = 10 mA 1 mA 0.1 mA 2 1 10 0 0 0.4 0.8 1.2 1.6 2.0 0 -25 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) REJ03G1530-0200 Rev.2.00 Dec 02, 2009 Page 4 of 6 Gate to Source Voltage VGS (V) 800 16 Capacitance C (pF) RJK5014DPP Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.57°C/W, Tc = 25°C 0.01 1 ot sh pu lse PDM PW T D= PW T 0.001 10 μ 100 μ 1m 10 m 100 m 1 10 100 Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V VDD = 250 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(on) tr 90% td(off) tf REJ03G1530-0200 Rev.2.00 Dec 02, 2009 Page 5 of 6 RJK5014DPP Package Dimensions Package Name TO-220FN JEITA Package Code ⎯ RENESAS Code PRSS0003AB-A Previous Code ⎯ MASS[Typ.] 2.0g Unit: mm 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 φ3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 Ordering Information Part No. RJK5014DPP-00-T2 Quantity 1050 pcs Box (Tube) Shipping Container REJ03G1530-0200 Rev.2.00 Dec 02, 2009 Page 6 of 6 2.6 ± 0.2 4.5 ± 0.2 6.5 ± 0.3 3 ± 0.3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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