RJK5030DPP-M0-T2

Preliminary Datasheet RJK5030DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D G 1. Gate 2. Drain 3. Source 1 23 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse) Note3 IAP Pch Note 2 ch-c Tch Tstg Note1 Value 500 30 5 20 5 28.5 4.38 150 –55 to +150 Unit V V A A A W C/W C C R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Page 1 of 6 RJK5030DPP-M0 Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V (BR) DSS IDSS IGSS VGS (off) RDS (on) Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Min 500 — — 3.5 — — — — — — — — — — — — — Typ — — — — 1.3 550 60 10 15 20 90 30 13 3.3 6.6 0.9 250 Max — 10 0.1 4.5 1.6 — — — — — — — — — — 1.5 — Unit V A A V  pF pF pF ns ns ns ns nC nC nC V ns Test Conditions ID = 1 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 2 A, VGS = 10 V Note 4 VDS = 25 V VGS = 0 f = 1 MHz VDD = 200 V ID = 2 A VGS = 10 V Rg = 25  VDD = 400 V VGS = 10 V ID = 5 A IF = 5 A, VGS = 0 Note 4 IF = 5 A, VGS = 0 VDD = 250 V diF/dt = 100 A/s Note: 4. Pulse test R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Page 2 of 6 RJK5030DPP-M0 Preliminary Main Characteristics Maximum Safe Operation Area 100 10 Typical Output Characteristics 10 Ta = 25°C Pulse Test 8V 10 V 15 V, 20 V 7V 6 ID (A) Drain Current ID (A) 10 μs 8 PW =1 00 Drain Current 1 Operation in this area is limited by RDS(on) Tc = 25°C 1 shot 1 10 μs 6.5 V 4 6V 2 0 0 4 8 12 16 20 5.5 V VGS = 5 V 0.1 0.01 0.1 100 1000 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) 10 10 Tc = −25°C ID (A) 8 6 25°C 75°C Drain Current 1 4 2 VGS = 10 V Ta = 25°C Pulse Test 0.1 1 3 10 0 0 2 4 6 8 10 12 14 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature (Typical) 5 VGS = 10 V Pulse Test 4 10000 Body-Drain Diode Reverse Recovery Time (Typical) Reverse Recovery Time trr (ns) 1000 3 ID = 5 A 2A 1A 2 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 0.1 1 10 100 1 0 −25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Reverse Drain Current IDR (A) R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Page 3 of 6 RJK5030DPP-M0 Typical Capacitance vs. Drain to Source Voltage VDS (V) 1000 Ciss Preliminary Dynamic Input Characteristics (Typical) ID = 5 A Ta = 25°C Capacitance C (pF) 600 VDS 12 VDD = 100 V 200 V 8 400 V Drain to Source Voltage Coss 10 Crss VGS = 0 f = 1 MHz Tc = 25°C 50 100 150 200 250 400 200 VDD = 400 V 200 V 100 V 4 8 12 16 4 1 0 0 0 20 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage (Typical) 20 5 Gate to Source Cutoff Voltage vs. Case Temperature (Typical) IDR (A) Gate to Source Cutoff Voltage VGS(off) (V) 16 VGS = 0 Ta = 25°C Pulse Test 4 Reverse Drain Current 12 3 ID = 10 mA 1 mA 0.1 mA 8 4 2 1 VDS = 10 V 0 -25 0 25 0 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Page 4 of 6 Gate to Source Voltage 100 VGS (V) 800 VGS 16 RJK5030DPP-M0 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C Preliminary 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.38°C/W, Tc = 25°C PDM PW T 1m 10 m 100 m 1 10 D= PW T 0.03 0.01 ulse tp ho 1s 0.01 10 μ 100 μ Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V VDD = 200 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(on) tr 90% td(off) tf R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Page 5 of 6 RJK5030DPP-M0 Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 3.0 ± 0.3 15.0 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 6.5 ± 0.3 2.6 ± 0.2 4.5 ± 0.2 Ordering Information Orderable Part Number RJK5030DPP-M0-T2 Quantity 1050 pcs Shipping Container Box (Tube) R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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